CN109861381A - A kind of bypass type supplies power with double circuit switching system - Google Patents
A kind of bypass type supplies power with double circuit switching system Download PDFInfo
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- CN109861381A CN109861381A CN201910251317.5A CN201910251317A CN109861381A CN 109861381 A CN109861381 A CN 109861381A CN 201910251317 A CN201910251317 A CN 201910251317A CN 109861381 A CN109861381 A CN 109861381A
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Abstract
It supplies power with double circuit switching system the invention discloses a kind of bypass type, it is silicon-controlled including at least a pair of of exchange silicon-controlled and a pair of of DC side in side, exchange side it is silicon-controlled with exchange side it is silicon-controlled it is mutually opposing parallel connection and with AC220V, load group at ac circuit, the exchange silicon-controlled both ends silicon-controlled with side is exchanged in side are connected with the normally closed node of relay with intermediate node respectively, DC side is silicon-controlled silicon-controlled mutually opposing in parallel with DC side, wherein one end is connected by absorption inductor L with the normally opened node of relay, and the other end is connected with the normally closed node of relay；It is silicon-controlled with the silicon-controlled both ends of DC side that change of current buffer is connected in parallel on DC side；Carrier wave driving circuit controls switching and silicon-controlled on-off for relay；When silicon-controlled break down, the normally closed node of relay is served as conducting wire, at this time AC220V, relay, form bypass type circuit between load.Momentary power failure gap and physical contact phenomenon of arc discharge when switching the invention avoids physics.
Description
Technical field
It supplies power with double circuit switching system the present invention relates to power supply unit technical field more particularly to a kind of bypass type.
Background technique
As ac power supply system is universal and applies, Alternating Current Power Supply is applied in every field.Although Alternating Current Power Supply has very
High reliability, but when alternating current breaks down or AC power supply device overhauls, the feelings existing for other standby DC power supplies
Condition needs to switch to Alternating Current Power Supply into standby direct current supply.When exchange restores electricity or overhauls completion, and need to be by standby direct current
Power switching is to Alternating Current Power Supply.For core for sensitive electrical equipment, the switching between AC and DC must be nothing
Switching time, and there is very high reliability requirement.
Switching between solution AC and DC in the prior art, generally uses high-speed relay to switch as switching,
Although relay is at low cost, circuit is simply easy to accomplish, relay is to be powered by coil with powering off to controlling contact point
Actuation and disjunction, switching time is generally 10ms or so, is unable to satisfy the requirement of zero-clearance switching.
Also have using power electronic devices in the prior art as switching circuit, occurs in the long-term use such as
The problem of wafer damage or driving signal are lacked of proper care is controlled, then it cannot be guaranteed that silicon-controlled normally, at this point, even if power supply does not have
It breaks down, load end is also unable to get normal power supply, and contactor tripping, production is led to problems such as to stop.Switching device exists
In this case load reliable power supply could not be not only protected, becomes fault point instead.
Accordingly, it is badly in need of a kind of can stablize at present and realizes that the bypass type of the two-way zero-clearance switching of alternating current-direct current supplies power with double circuit switching system
System.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of can stablize to realize the two-way zero-clearance switching of alternating current-direct current
Bypass type supplies power with double circuit switching system.
The present invention solves above-mentioned technical problem using following technical scheme:
A kind of bypass type supplies power with double circuit switching system, including two-way zero-clearance switching circuit, carrier wave driving circuit, change of current buffering
Device；The two-way zero-clearance switching circuit is silicon-controlled including at least four, and it is silicon-controlled and a pair of to specifically include at least a pair of of exchange side
DC side is silicon-controlled, exchange side controllable silicon SCR 1 with exchange side controllable silicon SCR 3 it is mutually opposing in parallel and with AC220V, negative
Carry composition ac circuit, exchange side controllable silicon SCR 1 with exchange the both ends of side controllable silicon SCR 3 respectively with the normally closed node of relay
It is connected with intermediate node, the DC side controllable silicon SCR 2 is mutually opposing in parallel with DC side controllable silicon SCR 4, and wherein one end is logical
It crosses absorption inductor L to be connected with the normally opened node of relay, the other end is connected with the normally closed node of relay；The change of current buffer
It is connected in parallel on the both ends of DC side controllable silicon SCR 2 Yu DC side controllable silicon SCR 4；The carrier wave driving circuit control relay is opened
It closes and silicon-controlled on-off；When silicon-controlled break down, the normally closed node of relay is served as conducting wire, at this time AC220V, after
Bypass type circuit is formed between electric appliance, load.The double of power of alterating and direct current are realized in the conducting and cut-off silicon-controlled by control
Switch to zero-clearance.When needing AC power source to power, single-chip microcontroller gives exchange side controlled silicon conducting signal, the silicon-controlled cut-off of DC side
Signal, then by exchanging, side is silicon-controlled to be powered load to AC power source.When DC power supply need to be switched to due to certain needs
When power supply, single-chip microcontroller realizes the zero-clearance of AC to DC to the silicon-controlled pick-off signal in exchange side, DC side controlled silicon conducting signal
Switching, DC power supply is powered load by the way that DC side is silicon-controlled at this time.It is single when needing to switch back into AC power source power supply
Piece machine realizes the zero-clearance switching of direct current to exchange, at this time to the silicon-controlled pick-off signal of DC side, exchange side controlled silicon conducting signal
By exchanging, side is silicon-controlled to be powered load to exchange side power supply.
As one of preferred embodiment of the invention, the carrier wave driving circuit includes carrier circuit and driving circuit；It is described
Carrier circuit is made of battery, metal-oxide-semiconductor, high frequency transformer, PWM generator, by adjusting PWM wave duty ratio, controls metal-oxide-semiconductor
Conducting and turn-off time generate the multiple-channel output voltage with carrier wave property, realize the variation of control electrode voltage follow cathode voltage
Purpose；The main function of driving circuit is four silicon-controlled and relays for driving switching circuit.It is controllable for four
Silicon, cathode reference voltage is different, therefore silicon-controlled in order to effectively control, and needing to control pole tension can be with its cathode
Voltage change and change, keep that there is pressure difference always between SCR control pole and cathode；The driving circuit includes silicon-controlled drive
Dynamic circuit and relay drive circuit, basic structure are the bleeder circuit of optical coupled switch control；For silicon-controlled driving electricity
Road, when controlling signal is high level, optocoupler shutdown, without voltage difference, silicon-controlled cut-off between SCR control pole and cathode；When
When control signal is low level, optocoupler conducting has pressure provided by carrier circuit multiple-channel output between SCR control pole and cathode
Difference, if silicon-controlled bear forward voltage at this time and have forward conduction electric current, controlled silicon conducting.For relay driving electricity
Road, when controlling signal is high level, optocoupler shutdown, triode ends, and relay control coil does not have current loop, relay
Switch is in normally closed node.When controlling signal is low level, optocoupler conducting, triode ON, relay control coil has electricity
Potential difference, relay adhesive action, switching are normally opened node.Diode is to rapidly deplete control line when relay discharges
Residual amount of energy in enclosing accelerates relay rate of release.
As one of preferred embodiment of the invention, the change of current buffer is by being connected in parallel on DC side controllable silicon SCR 2 and straight
The resistance capacitance composition at 4 both ends of side controllable silicon SCR is flowed, specially 2 two sides of DC side controllable silicon SCR are parallel with R2, C2, DC side
4 two sides of controllable silicon SCR are parallel with R4, C4.Main function is protected to the two-way commutation course of alternating current-direct current.It is handed over directly silicon-controlled
There are a very big transient voltage surges in stream commutation course, prevents from directly resulting in device and burn.
As one of preferred embodiment of the invention, the model KR_G5LB-1-25 of the relay, the normally closed section of relay
Point CLOSE is connected with SCR1 anode, and relay normally open node OPEN is connected by absorption inductor L with SCR2, relay middle node
Point MID is connected with load；When two-way zero-clearance switching circuit works normally, relay is located at normally opened node, and switching circuit is completed
Normal alternating current-direct current switching；When two-way zero-clearance switching circuit breaks down, relay coil is not due to having control signal, relay
Device returns to normally closed node, and it is load supplying that the normally closed node circuit of relay, which will serve as conducting wire, at this time, will not cut because of two-way zero-clearance
It changes fault and introduces new fault point, it is ensured that bypass type structure truly.Relay, which realizes, does not introduce failure
Point and ensure the swiftness of circuit switching, meanwhile, relay relieves the exchange coupling that side is silicon-controlled and DC side is silicon-controlled and closes
System, avoids the case where electrifying startup voltge surge leads to DC side silicon-controlled damage.The effect of absorption inductor is that absorption is short
Road and dash current, protective device are not burned out.
As one of preferred embodiment of the invention, the output end and metal-oxide-semiconductor Q1 of the PWM generator UCC of the carrier circuit
Gate pole be connected, control terminal is connected with single-chip microcontroller；UCC is controlled by single-chip microcontroller and generates PWM wave, and then controls opening for metal-oxide-semiconductor Q1
Logical and shutdown, the direct current Vcc of the 5V of battery are chopped into square wave, the first winding of input transformer T0；First winding and two
The turn ratio of secondary winding is 1:1；By the transformation of transformer T0, the pressure difference of transformer T0 secondary winding is 5V, and has and carry
The function of wave；1 foot of transformer T1 is connected by diode with SCR_V1, and 2 feet of transformer T1 are connected with SCR_K1, are able to achieve
The voltage of SCR_V1 is 5V higher than the voltage of SCR_K1 always；Capacitor plays pressure stabilization function；Similarly, the voltage of SCR_V2 compares SCR_ always
The high 5V of the voltage of K2；The voltage of SCR_V3 is 5V higher than the voltage of AC_N always；The voltage of SCR_V4 is higher than the voltage of DC_N always
5V；The power supply driving circuit that pressure difference is 5V is generated to use, by the control signal of single-chip microcontroller, control silicon-controlled conducting or
Shutdown.
As one of preferred embodiment of the invention, the controllable silicon drive circuit specifically: Vcc by resistance R11, R21,
R31, R41 are connected with 1 foot of photoelectric isolation module U1, U2, U3, U4 respectively, 2 feet point of photoelectric isolation module U1, U2, U3, U4
It is not connected with CTRL G1, CTRL G2, CTRL G3, CTRL G4；3 feet of photoelectric isolation module U1, U2, U3, U4 respectively with SCR
V1, SCR V2, SCR V3, SCR V4 are connected；4 feet of photoelectric isolation module U1, U2, U3, U4 pass through 220 Ω, 1000 Ω resistance
It is connected respectively with SCR K1, SCR K2, AC_N, DC_N；SCR G1, SCR G2, SCR G3, SCR G4 by resistance R13, R23,
R33, R43 are connected with SCR K1, SCR K2, AC_N, DC_N respectively；SCR G1, SCR G2, SCR G3, SCR G4 pass through capacitor
C1, C2, C3, C4 are connected with SCR K1, SCR K2, AC_N, DC_N respectively；When CTRL G1 is 1, photoelectric isolation module shutdown,
Pressure difference between SCR G1 and SCR K1 is 0V；When CTRL G1 is 0, photoelectric isolation module is open-minded, according to electric resistance partial pressure original
Reason, because the pressure difference that the pressure difference between SCR V1 and SCR K1 is 5V, SCR G1 and SCR K1 is 3.5V；Similarly, SCR G2 with
The pressure difference of SCR K2 is 3.5V, and the pressure difference of SCR G3 and AC_N are 3.5V, and the pressure difference of SCR G4 and DC_N are 3.5V.
As one of preferred embodiment of the invention, in the relay drive circuit, when controlling signal is high level,
Optocoupler shutdown, triode cut-off, relay control coil do not have current loop, and relay switch is in normally closed node；Work as control
When signal is low level, optocoupler is connected, triode ON, and relay control coil has potential difference, relay adhesive action, switch
It is switched to normally opened node；Diode accelerates relay to rapidly deplete residual amount of energy in control coil when relay discharges
Rate of release.
The present invention compared with prior art the advantages of be: (1) the arrangement achieves bypass type structures truly.It should
Device, in the case where two-way zero-clearance switching circuit breaks down, the normally closed node circuit of relay is filled by introducing relay
When conducting wire be load supplying, new fault point will not be introduced because of two-way zero-clearance switching circuit failure, realize and do not introduce failure
Point and ensure the swiftness of circuit switching, meanwhile, relay relieves the exchange coupling that side is silicon-controlled and DC side is silicon-controlled and closes
System, avoids the case where electrifying startup voltge surge leads to DC side silicon-controlled damage.(2) the arrangement achieves alternating current-direct currents
Two-way zero-clearance switching, avoids momentary power failure gap when physics switching and physical contact phenomenon of arc discharge.
Detailed description of the invention
Fig. 1 is the silicon-controlled schematic diagram in embodiment；
Fig. 2 is the two-way zero-clearance switching main circuit schematic diagram of bypass type alternating current-direct current in embodiment；
Fig. 3 is bypass type electrical schematic in embodiment；
Fig. 4 is Alternating Current Power Supply current path in embodiment；
Fig. 5 is direct current supply current path in embodiment；
Fig. 6 is positive half cycle switching and switchback process equivalent circuit diagram in embodiment；
Fig. 7 is carrier circuit schematic diagram in embodiment；
Fig. 8 is controllable silicon drive circuit schematic diagram in embodiment；
Fig. 9 is relay drive circuit schematic diagram in embodiment.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention
Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation
Example.
Describe silicon-controlled working principle and characteristic in detail in conjunction with attached drawing 1 first.Silicon-controlled is that there are three PN for a kind of tool
The large power semiconductor device of the four-layer structure of knot is applied not only to rectify, can be also used for noncontacting switch with quick-make or
Cut off circuit.It is silicon-controlled that there are three electrodes, respectively cathode (K), anode (A), control electrode (G).It is silicon-controlled to have characteristics that
(1) silicon-controlled two-way as off-state when control electrode no-voltage (resistance is very big)；(2) control electrode adds positive control voltage (triggering electricity
Flow about 100mA) when, it is silicon-controlled to become on-state；(3) as long as electric current is greater than trigger current when on-state, silicon-controlled on-state can be maintained；
(4) silicon-controlled that there is diode characteristic, i.e., reversed cut-off when on-state.It is silicon-controlled that have a characteristic be exactly to have load current
In the case of, even if shutdown SCR control pole tension, can not turn off silicon-controlled.But another characteristic is silicon-controlled cathode
Voltage is higher than anode voltage, i.e. turn-off SCR.The present invention is exactly to realize that zero-clearance switches using the two silicon-controlled characteristics.
In shown in attached drawing 2, it is fully described the due feature of device substantially, is a preferred embodiment of the present invention.This
Embodiment includes two-way zero-clearance switching circuit, bypass type structure, carrier wave driving circuit, change of current buffer.Attached drawing 3 and attached drawing 4
Respectively Alternating Current Power Supply current path figure and direct current supply current path figure
The process that bypass type is powered when being switching circuit failure shown in attached drawing 5.Bypass type structure is a relay, model
For KR_G5LB-1-25.The normally closed node CLOSE of relay is connected with SCR1 anode, and relay normally open node OPEN is by absorbing electricity
Sense L is connected with SCR2, and relay intermediate node MID is connected with load.When two-way zero-clearance switching circuit works normally, relay
Positioned at normally opened node OPEN, switching circuit completes normal alternating current-direct current switching；When two-way zero-clearance switching circuit breaks down, after
For electric apparatus coil due to not having control signal, relay returns to normally closed node CLOSE, and the normally closed node circuit of relay will serve as at this time
Conducting wire is load supplying, will not introduce new fault point because of two-way zero-clearance switching circuit failure, it is ensured that truly
Bypass type structure.Relay, which realizes, not to be introduced fault point and ensures the swiftness of circuit switching, meanwhile, relay relieves friendship
It flows that side is silicon-controlled and the silicon-controlled coupled relation of DC side, avoids the damage that electrifying startup voltge surge causes DC side silicon-controlled
Bad situation.The effect of absorption inductor L is to absorb short-circuit and dash current, protective device not to be burned out.
It is Alternating Current Power Supply and the two-way handoff procedure of direct current supply shown in attached drawing 6.It breaks down or Alternating Current Power Supply in alternating current
When overhaul of the equipments, need Alternating Current Power Supply being switched to direct current supply.Device works in Alternating Current Power Supply, 1 He of controllable silicon SCR first
SCR3 is in on-state, and controllable silicon SCR 2 and SCR4 are in off-state.When device receives direct current to be switched in alternating current positive half cycle
The instruction of power supply needs to supply forward current to load to guarantee that electric current is continuous, ends first to controllable silicon SCR 1, SCR3
Signal, since current direction is forward direction at this time, SCR3 does not have forward current to flow through, can immediately enter off state, although SCR1
Pick-off signal is obtained, but due to silicon-controlled reversed external voltage turn-off characteristic, SCR1 still has forward current to flow through, Bu Huili
Turn off.Then 2 Continuity signal of controllable silicon SCR is given, when SCR2 cathode voltage (VB) is less than voltage (DC-P) of SCR2 anode,
SCR1 cut-off, SCR2 conducting, load supplying are provided by DC side power supply completely, are completed whole change of current movements, are supported on and switched
Electric current is always maintained at continuously in journey, without interrupt status, realizes zero-clearance switching.It is wanted when device is received in alternating current negative half period
The instruction of direct current supply is switched to, handoff procedure is similar with positive half cycle handoff procedure, only completes switching by SCR3 and SCR4.
When exchange restores electricity or overhaul completion, need direct current supply switching back into Alternating Current Power Supply.Device work first
Make in direct current supply, controllable silicon SCR 2 or SCR4 are in on-state, and controllable silicon SCR 1 and SCR3 are in off-state.It is wanted when device receives
The instruction (if being powered at this time by SCR2) for switching to Alternating Current Power Supply, gives 2 pick-off signal of controllable silicon SCR, then giving can first
Silicon SCR1 Continuity signal is controlled, although controllable silicon SCR 2 has obtained pick-off signal, since silicon-controlled reversed external voltage turns off spy
Property, SCR2 still has forward current to flow through, will not immediately turn off.When 2 cathode voltage of controllable silicon SCR is greater than 2 anode of controllable silicon SCR
Voltage, controllable silicon SCR 2 are ended, and controllable silicon SCR 1 is connected, and load supplying is provided by exchange side power supply completely, complete whole changes of current
Movement is supported on electric current in handoff procedure and is always maintained at continuously, without interrupt status, realizes zero-clearance switching.When device passes through
When SCR4 powers, handoff procedure is similar therewith, only completes switching by SCR3 and SCR4.
Change of current buffer is by being connected in parallel on the resistance R4 and capacitor C4 group at the both ends resistance R2 and capacitor C2, SCR4 at the both ends SCR2
At main function is protected to the two-way commutation course of alternating current-direct current.Occurs one in silicon-controlled alternating current-direct current commutation course
Very big transient voltage surges directly result in device and burn.
Carrier wave driving circuit is mainly made of carrier circuit and driving circuit.The main function of carrier wave driving circuit is driving
Four of switching circuit are silicon-controlled and a relay.Silicon-controlled for four, cathode reference voltage is different, therefore is
Effective control is silicon-controlled, and needing to control pole tension can change as its cathode voltage changes, holding SCR control pole
There is pressure difference always between cathode.
It is carrier circuit schematic diagram shown in attached drawing 7.Carrier circuit is by battery, metal-oxide-semiconductor, high frequency transformer, PWM generator group
At controlling conducting and the turn-off time of metal-oxide-semiconductor, generate the multiple-channel output with carrier wave property by adjusting the duty ratio of PWM wave
Voltage realizes the purpose of control electrode voltage follow cathode voltage variation.The output end of PWM generator UCC and the gate pole of metal-oxide-semiconductor Q1
It is connected, control terminal is connected with single-chip microcontroller.UCC is controlled by single-chip microcontroller and generates PWM wave, and then controls opening and closing for metal-oxide-semiconductor Q1
Disconnected, the direct current Vcc of the 5V of battery is chopped into square wave, the first winding of input transformer T0.First winding and secondary winding
Turn ratio be 1:1.By the transformation of transformer T0, the pressure difference of transformer T0 secondary winding is 5V, and has the function of carrier wave
Energy.1 foot of transformer T1 is connected by diode with SCR_V1, and 2 feet of transformer T1 are connected with SCR_K1, are able to achieve SCR_V1
Voltage it is 5V higher than the voltage of SCR_K1 always.Capacitor plays pressure stabilization function.Similarly, the voltage of the SCR_V2 electricity than SCR_K2 always
Press high 5V；The voltage of SCR_V3 is 5V higher than the voltage of AC_N always；The voltage of SCR_V4 is 5V higher than the voltage of DC_N always.It generates
The power supply driving circuit that pressure difference is 5V uses, and by the control signal of single-chip microcontroller, controls silicon-controlled on or off.
Driving circuit includes controllable silicon drive circuit and relay drive circuit, and the two basic structure is optical coupled switch control
The bleeder circuit of system.For controllable silicon drive circuit, when controlling signal is high level, optocoupler shutdown, SCR control pole with
Without voltage difference, silicon-controlled cut-off between cathode；When controlling signal is low level, optocoupler is connected, SCR control pole and cathode
Between have pressure difference provided by carrier circuit multiple-channel output, if it is silicon-controlled at this time bear forward voltage and have forward conduction electricity
It flows, then controlled silicon conducting.
Attached drawing 8 show the circuit diagram of controllable silicon drive circuit.Vcc is distinguished by resistance R11, R21, R31, R41
Be connected with 1 foot of photoelectric isolation module U1, U2, U3, U4,2 feet of photoelectric isolation module U1, U2, U3, U4 respectively with CTRL G1,
CTRL G2, CTRL G3, CTRL G4 are connected.3 feet of photoelectric isolation module U1, U2, U3, U4 respectively with SCR V1, SCR V2,
SCR V3, SCR V4 are connected.4 feet of photoelectric isolation module U1, U2, U3, U4 by 220 Ω, 1000 Ω resistance respectively with SCR
K1, SCR K2, AC_N, DC_N are connected.SCR G1, SCR G2, SCR G3, SCR G4 pass through resistance R13, R23, R33, R43 points
It is not connected with SCR K1, SCR K2, AC_N, DC_N.SCR G1, SCR G2, SCR G3, SCR G4 by capacitor C1, C2, C3,
C4 is connected with SCR K1, SCR K2, AC_N, DC_N respectively.When CTRL G1 be 1 when, photoelectric isolation module shutdown, SCR G1 with
Pressure difference between SCR K1 is 0V.When CTRL G1 is 0, photoelectric isolation module is open-minded, according to electric resistance partial pressure principle, because of SCR
Pressure difference between V1 and SCR K1 is that the pressure difference of 5V, SCR G1 and SCR K1 are 3.5V.Similarly, the pressure difference of SCR G2 and SCR K2
For 3.5V, the pressure difference of SCR G3 and AC_N are 3.5V, and the pressure difference of SCR G4 and DC_N are 3.5V.
Attached drawing 9 show the circuit diagram of relay drive circuit.For relay drive circuit, when control signal is
When high level, optocoupler shutdown, triode ends, and relay control coil does not have current loop, and relay switch is in normally closed section
Point.When controlling signal is low level, optocoupler is connected, triode ON, and relay control coil has potential difference, and relay is attracted
Movement, switching are normally opened node.Diode adds to rapidly deplete residual amount of energy in control coil when relay discharges
Fast relay rate of release.
Embodiment 1
Based on the above working principle and mentality of designing: the switching as shown in Fig. 2, a kind of bypass type of the present embodiment supplies power with double circuit
System, including two-way zero-clearance switching circuit, carrier wave driving circuit, change of current buffer；The two-way zero-clearance switching circuit is at least wrapped
Include four it is silicon-controlled, specifically include that at least a pair of of exchange silicon-controlled and a pair of of DC side in side is silicon-controlled, and the exchange side is silicon-controlled
SCR1 with exchange side controllable silicon SCR 3 it is mutually opposing in parallel and with AC220V, load group at ac circuit, it is silicon-controlled to exchange side
SCR1 is connected with the normally closed node of relay with intermediate node respectively with the both ends for exchanging side controllable silicon SCR 3, and the DC side can
Control the normally opened section that silicon SCR2 is mutually opposing in parallel with DC side controllable silicon SCR 4, and wherein one end passes through absorption inductor L and relay
Point is connected, and the other end is connected with the normally closed node of relay；The change of current buffer is connected in parallel on DC side controllable silicon SCR 2 and straight
Flow the both ends of side controllable silicon SCR 4；The switch of the carrier wave driving circuit control relay and silicon-controlled on-off；When silicon-controlled
When breaking down, the normally closed node of relay is served as conducting wire, at this time AC220V, relay, form bypass type electricity between load
Road.The present embodiment realizes the two-way zero-clearance switching of power of alterating and direct current by controlling silicon-controlled conducting and cut-off.When needing to exchange
When power supply power supply, single-chip microcontroller gives exchange side controlled silicon conducting signal, the silicon-controlled pick-off signal of DC side, then AC power source passes through friendship
Side is silicon-controlled is powered to load for stream.When that need to be switched to DC power supply power supply due to certain needs, single-chip microcontroller gives exchange side
Silicon-controlled pick-off signal, DC side controlled silicon conducting signal realize the zero-clearance switching of AC to DC, and DC power supply passes through at this time
DC side is silicon-controlled to be powered load.When needing to switch back into AC power source power supply, single-chip microcontroller is to silicon-controlled section of DC side
Stop signal, exchange side controlled silicon conducting signal realize the zero-clearance switching of direct current to exchange, exchange side power supply at this time and pass through exchange side
It is silicon-controlled that load is powered.
Embodiment 2
The present embodiment is substantially the same manner as Example 1, and difference essentially consists in, and the carrier wave driving circuit includes carrier wave
Circuit and driving circuit；The carrier circuit is made of battery, metal-oxide-semiconductor, high frequency transformer, PWM generator, by adjusting PWM
Wave duty ratio controls conducting and the turn-off time of metal-oxide-semiconductor, generates the multiple-channel output voltage with carrier wave property, realizes control electrode
The purpose of voltage follow cathode voltage variation；The main function of driving circuit be drive four of switching circuit it is silicon-controlled and one
Relay.Silicon-controlled for four, cathode reference voltage is different, therefore silicon-controlled in order to effectively control, and needs to control
Pole tension can change as its cathode voltage changes, and keep having pressure difference between SCR control pole and cathode always；It is described
Driving circuit includes controllable silicon drive circuit and relay drive circuit, and basic structure is the partial pressure electricity of optical coupled switch control
Road；For controllable silicon drive circuit, when controlling signal is high level, optocoupler shutdown does not have between SCR control pole and cathode
Voltage difference, silicon-controlled cut-off；When controlling signal is low level, optocoupler conducting has carrier wave electric between SCR control pole and cathode
Pressure difference provided by the multiple-channel output of road, it is silicon-controlled if silicon-controlled bear forward voltage at this time and have forward conduction electric current
Conducting.For relay drive circuit, when controlling signal is high level, optocoupler shutdown, triode cut-off, relay control line
No current loop is enclosed, relay switch is in normally closed node.When controlling signal is low level, optocoupler conducting, triode is led
Logical, relay control coil has potential difference, relay adhesive action, and switching is normally opened node.Diode is in relay
Device rapidly depletes residual amount of energy in control coil when discharging, accelerate relay rate of release.Referring to Fig. 8: the silicon-controlled driving
Circuit specifically: Vcc is connected with 1 foot of photoelectric isolation module U1, U2, U3, U4 respectively by resistance R11, R21, R31, R41,
2 feet of photoelectric isolation module U1, U2, U3, U4 are connected with CTRL G1, CTRL G2, CTRL G3, CTRL G4 respectively；Photoelectricity every
3 feet from module U1, U2, U3, U4 are connected with SCR V1, SCR V2, SCR V3, SCR V4 respectively；Photoelectric isolation module U1,
4 feet of U2, U3, U4 are connected with SCR K1, SCR K2, AC_N, DC_N respectively by 220 Ω, 1000 Ω resistance；SCR G1,SCR
G2, SCR G3, SCR G4 are connected with SCR K1, SCR K2, AC_N, DC_N respectively by resistance R13, R23, R33, R43；SCR
G1, SCR G2, SCR G3, SCR G4 are connected with SCR K1, SCR K2, AC_N, DC_N respectively by capacitor C1, C2, C3, C4；
When CTRL G1 is 1, photoelectric isolation module is turned off, and the pressure difference between SCR G1 and SCR K1 is 0V；When CTRL G1 is 0,
Photoelectric isolation module is open-minded, according to electric resistance partial pressure principle because pressure difference between SCR V1 and SCR K1 is 5V, SCR G1 with
The pressure difference of SCR K1 is 3.5V；Similarly, the pressure difference of SCR G2 and SCR K2 is 3.5V, and the pressure difference of SCR G3 and AC_N are 3.5V,
The pressure difference of SCR G4 and DC_N are 3.5V, referring to Fig. 9: in the relay drive circuit, when controlling signal is high level,
Optocoupler shutdown, triode cut-off, relay control coil do not have current loop, and relay switch is in normally closed node；Work as control
When signal is low level, optocoupler is connected, triode ON, and relay control coil has potential difference, relay adhesive action, switch
It is switched to normally opened node；Diode accelerates relay to rapidly deplete residual amount of energy in control coil when relay discharges
Rate of release.
Embodiment 3
The present embodiment is substantially the same manner as Example 1, and difference essentially consists in, and the change of current buffer is by being connected in parallel on
The resistance capacitance at DC side controllable silicon SCR 2 and 4 both ends of DC side controllable silicon SCR forms, specially 2 liang of DC side controllable silicon SCR
Side is parallel with R2, C2, and 4 two sides of DC side controllable silicon SCR are parallel with R4, C4.The present embodiment main function is two-way to alternating current-direct current
Commutation course is protected.Occur a very big transient voltage surges in silicon-controlled alternating current-direct current commutation course, prevents
Device is directly resulted in burn.
Embodiment 4
The present embodiment is substantially the same manner as Example 1, and difference essentially consists in, the model KR_ of the relay
G5LB-1-25, the normally closed node CLOSE of relay are connected with SCR1 anode, relay normally open node OPEN by absorption inductor L with
SCR2 is connected, and relay intermediate node MID is connected with load；When two-way zero-clearance switching circuit works normally, relay is located at
Normally opened node, switching circuit complete normal alternating current-direct current switching；When two-way zero-clearance switching circuit breaks down, relay coil
Due to not having control signal, relay returns to normally closed node, and the normally closed node circuit of relay will serve as conducting wire and supply for load at this time
Electricity will not introduce new fault point because of two-way zero-clearance switching circuit failure, it is ensured that bypass type structure truly.After
Electric appliance realize does not introduce fault point and ensure circuit switching it is swiftness, meanwhile, relay relieve exchange side it is silicon-controlled and
The silicon-controlled coupled relation of DC side avoids the case where electrifying startup voltge surge leads to DC side silicon-controlled damage.It inhales
The effect for receiving inductance is to absorb short-circuit and dash current, protective device not to be burned out, the PWM generator UCC of the carrier circuit
Output end be connected with the gate pole of metal-oxide-semiconductor Q1, control terminal is connected with single-chip microcontroller；UCC, which is controlled, by single-chip microcontroller generates PWM wave, into
And opening and turning off for metal-oxide-semiconductor Q1 is controlled, the direct current Vcc of the 5V of battery is chopped into square wave, and input transformer T0's is primary
Winding；The turn ratio of first winding and secondary winding is 1:1；Pass through the transformation of transformer T0, the pressure of transformer T0 secondary winding
Difference is 5V, and has the function of carrier wave；1 foot of transformer T1 is connected by diode with SCR_V1,2 feet of transformer T1 and
SCR_K1 is connected, and the voltage for being able to achieve SCR_V1 is 5V higher than the voltage of SCR_K1 always；Capacitor plays pressure stabilization function；Similarly, SCR_
The voltage of V2 is 5V higher than the voltage of SCR_K2 always；The voltage of SCR_V3 is 5V higher than the voltage of AC_N always；The voltage of SCR_V4
Always 5V higher than the voltage of DC_N；The power supply driving circuit that pressure difference is 5V is generated to use, by the control signal of single-chip microcontroller,
Control silicon-controlled on or off.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (7)
- The switching system 1. a kind of bypass type supplies power with double circuit, which is characterized in that including two-way zero-clearance switching circuit, carrier wave driving electricity Road, change of current buffer；The two-way zero-clearance switching circuit is silicon-controlled including at least four, and specifically including at least a pair of of exchange side can Control silicon and a pair of of DC side be silicon-controlled, exchange side controllable silicon SCR 1 with exchange the mutually opposing parallel connection of side controllable silicon SCR 3 and with AC220V, load group at ac circuit, exchange side controllable silicon SCR 1 with exchange the both ends of side controllable silicon SCR 3 respectively with relay Normally closed node be connected with intermediate node, the DC side controllable silicon SCR 2 is mutually opposing in parallel with DC side controllable silicon SCR 4, Wherein one end is connected by absorption inductor L with the normally opened node of relay, and the other end is connected with the normally closed node of relay；It is described Change of current buffer is connected in parallel on the both ends of DC side controllable silicon SCR 2 Yu DC side controllable silicon SCR 4；The carrier wave driving circuit control The switch of relay and silicon-controlled on-off；When silicon-controlled break down, the normally closed node of relay is served as conducting wire, at this time AC220V, relay form bypass type circuit between load.
- The switching system 2. bypass type according to claim 1 supplies power with double circuit, which is characterized in that the carrier wave driving circuit packet Include carrier circuit and driving circuit；The carrier circuit is made of battery, metal-oxide-semiconductor, high frequency transformer, PWM generator, passes through tune PWM wave duty ratio is saved, conducting and the turn-off time of metal-oxide-semiconductor are controlled, generates the multiple-channel output voltage with carrier wave property；The drive Dynamic circuit includes controllable silicon drive circuit and relay drive circuit, and basic structure is the partial pressure electricity of optical coupled switch control Road.
- The switching system 3. bypass type according to claim 1 supplies power with double circuit, which is characterized in that the change of current buffer by The resistance capacitance for being connected in parallel on DC side controllable silicon SCR 2 and 4 both ends of DC side controllable silicon SCR forms, and specially DC side is silicon-controlled The two sides SCR2 are parallel with R2, C2, and 4 two sides of DC side controllable silicon SCR are parallel with R4, C4.
- The switching system 4. bypass type according to claim 1 supplies power with double circuit, which is characterized in that the model of the relay KR_G5LB-1-25, the normally closed node CLOSE of relay are connected with SCR1 anode, and relay normally open node OPEN passes through absorption inductor L is connected with SCR2, and relay intermediate node MID is connected with load.
- The switching system 5. bypass type according to claim 2 supplies power with double circuit, which is characterized in that the PWM of the carrier circuit The output end of generator UCC is connected with the gate pole of metal-oxide-semiconductor Q1, and control terminal is connected with single-chip microcontroller；UCC is controlled by single-chip microcontroller to generate PWM wave, and then opening and turning off for metal-oxide-semiconductor Q1 is controlled, the direct current Vcc of the 5V of battery is chopped into square wave, input transformer The first winding of T0；The turn ratio of first winding and secondary winding is 1:1；By the transformation of transformer T0, transformer T0 bis- times The pressure difference of winding is 5V, and has the function of carrier wave；1 foot of transformer T1 is connected by diode with SCR_V1, transformer 2 feet of T1 are connected with SCR_K1, and the voltage for being able to achieve SCR_V1 is 5V higher than the voltage of SCR_K1 always；Capacitor plays pressure stabilization function； Similarly, the voltage of SCR_V2 is 5V higher than the voltage of SCR_K2 always；The voltage of SCR_V3 is 5V higher than the voltage of AC_N always；SCR_ The voltage of V4 is 5V higher than the voltage of DC_N always；It generates the power supply driving circuit that pressure difference is 5V to use, passes through single-chip microcontroller Signal is controlled, silicon-controlled on or off is controlled.
- The switching system 6. bypass type according to claim 2 supplies power with double circuit, which is characterized in that the controllable silicon drive circuit Specifically: Vcc is connected with 1 foot of photoelectric isolation module U1, U2, U3, U4 respectively by resistance R11, R21, R31, R41, photoelectricity 2 feet of isolation module U1, U2, U3, U4 are connected with CTRL G1, CTRL G2, CTRL G3, CTRL G4 respectively；Phototube Coupling mould 3 feet of block U1, U2, U3, U4 are connected with SCR V1, SCR V2, SCR V3, SCR V4 respectively；Photoelectric isolation module U1, U2, U3, 4 feet of U4 are connected with SCR K1, SCR K2, AC_N, DC_N respectively by 220 Ω, 1000 Ω resistance；SCR G1,SCR G2, SCR G3, SCR G4 are connected with SCR K1, SCR K2, AC_N, DC_N respectively by resistance R13, R23, R33, R43；SCR G1, SCR G2, SCR G3, SCR G4 are connected with SCR K1, SCR K2, AC_N, DC_N respectively by capacitor C1, C2, C3, C4；When When CTRL G1 is 1, photoelectric isolation module is turned off, and the pressure difference between SCR G1 and SCR K1 is 0V；When CTRL G1 is 0, light It is open-minded to be electrically isolated module, according to electric resistance partial pressure principle, because the pressure difference between SCR V1 and SCR K1 is 5V, SCR G1 and SCR The pressure difference of K1 is 3.5V；Similarly, the pressure difference of SCR G2 and SCR K2 is 3.5V, and the pressure difference of SCR G3 and AC_N are 3.5V, SCR The pressure difference of G4 and DC_N is 3.5V.
- The switching system 7. bypass type according to claim 4 supplies power with double circuit, which is characterized in that in the relay driving electricity Lu Zhong, when controlling signal is high level, optocoupler shutdown, triode ends, and relay control coil does not have current loop, relay Device switch is in normally closed node；When controlling signal is low level, optocoupler conducting, triode ON, relay control coil has Potential difference, relay adhesive action, switching are normally opened node；Diode is to rapidly deplete control when relay discharges Residual amount of energy in coil accelerates relay rate of release.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910251317.5A CN109861381A (en) | 2019-03-29 | 2019-03-29 | A kind of bypass type supplies power with double circuit switching system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910251317.5A CN109861381A (en) | 2019-03-29 | 2019-03-29 | A kind of bypass type supplies power with double circuit switching system |
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| CN209389778U (en) * | 2019-03-29 | 2019-09-13 | 国网安徽省电力有限公司阜阳供电公司 | A kind of bypass type supplies power with double circuit switching system |
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| CN104682744A (en) * | 2015-03-03 | 2015-06-03 | 东北大学 | Push-pull type switching power supply device based on self-adaptive closed-loop control and control method thereof |
| CN104682394A (en) * | 2015-03-03 | 2015-06-03 | 东北大学 | Electric-dazzling prevention device and method of bidirectional zero-clearance conversion current based on self-adaption |
| CN209389778U (en) * | 2019-03-29 | 2019-09-13 | 国网安徽省电力有限公司阜阳供电公司 | A kind of bypass type supplies power with double circuit switching system |
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