CN109911950A - A kind of ruthenic acid strontium doping material that mixing iridium, preparation method and application - Google Patents
A kind of ruthenic acid strontium doping material that mixing iridium, preparation method and application Download PDFInfo
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- CN109911950A CN109911950A CN201910097596.4A CN201910097596A CN109911950A CN 109911950 A CN109911950 A CN 109911950A CN 201910097596 A CN201910097596 A CN 201910097596A CN 109911950 A CN109911950 A CN 109911950A
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- acid strontium
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Abstract
The invention discloses a kind of ruthenic acid strontium doping materials for mixing iridium, preparation method and application, and the ruthenic acid strontium doping material for mixing iridium is the oxide containing metallic element Sr, Ru, Ir, chemical formula SrRu0.7Ir0.3O3, there are antiferromagnetic and ferromagnetic domains, Sr and Ru are essential element, and Ir is doped chemical and part replaces the position of Ru to be doped, and Ir doping content is 30%, have exchange bias effect in temperature 10K.The ruthenic acid strontium doping material provided by the invention for mixing iridium, preparation method and application, the Spin Valve of existing multilayered structure can be substituted, it applies in magnetic storage field, the metal-insulator phase transformation that the ruthenic acid strontium doping material of iridium is mixed described in can also realizing by control temperature change, is applied in circuit switch preparation field.
Description
Technical field
The invention belongs to magnetic storage fields, and in particular to a kind of ruthenic acid strontium doping material for mixing iridium, preparation method and application.
Background technique
Ruthenic acid strontium (SrRuO3, write a Chinese character in simplified form SRO) and it is a kind of with three-dimensional, quadrature distortion perovskite structure transiting metal oxidation
Uniquely with the oxide of magnetic order in object and 4d element.Due to SRO have good chemical stability and with other calcium titaniums
Pit wood material structure matching and the electrode material for being widely used in oxide heterojunction.As the SRO of magnetic oxide, magnetics
Matter varies with temperature significantly, shows as paramagnetism at room temperature, and temperature shows as ferromagnetism when being lower than 160K.SRO belongs to strong pass
Join electron system, there are charge, spin, track, lattice it is interrelated, which has complicated ground state and physics abundant
Performance, thus the extensive concern by researchers such as physics, material, devices.The electromagnetic performance of SRO and the close phase of crystal structure
It closes, wherein Ruo6Octahedral inclination and rotation are the major ways of changes in crystal structure, therefore, commonly use other radiuses difference
Metal ion mixing change crystal structure, realize material electromagnetic performance regulation, can be applied to magnetic storage isospin electronics device
Part field.In addition, Doped ions self attributes can also have a certain impact to material properties.
Exchange bias effect refers to that under normal circumstances ferrimagnet and antiferromagnetic materials all only can be in its characteristic temperatures
Or less can just show corresponding magnetic property, when material internal exists simultaneously ferromagnetic interaction and antiferromagnetic interaction
When, material can show ferromagnetism or anti-ferromagnetism respectively within the scope of different temperature, or in a certain temperature range together
When there are ferromagnetic interaction or antiferromagnetic interactions.When the two occurs simultaneously, material internal will form ferromagnetic phase interaction
With with antiferromagnetic interaction region and the interface zone that contacts with each other of the two, when being cooled down to material and temperature
When dropping to Ne&1&el temperature or less, the anisotropy of inverse ferric magnetosphere is larger, does not change with outfield and changes, but ferromagnetic layer can be with outfield
Change and deflect, at this moment, interface inverse ferric magnetosphere can generate pinning effect to interface ferromagnetic layer, and ferromagnetic layer overcomes pinning to make
With deflecting, experimental phenomena caused by this process is exactly exchange bias effect.
Memory technology and computing technique and transmission technology together constitute the foundation stone of digital world.Storage performance is meter always
The bottleneck of calculation machine development, in the case where the urgent need that the calculating and transmission technology that performance is held a safe lead store high-performance pushes, with
The novel magnetic materials such as ruthenic acid strontium have become a hot topic of research as the magnetic storage technology of storage medium.
By the Spin Valve that gets of exchange bias effect development be both by ferromagnetic layer (free layer), non-magnetosphere, ferromagnetic layer and
Inverse ferric magnetosphere is constituted, and inverse ferric magnetosphere is when dropping to Ne&1&el temperature or less, antiferromagnetic magnetic moment ordered arrangement, due to ferromagnetic layer and anti-iron
Exchange-coupling interaction between magnetosphere is equivalent to ferromagnetic layer and is pinned, compared with free layer, the magnetization of the ferromagnetic layer tied
Direction is difficult to change, and at this moment we can change the magnetic direction of free layer by additional Weak magentic-field, make its with by anti-iron
The magnetic direction for the ferromagnetic layer that magnetosphere pinning is lived is in parallel and antiparallel state.When parallel, magnetic resistance is minimum, antiparallel
When, magnetic resistance is maximum, is equivalent to and forms a high-impedance state and a low resistance state to realize binary storage.Utilize exchange biased effect
The magnetic electron device answered is widely used in magnetic reading head and magnetic random storage (MRAM).Feelings of traditional memory technology in power-off
Under condition, the data stored originally will lose, because current main-stream stored digital field, generally passes through the unilateal conduction of diode
Property difference electric current with and without two states indicate computer capacity processing machine code 1 and 0, compared with traditional technology, magnetic
Storage has capacity big, low in energy consumption, information advantage not easy to lose.It will be appreciated, however, that the ferromagnetic layer in spin valve structure
With inverse ferric magnetosphere often there are two types of or multiple material form, occupy bigger space, increasingly minimized in memory device
It is detrimental to storage industry development today.
Summary of the invention
To solve problems of the prior art, it the invention discloses a kind of ruthenic acid strontium doping material for mixing iridium and answers
With can replace ferromagnetic layer and inverse ferric magnetosphere in conventional spin valve arrangement is the case where two or more different materials form, and is solved
The problem that memory capacity is small, data are easy to be lost existing for traditional memory technology, meanwhile, it can be used as the material for preparing intelligent switch
Material, solve when it is certain in special circumstances can not touching switch the case where.
To achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of ruthenic acid strontium doping material for mixing iridium, the ruthenic acid strontium doping material for mixing iridium are containing metallic element Sr, Ru, Ir
Oxide, chemical formula SrRu0.7Ir0.3O3, there are antiferromagnetic and ferromagnetic domains, Sr and Ru are essential element, and Ir is doping member
Element and part replaces the position of Ru to be doped, Ir doping content is 30%, has exchange bias effect in temperature 10K, can be with
Substitute the Spin Valve of existing multilayered structure.
Further, comprising the following steps:
Step 1: by SrCO3、RuO2With Ir powder by preparation 1g SrRu0.7Ir0.3O3 The ratio of sample
0.56g ± 0.005g:0.22g ± 0.005g:0.35g ± 0.005g is weighed, and is then put in agate mortar and is mixed and grind
1-1.5h is ground to being uniformly mixed, because Ru has volatility in hot conditions, in original proportional basis excessive 5%；
Step 2: uniformly mixed sample is placed in low temperature oven and is sintered, temperature control are as follows: risen to by the rate of 4-6 DEG C/min
It keeps for 24 hours, after being then cooled to 380-420 DEG C by the rate of 4-6 DEG C/min, being naturally cooling to room temperature after 980-1020 DEG C；
Step 3: taking out the processed sample of step 2, be put into agate mortar and regrind 40-60min；
Step 4: the sample regrind is put into high temperature furnace and is sintered, temperature control are as follows: heat up by the rate of 4-6 DEG C/min
It keeps for 24 hours, after being then cooled to 380-420 DEG C by the rate of 4-6 DEG C/min, being naturally cooling to room temperature after to 980-1200 DEG C；
Step 5: the processed sample of step 4 is put into agate mortar, bonding agent is added, mixing continues mortar 40-60min,
Then sample is put into and is pressed into preset disk in tablet press machine, after repeating step 4 operation, obtain sample prepared by the present invention.
Further, the bonding agent is polyvinyl alcohol.
Further, it applies in magnetic storage field.
Further, by mixing the metal-insulator phase transformation of the ruthenic acid strontium doping material of iridium described in control temperature change realization,
It applies in circuit switch preparation field.
Further, for phase transition temperature in 62K, there is metal-insulator phase transformation in the ruthenic acid strontium doping material for mixing iridium.
Further, a kind of ruthenic acid strontium doping material for mixing iridium, the SrRu that doped iridium concentration is 30%0.7Ir0.3O3Sample
Apparent left avertence occurs compared to the peak of pure ruthenic acid strontium (SRO), illustrates that iridium replaces the position of ruthenium to be doped into above-mentioned ruthenic acid strontium and mixes
In miscellaneous material, the ruthenic acid strontium doping material (SrRu of iridium is mixed0.7Ir0.3O3) test temperature be 10k when there is exchange biased phenomenon,
Exchange bias field is larger, can work under wider array of external magnetic field range, the SrRu with exchange bias effect0.7Ir0.3O3
Material can substitute the Spin Valve of existing multilayered structure, apply in magnetic storage field, SrRu0.7Ir0.3O3Have in material antiferromagnetic
Region and ferromagnetic domains.
Further, the ruthenic acid strontium doping material (SrRu of iridium is mixed0.7Ir0.3O3) in, doped iridium content is 30%, in phase transformation
Temperature has a metal-insulator phase transformation in 62K, mix iridium content be 0 when, material shows as metal in this section 10K-300k
Property, by control temperature change realize mix iridium ruthenic acid strontium doping material metal-insulator phase transformation, i.e., the closure of circuit switch and
It opens, can be used as the material for designing and preparing intelligent switch.
Compared with prior art, what the present invention reached has the beneficial effect that
The invention discloses a kind of ruthenic acid strontium doping materials for mixing iridium, preparation method and application, mix the ruthenic acid strontium doping material of iridium
For the oxide containing metallic element Sr, Ru, Ir, chemical formula SrRu0.7Ir0.3O3, have antiferromagnetic and ferromagnetic domains, Sr and
Ru is essential element, and Ir is doped chemical and part replaces the position of Ru to be doped, and Ir doping content is 30%, in temperature 10K
When have exchange bias effect.The ruthenic acid strontium doping material provided by the invention for mixing iridium, preparation method and application can substitute existing
There is the Spin Valve of multilayered structure, apply in magnetic storage field, additionally it is possible to by the ruthenic acid for mixing iridium described in control temperature change realization
The metal-insulator phase transformation of strontium doping material, is applied in circuit switch preparation field.
Detailed description of the invention
Fig. 1 is the X-ray energy spectrogram of Sr element of the invention, Ru element, Ir element and O element；
Fig. 2 is the XRD spectrum of the ruthenic acid strontium doping material for mixing iridium of the invention；
Fig. 3 is the SrRuO of no iridium doping of the invention3Curve of Magnetic Hysteresis Loop figure；
Fig. 4 is SrRu of the invention0.7Ir0.3O3MB tie up as model；
Fig. 5 is the structure chart of ferromagnetic layer and inverse ferric magnetosphere in existing spin valve structure；
Fig. 6 is SrRu of the invention0.7Ir0.3O3Schematic diagram of internal structure；
Resistivity-temperature profile that Fig. 7 is the content of doped iridium of the present invention (Ir) when being 0 and 30%.
Specific embodiment
The invention will be further described in the following with reference to the drawings and specific embodiments.Following embodiment is only used for clearer
Ground illustrates technical solution of the present invention, and not intended to limit the protection scope of the present invention.
As shown in figs. 1-7, a kind of ruthenic acid strontium doping material for mixing iridium, for the oxide containing metallic element Sr, Ru, Ir,
Chemical formula indicates are as follows: SrRu0.7Ir0.3O3, wherein using Sr and Ru as essential element, Ir is as doped chemical, Ir doping content
30%, each element accounting, i.e. oxygen member can see by the X-ray energy spectrogram of the O element of Fig. 1, Sr element, Ru element and Ir element
Plain (O) atomic percent is 63.15%, and strontium element (Ru) atomic percent is 18.78%, and ruthenium element (Ru) atomic percent is
12.91%, iridium (Ir) atomic percent is 5.17, mixes the XRD spectrum of the ruthenic acid strontium doping material of iridium as shown in Fig. 2, doping
The SrRu that iridium (Ir) concentration is 30%0.7Ir0.3O3Compared to the peak of pure ruthenic acid strontium (SRO) apparent left avertence occurs for sample, and root
According to bragg's formula: 2dsin θ=λ is it is found that when θ reduces, and the value of d is increasing, because of the atomic radius ratio Ru element of Ir element
Atomic radius it is big, so this illustrates SrRu0.7Ir0.3O3The content of middle Ir element improves, and further illustrates that iridium replaces the position of ruthenium
It sets and is doped into SrRu0.7Ir0.3O3In, wherein d is interplanar distance, and θ is incident ray, the included angle X between reflected ray and reflection crystal face
For wavelength.
According to Fig.3, by coercive field formula: Hc=The SrRuO adulterated without iridium can be obtained3The coercive of sample
Field is Hc=2765.8Oe, wherein H1It is the intersection point on the left of reference axis with X-axis, H2It is the intersection point on the right side of reference axis with X-axis, Hc is
Coercive field value.Mix the ruthenic acid strontium doping material (SrRu of iridium0.7Ir0.3O3) coercive field Hc=933.2Oe, hysteresis loop deviate considerably from
, there is exchange bias effect, by exchange bias field formula: H in originEB=Obtain SrRu0.7Ir0.3O3's
Exchange bias field HEB=820.8Oe, test temperature at this moment are 10k, wherein HEBIt is exchange bias field.In conjunction with existing BiFeO3
Sample, NiFe/FeMn sample exchange bias field it is found that BiFeO3Sample HEB=235Oe, NiFe/FeMn sample HEB=93Oe,
We have found that the exchange bias field for mixing the ruthenic acid strontium doping material of iridium is bigger, therefore can be under wider array of external magnetic field range
Work.Utilize exchange biased MB phenomenological model to study this phenomenon: as Fig. 4-1. shown in, the spin side of ferromagnetic domains at this moment
To identical as antiferromagnetic region spin direction, when with externally-applied magnetic field direction from just becoming negative, ferromagnetic spin no longer keeps original
Direction, but deflect, but for antiferromagnetic spin, original direction is still kept, it is 2. shown by Fig. 4-, this
When, antiferromagnetic reaction in a ferromagnetic upper microcosmic torque so that ferromagnetic direction with it is original identical, external magnetic field continues to increase
Can make spin be consistent, which results in hysteresis loop negative direction coercivity increase, as Fig. 4-3. shown in；When additional magnetic
Reduce when, due to it is antiferromagnetic spin still act on it is ferromagnetic so that ferromagnetic spin is easy to switch to and antiferromagnetic spin phase
With direction, the positive coercivity of corresponding hysteresis loop becomes smaller, as attached drawing 4- 4. shown in.It is combined at present certainly by this phenomenon
Ferromagnetic layer in spin valve structures occurs spin-exchange-coupled with inverse ferric magnetosphere and ferromagnetic layer is lived by inverse ferric magnetosphere pinning, to realize tune
It controls external magnetic field and realizes magnetic storage, the SrRu with exchange bias effect0.7Ir0.3O3Material can substitute existing multilayered structure
Spin Valve can be applied to magnetic storage field.Fig. 5 is ferromagnetic layer and inverse ferric magnetosphere structure chart in existing spin valve structure, is
Different materials composition, Fig. 6 show SrRu0.7Ir0.3O3There are antiferromagnetic region and ferromagnetic domains in material.
SrRu0.7Ir0.3O3In material, when the content for adulterating Ir is 30%, pass through resistivity-temperature profile of Fig. 7
It is found that there is a metal-insulator phase transformation during cooling, phase transition temperature is in 62K, and when the content for mixing Ir is 0, material exists
The section 10K-300k shows as metallicity, thus obtains, the SrRu that doped iridium content of the invention is 30%0.7Ir0.3O3Material energy
It is enough that metal-insulator phase transformation, the i.e. closure and unlatching of circuit switch are realized by control temperature change, it can be applied to design and prepare
Intelligent switch or circuit switch.
Embodiment 1
SrCO3、RuO2With Ir powder by preparation 1g SrRu0.7Ir0.3O3Ratio 0.56g: 0.22g of sample:
0.345g weigh, be then put in agate mortar mix and grind 1h to be uniformly mixed, because Ru hot conditions have volatility,
In original proportional basis excessive 5%.
Step 2: uniformly mixed sample is placed in low temperature oven and is sintered, temperature control are as follows: risen to by the rate of 5 DEG C/min
It keeps for 24 hours, after being then cooled to 400 DEG C by the rate of 6 DEG C/min, being naturally cooling to room temperature after 1000 DEG C.
Step 3: taking out the processed sample of step 2, be put into agate mortar and regrind 60min.
Step 4: the sample regrind is put into high temperature furnace and is sintered, temperature control are as follows: press the rate liter of 5 DEG C/min
Temperature after being then cooled to 400 DEG C by the rate of 6 DEG C/min, is naturally cooling to room temperature to keeping for 24 hours after 1200 DEG C.
Step 5: the processed sample of step 4 being put into agate mortar, bonding agent is added, mixing continues mortar
Then sample is put into and is pressed into preset disk in tablet press machine by 60min, after repeating step 4 operation, the ruthenic acid of iridium is mixed needed for obtaining
Strontium doping material.
Embodiment 2
SrCO3、RuO2With Ir powder by preparation 1g SrRu0.7Ir0.3O3Ratio 0.56g: 0.22g of sample:
0.35g weigh, be then put in agate mortar mix and grind 1h to be uniformly mixed, because Ru hot conditions have volatility,
In original proportional basis excessive 5%.
Step 2: uniformly mixed sample is placed in low temperature oven and is sintered, temperature control are as follows: risen to by the rate of 5 DEG C/min
It keeps for 24 hours, after being then cooled to 400 DEG C by the rate of 6 DEG C/min, being naturally cooling to room temperature after 1000 DEG C.
Step 3: taking out the processed sample of step 2, be put into agate mortar and regrind 60min.
Step 4: the sample regrind is put into high temperature furnace and is sintered, temperature control are as follows: press the rate liter of 5 DEG C/min
Temperature after being then cooled to 400 DEG C by the rate of 6 DEG C/min, is naturally cooling to room temperature to keeping for 24 hours after 1200 DEG C.
Step 5: the processed sample of step 4 being put into agate mortar, bonding agent is added, mixing continues mortar
Then sample is put into and is pressed into preset disk in tablet press machine by 60min, after repeating step 4 operation, the ruthenic acid strontium for obtaining mixing iridium is mixed
Miscellaneous material.
Embodiment 3
SrCO3、RuO2With Ir powder by preparation 1g SrRu0.7Ir0.3O3Ratio 0.56g: 0.22g of sample:
0.355g weigh, be then put in agate mortar mix and grind 1h to be uniformly mixed, because Ru hot conditions have volatility,
In original proportional basis excessive 5%.
Step 2: uniformly mixed sample is placed in low temperature oven and is sintered, temperature control are as follows: risen to by the rate of 5 DEG C/min
It keeps for 24 hours, after being then cooled to 400 DEG C by the rate of 6 DEG C/min, being naturally cooling to room temperature after 1000 DEG C.
Step 3: taking out the processed sample of step 2, be put into agate mortar and regrind 60min.
Step 4: the sample regrind is put into high temperature furnace and is sintered, temperature control are as follows: press the rate liter of 5 DEG C/min
Temperature after being then cooled to 400 DEG C by the rate of 6 DEG C/min, is naturally cooling to room temperature to keeping for 24 hours after 1200 DEG C.
Step 5: the processed sample of step 4 being put into agate mortar, bonding agent is added, mixing continues mortar
Then sample is put into and is pressed into preset disk in tablet press machine by 60min, after repeating step 4 operation, the ruthenic acid strontium for obtaining mixing iridium is mixed
Miscellaneous material.
The present invention is disclosed with preferred embodiment above, so it is not intended to limiting the invention, all to take equivalent replacement
Or the scheme technical solution obtained of equivalent transformation, it falls within the scope of protection of the present invention.
Claims (6)
1. a kind of ruthenic acid strontium doping material for mixing iridium, which is characterized in that the ruthenic acid strontium doping material for mixing iridium is to contain metal
The oxide of elements Sr, Ru, Ir, chemical formula SrRu0.7Ir0.3O3, there are antiferromagnetic and ferromagnetic domains, Sr and Ru are main member
Element, Ir is doped chemical and part replaces the position of Ru to be doped, and Ir doping content is 30%, has exchange in temperature 10K
Bias effect can substitute the Spin Valve of existing multilayered structure.
2. a kind of preparation method for the ruthenic acid strontium doping material for mixing iridium, which comprises the following steps:
Step 1: by SrCO3、RuO2With Ir powder by preparation 1g SrRu0.7Ir0.3O3 The ratio of sample
0.56g ± 0.005g:0.22g ± 0.005g:0.35g ± 0.005g is weighed, and is then put in agate mortar and is mixed and grind
1-1.5h is ground to being uniformly mixed, because Ru has volatility in hot conditions, in original proportional basis excessive 5%；
Step 2: uniformly mixed sample is placed in low temperature oven and is sintered, temperature control are as follows: risen to by the rate of 4-6 DEG C/min
It keeps for 24 hours, after being then cooled to 380-420 DEG C by the rate of 4-6 DEG C/min, being naturally cooling to room temperature after 980-1020 DEG C；
Step 3: taking out the processed sample of step 2, be put into agate mortar and regrind 40-60min；
Step 4: the sample regrind is put into high temperature furnace and is sintered, temperature control are as follows: heat up by the rate of 4-6 DEG C/min
It keeps for 24 hours, after being then cooled to 380-420 DEG C by the rate of 4-6 DEG C/min, being naturally cooling to room temperature after to 980-1200 DEG C；
Step 5: the processed sample of step 4 is put into agate mortar, bonding agent is added, mixing continues mortar 40-60min,
Then sample is put into and is pressed into preset disk in tablet press machine, after repeating step 4 operation, obtain sample prepared by the present invention.
3. a kind of preparation method of ruthenic acid strontium doping material for mixing iridium according to claim 2, which is characterized in that described viscous
Connecing agent is polyvinyl alcohol.
4. a kind of application of ruthenic acid strontium doping material for mixing iridium according to claim 1, which is characterized in that apply and deposited in magnetic
Storage field.
5. a kind of application of ruthenic acid strontium doping material for mixing iridium according to claim 1, which is characterized in that pass through control temperature
The metal-insulator phase transformation that the ruthenic acid strontium doping material of iridium is mixed described in degree variation realization, is applied in circuit switch preparation field.
6. a kind of application of ruthenic acid strontium doping material for mixing iridium according to claim 5, which is characterized in that phase transition temperature exists
When 62K, there is metal-insulator phase transformation in the ruthenic acid strontium doping material for mixing iridium.
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| CN114606510A (en) * | 2022-03-21 | 2022-06-10 | 吉林大学 | Layered iridium-based perovskite nanosheet catalyst, preparation method and application thereof in electrocatalytic oxygen evolution reaction |
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