CN109920881A - A kind of preparation method of at least one of indium gallium aluminium doped zinc sulphide solar battery buffer layer thin film - Google Patents
A kind of preparation method of at least one of indium gallium aluminium doped zinc sulphide solar battery buffer layer thin film Download PDFInfo
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- CN109920881A CN109920881A CN201910210408.4A CN201910210408A CN109920881A CN 109920881 A CN109920881 A CN 109920881A CN 201910210408 A CN201910210408 A CN 201910210408A CN 109920881 A CN109920881 A CN 109920881A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of preparation methods of at least one of indium gallium aluminium doped zinc sulphide solar battery buffer layer thin film material.First by the metal salt of zinc, the metal salt and tartaric acid distilled water of at least one of III race's element indium gallium aluminium are dissolved and are stirred evenly, sequentially add sodium citrate, thiocarbamide and gallium chloride, with the pH value of ammonium hydroxide tune solution, clean substrate of glass is inserted perpendicularly into deposition solution again, performed thin film is obtained after carrying out water bath with thermostatic control deposition under magnetic stirring, then presses vulcanization annealing in specific sulfur vapor, successfully prepares at least one of indium gallium aluminium of high quality doping ZnS thin-film material.The optical absorption edge of at least one of indium gallium aluminium prepared by the present invention doping ZnS film has apparent red shift compared with pure phase ZnS, and forbidden bandwidth reduces, and carrier concentration increases, film quality is good, surfacing, even compact, homogeneous grain size is good with the adhesion of substrate.Preparation method is simple, environmentally protective, and repeatability is high.
Description
Technical field
The present invention relates to optoelectronic thin film materials, in particular at least one of III race's element indium gallium aluminium doped zinc sulphide too
The preparation method of positive energy battery buffer layer membrane materials.
Background technique
In recent years, energy shortage and getting worse for environmental pollution this two large problems have promoted people to make great efforts to go to develop new energy
Source.Wherein solar energy the features such as not limited by geographical location with it, is inexhaustible, is nexhaustible become ideal new energy it
One.Most to solar energy research and utilization at present is exactly solar battery, therefore can be by reinforcing grinding solar battery
Study carefully, develop and utilize to solve the problems, such as energy shortage.Now, silicon systems solar cell application is extensive, but because its production cost compared with
Height, preparation process is complicated and is difficult to widely popularize.It is next that this just promotes people to strive to find a kind of cheap solar cell material
Instead of silicon.Wherein thin-film solar cells is because of its high conversion rate, and at low cost, steady performance has become a hot topic of research it
One.And laboratory has obtained copper indium gallium selenide (CIGS) thin-film solar cells that conversion ratio is 21.7% at present.
The structure of thin-film solar cells is successively substrate, Mo metal electrode, absorbed layer, buffer layer, window from the bottom up
Layer, Al metal electrode.For buffer layer between Window layer and absorbed layer, it has high optical transmittance, and has protection
Combined area and absorbed layer avoid bypass leakage, optimization PN junction energy-structure, modification from absorbing layer surface, reduce Window layer and absorption
The effects of forbidden band discontinuity of interlayer, to improve the transformation efficiency of battery.CIGS CdS used for solar batteries delays at present
Layer is rushed, but the forbidden bandwidth of CdS only has 2.4eV, limits the short wave response of battery obsorbing layer, makes CdS/CIGS solar energy
The quantum efficiency of battery declines in short wave ranges.And the Cd element in CdS is toxic heavy metal, contains Cd in production process
The loss of Cd in the discharge of waste water and waste battery, can all pollute the environment.Therefore, the exploitation of no cadmium buffer layer at
For hot spot.ZnS is II~VI race broad stopband directly band based semiconductor compound.The cubic phase ZnS of chemical bath deposition preparation
The band gap (3.6~3.7eV) of material is more wider than the CdS (2.4eV) prepared with same method, and the blue light of battery can be improved
Response and short-circuit current density, and have higher transmitance in visible-range, it is similar with Window layer ZnO material, has
It is also pollution-free to environment conducive to the formation of P- N structure, make the substitute of ideal CdS.But pure ZnS is also deposited
In some shortcomings, such as: its light wave that can be excited is limited in scope, self-resistance height etc..By the study found that doping vario-property
The comprehensive performance of ZnS material can be improved.In various doped chemicals, In/Ga/Al displacement+divalent Zn Shi Huizeng of+trivalent
Add a free electron, to realize the n-type doping of ZnS, improves carrier concentration.Based on CIGS/ZnS hetero-junctions too
It is positive can to widen width of the depletion layer in CIGS in battery device, increase the light induced electron number that interface is flowed through, to improve
Short circuit current.Conduction band bottom can be reduced after In/Ga/Al doping simultaneously, reduces forbidden bandwidth, is conducive to increase electron affinity, subtract
Height of the small interface the CIGS/ZnS conduction band with rank spike is conducive to the light induced electron stream passed through interface.The present invention uses equipment
Simply, low in cost, the chemical thought method that the film of even compact can be obtained under low temperature prepares III race element In/
Ga/Al doped zinc sulphide solar battery buffer layer thin film material.When can be by control solution concentration, mixing speed, deposition
Between, the technological parameters such as pH value, depositing temperature, frequency of depositing be accurately controlled the ingredient, thickness, crystal structure, surface shape of film
Looks and optical characteristics etc..
Summary of the invention
It is an object of the invention to for the interface CIGS/ZnS depletion layer thickness and conduction band band in CIGS solar battery
The adjusting method of rank spike height provides a kind of at least one of III race's element indium gallium aluminium of chemical bath deposition preparation
The method of doped zinc sulphide solar battery buffer layer thin film material.First by the metal salt of zinc, in III race's element indium gallium aluminium extremely
Few a kind of metal salt and tartaric acid distilled water are dissolved and are stirred evenly, and sequentially add sodium citrate, thiocarbamide and chlorination
Gallium adjusts the pH value of solution with ammonium hydroxide, and clean substrate of glass is then inserted perpendicularly into deposition liquid, is carried out under magnetic stirring
Performed thin film is obtained after water bath with thermostatic control deposition, then performed thin film is subjected to vulcanization annealing, successfully prepares the indium gallium aluminium of high quality
At least one of doping ZnS thin-film material.The optics of at least one of indium gallium aluminium prepared by the present invention doping ZnS film
ABSORPTION EDGE has apparent red shift compared with pure phase ZnS, and forbidden bandwidth reduces, and carrier concentration increases, and film quality is good, surfacing,
Even compact, homogeneous grain size are good with the adhesion of substrate.Preparation method is simple, environmentally protective, and repeatability is high.
The present invention can be achieved through the following technical solutions:
A kind of preparation method of at least one of indium gallium aluminium doped zinc sulphide solar battery buffer layer thin film, comprising with
Lower step:
(1) metal salt of zinc and tartaric acid are mixed, distilled water is added and stirred evenly；
(2) it is subsequently added into sodium citrate, stirring dissolves it sufficiently；
(3) metal salt of at least one of thiocarbamide and III race's element indium gallium aluminium is added, stirring is dissolved it sufficiently, obtained
To water-bath deposition solution；
(4) it is molten to be inserted perpendicularly into deposition obtained by step (3) by the pH that solution is adjusted with concentrated ammonia liquor for the simple glass substrate of preheating
Liquid carries out constant temperature water bath deposition under agitation；
(5) after depositing, substrate of glass is taken out, first distilled water flushing (2~5 times) is used, then dried up with high pure nitrogen, obtains
Obtain performed thin film；
(6) performed thin film prepared in step (5) is placed in sulfur vapor pressure to anneal, then naturally cools to room
Temperature finally prepares at least one of III race's element indium gallium aluminium of high quality doped zinc sulphide film.
Further, in step (4), bath temperature is 70~90 DEG C, and mixing speed is 180~540rpm, sedimentation time
For 60~120min.
Further, in step (4), concentrated ammonia liquor adjusts pH to 9.9~10.1.
Further, in step (6), sulfur vapor pressure is 2 × 103~6 × 103Pa, annealing temperature are 400~500 DEG C, are moved back
The fiery time is 60~120min.
The addition sequence of the drug is successively: metal salt, tartaric acid, sodium citrate, thiocarbamide and the III race's element of zinc
The metal salt of at least one of indium gallium aluminium.
Further, in the water-bath deposition solution, the metal salt of zinc used, tartaric acid, sodium citrate, thiocarbamide,
The concentration of the metal salt of at least one of III race's element indium gallium aluminium be respectively 0.021~0.09mol/L, 0.016~
0.053mol/L, 0.014~0.05mol/L, 0.022~0.091mol/L, 0.001~0.005mol/L.
The doping of at least one of III race's element indium gallium aluminium is 1at.%~9at.% of ZnS.
The simple glass substrate is successively using deionized water, acetone, ethyl alcohol, 10~15min of ultrasonic cleaning using preceding,
And it must also finally use 10~15min of deionized water ultrasonic cleaning.
The reagent that the present invention participates in reaction is that analysis is pure, commercially available.
For structure, pattern, ingredient and the optical property for studying prepared material, X is carried out to prepared sample and has been penetrated
Line diffraction analysis (XRD), scanning electron microscope analysis (SEM), energy dispersion X-ray spectrum analysis (EDS), it is ultraviolet-can
Light-exposed (UV-Vis) absorption spectroanalysis and Mo Te-Schottky curve test.
Beneficial effects of the present invention:
Resulting materials function admirable of the present invention.Compared with pure zinc sulfide film, by III race's element indium gallium aluminium of+trivalent
At least one doping, doped chemical can in displacement zinc sulfide film part+divalent Zn, increase the dense of carrier electrons
Degree realizes n-type doping, in the solar cell device that CIGS/ZnS is hetero-junctions, makes depletion layer in the thickness of the side CIGS
Increase, so as to increase the photogenerated current of CIGS depletion layer, increases photoproduction total current, improve the short circuit current of battery.Separately
The adjustable conduction band bottom for reducing ZnS of the outer doping by least one of III race's element indium gallium aluminium, it is affine to increase its electronics
Gesture improves the photogenerated current for passing through interface to reduce spike height of the conduction band with rank of the interface CIGS/ZnS.
The present invention passes through the method for making annealing treatment prefabricated membrane in the pressure of specific sulfur vapor after first chemical thought,
It is successfully realized the preparation of at least one of III race's element indium gallium aluminium doped zinc sulphide film, prepared thin-film material knot
Crystalline substance is good, grain size is uniform, surface topography is fine and close smooth, and the success of at least one of III race's element indium gallium aluminium is mixed
Enter, on the one hand improve carrier concentration, on the other hand significantly improve the optical transmittance etc. of zinc sulfide film, has and answer
Potential quality in thin-film solar cells device, while this method is with simple process, at low cost, environmentally friendly, repeatability is high
Advantage.
Detailed description of the invention
Fig. 1 is the XRD diagram of Ga doped zinc sulphide film made from embodiment 1；
Fig. 2 is the SEM figure of Ga doped zinc sulphide film made from embodiment 1；
Fig. 3 is the EDS figure of Ga doped zinc sulphide film made from embodiment 1；
Fig. 4 is the UV, visible light transmitted spectrum of Ga doped zinc sulphide film made from embodiment 1；
Fig. 5 is Mo Te-Schottky figure of Ga doped zinc sulphide film made from embodiment 1.
Specific embodiment
In order to better understand the present invention, below with reference to the embodiment content that the present invention is furture elucidated, but it is of the invention
Content is not limited solely to the following examples.
Embodiment 1
A kind of preparation method of Ga doped zinc sulphide solar battery buffer layer thin film, comprising the following steps:
(1) experiment simple glass substrate used is used into deionized water, acetone, ethyl alcohol, deionized water respectively, each ultrasound is clear
Wash 15min；
(2) by zinc acetate and tartaric acid, 5:6 is mixed in molar ratio, and 15mL distilled water is added and is stirring evenly and then adding into
0.1553g sodium citrate is subsequently added into thiourea solution 20mL and the 0.009g gallium chloride of 0.0625mol/L, stirs 20min；
(3) with concentrated ammonia liquor tune solution to pH=10 or so in draught cupboard, the substrate of glass cleaned in step (1) is vertical
Inserting step (2) prepared deposition solution, under conditions of 80 DEG C of bath temperature of holding, mixing speed 180rpm, constant temperature is heavy
Product 120min；
(4) after depositing, the substrate of glass in step (3) is taken out, first uses distilled water flushing (3 times), then with high-purity
It is dried with nitrogen, obtains performed thin film；
(5) performed thin film prepared in step (4) is placed in 6.0 × 103The sulfur vapor of Pa is depressed, 500 DEG C of annealing
60min after the completion of annealing, sample speed is taken out, is cooled to room temperature in air, finally prepares the Ga doping sulphur of high quality
Change zinc film.
The characterization result of sample is as follows in the present embodiment:
Fig. 1 is the XRD characterization of sample prepared by embodiment 1 as a result, corresponding cube of the position of each characteristic peak of sample is dodged
(111), (220) and (311) crystal plane direction of zinc ore ZnS, built-in partial enlarged view show the feature of (111) crystal plane direction
Peak deviates to the right compared with ZnS standard card map (JCPDS#65-9585), this is because Ga3+Ionic radius be less than Zn2+Ion
Ionic radius, when the Ga atom displacement Zn atomic time, the lattice constant that will lead to ZnS crystal becomes smaller, to make X-ray feature
Diffraction maximum is deviated to wide-angle direction, and without others diffraction miscellaneous peak in XRD spectrum, illustrates that prepared sample is pure phase
Ga adulterate ZnS thin-film material.
Fig. 2 is the SEM spectrum of sample prepared by embodiment 1, it can be seen from the figure that prepared ZnS film is by ball
Shape particle composition, and even particle size, film coverage is preferable, and film surface is smooth.
Fig. 3 be embodiment 1 prepare sample EDS map, it can be seen from the figure that in prepared film only have zinc,
Gallium and element sulphur exist, and do not have other impurities element, this is consistent with XRD test result.
Fig. 4 is the UV, visible light transmitted light spectrogram of Ga doped zinc sulphide film made from embodiment 1, can from figure
Out, compare and find with undoped ZnS film: optical transmittance of the ZnS film of Ga doping within the scope of 300-800nm reaches
To 92% or so, hence it is evident that be higher than undoped.The forbidden bandwidth of ZnS thin-film material after doping is 3.44eV, purer ZnS
Forbidden bandwidth it is small.
Fig. 5 is Mo Te-Schottky figure of Ga doped zinc sulphide film made from embodiment 1, uses 0.5mol/L in test
K2SO4Solution carries out at room temperature as electrolyte, and the range for scanning potential is -0.8 to+0.8V, and the working frequency of test is
1000Hz.In Mo Te-Schottky figure, Preventing cough EFBIt can be obtained by the intersection point potential of test curve and horizontal axis.In figure
Show Mo Te-Schottky curve of non-impurity-doped pure phase ZnS and Ga doping ZnS film.It can obviously observe the slope of curve all
For positive number, show that film is all P-type semiconductor.By the intercept of curve and horizontal axis, available non-impurity-doped pure phase ZnS and Ga
The Preventing cough of doping doping ZnS film is respectively -0.55V and -0.33V, and carrier concentration is respectively 2.77 × 1017cm-3,
3.53×1017cm-3.Preventing cough is shuffled after comparative analysis can be seen that Ga doping, and the forbidden band gone out in conjunction with absorption spectroanalysis is wide
Reduced result is spent it can be concluded that fermi level and conduction band bottom distance reduce, so that carrier concentration increases.
Embodiment 2
A kind of preparation method of In doped zinc sulphide solar battery buffer layer thin film, comprising the following steps:
(1) experiment simple glass substrate used is used into deionized water, acetone, ethyl alcohol, deionized water respectively, each ultrasound is clear
Wash 15min；
(2) by zinc acetate and tartaric acid, 5:6 is mixed in molar ratio, and 15mL distilled water is added and is stirring evenly and then adding into
0.1553g sodium citrate is subsequently added into thiourea solution 20mL and the 0.0203g inidum chloride of 0.0625mol/L, stirs 20min；
(3) with concentrated ammonia liquor tune solution to pH=10 or so in draught cupboard, the substrate of glass cleaned in step (1) is vertical
Inserting step (2) prepared deposition solution, under conditions of 80 DEG C of bath temperature of holding, mixing speed 180rpm, constant temperature is heavy
Product 120min；
(4) after depositing, the substrate of glass in step (3) is taken out, is first used distilled water flushing 3 times, then use High Purity Nitrogen
Air-blowing is dry, obtains performed thin film；
(5) performed thin film prepared in step (4) is placed in 6.0 × 103The sulfur vapor of Pa is depressed, 500 DEG C of annealing
60min after the completion of annealing, sample speed is taken out, is cooled to room temperature in air, finally prepares the indium doping sulphur of high quality
Change zinc film.
Embodiment 3
A kind of preparation method of Al doped zinc sulphide solar battery buffer layer thin film, comprising the following steps:
(1) experiment simple glass substrate used is used into deionized water, acetone, ethyl alcohol, deionized water respectively, each ultrasound is clear
Wash 15min；
(2) by zinc acetate and tartaric acid, 5:6 is mixed in molar ratio, and 15mL distilled water is added and is stirring evenly and then adding into
0.1553g sodium citrate is subsequently added into thiourea solution 20mL and the 0.009g aluminium chloride of 0.0625mol/L, stirs 20min；
(3) with concentrated ammonia liquor tune solution to pH=10 or so in draught cupboard, the substrate of glass cleaned in step (1) is vertical
Inserting step (2) prepared deposition solution, under conditions of 80 DEG C of bath temperature of holding, mixing speed 180rpm, constant temperature is heavy
Product 120min；
(4) after depositing, the substrate of glass in step (3) is taken out, is first used distilled water flushing 3 times, then use High Purity Nitrogen
Air-blowing is dry, obtains performed thin film；
(5) performed thin film prepared in step (4) is placed in 4.0 × 103The sulfur vapor of Pa is depressed, 500 DEG C of annealing
60min after the completion of annealing, sample speed is taken out, is cooled to room temperature in air, finally prepares the aluminium doping sulphur of high quality
Change zinc film.
Embodiment 4
A kind of preparation method of Ga doped zinc sulphide solar battery buffer layer thin film, comprising the following steps:
(1) experiment simple glass substrate used is used into deionized water, acetone, ethyl alcohol, deionized water respectively, each ultrasound is clear
Wash 15min；
(2) by zinc acetate and tartaric acid, 5:6 is mixed in molar ratio, and 15mL distilled water is added and is stirring evenly and then adding into
0.1553g sodium citrate is subsequently added into thiourea solution 20mL and the 0.009g gallium chloride of 0.0625mol/L, stirs 20min；
(3) with concentrated ammonia liquor tune solution to pH=10 or so in draught cupboard, the substrate of glass cleaned in step (1) is vertical
Inserting step (2) prepared deposition solution, under conditions of 80 DEG C of bath temperature of holding, mixing speed 180rpm, constant temperature is heavy
Product 120min；
(4) after depositing, the substrate of glass in step (3) is taken out, is first used distilled water flushing 3 times, then use High Purity Nitrogen
Air-blowing is dry, obtains performed thin film；
(5) performed thin film prepared in step (4) is placed in 6.0 × 103The sulfur vapor of Pa is depressed, 400 DEG C of annealing
60min after the completion of annealing, sample speed is taken out, is cooled to room temperature in air, finally prepares the Ga doping sulphur of high quality
Change zinc film.
Embodiment 5
A kind of preparation method of Ga doped zinc sulphide solar battery buffer layer thin film, comprising the following steps:
(1) experiment simple glass substrate used is used into deionized water, acetone, ethyl alcohol, deionized water respectively, each ultrasound is clear
Wash 15min；
(2) by zinc acetate and tartaric acid, 5:6 is mixed in molar ratio, and 15mL distilled water is added and is stirring evenly and then adding into
0.1553g sodium citrate is subsequently added into thiourea solution 20mL and the 0.009g gallium chloride of 0.0625mol/L, stirs 20min；
(3) with concentrated ammonia liquor tune solution to pH=10 or so in draught cupboard, the substrate of glass cleaned in step (1) is vertical
Inserting step (2) prepared deposition solution, under conditions of 70 DEG C of bath temperature of holding, mixing speed 200rpm, constant temperature is heavy
Product 120min；
(4) after depositing, the substrate of glass in step (3) is taken out, is first used distilled water flushing 3 times, then use High Purity Nitrogen
Air-blowing is dry, obtains performed thin film；
(5) performed thin film prepared in step (4) is placed in 6.0 × 103The sulfur vapor of Pa is depressed, 500 DEG C of annealing
60min after the completion of annealing, sample speed is taken out, is cooled to room temperature in air, finally prepares the Ga doping sulphur of high quality
Change zinc film.
Claims (7)
1. a kind of preparation method of at least one of indium gallium aluminium doped zinc sulphide solar battery buffer layer thin film, feature exist
In comprising the steps of:
(1) metal salt of zinc and tartaric acid are mixed, distilled water is added and stirred evenly；
(2) it is subsequently added into sodium citrate, stirring dissolves it sufficiently；
(3) metal salt of at least one of thiocarbamide and III race's element indium gallium aluminium is added, stirring dissolves it sufficiently, obtains water
Bathe deposition solution；
(4) the simple glass substrate of preheating is inserted perpendicularly into deposition solution obtained by step (3) by the pH that solution is adjusted with concentrated ammonia liquor,
Constant temperature water bath deposition is carried out under agitation；
(5) after depositing, substrate of glass is taken out, first uses distilled water flushing, then dried up with high pure nitrogen, obtains performed thin film；
(6) performed thin film prepared in step (5) is placed in sulfur vapor pressure to anneal, then cooled to room temperature, most
At least one of III race's element indium gallium aluminium of high quality doped zinc sulphide film is prepared eventually.
2. the system of at least one of indium gallium aluminium according to claim 1 doped zinc sulphide solar battery buffer layer thin film
Preparation Method, it is characterised in that: in the water-bath deposition solution, metal salt, tartaric acid, sodium citrate, the thiocarbamide, III of zinc used
The concentration of the metal salt of at least one of race's element indium gallium aluminium is respectively 0.021~0.09mol/L, 0.016~0.053mol/
L, 0.014~0.05mol/L, 0.022~0.091mol/L, 0.001~0.005mol/L.
3. the system of at least one of indium gallium aluminium according to claim 1 doped zinc sulphide solar battery buffer layer thin film
Preparation Method, it is characterised in that: in step (4), concentrated ammonia liquor adjusts pH to 9.9~10.1.
4. the system of at least one of indium gallium aluminium according to claim 1 doped zinc sulphide solar battery buffer layer thin film
Preparation Method, it is characterised in that: in step (4), bath temperature is 70~90 DEG C, and mixing speed is 180~540rpm, sedimentation time
For 60~120min.
5. the system of at least one of indium gallium aluminium according to claim 1 doped zinc sulphide solar battery buffer layer thin film
Preparation Method, it is characterised in that: in step (6), sulfur vapor pressure is 2 × 103~6 × 103Pa, annealing temperature are 400~500 DEG C, are moved back
The fiery time is 60~120min.
6. the system of at least one of indium gallium aluminium according to claim 1 doped zinc sulphide solar battery buffer layer thin film
Preparation Method, it is characterised in that: the 1at.% that the doping of at least one of the III described race's element indium gallium aluminium is ZnS~
9at.%.
7. the system of at least one of indium gallium aluminium according to claim 1 doped zinc sulphide solar battery buffer layer thin film
Preparation Method, it is characterised in that: the substrate of glass is using preceding successively ultrasonic with deionized water, acetone, ethyl alcohol, deionized water
Clean each 10~15min.
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