CN109949842A - A kind of racing track memory based on magnetic Skyrmion - Google Patents
A kind of racing track memory based on magnetic Skyrmion Download PDFInfo
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Abstract
The present invention provides a kind of racing track memory based on magnetic Skyrmion, including Magnetic nano-pipe track, and nanotube track is divided into information write-in part, information storage part, information reading section along its orbital direction；Binary number " 1 " and " 0 " are indicated using the presence or absence of magnetic Skyrmion, magnetic Skyrmion is written part in the information and generates, it then is moved into information storage part along nanotube track under the driving of electric current, the information reading section is entered after the information storage part and reads data；Racing track memory of the invention information storage density with higher and stability have very high read or write speed, when current density is 1013A/m2When, the Propagation movement velocity of Skyrmion on the nanotube can achieve 2000m/s, and the angular speed of the Skyrmion moved on the nanotube and the thickness of nanotube are related, this property is not available in plane nano band structure.
Description
Technical field
The invention belongs to magnetic storage fields, and in particular to a kind of racing track memory based on magnetic Skyrmion.
Background technique
With the development of the high and new technologies such as big data and artificial intelligence, the demand that people store information is growing day by day, anxious
Need that storage density is higher, the faster memory device of reading speed.Racing track memory is a kind of novel nonvolatile memory, is compared
In conventional hard, racing track memory has higher storage density.Parkin in 2008 et al. proposes the match based on neticdomain wall
Road memory (S.S.P.Parkin, et.al Magnetic Domain-Wall Racetrack Memory).This racing track is deposited
Reservoir carries out the coding of binary information with spinning magnetic domain directed downwardly upward by spinning, store data in one it is similar
In on the nanobelt of tape, magnetic domain is driven by applying spin polarized current to reading position is written accordingly to realize data
Write-in and reading.
Magnetic Skyrmion is that a kind of magnetic structure by topology protection is being matched since its size is small and higher stability
Storage application aspect in road has significant advantage.In the racing track memory based on magnetic Skyrmion, with the presence or absence of Skyrmion
The compiling of binary code is carried out, has Skyrmion to represent " 1 ", otherwise represents " 0 ".Compared to the racing track storage based on magnetic domain
Device, the racing track memory based on magnetic Skyrmion have the advantages that more.First in power consumption, drive needed for traditional neticdomain wall
Starting current is about 2.5 × 1011A/m2, and the starting current of Skyrmion is driven only to need 106A/m2, therefore it is based on this lattice of magnetic
The racing track memory power consumption of pine torch is lower.In addition, compared with neticdomain wall, magnetic Skyrmion it is smaller, generally received several
Rice is between tens nanometers, using magnetic Skyrmion as the racing track memory of information carrier with higher storage density.
Magnetic Skyrmion is moved when being driven by spin polarized current due to the effect of magnus force, Skyrmion
Direction can be deflected to the edge of nanobelt, and here it is so-called Skyrmion Hall effect.When Skyrmion moves to a nanometer rail
When the boundary in road, boundary can generate Skyrmion should active force.When current density is greater than certain value, boundary is to Si Geming
The active force of son is much smaller than magnus force, and Skyrmion will be buried in oblivion on the boundary of nanometer track at this time.It is being based on this lattice of magnetic
In the racing track memory of pine torch, the speed of reading data depends on the movement velocity of Skyrmion, and the validity of information depends on
Whether Skyrmion can be stable in nanometer moving on rails.Therefore, overcome the influence of Skyrmion effect and keep this
It is to need what is solved to ask based on magnetic Skyrmion racing track memory that lattice pine torch can keep steadily high-speed motion on nanometer track
Topic.
Summary of the invention
In view of the foregoing deficiencies of prior art, it is an object of the invention to propose a kind of match based on magnetic Skyrmion
Road memory replaces traditional plane nano track with nanotube track, it is intended to avoid Si Ge by eliminating boundary itself
Pine torch moves to boundary disappearance.Since tubular structure is the geometric curved surfaces of a closure, under the driving of electric current, Skyrmion exists
It can be moved along the track of spiral on nanotube.Use nano tube structure as the track of racing track memory, in high current,
Skyrmion can keep steadily high-speed motion in orbit, and which greatly improves the racing track storages based on magnetic Skyrmion
The stability of device.
For achieving the above object, technical solution of the present invention is as follows:
A kind of racing track memory based on magnetic Skyrmion, including Magnetic nano-pipe track, the nanotube track is along it
Orbital direction is divided into information write-in part, information storage part, information reading section；
Binary number " 1 " and " 0 " are indicated using the presence or absence of magnetic Skyrmion, have magnetic Skyrmion to represent " 1 ", on the contrary generation
Table " 0 ", the magnetic Skyrmion is written part in the information and generates, then along nanotube track under the driving of electric current
It is moved into information storage part, the information reading section is entered after the information storage part and reads data.
Magnetic tunnel junction injection the it is preferred that within single write cycle, in the information write-in part
One electric current, the first sense of current is inside perpendicular to magnetic Nano pipe surface, and the first electric current first passes around fixing layer and is polarized into
Spin polarized current, spin direction is identical as the spin direction of fixing layer magnetic moment, when the first circuit current flows to nanotube rail
When road, magnetic Skyrmion is generated in the position of the information write-in part of nanotube, and then indicate binary number " 1 ", otherwise indicated
Binary number " 0 ", first electric current need to determine whether apply within each write cycle according to the logic of write-in
Electric current.
It is preferred that described information write-in part be the outer surface of nanotube one end be socketed one it is semiorbicular
Magnetic tunnel-junction MTJ.
It is preferred that enter single transmission cycle after single write cycle, in single transmission cycle,
The second electric current along nanotube orbital direction, driving of the magnetic Skyrmion in the second electric current are injected in the nanotube track
Under moved along nanotube track, it is described to carry out the storage of individual bit information into the information storage part
Second electric current is periodic spin polarization pulse current, and the period is that Skyrmion is moved to from the position of a storage unit
The time of next storage unit position, the time applied is after each write cycle.
It is preferred that magnetic Skyrmion under the driving of the second electric current, is transported along the track of spiral on the nanotube
It is dynamic, it is angular on speed increase as the thickness of nanotube increases.
It is preferred that information storage part is divided into multiple storage units, each storage unit along nanotube track
The information of a bit is stored, is corresponded in the presence or absence of each storage unit position magnetic Skyrmion state.
It is preferred that in single read cycle, the information reading section magnetic tunnel junction perpendicular to
Third electric current is inwardly injected in the direction of nanotube surface, and the variation of the tunnel magnetoresistive of part is read by detection information, and then sentences
Whether disconnected have Skyrmion process, when the nanotube track for having Skyrmion to pass through information reading section, is high-impedance state, otherwise is
Low resistance state.
It is preferred that the information reading section is in one end socket one of the nanotube far from information write-in part
The magnetic tunnel-junction of a annular shape has detected whether that Skyrmion passes through by detecting the variation of magnetic resistance.
It is preferred that material used in the Magnetic nano-pipe is the magnetic block to interact with block DM
Material, and anisotropic direction is outside perpendicular to nanotube surface.
It is preferred that material used in Magnetic nano-pipe is the B20 block with atomic structure inverting symmetry breaking
Material is selected from MnSi, FeGe, FeCoSi, Cu2OSeO3, MnGe, the Skyrmion of formation is the Skyrmion of Bloch type, magnetic
Property nanotube have along radial anisotropic orientation.
The invention has the benefit that
(1) track of traditional racing track memory based on magnetic Skyrmion is plane nano band structure, is driven with electric current
When dynamic Skyrmion, since there are Skyrmion Hall effect, Skyrmion can deviate a nanometer belt track movement, received touching
When the boundary of rice band, Skyrmion can be buried in oblivion on boundary, and information is caused to lose or misread.Present invention nano tube structure substitutes flat
Face nanometer band structure, since nano tube structure is the curved surface of a closure, even if applying very big electric current, Skyrmion still can be with
Steadily transmit on the nanotube.
(2) proposed by the present invention to be based on magnetic Skyrmion compared to the past racing track memory based on neticdomain wall type
The information storage density with higher of racing track memory on the nanotube and stability.
(3) racing track memory of the invention has very high read or write speed, when current density is 1013A/m2When, Si Geming
The Propagation movement velocity of son on the nanotube can achieve 2000m/s.
(4) angular speed of the Skyrmion proposed by the present invention moved on the nanotube is related with the thickness of nanotube, example
Such as, in fixed nanotube outer radius, when reducing nanotube inside radius, the angular speed of Skyrmion increases, this property is flat
Not available in the nanometer band structure of face.
Detailed description of the invention
Fig. 1 is the nanotube racing track memory based on magnetic Skyrmion in example, has Skyrmion to represent binary number
" 1 ", on the contrary represent " 0 ".
2 are written part for information, and 3 be information storage part, and 4 be information reading section, and 5 be semiorbicular magnetic tunnel-junction, and 6
It is Magnetic nano-pipe track for circular magnetic tunnel-junction, 7.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
A kind of racing track memory based on magnetic Skyrmion, including Magnetic nano-pipe track, the nanotube track is along it
Orbital direction is divided into information write-in part, information storage part, information reading section；
Binary number " 1 " and " 0 " are indicated using the presence or absence of magnetic Skyrmion, have magnetic Skyrmion to represent " 1 ", on the contrary generation
Table " 0 ", the magnetic Skyrmion is written part in the information and generates, then along nanotube track under the driving of electric current
It is moved into information storage part, the information reading section is entered after the information storage part and reads data.
The information write-in part is to be socketed a semiorbicular magnetic tunnel-junction MTJ in the outer surface of nanotube one end.
Within single write cycle, the magnetic tunnel junction in the information write-in part injects the first electric current, the first electricity
The direction of stream is inside perpendicular to magnetic Nano pipe surface, and the first electric current first passes around fixing layer and is polarized into spin polarized current,
Its spin direction is identical as the spin direction of fixing layer magnetic moment, when the first circuit current flows to nanotube track, in nanotube
Information write-in part position generate magnetic Skyrmion, and then indicate binary number " 1 ", otherwise indicate binary number " 0 ", institute
The first electric current stated needs determine whether apply electric current within each write cycle according to the logic of write-in.
Enter single transmission cycle after single write cycle, in single transmission cycle, in the nanotube
The second electric current along nanotube orbital direction is injected in track, magnetic Skyrmion is under the driving of the second electric current along nanotube
Track movement, into the information storage part, to carry out the storage of individual bit information, second electric current is week
The spin polarization pulse current of phase property, period move to next storage list from the position of a storage unit for Skyrmion
The time of first position, the time applied is after each write cycle.
Magnetic Skyrmion is moved along the track of spiral on the nanotube under the driving of the second electric current, it is angular on
Speed increases as the thickness of nanotube increases (such as fixed nanotube outer radius, reduce nanotube inside radius).
Information storage part is divided into multiple storage units along nanotube track, and each storage unit stores a bit
Information corresponds in the presence or absence of each storage unit position magnetic Skyrmion state.
The information reading section is to be socketed a circular magnetic far from one end of information write-in part in nanotube
Tunnel knot, in single read cycle, the information reading section magnetic tunnel junction perpendicular to nanotube surface side
To inside injection third electric current, the variation of the tunnel magnetoresistive (TMR) of part is read by detection information, and then judge whether there is this
Lattice pine torch pass through, have Skyrmion pass through information reading section nanotube track when, tunnel magnetoresistive side is big, be high-impedance state, instead
Be low resistance state.
Material used in the Magnetic nano-pipe is the (Dzyaloshinkii-Moriya that interacts with block DM
Interaction magnetic block materials), and anisotropic direction is outside perpendicular to nanotube surface.
Material used in Magnetic nano-pipe is the B20 block materials with atomic structure inverting symmetry breaking, is selected from MnSi,
FeGe, FeCoSi, Cu2OSeO3, MnGe, such material is with block DM interaction (Dzyaloshinkii-
Moriya interaction), the Skyrmion of formation is the Skyrmion (Bloch skyrmion) of Bloch type.Magnetism is received
Mitron has along radial anisotropic orientation.
In the present embodiment, the outer radius of Magnetic nano-pipe is 50nm, and inside radius 30nm, the length of nanotube is 400nm,
For each storage unit at a distance of 50nm, the magnetic material used is FeGe, anisotropic direction perpendicular to nanotube surface to
Outside.
As shown in Figure 1, being passed through the first electric current j in writing headw, current direction is inside perpendicular to nanotube surface, is used for
Magnetic Skyrmion is formed on nanotube, is defined the binary number " 1 " indicated at this time, otherwise is indicated binary number " 0 ".Form this lattice
After pine torch, in the second electric current jdDriving under, Skyrmion can be moved along nanotube track, from writing head to information storage part
Point.Finally, by being passed through third electric current j in read headr, current direction is inside perpendicular to nanotube surface, when there is Skyrmion
When by read head, the tunnel magnetoresistive of read head becomes larger, to read binary number " 1 ", otherwise is " 0 ".
It looks familiar in detail the course of work of the invention so that storing data is " 01101 " as an example below.
First write cycle T1It is interior, in the first electric current j that writing head is injected perpendicular to nanotube surfacewIt is 0, in nanotube
Information write-in part do not have magnetic Skyrmion generation, and then expression binary number " 0 ".
After first write cycle, the first electric current j is closedw, into first transmission cycle T2.It is transmitted at first
In the time in period, it is passed through the second electric current j on the nanotubed, direction along nanotube axial direction.First transmission cycle knot
Shu Hou, the second electric current jdIt closes.It is in the information of the storage of first storage unit of the information storage part of nanotube at this time
"0".Single write cycle and transmission cycle constitute the storage cycle T of the individual bit of a completion.
Into second write cycle, within write cycle, in the first electric current that writing head is injected perpendicular to nanotube surface
jw, Skyrmion is generated in the write-in part of nanotube, and then indicate binary number " 1 ".
After second write cycle, the first electric current j is closedw, into second transmission cycle.Second transmission week
In the time of phase, it is passed through the second electric current j on the nanotubed, driving Skyrmion moves to first of information storage part and deposits
Storage unit.At this point, first storage unit in the information storage part of nanotube is " 1 ", second storage unit is " 0 ".
Second storage end cycle.
The period is stored into third.Within write cycle, in the first electric current that writing head is injected perpendicular to nanotube surface
jw, Skyrmion is generated in the write-in part of nanotube.In transmission cycle, it is passed through the second electric current j on the nanotubed, drive this
Lattice pine torch moves to first storage unit of information storage part, originally moves in the Skyrmion of the first storage unit
Two storage units.At this point, first storage unit in the information storage part of nanotube is " 1 ", second storage unit
For " 1 ", third storage unit is " 0 ".Third stores end cycle.
And so on, after 5 storage end cycles, to first storage unit knot since the 5th storage unit
Beam, the presence or absence of Skyrmion state are followed successively by, "None", " having ", " having ", "None", " having ", that is, the data stored are " 01101 ".
When needing to read data, it is introduced into first transmission cycle.In first transmission cycle, it is passed through the second electric current
jd, will move right one in the information of nanotube information memory cell, be originally moved to reading in the information of the 5th storage unit
Head.After first transmission cycle, the second electric current jdIt closes, into first read cycle, in first read cycle
Time in, information reading section read head inject third electric current jr, current direction is inside perpendicular to nanotube surface.This
When the tunnel magnetoresistive that reads be low resistance state, and then read binary number " 0 ".
After first read cycle, into second transmission cycle.In second transmission cycle, it is passed through second
Electric current jd, it originally was driven to read head region in the Skyrmion of the 5th storage unit, at this time in information storage part from
Three storage units are followed successively by the presence or absence of the Skyrmion of the 5th storage unit state, " having ", "None", " having ".Second
After transmission cycle, the second electric current jdIt closes, into second read cycle.In second read cycle, read in information
The read head of part is taken to inject third electric current jr, at this time because having magnetic Skyrmion in the position of read head, magnetic channel resistance is high resistant
State, and then read binary number " 1 ".
And so on, in all storage information that nanotube information storage part after 5 read cycles, can be read.
In some embodiments, when the density of electric current is 1013A/m2When, the movement velocity of magnetic Skyrmion is about 2000m/s,
Pulse current jdCycle T2=50nm/ (2000m/s)=0.025ns.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of racing track memory based on magnetic Skyrmion, it is characterised in that: including Magnetic nano-pipe track, the nanotube
Track is divided into information write-in part, information storage part, information reading section along its orbital direction；
Binary number " 1 " and " 0 " are indicated using the presence or absence of magnetic Skyrmion, has magnetic Skyrmion to represent " 1 ", otherwise are represented
" 0 ", the magnetic Skyrmion are written part in the information and generate, then transport under the driving of electric current along nanotube track
It is dynamic to enter information storage part, enter the information reading section after the information storage part and reads data.
2. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: in single write cycle
Interior, the magnetic tunnel junction in the information write-in part injects the first electric current, and the first sense of current is perpendicular to magnetic Nano
Pipe surface is inside, and the first electric current first passes around fixing layer and is polarized into spin polarized current, spin direction and fixing layer magnetic moment
Spin direction it is identical, when the first circuit current flows to nanotube track, nanotube information write-in part position produce
Magnetisation Skyrmion, and then indicate binary number " 1 ", on the contrary indicating binary number " 0 ", first electric current is according to write-in
Logic needs to determine whether apply electric current within each write cycle.
3. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: the information write-in
Part is to be socketed a semiorbicular magnetic tunnel-junction MTJ in the outer surface of nanotube one end.
4. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: in single write cycle
After enter single transmission cycle, in single transmission cycle, in the nanotube track injection along nanotube rail
Second electric current in road direction, magnetic Skyrmion move under the driving of the second electric current along nanotube track, into the letter
Storage section is ceased, to carry out the storage of individual bit information, second electric current is periodic spin polarization pulse electricity
Stream, period are the time that Skyrmion moves to next storage unit position from the position of a storage unit, are applied
Time after each write cycle.
5. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: magnetic Skyrmion is
Under the driving of two electric currents, moved on the nanotube along the track of spiral, it is angular on speed with nanotube thickness increase
Add and increases.
6. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: information storage part edge
Nanotube track be divided into multiple storage units, each storage unit stores the information of a bit, corresponds in each storage
The presence or absence of cell position magnetic Skyrmion state.
7. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: in single read cycle
It is interior, third electric current is inwardly injected perpendicular to the direction of nanotube surface in the magnetic tunnel junction of the information reading section, is led to
The variation that detection information reads the tunnel magnetoresistive of part is crossed, and then judges whether there is Skyrmion process, there is Skyrmion process
It is high-impedance state when the nanotube track of information reading section, otherwise is low resistance state.
8. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: the information is read
Part is to be socketed a circular magnetic tunnel-junction far from one end of information write-in part in nanotube, by the change for detecting magnetic resistance
Change to have detected whether that Skyrmion passes through.
9. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: the magnetic Nano
Pipe material used is the magnetic block materials to interact with block DM, and anisotropic direction is perpendicular to nanotube
Surface is outside.
10. the racing track memory according to claim 1 based on magnetic Skyrmion, it is characterised in that: Magnetic nano-pipe institute
Material is the B20 block materials with atomic structure inverting symmetry breaking, is selected from MnSi, FeGe, FeCoSi, Cu2OSeO3,
MnGe, the Skyrmion of formation are the Skyrmion of Bloch type, and Magnetic nano-pipe has along radial anisotropic orientation.
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| CN111951846A (en) * | 2020-08-14 | 2020-11-17 | 长江存储科技有限责任公司 | Track memory, reading and writing method thereof and track memory device |
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| WO2024011407A1 (en) * | 2022-07-12 | 2024-01-18 | 中国科学院微电子研究所 | Memory cell and preparation method therefor, memory, and information storage method |
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Inventor after: Yan Peng Inventor after: Cao Yunpan Inventor after: Wang Xiaofan Inventor after: Wang Xiansi Inventor after: Wang Chen Inventor after: Yang Huanhuan Inventor before: Yan Peng Inventor before: Cao Yunshan Inventor before: Wang Xiaofan Inventor before: Wang Xiansi Inventor before: Wang Chen Inventor before: Yang Huanhuan |
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