CN109921282A - 一种soi混合集成激光器及其制备方法 - Google Patents
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114552366A (zh) * | 2022-01-14 | 2022-05-27 | 香港中文大学(深圳) | 一种soi基单片集成半导体激光器及其制作方法 |
CN115167014A (zh) * | 2022-09-02 | 2022-10-11 | 之江实验室 | 一种基于二氧化钒超材料结构的c波段硅基调制器 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114552366A (zh) * | 2022-01-14 | 2022-05-27 | 香港中文大学(深圳) | 一种soi基单片集成半导体激光器及其制作方法 |
CN114552366B (zh) * | 2022-01-14 | 2023-02-03 | 香港中文大学(深圳) | 一种soi基单片集成半导体激光器及其制作方法 |
CN115167014A (zh) * | 2022-09-02 | 2022-10-11 | 之江实验室 | 一种基于二氧化钒超材料结构的c波段硅基调制器 |
CN115167014B (zh) * | 2022-09-02 | 2022-11-22 | 之江实验室 | 一种基于二氧化钒超材料结构的c波段硅基调制器 |
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