CN109883954B - MOFs-based surface defect type photonic crystal sensor and manufacturing method thereof - Google Patents
MOFs-based surface defect type photonic crystal sensor and manufacturing method thereof Download PDFInfo
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- CN109883954B CN109883954B CN201910119145.6A CN201910119145A CN109883954B CN 109883954 B CN109883954 B CN 109883954B CN 201910119145 A CN201910119145 A CN 201910119145A CN 109883954 B CN109883954 B CN 109883954B
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 77
- 230000007547 defect Effects 0.000 title claims abstract description 40
- 239000012621 metal-organic framework Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000013105 nano metal-organic framework Substances 0.000 claims abstract description 32
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 24
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 13
- 230000000737 periodic effect Effects 0.000 claims abstract description 11
- 239000010453 quartz Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 239000013289 nano-metal-organic framework Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000004088 simulation Methods 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000001537 neural effect Effects 0.000 claims description 3
- 238000001338 self-assembly Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The invention relates to a surface defect type photonic crystal sensor based on MOFs (metal-organic frameworks) and a manufacturing method thereof, wherein the photonic crystal sensor is arranged from bottom to topSequentially comprises a substrate layer, a photonic crystal and a defect layer; the substrate layer is made of quartz; the photonic crystal is mesoporous TiO with different refractive indexes2A periodic structure alternately arranged with the dense layers of MOFs material; the defect layer is sequentially thin film TiO from bottom to top2Graphene and a loose nano MOFs porous structure; mesoporous TiO22The number of the periods which are alternately arranged with the compact nano MOFs material layer is n, and n is an integer which is more than 1. The loose nano MOFs porous structure is used as an absorption medium. The photonic crystal is a heterostructure photonic crystal with wide band gap photonic characteristics and high porosity. The thickness of the graphene is 2-5 nm. Film TiO2Is 20 nm. The layer thickness of the porous layer of bulk nano-MOFs is determined by the number of periods n of the photonic crystal.
Description
Technical Field
The invention relates to the field of sensor preparation, in particular to a novel MOFs-based surface defect type photonic crystal sensor and a manufacturing technology thereof.
Background
The photonic crystal generates photon energy bands and forbidden bands by the periodic arrangement of self-refractive index materials, when a surface defect state is introduced, the self structure of the photonic crystal is changed, and the light wavelength corresponding to the original forbidden band can pass through the photonic crystal to generate a reflection absorption peak. The concentration of gas or liquid can be detected through the change of the forbidden band reflection peak of the photonic crystal.
Disclosure of Invention
The invention aims to provide a manufacturing technology of a novel MOFs-based surface defect type photonic crystal sensor. The MOFs-based surface defect type photonic crystal sensor is mainly applied to detecting the type and concentration of gas or liquid, and the concentration of the gas or liquid is detected through the change of a photonic crystal forbidden band reflection peak. The invention not only expands the application range of the photonic crystal, but also provides guiding basis for the application research in the technical aspect of the photonic crystal sensing device.
The invention is realized by the following technical scheme. The invention firstly carries out the design of the surface defect type one-dimensional photonic crystal; then selecting an MOFs material with high adsorption property, and preparing the designed surface defect state one-dimensional photonic crystal structure on a silicon substrate layer by utilizing a mature film preparation technology; and finally, determining the type and concentration of the gas or liquid and the relation between the concentration and the reflection absorption peak of the photonic crystal by detecting the gas or liquid with different concentrations, thereby realizing the accurate detection of the type concentration of the gas or liquid.
Aiming at the defects in the prior art, the invention aims to provide a MOFs-based surface defect type photonic crystal sensor, which sequentially comprises a substrate layer, a photonic crystal and a defect layer from bottom to top;
the substrate layer is made of quartz; the photonic crystal is mesoporous TiO with different refractive indexes2A periodic structure alternately arranged with the dense nano MOFs material layer; the defect layer is sequentially thin film TiO from bottom to top2Graphene and a loose nano MOFs porous structure;
on the basis of the scheme, the mesoporous TiO2The number of the periods which are alternately arranged with the compact nano MOFs material layer is n, and n is an integer which is more than 1.
On the basis of the scheme, the loose nano MOFs porous structure is an absorption medium.
On the basis of the scheme, the photonic crystal is a heterostructure photonic crystal with wide band gap photonic characteristics and high porosity.
On the basis of the scheme, the thickness of the graphene is 2-5 nm.
On the basis of the scheme, the film TiO2Is 20 nm.
On the basis of the scheme, the layer thickness of the porous layer of the loose nano MOFs is determined according to the period number of the photonic crystal.
A manufacturing method of a MOFs surface defect type photonic crystal sensor comprises the following steps:
and step 1, designing a defect layer and a photonic crystal.
Step 1.1 numerical simulation of Photonic crystals
The numerical simulation of the photonic crystal is realized by utilizing a matrix transmission method and applying Matlab software, and the photonic crystal is mesoporous TiO2A periodic structure alternately arranged with the dense nano MOFs material layer;
step 1.2 Defect layer design
Simulating the defect layer by using BP neural algorithm and obtaining film TiO2The optimal thickness ratio of graphene to loose nano MOFs, wherein the defect layer is thin film TiO from bottom to top in sequence2Graphene and a porous structure of loose nano-MOFs.
Step 2, manufacturing MOFs surface defect type photonic crystals;
step 2.1, selecting quartz as a substrate layer, and preparing a photonic crystal on the quartz substrate layer, wherein the photonic crystal comprises a compact nanometer MOFs material layer with stability and good adsorption performance and a mesoporous TiO material layer2The photonic crystal is a periodic structure with different refractive indexes, and the heterostructure photonic crystal with wide band gap photonic characteristics and high porosity is prepared by utilizing a thin film preparation technology according to various parameters designed in the step 1.
Step 2.2 preparing a layer of film TiO on the compact MOFs material layer of the photonic crystal2On the thin film TiO2Preparing graphene, and finally preparing a loose nano MOFs porous layer on the graphene.
On the basis of the scheme, the film preparation technology comprises self-assembly, spin coating and a pulling method.
On the basis of the scheme, the mesoporous TiO2The periodicity of the alternating arrangement with the compact nanometer MOFs material layer is n, and n is an integer larger than 1;
on the basis of the scheme, the thickness of the graphene is 2-5nm, and the film TiO is2Is 20 nm.
Drawings
The invention has the following drawings:
FIG. 1 is a schematic diagram of a photonic crystal sensor structure.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, the MOFs-based surface-defect photonic crystal sensor sequentially comprises a substrate layer, a photonic crystal and a defect layer from bottom to top;
the substrate layer is made of quartz; the photonic crystal is mesoporous TiO with different refractive indexes2A periodic structure alternately arranged with the dense nano MOFs material layer; the defect layer is sequentially thin film TiO from bottom to top2Graphene and a loose nano MOFs porous structure;
on the basis of the scheme, the mesoporous TiO2The number of the periods which are alternately arranged with the compact nano MOFs material layer is n, and n is an integer which is more than 1.
On the basis of the scheme, the loose nano MOFs porous structure is an absorption medium.
On the basis of the scheme, the photonic crystal is a heterostructure photonic crystal with wide band gap photonic characteristics and high porosity.
On the basis of the scheme, the thickness of the graphene is 2-5 nm.
On the basis of the scheme, the film TiO2Is 20 nm.
On the basis of the scheme, the layer thickness of the porous layer of the loose nano MOFs is determined according to the period number of the photonic crystal.
A manufacturing method of a MOFs surface defect type photonic crystal sensor comprises the following steps:
1. design of defect layer and photonic crystal.
(1) Numerical simulation of photonic crystals
Numerical simulation of one-dimensional photonic crystals is realized by utilizing a matrix transmission method and applying Matlab software, wherein the photonic crystals are periodic structures formed by alternately arranging mesoporous TiO2 and compact nano MOFs material layers;
(2) defect layer design
Simulating the defect layer by using BP neural algorithm and obtainingFilm TiO2And the optimal thickness ratio of the Graphene to the loose nano MOFs is that the thickness of the Graphene (Graphene) in the defect layer is 2-5nm, and the loose nano MOFs porous structure is adopted as an absorption medium.
2. And manufacturing MOFs surface defect type photonic crystals.
(1) Selecting quartz as a substrate layer, preparing photonic crystals on the quartz substrate layer, and selecting a compact nanometer MOFs material layer and mesoporous TiO with stability and good adsorption performance on the quartz substrate2The material is used as a periodic structure with different refractive indexes, and a mature film preparation technology (self-assembly, spin coating or Czochralski method) is utilized to prepare the heterostructure photonic crystal with wide band gap photonic characteristics and high porosity according to various parameters designed according to the step 1.
(2) Preparing a layer of TiO 20nm thick on a compact MOFs material layer of photonic crystal2And preparing graphene with the thickness of 2-5nm on the graphene, and finally preparing a loose nano MOFs porous layer on the graphene, wherein the layer thickness is determined according to the period number of the photonic crystal.
Those not described in detail in this specification are within the skill of the art.
Claims (7)
1. The MOFs-based surface defect type photonic crystal sensor is characterized by comprising a substrate layer, a photonic crystal and a defect layer from bottom to top in sequence;
the substrate layer is made of quartz; the photonic crystal is mesoporous TiO with different refractive indexes2A periodic structure alternately arranged with the dense nano MOFs material layer; the defect layer is sequentially thin film TiO from bottom to top2Graphene and a loose nano MOFs porous structure;
the loose nano MOFs porous structure is an absorption medium;
the photonic crystal is a heterostructure photonic crystal with wide band gap photonic characteristics and high porosity.
2. The MOFs-based surface-deficient photonic crystal sensor of claim 1, characterized in thatCharacterized in that the mesoporous TiO2The number of the periods which are alternately arranged with the compact nano MOFs material layer is n, and n is an integer which is more than 1.
3. The MOFs surface defect type photonic crystal sensor according to claim 1, wherein the thickness of the graphene is 2-5nm, and the thin film TiO is2Is 20 nm.
4. The MOFs-based surface-defect photonic crystal sensor according to claim 2, wherein the layer thickness of the porous layer of loose nano-MOFs is determined according to the number of cycles of the photonic crystal.
5. A manufacturing method of a MOFs surface defect type photonic crystal sensor is characterized by comprising the following steps:
step 1 design of defect layer and photonic crystal
Step 1.1 numerical simulation of Photonic crystals
The numerical simulation of the photonic crystal is realized by utilizing a matrix transmission method and applying Matlab software, and the photonic crystal is mesoporous TiO2A periodic structure alternately arranged with the dense nano MOFs material layer;
step 1.2 Defect layer design
Simulating the defect layer by using BP neural algorithm and obtaining film TiO2The optimal thickness ratio of graphene to loose nano MOFs, wherein the defect layer is thin film TiO from bottom to top in sequence2Graphene and a loose nano MOFs porous structure;
step 2, manufacturing MOFs surface defect type photonic crystal
Step 2.1, selecting quartz as a substrate layer, and preparing a photonic crystal on the quartz substrate layer, wherein the photonic crystal comprises a compact nanometer MOFs material layer with stability and good adsorption performance and a mesoporous TiO material layer2The photonic crystal is a periodic structure with different refractive indexes, and a film preparation technology is utilized to prepare the heterostructure photonic crystal with wide band gap photonic characteristics and high porosity according to various parameters designed in the step 1;
step 2.2 preparing a layer of film TiO on the compact MOFs material layer of the photonic crystal2On the thin film TiO2Preparing graphene, and finally preparing a loose nano MOFs porous layer on the graphene;
the thickness of the graphene is 2-5nm, and the film is TiO2Is 20 nm.
6. The method of claim 5, wherein the thin film fabrication techniques include self-assembly, spin-coating, and Czochralski.
7. The method of claim 5, wherein the mesoporous TiO is based on MOFs surface defect type photonic crystal sensor manufacturing method2The number of the periods which are alternately arranged with the compact nano MOFs material layer is n, and n is an integer which is more than 1.
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CN110763653B (en) * | 2019-09-16 | 2023-12-29 | 深圳大学 | Terahertz gas sensor based on polymer Bluoch surface wave |
CN110736722B (en) * | 2019-10-29 | 2022-04-08 | 广州特种承压设备检测研究院 | Manufacturing method of graphene quantum dot composite material optical fiber gas sensor |
CN111895668A (en) * | 2020-07-02 | 2020-11-06 | 中国人民解放军火箭军工程大学 | Solar energy high-efficiency absorption microstructure |
CN112927769B (en) * | 2021-01-26 | 2022-05-24 | 华南理工大学 | MOFs material defect structure prediction method based on pore size distribution curve |
CN114280697B (en) * | 2021-11-29 | 2023-06-23 | 南京邮电大学 | MOF integrated photonic crystal microcavity sensor and preparation method |
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