CN109943235B - Water-based composite polishing solution for ceramic polishing and preparation method thereof - Google Patents
Water-based composite polishing solution for ceramic polishing and preparation method thereof Download PDFInfo
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Abstract
The invention provides a water-based composite polishing solution for ceramic polishing and a preparation method thereof, wherein the polishing solution comprises the following components in percentage by mass: 6-21% of alumina with the particle size of 80-350 nm, 6-18% of fumed silica with the particle size of 50-300 nm, 0.9-4.5% of dispersing agent, 0.04-1.8% of film forming agent, 0.08-0.4% of corrosion inhibitor, 1.4-3% of pH value regulator and the balance of water; the dispersing agent is selected from one or more of zinc phosphate, sucrose monostearate, polyvinylpyrrolidone, isothiazolinone, nonylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether. The polishing solution provided by the invention has higher apparent yield and polishing rate for polishing the ceramic wafer under the synergistic effect of the components with the contents. In addition, the polishing solution has strong stability and good suspension property.
Description
Technical Field
The invention relates to the technical field of polishing solution, in particular to water-based composite polishing solution for ceramic polishing and a preparation method thereof.
Background
The ceramic has the advantages of high melting point and boiling point, high hardness, insulator at normal temperature, high toughness, high bending strength, high wear resistance, excellent heat insulation performance, thermal expansion coefficient close to rigidity and the like, and the panel (back cover) of electronic products such as mobile phones and the like processed by adopting glass, metal and injection molding processes has poor color tone and touch feeling, is not scratch-resistant, is easy to scratch and is fragile. Therefore, the ceramic has wide application prospect in the fields of photoelectron, communication, national defense and the like.
However, since the ceramic deforms during sintering, the blank obtained after sintering has poor surface quality and cannot meet the requirement of touch. And the panel with larger size, thin wall and high surface requirement is more and more required, and the ceramic has high processing hardness and high processing difficulty. The CMP (Chemical Mechanical Polishing) technology combines the advantages of Chemical and Mechanical Polishing, is the only global planarization technology in the best liquid at present, and the traditional abrasive used in CMP is Al2O3、SiO2、CeO2And the like. However, research and practice show that the single inorganic abrasive particle cannot achieve satisfactory polishing performance, and the single aluminum oxide polishing solution directly impacts a processed surface and causes hard impact on the processed surface to generate larger micro defects such as scratches, pits and the like; the single silicon oxide polishing solution has the problems of long polishing time, low polishing efficiency and the like.
In order to greatly improve the polishing efficiency without reducing the apparent mass of a workpiece processed by the silica sol polishing solution, the development of a water-based composite polishing solution for polishing ceramics is urgently needed.
Disclosure of Invention
In view of the above, the present invention provides a water-based composite polishing solution for polishing ceramic wafers, which has high apparent yield and high polishing rate, and a preparation method thereof.
The invention provides a water-based composite polishing solution for polishing ceramics, which comprises the following components in parts by mass:
6-21% of alumina with the particle size of 80-350 nm, 6-18% of fumed silica with the particle size of 50-300 nm, 0.9-4.5% of dispersing agent, 0.04-1.8% of film forming agent, 0.08-0.4% of corrosion inhibitor, 1.4-3% of pH value regulator and the balance of water;
the dispersing agent is selected from one or more of zinc phosphate, sucrose monostearate, polyvinylpyrrolidone, isothiazolinone, nonylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether.
Preferably, the film forming agent is one or more selected from 5-methyl tetrazole, 1-phenyl-5-sulfenyl benzimidazole, 4-hydroxy benzotriazole butyl ester and 4-carboxyl benzotriazole methyl ester.
Preferably, the corrosion inhibitor is selected from one or more of benzotriazole, benzimidazole, methacrylamide, diethylenetriamine, sodium oxalate and sodium borate.
Preferably, the pH value regulator is a composite alkali of organic alkali and inorganic alkali;
the organic alkali is selected from one or more of hexahydroxyethyl ethylenediamine, butyl sultone, hydroxyethyl ethylenediamine, diethanolamine, triethanolamine and tetramethylammonium hydroxide; the inorganic base is selected from one or more of ammonia water, sodium hydroxide and potassium hydroxide.
Preferably, the pH value of the water-based composite polishing solution for polishing the ceramic is 8-12.
The invention provides a preparation method of the water-based composite polishing solution for ceramic polishing, which comprises the following steps:
mixing water and a dispersant to obtain a first mixture;
mixing alumina with the particle size of 80-350 nm, fumed silica with the particle size of 50-300 nm and the first mixture to obtain a second mixture;
mixing the film forming agent, the corrosion inhibitor and the second mixture to obtain a third mixture;
and mixing the third mixture with a pH value regulator, and performing ultrasonic dispersion to obtain the water-based composite polishing solution for ceramic polishing.
Preferably, the dispersing agent, the film forming agent and the corrosion inhibitor are added at the rate of 0.7-1.5L/min.
The invention provides a water-based composite polishing solution for polishing ceramics, which comprises the following components in parts by mass: 6-21% of alumina with the particle size of 80-350 nm, 6-18% of fumed silica with the particle size of 50-300 nm, 0.9-4.5% of dispersing agent, 0.04-1.8% of film forming agent, 0.08-0.4% of corrosion inhibitor, 1.4-3% of pH value regulator and the balance of water; the dispersing agent is selected from one or more of zinc phosphate, sucrose monostearate, polyvinylpyrrolidone, isothiazolinone, nonylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether. The polishing solution provided by the invention has higher apparent yield and polishing rate for polishing the ceramic wafer under the synergistic effect of the components with the contents. In addition, the polishing solution has strong stability and good suspension property. The experimental results show that: standing the polishing solution for 72 hours until the layering height still reaches 22/25-24/25; compared with the silica sol polishing solution in the prior art, when the polishing solution provided by the invention is used for polishing a ceramic wafer, the average polishing rate of a product is increased from 9-11 mu m/h to 22-31 mu m/h; the surface roughness Ra is reduced from 2.65nm to Ra less than 0.3 nm; the yield of the product is improved from 28.4 percent to more than 90 percent, and the surface roughness is reduced from 3.883nm to Ra of less than 0.3 nm.
The polishing solution has the advantages of simple preparation method, low cost, environmental protection and contribution to industrial popularization and application.
Detailed Description
The invention provides a water-based composite polishing solution for polishing ceramics, which comprises the following components in parts by mass:
6-21% of alumina with the particle size of 80-350 nm, 6-18% of fumed silica with the particle size of 50-300 nm, 0.9-4.5% of dispersing agent, 0.04-1.8% of film forming agent, 0.08-0.4% of corrosion inhibitor, 1.4-3% of pH value regulator and the balance of water;
the dispersing agent is selected from one or more of zinc phosphate, sucrose monostearate, polyvinylpyrrolidone, isothiazolinone, nonylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether.
The polishing solution provided by the invention has higher apparent yield and polishing rate for polishing the ceramic wafer under the synergistic effect of the components with the contents. In addition, the polishing solution has strong stability and good suspension property.
In the invention, the water-based composite polishing solution for polishing the ceramic comprises 6-21% of alumina with the particle size of 80-350 nm. In a specific embodiment of the invention, the alumina with the particle size of 80-350 nm is specifically one or more of alumina with the particle size of 100nm, alumina with the particle size of 200nm and alumina with the particle size of 300 nm.
In the invention, the water-based composite polishing solution for polishing the ceramic comprises 6-18%, preferably 9-15% of fumed silica with the particle size of 50-300 nm. In a specific embodiment of the invention, the fumed silica with a particle size of 50-300 nm is one or more of fumed silica with a particle size of 100nm, fumed silica with a particle size of 200nm and fumed silica with a particle size of 300 nm.
In the invention, the water-based composite polishing solution for polishing the ceramic comprises 0.9-4.5% of a dispersing agent, preferably 1-3%, and more preferably 1.3-1.9%. The dispersing agent is selected from one or more of zinc phosphate, sucrose monostearate, polyvinylpyrrolidone, isothiazolinone, nonylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether; preferably one or more selected from sucrose monostearate, polyvinylpyrrolidone and alkylphenol ethoxylates.
In the invention, the water-based composite polishing solution for polishing the ceramic comprises 0.04-1.8% of film-forming agent, preferably 0.1-1.5%, and more preferably 0.5-1.0%. In the invention, the film forming agent is preferably selected from one or more of 5-methyl tetrazole, 1-phenyl-5-sulfenyl benzimidazole, 4-hydroxy benzotriazole butyl ester and 4-carboxyl benzotriazole methyl ester, and more preferably selected from one or more of 5-methyl tetrazole, 4-hydroxy benzotriazole butyl ester and 4-carboxyl benzotriazole methyl ester.
In the invention, the water-based composite polishing solution for polishing the ceramic comprises 0.08-0.4% of corrosion inhibitor, preferably 0.1-0.4%. The corrosion inhibitor is preferably selected from one or more of benzotriazole, benzimidazole, methacrylamide, diethylenetriamine, sodium oxalate and sodium borate, and is more preferably selected from benzimidazole and/or methacrylamide.
In the invention, the water-based composite polishing solution for polishing the ceramic comprises 1.4-3% of pH value regulator, preferably 1.4-2.5%, and more preferably 1.5-1.9%. The pH value regulator is preferably a composite alkali of organic alkali and inorganic alkali; the organic base is preferably selected from one or more of hexahydroxyethyl ethylenediamine, butyl sultone, hydroxyethyl ethylenediamine, diethanolamine, triethanolamine and tetramethylammonium hydroxide, more preferably selected from diethanolamine and/or tetramethylammonium hydroxide; the inorganic base is selected from one or more of ammonia water, sodium hydroxide and potassium hydroxide. In a specific embodiment of the present invention, the pH adjuster is a composite alkali of diethanolamine and sodium hydroxide, a composite alkali of tetramethylammonium hydroxide and potassium hydroxide, or a composite alkali of triethanolamine and sodium hydroxide. The pH value of the water-based composite polishing solution for ceramic polishing provided by the invention is preferably adjusted to 8-12, and more preferably 9-11. In the invention, the composite alkali is used as a pH regulator and can also be used as a buffering agent to keep the polishing solution at a stable pH value; sodium hydroxide or potassium hydroxide is used as strong base and can react with an abrasive or a processing workpiece, organic base can simultaneously perform complexing and chelating actions, a stable film is formed on the surface of silica sol, the silica sol can not be dissolved in a high pH value state and can be prevented from crystallizing at high temperature, inorganic base can enhance the electrostatic action among particles, and then the removal of reaction products can be accelerated, and the polishing efficiency is improved.
In the present invention, the water-based composite polishing solution for ceramic polishing includes a balance of water. The water is preferably selected from deionized water.
In the specific embodiment of the invention, the water-based composite polishing solution for polishing the ceramic specifically comprises the following components:
18 percent of alumina with the grain diameter of 100nm, 9 percent of fumed silica with the grain diameter of 100nm, 1.3 percent of dispersant, 0.6 percent of film-forming agent, 0.1 percent of corrosion inhibitor, 1.6 percent of pH value regulator and the balance of water;
or 21 percent of alumina with the grain diameter of 100nm, 12 percent of fumed silica with the grain diameter of 100nm, 1.6 percent of dispersant, 0.5 percent of film-forming agent, 0.08 percent of corrosion inhibitor, 1.5 percent of pH value regulator and the balance of water;
or 16 percent of alumina with the grain diameter of 100nm, 15 percent of fumed silica with the grain diameter of 100nm, 1.9 percent of dispersant, 1.0 percent of film-forming agent, 0.4 percent of corrosion inhibitor, 1.9 percent of pH value regulator and the balance of water.
The invention provides a preparation method of the water-based composite polishing solution for ceramic polishing, which comprises the following steps:
mixing water and a dispersant to obtain a first mixture;
mixing alumina with the particle size of 80-350 nm, fumed silica with the particle size of 50-300 nm and the first mixture to obtain a second mixture;
mixing the film forming agent, the corrosion inhibitor and the second mixture to obtain a third mixture;
and mixing the third mixture with a pH value regulator, and performing ultrasonic dispersion to obtain the water-based composite polishing solution for ceramic polishing.
The preparation method is simple, low in cost, green and environment-friendly, and is beneficial to industrial popularization and application.
The present invention mixes water and a dispersant to obtain a first mixture. The invention preferably adds dispersing agent to water; more preferably, the dispersant is added under water stirring; the stirring speed is preferably 600-800 rpm. The invention preferably adds the dispersing agent at the flow rate of 0.7-1.5L/min and stirs the mixture until the mixture is uniformly mixed.
The method comprises the step of uniformly mixing alumina with the particle size of 80-350 nm, fumed silica with the particle size of 50-300 nm and a first mixture to obtain a second mixture. The film forming agent and the corrosion inhibitor are preferably added into the second mixture in sequence at a flow rate of 0.7-1.5L/min.
According to the invention, the pH value regulator is preferably added into the third mixture at a flow rate of 0.7-1.5L/min; uniformly mixing the third mixture and a pH value regulator, preferably adjusting the pH value to 8-12, uniformly stirring, and performing ultrasonic dispersion; the time of ultrasonic dispersion is preferably 0.5-1 h.
The invention provides a water-based composite polishing solution for polishing ceramics, which comprises the following components in parts by mass: 6-21% of alumina with the particle size of 80-350 nm, 6-18% of fumed silica with the particle size of 50-300 nm, 0.9-4.5% of dispersing agent, 0.04-1.8% of film forming agent, 0.08-0.4% of corrosion inhibitor, 1.4-3% of pH value regulator and the balance of water; the dispersing agent is selected from one or more of zinc phosphate, sucrose monostearate, polyvinylpyrrolidone, isothiazolinone, nonylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether. The polishing solution provided by the invention has higher apparent yield and polishing rate for polishing the ceramic wafer under the synergistic effect of the components with the contents. In addition, the polishing solution has strong stability and good suspension property. The experimental results show that: standing the polishing solution for 72 hours until the layering height still reaches 22/25-24/25; compared with the silica sol polishing solution in the prior art, when the polishing solution provided by the invention is used for polishing a ceramic wafer, the average polishing rate of a product is increased from 9-11 mu m/h to 22-31 mu m/h; the surface roughness Ra is reduced from 2.65nm to Ra less than 0.3 nm; the yield of the product is improved from 28.4 percent to more than 90 percent, and the surface roughness is reduced from 3.883nm to Ra of less than 0.3 nm.
In order to further illustrate the present invention, the following examples are provided to describe the water-based composite polishing solution for polishing ceramic and the preparation method thereof in detail, but they should not be construed as limiting the scope of the present invention.
Example 1
The materials were added in the amounts shown in table 1:
A. stirring deionized water at 600-800 rpm, adding dispersant polyvinylpyrrolidone at a flow rate of 0.7-1.5L/min, and stirring until the mixture is uniformly mixed;
B. slowly adding alumina powder into the solution, and stirring until the mixture is uniformly mixed;
C. continuously adding the film-forming agent 4-hydroxybenzotriazole butyl ester and the corrosion inhibitor isopropylacrylamide in sequence at the flow rate of 0.7-1.5L/min, and stirring until the mixture is uniformly mixed;
D. continuously adding a pH value regulator diethanolamine and sodium hydroxide composite alkali at the flow rate of 0.7-1.5L/min, regulating the pH value to 8-12, and stirring until the mixture is uniformly mixed;
E. and finally, performing ultrasonic dispersion for 0.5-1 h to obtain the water-based composite polishing solution for ceramic polishing.
TABLE 1 raw material usage amounts of examples 1 to 3 and comparative examples 1 to 6
The prepared polishing solution is subjected to suspension property test:
a certain amount of the prepared polishing solution sample is put into a standard 25mL tube, and the polishing solution sample is respectively kept stand for 12h, 24h, 48h and 72h to observe the layering condition of powder and liquid, which is shown in the following table 2:
TABLE 2 results of suspension test of polishing solutions of examples 1 to 3 of the present invention and comparative examples 1 to 6
The polishing effect of the polishing solution prepared in example 1 was tested on a polished ceramic wafer under the following conditions:
processing a machine table: a single-side four-head polishing machine; processing a product: a cambered surface ceramic wafer; base material: spherical resin; processing pressure: 0.15-0.2 MPa; rotating speed of a lower disc: 30rpm, polishing time: and (5) 60 min.
After polishing, carrying out ultrasonic cleaning and drying on the polished ceramic wafer, and detecting the apparent state of the polished ceramic wafer; measuring the thickness difference of the ceramic wafer by using a thickness gauge to calculate the polishing rate, measuring all polished wafers, and averaging to obtain the polishing rate; all polished wafers were measured with a roughness tester and averaged to obtain the wafer surface roughness. The experimental data obtained for the examples and comparative examples are shown in table 3:
TABLE 3 results of polishing tests on polishing solutions prepared in examples 1 to 3 and comparative examples 1 to 6
| Average apparent yield | Average polishing Rate (. mu.m/h) | Surface roughness Ra (nm) | |
| Example 1 | 90.3％ | 23.4 | 0.216 |
| Example 2 | 94.3％ | 25.8 | 0.231 |
| Example 3 | 93.0％ | 27.3 | 0.253 |
| Comparative example 1 | 75.0％ | 10.3 | 0.238 |
| Comparative example 2 | 56.7％ | 24.2 | 2.625 |
| Comparative example 3 | 28.4％ | 23.7 | 3.883 |
| Comparative example 4 | 73.9％ | 23.3 | 0.528 |
| Comparative example 5 | 73％ | 18.3 | 0.425 |
| Comparative example 6 | 68％ | 28.5 | 2.85 |
As can be seen from the comparison of the experimental results in Table 3, 1. compared with the comparative example, when the aluminum oxide/silicon oxide polishing solution prepared by the method is used for polishing a ceramic wafer, the average apparent yield of the product is more than 90%, the average polishing rate is controlled to be 22-31 μm/h, and the surface roughness Ra is less than 0.3nm, so that the requirements of the ceramic stone polishing process on the polishing rate and the apparent quality are completely met, and the polishing quality is improved; 2. compared with the existing silicon dioxide sol polishing solution, when the aluminum oxide/silicon oxide polishing solution prepared by the method is used for polishing a ceramic wafer, the average polishing rate of a product is increased from 9-11 mu m/h to 22-31 mu m/h, and the polishing rate in a process is greatly increased. 3. Compared with the existing alumina sol polishing solution, when the polishing solution prepared by the method is used for polishing the ceramic wafer, the surface roughness is reduced from 2.65nm to Ra less than 0.3nm, the apparent roughness of the product is greatly improved, and the apparent quality in the process of the ceramic polishing process is greatly improved. 4. When the dispersing agent is added into the polishing solution, the yield of the product is improved to be more than 90% from 28.4%, and the surface roughness is reduced from 3.883nm to Ra of less than 0.3 nm.
Example 2
The preparation process was the same as in example 1.
The raw materials are added according to the dosage shown in table 1, wherein the dispersant is sucrose monostearate, the film forming agent is 5-methyltetrazole, the corrosion inhibitor is benzimidazole, and the pH value regulator is composite alkali of tetramethylammonium hydroxide and potassium hydroxide.
The polishing solution prepared in example 2 was tested for suspension stability according to the present invention, and the results are shown in table 2.
The polishing solutions prepared in example 2 were subjected to polishing tests in accordance with the present invention, and the results are shown in Table 3.
Example 3
The preparation process was the same as in example 1.
The raw materials are added according to the dosage shown in the table 1, wherein the dispersant is alkylphenol ethoxylates, the film forming agent is 4-carboxyl benzotriazole methyl ester, the corrosion inhibitor is isopropylacrylamide, and the pH value regulator is composite alkali of diethanolamine and ammonia water.
The polishing solutions prepared in example 3 were tested for suspension stability according to the present invention, and the results are shown in Table 2.
The polishing solutions prepared in example 3 were subjected to polishing tests in accordance with the present invention, and the results are shown in Table 3.
Comparative example 1
The preparation process was the same as in example 1.
The raw materials are added according to the dosage shown in the table 1, wherein the dispersant is alkylphenol ethoxylates, the film forming agent is carbamide peroxide, the corrosion inhibitor is diethylenetriamine, the pH value regulator is triethanolamine and sodium hydroxide, and no aluminum oxide powder is added.
The polishing solution prepared in comparative example 1 was tested for suspension stability according to the present invention, and the results are shown in table 2.
The polishing solutions prepared in comparative example 1 were subjected to polishing tests in accordance with the present invention, and the results are shown in Table 3.
Comparative example 2
The preparation process was the same as in example 1.
Materials were added in the amounts shown in Table 1, and the compositions were substantially the same as in example 1 except that no silica was added.
The suspension stability of the polishing solution prepared in comparative example 2 was tested, and the results are shown in Table 2.
The polishing liquid prepared in comparative example 2 was subjected to polishing test in accordance with the present invention, and the results are shown in Table 3.
Comparative example 3
The preparation process was the same as in example 1.
The materials were added in the amounts shown in Table 1, the compositions being essentially the same as in example 1, except that no dispersant was added.
The suspension stability of the polishing solution prepared in comparative example 3 was tested, and the results are shown in Table 2.
The polishing solution prepared in comparative example 3 was subjected to polishing test in the present invention, and the results are shown in Table 3.
Comparative example 4
The preparation process was the same as in example 1.
The materials were added in the amounts shown in Table 1, the compositions being essentially the same as in example 1, except that no corrosion inhibitor was added.
The polishing solution prepared in comparative example 4 was tested for suspension stability according to the present invention, and the results are shown in table 2.
The polishing solution prepared in comparative example 4 was subjected to polishing test in the present invention, and the results are shown in Table 3.
Comparative example 5
The preparation process was the same as in example 1.
The materials were added in the amounts shown in Table 1, the compositions being essentially the same as in example 1, except that alumina having a particle size of 50nm and fumed silica having a particle size of 40nm were added thereto.
The polishing solution prepared in comparative example 5 was tested for suspension stability according to the present invention, and the results are shown in Table 2.
The polishing liquid prepared in comparative example 5 was subjected to polishing test in the present invention, and the results are shown in Table 3.
Comparative example 6
The preparation process was the same as in example 1.
The materials were added in the amounts shown in Table 1, the compositions being essentially the same as in example 1, except that alumina having a particle size of 500nm and fumed silica having a particle size of 400nm were added thereto.
The suspension stability of the polishing solution prepared in comparative example 6 was tested, and the results are shown in Table 2.
The polishing liquid prepared in comparative example 6 was subjected to polishing test in accordance with the present invention, and the results are shown in Table 3.
From the above embodiments, the invention provides a water-based composite polishing solution for polishing ceramics, which comprises the following components in parts by mass: 6-21% of alumina with the particle size of 80-350 nm, 6-18% of fumed silica with the particle size of 50-300 nm, 0.9-4.5% of dispersing agent, 0.04-1.8% of film forming agent, 0.08-0.4% of corrosion inhibitor, 1.4-3% of pH value regulator and the balance of water; the dispersing agent is selected from one or more of zinc phosphate, sucrose monostearate, polyvinylpyrrolidone, isothiazolinone, nonylphenol polyoxyethylene ether, dodecylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether. The polishing solution provided by the invention has higher apparent yield and polishing rate for polishing the ceramic wafer under the synergistic effect of the components with the contents. In addition, the polishing solution has strong stability and good suspension property. The experimental results show that: standing the polishing solution for 72 hours until the layering height still reaches 22/25-24/25; compared with the silica sol polishing solution in the prior art, when the polishing solution provided by the invention is used for polishing a ceramic wafer, the average polishing rate of a product is increased from 9-11 mu m/h to 22-31 mu m/h; the surface roughness Ra is reduced from 2.65nm to Ra less than 0.3 nm; the yield of the product is improved from 28.4 percent to more than 90 percent, and the surface roughness is reduced from 3.883nm to Ra of less than 0.3 nm.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (3)
1. A water-based composite polishing solution for polishing ceramics comprises the following components in parts by mass:
6-21% of alumina with the particle size of 80-350 nm, 6-18% of fumed silica with the particle size of 50-300 nm, 0.9-4.5% of dispersing agent, 0.04-1.8% of film forming agent, 0.08-0.4% of corrosion inhibitor, 1.4-3% of pH value regulator and the balance of water;
the dispersing agent is selected from one or more of sucrose monostearate, polyvinylpyrrolidone and alkylphenol polyoxyethylene;
the film forming agent is selected from one or more of 5-methyl tetrazole, 4-hydroxybenzotriazole butyl ester and 4-carboxyl benzotriazole methyl ester;
the corrosion inhibitor is selected from benzimidazole and/or isopropamide;
the pH value regulator is a composite alkali of organic alkali and inorganic alkali; the organic alkali is selected from one or more of hexahydroxyethyl ethylenediamine, butyl sultone, hydroxyethyl ethylenediamine, diethanolamine, triethanolamine and tetramethylammonium hydroxide; the inorganic base is selected from one or more of ammonia water, sodium hydroxide and potassium hydroxide;
the pH value of the water-based composite polishing solution for polishing the ceramic is 8-12.
2. A method for preparing the water-based composite polishing solution for polishing ceramics according to claim 1, comprising the following steps:
mixing water and a dispersant to obtain a first mixture;
mixing alumina with the particle size of 80-350 nm, fumed silica with the particle size of 50-300 nm and the first mixture to obtain a second mixture;
mixing the film forming agent, the corrosion inhibitor and the second mixture to obtain a third mixture;
and mixing the third mixture with a pH value regulator, and performing ultrasonic dispersion to obtain the water-based composite polishing solution for ceramic polishing.
3. The method according to claim 2, wherein the dispersant, the film former and the corrosion inhibitor are added at a rate of 0.7 to 1.5L/min.
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| CN107001914A (en) * | 2014-11-12 | 2017-08-01 | 福吉米株式会社 | Composition for polishing and the manufacture method using its substrate |
| CN107109195A (en) * | 2014-12-26 | 2017-08-29 | 福吉米株式会社 | The manufacture method of composition for polishing, Ginding process and ceramics part processed |
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| CN1422200A (en) * | 2000-04-07 | 2003-06-04 | 卡伯特微电子公司 | Integrated chemical-mechanical polishing |
| CN107001914A (en) * | 2014-11-12 | 2017-08-01 | 福吉米株式会社 | Composition for polishing and the manufacture method using its substrate |
| CN107109195A (en) * | 2014-12-26 | 2017-08-29 | 福吉米株式会社 | The manufacture method of composition for polishing, Ginding process and ceramics part processed |
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