CN109935808A - A method of silicon-carbon cathode material is prepared based on micron silicon wafer - Google Patents
A method of silicon-carbon cathode material is prepared based on micron silicon wafer Download PDFInfo
- Publication number
- CN109935808A CN109935808A CN201910146041.4A CN201910146041A CN109935808A CN 109935808 A CN109935808 A CN 109935808A CN 201910146041 A CN201910146041 A CN 201910146041A CN 109935808 A CN109935808 A CN 109935808A
- Authority
- CN
- China
- Prior art keywords
- silicon
- silicon wafer
- cathode material
- carbon cathode
- micron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 68
- 239000010703 silicon Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 25
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000010406 cathode material Substances 0.000 title claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000002002 slurry Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- 239000002270 dispersing agent Substances 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 8
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- 239000007787 solid Substances 0.000 claims abstract description 8
- 238000010792 warming Methods 0.000 claims abstract description 8
- 239000006185 dispersion Substances 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 238000001237 Raman spectrum Methods 0.000 claims description 7
- 238000002441 X-ray diffraction Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 3
- 239000007773 negative electrode material Substances 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052744 lithium Inorganic materials 0.000 abstract description 4
- 239000002210 silicon-based material Substances 0.000 abstract description 4
- 239000003792 electrolyte Substances 0.000 abstract description 3
- 239000011863 silicon-based powder Substances 0.000 abstract description 3
- 239000011295 pitch Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229920002401 polyacrylamide Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 229910005321 Li15Si4 Inorganic materials 0.000 description 1
- 229910001290 LiPF6 Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002409 silicon-based active material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Silicon Compounds (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The present invention discloses a kind of method for preparing silicon-carbon cathode material based on micron silicon wafer, includes following steps: (1) being prepared for silicon wafer powder using electron beam evaporation method, the silicon thin film of 90-110nm thickness is deposited on the sheet metal of polymer-coated;(2) silicon thin film is removed from sheet metal, is ground into the microplate shape silicon wafer powder that lateral dimension is 3-5mm;(3) silicon wafer powder, pitch are added in the deionized water containing 0.5-5 wt% water soluble dispersing agent and are stirred dispersion, obtain slurry;(4) slurry is spray-dried, the solid after drying is warming up to 600-1500 DEG C, obtains silicon-carbon cathode material after high temperature cabonization 10-30h.Pass through the embedding lithium capacity high using silicon materials, so that the negative electrode material being prepared has biggish discharge capacity and higher first charge-discharge efficiency when being used to prepare half-cell, micron flakes silicon powder is closely combined using agraphitic carbon, disperse silicon micron chip and reduce itself and electrolyte interface, improves the stability and battery performance of silicon-carbon cathode material.
Description
Technical field
The present invention relates to negative electrode material field technology, refer in particular to a kind of prepare silicon-carbon cathode material based on micron silicon wafer
Method.
Background technique
The raising that lithium ion battery with high energy density is required with power battery automobile and large-scale fixed energy storage device.By
In high gravimetric and volume capacity (3578 mAh/g and 2194 mAh/g, Li15Si4), and relatively low discharge potential
(0.4V vs Li/Li+), silicon materials are expected to become the negative electrode material of next-generation lithium ion battery with high energy density.
However, silicium cathode has a serious problem, i.e., capacity retention ratio is poor in repeated charge-discharge cycles.Silicium cathode difference
Cycle performance is to cause material cracked since silicon active material volume dilation is excessive in charge and discharge process and crush.
Summary of the invention
In view of this, in view of the deficiencies of the prior art, the present invention aims to provide one kind to be based on micron silicon
The method that piece prepares silicon-carbon cathode material, with good long circulating performance.
To achieve the above object, the present invention is using following technical solution:
A method of silicon-carbon cathode material is prepared based on micron silicon wafer, includes following steps:
(1) silicon wafer powder is prepared for using electron beam evaporation method, 90-110nm thickness is deposited on the sheet metal of polymer-coated
Silicon thin film;
(2) silicon thin film is removed from sheet metal, is ground into lateral dimension and is the microplate shape silicon wafer powder of 3-5mm, and passes through X-ray
Diffraction and Raman spectrum confirm the non crystalline structure of silicon wafer powder;
(3) silicon wafer powder, pitch are added in the deionized water containing 0.5-5 wt% water soluble dispersing agent and are stirred dispersion, obtained
To slurry;
(4) slurry is spray-dried, the solid after drying is warming up to 600-1500 DEG C, is obtained after high temperature cabonization 10-30h
Silicon-carbon cathode material.
As a preferred embodiment, the pitch partial size is≤50 μm.
As a preferred embodiment, the water soluble dispersing agent is one of acrylic compounds, maleic acid anhydride or a variety of.
As a preferred embodiment, the atmosphere that the high temperature cabonization uses is nitrogen, argon gas, nitrogen hydrogen mixed gas, argon
One of gas hydrogen mixed gas.
The present invention has obvious advantages and beneficial effects compared with the existing technology, specifically, by above-mentioned technical proposal
Known to:
By the embedding lithium capacity high using silicon materials, so that with larger when the negative electrode material being prepared is used to prepare half-cell
Discharge capacity and higher first charge-discharge efficiency, and micron flakes silicon powder is closely combined using agraphitic carbon, is made
Silicon micron chip disperses and reduces itself and electrolyte interface, improves the stability and battery performance of silicon-carbon cathode material,
And 500 times circulation volume conservation rate effectively improves.
Detailed description of the invention
Fig. 1 is the SEM figure of the silicon-carbon cathode material of embodiments of the present invention 1.
Specific embodiment
Present invention discloses a kind of methods for preparing silicon-carbon cathode material based on micron silicon wafer, include following steps:
(1) silicon wafer powder is prepared for using electron beam evaporation method, 90-110nm thickness is deposited on the sheet metal of polymer-coated
Silicon thin film.
(2) silicon thin film is removed from sheet metal, is ground into lateral dimension and is the microplate shape silicon wafer powder of 3-5mm, and passes through X
X ray diffraction and Raman spectrum confirm the non crystalline structure of silicon wafer powder.
(3) silicon wafer powder, pitch are added in the deionized water containing 0.5-5 wt% water soluble dispersing agent and are stirred point
It dissipates, obtains slurry.The pitch partial size is≤50 μm, and the water soluble dispersing agent is acrylic compounds, one in maleic acid anhydride
Kind is a variety of.
(4) slurry is spray-dried, the solid after drying is warming up to 600-1500 DEG C, after high temperature cabonization 10-30h
Obtain silicon-carbon cathode material.The atmosphere that the high temperature cabonization uses is mixed for nitrogen, argon gas, nitrogen hydrogen mixed gas, argon gas hydrogen
Close one of gas.
With multiple embodiments, invention is further described in detail below:
Embodiment 1:
A method of silicon-carbon cathode material being prepared based on micron silicon wafer, step includes:
(1) silicon wafer powder is prepared for using electron beam evaporation method, the silicon of 100 nm thickness is deposited on the sheet metal of polymer-coated
Film.
(2) silicon thin film is removed from sheet metal, is ground into lateral dimension and is the microplate shape silicon wafer powder of 3-5 mm, and passes through
X-ray diffraction and Raman spectrum confirm the non crystalline structure of silicon wafer powder.
(3) 3 wt% silicon wafer powder, 3 wt% pitches, 1 wt% polyacrylamide are stirred dispersion in deionized water, obtained
To slurry.
(4) slurry is spray-dried, the solid after drying is warming up to 1500 DEG C, obtains silicon after high temperature cabonization 12h
Carbon negative pole material.
Embodiment 2:
A method of silicon-carbon cathode material being prepared based on micron silicon wafer, step includes:
(1) silicon wafer powder is prepared for using electron beam evaporation method, the silicon that 90nm thickness is deposited on the sheet metal of polymer-coated is thin
Film.
(2) silicon thin film is removed from sheet metal, is ground into lateral dimension and is the microplate shape silicon wafer powder of 3-5 mm, and passes through
X-ray diffraction and Raman spectrum confirm the non crystalline structure of silicon wafer powder.
(3) 7 wt% silicon wafer powder, 0.7 wt% pitch, 3 wt% polyacrylamides are stirred dispersion in deionized water,
Obtain slurry.
(4) slurry is spray-dried, the solid after drying is warming up to 1300 DEG C, obtains silicon after high temperature cabonization 10h
Carbon negative pole material.
Embodiment 3:
A method of silicon-carbon cathode material being prepared based on micron silicon wafer, step includes:
(1) silicon wafer powder is prepared for using electron beam evaporation method, the silicon of 110 nm thickness is deposited on the sheet metal of polymer-coated
Film.
(2) silicon fiml is removed from sheet metal, is ground into lateral dimension and is the microplate shape silicon wafer powder of 3-5 mm, and passes through X
X ray diffraction and Raman spectrum confirm the non crystalline structure of silicon wafer powder.
(3) 4 wt% silicon wafer powder, 2 wt% pitches, 2 wt% polyacrylamides are stirred dispersion in deionized water, are obtained
To slurry.
(4) slurry is spray-dried, the solid after drying is warming up to 600 DEG C, obtains silicon-carbon after high temperature cabonization 30h
Negative electrode material.
Comparative example 1:
Difference with embodiment 1 is: being not added with water soluble dispersing agent.
A method of lithium ion silicon-carbon cathode material being prepared, step includes:
(1) silicon wafer powder is prepared for using electron beam evaporation method, the silicon of 100 nm thickness is deposited on the sheet metal of polymer-coated
Film.
(2) silicon thin film is removed from sheet metal, is ground into lateral dimension and is the microplate shape silicon wafer powder of 3-5 mm, and passes through
X-ray diffraction and Raman spectrum confirm the non crystalline structure of silicon wafer powder.
(3) 3 wt% silicon wafer powder, 3 wt% pitches are stirred dispersion in deionized water, obtain slurry.
(4) slurry is spray-dried, the solid after drying is warming up to 1500 DEG C, obtains silicon after high temperature cabonization 12h
Carbon negative pole material.
Performance characterization:
Discharge capacity and charge and discharge for the first time are carried out to the negative electrode material in embodiment and comparative example using half-cell test method
As a result the test of electrical efficiency is listed in table 1.Half-cell test method are as follows: use above-mentioned negative electrode material, while simulated battery is assemblied in
Carried out in the glove box of inflated with nitrogen, electrolyte is 1M LiPF6+EC+DEC+DMC=1:1:1(volume ratio), metal lithium sheet is to electricity
Pole, electrochemical property test carry out on blue electrical testing cabinet, and charging/discharging voltage range is 0.05 to 5.0V, and charge-discharge velocity is
0.1C。
Table 1
Discharge capacity (mAh/g) | First charge-discharge efficiency (%) | 500 circulation volume conservation rates (%) | |
Embodiment 1 | 1797 | 95 | 97 |
Embodiment 2 | 1542 | 94 | 96 |
Embodiment 3 | 1623 | 92 | 96 |
Comparative example 1 | 1508 | 83 | 84 |
As it can be seen from table 1 half-cell prepared by the cathode pole piece of embodiment 1-3 has biggish discharge capacity and higher head
Secondary efficiency for charge-discharge, this is mainly due to the high embedding lithium capacity of silicon materials.And 500 circulation volume conservation rates are compared with comparative example
Height is mainly closely combined micron flakes silicon powder due to agraphitic carbon, is dispersed silicon micron chip and is reduced itself and electrolysis
Matter contact surface improves the stability and battery performance of silicon based anode material.
The above described is only a preferred embodiment of the present invention, be not intended to limit the scope of the present invention,
Therefore any subtle modifications, equivalent variations and modifications to the above embodiments according to the technical essence of the invention, still
Belong in the range of technical solution of the present invention.
Claims (4)
1. a kind of method for preparing silicon-carbon cathode material based on micron silicon wafer, it is characterised in that: include following steps:
(1) silicon wafer powder is prepared for using electron beam evaporation method, 90-110nm thickness is deposited on the sheet metal of polymer-coated
Silicon thin film;
(2) silicon thin film is removed from sheet metal, is ground into lateral dimension and is the microplate shape silicon wafer powder of 3-5mm, and passes through X-ray
Diffraction and Raman spectrum confirm the non crystalline structure of silicon wafer powder;
(3) silicon wafer powder, pitch are added in the deionized water containing 0.5-5 wt% water soluble dispersing agent and are stirred dispersion, obtained
To slurry;
(4) slurry is spray-dried, the solid after drying is warming up to 600-1500 DEG C, is obtained after high temperature cabonization 10-30h
Silicon-carbon cathode material.
2. a kind of method for preparing silicon-carbon cathode material based on micron silicon wafer according to claim 1, it is characterised in that: institute
Stating pitch partial size is≤50 μm.
3. a kind of method for preparing silicon-carbon cathode material based on micron silicon wafer according to claim 1, it is characterised in that: institute
Stating water soluble dispersing agent is one of acrylic compounds, maleic acid anhydride or a variety of.
4. a kind of method for preparing silicon-carbon cathode material based on micron silicon wafer according to claim 1, it is characterised in that: institute
The atmosphere that high temperature cabonization uses is stated as one of nitrogen, argon gas, nitrogen hydrogen mixed gas, argon gas hydrogen mixed gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910146041.4A CN109935808A (en) | 2019-02-27 | 2019-02-27 | A method of silicon-carbon cathode material is prepared based on micron silicon wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910146041.4A CN109935808A (en) | 2019-02-27 | 2019-02-27 | A method of silicon-carbon cathode material is prepared based on micron silicon wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109935808A true CN109935808A (en) | 2019-06-25 |
Family
ID=66986017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910146041.4A Pending CN109935808A (en) | 2019-02-27 | 2019-02-27 | A method of silicon-carbon cathode material is prepared based on micron silicon wafer |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109935808A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112234178A (en) * | 2020-10-20 | 2021-01-15 | 陕西煤业化工技术研究院有限责任公司 | Superfine nano silicon/carbon composite material and preparation method and application thereof |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101800305A (en) * | 2010-03-09 | 2010-08-11 | 福建师范大学 | Method for depositing silicon film at surface of lithium titanate cathode of lithium ion battery |
CN101847708A (en) * | 2009-03-27 | 2010-09-29 | 比亚迪股份有限公司 | Cathode for lithium-ion secondary battery, method for producing same and lithium-ion secondary battery using same |
JP2011065983A (en) * | 2009-08-21 | 2011-03-31 | Oike Ind Co Ltd | Scale-like thin film fine powder dispersion liquid or scale-like thin film fine powder, and paste using the same, electrode for battery, and lithium secondary battery |
CN102244240A (en) * | 2011-06-15 | 2011-11-16 | 中南大学 | Lithium ion battery composite anode material and preparation method thereof |
CN105247704A (en) * | 2011-11-22 | 2016-01-13 | 国际商业机器公司 | Composite anode structure for high energy density lithium-ion batteries |
CN105680013A (en) * | 2016-01-26 | 2016-06-15 | 湖南有色金属研究院 | Preparation method for silicon/graphite/carbon composite negative electrode material of lithium ion battery |
CN107221579A (en) * | 2017-06-09 | 2017-09-29 | 常州比太科技有限公司 | Solar cell film plating process and solar cell |
CN107416839A (en) * | 2017-09-11 | 2017-12-01 | 商永辉 | A kind of method for preparing lithium ion battery negative material using the discarded silica flour slurry of Buddha's warrior attendant wire cutting |
CN107615528A (en) * | 2015-06-22 | 2018-01-19 | 株式会社日立制作所 | Lithium ion secondary battery cathode active material and lithium rechargeable battery |
-
2019
- 2019-02-27 CN CN201910146041.4A patent/CN109935808A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101847708A (en) * | 2009-03-27 | 2010-09-29 | 比亚迪股份有限公司 | Cathode for lithium-ion secondary battery, method for producing same and lithium-ion secondary battery using same |
JP2011065983A (en) * | 2009-08-21 | 2011-03-31 | Oike Ind Co Ltd | Scale-like thin film fine powder dispersion liquid or scale-like thin film fine powder, and paste using the same, electrode for battery, and lithium secondary battery |
CN101800305A (en) * | 2010-03-09 | 2010-08-11 | 福建师范大学 | Method for depositing silicon film at surface of lithium titanate cathode of lithium ion battery |
CN102244240A (en) * | 2011-06-15 | 2011-11-16 | 中南大学 | Lithium ion battery composite anode material and preparation method thereof |
CN105247704A (en) * | 2011-11-22 | 2016-01-13 | 国际商业机器公司 | Composite anode structure for high energy density lithium-ion batteries |
CN107615528A (en) * | 2015-06-22 | 2018-01-19 | 株式会社日立制作所 | Lithium ion secondary battery cathode active material and lithium rechargeable battery |
CN105680013A (en) * | 2016-01-26 | 2016-06-15 | 湖南有色金属研究院 | Preparation method for silicon/graphite/carbon composite negative electrode material of lithium ion battery |
CN107221579A (en) * | 2017-06-09 | 2017-09-29 | 常州比太科技有限公司 | Solar cell film plating process and solar cell |
CN107416839A (en) * | 2017-09-11 | 2017-12-01 | 商永辉 | A kind of method for preparing lithium ion battery negative material using the discarded silica flour slurry of Buddha's warrior attendant wire cutting |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112234178A (en) * | 2020-10-20 | 2021-01-15 | 陕西煤业化工技术研究院有限责任公司 | Superfine nano silicon/carbon composite material and preparation method and application thereof |
CN112234178B (en) * | 2020-10-20 | 2022-03-08 | 陕西煤业化工技术研究院有限责任公司 | Superfine nano silicon/carbon composite material and preparation method and application thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108023072A (en) | A kind of silicon-carbon composite cathode material of lithium ion battery and preparation method thereof | |
CN107195893A (en) | A kind of lithium ion battery boron-doping silicon base negative material | |
CN103400962A (en) | Spherical LiFePO4/(C+La2/3-xLi3xTiO3) composite anode material and preparation method thereof | |
CN105742695B (en) | A kind of lithium ion battery and preparation method thereof | |
CN105226267B (en) | Three dimensional carbon nanotubes modification spinel nickel lithium manganate material and its preparation method and application | |
CN112670461A (en) | Natural graphite carbon coated negative electrode material, preparation method thereof and lithium ion battery | |
CN103490055A (en) | Preparation method of nickel cobalt lithium manganate composite anode material | |
CN104979541A (en) | Lithium titanate composite material and preparation method thereof | |
CN107845801A (en) | A kind of fluorophosphoric acid cobalt lithium anode material of modified synergic and preparation method thereof | |
CN101150191A (en) | Anode material lanthanum or Ac adulterated LiFePO4 of lithium ion secondary battery and its making method | |
CN112467139A (en) | Lithium ion battery positive electrode pre-lithiation agent and preparation method and application thereof | |
CN111463419A (en) | Silicon-based @ titanium niobium oxide core-shell structure anode material and preparation method thereof | |
CN115911326A (en) | Low-expansion and long-service-life silicon-carbon composite material and preparation method thereof | |
CN114628684B (en) | High-energy-density quick-charging graphite composite material and preparation method thereof | |
CN114388738B (en) | Silicon-based anode material and preparation method and application thereof | |
CN113060715B (en) | Method for synthesizing lithium ferric manganese phosphate cathode material | |
CN109935808A (en) | A method of silicon-carbon cathode material is prepared based on micron silicon wafer | |
CN113066988A (en) | Negative pole piece and preparation method and application thereof | |
CN117317190A (en) | Lithium tantalate coated lithium manganese iron phosphate positive electrode material and preparation method thereof | |
CN105098155A (en) | Silicon dioxide-coated fluorinated lithium cobalt phosphate and preparation method thereof | |
CN107123802A (en) | A kind of preparation method of graphene modified phosphate iron lithium material | |
CN115626637B (en) | Preparation method of carbon/graphene/lithium titanate composite anode material | |
CN112242502A (en) | Positive electrode material, modification method thereof and battery | |
CN114497481B (en) | Conductive polymer coated nano silicon powder, preparation method and application thereof, and silicon-carbon negative electrode material | |
CN114628652B (en) | Long-cycle quick-charging SiO graphite composite anode material and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190625 |