CN109917512B - Silicon double-wire system with gain assistance - Google Patents
Silicon double-wire system with gain assistance Download PDFInfo
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- CN109917512B CN109917512B CN201910221469.0A CN201910221469A CN109917512B CN 109917512 B CN109917512 B CN 109917512B CN 201910221469 A CN201910221469 A CN 201910221469A CN 109917512 B CN109917512 B CN 109917512B
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Abstract
The present invention provides a silicon two wire system with gain assist, the system comprising: a silicon dioxide substrate layer; arranging silicon double-wire groups on the upper end face of the silicon dioxide substrate layer according to a preset arrangement period; and covering the surfaces of the silicon dioxide and the silicon double-line group with a silicon dioxide gain layer embedded with a gain material. The invention can couple the single crystal silicon wire and the gain material contained in the outer silicon dioxide layer, and the near field coupling can be generated between the two single crystal silicon wires, thereby greatly enhancing the near field, greatly reducing the width of the emission spectrum and the reflection spectrum and greatly increasing the peak value.
Description
Technical Field
The invention relates to the technical field of gain-assisted near field enhancement, in particular to a silicon double-wire system with gain assistance.
Background
Surface plasmon resonance formed by illuminated metals has been studied for many years and has applications in energy, medical, information storage, optical catalysis, and the like. However, metals have many inherent drawbacks, such as high loss, thermal effects, incompatibility with conventional silicon planar processes, etc., which greatly limit the application of metal-based surface plasmon resonance.
Therefore, nanostructures based on semiconductor materials have received attention from researchers in recent years. The silicon material-based nanospheres and the gain-assisted near field effect of the nano-microrods have been studied by researchers by using the method of changing the imaginary part of the dielectric constant, but the method is not well fit with the reality because the materials conforming to the dielectric constant are not necessary in reality, and the method has a limitation in practical application. And the semiconductor particles such as the single nano microspheres are still incompatible with the traditional silicon plane process, so that the large-scale manufacturing on the process may have certain difficulty. Therefore, designing a nanostructure which is compatible with a silicon planar process and has certain practicability in reality and can realize near-field enhancement is a problem to be solved in the field of gain-assisted near-field enhancement technology development and application.
Disclosure of Invention
The silicon double-wire system with the gain assistance, provided by the invention, can enable the single crystal silicon wires and the gain material contained in the outer silicon dioxide layer to generate coupling, and the two single crystal silicon wires can also generate near-field coupling, so that the near field is greatly enhanced, the line width of an emission spectrum and a reflection spectrum is greatly reduced, and the peak value is greatly increased.
In a first aspect, the present invention provides a silicon two wire system with gain assist, comprising:
a silicon dioxide substrate layer;
arranging silicon double-wire groups on the upper end face of the silicon dioxide substrate layer according to a preset arrangement period;
and covering the surfaces of the silicon dioxide and the silicon double-line group with a silicon dioxide gain layer embedded with a gain material.
Optionally, the silicon double line group is formed by arranging two single crystal silicon lines in parallel.
Optionally, the silicon doublet corresponding parameters correspond to emission spectra, reflection spectra, and near field requirements, wherein,
the silicon double-wire group parameters comprise the height of a single crystal silicon wire, the line width of the single crystal silicon wire and the distance between two single crystal silicon wires.
Optionally, the height of the single crystal silicon line ranges from 30nm to 400 nm.
Optionally, the line width of the single crystal silicon line is in a range of 30nm to 400 nm.
Optionally, the distance between the two monocrystalline silicon lines is in a range of 30nm-400 nm.
Optionally, the preset arrangement period a range is 0um < a ≦ 6 um.
Optionally, the parameters corresponding to the silica layer embedded with the gain material correspond to emission spectrum, reflection spectrum requirements, wherein,
the parameters corresponding to the silicon dioxide layer embedded with the gain material comprise thickness and gain material type.
Optionally, the thickness of the layer of silica embedded with gain material is in the range of 30nm to 400 nm.
Optionally, the gain material species comprise quantum dots, dye molecules, rare earth ions.
The silicon double-wire system with the gain assistance provided by the embodiment of the invention utilizes two infinitely long single crystal silicon wires which are not far away from each other on a silicon dioxide layer to form a silicon double-wire group, but the distance between the silicon double-wire group and the silicon double-wire group is very large, the silicon double-wire group is not influenced mutually, a silicon dioxide layer embedded with a gain material is covered above the single crystal silicon wires, the system not only can enable the single crystal silicon wires and the gain material contained in the outer silicon dioxide layer to generate coupling, but also can generate near-field coupling between the two single crystal silicon wires, so that the near field is greatly enhanced, the width of the emission spectrum and the width of the reflection spectrum are also greatly reduced, and the peak value is greatly increased.
Drawings
FIG. 1 is a schematic diagram of a silicon two wire system with gain assist according to an embodiment of the present invention;
FIG. 2 is a near field cross sectional schematic of a silicon two wire system with gain assist in accordance with an embodiment of the present invention;
FIG. 3 is an emission spectrum of a silicon two wire system with gain assist according to an embodiment of the present invention;
fig. 4 is a reflection spectrum of a silicon two-wire system with gain assist according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a silicon two-wire system with gain assist, as shown in fig. 1, the system includes:
silicon dioxide substrate layer (e.g. SiO in FIG. 1)2Shown);
arranging a silicon duplex group (shown as Si in figure 1) on the upper end face of the silicon dioxide substrate layer according to a preset arrangement period (shown as A in figure 1);
the surfaces of the silicon dioxide and the silicon double line groups are covered with a silicon dioxide gain layer embedded with a gain material (shown as OG in fig. 1).
The silicon double-wire system with the gain assistance provided by the embodiment of the invention mainly utilizes two infinitely-long single crystal silicon wires which are arranged on a silicon dioxide layer and are not far away from each other to form a silicon double-wire group, but the distance between the silicon double-wire group and the silicon double-wire group is very large, the silicon double-wire group is not influenced mutually, a silicon dioxide layer embedded with a gain material is covered above the single crystal silicon wires, the system not only can enable the single crystal silicon wires and the gain material contained in the outer silicon dioxide layer to generate coupling, but also can generate near-field coupling between the two single crystal silicon wires, so that the near field is greatly enhanced, the width of the emission spectrum and the width of the reflection spectrum are also greatly reduced, and the peak value is greatly increased.
Secondly, the system can greatly enhance the near field in the excitation wavelength of the gain material; on one hand, the system is integrated on the plane of the silicon dioxide substrate layer, has a plane structure, is simple in structure, is compatible with the traditional silicon plane process, and can be processed and manufactured by the traditional silicon plane process. On the other hand, the system can also utilize the parameters of the four-energy-level two-particle beam model of the existing gain material to simulate and calculate the system, and the system has practical applicability because the system has actual materials as the basis.
Optionally, the silicon double line group is formed by arranging two single crystal silicon lines in parallel, wherein,
the two single crystal silicon wires arranged in parallel can be regarded as being closely spaced and infinitely long.
Optionally, the silicon doublet corresponding parameters correspond to emission spectra, reflection spectra, and near field requirements, wherein,
the silicon double-wire group parameters comprise the height of a single crystal silicon wire, the line width of the single crystal silicon wire and the distance between two single crystal silicon wires.
Optionally, the height of the single crystal silicon line ranges from 30nm to 400 nm.
Optionally, the line width of the single crystal silicon line is in a range of 30nm to 400 nm.
Optionally, the distance between the two monocrystalline silicon lines is in a range of 30nm-400 nm.
Optionally, the preset arrangement period a range is 0um < a ≦ 6 um.
Optionally, the parameters corresponding to the silica layer embedded with the gain material correspond to emission spectrum, reflection spectrum requirements, wherein,
the parameters corresponding to the silicon dioxide layer embedded with the gain material comprise thickness and gain material type.
Optionally, the thickness of the layer of silica embedded with gain material is in the range of 30nm to 400 nm.
Optionally, the gain material species comprise quantum dots, dye molecules, rare earth ions.
For example, the following test results are obtained by performing simulation calculation on the structure by using a four-level-two particle beam model of a specific gain material and related parameters:
1. as shown in the near field cross-section of the system of fig. 2 at the coupling wavelength, the hot spot, i.e., the point where the energy is greatest, is concentrated in the gap between the two single crystal silicon lines in the silicon twin line system and is much stronger than the single crystal silicon line, which is sufficient to illustrate that the coupling occurs between the single crystal silicon line and the gain material in the silicon dioxide gain layer, and between the single crystal silicon line and the single crystal silicon line.
2. As shown in the stimulated Emission spectrum (Emission spectrum) of the system shown in fig. 3, the incident mode is right above the structure, the incident wavelength is 495nm, an Emission peak is detected at 531nm, the line width of the Emission spectrum is 2.1nm, and the line width of the gain material is significantly reduced.
3. Similar to the emission spectrum, the reflection spectrum of the system shown in fig. 4 shows that the structure has a peak at 531nm at nanometer level.
In summary, according to the above test results, compared with the existing research, the gain-assisted near field enhancement of the system of this embodiment can form a strong coupling between the single crystal silicon line and the gain material doped in the silicon dioxide gain layer shell within the emission wavelength of the gain material, and also form a strong coupling between the single crystal silicon line and the single crystal silicon line, so that the near field intensity is greatly enhanced within the emission wavelength of the gain material. And at the moment, the line width of the spectral line of the emission spectrum and the reflected spectrum of the double-line system is greatly reduced, and the peak value is greatly increased.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A silicon two wire system with gain assist, comprising:
a silicon dioxide substrate layer;
arranging silicon double-wire groups on the upper end face of the silicon dioxide substrate layer according to a preset arrangement period;
and covering the surfaces of the silicon dioxide and the silicon double-line group with a silicon dioxide gain layer embedded with a gain material.
2. The system of claim 1, wherein the silicon twin wire set is two single crystal silicon wires arranged in parallel.
3. The system of claim 2, wherein the silicon doublet corresponding parameters correspond to an emission spectrum, a reflection spectrum, and near field requirements,
the silicon double-wire group parameters comprise the height of a single crystal silicon wire, the line width of the single crystal silicon wire and the distance between two single crystal silicon wires.
4. The system of claim 3, wherein the single crystal silicon line has a height in the range of 30nm to 400 nm.
5. The system of claim 3, wherein the single crystal silicon lines have a line width in a range of 30nm to 400 nm.
6. The system of claim 3, wherein the two single crystal silicon lines are spaced apart by a distance in a range of 30nm to 400 nm.
7. The system of any one of claims 1-6, wherein the predetermined arrangement period A is in a range of 0um < A ≦ 6 um.
8. The system of claim 7, wherein the parameters corresponding to the silica layer with embedded gain material correspond to emission spectrum and reflection spectrum requirements, wherein,
the parameters corresponding to the silicon dioxide layer embedded with the gain material comprise thickness and gain material type.
9. The system of claim 8, wherein the thickness of the layer of silicon dioxide embedded with the gain material is in the range of 30nm to 400 nm.
10. The system of claim 8, wherein the gain material species comprise quantum dots, dye molecules, rare earth ions.
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| CN104204880A (en) * | 2012-03-30 | 2014-12-10 | 富士通株式会社 | Optical element, light transmitting element, light receiving element, hybrid laser, and light transmitting apparatus |
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