CN109873087A - A kind of dot structure and display panel - Google Patents
A kind of dot structure and display panel Download PDFInfo
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- CN109873087A CN109873087A CN201711250382.3A CN201711250382A CN109873087A CN 109873087 A CN109873087 A CN 109873087A CN 201711250382 A CN201711250382 A CN 201711250382A CN 109873087 A CN109873087 A CN 109873087A
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Abstract
The invention discloses a kind of dot structure and display panels, and wherein dot structure includes multiple sub-pixels, include at least the first sub-pixel；First sub-pixel include the first electrode being cascading, the first optics cavity of layer structure and with the opposite polarity second electrode of first electrode；First optics cavity includes luminescent layer；First optics cavity further includes the first adjustment layer, and the material energy level of the first adjustment layer is determined according to the bright voltage of the first sub-pixel and the relationship of the material energy level of the first adjustment layer adjacent two layers.To adjust the injection barrier of carrier by the material relationship between energy levels changed between adjustment layer and adjacent two layers, to realize the adjustment to sub-pixel bright voltage.Since independent adjustment to a certain extent may be implemented in the energy level and mobility of semiconductor material, the driving voltage of sub-pixel will not be impacted.
Description
Technical field
The present invention relates to technical field of display panel more particularly to a kind of dot structures and display panel.
Background technique
Low ash rank colour cast is problem common in display panel.Specifically, in Organic Light Emitting Diode (Organic
Light-Emitting Diode, OLED) in device, implanted layer and transmission layer material can on horizontal and vertical two kinds of directions
Enough conductions, especially implanted layer, carrier mobility are very high.Fig. 1 is a kind of existing rgb pixel structural schematic diagram, such as Fig. 1
It is shown, since the bright voltage of three sub-pixels has differences, when lighting the sub-pixel B of high bright voltage, solid line as shown in figure 1
With shown in dotted line, when hole flows to blue luminescent layer, partial holes are through hole injection layer, hole transmission layer transverse conductance, Neng Gouwei
The bright bright voltage of microdot low sub-pixel G and sub-pixel R.It is a degree of that this will appear display panel in lower grayscale
Color distortion, this phenomenon are referred to as low ash rank colour cast.
In order to avoid the generation of low ash rank colour cast, exists in the prior art and mixed by reducing dopant in hole injection layer
It is miscellaneous to reduce the methods of hole injection layer transverse conductance ability than reducing electron mobility and thinned hole injection layer thickness, so
And thickness of the doping of dopant in hole injection layer than hole injection layer is thinned whether is reduced, although can improve
Low ash rank colour cast problem, but will increase the driving voltage of sub-pixel, influence the working performance of sub-pixel.
Summary of the invention
The present invention provides a kind of dot structure and display panel, improves to realize in the case where not influencing driving voltage
Low ash rank colour cast.
The embodiment of the present invention provides a kind of dot structure, including multiple sub-pixels, includes at least the first sub-pixel；Described
One sub-pixel include the first electrode being cascading, the first optics cavity of layer structure and with the first electrode polarity phase
Anti- second electrode；First optics cavity includes luminescent layer, and the luminescent layer is used in the first electrode and described second
It shines under the action of electrode；First optics cavity further includes the first adjustment layer, the material energy level of the first adjustment layer according to
The relationship of the material energy level of the bright voltage of first sub-pixel and the first adjustment layer adjacent two layers determines.
It optionally, further include the second sub-pixel；
It is higher than the picture of the original bright voltage of second sub-pixel for the original bright voltage of first sub-pixel
The material energy level of plain structure, the first adjustment layer is located between the material energy level of adjacent two layers；The original bright voltage is
It does not include the bright voltage of the first adjustment layer and identical first sub-pixel of optical cavity length.
Optionally, first optics cavity further includes the first implanted layer contacted with the first electrode, and, and it is described
Second implanted layer of second electrode contact；
When the first adjustment layer is located at the luminescent layer close to the side of the first electrode, the first adjustment layer
Adjacent two layers material energy level size relation and the luminescent layer and first implanted layer between material energy level it is big
Small relationship is consistent, and the size relation of the material energy level of the adjacent two layers is in the adjacent two layers close to the luminescent layer
The size relation of material energy level between one layer and one layer of the close first electrode；
When the first adjustment layer is located at the luminescent layer close to the side of the second electrode, the first adjustment layer
Adjacent two layers material energy level size relation and the luminescent layer and second implanted layer between material energy level it is big
Small relationship is consistent, and the size relation of the material energy level of the adjacent two layers is in the adjacent two layers close to the luminescent layer
The size relation of material energy level between one layer and one layer of the close second electrode.
Optionally, first optics cavity further includes the first biography between first implanted layer and the luminescent layer
Defeated layer；
When the first adjustment layer is located at the luminescent layer close to the side of the first electrode, the first adjustment layer
Carrier mobility be not less than first transport layer carrier mobility.
Optionally, first optics cavity further includes the second biography between second implanted layer and the luminescent layer
Defeated layer；
When the first adjustment layer is located at the luminescent layer close to the side of the second electrode, the first adjustment layer
Carrier mobility be not less than second transport layer carrier mobility.
Optionally, the potential barrier between the first adjustment layer adjacent two layers is greater than arbitrary neighborhood two in first optics cavity
Potential barrier between layer.
It optionally, further include the second sub-pixel；
It is lower than the picture of the original bright voltage of second sub-pixel for the original bright voltage of first sub-pixel
Plain structure, the material energy level of the first adjustment layer are higher than the maximum value of the material energy level of adjacent two layers.
Optionally, the primary cavity of a length of first optics cavity of the chamber of first optics cavity is long；The primary cavity is a length of
Do not include the optics cavity of adjustment layer chamber it is long.
It optionally, further include the second sub-pixel；
Second sub-pixel includes second adjustment layer, and the material energy level of the second adjustment layer is according to the described second sub- picture
The relationship of the material energy level of the bright voltage and second adjustment layer adjacent two layers of element determines.
The embodiment of the present invention provides a kind of display panel, including dot structure as described in any one of the above embodiments.
In conclusion the embodiment of the present invention provides a kind of dot structure and display panel, wherein dot structure includes multiple
Sub-pixel includes at least the first sub-pixel；First sub-pixel include the first electrode being cascading, layer structure first
Optics cavity and with the opposite polarity second electrode of first electrode；First optics cavity includes luminescent layer, and luminescent layer is used in the first electricity
It shines under the action of pole and second electrode；First optics cavity further includes the first adjustment layer, the material energy level of the first adjustment layer according to
The relationship of the material energy level of the bright voltage and the first adjustment layer adjacent two layers of first sub-pixel determines.Since rising for sub-pixel is bright
Voltage mainly between by bed boundary each in optics cavity carrier injection situation influenced, and between each bed boundary carrier injection situation
It is influenced, therefore can be adjusted by the material relationship between energy levels changed between adjustment layer and adjacent two layers by each interlayer potential barrier again
The injection barrier of carrier, to realize the adjustment to sub-pixel bright voltage.And for driving voltage, mainly by optics cavity
In each layer carrier mobility influence, since independence to a certain extent may be implemented in the energy level and mobility of semiconductor material
Adjustment, therefore the material by reasonably selecting adjustment layer, can reduce the influence caused by the driving voltage of sub-pixel.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without any creative labor, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is a kind of existing rgb pixel structural schematic diagram；
Fig. 2 is a kind of dot structure schematic diagram provided in an embodiment of the present invention；
Corresponding relationship of the Fig. 3 between a sub-pixel 1 provided in an embodiment of the present invention and original sub-pixel 1；
Fig. 4 is a kind of material relationship between energy levels schematic diagram of the first adjustment layer and adjacent two layers provided in an embodiment of the present invention；
Fig. 5 is 1 structural schematic diagram of a sub-pixel provided in an embodiment of the present invention；
Fig. 6 is a kind of the first optics cavity 12a original in special circumstances and its material energy level knot provided in an embodiment of the present invention
Structure schematic diagram；
Fig. 7 is 1 structural schematic diagram of a sub-pixel provided in an embodiment of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
It is described in detail to one step, it is clear that described embodiments are only a part of the embodiments of the present invention, rather than whole implementation
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
All other embodiment, shall fall within the protection scope of the present invention.
Fig. 2 is a kind of dot structure schematic diagram provided in an embodiment of the present invention, as shown in Fig. 2, including son in dot structure
Pixel 1.In Fig. 2, sub-pixel 1 be the first sub-pixel, including be cascading first electrode 11, the first optics cavity 12 and with
The opposite polarity second electrode 12 of first electrode 11.Wherein, the first optics cavity 12 is layer structure, and the first optics cavity 12 includes hair
Photosphere 121, luminescent layer 121 are used to shine under the action of first electrode 11 and second electrode 12；First optics cavity 12 further includes
The material energy level of the first adjustment layer 122, the first adjustment layer 122 is adjacent according to the bright voltage and the first adjustment layer 121 of sub-pixel 1
The relationship of two layers of material energy level determines, for adjusting the bright voltage of sub-pixel 1.
It should be understood that in practical applications, dot structure also may include the sub-pixels such as three, four, each sub-pixel
Light color that luminescent layer is issued is different, the first sub-pixel such as RGB (RGB) three-color pixel structure, in the embodiment of the present invention
It can be any sub-pixel relevant to low ash rank colour cast problem in tri- sub-pixels of RGB, e.g., since rising for blue subpixels is bright
In the case that overtension causes low ash rank individually to play brilliant blue sub-pixels, red sub-pixel can also shine slightly, at this point, first
Sub-pixel can be blue subpixels, be also possible to red sub-pixel.
In embodiments of the present invention, the bright voltage of sub-pixel 1 can be turned up or turned down by the first adjustment layer 122.Such as Fig. 2
Shown, dot structure further includes the presence of low ash rank colour cast between the second sub-pixel-pixel 2, with sub-pixel 1.Sub-pixel
2 include the third electrode 21, the second optics cavity 22 and the 4th electrodes 23 that are cascading, wherein the second optics cavity 22 includes
Second luminescent layer 221, for shining under the action of third electrode 21 and the 4th electrode 23.Wherein, the second optics cavity 22 may be used also
To include second adjustment layer (being not shown in Fig. 2), the low ash rank colour cast for improving dot structure to cooperate with the first adjustment layer together is asked
Topic.
It is higher than the dot structure of the original bright voltage of sub-pixel 2, the first adjustment for the original bright voltage of sub-pixel 1
The material energy level of layer 122 is located between the material energy level of adjacent two layers；Original bright voltage be do not include the first adjustment layer 122 and
The bright voltage of the identical sub-pixel of optical cavity length.Referring to FIG. 3, for a sub-pixel 1 provided in an embodiment of the present invention and original
Corresponding relationship between beginning sub-pixel 1, first electrode 11 and second having the same is electric between sub-pixel 1 and original sub-pixel 1
Pole 13, length having the same between the first optics cavity 12 and original first optics cavity 12a, difference are original first optics cavity
In 12a and do not have the first adjustment layer 122.The original bright voltage of sub-pixel of the embodiment of the present invention 1 is original son in Fig. 3
The bright voltage of pixel 1.In embodiments of the present invention, sub-pixel 2 may include second adjustment layer, can not also include the second tune
Flood, for the sub-pixel 2 with second adjustment layer, original bright voltage is identical as the corresponding relationship of pixel and sub-pixel 1,
And the sub-pixel 2 for not having second adjustment layer, original bright voltage is exactly the bright voltage of itself.
When the original bright voltage of sub-pixel 1 is higher than the original bright voltage of sub-pixel 2, sub-pixel 1 is under low ash rank
Also sub-pixel 2 can be made to shine while individually lighting sub-pixel 1 slightly, at this point it is possible to reduce sub- picture by the first adjustment layer 122
The bright voltage of element 1, the material energy level of the first adjustment layer 122 is located between the material energy level of adjacent two layers, as shown in figure 4, being
A kind of material relationship between energy levels schematic diagram of the first adjustment layer and adjacent two layers provided in an embodiment of the present invention, wherein layer A and layer B
For the adjacent two layers of the first adjustment layer 121, referring to FIG. 3, layer A and layer B can be arbitrary neighborhood in original first optics cavity 12a
Two layers.In original sub-pixel 1, injection barrier with higher between layer A and layer B, after the first adjustment layer 121 is added, first
The material energy level of adjustment layer 121 becomes the transition of injection barrier between layer A and layer B, to reduce carrier between interface
Injection barrier thereby reduces bright voltage.
Optionally, as shown in figure 5, for 1 structural schematic diagram of a sub-pixel provided in an embodiment of the present invention, in Fig. 5, first
Optics cavity 12 further includes the first implanted layer 123 contacted with first electrode 11, and, the second injection contacted with second electrode 13
Layer 124.Under normal circumstances, the first implanted layer 123 and the mobility with higher of the second implanted layer more than 124, and, the two material energy
The material energy level size relation having the same of grade and luminescent layer 121.By taking the first implanted layer 123 as an example, with luminescent layer 121 it
Between be also possible between be separated with other layers, under normal circumstances, from the first implanted layer 123 to the material energy of layer each luminescent layer 121
Grade may be incremented by successively or successively decrease, but in some special circumstances, it is also possible to occur part layer material energy level violated it is this
The rule of increasing or decreasing.
Optionally, when the first adjustment layer 122 is located at side of the luminescent layer 121 close to the first electrode 11, first is adjusted
Material energy level between the size relation and luminescent layer 121 and the first implanted layer 123 of the material energy level of the adjacent two layers of flood 122
Size relation it is consistent, the size relation of the material energy level of adjacent two layers is in adjacent two layers close to one layer of luminescent layer 122
And the size relation of the material energy level between one layer of first electrode 11.Fig. 6 is a kind of spy provided in an embodiment of the present invention
Original first optics cavity 12a and its material level structure schematic diagram in different situation, as shown in fig. 6, original the of original sub-pixel 1
In one optics cavity 12a, including the first implanted layer 123, layer a, luminescent layer 121, layer b, the second implanted layer 124, middle layer a be positioned at
Other layers between first implanted layer 123 and luminescent layer 121, layer b are between the second implanted layer 124 and luminescent layer 121
Other layers, corresponding, Fig. 6 also shows the first implanted layer 123, layer a, the material relationship between energy levels between luminescent layer 121, such as
Shown in Fig. 6, the material energy level of layer a is less than (usual each layer energy level of sub-pixel is negative value, and the absolute value of layer a energy level can be greater than first
The absolute value of implanted layer 123 and luminescent layer 121) the first implanted layer 123 and luminescent layer 121 material energy level, it is seen then that first injection
Layer 123, layer a, the material energy level between luminescent layer 121 do not constitute relationship incremented by successively, at this point, with the original sub-pixel
In first optics cavity 12 of 1 corresponding sub-pixel 1, the first adjustment layer 122 is set between layer a and the first implanted layer 123, material
Energy level is expected between layer a and the material energy level of the first implanted layer 123, and for that between layer a and luminescent layer 121, then will not set
Set the first adjustment layer 122.This is because carrier is flowed from the first implanted layer 123 in material level structure shown in Fig. 6
To luminescent layer 121, under this this direction, the potential barrier between layer a and luminescent layer 121 can't inject situation to current-carrying sub-interface and make
At adverse effect, the first adjustment layer 122, which therefore, between layer a and luminescent layer 121 is arranged, can't reduce the bright electricity of sub-pixel 1
Pressure.
Based on identical reason, when the first adjustment layer 122 is located at luminescent layer 121 close to the side of second electrode 13, the
Material between the size relation and luminescent layer 121 and the second implanted layer 124 of the material energy level of the adjacent two layers of one adjustment layer 122
The size relation of energy level is consistent, and the size relation of the material energy level of adjacent two layers is in adjacent two layers close to luminescent layer 121
The size relation of material energy level between one layer and one layer of close second electrode 13.
Optionally, the first optics cavity further includes the first transport layer between the first implanted layer and luminescent layer.Fig. 7 is this
1 structural schematic diagram of a sub-pixel that inventive embodiments provide, as shown in fig. 7, further including being located in the optics cavity 12 of sub-pixel 1
The first transport layer 125 between first implanted layer 123 and luminescent layer 121.It is close to be located at luminescent layer 121 in the first adjustment layer 122
When the side of first electrode 11, the carrier mobility of the first adjustment layer 122 is not less than the carrier mobility of the first transport layer 125
Rate.Further, the thickness of the first adjustment layer 122 and the sum of the thickness of the first transport layer 125 should be in the first optics cavity 12
The thickness of first transport layer in original first optics cavity 12a.In the case where other layers are constant, it can guarantee the first optics cavity 12
With length identical with original first optics cavity 12a, to ensure that the first optics cavity 12 to 121 luminous parameters of luminescent layer
Adjustment effect.In embodiments of the present invention, the primary cavity of a length of first optics cavity 12 of the chamber of the first optics cavity 12 is long, i.e., and original
The chamber of one optics cavity 12a is long.Meanwhile the carrier mobility of the first adjustment layer 122 is not less than the carrier of the first transport layer 125
Mobility ensure that the first optics cavity 12 has the carrier mobility not less than original first optics cavity 12a, avoid introducing
The raising of 122 pairs of 1 driving voltage of sub-pixel of the first adjustment layer.Based on identical reason, optionally, as shown in fig. 7, the first optics
Chamber 12 further includes the second transport layer 125 between the second implanted layer 124 and luminescent layer 121.It is located in the first adjustment layer 122
When luminescent layer 121 is close to the side of second electrode 13, the carrier mobility of the first adjustment layer 122 is not less than the second transport layer
Carrier mobility.
Optionally, the potential barrier between 122 adjacent two layers of the first adjustment layer is greater than in the first optics cavity 12 two layers of arbitrary neighborhood
Between potential barrier.That is, in original first optics cavity 12a corresponding with the first optics cavity 12, in potential barrier maximum two
Setting the first adjustment layer 122 is needed between layer to reduce the bright voltage of sub-pixel 1.It certainly, at the same time can also be in other layers
Between be also provided with adjustment layer, reduce the bright voltage of sub-pixel 1 simultaneously with the first adjustment layer 122.
In the above-described embodiments, the original bright voltage for being directed to sub-pixel 1 is higher than original bright electricity of sub-pixel 2
Pressure, sub-pixel 1 reduce bright voltage by the first adjustment layer 122 to improve the low ash rank colour cast between sub-pixel 1 and sub-pixel 2
Problem.It is readily apparent that, the original bright voltage that also will appear sub-pixel 1 is lower than the original bright voltage of sub-pixel 2, and causes
Between sub-pixel 1 and sub-pixel 2 the case where low ash rank colour cast problem, at this point it is possible to by improve sub-pixel 1 bright voltage with
Solve the problems, such as low ash rank colour cast.Optionally, the original bright voltage of sub-pixel 2 is lower than for the original bright voltage of sub-pixel 1
Dot structure, the material energy level of the first adjustment layer 122 is higher than the maximum value of the material energy level of adjacent two layers.With shown in Fig. 7
For sub-pixel 1, it is assumed that the material energy level between the first implanted layer 123, the first transport layer 125 and luminescent layer 121 is incremented by successively,
And the first adjustment layer 122 is provided between the first transport layer 125 and luminescent layer 121, the material energy of the first adjustment layer 122 at this time
Grade need to be greater than the material energy level of luminescent layer 121.In terms of carrier flow direction, first is increased after introducing the first adjustment layer 122
The interface injection barrier of carrier in transport layer 125, to improve the bright voltage of sub-pixel 1.
Optionally, in the specific implementation process, the first adjustment layer 122 not only can be only set in sub-pixel 1, may be used also
To be also provided with second adjustment layer in sub-pixel 2, the material energy level of second adjustment layer according to the bright voltage of the second sub-pixel and
The relationship of the material energy level of second adjustment layer adjacent two layers determines.Specifically, sub-pixel 1 is reduced by the first adjustment layer 122
Bright voltage while can also by second adjustment layer increase sub-pixel 2 bright voltage, alternatively, pass through the first adjustment layer
122 can also reduce the bright voltage of sub-pixel 2 by second adjustment layer while increasing the bright voltage of sub-pixel 1.
In conclusion the embodiment of the present invention provides a kind of dot structure, including multiple sub-pixels, the first sub- picture is included at least
Element；First sub-pixel include the first electrode being cascading, the first optics cavity of layer structure and with first electrode polarity
Opposite second electrode；First optics cavity includes luminescent layer, and luminescent layer under the action of first electrode and second electrode for sending out
Light；First optics cavity further includes the first adjustment layer, the material energy level of the first adjustment layer according to the bright voltage of the first sub-pixel and
The relationship of the material energy level of the first adjustment layer adjacent two layers determines.Since the bright voltage of sub-pixel is mainly by layer each in optics cavity
The influence of carrier injection situation between interface, and shadow of the injection situation of carrier by each interlayer potential barrier between each bed boundary
It rings, therefore the injection barrier of carrier can be adjusted by the material relationship between energy levels changed between adjustment layer and adjacent two layers, from
And realize the adjustment to sub-pixel bright voltage.And for driving voltage, mainly by the carrier mobility of layer each in optics cavity
Rate influences, since independent adjustment to a certain extent may be implemented in the energy level and mobility of semiconductor material, by reasonable
The material for selecting adjustment layer, can reduce the influence caused by the driving voltage of sub-pixel.
Based on the same technical idea, the embodiment of the present invention also provides a kind of display panel.The display panel contains above-mentioned
Dot structure provided by any embodiment controls the embodiment of the present invention by driving circuit and is mentioned in display panel work
The dot structure of confession shines to realize that image is shown.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of dot structure, including multiple sub-pixels, which is characterized in that
Including at least the first sub-pixel, first sub-pixel include the first electrode being cascading, layer structure
One optics cavity and with the opposite polarity second electrode of the first electrode；First optics cavity includes luminescent layer, described to shine
Layer under the action of the first electrode and the second electrode for shining；First optics cavity further includes the first adjustment
Layer, the material energy level of the first adjustment layer is according to the bright voltage and the first adjustment layer adjacent two of first sub-pixel
The relationship of the material energy level of layer determines.
2. dot structure as described in claim 1, which is characterized in that further include the second sub-pixel；
It is higher than the pixel knot of the original bright voltage of second sub-pixel for the original bright voltage of first sub-pixel
The material energy level of structure, the first adjustment layer is located between the material energy level of adjacent two layers；The original bright voltage is not wrap
Include the bright voltage of the first adjustment layer and identical first sub-pixel of optical cavity length.
3. dot structure as claimed in claim 2, which is characterized in that first optics cavity further includes and the first electrode
First implanted layer of contact, and, the second implanted layer contacted with the second electrode；
When the first adjustment layer is located at the luminescent layer close to the side of the first electrode, the phase of the first adjustment layer
The size of material energy level between the size relation and the luminescent layer and first implanted layer of adjacent two layers of material energy level is closed
Be it is consistent, the size relation of the material energy level of the adjacent two layers is in the adjacent two layers close to one layer of the luminescent layer
And the size relation of the material energy level between one layer of the first electrode；
When the first adjustment layer is located at the luminescent layer close to the side of the second electrode, the phase of the first adjustment layer
The size of material energy level between the size relation and the luminescent layer and second implanted layer of adjacent two layers of material energy level is closed
Be it is consistent, the size relation of the material energy level of the adjacent two layers is in the adjacent two layers close to one layer of the luminescent layer
And the size relation of the material energy level between one layer of the second electrode.
4. dot structure as claimed in claim 3, which is characterized in that first optics cavity further includes being located at first note
Enter the first transport layer between layer and the luminescent layer；
When the first adjustment layer is located at the luminescent layer close to the side of the first electrode, the load of the first adjustment layer
Flow the carrier mobility that transport factor is not less than first transport layer.
5. dot structure as claimed in claim 3, which is characterized in that first optics cavity further includes being located at second note
Enter the second transport layer between layer and the luminescent layer；
When the first adjustment layer is located at the luminescent layer close to the side of the second electrode, the load of the first adjustment layer
Flow the carrier mobility that transport factor is not less than second transport layer.
6. dot structure as claimed in claim 2, which is characterized in that the potential barrier between the first adjustment layer adjacent two layers is big
Potential barrier in first optics cavity between two layers of arbitrary neighborhood.
7. dot structure as described in claim 1, which is characterized in that further include the second sub-pixel；
It is lower than the pixel knot of the original bright voltage of second sub-pixel for the original bright voltage of first sub-pixel
Structure, the material energy level of the first adjustment layer are higher than the maximum value of the material energy level of adjacent two layers.
8. the method as described in claim 1, which is characterized in that a length of first optics cavity of the chamber of first optics cavity
Primary cavity is long；The primary cavity is a length of do not include adjustment layer optics cavity chamber it is long.
9. dot structure as claimed in any one of claims 1 to 8, which is characterized in that further include the second sub-pixel；
Second sub-pixel includes second adjustment layer, and the material energy level of the second adjustment layer is according to second sub-pixel
The relationship of the material energy level of bright voltage and the second adjustment layer adjacent two layers determines.
10. a kind of display panel, which is characterized in that including dot structure as claimed in any one of claims 1-9 wherein.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1602556A (en) * | 2002-03-28 | 2005-03-30 | 诺瓦莱德有限公司 | Transparent, thermally stable light-emitting component comprising organic layers |
| CN103094311A (en) * | 2011-10-31 | 2013-05-08 | 佳能株式会社 | Display apparatus |
| CN103219472A (en) * | 2013-04-19 | 2013-07-24 | 云南北方奥雷德光电科技股份有限公司 | Top-emitting organic light-emitting diode (OLED) device anode structure and preparation technology thereof |
| CN103545445A (en) * | 2012-07-13 | 2014-01-29 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103594657A (en) * | 2012-08-17 | 2014-02-19 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| US20150050764A1 (en) * | 2013-03-07 | 2015-02-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for manufacturing diode |
| CN204271141U (en) * | 2014-09-30 | 2015-04-15 | 合肥鑫晟光电科技有限公司 | Organic electroluminescence device and the display with this device |
| CN104882547A (en) * | 2014-02-28 | 2015-09-02 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104882545A (en) * | 2014-02-28 | 2015-09-02 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN105514291A (en) * | 2015-12-31 | 2016-04-20 | 固安翌光科技有限公司 | Organic light-emitting device |
| CN106531896A (en) * | 2016-12-13 | 2017-03-22 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display and manufacturing method thereof and organic light-emitting display device |
| CN106920895A (en) * | 2017-05-11 | 2017-07-04 | 安徽熙泰智能科技有限公司 | A kind of negative electrode of top radiation organic EL part and preparation method thereof |
| CN107093674A (en) * | 2017-06-09 | 2017-08-25 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel, preparation method and its display device |
-
2017
- 2017-12-01 CN CN201711250382.3A patent/CN109873087B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1602556A (en) * | 2002-03-28 | 2005-03-30 | 诺瓦莱德有限公司 | Transparent, thermally stable light-emitting component comprising organic layers |
| CN103094311A (en) * | 2011-10-31 | 2013-05-08 | 佳能株式会社 | Display apparatus |
| CN103545445A (en) * | 2012-07-13 | 2014-01-29 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103594657A (en) * | 2012-08-17 | 2014-02-19 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| US20150050764A1 (en) * | 2013-03-07 | 2015-02-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for manufacturing diode |
| CN103219472A (en) * | 2013-04-19 | 2013-07-24 | 云南北方奥雷德光电科技股份有限公司 | Top-emitting organic light-emitting diode (OLED) device anode structure and preparation technology thereof |
| CN104882545A (en) * | 2014-02-28 | 2015-09-02 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104882547A (en) * | 2014-02-28 | 2015-09-02 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN204271141U (en) * | 2014-09-30 | 2015-04-15 | 合肥鑫晟光电科技有限公司 | Organic electroluminescence device and the display with this device |
| CN105514291A (en) * | 2015-12-31 | 2016-04-20 | 固安翌光科技有限公司 | Organic light-emitting device |
| CN106531896A (en) * | 2016-12-13 | 2017-03-22 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display and manufacturing method thereof and organic light-emitting display device |
| CN106920895A (en) * | 2017-05-11 | 2017-07-04 | 安徽熙泰智能科技有限公司 | A kind of negative electrode of top radiation organic EL part and preparation method thereof |
| CN107093674A (en) * | 2017-06-09 | 2017-08-25 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel, preparation method and its display device |
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