CN109867805B - Preparation method of film material with infrared stealth function - Google Patents
Preparation method of film material with infrared stealth function Download PDFInfo
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- CN109867805B CN109867805B CN201910078337.7A CN201910078337A CN109867805B CN 109867805 B CN109867805 B CN 109867805B CN 201910078337 A CN201910078337 A CN 201910078337A CN 109867805 B CN109867805 B CN 109867805B
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Abstract
The invention provides a preparation method of a film material with an infrared stealth function, which comprises the following steps: 1) dispersing and mixing the nano extinction material and solvent resin, adding a certain amount of nano dielectric material, and uniformly mixing, wherein the solid content ratio of the nano extinction material to the resin to the nano dielectric material is (1-100): (1-100); 2) and (2) uniformly coating the product obtained in the step (1) on a flexible substrate in a coating mode, soaking the flexible substrate in a poor solvent of resin for a period of time, and finally drying to obtain the porous film material with the infrared stealth function. The infrared radiation rate of the target can be obviously reduced, the possibility of being detected by an infrared detector is effectively reduced, the infrared radiation rate is low, the compatibility is good, the process is simple, the repeatability is good, the equipment requirement is low, and the like.
Description
Technical Field
The invention relates to the field of functional film material preparation, in particular to a preparation method of a film material with an infrared stealth function.
Background
With the rapid development of the infrared detection system and the improvement of the detection precision, the safety and survival of military equipment and facilities are seriously threatened, particularly, the moving targets with high-power engines such as fighters, tanks, ships and warships and the like can generate high temperature during movement, so that the infrared radiation quantity of the military targets is greatly increased, strong radiation contrast is formed between the military targets and the background, the discovered probability is increased, and the stealth technology becomes the only technical means for solving the problems. Stealth materials are the key of stealth technology, are the indispensable material basis of stealth weapons, and all developed countries in the world are intensively researched and developed. Infrared stealth requires a reduction in the infrared radiation intensity of a target, and is achieved mainly by temperature reduction, infrared shielding, and the use of low infrared emissivity films or coatings.
Materials for thermal stealth should have the following basic characteristics: the thermal infrared emissivity meets the requirement or the temperature control capability is strong; has reasonable surface structure; the solar energy absorption rate is low; can be compatible with the stealth requirements of other frequency bands. Therefore, researches on various infrared low-radiation materials are carried out, and the film material is the key point of the domestic and overseas researches. The film material has the potential for infrared stealth, and has the greatest advantages of low emissivity, good heat insulation and low radiation. The film materials are mainly semiconductor doped films, metal films, plastic optical films, composite films, carbon films and boron nitride films. The films can reach extremely low radiance, and films with different radiances can be prepared by controlling parameters such as material carrier density and the like. At present, doped semiconductors such as SnO2, In2O3 and other materials have low emissivity, the semiconductor materials have stable thermal performance, the serious problem of radar wave reflection caused by metal film stealth materials is avoided, and the infrared stealth coating type materials with the largest application potential are prepared if the semiconductor nano materials are prepared. The coatings of semiconductor nanomaterials now under investigation consist of binders and nanoscale microfill materials. The structure formed by laminating multiple films has good magnetic conductivity and infrared radiance, and is effective in a wider frequency band. At present, military developed countries in the world are researching nano composite materials covering invisible light, infrared, centimeter wave, millimeter wave and other wave bands. The nano film or nano multilayer film material has excellent electromagnetic property and radiation property.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a preparation method of a film material with an infrared stealth function.
The invention adopts the following technical scheme:
a preparation method of a film material with an infrared stealth function comprises the following steps:
(1) dispersing and mixing the nano extinction material and solvent resin, adding a certain amount of nano dielectric material, and uniformly mixing, wherein the solid content ratio of the nano extinction material to the resin to the nano dielectric material is (1-100): (1-100);
(2) and (2) uniformly coating the product obtained in the step (1) on a flexible substrate in a coating mode, soaking the flexible substrate in a poor solvent of resin for a period of time, and finally drying to obtain the porous film material with the infrared stealth function.
Preferably, the nano extinction material is one or more of nano gold, nano gold wire, nano silver wire, nano copper wire, carbon nanofiber, carbon nanotube, graphene and football alkene.
Preferably, the resin in the solvent resin is one or more of polyurethane, epoxy resin, phenolic resin, polyvinylidene fluoride resin, polyester resin, polyacrylic resin and polycarbonate resin.
Preferably, the solvent used for dissolving the resin in the solvent resin is one or more of toluene, tetrahydrofuran, chloroform, tetrachloromethane, N-dimethylformamide and N, N-dimethylacetamide, and the solid content of the resin is 10% -80%.
Preferably, the nano dielectric material is one or more of nano monocrystalline silicon particles, nano polycrystalline silicon particles, nano silicon wires, nano titanium dioxide, nano aluminum trioxide, nano zinc oxide and nano calcium carbonate.
Preferably, the coating manner is spray coating, knife coating, spin coating, comma coating or slit coating.
Preferably, the flexible substrate is a polyethylene terephthalate film, a polyethylene naphthalate film, a polyimide film, a polyvinyl chloride film, a polycarbonate film, or a polyurethane film.
Preferably, the poor solvent of the resin is one or more of water, ethanol, methanol, n-hexane, cyclohexane, petroleum ether and ethyl acetate.
Preferably, the soaking time in the poor solvent of the resin in the step (2) is 3min-720 min; the drying temperature is 30-200 ℃, and the time is 6-360 min.
Preferably, the pore diameter of the surface of the prepared porous film material with the infrared stealth function is 3nm-30000 nm.
The basic principle of the invention is to mix infrared nanometer extinction material, nanometer dielectric material and the like and solvent type resin, then coat the mixture on a flexible substrate, soak the flexible substrate in solvent of insoluble resin, and dry the flexible substrate to prepare the flexible film with porous material, thus obtaining the film material with infrared stealth function. The infrared detector can effectively reduce the possibility of being detected by the infrared detector, and has the advantages of low radiance, good compatibility, simple process, good repeatability, low equipment requirement and the like.
The invention has the beneficial effects that:
the adopted raw materials are easy to obtain, and the prepared material film with the infrared stealth function is stable, low in emissivity and easy to store; the infrared radiation-proof glass has the advantages of simple preparation, low cost and good durability, can obviously reduce the infrared emissivity of a target, greatly reduces the possibility of detecting the target, can be used as infrared stealth combat uniforms of soldiers, infrared stealth materials, camouflage nets and tents, and has greater use value in the aspects of military stealth, civil heat-insulating glass and the like.
Detailed Description
The technical scheme of the invention is described and explained in more detail with reference to specific embodiments as follows:
example 1
1) Mixing the nano silver wire and a toluene solution of polyurethane into a container, and stirring; wherein, 60g of nano silver wire is added into 100g of polyurethane, and the solid content of the resin is 30 percent;
2) adding the nano silicon wires into the container in the step 1) and stirring; wherein 70g of nano silicon wire is added into 100g of polyurethane;
3) uniformly coating the product obtained in the step 2) on a flexible substrate in a spraying mode, wherein the flexible substrate is polyethylene glycol terephthalate;
4) soaking the film obtained in the step 3) in water for 10 min;
5) putting the product obtained in the step 4) into an oven for drying, and drying to prepare a porous material flexible film with the aperture of 100nm to obtain a film material with the infrared stealth function; wherein the drying is vacuum drying at 50 deg.C for 60 min.
The infrared transmittance of the prepared film on the substrate is 10%, and the possibility that the prepared film is detected by an infrared detector can be effectively reduced.
Example 2
1) Mixing the nano gold wires and a tetrahydrofuran solution of epoxy resin into a container, and stirring; wherein 60g of nano gold wire is added into 100g of epoxy resin, and the solid content of the resin is 20 percent;
2) adding nano aluminum trioxide into the container in the step 1) and stirring; wherein 50g of nano aluminum trioxide is added into 100g of epoxy resin;
3) uniformly coating the product obtained in the step 2) on a flexible substrate in a spraying mode, wherein the flexible substrate is polyethylene glycol terephthalate;
4) soaking the film obtained in the step 3) in ethanol for 60 min;
5) putting the product obtained in the step 4) into an oven for drying, and drying to prepare a porous material flexible film with the aperture of 600nm to obtain a film material with the infrared stealth function; wherein the drying is vacuum drying at 100 deg.C for 90 min.
The infrared transmittance of the prepared film on the substrate is 8%, and the possibility that the prepared film is detected by an infrared detector can be effectively reduced.
Example 3
1) Mixing a nano gold wire and a toluene solution of polyvinylidene fluoride resin into a container, and stirring; wherein 50g of nano gold wires are added into 100g of polyvinylidene fluoride resin, the solid content of the resin is 30 percent, and the solvent is toluene;
2) adding the nano titanium dioxide into the container in the step 1) and stirring; wherein 50g of nano titanium dioxide is added into 100g of polyvinylidene fluoride resin;
3) uniformly coating the product obtained in the step 2) on a flexible substrate in a spin coating mode, wherein the flexible substrate is a poly-p-polyimide film;
4) soaking the film obtained in the step 3) in normal hexane for 100 min;
5) putting the product obtained in the step 4) into an oven for drying, and drying to prepare a porous material flexible film with the aperture of 400nm to obtain a film material with the infrared stealth function; wherein the drying is vacuum drying at 90 deg.C for 100 min.
The infrared transmittance of the prepared film on the substrate is 12%, and the possibility that the prepared film is detected by an infrared detector can be effectively reduced.
Example 4
1) Mixing the nano gold thread and a toluene solution of polyacrylic resin into a container, and stirring; wherein 50g of nano gold wire is added into 100g of polyacrylic resin, and the solid content of the resin is 70%;
2) adding the nano silicon wires into the container in the step 1) and stirring; wherein 50g of nano silicon wire is added into 100g of polyacrylic resin;
3) uniformly coating the product obtained in the step 2) on a flexible substrate in a spin coating mode, wherein the flexible substrate is a poly-p-polyimide film;
4) soaking the film obtained in the step 3) in petroleum ether for 100 min;
5) putting the product obtained in the step 4) into an oven for drying, and drying to prepare a porous material flexible film with the aperture of 600nm to obtain a film material with the infrared stealth function; wherein the drying is vacuum drying at 120 deg.C for 130 min.
The infrared transmittance of the prepared film on the substrate is 7%, and the possibility that the prepared film is detected by an infrared detector can be effectively reduced.
Example 5
1) Mixing the carbon nano tube and a trichloromethane solution of polyurethane into a container, and stirring; wherein 40g of carbon nano tube is added into 100g of polyurethane, and the solid content of the resin is 60 percent;
2) adding nano zinc oxide into the container in the step 1) and stirring; wherein 70g of nano zinc oxide is added into 100g of polyurethane;
3) uniformly coating the product obtained in the step 2) on a flexible substrate in a spin coating mode, wherein the flexible substrate is a poly-p-polyimide film;
4) soaking the film obtained in the step 3) in ethanol for 150 min;
5) putting the product obtained in the step 4) into an oven for drying, and drying to prepare a porous material flexible film with the aperture of 1000nm to obtain a film material with the infrared stealth function; wherein the drying is vacuum drying at 150 deg.C for 200 min.
The infrared transmittance of the prepared film on the substrate is 13%, and the possibility that the prepared film is detected by an infrared detector can be effectively reduced.
Example 6
1) Mixing graphene and N, N-dimethylformamide solution of phenolic resin into a container, and stirring; wherein 40g of graphene is added into 100g of phenolic resin, and the solid content of the resin is 30%;
2) adding nano zinc oxide into the container in the step 1) and stirring; wherein 70g of nano zinc oxide is added into 100g of phenolic resin;
3) uniformly coating the product obtained in the step 2) on a flexible substrate in a blade coating mode, wherein the flexible substrate is polyvinyl chloride;
4) soaking the film obtained in the step 3) in a solvent, wherein the solvent is methanol, and the soaking time is 150 min;
5) putting the product obtained in the step 4) into an oven for drying, and drying to prepare a porous material flexible film with the aperture of 1600nm to obtain a film material with the infrared stealth function; wherein the drying is vacuum drying at 100 deg.C for 150 min.
The infrared transmittance of the prepared film on the substrate is 9%, and the possibility that the prepared film is detected by an infrared detector can be effectively reduced.
Example 7
1) Mixing the carbon nanofibers and a tetrachloromethane solution of polyester resin in a container, and stirring; wherein 1g of carbon nanofiber is added into 100g of polyester resin, and the solid content of the resin is 10 percent;
2) adding the nano monocrystalline silicon particles into the container in the step 1) and stirring; wherein 100g of polyester resin is added into 100g of nano monocrystalline silicon particles;
3) uniformly coating the product obtained in the step 2) on a flexible substrate in a comma coating mode, wherein the flexible substrate is a polycarbonate film;
4) soaking the film obtained in the step 3) in a solvent, wherein the solvent is ethyl acetate, and the soaking time is 3 min;
5) and (3) putting the product obtained in the step (4) into an oven for drying, wherein the drying temperature is 30 ℃ and the drying time is 360min, so that the film material with the infrared stealth function is prepared, and the possibility that the film material is detected by an infrared detector can be effectively reduced.
Example 8
1) Mixing the nano copper wire and the N, N-dimethylacetamide solution of the polycarbonate resin into a container, and stirring; wherein 100g of polycarbonate resin is added into 100g of nano copper wire, and the solid content of the resin is 80 percent;
2) adding the nano titanium dioxide into the container in the step 1) and stirring; wherein 100g of polycarbonate resin is added with 1g of nano titanium dioxide;
3) uniformly coating the product obtained in the step 2) on a flexible substrate in a slit coating mode, wherein the flexible substrate is a polyurethane film;
4) soaking the film obtained in the step 3) in a solvent, wherein the solvent is cyclohexane, and the soaking time is 720 min;
5) and (3) putting the product obtained in the step (4) into an oven for drying, wherein the drying temperature is 200 ℃ and the drying time is 6min, so that the film material with the infrared stealth function is prepared, and the possibility that the film material is detected by an infrared detector can be effectively reduced.
It is to be understood that the above description is not intended to limit the present invention, and the present invention is not limited to the above examples, and those skilled in the art may make modifications, alterations, additions or substitutions within the spirit and scope of the present invention.
Claims (1)
1. A preparation method of a film material with an infrared stealth function is characterized by comprising the following steps:
(1) dispersing and mixing the nano extinction material and solvent resin, adding a certain amount of nano dielectric material, and uniformly mixing, wherein the solid content ratio of the nano extinction material to the resin to the nano dielectric material is (60-100): 100: (50-100);
(2) uniformly coating the product obtained in the step (1) on a flexible substrate in a coating mode, then soaking the flexible substrate in a poor solvent of resin for a period of time, and finally drying to obtain the porous film material with the infrared stealth function;
the nano extinction material is a nano silver wire;
the resin in the solvent resin is one or more of polyurethane, epoxy resin, phenolic resin, polyvinylidene fluoride resin, polyester resin, polyacrylic resin and polycarbonate resin;
the solvent used for dissolving the resin in the solvent resin is one or more of toluene, tetrahydrofuran, trichloromethane, tetrachloromethane, N-dimethylformamide and N, N-dimethylacetamide, and the solid content of the resin is 10-80%;
the nano dielectric material is one or more of nano monocrystalline silicon particles, nano polycrystalline silicon particles, nano silicon wires, nano titanium dioxide, nano aluminum trioxide, nano zinc oxide and nano calcium carbonate;
the coating mode is spray coating, blade coating, spin coating, comma coating or slit coating;
the flexible substrate is a polyethylene terephthalate film, a polyethylene naphthalate film, a polyimide film, a polyvinyl chloride film, a polycarbonate film or a polyurethane film;
the poor solvent of the resin is one or more of water, ethanol, methanol, n-hexane, cyclohexane, petroleum ether and ethyl acetate;
soaking in the poor solvent of the resin in the step (2) for 3-720 min; the drying temperature is 30-200 ℃, and the time is 6-360 min;
the aperture of the surface of the prepared porous film material with the infrared stealth function is 3nm-30000 nm.
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| CN110305428B (en) * | 2019-06-24 | 2021-05-14 | 北京工业大学 | Preparation method of large-area flexible film with ion rectification effect |
| CN110318257A (en) * | 2019-08-06 | 2019-10-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nano compound film with infrared absorption function and preparation method thereof and application |
| CN111205646B (en) * | 2020-03-20 | 2022-09-09 | 株洲时代华鑫新材料技术有限公司 | Black matte polyimide film and preparation method thereof |
| CN115637089A (en) * | 2021-07-18 | 2023-01-24 | 云南光电辅料有限公司 | Infrared stray radiation extinction material and preparation method thereof |
| CN113583555B (en) * | 2021-08-04 | 2022-04-05 | 浦诺菲新材料有限公司 | Polyurethane coating liquid, paint surface protective film and preparation method |
| CN114106654A (en) * | 2021-11-24 | 2022-03-01 | 中昊北方涂料工业研究设计院有限公司 | Infrared low-emissivity coating without metal filler |
| CN114805898A (en) * | 2022-05-05 | 2022-07-29 | 合肥中隐新材料有限公司 | Infrared self-adaptive flexible bending stealth material and preparation method thereof |
| CN115627119B (en) * | 2022-10-11 | 2023-06-20 | 航天特种材料及工艺技术研究所 | Light temperature-resistant heat-insulating stealth coating, coating and preparation method thereof |
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