CN109884837A - Lightwave filter - Google Patents

Lightwave filter Download PDF

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Publication number
CN109884837A
CN109884837A CN201910345633.9A CN201910345633A CN109884837A CN 109884837 A CN109884837 A CN 109884837A CN 201910345633 A CN201910345633 A CN 201910345633A CN 109884837 A CN109884837 A CN 109884837A
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CN
China
Prior art keywords
conductive layer
piezoelectric layer
cavity plate
layer
piezoelectric
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CN201910345633.9A
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Chinese (zh)
Inventor
张文君
贺行政
庞昕
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Brigates Microelectronic Co Ltd
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Brigates Microelectronic Co Ltd
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Priority to CN201910345633.9A priority Critical patent/CN109884837A/en
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Abstract

A kind of lightwave filter, it include: cavity resonator structure, the cavity resonator structure includes opposite the first cavity plate and the second cavity plate, and the first cavity plate includes the first piezoelectric layer and the first conductive layer, and the first conductive layer is located at the first piezoelectric layer along the first cavity plate to the both side surface in the second cavity plate direction;First voltage source, first voltage source is connect with the first conductive layer of the first piezoelectric layer two sides respectively, first voltage source is suitable for applying the first the first conductive layer for adjusting voltage to the first piezoelectric layer two sides, wave length shift caused by the long geometrical deviation of the chamber to compensate the cavity resonator structure.The performance of the lightwave filter is improved.

Description

Lightwave filter
Technical field
The present invention relates to filter field more particularly to a kind of lightwave filters.
Background technique
Filter is a kind of wavelength selecting device, is had important application in a communications system, such as lightwave filter.
The working principle of lightwave filter based on Fabry-Perot cavity are as follows: light beam enters two pieces of parallel plates Between, later, multiple reflection and incidence occur between two plates for light beam, and incidence wave and back wave can interfere.Chamber Body transmissivity is with the significant changes of wavelength, and when transmitted light is with phase, they have constructive interference, corresponds to the maximal peak of transmissivity, And the minimum peak value of transmissivity is then corresponded to when transmitted light reverse phase.
However, the performance of existing lightwave filter is poor.
Summary of the invention
Problems solved by the invention is to provide a kind of lightwave filter, to improve the performance of lightwave filter.
To solve the above problems, the present invention provides a kind of lightwave filter, comprising: cavity resonator structure, the resonant cavity knot Structure includes opposite the first cavity plate and the second cavity plate, and the first cavity plate includes the first piezoelectric layer and the first conductive layer, the first conductive layer Positioned at the first piezoelectric layer along the first cavity plate to the both side surface in the second cavity plate direction;First voltage source, first voltage source respectively with First conductive layer of the first piezoelectric layer two sides connects, and first voltage source is suitable for applying first and adjusts voltage to the first piezoelectric layer two sides The first conductive layer, wave length shift caused by the long geometrical deviation of chamber to compensate the cavity resonator structure.
Optionally, the material of first piezoelectric layer includes piezoceramic material, piezoelectricity glass material or piezoelectric inorganic Close object material.
Optionally, the material of first conductive layer is transparent conductive material.
Optionally, there are several first openings, the bottom-exposed of first opening goes out first in first conductive layer The surface of piezoelectric layer.
Optionally, first conductive layer is pectinate texture.
Optionally, first piezoelectric layer with a thickness of 0.1 millimeter~50 millimeters.
Optionally, second cavity plate includes the second piezoelectric layer and the second conductive layer, and the second conductive layer is located at the second piezoelectricity Layer is along the first cavity plate to the both side surface in the second cavity plate direction;The lightwave filter further include: the second voltage source, second voltage Source is connect with the second conductive layer of the second piezoelectric layer two sides respectively, and the second voltage source is suitable for applying second and adjusts voltage to the second pressure Second conductive layer of electric layer two sides, first voltage source and the second voltage source are suitable for compensating the chamber length of the cavity resonator structure jointly Wave length shift caused by geometrical deviation.
Optionally, the material of second piezoelectric layer includes piezoceramic material, piezoelectricity glass material or piezoelectric inorganic Close object material.
Optionally, the material of second conductive layer is transparent conductive material.
Optionally, there are several second openings, the bottom-exposed of second opening goes out second in second conductive layer The surface of piezoelectric layer.
Optionally, second conductive layer is pectinate texture.
Optionally, second piezoelectric layer with a thickness of 0.1 millimeter~50 millimeters.
Compared with prior art, technical solution of the present invention has the advantage that
In the lightwave filter that technical solution of the present invention provides, the first cavity plate includes the first piezoelectric layer and the first conductive layer, First conductive layer is located at the first piezoelectric layer along the first cavity plate to the both side surface in the second cavity plate direction.First voltage source is suitable for applying First adjusts the first conductive layer of voltage to the first piezoelectric layer two sides, the long geometrical deviation of the chamber to compensate the cavity resonator structure Caused wave length shift.In the case where application first adjusts voltage, the thickness of the first piezoelectric layer changes first cavity plate, this Even if sample is bound to cause the geometrical deviation of the drift of wavelength in the long presence in process of chamber of cavity resonator structure, also can Enough thickness changes by the first piezoelectric layer compensate, so that the long size of the chamber of cavity resonator structure, which meets, exports default wave Long interference condition, so that the frequency of the light wave of lightwave filter outgoing meets preset requirement, to reach the function of frequency-selecting.By In the wavelength for adjusting the wave that lightwave filter is emitted by the way of adjusting the first adjusting voltage, so that the precision adjusted mentions Height, and the difficulty adjusted reduces.To sum up, lightwave filter performance is improved.
Further, second cavity plate includes the second piezoelectric layer and the second conductive layer;The lightwave filter further include: the Two voltage sources, the second voltage source are connect with the second conductive layer of the second piezoelectric layer two sides respectively, and the second voltage source is suitable for applying the Two adjust the second conductive layer of voltage to the second piezoelectric layer two sides.The second voltage source is suitable for applying second and adjusts voltage to the second pressure Second conductive layer of electric layer two sides, in the case where application second adjusts voltage, the thickness of the second piezoelectric layer occurs the second cavity plate Variation.The thickness change of first piezoelectric layer and the thickness change of the second piezoelectric layer are suitable for compensating the chamber of the cavity resonator structure jointly Wave length shift caused by long geometrical deviation, so that the compensation ability of wave length shift is improved, even if chamber it is long have compared with In the case where big geometrical deviation, the frequency for the wave that lightwave filter can also be emitted suits the requirements, to reach frequency-selecting Function.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of lightwave filter;
Fig. 2 is the structure chart of lightwave filter in one embodiment of the invention;
Fig. 3 is the structure chart of lightwave filter in another embodiment of the present invention.
Specific embodiment
As described in background, the performance of existing lightwave filter is poor.
A kind of lightwave filter, referring to FIG. 1, including: cavity resonator structure, the cavity resonator structure is Fabry-Perot Resonant cavity, the cavity resonator structure include opposite the first cavity plate 101 and the second cavity plate 102.
The long geometric dimension of the chamber of above-mentioned lightwave filter inevitably has certain deviation in production, leads to the wave of output The preset wavelength of wavelength departure.
A kind of method of adjusting are as follows: artificial mechanism mobile the distance between first cavity plate 101 and the second cavity plate 102 are used, The distance between first cavity plate 101 and the second cavity plate 102 are finely adjusted.
However, since the deviation of the long geometric dimension of the chamber of lightwave filter is usually in nanometer amount pole, manual adjustment Difficulty it is larger, precision is poor.It is in particular in, artificial mobile the distance between first cavity plate 101 and the second cavity plate 102, very Difficulty nanometer amount extremely in controlled, it is primary mobile to be easy to the deviation range beyond geometric dimension.
To solve the above-mentioned problems, the present invention provides a kind of lightwave filter, comprising: cavity resonator structure, the resonant cavity Structure includes opposite the first cavity plate and the second cavity plate, and the first cavity plate includes the first piezoelectric layer and the first conductive layer, and first is conductive Layer is located at the first piezoelectric layer along the first cavity plate to the both side surface in the second cavity plate direction;First voltage source, first voltage source difference It is connect with the first conductive layer of the first piezoelectric layer two sides, first voltage source is suitable for applying first and adjusts voltage to the first piezoelectric layer two First conductive layer of side, to compensate wave length shift caused by the geometrical deviation that the chamber of the cavity resonator structure is grown.The light wave filter The performance of wave device is improved.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention Specific embodiment be described in detail.
The present invention provides a kind of lightwave filter, referring to FIG. 2, including:
Cavity resonator structure, the cavity resonator structure include opposite the first cavity plate 210 and the second cavity plate 220, the first cavity plate 210 include the first piezoelectric layer 211 and the first conductive layer 212, and the first conductive layer 212 is located at the first piezoelectric layer 211 along the first cavity plate The both side surface in 210 to the second cavity plate, 220 direction;
First voltage source 230, first voltage source 230 connect with the first conductive layer 212 of 211 two sides of the first piezoelectric layer respectively It connects, first voltage source 230 is suitable for applying the first the first conductive layer 212 for adjusting voltage to 211 two sides of the first piezoelectric layer, with compensation Wave length shift caused by the long geometrical deviation of the chamber of the cavity resonator structure.
The cavity resonator structure is Fabry-Perot cavity body.
The material of first piezoelectric layer 211 includes piezoceramic material, piezoelectricity glass material or piezoelectric inorganic compound Material.
The material light transmission of first piezoelectric layer 211.
The thickness of first piezoelectric layer 211 can be with the electricity being applied on the first piezoelectric layer 211 in a thickness direction The variation of pressure and change.
First conductive layer 212 is located at the first piezoelectric layer 211 along the two sides table in 210 to the second cavity plate of the first cavity plate, 220 direction Face, that is to say, that the first conductive layer 212 is located at the first piezoelectric layer 211 along the both side surface in the long direction L of chamber.
In one embodiment, the material of first conductive layer 212 is transparent conductive material, so that incident optical energy is from the One conductive layer 212 avoids the first conductive layer 212 from stopping the propagation of incident light through the surface for reaching the first piezoelectric layer 211.
In the present embodiment, the material of the first conductive layer 212 is transparent conductive material, the material light transmission of the first piezoelectric layer 211, Incident optical energy is made to pass through the first cavity plate 210 and the second cavity plate from the first conductive layer 212 and the first piezoelectric layer 211 in this way Between 220.
When the material of first conductive layer 212 is transparent conductive material, first conductive layer 212 is located at the first pressure Electric layer 211 along 210 to the second cavity plate of the first cavity plate, 220 direction both side surface, the first piezoelectric layer 211 along the first cavity plate 210 to The both side surface in 220 direction of the second cavity plate is completely covered by the first conductive layer 212.
In other embodiments, there are several first openings, the bottom-exposed of first opening goes out in the first conductive layer The surface of first piezoelectric layer, e.g., the first conductive layer are pectinate texture, the first opening of the first piezoelectric layer side and the first piezoelectric layer First opening of the other side is oppositely arranged, and in this case, the material of the first conductive layer can be incident with lighttight conductive material Luminous energy passes through between the first cavity plate and the second cavity plate from the first piezoelectric layer of the first open bottom.
First conductive layer 212 is located at the first piezoelectric layer 211 along the two sides table in 210 to the second cavity plate of the first cavity plate, 220 direction Face.
It should be noted that the first piezoelectric layer 211 is along the of 210 to the second cavity plate of the first cavity plate, 220 direction, one side surface One conductive layer 212, with the first piezoelectric layer 211 along the first conduction of 210 to the second cavity plate of the first cavity plate, the 220 another side surface in direction Layer 212 is mutually discrete, and is not connected to, in this way in the first piezoelectric layer 211 along 210 to the second cavity plate of the first cavity plate, 220 direction two sides When applying certain pressure difference on first conductive layer 212 on surface, the first piezoelectric layer 211 has pressure difference in a thickness direction, can make First piezoelectric layer 211 changes in the size of thickness direction.
In the present embodiment, the chamber length of the cavity resonator structure is compensated only by adusting the thickness change of the first piezoelectric layer Wave length shift caused by geometrical deviation.
In the present embodiment, the material of the second cavity plate 220 is glass, and the second cavity plate 220 can also be other transparent cavity plates.
In the present embodiment, first piezoelectric layer 211 with a thickness of 0.1 millimeter~50 millimeters, if the first piezoelectric layer 211 Thickness is excessive, then under the variation of higher voltage difference, certain variation can just occur for the thickness of the first piezoelectric layer 211, lead in this way Cause the sensitivity adjusted poor;If the thickness of the first piezoelectric layer 211 is too small, cause the first piezoelectric layer 211 in the electricity of full scale Under pressure is adjusted, the thickness of the first piezoelectric layer 211 always changes smaller, leads to the benefit of wave length shift caused by the geometrical deviation long to chamber The effect of repaying is smaller.
In the present embodiment, in the case where application first adjusts voltage, the thickness of the first piezoelectric layer becomes the first cavity plate Change, accordingly even when cavity resonator structure chamber it is long in process there are certain geometrical deviations, can also pass through first The thickness change of piezoelectric layer compensates, so that the long size of the chamber of cavity resonator structure meets the interference item of output preset wavelength Part, so that the frequency of the light wave of lightwave filter outgoing meets preset requirement, to reach the function of frequency-selecting.Due to using adjusting First adjusts the mode of voltage to adjust the wavelength of the wave of lightwave filter outgoing, so that the precision adjusted improves, and adjust Difficulty reduces.To sum up, lightwave filter performance is improved.
In the present embodiment, light beam also needs that multiple reflection occurs between the first cavity plate 210 and the second cavity plate 220, because This, lightwave filter further includes the first reflectance coating and the second reflectance coating.
When the material of the first conductive layer 212 is transparent conductive material, the first reflectance coating is located at 211 direction of the first piezoelectric layer The surface of first conductive layer 212 of intracavitary side, and the first conductive layer 212 of the first piezoelectric layer 211 towards intracavitary side is located at Between first reflectance coating and the first piezoelectric layer 211,212 surface of the first conductive layer of the first piezoelectric layer 211 towards side outside chamber does not have There is reflectance coating, the second reflectance coating is located at the second cavity plate 220 towards intracavitary surface, and the second cavity plate 220 does not have towards the surface outside chamber There is reflectance coating.
When having the several first opening in the first conductive layer, the first reflectance coating is located at the first piezoelectric layer towards intracavitary table Face, the second reflectance coating are located at the second cavity plate 220 towards intracavitary surface.
Another embodiment of the present invention also provides a kind of lightwave filter, the lightwave filter and previous embodiment of the present embodiment Difference be: second cavity plate includes the second piezoelectric layer and the second conductive layer, and the second conductive layer is located at the second piezoelectric layer edge The both side surface of first cavity plate to the second cavity plate direction;The lightwave filter further include: the second voltage source, the second voltage source point It is not connect with the second conductive layer of the second piezoelectric layer two sides, the second voltage source is suitable for applying second and adjusts voltage to the second piezoelectric layer Second conductive layer of two sides, first voltage source and the second voltage source are suitable for compensating the geometry of the chamber length of the cavity resonator structure jointly Wave length shift caused by deviation.It is identical with the lightwave filter of the temperature self-adaptation of previous embodiment interior about the present embodiment Hold, is no longer described in detail.
With reference to Fig. 3, lightwave filter includes: cavity resonator structure, and the cavity resonator structure includes the first opposite cavity plate 310 With the second cavity plate 320, the first cavity plate 310 includes the first piezoelectric layer 311 and the first conductive layer 312, and the first conductive layer 312 is located at the For one piezoelectric layer 311 along the both side surface in 310 to the second cavity plate of the first cavity plate, 320 direction, second cavity plate 320 includes the second pressure Electric layer 321 and the second conductive layer 322, the second conductive layer 322 are located at the second piezoelectric layer 321 along 310 to the second cavity plate of the first cavity plate The both side surface in 320 directions;First voltage source 330, first voltage source 330 are led with the first of 311 two sides of the first piezoelectric layer respectively Electric layer 312 connects, and first voltage source 330 is suitable for applying the first the first conductive layer for adjusting voltage to 311 two sides of the first piezoelectric layer 312;The second voltage source 331, the second voltage source 331 are connect with the second conductive layer 322 of 321 two sides of the second piezoelectric layer respectively, the Two voltage sources 331 are suitable for applying second and adjust second conductive layer 322 of the voltage to 321 two sides of the second piezoelectric layer, first voltage source 330 and the second voltage source 331 be suitable for compensating wave length shift caused by the long geometrical deviation of chamber of the cavity resonator structure jointly.
The structure of the first cavity plate of structural reference 210 of first cavity plate 310.The material of first piezoelectric layer 311 is pressed referring to first The material of electric layer 211.
The material of first conductive layer 312 is referring to the material of the first conductive layer 212, and the structure of the first conductive layer 312 is referring to the The structure of one conductive layer 212.
Thickness of the thickness of first conductive layer 312 referring to the first piezoelectric layer 211.
The material of second piezoelectric layer 321 includes piezoceramic material, piezoelectricity glass material or piezoelectric inorganic compound Material.
The material light transmission of second piezoelectric layer 321.
The thickness of second piezoelectric layer 321 can be with the electricity being applied on the second piezoelectric layer 321 in a thickness direction The variation of pressure and change.
First conductive layer 312 is located at the first piezoelectric layer 311 along the two sides table in 310 to the second cavity plate of the first cavity plate, 320 direction Face, that is to say, that the first conductive layer 312 is located at the first piezoelectric layer 311 along the both side surface of cavity length direction.Second conductive layer 322 Positioned at the second piezoelectric layer 321 along the both side surface in 310 to the second cavity plate of the first cavity plate, 320 direction, that is to say, that the second conductive layer 322 are located at the second piezoelectric layer 321 along the both side surface of cavity length direction.
In one embodiment, the material of second conductive layer 322 is transparent conductive material, so that luminous energy is from the first chamber The second conductive layer 322 is penetrated between 310 to the second cavity plate 320 of plate, and then is emitted to outside, and the second conductive layer 322 is avoided to stop The propagation of emergent light.
In the present embodiment, the material of the second conductive layer 322 is transparent conductive material, the material light transmission of the second piezoelectric layer 321, Pass through outgoing luminous energy from the second conductive layer 322 and the second piezoelectric layer 321.
When the material of second conductive layer 322 is transparent conductive material, second conductive layer 322 is located at the second pressure Electric layer 321 along 310 to the second cavity plate of the first cavity plate, 320 direction both side surface, the second piezoelectric layer 321 along the first cavity plate 310 to The both side surface in 320 direction of the second cavity plate is completely covered by the second conductive layer 322.
In other embodiments, there are several second openings, the bottom-exposed of second opening goes out in the second conductive layer The surface of second piezoelectric layer, e.g., the second conductive layer are pectinate texture, the second opening of the second piezoelectric layer side and the second piezoelectric layer Second opening of the other side is oppositely arranged, and in this case, the material of the second conductive layer can be emitted with lighttight conductive material Luminous energy is passed through from the second piezoelectric layer of the second open bottom.
Second conductive layer 322 is located at the second piezoelectric layer 321 along the two sides table in 310 to the second cavity plate of the first cavity plate, 320 direction Face.
It should be noted that the second piezoelectric layer 321 is along the of 310 to the second cavity plate of the first cavity plate, 320 direction, one side surface Two conductive layers 322, with the second piezoelectric layer 321 along the second conduction of 210 to the second cavity plate of the first cavity plate, the 220 another side surface in direction Layer 322 is mutually discrete, and is not connected to, and applies a level pressure on the second conductive layer 322 of 321 both side surface of the second piezoelectric layer in this way When poor, the second piezoelectric layer 321 has pressure difference in a thickness direction, and the second piezoelectric layer 321 can be made to send out in the size of thickness direction Changing.
Second piezoelectric layer 321 with a thickness of 0.1 millimeter~50 millimeters.If the thickness of the second piezoelectric layer 321 is excessive, Under the variation of higher voltage difference, certain variation can just occur for the thickness of the second piezoelectric layer 321, cause to adjust so sensitive It spends poor;If the thickness of the second piezoelectric layer 321 is too small, cause the second piezoelectric layer 321 in the case where the voltage of full scale is adjusted, second The thickness of piezoelectric layer 321 always changes smaller, causes the compensating action of wave length shift caused by the geometrical deviation long to chamber smaller.
In the present embodiment, the thickness change of the thickness change of the first piezoelectric layer and the second piezoelectric layer is suitable for described in common adjust The chamber of cavity resonator structure is long, and then adjusts the wavelength of the light of lightwave filter outgoing, so that the size that the chamber of cavity resonator structure is long Meet the interference condition of output preset wavelength, so that the frequency of the light wave of lightwave filter outgoing meets preset requirement.
In the present embodiment, the thickness change of the thickness change of the first piezoelectric layer and the second piezoelectric layer is suitable for described in common compensation The long geometrical deviation of the chamber of cavity resonator structure, so that the compensation ability of wave length shift is improved, even if long in larger chamber In the case where geometrical deviation, the frequency for the wave that lightwave filter can also be emitted suits the requirements, to reach the function of frequency-selecting.
In the present embodiment, light beam also needs that multiple reflection occurs between the first cavity plate 310 and the second cavity plate 320, because This, lightwave filter further includes the first reflectance coating and the second reflectance coating.
When the material of the first conductive layer 312 and the second conductive layer 322 is transparent conductive material, the first reflectance coating is located at the One piezoelectric layer 311 towards intracavitary side the first conductive layer 312 surface, and the first piezoelectric layer 311 is towards the of intracavitary side One conductive layer 312 is between the first reflectance coating and the first piezoelectric layer 311, and the first piezoelectric layer 311 is towards first of side outside chamber 312 surface of conductive layer does not have reflectance coating, and the second reflectance coating is located at second conductive layer of second piezoelectric layer 321 towards intracavitary side 322 surface, and the second conductive layer 322 of the second piezoelectric layer 321 towards intracavitary side is located at the second reflectance coating and the second piezoelectricity Between layer 321,322 surface of the second conductive layer of the second piezoelectric layer 321 towards side outside chamber does not have reflectance coating.
When there are several first openings in the first conductive layer, there is the second opening in the second conductive layer, the first reflectance coating Positioned at the first piezoelectric layer towards intracavitary surface, the second reflectance coating is located at the second piezoelectric layer towards intracavitary surface.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute Subject to the range of restriction.

Claims (12)

1. a kind of lightwave filter characterized by comprising
Cavity resonator structure, the cavity resonator structure include opposite the first cavity plate and the second cavity plate, and the first cavity plate includes the first pressure Electric layer and the first conductive layer, the first conductive layer are located at the first piezoelectric layer along the first cavity plate to the both side surface in the second cavity plate direction;
First voltage source, first voltage source are connect with the first conductive layer of the first piezoelectric layer two sides respectively, and first voltage source is suitable for Apply the first the first conductive layer for adjusting voltage to the first piezoelectric layer two sides, the long geometry of the chamber to compensate the cavity resonator structure Wave length shift caused by deviation.
2. lightwave filter according to claim 1, which is characterized in that the material of first piezoelectric layer includes piezoelectricity pottery Ceramic material, piezoelectricity glass material or piezoelectric inorganic compound-material.
3. lightwave filter according to claim 1, which is characterized in that the material of first conductive layer is electrically conducting transparent Material.
4. lightwave filter according to claim 1, which is characterized in that have several first to open in first conductive layer Mouthful, the bottom-exposed of first opening goes out the surface of the first piezoelectric layer.
5. lightwave filter according to claim 4, which is characterized in that first conductive layer is pectinate texture.
6. lightwave filter according to claim 1, which is characterized in that first piezoelectric layer with a thickness of 0.1 millimeter ~50 millimeters.
7. lightwave filter according to claim 1, which is characterized in that second cavity plate includes the second piezoelectric layer and the Two conductive layers, the second conductive layer are located at the second piezoelectric layer along the first cavity plate to the both side surface in the second cavity plate direction;The light wave Filter further include: the second voltage source, the second voltage source are connect with the second conductive layer of the second piezoelectric layer two sides respectively, the second electricity Potential source is suitable for applying the second the second conductive layer for adjusting voltage to the second piezoelectric layer two sides, and first voltage source and the second voltage source are suitable The wave length shift caused by the long geometrical deviation of the chamber for compensating the cavity resonator structure jointly.
8. lightwave filter according to claim 7, which is characterized in that the material of second piezoelectric layer includes piezoelectricity pottery Ceramic material, piezoelectricity glass material or piezoelectric inorganic compound-material.
9. lightwave filter according to claim 7, which is characterized in that the material of second conductive layer is electrically conducting transparent Material.
10. lightwave filter according to claim 7, which is characterized in that have several second in second conductive layer The bottom-exposed of opening, second opening goes out the surface of the second piezoelectric layer.
11. lightwave filter according to claim 10, which is characterized in that second conductive layer is pectinate texture.
12. lightwave filter according to claim 7, which is characterized in that second piezoelectric layer with a thickness of 0.1 millimeter ~50 millimeters.
CN201910345633.9A 2019-04-26 2019-04-26 Lightwave filter Pending CN109884837A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7485091B2 (en) 2021-01-13 2024-05-16 日本電信電話株式会社 Tunable Optical Filter

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Publication number Priority date Publication date Assignee Title
JPS58152201A (en) * 1982-03-08 1983-09-09 Matsushita Electric Ind Co Ltd Fabry-perot type optical modulator
WO2001059415A1 (en) * 2000-02-14 2001-08-16 Schlumberger Industries, S.A. Short fabry-perot filter with metallic layers
US20030086176A1 (en) * 2001-11-07 2003-05-08 Markus Tilsch Sandwiched thin film optical filter
US20060067840A1 (en) * 2004-09-24 2006-03-30 Takashi Kawakubo Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element
CN106707499A (en) * 2016-11-21 2017-05-24 苏州大学 Capacitance feedback type tunable Fabry-Perot filter
CN207965381U (en) * 2018-01-30 2018-10-12 中国科学院上海技术物理研究所 The high-accuracy assembly system of large caliber wide spectral region F-P tunable optic filters

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58152201A (en) * 1982-03-08 1983-09-09 Matsushita Electric Ind Co Ltd Fabry-perot type optical modulator
WO2001059415A1 (en) * 2000-02-14 2001-08-16 Schlumberger Industries, S.A. Short fabry-perot filter with metallic layers
US20030086176A1 (en) * 2001-11-07 2003-05-08 Markus Tilsch Sandwiched thin film optical filter
US20060067840A1 (en) * 2004-09-24 2006-03-30 Takashi Kawakubo Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element
CN106707499A (en) * 2016-11-21 2017-05-24 苏州大学 Capacitance feedback type tunable Fabry-Perot filter
CN207965381U (en) * 2018-01-30 2018-10-12 中国科学院上海技术物理研究所 The high-accuracy assembly system of large caliber wide spectral region F-P tunable optic filters

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7485091B2 (en) 2021-01-13 2024-05-16 日本電信電話株式会社 Tunable Optical Filter

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