CN109842017A - A kind of tunable laser and preparation method thereof - Google Patents
A kind of tunable laser and preparation method thereof Download PDFInfo
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- CN109842017A CN109842017A CN201910285586.3A CN201910285586A CN109842017A CN 109842017 A CN109842017 A CN 109842017A CN 201910285586 A CN201910285586 A CN 201910285586A CN 109842017 A CN109842017 A CN 109842017A
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Abstract
The invention discloses a kind of tunable laser and preparation method thereof, which includes: the first substrate and the first electrode for being set to the first one side of substrate；It is set in turn in first distributed bragg reflector mirror, active layer, oxide layer, contact layer and second electrode of first substrate far from first electrode side；Second electrode is provided with overarm arm far from the side of the first substrate, attaches the permanent magnetic thin film of overarm arm setting, and attach the second distributed bragg reflector mirror of overarm arm setting；Permanent magnetic thin film is provided with planar spiral winding far from the side of the first substrate, so that the electromagnetic force between permanent magnetic thin film and the planar spiral winding for being connected with alternating current controls the deformation quantity of overarm arm.The present invention provides a kind of tunable laser and preparation method thereof, to realize a kind of response speed block, adjust the high tunable laser of frequency.
Description
Technical field
The present invention relates to semiconductor optoelectronic subdomains more particularly to a kind of tunable laser and preparation method thereof.
Background technique
Vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL) is one
Kind semiconductor devices, can go out light perpendicular to chip surface.Photoreduction process should be gone out and need to complete energy excitation and resonance amplification two
Step: first, excite the Quantum Well of active layer to generate electrons and holes, electrons and holes by external energy (for example, electric energy)
In conjunction with luminous；Second, it is respectively arranged with distributed bragg reflector mirror in active area two sides, so that light is in two panels distribution Bradley
It is reflected repeatedly between lattice reflecting mirror, generates resonance effect, so that the energy amplification of light is final to generate laser.
Compared to conventional laser, VCSEL has many advantages, for example, the outgoing wavelength of VCSEL depends on the outer of material
Prolong growth, the regulation of wavelength easy to accomplish.It can be by controlling the cavity length between distributed bragg reflector mirror up and down, control
The wavelength of VCSEL shoot laser.VCSEL realizes that wavelength adjusts by way of electrostatic drive in the prior art, and electrostatic drive is
For the technology driven using the Coulomb force between charge as driving force, for example, a distributed bragg reflector mirror can be set
Electric field can be formed in the diaphragm two sides by voltage, the electrostatic force which generates can draw on the diaphragm that deformation occurs by being placed in
Rise diaphragm deformation occurs bending, then the distance between the distributed bragg reflector mirror and another distributed bragg reflector mirror hair
Changing, optical maser wavelength change, and after removing voltage, electric field force disappears, and diaphragm restores under the action of elastic restoring force
To original state.
Summary of the invention
The embodiment of the invention provides a kind of tunable laser and preparation method thereof, to realize a kind of electromagnetic drive mode
Tunable laser, with improve tunable laser response speed and adjust frequency.
In a first aspect, the embodiment of the invention provides a kind of tunable laser, comprising:
First substrate and the first electrode for being set to first one side of substrate；It is remote to be set in turn in first substrate
The first distributed bragg reflector mirror, active layer, oxide layer, contact layer and second electrode from the first electrode side；
The second electrode is provided with overarm arm far from the side of first substrate, attaches the overarm arm setting forever
Magnetic thin film, and attach the second distributed bragg reflector mirror of the overarm arm setting；The permanent magnetic thin film is far from described
The side of one substrate is provided with planar spiral winding, so that the permanent magnetic thin film and the planar spiral winding for being connected with alternating current
Between electromagnetic force the deformation quantity of the overarm arm is controlled.
Optionally, matcoveredn is arranged far from the side of first substrate in the planar spiral winding, for covering
State planar spiral winding；The protective layer is provided with light hole, is used for outgoing laser beams.
Optionally, the oxide layer is provided with first through hole；Where being parallel to first substrate on the direction of plane,
The first through hole is at least partly overlapped with the light hole.
Optionally, the second electrode is provided with the second through-hole；The contact layer is set far from the side of first substrate
It is equipped with high transmittance film, the high transmittance film is located in second through-hole；Where being parallel to first substrate on the direction of plane,
The high transmittance film covers the first through hole.
Optionally, the permanent magnetic thin film is set to side of the overarm arm far from first substrate, and the permanent magnetism
Film is provided with third through-hole；Second distributed bragg reflector mirror is set in the third through-hole, and is being parallel to
Where first substrate on the direction of plane, second distributed bragg reflector mirror and the light hole are at least partly heavy
It closes.
Optionally, tunable laser further include: the first sacrificial layer and the second substrate；First sacrificial layer is set to institute
It states between contact layer and the overarm arm, is supported for the edge to the overarm arm, and in the overarm arm and described
The first cavity is formed between second electrode；Second substrate is set to second distributed bragg reflector mirror far from described
The side of first substrate, and the second cavity is formed between second substrate and the overarm arm；The light hole extends to
Second substrate is simultaneously connected to second cavity.
Optionally, the permanent magnetic thin film is set to the overarm arm close to the side of first substrate, and the permanent magnetism
Film is provided with fourth hole；Second distributed bragg reflector mirror is set in the fourth hole, and is being parallel to
Where first substrate on the direction of plane, second distributed bragg reflector mirror and the light hole are at least partly heavy
It closes.
Optionally, tunable laser further include: the second sacrificial layer, 3rd sacrifice layer and third substrate；Described second is sacrificial
Domestic animal layer is set between the second electrode and the overarm arm, is supported for the edge to the overarm arm, and in institute
State formation third cavity between overarm arm and the second electrode；It is close that the third substrate is set to the planar spiral winding
The side of first substrate；The 3rd sacrifice layer is set between the third substrate and the overarm arm, and described
The 4th cavity is formed between third substrate and the overarm arm；The light hole extends to the third substrate and with the described 4
Cavity connection.
Optionally, the tunable laser includes a planar spiral winding；The light hole is located at the plane spiral shell
The center of spin line circle.
Optionally, the tunable laser includes multiple planar spiral windings；Where being parallel to first substrate
On the direction of plane, the multiple planar spiral winding is symmetrical arranged relative to the light hole.
Second aspect, the embodiment of the invention provides a kind of production methods of tunable laser, are suitable for the present invention and appoint
The tunable laser that embodiment of anticipating provides, the production method of the tunable laser include:
Form the first substrate；And the first distributed bragg reflector mirror is sequentially formed in the side of first substrate, is had
Active layer, oxide layer and contact layer；It is formed in first substrate far from the side of first distributed bragg reflector mirror
First electrode forms second electrode far from the side of first substrate in the contact layer；
Overarm arm is formed far from the side of first substrate in the second electrode, attaches the overarm arm setting forever
Magnetic thin film, and attach the second distributed bragg reflector mirror of the overarm arm setting；In the permanent magnetic thin film far from described
Planar spiral winding is arranged in the side of first substrate, so that the permanent magnetic thin film and the planar spiral winding for being connected with alternating current
Between electromagnetic force the deformation quantity of the overarm arm is controlled.
Optionally, oxide layer is provided with first through hole；The is formed far from the side of first substrate in the contact layer
After two electrodes, further includes: etching forms the second through-hole in the second electrode, and high thoroughly in second through hole setting
Film；Where being parallel to first substrate on the direction of plane, the high transmittance film covers the first through hole.
Optionally, overarm arm is formed far from the side of first substrate in the second electrode, attaches the overarm arm
The permanent magnetic thin film of setting, and attach the second distributed bragg reflector mirror of the overarm arm setting, comprising: described second
Electrode and the high transmittance film deposit the first sacrificial layer on the direction far from first substrate；It is deposited on first sacrificial layer
Cantilever material layer；Permanent magnetic thin film is formed on the cantilever material layer, and the permanent magnetic thin film is etched into third through-hole；
Second distributed bragg reflector mirror is set in the third through-hole；The direction of plane where being parallel to first substrate
On, second distributed bragg reflector mirror is at least partly overlapped with the first through hole；The cantilever material layer is carved
Erosion forms cantilever beam, and etches first sacrificial layer and form the first sky to be formed between the overarm arm and the second electrode
Chamber；Planar spiral winding is set far from the side of first substrate in the permanent magnetic thin film, comprising: deposit on the second substrate
Planar spiral winding, and protective layer is formed far from the side of second substrate in the planar spiral winding；In the protection
Etching forms light hole on layer and second substrate, and forms second far from the side of the protective layer in second substrate
Cavity；Second cavity is connected to the light hole；Second substrate is bonded with the overarm arm；It is being parallel to
Where first substrate on the direction of plane, second distributed bragg reflector mirror and the light hole are at least partly heavy
It closes.
Optionally, overarm arm is formed far from the side of first substrate in the second electrode, attaches the overarm arm
The permanent magnetic thin film of setting, and attach the second distributed bragg reflector mirror of the overarm arm setting；In the permanent magnetic thin film
Planar spiral winding is arranged in side far from first substrate, comprising: is sequentially depositing to form third sacrifice on third substrate
Layer, overarm arm material layer and the second sacrificial layer；The third substrate deposit far from the side of the 3rd sacrifice layer to be formed it is flat
Surface helix coil；Protective layer is deposited far from the side of the third substrate in the planar spiral winding；It is sacrificial to etch described second
Domestic animal layer forms third cavity；The third cavity is in contact with the overarm arm material layer；It is close in the overarm arm material layer
The side of the third cavity forms permanent magnetic thin film；And fourth hole is formed in the permanent magnetic thin film layer；In the fourth hole
The second distributed bragg reflector mirror of interior formation；It etches the overarm arm material layer to form cantilever beam；It is sacrificial to etch the third
Domestic animal layer forms the 4th cavity, and the 4th cavity is contacted with the third substrate and the cantilever beam respectively；In the protective layer
Light hole is formed with the third substrate etching, the light hole is connected to the 4th cavity；It is being parallel to the third lining
Where bottom on the direction of plane, second distributed bragg reflector mirror is at least partly overlapped with the light hole；It will be described
Second sacrificial layer is bonded with the second electrode；Where being parallel to first substrate on the direction of plane, it is described go out
Unthreaded hole is at least partly overlapped with the first through hole.
In the present invention, tunable laser successively includes the first substrate, first electrode, the first Distributed Bragg Reflection
Mirror, active layer, oxide layer, contact layer and the second electrode lay, the effect of voltage difference between the first electrode and the second electrode
Under, active layer can be excited and emit beam, and second electrode is provided with the second distributed cloth far from the side of first electrode
Glug reflecting mirror, then light is constantly anti-between the first distributed bragg reflector mirror and the second distributed bragg reflector mirror
It penetrates, reinforce, then can emit perpendicular to the laser on the first substrate direction, furthermore the second distributed bragg reflector mirror attaches overarm
Arm is arranged, and permanent magnetic thin film is provided on cantilever beam, and permanent magnetic thin film is provided with snail in the side far from the first substrate
Coil, the planar spiral winding can generate electromagnetic force to permanent magnetic thin film under the action of alternating current, so that shape occurs for overarm arm
Become, so that the position of the second distributed bragg reflector mirror changes, to make the first distributed bragg reflector mirror and the
Resonant Intake System consecutive variations between two distributed bragg reflector mirrors are constantly changed, this hair with controlling the wavelength of transmitting laser
Bright embodiment changes Resonant Intake System by changing magnetic field, provides a kind of new side for realizing the tuning of VCSEL laser wavelength
Method, the tunable laser corresponding speed in the present embodiment is fast, it is high to adjust frequency, and structure is simple.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of VCSEL in the prior art；
Fig. 2 is a kind of structural schematic diagram of tunable laser provided in an embodiment of the present invention；
Fig. 3 is a kind of top view of tunable laser provided in an embodiment of the present invention；
Fig. 4 is the top view of another tunable laser provided in an embodiment of the present invention；
Fig. 5 is a kind of top view of overarm arm provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram of another tunable laser provided in an embodiment of the present invention；
Fig. 7 is a kind of flow diagram of the production method of tunable laser provided in an embodiment of the present invention；
Fig. 8 is the flow diagram of the production method of another tunable laser provided in an embodiment of the present invention；
Fig. 9 is a kind of structural schematic diagram for forming the tunable laser after second electrode provided in an embodiment of the present invention；
Figure 10 is a kind of tunable laser formed after the second distributed bragg reflector mirror provided in an embodiment of the present invention
The structural schematic diagram of device；
Figure 11 is a kind of structural schematic diagram for forming the tunable laser after the first cavity provided in an embodiment of the present invention；
Figure 12 is a kind of structural schematic diagram for forming the tunable laser after protective layer provided in an embodiment of the present invention；
Figure 13 is a kind of structural schematic diagram for forming the tunable laser after the second cavity provided in an embodiment of the present invention；
Figure 14 is the flow diagram of the production method of another tunable laser provided in an embodiment of the present invention；
Figure 15 is another structural representation for forming the tunable laser after second electrode provided in an embodiment of the present invention
Figure；
Figure 16 is a kind of formation 3rd sacrifice layer, overarm arm material layer and the second sacrificial layer provided in an embodiment of the present invention
The structural schematic diagram of the tunable laser of stepped construction；
Figure 17 is the structural schematic diagram of the tunable laser after another formation protective layer provided in an embodiment of the present invention；
Figure 18 be it is provided in an embodiment of the present invention it is another formed after the second distributed bragg reflector mirror tunable swash
The structural schematic diagram of light device；
Figure 19 is a kind of structural schematic diagram for forming the tunable laser after the 4th cavity provided in an embodiment of the present invention；
Figure 20 is the structural schematic diagram of the tunable laser after formation light hole provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Tunable laser provided in this embodiment is preferably VCSEL, and VCSEL is that one kind can go out perpendicular to chip surface
The laser of light, the typical structure of VCSEL is as shown in Figure 1, Fig. 1 is the structural schematic diagram of VCSEL in the prior art, VCSEL
It is provided with active layer 16, active layer 16 is generally made of Quantum Well, and Quantum Well can emit beam under the excitation of Injection Current,
16 two sides of active layer are respectively arranged with clad 17, are respectively arranged with the first Distributed Bragg Reflection in the two sides of clad 17
Mirror 14 and the second distributed bragg reflector mirror 15, each distributed bragg reflector mirror is by two kinds of refractive index with a thickness of λ/4
The material to differ greatly alternately produces, and two distributed bragg reflector mirrors are upwardly formed resonant cavity in vertical side, by measuring
Selection specific frequency is reflected and is superimposed in the light of sub- trap transmitting, ultimately forms the laser of some frequency range.Above structure is equal
It is arranged on substrate 13, and first electrode 11 is set in the outside of substrate 13, in the outer of the second distributed bragg reflector mirror 15
Second electrode 12 is arranged in side, and above-mentioned first electrode 11 and second electrode 12 can provide Injection Current for Quantum Well.
Compared to conventional laser, VCSEL has many advantages, as the outgoing wavelength of VCSEL depends on the extension of material
Growth, wavelength easy to accomplish accurately control；Chamber length, longitudinal mode spacing is big, single longitudinal mode easy to accomplish；It is emitted round light beam, far
Flied emission angle is small；Vertical exit light beam, is easily formed two-dimensional array；On-wafer measurement can be carried out, processing cost etc. is effectively reduced.
In order to make the outgoing tunable wave length of VCSEL, by MEMS (Micro-Electro-Mechanical
System, MEMS) VCSEL is introduced, the chamber that MEMS-VCSEL changes laser by electrostatic drive reflecting mirror is long, to adjust
Output wavelength.MEMS-VCSEL is that frequency sweep is realized by way of electrostatic drive.So-called electrostatic drive technology is exactly to utilize electricity
The technology that Coulomb force between lotus is driven as driving force.It is generated between two electrode plates by the electric field of control Voltage Establishment
One electrostatic force, and diaphragm is caused deformation occurs bending by electrode plate, deflection changes with voltage, and diaphragm drives the second distribution
The position of formula Bragg mirror 15 changes.After removing control voltage, electric field force disappears, and diaphragm is in elastic restoring force
It is returned to original state under effect, so that the second distributed bragg reflector mirror 15 also returns to initial position.
The embodiment of the invention provides a kind of tunable laser, as shown in Fig. 2, Fig. 2 is provided in an embodiment of the present invention
A kind of structural schematic diagram of tunable laser, the tunable laser include:
First substrate 13 and the first electrode 11 for being set to 13 side of the first substrate；It is remote to be set in turn in the first substrate 13
The first distributed bragg reflector mirror 14, active layer 16, oxide layer 18, contact layer 19 and second from 11 side of first electrode
Electrode 12；
Second electrode 12 is provided with overarm arm 20 far from the side of the first substrate 13, and it is thin to attach the permanent magnetism that overarm arm 20 is arranged
Film 21, and attach the second distributed bragg reflector mirror 15 that overarm arm 20 is arranged；Permanent magnetic thin film 21 is far from the first substrate 13
Side be provided with planar spiral winding 22 so that the electricity between permanent magnetic thin film 21 and the planar spiral winding 22 for being connected with alternating current
The deformation quantity of magnetic force change overarm arm 20.
Tunable laser provided in an embodiment of the present invention, tunable laser successively include the first substrate, first electrode,
First distributed bragg reflector mirror, active layer, oxide layer, contact layer and the second electrode lay, in first electrode and the second electricity
Under the action of voltage difference between pole, active layer can be excited and emit beam, and second electrode far from first electrode one
Side is provided with the second distributed bragg reflector mirror, then light is in the first distributed bragg reflector mirror and the second distributed Bradley
It constantly reflects, reinforce between lattice reflecting mirror, then can emit perpendicular to the laser on the first substrate direction, furthermore the second distributed cloth
Glug reflecting mirror attaches overarm arm setting, permanent magnetic thin film is provided on cantilever beam, and permanent magnetic thin film is in separate first substrate
Side is provided with planar spiral winding, which can generate electromagnetism to permanent magnetic thin film under the action of alternating current
Power, so that deformation occurs for overarm arm, so that the position of the second distributed bragg reflector mirror changes, to make the first distribution
Resonant Intake System consecutive variations between formula Bragg mirror and the second distributed bragg reflector mirror, to control transmitting laser
Wavelength constantly changes, and the embodiment of the present invention changes Resonant Intake System by changing magnetic field, and it is sharp to provide a kind of new realization VCSEL
The method of light device wavelength tuning, the tunable laser corresponding speed in the present embodiment is fast, and it is high to adjust frequency, and structure letter
It is single.
It is core of the invention thought above, following will be combined with the drawings in the embodiments of the present invention, to the embodiment of the present invention
In technical solution be clearly and completely described.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Under the premise of making creative work, every other embodiment obtained be shall fall within the protection scope of the present invention.
Optionally, planar spiral winding 22 may be provided with protective layer 23 far from the side of the first substrate 13, flat for covering
Surface helix coil 22；Protective layer 23 is provided with light hole 24, is used for outgoing laser beams.Connection plane is provided in protective layer 23
The metal wire of spiral winding 22 enables planar spiral winding 22 to receive external communication electricity.Protective layer 23 can be to plane
Spiral winding 22 and above-mentioned metal wire are protected.And protective layer 23 is provided with light hole 24, then by the first distributed Bradley
The laser that lattice reflecting mirror 14 and the second distributed bragg reflector mirror 15 reflect can be emitted by light hole 24.Optionally, it protects
The material of layer 23 can be silicon nitride, and silicon nitride is a kind of superhard substance, and it is reliable that itself, which has lubricity, and wear-resistant
Device protection materials.
It optionally, is a kind of top view of tunable laser provided in an embodiment of the present invention with reference to Fig. 3, Fig. 3.It is tunable
Laser may include a planar spiral winding 22；Light hole 24 is located at the center of planar spiral winding 22.Then snail
Coil 22 forms the electromagnetic field being uniformly arranged around light hole 24.
It optionally, can as shown in figure 4, Fig. 4 is the top view of another tunable laser provided in an embodiment of the present invention
Tuned laser also includes multiple planar spiral windings 22；On the direction for being parallel to 13 place plane of the first substrate, Duo Geping
Surface helix coil 22 is symmetrical arranged relative to light hole 24, then is equally capable of forming uniform electromagnetic field, illustratively, settable
4 planar spiral windings 22, and 4 planar spiral windings 22 are uniform, arranged symmetrically around light hole 24.
Optionally, planar spiral winding 22 can be using the high conductivity materials such as Pt, Ti, Au, above-mentioned high conductivity material
For main thin film conductor, the lower planar spiral winding 22 of above-mentioned thickness can be formed.
Optionally, with continued reference to Fig. 2, oxide layer 18 may be provided with first through hole 181；Where being parallel to the first substrate 13
On the direction of plane, first through hole 181 is at least partly overlapped with light hole 24.It is worth noting that, first through hole 181 is not logical
The through-hole that the modes such as over etching are formed, but the part that oxide layer 18 is not oxidized, the part that oxide layer 18 is oxidized form height
Area is hindered, electric current flowing can be inhibited, injects electric current from the not oxidized part in center, thus play the role of limiting electric current,
So first through hole 181 is not the through-hole on practical significance, but a current channel, also, in order to enable first through hole 181
The light of sending is projected by light hole 24, then first through hole 181 is at least partly overlapped with light hole 24, it is preferred that first through hole
181 can be completely coincident with light hole 24.
Optionally, second electrode 12 may be provided with the second through-hole 121；Contact layer 19 is arranged far from the side of the first substrate 13
There is high transmittance film 25, high transmittance film 25 is located in the second through-hole 121；It is high saturating on the direction for being parallel to 13 place plane of the first substrate
Film 25 covers first through hole 181.High transmittance film 25 can reinforce the exitance of light, and the second through-hole can be arranged in second electrode 12
121, and high transmittance film 25 is set in the second through-hole 121.In addition, high transmittance film 25 covers first through hole 181, to first through hole
The light of 181 outgoing plays the role of antireflective.
Optionally, Fig. 5 is a kind of top view of overarm arm provided in an embodiment of the present invention, and referring to figs. 2 and 5, permanent magnetism is thin
Film 21 may be disposed at side of the overarm arm 20 far from the first substrate 13, and permanent magnetic thin film 21 is provided with third through-hole 211；Second point
Cloth Bragg mirror 15 is set in third through-hole 211, and on the direction for being parallel to 13 place plane of the first substrate, the
Two distributed bragg reflector mirrors 15 are at least partly overlapped with light hole 24.
In embodiments of the present invention, the long change of laser cavity is by between planar spiral winding 22 and permanent magnetic thin film 21
Electromagnetism power drive.If applying high-frequency current to planar spiral winding 22, the surrounding space of planar spiral winding 22 will be produced
Raw changing magnetic field, and the permanent magnetic thin film 21 being located on cantilever beam 20 just will receive the effect of power in magnetic field, drive cantilever beam
20 vibrate up and down, correspondingly, the second distributed bragg reflector mirror 15 also vibrates up and down therewith.Second Distributed Bragg Reflection
The vibration of mirror 15 leads to the chamber formed between the second distributed bragg reflector mirror 15 and the first distributed bragg reflector mirror 14
Body length consecutive variations, so that the optical maser wavelength of outgoing be made constantly to change.Second distributed bragg reflector mirror 15 and light hole
24 are at least partly overlapped, and the laser that the second distributed bragg reflector mirror 15 is emitted is projected by light hole 24, excellent
Choosing, on the direction for being parallel to 13 place plane of the first substrate, the second distributed bragg reflector mirror 15 and light hole 24 are complete
Full weight is closed.
Further, on the direction for being parallel to 13 place plane of the first substrate, the second distributed bragg reflector mirror 15,
First through hole 181 and light hole 24 are completely coincident, to guarantee the smooth outgoing of laser beam.
Permanent magnetic thin film 21 may be disposed at the position of the second distributed bragg reflector mirror 15, then 21 institute of permanent magnetic thin film
The position of the overarm arm 2 of the displacement and 150 position of the second distributed bragg reflector mirror of overarm arm 2 at position
Size is moved to reach unanimity.Preferably, as shown in figure 5, the settable third through-hole 211 in the center of permanent magnetic thin film 21, and by
Two distributed bragg reflector mirrors 15 are set in third through-hole 211, then 15 position of the second distributed bragg reflector mirror
The displacement of the overarm arm 2 at place is the accurate displacement of the overarm arm 2 of 21 position of permanent magnetic thin film, so that with
Family can according to the electric current of planar spiral winding 22 it is big under the position of the second distributed bragg reflector mirror 15 is accurately controlled
System, to obtain the laser beam for needing frequency.Also, the second distributed bragg reflector mirror 15 is located at the center of permanent magnetic thin film 21
Position, field homogeneity, is quickly controlled herein convenient for growing to laser cavity.
Optionally, the material of cantilever beam 20 can be the material of good mechanical property, for example, silicon nitride, silicon carbide or polycrystalline
Silicon etc., above-mentioned material all have higher intensity and plasticity, and toughness is strong, then cantilever beam 20 is able to bear upper frequency
It vibrates up and down without being damaged.
Optionally, high-performance rare-earth material, such as NdFeB, SmCo can be used in permanent magnetic thin film 21, enables permanent magnetic thin film 21
It is enough to keep stronger magnetism for a long time, it is preferred that the high-performance rare-earth material of SmCo material can be chosen, which applies at present
Magnetic higher permanent-magnet material.
Optionally, with continued reference to Fig. 2, tunable laser can also include: the first sacrificial layer 26 and the second substrate 27；The
One sacrificial layer 26 is set between contact layer 19 and overarm arm 20, is supported for the edge to overarm arm 20, and is being hung oneself from a beam
The first cavity M is formed between arm 20 and second electrode 12；It is remote that second substrate 27 is set to the second distributed bragg reflector mirror 15
Side from the first substrate 13, and the second cavity N is formed between the second substrate 27 and overarm arm 20；Light hole 24 extends to
Two substrates 27 are simultaneously connected to the second cavity N.
First sacrificial layer 26 is used as knee wall, is used to support the edge of the overarm arm 20 of hollow out, and overarm arm 20 and the
The first cavity M is formed between two electrodes 12, forms the second cavity N between the second substrate 27, and the second substrate 27 is set to second
The side of distributed bragg reflector mirror 15 and permanent magnetic thin film 21 far from the first substrate 13, and the second Distributed Bragg Reflection
Mirror 15 and permanent magnetic thin film 21 are set in the second cavity N, then the upper side and lower side of overarm arm 20 is respectively cavity structure, convenient for outstanding
Beam arm 20 is vibrated up and down under the action of electromagnetic force.And the light hole 24 on protective layer 23 extends to the second substrate 27,
It is connected to the second cavity N.
Optionally, the material of the first sacrificial layer 26 can for phosphorosilicate glass (phosphor silicate glass, PSG),
Silica etc. so that the first sacrificial layer 26 has higher-strength, and is easily removed by etching, forms support convenient for etching
Column or supporting wall structure.
Permanent magnetic thin film may be disposed at side of the overarm arm 20 far from the first substrate 13, as shown in Fig. 2, certainly, with reference to Fig. 6,
Fig. 6 is the structural schematic diagram of another tunable laser provided in an embodiment of the present invention, and permanent magnetic thin film 21 can also be set to
Overarm arm 20 is close to the side of the first substrate 13, and permanent magnetic thin film 21 is provided with fourth hole 212；Second distributed Bragg is anti-
It penetrates mirror 15 to be set in fourth hole 212, and on the direction for being parallel to 13 place plane of the first substrate, the second distributed Bradley
Lattice reflecting mirror 15 is at least partly overlapped with light hole 24.
Permanent magnetic thin film 21 is set in overarm arm 20 close to the side of the first substrate 13, and the second Distributed Bragg Reflection
Mirror 15 is set in the fourth hole 212 of permanent magnetic thin film 21, and optionally, fourth hole 212 is located at the centre bit of permanent magnetic thin film 21
It sets, so that vibration caused by the second distributed bragg reflector mirror 15 is more accurate, and improves the corresponding of tunable laser
Speed.Similarly, the second distributed bragg reflector mirror 15 is at least partly overlapped with light hole 24, in order to smoothly going out for laser beam
It penetrates.Preferably, on the direction for being parallel to 13 place plane of the first substrate, the second distributed bragg reflector mirror 15, first is logical
Hole 181 and light hole 24 are completely coincident.
Optionally, with continued reference to Fig. 6, tunable laser can also include: the second sacrificial layer 28,29 and of 3rd sacrifice layer
Third substrate 30；Second sacrificial layer 28 is set between second electrode 12 and overarm arm 20, for the edge to overarm arm 20 into
Row support, and third cavity M ' is formed between overarm arm 20 and second electrode 12；Third substrate 30 is set to snail line
Circle 22 is close to the side of the first substrate 13；3rd sacrifice layer 29 is set between third substrate 30 and overarm arm 20, and in third
The 4th cavity N ' is formed between substrate 30 and overarm arm 20；Light hole 24 extends to third substrate 30 and connects with the 4th cavity N '
It is logical.
Second sacrificial layer 28 is set between second electrode 12 and overarm arm 20, and overarm arm 20 and second electrode 12 it
Between form third cavity M ', permanent magnetic thin film 21 and the second distributed bragg reflector mirror 15 be set in third cavity M ', third
Sacrificial layer 29 is set between third substrate 30 and overarm arm 20, and the 4th sky is formed between third substrate 30 and overarm arm 20
Chamber N ', then about 20 two sides of overarm arm are respectively arranged with the 4th cavity N ' and third cavity M ', to realize the vibration of overarm arm 20.
Light hole 24 on protective layer 23 extends to third substrate 30 and is connected to the 4th cavity N '.
Optionally, the material of the second sacrificial layer 28 can for phosphorosilicate glass (phosphor silicate glass, PSG),
Silica etc. so that the first sacrificial layer 26 has higher-strength, and is easily removed by etching, forms support convenient for etching
Column or supporting wall structure.
Optionally, the material of 3rd sacrifice layer 29 can be the materials such as silica, 3rd sacrifice layer 29 equally have compared with
High rigidity is supported third substrate 30.
To sum up, Fig. 2 and Fig. 6 respectively illustrates two kinds of differences of the tunable laser by electromagnetic force regulative mode frequency modulation
It is anti-to carry out the second distributed Bragg by the electromagnetic force between planar spiral winding 22 and permanent magnetic thin film 21 for structure chart
Penetrate the adjusting of 15 position of mirror.
Based on same design, the embodiment of the present invention also provides a kind of production method of tunable laser, is suitable for this hair
The tunable laser that bright any embodiment provides.Fig. 7 is a kind of production of tunable laser provided in an embodiment of the present invention
The flow diagram of method, as shown in fig. 7, the production method of the tunable laser of the present embodiment includes the following steps:
S101, the first substrate is formed；And the first distributed bragg reflector mirror is sequentially formed in the side of the first substrate, is had
Active layer, oxide layer and contact layer；First electrode is formed far from the side of the first distributed bragg reflector mirror in the first substrate,
Second electrode is formed far from the side of the first substrate in contact layer.
S102, overarm arm is formed far from the side of the first substrate in second electrode, attaches the permanent magnetic thin film of overarm arm setting,
And attach the second distributed bragg reflector mirror of overarm arm setting；It is flat in side setting of the permanent magnetic thin film far from the first substrate
Surface helix coil, so that the deformation quantity of electromagnetic force between permanent magnetic thin film and the planar spiral winding for being connected with alternating current to overarm arm
It is controlled.
The production method of tunable laser provided in an embodiment of the present invention, tunable laser successively include the first lining
Bottom, first electrode, the first distributed bragg reflector mirror, active layer, oxide layer, contact layer and the second electrode lay, first
Under the action of voltage difference between electrode and second electrode, active layer can be excited and emit beam, and second electrode is separate
The side of first electrode is provided with the second distributed bragg reflector mirror, then light is in the first distributed bragg reflector mirror and
It constantly reflects, reinforce between two distributed bragg reflector mirrors, then can emit perpendicular to the laser on the first substrate direction, furthermore
Second distributed bragg reflector mirror attaches overarm arm setting, is provided with permanent magnetic thin film on cantilever beam, and permanent magnetic thin film is remote
Side from the first substrate is provided with planar spiral winding, and the planar spiral winding is under the action of alternating current to permanent magnetic thin film energy
Electromagnetic force is enough generated, so that deformation occurs for overarm arm, so that the position of the second distributed bragg reflector mirror changes, thus
Make the Resonant Intake System consecutive variations between the first distributed bragg reflector mirror and the second distributed bragg reflector mirror, with control
The wavelength of transmitting laser constantly changes, the embodiment of the present invention changes Resonant Intake System by changing magnetic field, provide it is a kind of newly
Realize the method that VCSEL laser wavelength tunes, the tunable laser corresponding speed in the present embodiment is fast, frequency height is adjusted,
And structure is simple.
Optionally, oxide layer may be provided with first through hole；Second electrode is formed far from the side of the first substrate in contact layer
Later, further includes: etching forms the second through-hole on the second electrode, and high transmittance film is arranged in the second through hole；It is being parallel to
Where one substrate on the direction of plane, high transmittance film covers first through hole.
On the basis of the above embodiments, overarm arm is formed far from the side of the first substrate in second electrode, attached outstanding
Beam arm setting permanent magnetic thin film, and attach overarm arm setting the second distributed bragg reflector mirror specific embodiment into
Row is described in detail, and is the process signal of the production method of another tunable laser provided in an embodiment of the present invention with reference to Fig. 8, Fig. 8
Figure, the production method of the tunable laser, comprising:
S201, the first substrate is formed；And the first distributed bragg reflector mirror is sequentially formed in the side of the first substrate, is had
Active layer, oxide layer and contact layer；First electrode is formed far from the side of the first distributed bragg reflector mirror in the first substrate,
Second electrode is formed far from the side of the first substrate in contact layer.
As shown in figure 9, Fig. 9 is a kind of knot for forming the tunable laser after second electrode provided in an embodiment of the present invention
Structure schematic diagram is sequentially forming the first substrate 13, the first distributed bragg reflector mirror 14, clad 17, active layer 16, cladding
Layer 17, oxide layer 18 and contact layer 19 are hereafter heavy in side of first substrate 13 far from the first distributed bragg reflector mirror 14
Product forms first electrode 11, second electrode 12 is formed far from the side of the first substrate 13 in contact layer 19, with reference to Fig. 9 it is found that oxygen
Change layer 18 and be provided with first through hole 181, for providing electric current transmission channel, first through hole 181 is that oxide layer 18 is not oxidized
Region, rather than the through-hole on practical significance.
S202, on the second electrode etching form the second through-hole, and high transmittance film is arranged in the second through hole；It is being parallel to
Where one substrate on the direction of plane, high transmittance film covers the first through hole of oxide layer setting.
With continued reference to Fig. 9, etching forms the second through-hole 121 in second electrode 12, and forms height thoroughly in the second through-hole 121
Film 25, and high transmittance film 25 can cover the first through hole 181 of the setting of oxide layer 18.It is worth noting that, second electrode 12
Marginal portion is also etched away, and exposes contact layer 19, the first sacrificial layer to be arranged on contact layer 19.
S203, the first sacrificial layer is deposited on the direction of second electrode and high transmittance film far from the first substrate.
S204, cantilever material layer is deposited on the first sacrificial layer.
S205, permanent magnetic thin film is formed on cantilever material layer, and permanent magnetic thin film is etched into third through-hole.
S206, the second distributed bragg reflector mirror is set in third through-hole；The plane where being parallel to the first substrate
Direction on, the second distributed bragg reflector mirror is at least partly overlapped with first through hole.
Figure 10 is a kind of tunable laser formed after the second distributed bragg reflector mirror provided in an embodiment of the present invention
The structural schematic diagram of device, according to step S203~S206 it is found that first in second electrode 12 and high transmittance film 25 far from the first substrate
The first sacrificial layer 26 is deposited on 13 direction, the first sacrificial layer 26 covers entire the on the direction for being parallel to the first substrate 13
One substrate 13, and cantilever material layer is deposited on the first sacrificial layer 26 of flood, cantilever material layer is flood covering first
The structure of sacrificial layer 26, and permanent magnetic thin film 21 is formed on cantilever material layer, and etching forms third on permanent magnetic thin film 21
Through-hole 211, so that the second distributed bragg reflector mirror 15 can be deposited in third through-hole 211.
Optionally, the method that chemical vapor deposition can be used in cantilever material layer is formed, and the permanent magnetic thin film 21 can be selected
Magnetron sputtering method is configured, and high-performance rare-earth material, such as NdFeB, SmCo can be used.
S207, it etches cantilever material layer to form cantilever beam, and etches the first sacrificial layer to form overarm arm and second
The first cavity is formed between electrode.
Figure 11 is a kind of structural schematic diagram for forming the tunable laser after the first cavity provided in an embodiment of the present invention,
Cantilever material layer etches to form cantilever beam 20, is performed etching by the engraved structure of cantilever beam 20 to the first sacrificial layer 26, with
It is formed between overarm arm 20 and second electrode 12 and forms the first cavity M.
S208, the deposition plane spiral winding on the second substrate, and in side of the planar spiral winding far from the second substrate
Form protective layer.
Figure 12 is a kind of structural schematic diagram for forming the tunable laser after protective layer provided in an embodiment of the present invention, separately
The second substrate 27 of outer acquisition, and the deposition plane spiral winding 22 on the second substrate, and power supply is arranged to planar spiral winding 22
Lead (is not shown) in Figure 12, meanwhile, in order to be protected to planar spiral winding 22 and power supply lead wire, in snail line
It sinks to the bottom to form protective layer 23 on circle 22.Optionally, planar spiral winding 22 can use the high conductivity materials such as Pt, Ti, Au, on
Stating high conductivity material is main thin film conductor.
S209, etching forms light hole on protective layer and the second substrate, and in side of second substrate far from protective layer
Form the second cavity；Second cavity is connected to light hole.
It is the knot of the tunable laser after a kind of second cavity of formation provided in an embodiment of the present invention with reference to Figure 13, Figure 13
Structure schematic diagram, the etching of light hole 24 is carried out to protective layer 23, and extends to the second substrate of part 27, and in 27 shape of the second substrate
At the second cavity N, and it is connected to the second cavity N with light hole 24.
S210, the second substrate is bonded with overarm arm；Where being parallel to the first substrate on the direction of plane, second
Distributed bragg reflector mirror is at least partly overlapped with light hole.
Structure structure with the one shown in figure 11 in Figure 13 is mutually bonded, tunable laser shown in Fig. 2 is formed
Complete structure, as shown in Fig. 2, where being parallel to the first substrate on the direction of plane, first through hole 181, high transmittance film 25, second
There is overlapping region in distributed bragg reflector mirror 15 and light hole 24, with realize wavelength consecutive variations laser beam go out
It penetrates.
In another specific example of the embodiment of the present invention, equally formed in second electrode far from the side of the first substrate outstanding
Beam arm attaches the permanent magnetic thin film of overarm arm setting, and attaches the tool of the second distributed bragg reflector mirror of overarm arm setting
Body technology process is described in detail, and is the production of another tunable laser provided in an embodiment of the present invention with reference to Figure 14, Figure 14
The flow diagram of method, the production method of the tunable laser, comprising:
S301, the first substrate is formed；And the first distributed bragg reflector mirror is sequentially formed in the side of the first substrate, is had
Active layer, oxide layer and contact layer；First electrode is formed far from the side of the first distributed bragg reflector mirror in the first substrate,
Second electrode is formed far from the side of the first substrate in contact layer.
It is the tunable laser after another formation second electrode provided in an embodiment of the present invention with reference to Figure 15, Figure 15
Structural schematic diagram is sequentially forming the first substrate 13, the first distributed bragg reflector mirror 14, clad 17, active layer 16, packet
Coating 17, oxide layer 18 and contact layer 19, hereafter in side of first substrate 13 far from the first distributed bragg reflector mirror 14
Deposition form first electrode 11, contact layer 19 far from the first substrate 13 side formed second electrode 12, with reference to Figure 15 it is found that
Oxide layer 18 is provided with first through hole 181, and for providing electric current transmission channel, first through hole 181 is that oxide layer 18 is not oxidized
Region, rather than the through-hole on practical significance.
S302, on the second electrode etching form the second through-hole, and high transmittance film is arranged in the second through hole；It is being parallel to
Where one substrate on the direction of plane, high transmittance film covers first through hole.
5 are continued to refer to figure 1, etching forms the second through-hole 121 in second electrode 12, and height is formed in the second through-hole 121
Permeable membrane 25, and high transmittance film 25 can cover the first through hole 181 of the setting of oxide layer 18.It is worth noting that, second electrode 12
Marginal portion be not etched away, second electrode 12 is bonded with other structures layer.
S303, it is sequentially depositing to form 3rd sacrifice layer, overarm arm material layer and the second sacrificial layer on third substrate.
It is a kind of formation 3rd sacrifice layer, the overarm arm material layer and that the embodiment of the present invention passes through with reference to Figure 16, Figure 16
The structural schematic diagram of the tunable laser of the stepped construction of two sacrificial layers, it is another to obtain third substrate 30, and successively served as a contrast in third
3rd sacrifice layer 29, overarm arm material layer and the second sacrificial layer 28 are deposited on bottom 30.
S304, it deposits to form planar spiral winding far from the side of 3rd sacrifice layer in third substrate.
S305, protective layer is deposited far from the side of third substrate in planar spiral winding.
It is the knot of the tunable laser after another formation protective layer provided in an embodiment of the present invention with reference to Figure 17, Figure 17
Structure schematic diagram deposits to form planar spiral winding 22, optionally, plane in third substrate 20 far from the side of 3rd sacrifice layer 29
Spiral winding 22 can be main thin film conductor using the high conductivity materials such as Pt, Ti, Au, above-mentioned high conductivity material.
And protective layer 23 is deposited far from the side of third substrate 30 in planar spiral winding 22, the material of protective layer 23 can be with
For silicon nitride, silicon nitride is a kind of superhard substance, and it is positive means protection materials that itself, which has lubricity, and wear-resistant.
S306, the second sacrificial layer of etching form third cavity；Third cavity is in contact with overarm arm material layer.
S307, permanent magnetic thin film is formed close to the side of third cavity in overarm arm material layer；And it is formed in permanent magnetic thin film layer
Fourth hole.
S308, the second distributed bragg reflector mirror is formed in fourth hole.
It is after another kind provided in an embodiment of the present invention forms the second distributed bragg reflector mirror with reference to Figure 18, Figure 18
The structural schematic diagram of tunable laser performs etching the second sacrificial layer 28 to form third cavity M ', later in third cavity
Cantilever material layer is attached in M ' and forms permanent magnetic thin film 21, and fourth hole 211 is formed to permanent magnetic thin film 21, in fourth hole
Form the second distributed bragg reflector mirror 15.
S309, it etches overarm arm material layer to form cantilever beam.
S310, etching 3rd sacrifice layer form the 4th cavity, and the 4th cavity is contacted with third substrate and cantilever beam respectively.
It is the knot of the tunable laser after a kind of 4th cavity of formation provided in an embodiment of the present invention with reference to Figure 19, Figure 19
Structure schematic diagram etches overarm arm material layer to form cantilever beam 20, and by the engraved structure of cantilever beam 20 by 3rd sacrifice layer
29 etchings form the 4th cavity N ', and the 4th cavity N ' is set between third substrate 30 and cantilever beam 20, then third cavity M ' and
The structure setting of 4th cavity N ' enables permanent magnetic thin film 21 to drive 20 vertical tremor of cantilever beam under the action of electromagnetic force, with
Realize the variation of Resonant Intake System between the first distributed bragg reflector mirror 14 and the second distributed bragg reflector mirror 15, thus
Optical maser wavelength is regulated and controled.
S311, light hole is formed in protective layer and third substrate etching, light hole is connected to the 4th cavity；It is being parallel to
Where three substrates on the direction of plane, the second distributed bragg reflector mirror is at least partly overlapped with light hole.
It is the structural representation of the tunable laser after formation light hole provided in an embodiment of the present invention with reference to Figure 20, Figure 20
Figure carries out the setting of light hole 24 on protective layer 23, and light hole 24 extends in third substrate 30, and with the 4th cavity
N ' connection.
S312, the second sacrificial layer is bonded with second electrode；Where being parallel to the first substrate on the direction of plane,
Light hole is at least partly overlapped with first through hole.
Tunable laser structure shown in Figure 20 is bonded with the tunable laser structure shown in Figure 15, is had
Body, the second sacrificial layer 28 is bonded with second electrode 12, to form complete tunable laser knot shown in fig. 6
Structure.Optionally, where being parallel to the first substrate on the direction of plane, the distributed cloth of first through hole 181, high transmittance film 25, second
There is overlapping region in glug reflecting mirror 15 and light hole 24, to realize the outgoing of the laser beam of wavelength consecutive variations.
Tunable laser provided in this embodiment, the long change of laser cavity is thin by planar spiral winding 22 and permanent magnetism
Electromagnetism power drive between film 21.If to the application high-frequency current of planar spiral winding 22, around planar spiral winding 22
Space will generate changing magnetic field, and the permanent magnetic thin film 21 being located on cantilever beam 20 just will receive the effect of power in magnetic field,
Cantilever beam 20 is driven to vibrate up and down, correspondingly, the second distributed bragg reflector mirror 15 also vibrates up and down therewith.Second is distributed
The vibration of Bragg mirror 15 cause the second distributed bragg reflector mirror 15 and the first distributed bragg reflector mirror 14 it
Between the cavity length consecutive variations that are formed, so that the optical maser wavelength of outgoing be made constantly to change, and make tunable laser shadow
Sound speed is fast, and structure is simple, and technique is easily realized.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (14)
1. a kind of tunable laser characterized by comprising
First substrate and the first electrode for being set to first one side of substrate；First substrate is set in turn in far from institute
State the first distributed bragg reflector mirror, active layer, oxide layer, contact layer and the second electrode of first electrode side；
The second electrode is provided with overarm arm far from the side of first substrate, and the permanent magnetism for attaching the overarm arm setting is thin
Film, and attach the second distributed bragg reflector mirror of the overarm arm setting；The permanent magnetic thin film is far from first lining
The side at bottom is provided with planar spiral winding, so that between the permanent magnetic thin film and the planar spiral winding for being connected with alternating current
Electromagnetic force the deformation quantity of the overarm arm is controlled.
2. tunable laser according to claim 1, which is characterized in that
Matcoveredn is arranged far from the side of first substrate in the planar spiral winding, for covering the snail line
Circle；
The protective layer is provided with light hole, is used for outgoing laser beams.
3. tunable laser according to claim 2, which is characterized in that
The oxide layer is provided with first through hole；
Where being parallel to first substrate on the direction of plane, the first through hole and the light hole are at least partly heavy
It closes.
4. tunable laser according to claim 3, which is characterized in that
The second electrode is provided with the second through-hole；
The contact layer is provided with high transmittance film far from the side of first substrate, and the high transmittance film is located at second through-hole
It is interior；
Where being parallel to first substrate on the direction of plane, the high transmittance film covers the first through hole.
5. tunable laser according to claim 2, which is characterized in that
The permanent magnetic thin film is set to side of the overarm arm far from first substrate, and the permanent magnetic thin film is provided with
Three through-holes；
Second distributed bragg reflector mirror is set in the third through-hole, and where being parallel to first substrate
On the direction of plane, second distributed bragg reflector mirror is at least partly overlapped with the light hole.
6. tunable laser according to claim 5, which is characterized in that further include: the first sacrificial layer and the second substrate；
First sacrificial layer is set between the contact layer and the overarm arm, is carried out for the edge to the overarm arm
Support, and the first cavity is formed between the overarm arm and the second electrode；
Second substrate is set to side of second distributed bragg reflector mirror far from first substrate, and in institute
It states and forms the second cavity between the second substrate and the overarm arm；The light hole extends to second substrate and with described
The connection of two cavitys.
7. tunable laser according to claim 2, which is characterized in that
The permanent magnetic thin film is set to the overarm arm close to the side of first substrate, and the permanent magnetic thin film is provided with
Four through-holes；
Second distributed bragg reflector mirror is set in the fourth hole, and where being parallel to first substrate
On the direction of plane, second distributed bragg reflector mirror is at least partly overlapped with the light hole.
8. tunable laser according to claim 7, which is characterized in that further include: the second sacrificial layer, 3rd sacrifice layer
With third substrate；
Second sacrificial layer is set between the second electrode and the overarm arm, for the edge to the overarm arm into
Row support, and third cavity is formed between the overarm arm and the second electrode；
The third substrate is set to the planar spiral winding close to the side of first substrate；
The 3rd sacrifice layer is set between the third substrate and the overarm arm, and in the third substrate and described outstanding
The 4th cavity is formed between beam arm；The light hole extends to the third substrate and is connected to the 4th cavity.
9. tunable laser according to claim 2, which is characterized in that
The tunable laser includes a planar spiral winding；The light hole is located in the planar spiral winding
The heart.
10. tunable laser according to claim 2, which is characterized in that
The tunable laser includes multiple planar spiral windings；The direction of plane where being parallel to first substrate
On, the multiple planar spiral winding is symmetrical arranged relative to the light hole.
11. a kind of production method of tunable laser, which is characterized in that be suitable for as described in any one of claim 1-10
Tunable laser, the production method of the tunable laser includes:
Form the first substrate；And the side of first substrate sequentially form the first distributed bragg reflector mirror, active layer,
Oxide layer and contact layer；The first electricity is formed far from the side of first distributed bragg reflector mirror in first substrate
Pole forms second electrode far from the side of first substrate in the contact layer；
Overarm arm is formed far from the side of first substrate in the second electrode, the permanent magnetism for attaching the overarm arm setting is thin
Film, and attach the second distributed bragg reflector mirror of the overarm arm setting；In the permanent magnetic thin film far from described first
Planar spiral winding is arranged in the side of substrate, so that between the permanent magnetic thin film and the planar spiral winding for being connected with alternating current
Electromagnetic force the deformation quantity of the overarm arm is controlled.
12. the production method of tunable laser according to claim 11, oxide layer are provided with first through hole；
After the contact layer forms second electrode far from the side of first substrate, further includes:
Etching forms the second through-hole in the second electrode, and high transmittance film is arranged in second through hole；Being parallel to
Where stating the first substrate on the direction of plane, the high transmittance film covers the first through hole.
13. the production method of tunable laser according to claim 12, which is characterized in that remote in the second electrode
Side from first substrate forms overarm arm, attaches the permanent magnetic thin film of the overarm arm setting, and attaches the overarm
Second distributed bragg reflector mirror of arm setting, comprising:
The first sacrificial layer is deposited on the direction of the second electrode and the high transmittance film far from first substrate；
Cantilever material layer is deposited on first sacrificial layer；
Permanent magnetic thin film is formed on the cantilever material layer, and the permanent magnetic thin film is etched into third through-hole；
Second distributed bragg reflector mirror is set in the third through-hole；The plane where being parallel to first substrate
On direction, second distributed bragg reflector mirror is at least partly overlapped with the first through hole；
It etches the cantilever material layer to form cantilever beam, and etches first sacrificial layer to form the overarm arm and institute
It states and forms the first cavity between second electrode；
Planar spiral winding is set far from the side of first substrate in the permanent magnetic thin film, comprising:
The deposition plane spiral winding on the second substrate, and in side shape of the planar spiral winding far from second substrate
At protective layer；
Etching forms light hole on the protective layer and second substrate, and in second substrate far from the protective layer
Side formed the second cavity；Second cavity is connected to the light hole；
Second substrate is bonded with the overarm arm；Where being parallel to first substrate on the direction of plane,
Second distributed bragg reflector mirror is at least partly overlapped with the light hole.
14. the production method of tunable laser according to claim 12, which is characterized in that remote in the second electrode
Side from first substrate forms overarm arm, attaches the permanent magnetic thin film of the overarm arm setting, and attaches the overarm
Second distributed bragg reflector mirror of arm setting；Plane spiral shell is set far from the side of first substrate in the permanent magnetic thin film
Spin line circle, comprising:
It is sequentially depositing to form 3rd sacrifice layer, overarm arm material layer and the second sacrificial layer on third substrate；
It deposits to form planar spiral winding far from the side of the 3rd sacrifice layer in the third substrate；
Protective layer is deposited far from the side of the third substrate in the planar spiral winding；
It etches second sacrificial layer and forms third cavity；The third cavity is in contact with the overarm arm material layer；
Permanent magnetic thin film is formed close to the side of the third cavity in the overarm arm material layer；And in the permanent magnetic thin film layer shape
At fourth hole；
The second distributed bragg reflector mirror is formed in the fourth hole；
It etches the overarm arm material layer to form cantilever beam；
Etch the 3rd sacrifice layer and form the 4th cavity, the 4th cavity respectively with the third substrate and the cantilever beam
Contact；
Light hole is formed in the protective layer and the third substrate etching, the light hole is connected to the 4th cavity；?
Where being parallel to the third substrate on the direction of plane, second distributed bragg reflector mirror and the light hole are at least
It partially overlaps；
Second sacrificial layer is bonded with the second electrode；The direction of plane where being parallel to first substrate
On, the light hole is at least partly overlapped with the first through hole.
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