CN109867441A - A kind of float glass process prepares the device and method of TFT-LCD glass substrate - Google Patents
A kind of float glass process prepares the device and method of TFT-LCD glass substrate Download PDFInfo
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- CN109867441A CN109867441A CN201910328174.3A CN201910328174A CN109867441A CN 109867441 A CN109867441 A CN 109867441A CN 201910328174 A CN201910328174 A CN 201910328174A CN 109867441 A CN109867441 A CN 109867441A
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- glass
- sulfur dioxide
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- tin
- annealing
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- 239000011521 glass Substances 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000006124 Pilkington process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 14
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims abstract description 62
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000000137 annealing Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000006066 glass batch Substances 0.000 claims abstract description 8
- 238000000465 moulding Methods 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 4
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 4
- 238000005273 aeration Methods 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 claims 1
- 238000000227 grinding Methods 0.000 abstract description 10
- 229910001413 alkali metal ion Inorganic materials 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 11
- 239000011734 sodium Substances 0.000 description 8
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 4
- 229910052939 potassium sulfate Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052938 sodium sulfate Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000007832 Na2SO4 Substances 0.000 description 2
- 229910003849 O-Si Inorganic materials 0.000 description 2
- 229910003872 O—Si Inorganic materials 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- -1 oxonium ion Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910001414 potassium ion Inorganic materials 0.000 description 2
- 235000011151 potassium sulphates Nutrition 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Glass Compositions (AREA)
Abstract
The present invention relates to the device and methods that a kind of float glass process prepares TFT-LCD glass substrate, it is characterised in that: increases sulfur dioxide aeration step between molding and annealing room, comprising the following steps: 1. select the glass batch of following weight fraction ratio: SiO2 58~63%, B2O3 8~11%, Al2O3 14~18%, CaO 3~8%, MgO 0~4%, SnO 0 ~ 1%, ZnO 0~10% carry out glass batch investment kiln to be melting into glass metal, and glass metal subsequently enters tin groove forming into glass tape；2. blowing sulfur dioxide gas to the tin face of glass tape and air surface by one group of sulfur dioxide air-breather, subsequent glass tape enters annealing kiln annealing.The invention has the advantages that 1. equipment are simple, operation easy to produce；2. Na can be effectively removed+、K+Equal alkali metal ions, while the depth of TFT-LCD glass substrate tin-riched layer is effectively reduced again；3. reducing face grinding below to the amount of grinding of tin-riched layer, formation efficiency is improved.
Description
Technical field
The invention belongs to glass preparation fields, are related to TFT-LCD glass preparation field, and in particular to a kind of float glass process preparation TFT-
The device and method of LCD glass substrate.
Background technique
Various raw material are added in kiln in the technique of float process TFT-LCD glass substrate, by being heated to
1600 DEG C or more carry out being fused into glass metal, and glass metal enters molten tin bath from kiln outflow, through drawing above molten metal tin liquor
Side machine travel, tiling spread molding out, and glass metal is molded into glass tape along the lead advance of edge machine.For TFT-LCD glass
For glass, the temperature (about 1100 DEG C) that glass metal enters molten tin bath is higher by about 100 DEG C than common soda lime glass, is cooled to and leaves molten tin bath
About 700 DEG C of temperature when into annealing kiln；Within the said temperature range, glass is in liquid condition, and inner ion movement is active,
Ion exchange and diffusion velocity are fast, sodium, the potash gold being on the one hand mingled with into TFT-LCD glass raw material and in production technology
It is more active to belong to ion, is easily collected on the surface of glass, forms free metal ion；On the other hand in high temperature (600-1150
DEG C) under the conditions of, tin is easily oxidized, the micro amount of oxygen contained in molten tin bath, Sn generated2+、Sn4+It penetrates into inside glass, is formed
Tin-riched layer, Sn2+、Sn4+Aggregation to can glass refractive index and transmitance etc. have an impact.
TFT-LCD glass substrate is the carrier of liquid crystal display panel, and production liquid crystal display panel needs to lead on TFT-LCD glass substrate
It crosses the techniques such as physical vapor deposition, chemical vapor deposition, etching and plates circuit.Liquid crystal display panel, which needs to be powered during display, makes liquid
Crystalline substance is rotated, and forming display picture if free metal ion is gone in route will cause electric pole short circuit.So float glass process
The requirement of TFT-LCD glass substrate is no alkali borosilicate glass, and is managed to the tin-riched layer of glass substrate.
In actual production, Na is strictly managed in terms of raw material+、K+The addition of equal alkali metal oxides, but in other former materials
Some Na can be inevitably mingled in the production of material, process+、K+Equal alkali metal oxides.In order to avoid float glass process TFT-LCD glass
Influence of the substrate surface tin-riched layer to glass quality, it is general using atmosphere in control molten tin bath, such as it is passed through reducing gas H2, reduce and seep
Tin amount or the method for using face grinding in back segment, the tin-riched layer of glass surface is ground away.
Summary of the invention
The purpose of the invention is to remove the Na in TFT-LCD glass substrate+、K+Equal alkali metal ions are to reduce TFT-
The tin-riched layer of LCD glass, the amount of grinding for reducing the grinding of back segment face improve production efficiency, provide a kind of float glass process preparation TFT-LCD
The device and method of glass substrate.
To achieve the goals above, The technical solution adopted by the invention is as follows:
A kind of float glass process prepares the device of TFT-LCD glass substrate, including kiln, molten tin bath, edge machine, annealing kiln, it is characterised in that:
One group of (at least 4) sulfur dioxide air-breather is installed between molten tin bath and annealing kiln, the sulfur dioxide air-breather by
TFT-LCD glass tape air surface (on) metal cap and tin face (under) metal cap and one group of sulfur dioxide blow afloat pipeline composition.
A kind of method that float glass process prepares TFT-LCD glass substrate, including existing float glass process: frit is mixed
It closes, be melted, molding, annealing, it is characterised in that: increasing sulfur dioxide aeration step between molding and annealing room, including following
Step:
1. selecting the glass batch of following weight fraction ratio: SiO2 58~63%, B2O3 8~11%, Al2O3 14~18%, CaO
3~8%, MgO 0~4%, SnO 0 ~ 1%, ZnO 0~10% carry out glass batch investment kiln to be melting into glass metal, glass
Liquid subsequently enters tin groove forming into glass tape；
2. blowing sulfur dioxide gas to the tin face of glass tape and air surface by one group of sulfur dioxide air-breather, (sulfur dioxide is logical
Enter amount according to the Na contained in glass tape+、K+Depending on the amount of equal alkali metal ions), subsequent glass tape enters annealing kiln annealing.
Further, the intake of each metal cap sulfur dioxide is 1-1.5m3/h in the sulfur dioxide air-breather.
The mechanism of action: the main component silica of glass is after high temperature melting, oxonium ion polyhedron (triangle body and four sides
Body) between apex angle be connected to form the continuous network of three-dimensional space, but its arrangement be it is unordered, in the reticular structure that silicon oxygen bond is formed
In, R ion is embedded in centre, usually sodium ion, potassium ion etc..
SO2+1/2O2+ 2(K-O-Si)=- Si-O-Si -+K2SO4
SO2+1/2O2+ 2(Na-O-Si)=- Si-O-Si -+Na2SO4
SO2+ 2Na++2O-2= Na2SO4
SO2+ 2K++2O-2= K2SO4
In the Na that TFT-LCD ribbon surfaces dissociate+、K+It reacts respectively with sulfur dioxide, generates sodium sulphate, potassium sulfate,
Sodium sulphate and potassium sulfate film (can wipe) are formed, which is attached to the surface of glass tape, it is possible to reduce glass tape and transmission
Friction between idler wheel is reduced and is scratched.It is located at the Na on glass tape surface layer simultaneously+、K+It constantly reduces, the strand on glass tape surface layer
The on-link mode (OLM) of "-Si-O-Si-" is formed, and the reticular structure that silicon oxygen bond is formed arranges precision, improves ribbon surfaces
Intensity, enhance scratch resistant ability.Due to Na+, K+ Ion transfer in the netted strand of glass, diffusion, glass is caused
Form vacancy in glass molecular network, and the tin-riched layer of the surface aggregation in glass tape, wherein containing Sn2+、Sn4+, can fill up
Vacancy moves to inside glass, so that the Sn of glass surface2+、Sn4+It reduces, the depth of tin-riched layer can be effectively reduced, reduce
Face grinding below improves formation efficiency to the amount of grinding of tin-riched layer.
Advantages of the present invention: 1. equipment are simple, operation easy to produce；2. Na can be effectively removed+、K+Equal alkali metal ions, together
When effectively reduce the depth of TFT-LCD glass substrate tin-riched layer again；3. the amount of grinding to tin-riched layer is ground in face below for reduction,
Improve formation efficiency.
Detailed description of the invention
Fig. 1 is sulfur dioxide access equipment schematic diagram；
Fig. 2 is the oxygen cycle schematic diagram in molten tin bath；
Fig. 3 is microscopic glass network structure；
Fig. 4 is network of silica structure chart in glass.
Specific embodiment
Embodiment 1
A kind of float glass process prepares the device of TFT-LCD glass substrate, including kiln, molten tin bath, edge machine, one group of sulfur dioxide ventilation dress
It sets, annealing kiln, wherein sulfur dioxide air-breather is by TFT-LCD glass tape air surface (on) metal cap (1) He Ximian (under) gold
Belong to cover (2) and one group of sulfur dioxide blows afloat pipeline composition.
A kind of method that float glass process prepares TFT-LCD glass substrate, specific implementation step are as follows:
1. selecting the glass batch of following weight fraction ratio: SiO2 60%、B2O3 9%、Al2O3 15%、CaO 5%、MgO 2%、
SnO 0.5%, ZnO 5%, put into kiln for glass batch, carry out being fused into glass metal, glass through 1500-1700 DEG C of high temperature
Liquid subsequently enters molten tin bath, and the temperature for having just enter into molten tin bath is about 1000-1200 DEG C, and glass is cooled and shaped into glass tape in molten tin bath,
Glass tape leaves about 600-800 DEG C of temperature of molten tin bath；
2. by one group of sulfur dioxide air-breather respectively with the intake of 1.5m3/h, 1.2m3/h to the tin face of glass tape and sky
Sulfur dioxide gas is blown in gas face, and subsequent glass tape enters annealing kiln annealing.
To the glass substrate for being passed through sulfur dioxide using electronics microcell probe, the tin-riched layer depth of glass sample is examined
It looks into, and glass is ground under the conditions of equal conditions, identical abrasive parameters (grinding pad granularity, mill pressure, revolving speed etc.)
Mill, milling time is longer, and amount of grinding is bigger.
The above is only present pre-ferred embodiments, is not intended to limit the present invention in any form, although
The present invention is disclosed above in the preferred embodiment, and however, it is not intended to limit the invention, any person skilled in the art,
It does not depart within the scope of technical solution of the present invention, when the technology contents using the disclosure above make a little change or are modified to equivalent
The equivalent embodiment of variation, but without departing from the technical solutions of the present invention, technology refers to according to the present invention implements to above
Any simple modification, equivalent change and modification made by example, belong in the range of technical solution of the present invention.
Claims (3)
1. a kind of float glass process prepares the device of TFT-LCD glass substrate, including kiln, molten tin bath, edge machine, annealing kiln, feature exist
In: one group of sulfur dioxide air-breather is installed between molten tin bath and annealing kiln, the sulfur dioxide air-breather is by TFT-LCD glass
Glass band air surface metal cap and tin face metal cap and one group of sulfur dioxide blow afloat pipeline composition.
2. a kind of method that float glass process prepares TFT-LCD glass substrate, including existing float glass process: frit mixing,
It is melted, molding, annealing, it is characterised in that: increase sulfur dioxide aeration step, including following step between molding and annealing room
It is rapid:
1) selects the glass batch of following weight fraction ratio: SiO2 58~63%, B2O3 8~11%, Al2O3 14~18%, CaO
3~8%, MgO 0~4%, SnO 0 ~ 1%, ZnO 0~10% carry out glass batch investment kiln to be melting into glass metal, glass
Liquid subsequently enters tin groove forming into glass tape；
2) blows sulfur dioxide gas, subsequent glass to the tin face of glass tape and air surface by one group of sulfur dioxide air-breather
Band enters annealing kiln and anneals.
3. a kind of method that float glass process prepares TFT-LCD glass substrate according to claim 2, it is characterised in that: the dioxy
The intake for changing each metal cap sulfur dioxide in sulphur air-breather is 1-1.5m3/h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910328174.3A CN109867441A (en) | 2019-04-23 | 2019-04-23 | A kind of float glass process prepares the device and method of TFT-LCD glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910328174.3A CN109867441A (en) | 2019-04-23 | 2019-04-23 | A kind of float glass process prepares the device and method of TFT-LCD glass substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109867441A true CN109867441A (en) | 2019-06-11 |
Family
ID=66922978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910328174.3A Pending CN109867441A (en) | 2019-04-23 | 2019-04-23 | A kind of float glass process prepares the device and method of TFT-LCD glass substrate |
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| CN (1) | CN109867441A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101357822A (en) * | 2008-09-03 | 2009-02-04 | 河南安飞电子玻璃有限公司 | Aluminium-boron-titan silicate glass with high straining point and high elastic modulus |
| CN103613273A (en) * | 2013-10-24 | 2014-03-05 | 芜湖东旭光电科技有限公司 | Alkali-free liquid crystal substrate glass |
| CN107543032A (en) * | 2017-10-18 | 2018-01-05 | 蚌埠中建材信息显示材料有限公司 | A kind of ultra-thin glass scratching resistant device |
| CN207596733U (en) * | 2017-11-30 | 2018-07-10 | 宜昌南玻光电玻璃有限公司 | A kind of sulfur dioxide piping installation |
| CN208378713U (en) * | 2018-06-22 | 2019-01-15 | 吴江南玻玻璃有限公司 | A kind of sulfur dioxide feeder in floatation glass production line |
| CN209797779U (en) * | 2019-04-23 | 2019-12-17 | 蚌埠中光电科技有限公司 | Device for preparing TFT-LCD glass substrate by float process |
-
2019
- 2019-04-23 CN CN201910328174.3A patent/CN109867441A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101357822A (en) * | 2008-09-03 | 2009-02-04 | 河南安飞电子玻璃有限公司 | Aluminium-boron-titan silicate glass with high straining point and high elastic modulus |
| CN103613273A (en) * | 2013-10-24 | 2014-03-05 | 芜湖东旭光电科技有限公司 | Alkali-free liquid crystal substrate glass |
| CN107543032A (en) * | 2017-10-18 | 2018-01-05 | 蚌埠中建材信息显示材料有限公司 | A kind of ultra-thin glass scratching resistant device |
| CN207596733U (en) * | 2017-11-30 | 2018-07-10 | 宜昌南玻光电玻璃有限公司 | A kind of sulfur dioxide piping installation |
| CN208378713U (en) * | 2018-06-22 | 2019-01-15 | 吴江南玻玻璃有限公司 | A kind of sulfur dioxide feeder in floatation glass production line |
| CN209797779U (en) * | 2019-04-23 | 2019-12-17 | 蚌埠中光电科技有限公司 | Device for preparing TFT-LCD glass substrate by float process |
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Application publication date: 20190611 |