CN109860440A - A kind of preparation method of the perovskite polarized luminescence diode based on friction process - Google Patents
A kind of preparation method of the perovskite polarized luminescence diode based on friction process Download PDFInfo
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Abstract
The preparation method of the invention discloses a kind of perovskite polarized luminescence diode based on friction process, by preparing substrate, it is sequentially prepared anode layer on substrate, hole transmission layer, perovskite active light-emitting layer, electron transfer layer, cathodic modification layer and cathode layer, finally obtained substrate is packaged, complete device preparation, wherein preparing perovskite active light-emitting layer is first to synthesize perovskite nano wire and disperse in a solvent, with drop-coating drop coating perovskite nanowire solution and friction orientation is carried out with hairbrush on the hole transport layer, led to nano wire along the deflection of frictional direction by the drag that friction fiber applies and is redirected；Preparation method of the present invention is simple, low in cost, and perovskite polarized luminescence diode component obtained can generate polarised light from source, can reduce energy loss.
Description
Technical field
The invention belongs to photoelectric device technical field more particularly to a kind of perovskite polarized luminescences two based on friction process
The preparation method of pole pipe.
Background technique
In various semiconductor materials, perovskite since it is with excellent luminescent properties, such as high-luminous-efficiency,
Tunable optical narrow-band gap and superior charge transport ability and other structures advantage, such as geometry diversity and simply
Low temperature preparation and attract wide public concern, in light emitting diode, solar battery, the performance of the fields such as laser and photodetector
Great potential is gone out.
In tradition, polarised light is obtained by adding polarizing film before unpolarized light source, this behave will lose unpolarized
The incident light of light source about 50%.This is to being applied to display or illumination and for energy conservation and environmental protection angle be unfavorable.If line is inclined
The electroluminescent device that shakes actively shines, then can replace the polarizing film of conventional liquid crystal, liquid crystal cell even background
Light source, so as to simplifying device architecture, substantially reducing luminous energy loss and improving brightness and the visual angle of display.
Zhang D, Yang Y, Bekenstein Y et al., in " Synthesis of Composition Tunable
and Highly Luminescent Cesium Lead Halide Nanowires through Anion-Exchange
Reactions " J. Am. Chem. Soc. 2016,138,7236 7239 describes perovskite CsPbX3The conjunction of nano wire
At perovskite nano wire not only has excellent optical property, as luminous quantum efficiency is high, luminescent color is adjustable, photochromic purity
The advantages that high, it is lower that there are also preparation costs, is easy to solution processability.Nano wire has high aspect ratio, is considered a type of powerful
Nano material, for manufacture novel electron, photoelectricity and senser element provide a large amount of chances.
Summary of the invention
The preparation method of the object of the present invention is to provide a kind of perovskite polarized luminescence diode based on friction process, with
Substitution tradition is applied to background light source using polarizing film.
In order to achieve the above purpose, the present invention the following technical schemes are provided:
A kind of preparation method of the perovskite polarized luminescence diode based on friction process, the specific steps are as follows: prepare substrate simultaneously
It is sequentially prepared anode layer, hole transmission layer, perovskite active light-emitting layer, electron transfer layer, cathodic modification layer and yin on it
Obtained substrate, is finally packaged by pole layer, completes device preparation.
Specific preparation process is as follows for the substrate:
(1) using ito glass as the substrate of substrate, washing and drying treatment is carried out to it；
(2) ozone treatment is carried out to the substrate that step 1 makes.
The specific preparation step of the hole transmission layer are as follows: spin coating has hole transport special on the anode layer using spin-coating method
The solution of property material, prepares hole transmission layer.
Spin-coating time is 40-90s in hole transmission layer preparation, and the revolving speed of spin coating is 1000-4000rpm, after substrate is existed
10-15min is heated at a temperature of 120-150 DEG C.
The specific preparation step of the perovskite active light-emitting layer are as follows: first synthesize perovskite nano wire and be dispersed in solvent
In, drop coating perovskite nanowire solution and friction orientation is carried out with hairbrush on the hole transport layer with drop-coating, by friction fiber
The drag of application leads to nano wire along the deflection of frictional direction and redirects；
Wherein perovskite nano wire is selected from CsPbClxBr3-xAnd CsPbBrxI3-xOne or more of, x 0-3.
The perovskite nanowire width is having a size of 5-50nm, and length dimension is 200nm-100 μm, with ammonium thiocyanate or four
After ammonium fluoroborate surface treatment, it is dispersed in dry toluene or anhydrous n-hexane.
The specific preparation step of the electron transfer layer are as follows: there is electron transport property material by vacuum thermal evaporation or spin coating
Material, prepares electron transfer layer.
The specific preparation step of the cathodic modification layer and cathode layer are as follows: pass through vacuum thermal evaporation on the electron transport layer
LiF, Al material prepare cathodic modification layer and cathode layer.
The hole transmission layer spin coating is with a thickness of 30-60nm；The deposition thickness of perovskite active light-emitting layer is 30-80nm；
The deposition thickness of electron transfer layer is 30-40nm；The deposition thickness of cathodic modification layer LiF and cathode layer Al be respectively 1nm and
100nm。
The preparation method of the perovskite polarized luminescence diode based on friction process can be applied to preparation polarization hair
Optical diode.
The invention has the advantages that
Perovskite polarized luminescence diode based on friction process of the invention, preparation method is simple, low in cost, obtained
Perovskite polarized luminescence diode component can generate polarised light from source, can reduce energy loss.
Detailed description of the invention
Fig. 1 show the step schematic diagram of the perovskite nano wire luminescent layer preparation method based on friction process.
Fig. 2 show the CsPbBr of embodiment3The transmission electron microscope picture (TEM) of nano wire.
Fig. 3 show the electroluminescent curve (brightness and apply alive functional relation) of device prepared by embodiment.
Fig. 4 show the normalization electroluminescent graph (under 12V voltage vertically and parallel direction) of device prepared by embodiment.
Fig. 5 show after the friction of embodiment under metallographic microscope polarizing film in parallel with vertical comparison diagram.
Specific embodiment
Below in conjunction with specific example, technical scheme is described further:
A kind of perovskite (CsPbBr based on friction process3) polarized luminescence diode preparation method, comprising the following steps:
(1) using ito glass as the substrate of substrate, substrate is cleaned by ultrasonic using ITO cleaning solution, is blown after cleaning with nitrogen
Dry doubling dries 10min in 100 DEG C of thermal station；
(2) substrate of the substrate made to step 1 carries out ozone treatment；
(3) in an atmosphere, using spin-coating method on step 2 treated anode layer with the revolving speed spin coating 20mg/ml's of 2000rpm
Then substrate is heated 15min at a temperature of 120 DEG C by poly-TPD；
(4) in an atmosphere, the CsPbBr of 0.3ml is added dropwise on step 3 treated substrate using drop-coating3Nanowire solution,
Then equidirectional friction is carried out with hairbrush, solvent has prepared perovskite active light-emitting layer after being evaporated completely；
(5) in glove box, the vacuum evaporation electron transfer layer TPBi on perovskite luminescent layer prepared by step 4 makes its attachment
In the top of perovskite nano wire；
(6) preparation of cathode: keep step 5 vacuum chamber pressure it is constant, on the electron transport layer evaporation cathode decorative layer LiF with
Cathode layer Al；The above-mentioned perovskite polarized luminescence diode based on friction process is obtained after the completion.
Claims (10)
1. a kind of preparation method of the perovskite polarized luminescence diode based on friction process, which is characterized in that specific steps are such as
Under: it prepares substrate and is sequentially prepared anode layer, hole transmission layer, perovskite active light-emitting layer, electron transfer layer, cathode on it
Obtained substrate is finally packaged by decorative layer and cathode layer, completes device preparation.
2. preparation method according to claim 1, which is characterized in that specific preparation process is as follows for the substrate:
(1) using ito glass as the substrate of substrate, washing and drying treatment is carried out to it；
(2) ozone treatment is carried out to the substrate that step 1 makes.
3. preparation method according to claim 1, which is characterized in that the specific preparation step of the hole transmission layer are as follows:
Using spin-coating method on the anode layer spin coating have hole transporting properties material solution, prepare hole transmission layer.
4. preparation method according to claim 3, which is characterized in that the spin-coating time is 40-90s, the revolving speed of spin coating
For 1000-4000rpm, after substrate heated into 10-15min at a temperature of 120-150 DEG C.
5. preparation method according to claim 1, which is characterized in that the specific preparation of the perovskite active light-emitting layer walks
Suddenly are as follows: first synthesize perovskite nano wire and disperse in a solvent, with drop-coating drop coating perovskite nanometer on the hole transport layer
Line solution simultaneously carries out friction orientation with hairbrush；
The perovskite nano wire is selected from CsPbClxBr3-xAnd CsPbBrxI3-xOne or more of, wherein x is 0-3.
6. preparation method according to claim 5, which is characterized in that the perovskite nanowire width is having a size of 5-
50nm, length dimension be 200nm-100 μm, with ammonium thiocyanate or ammonium tetrafluoroborate surface treatment after, be dispersed in dry toluene or
In anhydrous n-hexane.
7. preparation method according to claim 1, which is characterized in that the specific preparation step of the electron transfer layer are as follows:
There is electron transport property material by vacuum thermal evaporation or spin coating, prepare electron transfer layer.
8. preparation method according to claim 1, which is characterized in that the specific system of the cathodic modification layer and cathode layer
Standby step are as follows: cathodic modification layer and cathode layer are prepared by vacuum thermal evaporation LiF, Al material on the electron transport layer.
9. preparation method according to claim 1, which is characterized in that the hole transmission layer spin coating is with a thickness of 30-60nm；
The deposition thickness of perovskite active light-emitting layer is 30-80nm；The deposition thickness of electron transfer layer is 30-40nm；Cathodic modification layer
The deposition thickness of LiF and cathode layer Al are respectively 1nm and 100nm.
10. the preparation side of the perovskite polarized luminescence diode according to any one of claims 1 to 9 based on friction process
Method can be applied to prepare polarized luminescence diode.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113087010A (en) * | 2021-03-12 | 2021-07-09 | 北京交通大学 | Method for preparing cesium-lead halogen perovskite nanowire heterojunction by using hydrogen halide |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957973A (en) * | 2016-06-16 | 2016-09-21 | 中国华能集团公司 | Flexible luminescent device structure and preparation method thereof |
| CN106463639A (en) * | 2014-04-30 | 2017-02-22 | 剑桥企业有限公司 | Electroluminescent device |
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2019
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106463639A (en) * | 2014-04-30 | 2017-02-22 | 剑桥企业有限公司 | Electroluminescent device |
| CN105957973A (en) * | 2016-06-16 | 2016-09-21 | 中国华能集团公司 | Flexible luminescent device structure and preparation method thereof |
Non-Patent Citations (9)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113087010A (en) * | 2021-03-12 | 2021-07-09 | 北京交通大学 | Method for preparing cesium-lead halogen perovskite nanowire heterojunction by using hydrogen halide |
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