CN109887532B - Write-in and erase method for fusion memory - Google Patents
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- CN109887532B CN109887532B CN201910083189.8A CN201910083189A CN109887532B CN 109887532 B CN109887532 B CN 109887532B CN 201910083189 A CN201910083189 A CN 201910083189A CN 109887532 B CN109887532 B CN 109887532B
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Abstract
The present disclosure provides a write and erase method of a fusion type memory. The writing method comprises the steps that the fusion memory comprises a plurality of memory units, and each memory unit is a bulk substrate; a channel region extending between the source, the drain and the source drain over the substrate, and a ferroelectric layer and a gate stacked on the channel region; the writing method comprises the following steps: applying a first voltage between the gate and the bulk of the at least one memory cell, the first voltage being less than a switching voltage at which a polarization switching of the ferroelectric layer occurs; the source and the drain are grounded or in a floating state, respectively. In the method, the forward first voltage can be controlled to realize data writing, compared with the existing DRAM, the retention time of more than 1000 seconds is achieved at 85 ℃, the speed is equivalent to that of the DRAM, and the retention characteristic is greatly superior to that of the DRAM in the prior art.
Description
Technical Field
The present disclosure relates to the field of memories, and further relates to a method for writing and/or erasing by using the converged memory.
Background
A conventional DRAM (dynamic random access memory) employs a memory cell structure of 1T1C (1Transistor-1 Capacitor), and when a word line connected to a gate of a Transistor is gated, the Transistor is gated, and bit information stored on the Capacitor can be read from a bit line; conventional NAND uses floating gates or charge trapping structures; one of the two memories is dynamic random access memory, and the other is nonvolatile memory, so that the two memories have large difference in preparation process and cannot be integrated in one chip on chip (SOC), so that the advantages of the two memories cannot be combined, and the storage capacity and the calculation performance of the SOC chip are limited.
In a neural network, the traditional synapse devices are realized by memristors at two ends or three-end transistors in an analog mode, the synapse devices are generally connected with each other by adopting a parallel NOR structure, and after weight training, the calculation is completed by adopting a current convergence mode. The structure has the problems of large operating current, large power consumption training power consumption and the like, so that the parallel number is limited.
Disclosure of Invention
Technical problem to be solved
In view of the above, the present disclosure provides a writing and erasing method for a merged memory, so as to merge the advantages of the two memories.
(II) technical scheme
According to an aspect of the present disclosure, there is provided a writing method of a converged memory including a plurality of memory cells, each memory cell bulk substrate; a channel region extending between the source, the drain and the source drain over the substrate, and a ferroelectric layer and a gate stacked on the channel region; the writing method comprises the following steps: applying a first voltage between the gate and the bulk of the at least one memory cell, the first voltage being less than a switching voltage at which a polarization switching of the ferroelectric layer occurs; the source and the drain are grounded or in a floating state, respectively.
In a further embodiment, the writing method further comprises: applying a second voltage between the gate and the bulk of the at least one memory cell, the second voltage being greater than a switching voltage at which a polarization switching of the ferroelectric layer occurs; and the source electrode is in a grounding state, and the gate electrode is in a positive voltage state.
In a further embodiment, the first voltage is positive, the first voltage being between 0.5V and 3V.
In a further embodiment, the second voltage is positive, the second voltage being between 3V and 10V.
In a further embodiment, the first voltage is applied by applying a positive first voltage to the gate to bring the bulk voltage to ground.
In a further embodiment, the second voltage is applied by applying a positive second voltage to the gate to bring the bulk voltage to ground.
In a further embodiment, the writing method further comprises: and adjusting the threshold voltage of the corresponding memory cell by adjusting the first voltage and/or changing the crystal lattice defect of the ferroelectric layer.
In a further embodiment, the writing method further comprises: the threshold voltage of the corresponding memory cell is adjusted by adjusting the second voltage and/or reversing the polarization.
In a further embodiment, the writing method further comprises: the read voltage is applied as the middle of the threshold voltage adjustment interval.
According to another aspect of the present disclosure, there is provided an erasing method for a converged memory including a plurality of memory cells, each memory cell bulk substrate; a channel region extending between the source, the drain and the source drain over the substrate, and a ferroelectric layer and a gate stacked on the channel region; the writing method comprises the following steps:
applying a third voltage between the gate and the bulk of the at least one memory cell, the third voltage having an absolute value less than a switching voltage at which a polarization switching of the ferroelectric layer occurs;
the source and the gate are grounded or in a floating state, respectively.
In a further embodiment, the erasing method further comprises: applying a fourth voltage between the gate and the bulk of the at least one memory cell, the fourth voltage having an absolute value greater than a switching voltage at which a polarization switching of the ferroelectric layer occurs; the source and the gate are grounded or in a floating state, respectively.
In a further embodiment, the third voltage is negative, the third voltage being between-1V to-3V.
In a further embodiment, the fourth voltage is negative, the fourth voltage being between-3V and-10V.
In a further embodiment, the third voltage is applied by applying a reverse voltage to the gate to bring the bulk voltage to ground.
In a further embodiment, the second voltage is applied by applying a reverse voltage to the gate to bring the bulk voltage to ground.
According to still another aspect of the present disclosure, there is also provided a processing method of a fusion type memory, including the above-described writing method and erasing method, and/or the above-described reading method.
(III) advantageous effects
Write side of the present disclosureMethod, by comparison with existing DRAMs, it goes through 1012The threshold voltage of the above circulation is still smaller than that of the traditional DRAM, the retention time is more than 1000 seconds at 85 ℃, the speed is equivalent to that of the DRAM, and the retention characteristic is greatly superior to that of the DRAM in the prior art.
The erasing method is completed in a high voltage area (larger than a switching voltage), the fourth voltage is applied to cause the domain of the iron battery to switch, the erasing voltage of the process is still smaller than that of the traditional FLASH, the speed is high, and the erasing speed can reach 20ns level.
The processing method disclosed by the invention comprises the writing and erasing steps, has the advantages of both DRAM and FLASH, and has a good application prospect.
Drawings
Fig. 1 is a schematic cross-sectional view of a memory cell in a fusion-type memory according to an embodiment of the disclosure.
FIG. 2 is a schematic cross-sectional view of a memory cell in another fusion-type memory of an embodiment of the disclosure.
Fig. 3 is a schematic cross-sectional view of a memory cell in yet another fusion-type memory according to an embodiment of the present disclosure.
Fig. 4 is a schematic diagram of a fused memory embodying the present disclosure.
FIG. 5 is a schematic diagram of a write method for a fusion memory according to an embodiment of the disclosure.
FIG. 6 is a schematic diagram of an erase method for a fusion memory according to an embodiment of the disclosure.
Fig. 7A, 7B and 7C are a voltage scan graph, a write-erase diagram and a read diagram respectively in the fusion memory charge trapping mode according to the embodiment of the disclosure.
Fig. 8A, 8B and 8C are schematic diagrams of a single-cycle operation, a multi-cycle operation, and a write-erase operation, respectively, in the ferroelectric flip mode of the fusion memory according to the embodiment of the disclosure.
FIGS. 9A-9C are schematic cross-sectional views of memory cells of three memories according to embodiments of the present disclosure.
Fig. 10 is a schematic diagram of a neural network computing device.
FIG. 11 is a schematic diagram of a neuron configuration.
Fig. 12 is a schematic diagram of a neural network computing system according to an embodiment of the disclosure.
FIG. 13 is a diagram of a memory unit in the neural network computing system of FIG. 12.
Fig. 14 is a block diagram of a neural network computing system according to an embodiment of the present disclosure.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings. Hereinafter, some examples will be provided to explain embodiments of the present disclosure in detail. The advantages and efficacy of the present disclosure will become more apparent from the following disclosure. The drawings attached hereto are simplified and provided as illustrations. The number, shape, and size of the components shown in the drawings may be modified depending on the actual situation, and the arrangement of the components may be more complicated. Other aspects of practice or use can be made in the present disclosure, and various changes and modifications can be made without departing from the spirit and scope defined in the present disclosure.
The terms "above", "below" and the like in the present disclosure, unless otherwise specified, refer to a semiconductor layer structure in a memory device being located on a directly contacting upper portion of another semiconductor layer structure, or a directly contacting lower portion, that is, when "above" or "below" is used for description, two semiconductor layers are in direct contact, for example, "ferroelectric layer, located above a channel region" means that the ferroelectric layer is located on a directly contacting upper portion of the channel region; the term "bulk" as referred to in this disclosure refers to a substrate or well material that may participate in the formation of one or more memory cells.
According to an aspect of the embodiments of the present disclosure, a fusion memory is provided, which includes a plurality of memory cells, each memory cell includes a ferroelectric layer, so that the memory cell can operate in a charge trapping mode and a polarization inversion mode.
Fig. 1 is a schematic cross-sectional view of a memory cell in a fusion-type memory according to an embodiment of the disclosure. A fusion-type memory is provided in fig. 1, and includes a plurality of memory cells 10, wherein the memory cells 10 include: a bulk substrate; a source and a drain over the bulk substrate and a channel region extending between the source and drain regions; a ferroelectric layer located over the channel region; and a gate electrode on the ferroelectric layer.
The memory cell in this embodiment includes a channel region and a ferroelectric layer thereon, which are in direct contact with each other, and the ferroelectric layer can operate in a charge trapping mode and a polarization inversion mode by adjusting the magnitude of a voltage applied to the gate.
The ferroelectric layer in fig. 1 uses the ferroelectric layer as a gate dielectric between the gate and the channel. The memory can operate in two modes: on one hand, a large number of lattice defects in the ferroelectric material are used for storing charges, so that the ferroelectric material can work in a charge trapping mode, and data is stored by trapping and releasing the charges; on the other hand, the device can also work in a ferroelectric flip mode and store data through polarization flip.
In some embodiments, the material of the ferroelectric layer may be doped HfOx，ZrOxPZT, BFO or BST, preferably HfOx(ii) a The doping species can be Si, Zr, Hf, Al, Y, Gd, La, Sr, Ti, and/or N, etc., and the preferred doping is Zr; the doping content is between 10 and 75 percent.
In some embodiments, the ferroelectric layer has a thickness of 3nm to 10 nm; the length of the channel is 5 nm-200 nm, and the width of the channel is 5 nm-500 nm.
In some embodiments, the bulk, source, drain and gate may be configured according to existing memory cell arrangements, and the corresponding fabrication processes may be performed with reference to existing process flows and participation.
In some embodiments, the fusion memory further comprises a control circuit, and a gate control sub-circuit connected to each memory cell for individually applying a specific first voltage to the gate to cause the ferroelectric layer under the gate to trap electrons during charging or dischargingThe threshold voltage is changed during the discharge. The control circuit alsoCan be integrated in the read-write circuit of the memoryAnd controlling the corresponding voltage pulse value in the read-write process. The read-write circuit writes the content into the accessed memory cell at a first voltage according to the read-write instruction of the CPU; or read information from the accessed memory cell. The absolute value of the first voltage should be smaller than the switching voltage value required for polarization reversal of the ferroelectric material in the ferroelectric layer, and as the first voltage rises, the more electrons are trapped in the ferroelectric layer, the threshold voltage of the memory cell will gradually rise.
In some embodiments, the control circuit is further configured to apply a specific second voltage to the gate individually to cause the gate charge to achieve a polarization reversal, and accordingly change the threshold voltage, which gradually decreases as the second voltage increases. The read-write circuit writes the content into the accessed storage unit at a second voltage according to the read-write instruction of the CPU; or read information from the accessed memory cell. The absolute value of the second voltage should be greater than the switching voltage required for polarization reversal of the ferroelectric material in the ferroelectric layer.
In some embodiments, the source and drain regions may be left floating or adjusted to corresponding states (positive voltage, negative voltage, or ground) according to the operating state of the memory (write, erase, or read) as required by the memory product. The specific adjustment method can be referred to the following embodiment of the writing method for the fusion memory.
In some embodiments, the control circuit can control the voltage applied to the gate to be the first voltage or the second voltage in a specific procedure, that is, two voltage modes can occur simultaneously in one process, which can exert the respective advantages of both the DRAM and the conventional flash.
In some embodiments, the fusion type memory of the embodiments of the present disclosure may use word line, bit line and source line architectures known in the art to arrange a memory cell array. The word lines are coupled to the gates of the respective memory cells, the bit lines are coupled to the respective memory cell drains, and the source lines are coupled to the respective Fe memory cell sources.
In some embodiments, the fusion memory of the embodiments of the disclosure further includes a readout circuit for reading out the information stored in each memory cell, which can be read out by applying a smaller readout voltage (e.g. 0.6V) in the polarization inversion or ferroelectric trap electron mode.
FIG. 2 is a schematic cross-sectional view of a memory cell in another fusion-type memory of an embodiment of the disclosure. A fusion-type memory is provided in fig. 2, which includes a plurality of memory cells 20, wherein the memory cells 20 include: a bulk substrate; a source and a drain over the bulk substrate and a channel region extending between the source and drain regions; a first interface layer located on the channel; a ferroelectric layer located on the first interface layer; and the grid is positioned on the ferroelectric layer.
The memory cell structure in this embodiment is substantially similar to that in fig. 1, except that a first interface layer is provided between the ferroelectric layer and the channel region. The first interface layer may be used to control the growth of the ferroelectric material, such as lattice orientation control or defect distribution.
In some embodiments, the material of the first interfacial layer may be SiO2，SiN，SiON，AlOx， TiO2Or HfOxPreferably, the first interface layer material may be SiO2(ii) a The thickness of the first interface layer can be 0.3 nm-3 nm; the material of the first interface layer is adjusted according to the ferroelectric layer material to be grown, for example, when the ferroelectric layer material is HfOxWhen the first interface layer material is SiON, the corresponding first interface layer material may be SiON; for example, when the ferroelectric layer material is SBT, the corresponding first interface layer material may be HfOxOr AlOx。
FIG. 3 is a schematic cross-sectional view of a memory cell in yet another fusion-type memory of an embodiment of the disclosure. A fusion-type memory is provided in fig. 3, which includes a plurality of memory cells 30, wherein the memory cells 30 include: a bulk substrate; a source and a drain over the bulk substrate and a channel region extending between the source and drain regions; a first interface layer located on the channel; a ferroelectric layer located on the first interface layer; a second interface layer located on the ferroelectric layer; and the grid electrode is positioned on the second interface layer.
The memory cell structure in this embodiment is substantially similar to that of fig. 1, except that a first interface layer is disposed between the ferroelectric layer and the channel region, and a second interface layer is disposed between the ferroelectric layer and the gate. The first interface layer may be used to control the growth of the ferroelectric material, such as lattice orientation control or defect distribution. The second interface layer is used for isolating mutual diffusion and interface damage between the metal gate and the storage layer.
In some embodiments, the material of the first interfacial layer may be SiO2，SiN，SiON，AlOx， TiO2，HfOxOr a combination thereof, the first interface layer material may preferably be SiO2(ii) a The thickness of the first interface layer can be 0.3 nm-3 nm; the material of the first interface layer is adjusted according to the ferroelectric layer material to be grown, for example, when the ferroelectric layer material is HfOxWhen the first interface layer material is SiON, the corresponding first interface layer material may be SiON; for example, when the ferroelectric layer material is SBT or PZT, the corresponding first interface layer material may be HfOxOr AlOx。
In some embodiments, the second interface layer material may be SiO2，SiN，SiON，AlOx， TiO2Or HfOx. Preferably, the second interface layer material may be AlOx(ii) a The thickness of the second interface layer can be 1 nm-10 nm; the material of the second interface layer is adjusted according to the ferroelectric layer and the gate material, for example, when the ferroelectric layer is HfOxWhen the corresponding second interface layer material may be SiO2/SiN/SiO2Laminating; for example, when the ferroelectric layer material is SBT or PZT, the corresponding first interface layer material may be HfOxOr AlOx。
The operation principle of the memory cell in the fusion memory of the above embodiment can be shown with reference to fig. 4. FIG. 4 is a schematic diagram of a fusion memory implemented according to the present disclosure, as shown in FIG. 4, in a charge trapping mode when a gate voltage V is appliedGGradually increasing, threshold voltage VTAlso gradually becomeIncreasing, at point A, the scan voltage is-5V, corresponding to the threshold voltage VTabout-1.5V; when the scan voltage gradually rises and changes to a positive value, such as point B, the scan voltage is 1V, and the threshold voltage V is setTabout-1.1V, an increased threshold compared to point a, similar to points C and D, both in charge trapping mode; when the voltage rises to 4V and exceeds the ferroelectric switching voltage generated in the ferroelectric layer, ferroelectric switching occurs at this time, the threshold voltage drops, and when the scanning voltage is increased again, the threshold voltage V is increasedTAnd gradually descending, and then entering a ferroelectric flip mode.
According to another aspect of the embodiments of the present disclosure, there is also provided a writing method for a converged memory, the converged memory including a plurality of memory cells, each memory cell bulk substrate; a channel region extending between the source, the drain, and the source drain over the substrate, and a ferroelectric layer and a gate stacked on the channel region. It should be noted that the channel region and the ferroelectric layer herein may not include other semiconductor layers, may also include the above-mentioned first interface layer, and may include a second interface layer between the ferroelectric layer and the channel or may directly contact with both of them, so that the memory cell herein may have the structure described in any of the embodiments of fig. 1-3. The write method of the fusion memory of the present embodiment includes:
applying a first voltage between the gate and the bulk of at least one of the memory cells, the first voltage being less than a switching voltage at which the ferroelectric layer undergoes a polarization reversal; and setting the source and the gate to be grounded or in a floating state, respectively.
FIG. 5 is a schematic diagram of a write method for a fusion memory according to an embodiment of the disclosure. Shown at 51 in fig. 5, the memory cell is held at zero potential (e.g., ground) or in a floating state at its source and drain terminals, respectively, the bulk is held at zero potential (e.g., ground), and a first voltage is applied at the gate terminal that is less than the switching voltage for ferroelectric body-flipping. This operation is illustrated in the charge trapping mode of FIG. 4, which is performed in a low voltage region (less than the switching voltage), and is performed by applying a first voltage to cause electrons to charge and discharge, thereby causing a threshold voltage change, which is faster, reaching a programming speed of 20ns, faster than that of a conventional DRAM, and lower voltage.
Referring also to fig. 7A-7C, as shown in fig. 7A, when an electric field is applied to the memory cell (i.e., the transistor including the ferroelectric layer), the central atoms in the crystalline body in the ferroelectric layer stay at a low energy state along the electric field, and after the electric field is removed, the central atoms remain at the low energy state; when the first voltage is applied, the ferroelectric domain does not turn (the first voltage is in a non-turning voltage interval). As shown in fig. 7B, the first voltage in the forward direction can be controlled to be 3V, the pulse time is 20nm, and a threshold change is generated in the process, that is, data writing is realized; by comparison with the conventional DRAM, as can be seen from FIGS. 7B and 7C, it passes through 1012The threshold voltage of the above circulation is still smaller than that of the traditional DRAM, the retention time is more than 1000 seconds at 85 ℃, the speed is equivalent to that of the DRAM, and the retention characteristic is greatly superior to that of the DRAM in the prior art.
In some embodiments, the writing method of the fusion memory may further include applying a second voltage between the gate and the bulk of at least one memory cell, the second voltage being greater than a switching voltage at which the ferroelectric layer undergoes a polarization switching, as illustrated in writing mode 52 in fig. 5; and the source is grounded and the gate is at a positive voltage. This operation can be referred to as the ferroelectric switching mode in fig. 4, which is completed in a high voltage region (larger than the switching voltage), by applying a second voltage to cause the ferroelectric domain to switch, the programming voltage of the process is still smaller than that of the conventional FLASH, and the speed is faster, which can reach the 20ns level programming speed.
In some embodiments, for the application of the second voltage, referring to fig. 8A-8C, an electric field is applied to the memory cell (i.e., the transistor including the ferroelectric layer), and the ferroelectric domain inverts when the second voltage is applied (the second voltage is greater than the switching voltage). As shown in fig. 8B, the second voltage in the forward direction can be controlled to be 6V, the pulse time is 20nm, and in the process, a threshold change is generated, that is, data writing is realized, and ferroelectric domain inversion is generated at the same time; by comparing with the existing FLASH, as can be seen from fig. 8B and 8C, after many cycles, the threshold voltage is still smaller than that of the conventional FLASH, and the retention time, the speed are comparable to that of the FLASH, and the programming voltage is much smaller than that of the conventional FLASH.
In some embodiments, the writing method of this embodiment further includes reading the data written into the memory cell, for example, as shown in fig. 7C, a smaller reading voltage (e.g., -0.7V) may be applied to achieve data reading, and the threshold voltage is not changed.
FIG. 6 is a schematic diagram of an erase method for a fusion memory according to an embodiment of the disclosure. Shown at 61 in fig. 6, a zero potential (e.g., ground) is maintained at the source and drain terminals of the memory cell or in a floating state, respectively, the bulk is maintained at a zero potential (e.g., ground), and a negative third voltage, whose absolute value is less than the switching voltage for ferroelectric body-flipping polarization switching, is applied to the gate terminal. This operation is illustrated in the charge trapping mode of FIG. 4, which is performed in a low voltage region (less than the switching voltage), and is performed by applying a third voltage to cause electrons to charge and discharge, thereby causing a threshold voltage change, which is faster, reaching an erase speed of 20ns, faster than that of a conventional DRAM, and lower voltage.
Referring also to fig. 7A-7C, as shown in fig. 7A, when an electric field is applied to the memory cell (i.e., the transistor including the ferroelectric layer), the central atoms in the crystalline body in the ferroelectric layer stay at a low energy state along the electric field, and after the electric field is removed, the central atoms remain at the low energy state; when the third voltage is applied, the ferroelectric domains are not inverted (the third voltage is in a non-inverted voltage interval). As shown in fig. 7B, the third voltage in the forward direction can be controlled to be-4V, and the pulse time is 20nm, in the process, a threshold change is generated, that is, data erasure is realized; by comparison with the conventional DRAM, as can be seen from FIGS. 7B and 7C, it passes through 1012In the above circulation, the threshold voltage is still smaller than that of the traditional DRAM, the retention time of 85 degrees and 1000 seconds is longer than that of the traditional DRAM, the speed is equivalent to that of the DRAM, and the retention characteristic is greatly superior to that of the traditional DRAM.
In some embodiments, the erasing method of the fusion memory may further include applying a fourth voltage between the gate and the bulk of at least one memory cell in an erasing manner as indicated by 62 in fig. 6, wherein the absolute value of the fourth voltage is greater than a switching voltage at which the polarization of the ferroelectric layer is switched; the bulk is at zero voltage (e.g., ground), the gate is at a negative voltage, the drain is at ground or floating, and the source is at a positive voltage. This operation can be referred to as the ferroelectric switching mode in fig. 4, which is completed in a high voltage region (larger than the switching voltage), and by applying the fourth voltage, the domain switching of the ferroelectric cell is induced, the erase voltage of the process is still smaller than that of the conventional FLASH, and the speed is faster, which can reach the erase speed of 20 ns.
In some embodiments, for the application of the fourth voltage, referring to fig. 8A-8C, an electric field is applied to the memory cell (i.e., the transistor including the ferroelectric layer), and the ferroelectric domain inverts when the fourth voltage is applied (the fourth voltage is greater in absolute value than the switching voltage). As shown in fig. 8B, the fourth voltage that can be controlled to be reversed is-6V, the pulse time is 20nm, and in the process, a threshold change is generated, that is, data erasure is realized, and ferroelectric domain inversion is generated at the same time; compared with the existing FLASH, as can be seen from fig. 8B and 8C, after many cycles, the threshold voltage is still smaller than that of the conventional FLASH, the retention time and speed are equivalent to those of the FLASH, and the erase voltage is much smaller than that of the conventional FLASH.
According to another aspect of the embodiments of the present disclosure, a memory is provided, which includes a plurality of memory cells, each memory cell includes a deep level defective dielectric layer, so that the memory cell can operate in a charge trapping mode, and therefore, the memory has the function of a DRAM, and meanwhile, the operation voltage is much lower than that of a conventional DRAM, and the memory and the erasing speed are fast.
Fig. 9A is a schematic cross-sectional view of a memory cell in a fusion-type memory according to an embodiment of the disclosure. A fusion type memory is provided in fig. 9A, and includes a plurality of memory cells 91, wherein the memory cell 10 includes: a bulk substrate; a source and a drain over the bulk substrate and a channel region extending between the source and drain regions; the deep energy level defect dielectric layer is positioned above the channel region; and the grid electrode is positioned on the deep-level defect dielectric layer.
The memory unit in the embodiment comprises a channel region and a deep energy level defect dielectric layer which is arranged above the channel region, wherein the channel region and the deep energy level defect dielectric layer are in direct contact, and the deep energy level defect dielectric layer can work in a charge trapping mode and a polarization inversion mode by adjusting the voltage applied to a grid electrode.
The deep level defect dielectric layer in fig. 9A uses the deep level defect dielectric layer as a gate dielectric between the gate and the channel. The memory can store charges by utilizing a large number of lattice defects in deep-level defect materials, so that the memory can work in a charge trapping mode and store data by trapping and releasing charges.
The deep level defect dielectric layer referred in the embodiments of the present disclosure refers to a dielectric layer material with a charge trap level of more than 1eV, such as SiN, ferroelectric material, etc.
In some embodiments, the material of the ferroelectric layer may be doped HfOx，ZrOxPZT, BFO or BST, preferably HfOx(ii) a The doping species can be Si, Zr, Hf, Al, Y, Gd, La, Sr, Ti, and/or N, etc., and the preferred doping is Zr; the doping content is between 10 and 75 percent.
In some embodiments, the ferroelectric layer has a thickness of 3nm to 10 nm; the length of the channel is 5 nm-200 nm, and the width of the channel is 5 nm-500 nm.
In some embodiments, the bulk, source, drain and gate may be configured according to existing memory cell arrangements, and the corresponding fabrication processes may be performed with reference to existing process flows and participation.
In some embodiments, the fusion type memory further comprises a control circuit and a gate control sub-circuit connected to each memory cell for individually applying a specific first voltage to the gate electrode to make the deep level defect dielectric layer under the gate electrode trap electrons, and changing the threshold voltage during the charging or discharging process. The control circuit can also be integrated in a read-write circuit of the memory, and controls the corresponding voltage pulse value in the read-write process. The read-write circuit writes the content into the accessed memory cell at a first voltage according to the read-write instruction of the CPU; or read information from the accessed memory cell. The absolute value of the first voltage should be smaller than the reversal voltage value required for polarization reversal of the deep level defect material in the deep level defect dielectric layer, and as the first voltage rises, the more electrons are trapped by the deep level defect dielectric layer, the threshold voltage of the memory cell will gradually rise.
In some embodiments, the source and drain regions may be left floating or adjusted to corresponding states (positive voltage, negative voltage, or ground) according to the operating state of the memory (write, erase, or read) as required by the memory product. The specific adjustment method may refer to the above-described embodiment of the write method for the fusion memory.
In some embodiments, the fusion type memory of the embodiments of the present disclosure may use word line, bit line and source line architectures known in the art to arrange a memory cell array. The word lines are coupled to the gates of the respective memory cells, the bit lines are coupled to the drains of the respective memory cells, and the source lines are coupled to the sources of the respective ferroelectric memory cells.
In some embodiments, the fusion-type memory of the embodiments of the disclosure further includes a readout circuit for reading out the information stored in each memory cell, and the readout circuit can read out the information in the memory cell by applying a smaller readout voltage (e.g., -0.7V, 0V, or 0.7V) in the deep level defect polarization inversion or deep level defect dielectric layer trapping electron mode, respectively.
FIG. 9B is a cross-sectional schematic view of a memory cell in another fusion-type memory of an embodiment of the disclosure. A fusion-type memory is provided in fig. 9B, which includes a plurality of memory cells 92, wherein the memory cells 92 include: a bulk substrate; a source and a drain over the bulk substrate and a channel region extending between the source and drain regions; a first interface layer located on the channel; the deep energy level defect dielectric layer is positioned on the first interface layer; and the grid electrode is positioned on the deep-level defect dielectric layer.
The memory cell structure in this embodiment is substantially similar to that of fig. 9A, except that a first interfacial layer is disposed between the deep level defect dielectric layer and the channel region. The first interfacial layer may be used to control the growth of deep level defect materials, such as lattice orientation control or defect distribution.
In some embodiments, the material of the first interfacial layer may be SiO2，SiN，SiON，AlOx， TiO2，HfOxOr a combination thereof, the first interface layer material may preferably be SiO2(ii) a The thickness of the first interface layer can be 0.3 nm-3 nm; the material of the first interface layer is adjusted according to the ferroelectric layer material to be grown, for example, when the ferroelectric layer material is HfOxWhen the first interface layer material is SiON, the corresponding first interface layer material may be SiON; for example, when the ferroelectric layer material is SBT or PZT, the corresponding first interface layer material may be HfOxOr AlOx。
FIG. 9C is a schematic cross-sectional view of a memory cell in yet another fusion-type memory of an embodiment of the disclosure. A fusion-type memory is provided in fig. 9C, which includes a plurality of memory cells 93, wherein the memory cell 30 includes: a bulk substrate; a source and a drain over the bulk substrate and a channel region extending between the source and drain regions; a first interface layer located on the channel; the deep energy level defect dielectric layer is positioned on the first interface layer; the second interface layer is positioned on the deep level defect dielectric layer; and the grid electrode is positioned on the second interface layer.
The memory cell structure in this embodiment is substantially similar to that of fig. 9A, except that a first interface layer is disposed between the deep level defect dielectric layer and the channel region, and a second interface layer is disposed between the deep level defect dielectric layer and the gate electrode. The first interfacial layer may be used to control the growth of deep level defect materials, such as lattice orientation control or defect distribution. The second interface layer is used for isolating mutual diffusion and interface damage between the metal gate and the storage layer.
In some embodiments, the material of the first interfacial layer may be SiO2，SiN，SiON，AlOx， TiO2，HfOxOr a combination thereof, the first interface layer material may preferably be SiO2(ii) a The thickness of the first interface layer can be 0.3 nm-3 nm; the material of the first interface layer is adjusted according to the ferroelectric layer material to be grown, for example, when the ferroelectric layer material is HfOxWhen the first interface layer material is SiON, the corresponding first interface layer material may be SiON; for example, when the ferroelectric layer is SBT or PZT, the corresponding first interface layerThe material may be HfOxOr AlOx。
In some embodiments, the second interface layer material may be SiO2，SiN，SiON，AlOx， TiO2Or HfOx. Preferably, the second interface layer material may be AlOx(ii) a The thickness of the second interface layer can be 1 nm-10 nm; the material of the second interface layer is adjusted according to the ferroelectric layer and the gate material, for example, when the ferroelectric layer is HfOxWhen the corresponding second interface layer material may be SiO2/SiN/SiO2Laminating; for example, when the ferroelectric layer material is SBT or PZT, the corresponding first interface layer material may be HfOxOr AlOx。
The operation principle of the memory cell in the fusion memory of the above embodiment can refer to the charge trapping mode portion shown in fig. 4. FIG. 4 is a schematic diagram of a fusion memory implemented according to the present disclosure, as shown in FIG. 4, in a charge trapping mode when a gate voltage V is appliedGGradually increasing, threshold voltage VTAnd gradually increases, at the point A, the scanning voltage is-5V, and the corresponding threshold voltage VTabout-1.5V; when the scan voltage gradually rises and changes to a positive value, such as point B, the scan voltage is 1V, and the threshold voltage V is setTabout-1.1V, the threshold increases compared to point a, and similarly points C and D, are in charge trapping mode.
According to another embodiment of the present disclosure, there is provided a neural network operation system, including:
an operational array comprising operational units, each operational unit comprising: a source terminal, a drain terminal and a gate, and a threshold voltage adjustment layer under the gate;
the grid electrodes of each row of operation units of the operation array are connected together, and each row is used for determining a weight value according to the threshold voltage adjusted by the threshold voltage adjusting layer;
the threshold voltage adjusting layer is a ferroelectric layer.
First, as shown in fig. 10, in a neural network computing device, a traditional two-terminal memristor or a three-terminal transistor of a synapse device is realized in a simulated manner,synapse devices are generally interconnected by parallel NOR structures, and after weight training, the operations are completed by current convergence. As shown in fig. 10 and 11, the current value at the output terminal Y is the sum of the voltage value Y at the input terminal X G multiplied by the weight (conductance) of the synapse at the corresponding crossing terminal
As shown in fig. 10, the current generated by each terminal is counted by 10uA, the maximum parallel number of the input X is about hundreds of orders (the maximum value of the current of the Y terminal at the summary is about a few mA), the current generated by each terminal is counted by 1uA, the maximum parallel number of the input X is about thousands of orders, and the problem of this connection is that the training power consumption is large and the parallel number is limited. The structure has the problems of large operating current, large power consumption training power consumption and the like, so that the parallel number is limited.
Based on the above statements, as shown in fig. 12, the neural network operation system provided by the embodiment of the present disclosure includes an operation array, wherein an operation unit summarized by the array includes a threshold voltage adjustment layer, and the adjustment layer is made of a ferroelectric layer.
As shown in fig. 13, the operation array includes operation units, each of which includes: a source terminal, a drain terminal and a gate, and a threshold voltage adjustment layer under the gate and a channel region extending between the source and drain regions, the threshold voltage adjustment layer being located over the channel region; the grid electrodes of each row of operation units of the operation array are connected together, and each row is used for adjusting the weight according to the threshold voltage adjusted by the threshold voltage adjusting layer; the threshold voltage adjusting layer is a ferroelectric layer. Fig. 13 shows a three-terminal threshold-modulated synapse device, in which a modulation layer modulates a threshold voltage to regulate a source-drain resistance, thereby being used for synapses in a neural network.
In fig. 12, the operation units (synapses and synapses) in each row are interconnected in series. Wherein, X is an input end, the training of the weight is realized by applying voltage on the X end, the current during the training is mainly the leakage current (pA magnitude) of the Gate end, and the power consumption is small; optionally, for the set threshold voltage of the operation unit in the n-th row and m-th columnThe determination of (2) can be implemented by simultaneously applying voltages to the m-th column of the input terminal X and the n-th row of the array, i.e. by jointly adjusting the threshold voltage of the operation unit, so as to implement weight input for a specific row and column. After training, a fixed current i is applied to each row line to read a voltage value Vn，VnIs proportional to the sum of the synaptic resistance values in series for each row. The current value when the structure is read is a constant value, the parallel number is not limited, and the super-large scale neural network can be constructed.
In the above formula, VnRepresenting the total output voltage of the nth row, i having a value of 1 to m, RmThe current of the nth row and the mth column is shown, and beta is the transconductance of the transistor; xm is the input of the gate terminal of the mth column (corresponding to the input value of the neural network), VthmIs the threshold voltage of the operation unit in the nth row of the mth column.
In some embodiments, the gate of each column of the operation array is used for inputting a value to be operated, and the operation units of each row of the operation array are connected in series and used for outputting the output value after respective operation of the operation units of each row.
In some embodiments, the arithmetic units in each row are also connected in series with a summation circuit for summing the arithmetic results of the units to form an output voltage value. I.e. the output i x R for each drain terminal in the above formulamThe Vn is obtained by addition.
In some embodiments, the summing circuit back end of each row further comprises an analog-to-digital conversion circuit for converting the output voltage value of each row into an output value of the corresponding digital signal.
In some embodiments, the ferroelectric layer material is doped HfOx, ZrOx, PZT, BFO, or BST.
In some embodiments, each operation unit in the operation array is constructed in a 3D stacking manner.
In some embodiments, the absolute value of the voltage applied to the gate of each operation unit is configured to be larger than a switching voltage at which the polarization of the ferroelectric layer is switched.
Fig. 14 is a block diagram of a neural network computing system according to an embodiment of the present disclosure. As shown in fig. 14, a typical neural network operation system 1400 may include an operation array 1401, and may further include a control circuit 1402 and a reading circuit 1403, where the control circuit 1402 may control the operation array to perform training adjustment of weights of operation units in the array (by controlling gate voltages of columns where the operation units are located and/or voltages of rows where the operation units are located), control the neural network operation (by inputting voltages corresponding to values into the neural network at the X terminal), and control the reading neural network operation result (inputting a reading current at the source terminal, outputting a total current/voltage at each row of the series, determining a corresponding value through a summing circuit and an analog-to-digital conversion circuit, and outputting the corresponding value to the reading circuit 1403).
While this disclosure may describe many details, these should not be construed as limitations on the scope of the claimed invention or of inventions that may be claimed, but rather as descriptions of features specific to particular embodiments. Certain features that are described in this disclosure in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination. Furthermore, although features may be described above as acting in certain combinations and even initially claimed as such, one or more features may in some cases be excised from the claimed combination, and the claimed combination may be directed to a subcombination or variation of a subcombination. Similarly, while operations are depicted in the drawings in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order, or that all illustrated operations be performed, to achieve desirable results.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (14)
1. A write method of a fusion memory includes a plurality of memory cells, each memory cell being a bulk substrate; a channel region extending between the source, the drain, and the source drain over the substrate; a first interface layer located on the channel; a ferroelectric layer located on the first interface layer; a second interface layer located on the ferroelectric layer; a gate electrode on the second interface layer; the writing method comprises the following steps:
applying a first voltage between the gate and the bulk of at least one of the memory cells, the first voltage being less than a switching voltage at which a polarization switching of the ferroelectric layer occurs; the source electrode and the drain electrode are grounded or in a floating state respectively;
applying a second voltage between the gate and the bulk of at least one of the memory cells, the second voltage being greater than a switching voltage at which a polarization switching of the ferroelectric layer occurs; and the source electrode is in a grounding state, and the gate electrode is in a positive voltage state.
2. The method of claim 1, wherein the first voltage is positive and the first voltage is between 0.5V and 3V.
3. The method of claim 1, wherein the second voltage is positive and is between 3V and 10V.
4. The writing method according to claim 1, wherein the first voltage is applied by applying a forward first voltage to the gate so that the bulk voltage is grounded.
5. The writing method according to claim 1, wherein the second voltage is applied by applying a second voltage in a forward direction to the gate so that the bulk voltage is grounded.
6. The writing method according to claim 1, further comprising: and adjusting the threshold voltage of the corresponding memory cell by adjusting the first voltage and/or changing the crystal lattice defect of the ferroelectric layer.
7. The writing method according to claim 1, further comprising: the threshold voltage of the corresponding memory cell is adjusted by adjusting the second voltage and/or reversing the polarization.
8. The writing method according to claim 1, further comprising: the read voltage is applied as the middle of the threshold voltage adjustment interval.
9. An erasing method for a fusion type memory including a plurality of memory cells, each memory cell bulk substrate; a channel region extending between the source, the drain, and the source drain over the substrate; a first interface layer located on the channel; a ferroelectric layer located on the first interface layer; a second interface layer located on the ferroelectric layer; a gate electrode on the second interface layer; the erasing method comprises the following steps:
applying a third voltage between the gate and the bulk of at least one of the memory cells, the third voltage having an absolute value less than a switching voltage at which a polarization switching of the ferroelectric layer occurs;
applying a fourth voltage between the gate and the bulk of at least one of the memory cells, the fourth voltage having an absolute value greater than a switching voltage at which a polarization switching of the ferroelectric layer occurs; the source and the drain are grounded or in a floating state, respectively.
10. The erase method of claim 9, wherein the third voltage is negative and is between-1V and-3V.
11. The erase method of claim 9, wherein the fourth voltage is negative and the fourth voltage is between-3V and-10V.
12. The erase method of claim 9, wherein the third voltage is applied by applying a reverse voltage to the gate to bring the bulk voltage to ground.
13. The erase method of claim 9, wherein the fourth voltage is applied by applying a reverse voltage to the gate to bring the bulk voltage to ground.
14. A processing method for a fusion type memory, comprising the writing method of claim 1 and the erasing method of claim 9.
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