CN109936344A - A kind of fractionation structure resonator - Google Patents
A kind of fractionation structure resonator Download PDFInfo
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- CN109936344A CN109936344A CN201811633416.1A CN201811633416A CN109936344A CN 109936344 A CN109936344 A CN 109936344A CN 201811633416 A CN201811633416 A CN 201811633416A CN 109936344 A CN109936344 A CN 109936344A
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Abstract
The invention discloses a kind of fractionation structure resonator, the fractionation structure resonator is made of resonator group several subresonators, and the equivalent impedance of the resonator group is equal to the impedance of former single resonator；It at most only exists and is electrically connected between the adjacent subresonator of every two, and acoustically keep being isolated；Each subresonator includes lower electrode, piezoelectric layer, top electrode；The present invention not only increases equivalent area, but also can increase the perimeter area ratio of resonator, to improve the heat dissipation performance of resonator and the power capacity of electronic device entirety.
Description
Technical field
The present invention relates to a kind of resonators, and in particular to a kind of fractionation structure resonator.
Background technique
Using piezoelectric membrane thin film wave resonator made by longitudinal resonance of thickness direction, in mobile communication and height
Fast serial data application etc. has become a feasible substitution of SAW device and quartz-crystal resonator.Radio frequency
Front end bulk wave filters/duplexer provides superior filtering characteristic, such as low insertion loss, and precipitous intermediate zone is stronger anti-
Static discharge (ESD) ability.The electronic devices power capacity such as filter resonator is required with fields such as current communications
It is continuously improved, the calorific value of filter resonator significantly increases.The high temperature that high heating tape comes will cause device Q value and electromechanical coupling
Collaboration number declines to a great extent；Furthermore high temperature also will cause the frequency shifts by resonator；In addition it is whole also to reduce device for high temperature
Body life time.The above problems eventually lead to the performance parameter such as bandwidth of the filter of resonator composition, and insertion loss roll-offs
Serious deterioration occurs for characteristic, Out-of-band rejection etc..
The traditional means of reply heating problem are the areas for increasing resonator.This method can have in certain power bracket
Effect reduces the power density in resonator, to reduce the operating temperature of resonator.But the simple method by increase area is
It is not able to satisfy requirement of the current resonator to power capacity, needs to be further improved traditional structure.
Summary of the invention
The purpose of the present invention is to provide a kind of fractionation structure resonator, equivalent area is not only increased, and can also be increased
Add the perimeter area ratio of resonator, to improve the heat dissipation performance of resonator and the power capacity of electronic device entirety.
A kind of fractionation structure resonator, the fractionation structure resonator is the resonator being made of several subresonators
Group, the equivalent impedance of the resonator group are equal to the impedance of former single resonator；Between the adjacent subresonator of every two
It at most only exists and is electrically connected, and acoustically keep being isolated；The subresonator include lower electrode, piezoelectric layer, on
Electrode.
Optionally, setting is there are two pin on the resonator group, and two pins occupy the first potential point and the respectively
Two potential points, and connect with other electronic components.
Optionally, the top electrode of the top electrode of the subresonator and/or lower electrode subresonator adjacent thereto and/or
Lower electrode is electrically connected.
Optionally, the C axis of the subresonator piezoelectric layer is directed toward another potential point from a potential point；
Optionally, the C axis of a part of resonator piezoelectric layer can be directed toward the second potential point by the first potential point；Another part is humorous
The C axis of vibration device piezoelectric layer can be directed toward the first potential point by the second potential point.
Optionally, the circuit of the resonator group is connected in series by several units；In each unit and it is connected to n
The subresonator and/or the circuit of a (n > 1) are connected into m (m > 1) units.
Optionally, there is certain resonator piezoelectric layer ' C axis to be directed toward and constitute for the unit ', the C axis is directed toward to constitute and want
It asks: a certain subresonator in a certain subresonator unit identical or described with the C axis direction of remaining subresonator in the unit
It is opposite with the C axis of at least one in remaining subresonator direction.
Optionally, some described unit and remaining described unit have certain ' unit C axis composition ' relationship, the relationship
It is required that: some described unit and remaining described unit have same unit C axis constituent relation or some described unit and remaining institute
Stating at least one unit in unit has opposite unit C axis constituent relation.
Optionally, the unit it is in parallel by least two adjacent subresonators and at least one other subresonator string
Join.
Optionally, the top electrode is made with the lower electrode of metal, the multilayer materials of metal or alloy；It is described
Metal includes at least one of: molybdenum, ruthenium, gold, magnesium, aluminium, tungsten, titanium, chromium, iridium, osmium.
Optionally, the material of the piezoelectric layer includes at least one of: aluminium nitride, zinc oxide, lead titanate-zirconate (PZT),
Rare earth doped element in the piezoelectric material.
The beneficial effects of the present invention are: under the premise of equivalent impedance is identical, by a resonator be split as it is multiple can
Improve power capacity.Each subresonator area can be made to become larger by the way of mere in-line fractionation, be brought although area becomes larger
The reduction of power density, but if thermal gradient and Temperature Distribution are more uneven in the excessive then each resonator of resonator area,
Resonator performance under high power input is caused sharply to decline；Area increase simultaneously also causes resonator and is rigidly deteriorated, and aggravates humorous
It shakes deformation of the device under stress, so as to cause resonator q decline, ultimately causes device performance degradation, bad stability,
The problems such as lost of life, excessive filter overall dimensions；And merely using fractionation mode in parallel, and each subresonator face can be made
Product becomes smaller, and keeps the perimeter area ratio of resonator excessive, the specific energy loss of each resonator is caused to rise, to reduce each humorous
The Q value of vibration device, equally will affect the performance of resonator.Therefore, the present invention is torn open to overcome the above problem using parallel connection series connection
The circuit constituted mode that form-separating combines, keeps each subresonator area moderate, while improving the power capacity of resonator.
Detailed description of the invention
Fig. 1 is 1 schematic top plan view of the embodiment of the present invention；
Fig. 2 is the circuit diagram of the embodiment of the present invention 1；
Fig. 2 a is the circuit diagram another way of the embodiment of the present invention 1；
Fig. 2 b is the circuit diagram another way of the embodiment of the present invention 1；
Fig. 2 c is the circuit diagram another way of the embodiment of the present invention 1；
Fig. 3 is the circuit diagram of the embodiment of the present invention 2；
Fig. 4 is the circuit diagram another way of the embodiment of the present invention 2；
Fig. 5 is to illustrate a 1a；
Fig. 6 is to illustrate a 1b；
Fig. 7 is to illustrate a 1c；
Fig. 8 is to illustrate a 1d；
Fig. 9 is to illustrate a 1e.
Lower electrode 100, piezoelectric layer 120 and top electrode 130 in figure.
Specific embodiment
The following are better embodiments of the invention, but are not intended to limit the scope of the present invention.
Embodiment 1:
Traditional single resonator is split into 4 resonators R101, R102, R103 and R104 by A100, is abstracted circuit
Figure is shown in Fig. 2.
The resonator division principle of A100 is equivalent impedance division, that is, the equivalent impedance of resonator group is equivalent after ensuring to divide
In the impedance of former single resonator.
Fig. 1 gives the specific succession of the basic structure schematic diagram sum of 4 resonators:
Each resonator (by taking R101 as an example) has lower electrode 100, piezoelectric layer 120 and top electrode 130.
The top electrode of R101 has pin C100, and the top electrode of R101 and the top electrode of R102 are electrically connected
The lower electrode of C101, R101 and the lower electrode of R102 are electrically connected C103；The lower electrode of R102 and the lower electrode of R103 are sent out
Life is electrically connected C104；And the top electrode of R103 and the top electrode of R104 are electrically connected C102, the lower electrode of R103 with
The lower electrode of R104 is electrically connected C105, and the top electrode of R104 has pin C106.
R101 and R102 is subjected to parallel connection herein and guarantees that two resonator input voltages are absolutely identical, to guarantee the two
The electrical response of resonator it is identical or on the contrary, to eliminate resonator it is non-linear caused by influence or enhancing resonance is special
Property；Likewise, R103 and R104, which is carried out parallel connection, also can achieve same effect.
Herein it should be noted that above-mentioned top electrode is made with the lower electrode of the multilayer materials or magnesium of molybdenum；
It at most only exists and is electrically connected between every two adjacent resonators, and acoustically keep being isolated.
Furthermore the circuit structure of Fig. 2 can be expanded further are as follows: (1) (such as R101 and R103 are constituted in each parallel units
Parallel units U101) and be connected to more subresonators (as shown in Figure 2 a)；(2) on each of each parallel units road
Series winding such as more multi-resmator；Or (3) connect on the basis of Fig. 2 into more parallel units (such as R101 and R103 constitute and
Receipts or other documents in duplicate member) (as shown in Figure 2 b)；Or the mode of (1), (2) and (3) is combined by (4).
The circuit expanded for circuit shown in Fig. 2 and in a manner described, wherein the direction of resonator C axis and constituted mode can
Using following form:
(1) the C axis of whole resonators is directed toward the second current potential by the first current potential；Or the first current potential is directed toward by the second current potential.
(2) the C axis of partial resonance device is directed toward the second current potential by the first current potential；The C axis of another part resonator is by the second electricity
It is directed toward the first current potential in position.
Under situation (2), optionally, in some unit the C axis of any two resonator of (such as U101) present S1 or
S2 is constituted.Remaining expands at least one in unit with said units into AU or SU relationship；Further, if it exists p it is single
First be SU relationship between each other, and q unit and above-mentioned p unit are in AU relationship, then p can be equal to q, and circuit is in sky
Between arrangement on can have certain symmetry (such as periodicity or axial symmetry etc.).
Or it is optional, A1 or A2 structure is presented in the C axis that at least there are two resonators of (such as U101) in some unit
At further, the quantity of the opposite resonator of C axis direction can be reciprocity in some unit, and circuit can on spatial arrangement
With certain symmetry (such as periodicity or axial symmetry etc.).
Remaining expands at least one in unit with said units into AU or SU relationship；Further, if it exists p it is single
First be SU relationship between each other, and q unit and above-mentioned p unit are in AU relationship, then p can be equal to q, and circuit is in sky
Between arrangement on can have certain symmetry (such as periodicity or axial symmetry etc.).
It is constituted using A1 and A2 type crystal orientation and the non-linear of circuit can be effectively suppressed in AU and SU unit C axis constituent relation
Effect, such as inhibit 2 times and 3 subharmonic.
Above-mentioned piezoelectric layer is made of the zinc oxide material of aluminium nitride material or rare earth doped element.The piezoelectric material is thickness
Spend the film less than 10 microns.Aluminium nitride film is heteromorphs or single crystal forms, and growth pattern is thin film sputtering
(sputtering) or Metalorganic chemical vapor deposition method (MOCVD).In addition, the piezoelectric material can also mix certain ratio
Example rare earth element impurity.
Final equivalent impedance is required to remain unchanged with upper type.
Embodiment 2:
Traditional single resonator is split into 6 resonators R201, R202, R203, R204, R205 and R206 by A200.
Its abstract circuit diagram is shown in Fig. 3.
The resonator division principle of A200 is equivalent impedance division, that is, the equivalent impedance of resonator group is equivalent after ensuring to divide
In the impedance (such as 50 Ω) of former single resonator.
Fig. 3 gives the specific succession of 6 resonators:
The top electrode of R201 has pin C200, and the top electrode of R201 and the top electrode of R202 are electrically connected
C201；The lower electrode of R201 and the lower electrode of R203 are electrically connected C204；The lower electrode of R202 and the lower electrode of R203 are sent out
Life is electrically connected C205；The top electrode of R203 and the top electrode of R204 are electrically connected C202；The top electrode and R205 of R204
Top electrode be electrically connected C203；The lower electrode of R204 and the lower electrode of R206 are electrically connected C206；Under R205
The lower electrode of electrode and R206 are electrically connected C207, and the top electrode of R206 has pin C208.
Herein it should be noted that above-mentioned top electrode is made with the lower electrode of the multilayer materials or gold of ruthenium；
It at most only exists and is electrically connected between every two adjacent resonators, and acoustically keep being isolated.
Furthermore the circuit structure of Fig. 3 can be expanded further are as follows: (1) (such as R201 and R202 are constituted in each parallel units
Parallel units) and be connected to more subresonators；(2) it connects in each branch in each parallel units humorous into more sons
Shake device；Or (3) connect (at such as R203 and R206) into more multi-resmator at the resonator of the series position of Fig. 3；Or (4)
It is connected on the basis of fig. 4 into more units (shaped like the unit U201 that R201, R202 and R203 are constituted, as shown in Figure 4)；
Or the mode of (1)-(4) is combined by (5).
The circuit expanded for circuit shown in Fig. 3 and in a manner described, wherein the direction of resonator C axis and constituted mode can
Using following form:
(1) the C axis of whole resonators is directed toward the second current potential by the first current potential；Or the first current potential is directed toward by the second current potential.
(2) the C axis of partial resonance device is directed toward the second current potential by the first current potential；The C axis of another part resonator is by the second electricity
It is directed toward the first current potential in position.
Under situation (2), the C axis of any two resonator in some unit is presented S1 or S2 and constitutes.Remaining is opened up
At least one in unit is opened up with said units into AU or SU relationship；Further, p unit is SU between each other if it exists
Relationship, and q unit and above-mentioned p unit are in AU relationship, then p can be equal to q, and circuit can have certain on spatial arrangement
Kind symmetry (such as periodicity or axial symmetry etc.).
Or it is optional, the C axis that at least there are two resonators in some unit is presented A1 or A2 and constitutes, further
, the quantity of the opposite resonator of C axis direction can be reciprocity in some unit, and circuit can have certain right on spatial arrangement
Title property.
Remaining expands at least one in unit with said units into AU or SU relationship；Further, if it exists p it is single
First be SU relationship between each other, and q unit and above-mentioned p unit are in AU relationship, then p can be equal to q, and circuit is in sky
Between arrangement on can have certain symmetry (such as periodicity or axial symmetry etc.).
It is constituted using A1 and A2 type crystal orientation and the non-linear of circuit can be effectively suppressed in AU and SU unit C axis constituent relation
Effect, such as inhibit 2 times and 3 subharmonic.
Above-mentioned piezoelectric layer is made of the lead titanate-zirconate material of zinc oxide or rare earth doped element.The piezoelectric material is that thickness is small
In 10 microns of film.Aluminium nitride film is heteromorphs or single crystal forms, and growth pattern is thin film sputtering
(sputtering) or Metalorganic chemical vapor deposition method (MOCVD).In addition, the piezoelectric material can also mix certain ratio
Example rare earth element impurity.
Final equivalent impedance is required to remain unchanged with upper type.
Embodiment 3
The present embodiment is that subresonator C axis of the present invention is directed toward and C axis is directed toward the preparation property explanation constituted:
C axis direction is defined as in a bulk acoustic wave resonator or resonator group aluminium nitride piezoelectricity in some bulk acoustic wave resonator
Crystallographic axis in layer is relative to the electricity being applied on two electrode pins of bulk acoustic wave resonator or on two pins of resonator group
The relationship of position.
In illustrating a 1a, resonator R1 and R2, resonator R1 are parallel between two different potential point P1 and P2
A lateral electrode have current potential P1, another lateral electrode have current potential P2.And the crystallographic axis of piezoelectric layer is directed toward electricity from the side current potential P1 in R1
The position side P2.
A lateral electrode of resonator R2 has current potential P1, and another lateral electrode has current potential P2.And in R2 piezoelectric layer crystallographic axis
The side current potential P1 is directed toward from the side of current potential P2.
So for given two reference point of potentials P1 and P2, then it is opposite for claiming the C axis of R1 and R2.In addition, R1 and
R2 reversed situation also includes that the C axis of R1 is directed toward P2 by P1 by the C axis that P2 is directed toward P1 while R2.
If the C axis of R1 and R2 is to claim the C axis of R1 and R2 in the same direction to be directed toward P2 by P1.Furthermore the C axis of R1 and R2 is same
To the case where also include the C axis of R1 and R2 be to be directed toward P1 by P2.
The above-mentioned C axis direction description rule for R1 and R2 is equally applicable to illustrate situation of connecting shown in a 1b, and C axis
It is directed toward the relativeness constituted between the C axis direction for referring to another vibration device in certain electricity linking relationship.
In illustrating a 1a, the parallel-connection structure of R1 and R2, which are formed a kind of C axis and are directed toward, to be constituted, and the c-axis of R1 and R2 are same
To then claiming the C axis of R1 and R2 to be configured to parallel connection C axis in the same direction and constitute (abbreviation S1 composition), otherwise referred to as reverse parallel connection C axis composition
(abbreviation A1 composition).
Likewise, as illustrated shown in a 1b, if R1 and R2 are series relationships, when the C axis of R1 and R2 is in the same direction, claim R1 and
The C axis of R2 is configured to series aiding connection C axis and constitutes (abbreviation S2 composition)；When the C axis of R1 and R2 is reversed, claim the C axis structure of R1 and R2
(abbreviation A2 composition) is constituted as differential concatenation C axis.
For the circuit combined in series and parallel, the composition of the wherein C axis of certain two resonator can be equally defined.Such as illustrate example
Shown in 1c, R1 and R2 constitute parallel units, then connect again with R3.Wherein the c axis of R1 and R2 forms A1 and constitutes, the C of R1 and R3
Axis forms A2 and constitutes, and the C axis of R2 and R3 forms S2 and constitutes.
Usual resonator circuit can also be expanded with some structural unit, such as be illustrated shown in a 1d, in U1 unit
The structure having are as follows: R1 and R2 parallel connection is connected with R3 again, and the structure in U2 unit is the repetition of U1 element circuit structure.This
When, if as shown in example 1d, in U1 the C axis of each resonator (such as R1) with it in U2 corresponding resonator (such as R1 ')
C axis direction it is identical, then claim U1 and U2 unit C axis having the same to constitute (the C axis of referred to as two units is constituted in SU relationship).
If situation is as shown in example 1e: i.e. in U1 the C axis of each resonator (such as R1) with it in U2 corresponding resonance
The C axis direction of device (such as R1 ') is on the contrary, then claim U1 and U2 that there is opposite unit C axis to constitute (the referred to as C axis structure of two units
At in AU relationship).
One resonator is split as by the fractionation structure resonator that the present invention designs under the premise of equivalent impedance is identical
It is multiple that power capacity can be improved.Each subresonator area can be made to become larger by the way of mere in-line fractionation, although area becomes
The reduction of power density is brought greatly, but thermal gradient and Temperature Distribution are more uneven in each resonator, cause resonator in height
Performance sharply declines under power input；Area increase simultaneously also causes resonator and is rigidly deteriorated, and aggravates resonator in stress
Under deformation, so as to cause resonator q decline, ultimately cause device performance degradation, bad stability, the lost of life, filtering
The problems such as device overall dimensions are excessive；And merely using fractionation mode in parallel, and each subresonator area can be made to become smaller, make resonance
The perimeter area ratio of device is excessive, and the specific energy loss of each resonator is caused to rise, to reduce the Q value of each resonator, together
Sample will affect the performance of resonator.Therefore, the present invention combines to overcome the above problem using series connection fractionation form in parallel
Circuit constituted mode keeps each subresonator area moderate, while improving the power capacity of resonator.
The above is only the preferred embodiment of the present invention, it is noted that those skilled in the art are come
It says, without departing from the technical principles of the invention, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (13)
1. a kind of fractionation structure resonator, it is characterised in that: the fractionation structure resonator is made of several subresonators
Resonator group, the equivalent impedance of the resonator group is equal to the impedance of former single resonator；The adjacent son of every two is humorous
It only exists and is electrically connected between vibration device, and acoustically keep being isolated；Each subresonator includes lower electrode, piezoelectricity
Layer, top electrode.
2. a kind of fractionation structure resonator according to claim 1, it is characterised in that: be provided with two on the resonator group
A pin, and two pins occupy the first potential point and the second potential point respectively, and connect with other electronic components.
3. a kind of fractionation structure resonator according to claim 1, it is characterised in that: the top electrode of the subresonator
And/or lower electrode subresonator adjacent thereto top electrode and/or lower electrode be electrically connected.
4. a kind of fractionation structure resonator according to claim 1, it is characterised in that: the C of the subresonator piezoelectric layer
Axis is directed toward another potential point from a potential point.
5. a kind of fractionation structure resonator according to claim 4, it is characterised in that: the C of a part of resonator piezoelectric layer
Axis can be directed toward the second potential point by the first potential point；The C axis of another part resonator piezoelectric layer can be directed toward the by the second potential point
One potential point.
6. a kind of fractionation structure resonator according to claim 1, it is characterised in that: if the circuit of the resonator group by
A dry unit is connected in series；In each unit and be connected to the subresonator of n (n > 1) and/or the circuit connect into
M (m > 1) units.
7. a kind of fractionation structure resonator according to claim 4,5 or 6, it is characterised in that: the unit has certain
Resonator piezoelectric layer ' C axis be directed toward constitute ', the C axis is directed toward to constitute and require: in the unit a certain subresonator and remaining
The C axis of subresonator is directed toward a certain subresonator and the C axis of at least one in remaining subresonator in the identical or described unit and refers to
To opposite.
8. a kind of fractionation structure resonator according to claim 7, it is characterised in that: some described unit and remaining described in
With certain, ' unit C axis composition ' relationship, the concerns mandate: some described unit and remaining described unit have phase to unit
There is opposite unit C axis structure at least one unit in unit C axis constituent relation or some described unit and remaining described unit
At relationship.
9. a kind of fractionation structure resonator as claimed in claim 6, it is characterised in that: the unit is by least two adjacent sons
Resonator parallel connection is connected in series at least one other subresonator again.
10. a kind of fractionation structure resonator according to claim 4,5 or 9, it is characterised in that: the unit has certain
Resonator piezoelectric layer ' C axis be directed toward constitute ', the C axis is directed toward to constitute and require: in the unit a certain subresonator and remaining
The C axis of subresonator is directed toward a certain subresonator and the C axis of at least one in remaining subresonator in the identical or described unit and refers to
To opposite.
11. a kind of fractionation structure resonator according to claim 10, it is characterised in that: some described unit and remaining institute
Stating unit, ' unit C axis composition ' relationship, the concerns mandate: some described unit and remaining described unit have with certain
At least one unit has opposite unit C axis in same unit C axis constituent relation or some described unit and remaining described unit
Constituent relation.
12. according to a kind of fractionation structure resonator described in claim 1 or 3, it is characterised in that: the top electrode and the lower electricity
Pole is made of metal, the multilayer materials of metal or alloy；The metal includes at least one of: molybdenum, ruthenium, gold, magnesium,
Aluminium, tungsten, titanium, chromium, iridium, osmium.
13. according to a kind of fractionation structure resonator described in claim 1, it is characterised in that: the material of the piezoelectric layer include with
It is at least one lower: aluminium nitride, zinc oxide, lead titanate-zirconate (PZT), rare earth doped element in the piezoelectric material.
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| CN110971209B (en) * | 2019-11-04 | 2023-10-20 | 天津大学 | Method for improving power capacity of bulk acoustic wave filter and filter element |
| CN112787622A (en) * | 2020-12-08 | 2021-05-11 | 诺思(天津)微系统有限责任公司 | Acoustic wave filter, multiplexer, and communication apparatus |
| WO2022121904A1 (en) * | 2020-12-08 | 2022-06-16 | 诺思(天津)微系统有限责任公司 | Acoustic wave filter, multiplexer, and communication device |
| CN117200741A (en) * | 2023-09-14 | 2023-12-08 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonance component and preparation method thereof |
| CN117200741B (en) * | 2023-09-14 | 2024-04-16 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonance component and preparation method thereof |
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