CN109881181B

CN109881181B - Semiconductor processing equipment

Info

Publication number: CN109881181B
Application number: CN201910096134.0A
Authority: CN
Inventors: 王启光; 程诗垚
Original assignee: Yangtze Memory Technologies Co Ltd
Current assignee: Yangtze Memory Technologies Co Ltd
Priority date: 2019-01-31
Filing date: 2019-01-31
Publication date: 2021-05-18
Anticipated expiration: 2039-01-31
Also published as: CN109881181A

Abstract

The present invention relates to a semiconductor processing apparatus comprising: a processing chamber; the base is positioned in the processing chamber and used for placing a wafer to be processed, and the base can perform circular motion in the processing chamber; at least one tubular spray head, which is positioned in the processing chamber, is arranged above the base and is used for spraying process gas to the surface of the wafer, and the tubular spray head comprises a pipe body and air holes distributed along the pipe body; the vertical distance between the surface of the base and the tubular spray head is gradually reduced along with the gradually increasing distance between the surface of the base and the center of the rotating circle of the circular motion. The semiconductor processing equipment can improve the uniformity of semiconductor processing.

Description

Semiconductor processing equipment

Technical Field

The invention relates to the technical field of semiconductors, in particular to a semiconductor processing device.

Background

Atomic Layer Deposition (ALD) is an advanced thin film fabrication process, has high step coverage, is dense, is easy to control the element ratio of the thin film, and is widely applied to the advanced process of integrated circuits. In the preparation of a three-dimensional memory (3D NAND), the ALD process almost covers the preparation process of important functional layers such as a gate stack, a through hole filling layer, a high-K dielectric layer and the like, and the process stability of the ALD process has a decisive influence on the performance of the memory.

In the process of carrying out thin film deposition on a wafer in single-cavity atomic layer deposition equipment, the wafer rotates clockwise on a rotating platform in a cavity and continuously circulates through an adsorption area and a reaction area to finish atomic deposition.

In other semiconductor processing equipment, such as ion implantation tools, there is a need for the wafer to be rotated continuously.

In the rotation process of the wafer, the edge is easily abraded or damaged to cause particle pollution, and the problem of uneven film deposition thickness is easily caused to influence the subsequent process and even the product yield.

How to avoid the problem of edge damage of the wafer in the semiconductor processing process is a problem to be solved.

Disclosure of Invention

The invention aims to provide semiconductor processing equipment, which reduces the damage of a wafer and improves the uniformity of semiconductor processing.

An aspect of the present invention provides another semiconductor processing apparatus, including: a processing chamber; the base is positioned in the processing chamber and used for placing a wafer to be processed, and the base can perform circular motion in the processing chamber; at least one tubular spray head, which is positioned in the processing chamber, is arranged above the base and is used for spraying process gas to the surface of the wafer, and the tubular spray head comprises a pipe body and air holes distributed along the pipe body; the vertical distance between the surface of the base and the tubular spray head is gradually reduced along with the gradually increasing distance between the surface of the base and the center of the rotating circle of the circular motion.

Optionally, the base surface is inclined, and the height of each position of the base surface is gradually increased along with the distance from the center of the rotation circle.

Optionally, the normal of the base surface and the circular motion rotation axis are in the same plane.

Optionally, the inclination angle of the base surface is greater than 0 ° and less than 90 °.

Optionally, the bottom of the base is provided with at least two liftable support columns for adjusting the inclination of the surface of the base.

Optionally, the tubular spray head is horizontally arranged.

Optionally, the tubular nozzle is arranged in an inclined manner, and the height of the tubular nozzle is gradually reduced along with the distance from the tubular nozzle to the center of the rotating circle.

Optionally, the inclination angle of the tubular nozzle is greater than 0 ° and less than 90 °.

Optionally, the distribution density of the air holes of the tubular nozzle gradually increases with the distance from the center of the rotating circle.

Optionally, the air holes are uniformly distributed along the length direction of the tubular nozzle.

Optionally, the process chamber comprises an adsorption zone, a purge zone and a reaction zone; the adsorption area is used for introducing adsorption gas adsorbed on the surface of the wafer, the purging area is used for introducing purging gas to purge the surface of the wafer to remove redundant adsorption gas on the surface of the wafer, and the reaction area is used for introducing reaction gas to react with the gas adsorbed on the surface of the wafer to form a deposition film layer on the surface of the wafer.

Optionally, at least one tubular spray head is arranged in the adsorption area.

Optionally, the semiconductor processing equipment is used for performing an atomic layer deposition process.

The semiconductor processing equipment comprises a processing chamber, a base and a robust spray head positioned above the base, wherein the vertical distance between the surface of the base and the tubular spray head is gradually reduced. The distance between the surface of the wafer and the tubular nozzle changes along with the distance between the surface of the wafer and the center of the rotating circle to generate gradient difference, so that the difference caused by different contact time with gas can be compensated, the difference of the final semiconductor processing effect is compensated, for example, the thickness difference of the finally formed deposition film is compensated, and the film with uniform thickness is formed on the surface of the wafer.

Further, the base is obliquely arranged, the wafer is obliquely arranged on the surface of the base, compared with the horizontal arrangement, the distance between each point on the wafer and the center of the rotating circle is reduced, under the condition that the angular velocity of the circular motion of the wafer around the center of the rotating circle is not changed, the centripetal force applied to each position of the wafer is reduced, and the possibility that the wafer is damaged by the centripetal force is reduced. Moreover, when the wafer is obliquely placed, the action of the centripetal force applied to the wafer can be decomposed into a part of stress which is parallel to the surface direction of the wafer and a part of stress which is vertical to the surface direction of the wafer, so that part of stress generated by the centripetal force can be dispersed in the whole wafer, and further the stress action applied to the edge of the wafer is reduced, thereby avoiding the damage of the edge of the wafer, further reducing the problem of particle pollution in a processing chamber and improving the yield of products. Furthermore, the back of the wafer faces to the direction far away from the center of the rotating circle, so that stress generated by the centripetal force is supported by the back of the wafer, the influence on the front of the wafer can be reduced, and a device or a film layer formed on the front of the wafer is prevented from being influenced.

Further, the tubular spray head is obliquely arranged, so that the distance between the tubular spray head and the center of the rotating circle is gradually increased, the position close to the center of the rotating circle is far away from the air hole, and the abundance of the gas is low; the position far away from the center of the rotating circle is far away from the air hole, the abundance of the gas is large, and the difference caused by different contact time with the gas can be compensated, so that the difference of the finally formed deposition film layer is compensated.

Drawings

FIG. 1 is a schematic diagram of a semiconductor processing apparatus according to one embodiment of the present invention;

FIG. 2 is a schematic rear side view of a wafer atop a pedestal of a semiconductor processing apparatus in accordance with one embodiment of the present invention;

FIG. 3 is a schematic diagram of a semiconductor processing apparatus according to one embodiment of the present invention;

FIG. 4 is a schematic side view of a semiconductor processing apparatus pedestal and a tubular showerhead in accordance with one embodiment of the present invention;

FIG. 5 is a schematic structural view of a tubular showerhead in accordance with one embodiment of the present invention;

FIG. 6 is a schematic side view of a pedestal and a tubular showerhead of a semiconductor processing apparatus according to one embodiment of the present invention;

FIG. 7 is a side view of a pedestal and a tubular showerhead of a semiconductor processing apparatus according to one embodiment of the present invention.

Detailed Description

As described in the background, in the related art semiconductor processing apparatus, the edge of the wafer is easily damaged. The inventors have discovered that this is now common in semiconductor processing equipment where the wafer needs to be rotated. The research discovers that because the wafer constantly carries out circular motion in the semiconductor processing process, in the circular motion process, can receive the effect of centripetal force, the wafer edge of the position farthest away from the centre of a circle of rotation is the biggest with the position of the centre of a circle of rotation apart from the effect of centripetal force, receives the effect of centripetal force and is the biggest, because the rotational speed of wafer is great usually, causes great stress in the edge easily for this edge takes place to deform, thereby takes place damaged scheduling problem, causes the particle pollution in the treatment chamber.

Moreover, when the semiconductor processing equipment is atomic layer deposition equipment and the like and further needs to spray process gas to the surface of the rotating wafer, for the gas nozzles arranged in the radial direction, the angular velocities of the different positions of the wafer relative to the nozzles are the same, and the linear velocity gradually changes along with the difference between the position of the wafer and the distance between the centers of the rotating circles. The rotation linear speed of the edge of the wafer far from the center of the rotation circle is higher, the movement speed of the edge is higher relative to the spray head, the time for receiving gas is shorter, the thickness of a deposited film on the position of the wafer far from the center of the rotation circle is lower, the thickness of the deposited film on the surface of the wafer is uneven, and the thickness process and even the yield are influenced.

Accordingly, the inventors propose a new semiconductor processing apparatus to solve the above-described problems.

The following describes in detail a specific embodiment of a semiconductor processing apparatus according to the present invention with reference to the accompanying drawings.

Fig. 1 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention.

In this embodiment, the semiconductor processing apparatus includes a process chamber 100 and at least one pedestal 101 located within the process chamber 100. The susceptor 101 is used for placing a wafer to be processed, and the susceptor 101 is capable of performing a circular motion within the processing chamber 100. The surface of the base 101 is inclined, and the height of the surface of the base 101 is gradually increased along with the distance from the center of the circle of the circular motion.

The semiconductor processing equipment can be atomic layer deposition equipment, ion implantation equipment and other equipment which enable wafers to continuously perform circular motion in the processing process. In this embodiment, the semiconductor processing apparatus includes 6 susceptors 101, which can simultaneously place 6 wafers and perform semiconductor process on the 6 wafers. Each susceptor 101 may move in a clockwise or counterclockwise circular motion around the center of the process chamber, and the motion direction and speed of each susceptor 101 are the same to avoid collision.

The base 101 may be made of quartz, and has a surface with a groove corresponding to the size of the wafer for placing the wafer and fixing the wafer. In other embodiments, the surface of the susceptor 101 may be further provided with an electrostatic adsorption unit for electrostatically adsorbing a wafer placed on the surface of the susceptor 101. In other embodiments, the surface of the base 101 may further have air holes, and a wafer may be sucked to the surface of the base 101 by a vacuum unit. One skilled in the art can also fix the wafer by other methods to prevent the wafer from falling off the surface of the susceptor 101 during the rotation of the susceptor 101.

To avoid the wafer from detaching from the surface of the susceptor 101, it is also necessary to control the rotation rate of the susceptor 101. In one embodiment, the rotation rate of the base 101 in the circular motion is equal to or less than 240 cycles/minute.

Referring to fig. 2, a side view of a wafer 201 placed on a base 101 is shown.

The surface of the base 101 is inclined toward the center of the circular motion. In this embodiment, the whole base body of the base 101 is inclined, so that the surface of the base 101 is inclined. The bottom of the base 101 can be provided with at least two lifting support columns, and the overall inclination of the base 101 can be adjusted by adjusting the heights of the lifting support columns, so that the surface inclination of the base 101 can be adjusted.

In other embodiments, the bottom surface of the base 101 is horizontal, and the surface of the base 101 is inclined by the thickness variation of the body of the base 101. In this case, the inclination of the surface of the base 101 is fixed and cannot be adjusted.

In this embodiment, the normal line of the surface of the base 101 and the circular motion rotation axis L are in the same plane, so that the inclination of each base 101 is easy to control uniformly. The inclination angle alpha of the surface of the base 101 is larger than 0 degree and smaller than 90 degrees, and the inclination angle alpha is an included angle between the surface of the base and the horizontal plane. Preferably, alpha is more than 0 and less than or equal to 45 degrees. If the tilt angle is too large, the wafer 201 is likely to fall off the surface of the susceptor 101; in the case where the process gas is introduced above the susceptor 101 perpendicular to the horizontal plane, the wafer 201 is not in sufficient contact with the process gas because the inclination angle α is too large.

The base 101 performs a circular motion around the rotation center O, and the centripetal force applied to each position of the wafer 201 is proportional to the distance between the rotation center O and the base. Due to the inclined surface of the base 101, the wafer 201 is inclined, and the distance from the rotation center O at each position on the wafer 201 is reduced compared with the horizontal placement. When the wafer 201 is horizontally placed, the maximum distance L1 between the edge of the wafer 201 and the center O of the rotation is 2R + d, where 2R is the diameter of the wafer 201, and d is the shortest distance between the edge of the wafer and the center O of the rotation. When the tilt angle of the susceptor 101 is α, the maximum distance L2 between the edge of the wafer 201 and the rotation center O is 2Rcos α + d, L2 < L1. It can be seen that, since the wafer 201 is placed obliquely, the distance between each point on the wafer 201 and the rotation center O is reduced, and under the condition that the angular velocity of the circular motion of the wafer 201 around the rotation center O is not changed, the centripetal force applied to each position of the wafer 201 is reduced, thereby reducing the possibility that the wafer 201 is damaged by the centripetal force.

When the wafer is horizontally placed, the centripetal force acts on the wafer along the surface direction of the wafer towards the center of the rotation circle, which causes stress concentration and the edge of the wafer farthest from the center of the rotation circle, so that the edge is easily damaged. In the embodiment of the present invention, when the wafer 201 is placed obliquely, the centripetal force applied to the wafer 201 can be decomposed into a portion along the direction parallel to the surface of the wafer 201 and a portion along the direction perpendicular to the surface of the wafer, so that a portion of the stress generated by the centripetal force can be dispersed throughout the wafer, thereby reducing the stress applied to the edge of the wafer, avoiding the damage to the edge of the wafer 201, reducing the particle contamination problem in the processing chamber, and improving the yield of the product. Further, the back surface of the wafer 201 faces a direction away from the center O of the rotation, so that the stress generated by the centripetal force is applied by the back surface of the wafer 201, which can reduce the influence on the front surface of the wafer 201 and prevent the device or the film layer formed on the front surface of the wafer 201 from being influenced. .

Fig. 3 is a schematic structural diagram of a semiconductor processing apparatus according to another embodiment of the present invention.

In this embodiment, the semiconductor processing apparatus is an atomic layer deposition apparatus. The semiconductor processing apparatus includes: adsorption zone 301, purge zone 302, and reaction zone 303. The adsorption area 301 is used for introducing adsorption gas adsorbed on the surface of the wafer, the purging area 302 is used for introducing purging gas to purge the surface of the wafer to remove redundant gas on the surface of the wafer, and the reaction area 303 is used for introducing reaction gas to react with the adsorption gas adsorbed on the surface of the wafer to form a deposition film layer on the surface of the wafer. Between the adsorption zone 301 and the reaction zone 303, the purge zone 302 is provided.

In a specific embodiment, the atomic layer deposition apparatus is used to deposit a silicon oxide layer. The adsorption region 301 is used for introducing a silicon source gas, such as trimethylsilane and the like; introducing inert gases such as nitrogen or helium, argon and the like into the purging area 302 for purging; the reaction region 303 is used for introducing an oxidizing gas, such as oxygen, ozone, or the like.

The wafer is placed in the base 101, and silicon source gas is sequentially adsorbed through the adsorption area 301, stable chemical adsorption is formed on the surface of the wafer, redundant silicon source gas on the surface of the wafer is removed through purging through the purging area 302, then the wafer enters the oxidation area, and the oxidation gas reacts with the silicon source gas adsorbed on the surface of the wafer to form a silicon oxide layer. The susceptor 101 rotates one revolution to deposit a thin film on the surface of the wafer.

The semiconductor processing apparatus further comprises at least one tubular showerhead 310 disposed within the processing chamber 100 above the pedestal 101 for spraying process gas toward the wafer surface; the tubular spray head comprises a pipe body and air holes distributed along the pipe body.

In this embodiment, the tubular showerhead 310 is disposed in both the adsorption region 301 and the reaction region 303. Introducing an adsorption gas, such as a silicon source gas for forming a silicon oxide film, into the adsorption region 301 through the tubular showerhead 310; a reaction gas, for example, an oxidizing gas in forming a silicon oxide thin film, is introduced into the reaction region 303 through the tubular showerhead 310. And gas curtain devices are arranged among the zones and used for forming gas curtain isolation among the zones in the process of carrying out semiconductor processing so as to avoid interference of gases in different zones.

The length direction of the tubular nozzle 310 is along the radial direction of the circular motion of the base 101, and the length direction passes through the center of the rotating circle. And has a length greater than the diameter of the wafer to be placed on the susceptor 101 so that the gas can be sprayed all over the surface of the wafer.

Referring to FIG. 4, a side view of the susceptor 101 with the tubular showerhead 310 disposed thereon is shown.

The tubular showerhead 310 is generally a quartz tube, and is horizontally disposed with gas holes facing the susceptor 101 for spraying process gas onto the wafer 201 on the surface of the susceptor 101. The susceptor 101 rotates relative to the tubular nozzle 310 as it is continuously moved in a circular motion during the treatment process. The moving speed of the wafer 201 relative to the tubular showerhead 310 increases with the distance from the center O of rotation, and the increase in the moving speed relative to the tubular showerhead 310 means that the time of contact with the process gas sprayed from the tubular showerhead 310 is short. When the susceptor 101 is located in the adsorption region 301 (see fig. 3), the wafer 201 is away from the rotation center O and is in contact with the adsorbed gas for a short time, and the adsorption time is short; the time for the wafer 201 to contact the adsorbed gas near the rotation center O is long, and the adsorption time is long, which is beneficial to forming adsorption with larger density.

In this embodiment, since the base 101 is inclined toward the rotation center O, the vertical distance between the surface of the base 101 and the tubular showerhead 310 is gradually reduced as the distance from the rotation center O is gradually increased. The distance between the surface of the wafer 201 and the air holes of the tubular nozzle 310 is changed along with the distance from the center of the rotating circle, so that gradient difference is generated, the position close to the center of the rotating circle is far away from the air holes, and the abundance of the gas is low; the position far away from the rotating circle center O is far away from the air hole, the abundance of the gas is large, and the difference caused by different contact time with the gas can be compensated, so that the difference of the finally formed deposition film layer is compensated.

The inclination of the susceptor 101 and the flow rate of the gas ejected from the tubular showerhead 310 can be set reasonably, so that the gas adsorbed at each position of the wafer 201 is uniformly distributed, and the difference caused by the different relative speeds of the wafer 201 and the tubular showerhead 310 is eliminated.

In the embodiment of the present invention, the tubular showerhead 310 is disposed at least in the adsorption region 301. In one embodiment, a tubular showerhead 310 may be provided only in the adsorption zone 301, with a circular showerhead or other type of showerhead provided in other zones. One or more than two tubular nozzles 310 may be disposed in the adsorption region 301.

For the ald process, the uniformity of the distribution of the gas adsorbed by the wafer in the adsorption region 301 on the surface of the wafer determines the uniformity of the thickness of the deposited film layer formed on the surface of the wafer. Therefore, it is particularly necessary to overcome the problem of uneven gas adsorption caused by the difference in the relative movement speed of the wafer with respect to the showerhead when performing the circular movement in the adsorption region 301. Therefore, it is necessary to dispose the tubular ejection head 310 at least in the adsorption area 301. Two or more number of the tubular spray heads 310 may be provided in the adsorption region 301 as needed.

In the present embodiment, the tubular nozzle 310 may be disposed in all regions.

In this embodiment, the reaction zone 303 is also provided with the tubular showerhead 310. The reaction area 303 is used for injecting gas for reacting with adsorbed gas molecules adsorbed on the surface of the wafer, and the tubular nozzle 310 is arranged to improve the uniformity of the reaction between the wafer and the reaction gas at each position. However, in order to ensure that the adsorbed gas on the surface of the wafer completely reacts to form a deposited film, the amount of gas generally introduced into the reaction region 303 is large, and the space of the reaction region 303 is large, so that the time for the wafer to pass through the reaction region 303 is long, and even if the reaction uniformity at each position of the wafer is not uniform, the reaction time is long, and the concentration of the introduced reaction gas is large, so that the adsorbed gas molecules at each position of the surface of the wafer can completely participate in the reaction to form a deposited film. Therefore, in other embodiments, in order to reduce the cost, only circular or other types of nozzles may be disposed in the reaction region 303, without considering the problem of uneven abundance of gas at various positions in space.

The gas introduced into the purge region 302 is mainly used for purging the excess gas molecules adsorbed on the wafer surface, and nitrogen or other inert gases are generally used and do not participate in the reaction, so that the influence of uneven gas abundance does not exist. In this embodiment, the purge zone 302 is provided with a circular showerhead 320 (see FIG. 3); in other embodiments, other types of showerheads can be positioned in the purge region 302.

Referring to fig. 5, a schematic structural diagram of a tubular showerhead 310 according to an embodiment of the invention is shown.

In this embodiment, the tubular nozzle 310 includes a tubular body 311 and an air hole 312 formed in the tubular body 311. The cross section of the tube 311 of the tubular nozzle 310 is rectangular, and in other embodiments, the cross section of the tube 311 may also be circular or elliptical, and the like, which is not limited herein.

In this embodiment, the distribution density of the gas holes 312 gradually increases with increasing distance from the center of the rotation, that is, the amount of gas sprayed from the tubular nozzle 310 increases with increasing distance from the center of the rotation. In this embodiment, the sizes of the air holes 312 at the positions are the same, and the distribution density of the air holes 312 is adjusted by adjusting the number of the air holes 312 at different positions. In other embodiments, the different pore distribution densities can also be achieved by providing pores of different sizes at different locations. For example, the size of the air hole 312 gradually increases from a position close to the center of the rotation to a position far away from the center of the rotation.

By adjusting the density distribution of the gas holes 312, the gas abundance at the position far away from the center of the rotation circle can be improved, and the difference caused by the different contact time between different positions and the gas due to the difference of the relative movement speed of the wafer is further compensated, so that the difference of the semiconductor processing effect at different positions of the wafer is compensated.

In other embodiments, the air holes may be uniformly distributed along the length direction of the tubular nozzle, so that the amount of the ejected gas at each position is uniform.

Referring to FIG. 6, a schematic side view of a pedestal and a tubular showerhead of a semiconductor processing apparatus according to another embodiment of the present invention is shown.

In this particular embodiment, the semiconductor processing apparatus includes a process chamber; at least one pedestal 601 located in the processing chamber, wherein the pedestal 601 is used for placing a wafer 602 to be processed, and the pedestal 601 can perform circular motion in the processing chamber; at least one tubular showerhead 603 disposed in the processing chamber above the susceptor 601 for spraying process gas onto the surface of the wafer 602, the tubular showerhead 603 comprising a tube and gas holes distributed along the tube; the tubular nozzle 603 is disposed obliquely, and the height of the tubular nozzle 603 gradually decreases as the distance from the rotation center O gradually increases.

In this embodiment, the tubular nozzle 603 is disposed obliquely, and the surface of the base 601 is disposed horizontally, so that the vertical distance between the surface of the base 601 and the tubular nozzle 603 gradually decreases as the distance from the center O of the rotation gradually increases. The distance between the surface of the wafer 602 and the gas holes of the tubular nozzle 603 changes with the distance from the center of the rotation circle, so that gradient difference is generated, the position closer to the center of the rotation circle is farther away from the gas holes, and the abundance of the gas is lower; the position far away from the rotation center O is far away from the gas hole, and the gas abundance is large, so that the difference caused by different contact time with the gas can be compensated, thereby compensating the difference of the final semiconductor processing effect, for example, compensating the thickness difference of the finally formed deposition film, and forming the film with uniform thickness on the surface of the wafer 602.

The inclination of the tubular showerhead 603 and the flow rate of the gas ejected from the tubular showerhead 603 can be set reasonably, so that the gas adsorbed at each position of the wafer 602 is distributed uniformly, and the difference caused by the difference between the relative speeds of the wafer 602 at different positions and the tubular showerhead 603 is eliminated.

The inclination angle β of the tubular nozzle 603 is greater than 0 ° and smaller than 90 °, and the inclination angle α is an included angle between the length direction of the tubular nozzle 603 and a horizontal plane. Preferably, beta is more than 0 and less than or equal to 45 degrees. On one hand, the inclination angle cannot be too large due to the space limitation of the processing chamber; on the other hand, too large an angle also tends to make the tubular shower head 603 unstable.

Referring to FIG. 7, a schematic side view of a pedestal and a tubular showerhead of a semiconductor processing apparatus according to another embodiment of the present invention is shown.

In this embodiment, the tubular showerhead 703 and the surface of the base 701 are both disposed obliquely. The height of each position on the surface of the base 701 is gradually increased along with the gradual increase of the distance between the base and the rotating circle center O of the circular motion; the height of the tubular spray head 703 gradually decreases as the distance from the rotational center O of the circular motion gradually increases. The vertical distance between the surface of the susceptor 701 and the tubular showerhead 703 is gradually reduced as the distance from the center O of the rotation is gradually increased.

When the wafer 702 is placed on the base 701, the wafer 702 is tilted toward the center of the rotation circle. Compared with the case of horizontal placement, when the wafer 702 is placed obliquely, the distance between each point on the wafer 702 and the rotation center O is reduced, and when the angular velocity of the circular motion of the wafer 702 around the rotation center O is not changed, the centripetal force applied to each position of the wafer 702 is reduced, so that the possibility that the wafer 702 is damaged by the centripetal force can be reduced. Moreover, when the wafer 702 is placed obliquely, the centripetal force applied to the wafer 702 can be decomposed into a part along the direction parallel to the surface of the wafer 702 and a part along the direction perpendicular to the surface of the wafer 702, so that part of the stress generated by the centripetal force can be dispersed in the whole wafer 702, and the stress applied to the edge of the wafer can be reduced, thereby preventing the edge of the wafer 702 from being damaged, reducing the problem of particle pollution in the processing chamber, and improving the yield of products. Further, the back surface of the wafer 702 faces a direction away from the center O of the rotation, so that the stress generated by the centripetal force is applied by the back surface of the wafer 702, which can reduce the influence on the front surface of the wafer 702 and prevent the device or film layer formed on the front surface of the wafer 702 from being influenced.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims

1. A semiconductor processing apparatus, comprising:

a processing chamber;

the base is positioned in the processing chamber and used for placing a wafer to be processed, and the base can perform circular motion in the processing chamber;

at least one tubular spray head, which is positioned in the processing chamber, is arranged above the base and is used for spraying process gas to the surface of the wafer, and the tubular spray head comprises a pipe body and air holes distributed along the pipe body;

the vertical distance between the surface of the base and the tubular spray head is gradually reduced along with the gradually increasing distance between the surface of the base and the center of the rotating circle of the circular motion.

2. The semiconductor processing apparatus of claim 1, wherein the susceptor surface is sloped and has a height that gradually increases throughout the susceptor surface as a distance from the center of the rotation increases.

3. The semiconductor processing apparatus of claim 2, wherein a normal of the susceptor surface is in a same plane as the circular motion rotation axis.

4. The semiconductor processing apparatus of claim 2, wherein the angle of inclination of the susceptor surface is greater than 0 ° and less than 90 °.

5. The semiconductor processing apparatus of claim 2, wherein the base bottom is provided with at least two liftable supports for adjusting the inclination of the base surface.

6. The semiconductor processing apparatus of claim 1 or 2, wherein the tubular showerhead is horizontally disposed.

7. The semiconductor processing apparatus according to claim 1 or 2, wherein the tubular showerhead is disposed obliquely, and the height of the tubular showerhead is gradually decreased as a distance from the center of the rotation is gradually increased.

8. The semiconductor processing apparatus of claim 7, wherein the angle of inclination of the tubular showerhead is greater than 0 ° and less than 90 °.

9. The semiconductor processing apparatus of claim 1, wherein the distribution density of the gas holes of the tubular showerhead is gradually increased with a distance from the center of the rotation center.

10. The semiconductor processing apparatus of claim 1, wherein the gas holes are evenly distributed along a length of the tubular showerhead.

11. The semiconductor processing apparatus of claim 1, wherein the process chamber comprises an adsorption zone, a purge zone, and a reaction zone; the adsorption area is used for introducing adsorption gas adsorbed on the surface of the wafer, the purging area is used for introducing purging gas to purge the surface of the wafer to remove redundant adsorption gas on the surface of the wafer, and the reaction area is used for introducing reaction gas to react with the gas adsorbed on the surface of the wafer to form a deposition film layer on the surface of the wafer.

12. The semiconductor processing apparatus of claim 11, wherein at least one of the tubular showerheads is disposed within the adsorption region.

13. The semiconductor processing apparatus of claim 1, wherein the semiconductor processing apparatus is configured to perform an atomic layer deposition process.