CN109830513B - Array substrate, preparation method thereof and display panel - Google Patents
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- CN109830513B CN109830513B CN201910093779.9A CN201910093779A CN109830513B CN 109830513 B CN109830513 B CN 109830513B CN 201910093779 A CN201910093779 A CN 201910093779A CN 109830513 B CN109830513 B CN 109830513B
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Abstract
The invention relates to the technical field of display, in particular to an array substrate, a preparation method thereof and a display panel. The method is used for solving the problems of coffee ring effect caused by the trapezoidal structure adopted by the pixel defining layer and cathode layer fault caused by the inverted trapezoidal structure adopted by the related technology. An array substrate, comprising: the pixel definition layer divides the substrate into a plurality of sub-pixel areas; the pixel defining layer comprises a first defining layer and a second defining layer which are sequentially stacked from bottom to top, wherein the width of the lower surface of the second defining layer is larger than that of the upper surface of the first defining layer, so that an indentation structure relative to the second defining layer is formed on two sides of the first defining layer along the width direction. The embodiment of the invention is used for manufacturing the OLED display panel by an ink-jet printing technology.
Description
Technical Field
The invention relates to the technical field of display, in particular to an array substrate, a preparation method thereof and a display panel.
Background
At present, the most effective way to realize low-cost and large-area full-color display is to manufacture OLED (Organic Light-Emitting Diode) display panels and QLED (Quantum Dot Light Emitting Diodes) display panels by using an inkjet printing technology.
Disclosure of Invention
The main objective of the present invention is to provide an array substrate, a method for manufacturing the same, and a display panel, so as to solve the problems of the coffee ring effect caused by the trapezoidal structure adopted by the pixel defining layer and the cathode layer fault caused by the inverted trapezoidal structure adopted by the related art.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, an embodiment of the present invention provides an array substrate, including: a substrate, and a pixel defining layer formed on the substrate, the pixel defining layer dividing the substrate into a plurality of sub-pixel regions; the pixel defining layer comprises a first defining layer and a second defining layer which are sequentially stacked from bottom to top, wherein the width of the lower surface of the second defining layer is larger than that of the upper surface of the first defining layer, so that an indentation structure relative to the second defining layer is formed on two sides of the first defining layer in the width direction.
Optionally, the thickness of the first defining layer is 0.5-1.5 micrometers, and the thickness of the second defining layer is 0.5-1.0 micrometers.
Optionally, a hydrophobic film is formed on the upper surface of the second defining layer.
Optionally, the hydrophobic film is a fluorocarbon polymer film.
Optionally, the first defining layer is a silicon nitride film, and the second defining layer is a silicon oxide film.
Optionally, a light emitting function layer is disposed in the subpixel region, and a difference between a thickness of the light emitting function layer and a thickness of the first defining layer is greater than or equal to 0 and less than or equal to 100 nanometers.
Optionally, the array substrate further includes an anode layer formed between the substrate and the pixel defining layer, and a cathode layer formed on the light emitting function layer and the pixel defining layer, wherein the anode layer includes an anode disposed in each of the sub-pixel regions.
Optionally, the anode layer includes a reflective metal electrode layer and a transparent electrode layer, which are sequentially stacked from bottom to top; the cathode layer comprises a metal electrode layer and a transparent electrode protection layer which are sequentially stacked from bottom to top.
In a second aspect, an embodiment of the present invention provides a display panel, including the array substrate as described above.
In a third aspect, an embodiment of the present invention provides a method for manufacturing an array substrate, including: forming a pixel defining layer on a substrate, the pixel defining layer dividing the substrate into a plurality of sub-pixel regions; the pixel defining layer comprises a first defining layer and a second defining layer which are sequentially stacked from bottom to top, the width of the lower surface of the second defining layer is larger than that of the upper surface of the first defining layer, so that an indentation structure relative to the second defining layer is formed on two sides of the first defining layer along the width direction, and a hydrophobic film is formed on the upper surface of the second defining layer; wherein the etching selection ratio of the first defining layer is larger than that of the second defining layer, and the first defining layer and the second defining layer are formed by the same patterning process.
Optionally, the method further includes: and carrying out plasma treatment on the exposed surface of the second defining layer by using fluorocarbon so as to form a hydrophobic film on the upper surface of the second defining layer.
The embodiment of the invention provides an array substrate, a preparation method thereof and a display panel, wherein the pixel defining layer comprises a first defining layer and a second defining layer which are sequentially stacked from bottom to top, and the width of the lower surface of the second defining layer is larger than that of the upper surface of the first defining layer, so that a retraction structure relative to the second defining layer is formed on two sides of the first defining layer along the width direction, therefore, when a light-emitting functional layer is formed by ink jet, due to the retraction structure, ink drops can be spread out more uniformly under the capillary action, and the coffee ring effect when the ink drops are dried can be reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a related art for generating comet points by ink droplets in a luminescent functional layer of an inkjet printer;
fig. 2 is a schematic structural view illustrating a structure of a light emitting functional layer formed by inkjet printing when a vertical cross section of a pixel defining layer along a width direction is a trapezoidal structure according to the related art;
fig. 3 is a schematic structural view illustrating a structure in which a light emitting functional layer and a cathode layer are formed by inkjet printing when a vertical cross section of a pixel defining layer in a width direction is an inverted trapezoidal structure according to the related art;
fig. 4 is a schematic structural diagram of an array substrate according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another array substrate according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a TFT array, a planarization layer and an anode layer formed on a substrate according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a silicon nitride film and a silicon oxide film formed on the basis of FIG. 6 according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of masking the silicon oxide film and the silicon nitride film based on FIG. 7 according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a second definition layer formed on the substrate shown in FIG. 8 according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a first defining layer formed on the substrate shown in FIG. 9 according to an embodiment of the present invention;
FIG. 11 is a schematic diagram illustrating a structure of the second defining layer after removing the photoresist on the second defining layer based on the structure shown in FIG. 10 according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of forming a light emitting functional layer on the basis of fig. 4 according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the case of manufacturing a light-emitting functional layer using an inkjet printing technique, as shown in fig. 1, it is necessary to form a pixel defining layer 2 on a substrate 1 and then to inkjet a solution of a material of the light-emitting functional layer into an opening (subpixel region a) formed by the pixel defining layer 2 to form the light-emitting functional layer.
In order to prevent ink from overflowing around the opening during printing, the pixel defining layer 2 is usually configured to have a narrow top and a flat bottom, that is, as shown in fig. 1 and 2, the vertical cross section of the pixel defining layer 2 along the width direction (the width direction refers to the direction of the line connecting two sub-pixel regions a adjacent to the pixel defining layer 2, and is shown as arrow a in fig. 2) is a trapezoid structure, and the pixel defining layer 2 is usually formed on the flat layer and the anode layer, in such a structure, due to the difference of the surface energy between the contact points of the ink droplets and the pixel defining layer 2 and the drying behavior of the light emitting functional layer itself, an uneven film with thick edges and thin middle, that is, a coffee ring effect, is easily formed after drying, if the coffee ring effect is to be avoided, the material of the pixel defining layer 2 and the composition of the ink droplets need to be adjusted, and the drying temperature of the ink droplets also need to be adjusted, The pressure intensity and other film forming conditions are adjusted, and the research and development difficulty is increased.
In order to solve the above coffee ring effect, as shown in fig. 3, the pixel defining layer 2 is configured to be a structure with a wide top and a narrow bottom, that is, the vertical cross section of the pixel defining layer 2 along the width direction (the width direction refers to the direction of connecting two subpixel regions a adjacent to the pixel defining layer 2, as shown by arrow a in fig. 3) is an inverted trapezoid structure, and since the included angle between the inverted trapezoid structure and the anode layer is less than 90 degrees, there is a capillary phenomenon, so that the ink droplets are spread uniformly under the capillary action, however, with this structure, when depositing the cathode layer, especially when the thickness of the cathode layer is not enough to spread the opening formed by the pixel defining layer 2, the cathode layer is easily broken, thereby causing the short-circuit defect of the cathode layer, which requires evaporating a cathode layer several tens of times as thick to spread the opening formed by the pixel defining layer 2, and increases the manufacturing cost and time, and the transmittance of the device is reduced.
Accordingly, an embodiment of the present invention provides an array substrate, referring to fig. 4, including: a substrate 1, and a pixel defining layer 2 formed on the substrate 1, the pixel defining layer 2 dividing the substrate 1 into a plurality of sub-pixel regions a; the pixel defining layer 2 includes a first defining layer 21 and a second defining layer 22 stacked in this order from bottom to top, and the width D2 of the lower surface of the second defining layer 22 is greater than the width D1 of the upper surface of the first defining layer 21, so as to form an indented structure 23 relative to the second defining layer 22 on both sides of the first defining layer 21 in the width direction (the direction of the line connecting two subpixel regions a adjacent to the first defining layer 21, as shown by the arrow a in fig. 4).
The width D2 of the lower surface of the second defining layer 22 refers to the length of the lower surface of the second defining layer 22 in the connecting direction (the direction indicated by the arrow a in fig. 4) between two sub-pixel regions a adjacent to the second defining layer 22, and the width D1 of the upper surface of the first defining layer 21 refers to the length of the upper surface of the first defining layer 22 in the connecting direction (the direction indicated by the arrow a in fig. 4) between two sub-pixel regions a adjacent to the first defining layer 21. Since the width D2 of the lower surface of the second defining layer 22 is larger than the width D1 of the upper surface of the first defining layer 21, the indented structures 23 with respect to the second defining layer 22 can be formed on both sides of the first defining layer 21 in the width direction by indenting both sides of the upper surface of the first defining layer 21 in the width direction inward with respect to the edge of the lower surface of the second defining layer 22.
Here, a vertical cross section of the first delimiting layer 21 and the second delimiting layer 22 in the width direction may be a trapezoidal structure or an inverted trapezoidal structure, which is not particularly limited herein. As long as the width D2 of the lower surface of the second defining layer 22 is greater than the width D1 of the upper surface of the first defining layer 21, the setback structures 23 with respect to the second defining layer 22 may be formed on both sides of the width direction of the first defining layer 21.
In practical applications, when the first defining layer 21 and the second defining layer 22 are formed by a patterning process, if there is no particular requirement, the vertical cross section of the first defining layer 21 and the second defining layer 22 in the width direction, which is usually obtained according to an etching process, is a trapezoidal structure.
In the embodiment of the present invention, by forming the receding structures 23 on two sides of the first defining layer 21 in the width direction relative to the second defining layer 22, the ink droplets can be spread more uniformly by using the capillary action of the receding structures 23, so as to solve the problem of the coffee ring effect caused by the trapezoidal structure of the pixel defining layer and the problem of the cathode layer caused by the inverted trapezoidal structure in the related art.
Therefore, in view of the above, as shown in fig. 4, the vertical cross sections of the first defining layer 21 and the second defining layer 22 in the width direction are preferably both of a trapezoidal structure.
The embodiment of the invention provides an array substrate, because the pixel defining layer 2 comprises a first defining layer 21 and a second defining layer 22 which are sequentially stacked from bottom to top, and the width D2 of the lower surface of the second defining layer 22 is greater than the width D1 of the upper surface of the first defining layer 21, so as to form the retraction structures 23 relative to the second defining layer 22 on two sides of the first defining layer 21 along the width direction, when the light-emitting functional layer is formed by ink-jetting, due to the presence of the retraction structures 23, ink droplets can be more uniformly spread under the capillary action, and thus the coffee ring effect when the ink droplets are dried can be reduced.
The thicknesses of the first defining layer 21 and the second defining layer 22 can be set reasonably according to actual conditions.
For example, in practical applications, the thicknesses of the first defining layer 21 and the second defining layer 22 may be set according to the thickness of the light-emitting functional layer to be formed, so that when ink is jetted, ink droplets can be spread more uniformly under the capillary action of the indented structure 23, and problems such as ink overflow and cathode layer fault are prevented.
In one embodiment of the present invention, as shown in FIG. 4, the thickness H1 of the first defining layer 21 is 0.5-1.5 μm, and the thickness H2 of the second defining layer 22 is 0.5-1.0 μm. The thicknesses of the first defining layer 21 and the second defining layer 22 are limited in the above range, and when the light emitting function layer is formed in the subpixel region a, the thickness of the light emitting function layer is reasonably controlled, so that the light emitting function layer can be uniformly spread by using capillary action, short circuit caused by overflow of the light emitting function layer can be prevented, and when the second defining layer 22 is in an inverted trapezoidal structure, the problem of cathode layer fault caused by over thickness of the second defining layer 22 is easily caused.
In another embodiment of the present invention, as shown in fig. 5, a light emitting function layer 3 is disposed in the sub-pixel region a, and a difference between a thickness H3 of the light emitting function layer 3 and a thickness H1 of the first defining layer 21 is greater than or equal to 0 and less than or equal to 100 nm. It is possible to prevent the occurrence of short circuit due to an excessive thickness of the light-emitting functional layer 3 at the time of ink jet printing.
The material of the first defining layer 21 and the second defining layer 22 is not particularly limited, and the material of the first defining layer 21 and the material of the second defining layer 22 may be the same or different.
In one embodiment of the present invention, the first defining layer 21 is a silicon nitride film, and the second defining layer 22 is a silicon oxide film. Since silicon oxide has a larger etching selectivity than silicon nitride, the above first defining layer 21 and second defining layer 22 can be formed by the same patterning process.
It should be noted that, in the inkjet printing process, when the ink trajectory is shifted or when the ejected ink drop generates a comet point, the ink dropped on the top of the second defining layer 22 may remain on the top of the second defining layer 22, so that the amount of ink in the sub-pixel region defined by the pixel defining layer 2 is reduced, and further, the film thickness of the light-emitting functional layer in each sub-pixel region is not uniform, which affects the final display effect.
In view of this, in one embodiment of the present invention, the hydrophobic film 24 is formed on the upper surface of the second defining layer 22. Thus, when the ink drop track is deviated during ink jet printing, or when the ejected ink drop generates comet points and the like, the ink drop can flow back to the sub-pixel area under the hydrophobic effect of the hydrophobic film 24 and the capillary effect of the pixel defining layer 2 with the retraction structure 23 at the bottom, and the problem of uneven thickness generated by the deviation of the ink drop track or the generation of comet points due to ejection is prevented.
The specific material of the hydrophobic film 24 is not limited.
In one embodiment of the present invention, the hydrophobic film 24 is a fluorocarbon polymer film. The fluorocarbon polymer film is (CF)2)nThe polymer passivation film of (1). The film has strong electronegativity of fluorine element, small atom radius, low atom polarizability, large bond energy of carbon-fluorine bonds in the fluorocarbon polymer, spiral distribution of fluorine atoms along the carbon bonds, shielding effect, small intermolecular force and low surface energy, thus having good hydrophobicity.
Wherein the fluorocarbon polymer film may be formed by continuing to perform plasma treatment on the upper surface of the second defining layer 22 with fluorocarbon after forming the first defining layer and the second defining layer by etching. In the above example, since the first defining layer 21 is a silicon nitride film, the second defining layer 22 is a silicon oxide film. Silicon oxide reacts more readily with fluorocarbons than silicon nitride to form a fluorocarbon polymer film, which can form a fluorocarbon polymer film on the upper surface of the second defining layer 22, and thus acts as a hydrophobic layer.
In still another embodiment of the present invention, as shown in fig. 5, the array substrate further includes an anode layer 4 formed between the substrate 1 and the pixel defining layer 2, and a cathode layer 5 formed on the light emitting function layer 3 and the pixel defining layer 2, wherein the anode layer 4 includes an anode 41 disposed in each sub-pixel region a.
In the embodiment of the present invention, the anode layer 4, the cathode layer 5, and the light emitting functional layer 3 disposed therebetween form a self-light emitting device.
The self-light emitting device may be a top-light emitting device, or a double-sided light emitting device.
In an embodiment of the present invention, the anode layer 4 includes a reflective metal electrode layer and a transparent electrode layer sequentially stacked from bottom to top; the cathode layer 5 includes a metal electrode layer and a transparent electrode protection layer which are sequentially stacked from bottom to top.
In the embodiment of the present invention, by providing the anode layer 4 in a two-layer structure, on the one hand, by providing a transparent electrode layer having a high work function close to the light-emitting function layer 3, the potential barrier between the anode 41 and the hole transport layer can be reduced. On the other hand, due to the existence of the reflecting metal electrode layer, the self-luminous device can be a top-emitting device and can be designed with a micro-cavity structure. In addition, by arranging the electrode protection layer on the surface of the metal electrode layer, the metal electrode layer can be made of metal materials with low work function, such as one or more of lithium, calcium, aluminum, silver, magnesium and lithium fluoride.
The transparent electrode protection layer may be made of one or more of ITO (Indium tin oxide), IZO (Indium zinc oxide), zinc oxide, and Indium oxide.
In still another embodiment of the present invention, as shown in fig. 4 and 5, the array substrate may further include a TFT array 6 and a planarization layer 7 formed between the substrate 1 and the anode layer 4.
Further, the array substrate may further include an encapsulation film layer and a polarizer, etc. formed on the cathode layer 5.
An embodiment of the invention provides a display panel, which includes the array substrate as described above.
The beneficial effects of the display panel provided by the embodiment of the invention are the same as those of the array substrate provided by the technical scheme, and are not repeated herein.
An embodiment of the present invention provides a method for manufacturing an array substrate, referring to fig. 4, including:
a pixel defining layer 2 is formed on a substrate 1, and the pixel defining layer 2 divides the substrate into a plurality of sub-pixel regions A. The pixel defining layer 2 includes a first defining layer 21 and a second defining layer 22 stacked in sequence from bottom to top, and a width of a lower surface of the second defining layer 22 is greater than a width of an upper surface of the first defining layer 21, so as to form an indented structure 23 relative to the second defining layer 22 on both sides of the first defining layer 21 in a width direction.
On this basis, as shown in fig. 4, before the pixel defining layer 2 is formed on the substrate 1, the manufacturing method may further include sequentially forming a TFT (Thin Film Transistor) array 6, a planarization layer 7, an anode layer 4, and the like on the substrate 1.
The embodiment of the invention provides a preparation method of an array substrate, wherein the indented structures 23 relative to the second defining layer 22 are formed on two sides of the first defining layer 21 in the width direction, so that when a light-emitting functional layer is formed by ink jet, ink drops can be more uniformly spread under the capillary action due to the existence of the indented structures 23, and the coffee ring effect when the ink drops are dried can be reduced.
The materials of the first defining layer 21 and the second defining layer 22 may be the same or different, and are not limited herein. In the following embodiments, the first defining layer 21 is a silicon nitride film, and the second defining layer 22 is a silicon oxide film.
The method of manufacturing the array substrate will be described in detail below by specific examples.
First, as shown in fig. 6, after a gate electrode, a gate insulating layer, an active layer, and a source drain are sequentially formed on a substrate 1 to form a thin film transistor array 6 and a planarization layer 7, a layer of anode material is deposited and etched to form an anode 41 of each subpixel region a.
Then, as shown in fig. 7, a silicon nitride film 021 is deposited on the anode layer 4 by using a chemical vapor deposition method or a magnetron sputtering method, the thickness of the silicon nitride film may be 0.5 to 1.5 micrometers, a silicon oxide film 022 is deposited on the silicon nitride film 021 by using a chemical vapor deposition method or a magnetron sputtering method, the thickness may be 0.5 to 1.0 micrometers, and then the first defining layer 21 and the second defining layer 22 are formed by a single patterning process.
Of course, it is also possible to deposit a silicon nitride film 021 on the anode layer 4 by using a chemical vapor deposition method or a magnetron sputtering method, and first form the first defining layer 21 by a first patterning process; a silicon oxide film 022 is deposited on the substrate, and a second defining layer 22 is formed by a second patterning process.
When the first defining layer 21 and the second defining layer 22 are formed by the same patterning process, the specific steps are as follows:
first, after a silicon nitride film 021 and a silicon oxide film 022 are formed over a substrate 1, a photoresist 100 is applied over the silicon oxide film 022, and then exposure and development are performed to remove the photosensitive photoresist, thereby forming a structure as shown in fig. 8.
Then, the exposed silicon oxide film 022 is etched using fluorocarbon and oxygen as working gases, thereby forming a structure as shown in fig. 9. After the exposed silicon oxide film 022 is etched, the working gas is continuously used to etch the silicon nitride film 021, and the embodiments of the present invention utilize different etching selection ratios of different materials, so that the etching rates are different, and since the etching rate of the silicon nitride film 021 is much faster than that of the silicon oxide film 022 and a lateral etching phenomenon exists, under the same etching condition, the setback structures 23 relative to the second defining layer 22 can be formed on both sides of the first defining layer 21 along the width direction, so as to form the structure shown in fig. 10.
Next, the photoresist 100 on the second defining layer 22 may be removed by a plasma ashing process using oxygen as a working gas, resulting in the structure shown in fig. 11. At this time, the exposed surface of the second defining layer 22 may be continuously plasma-treated with fluorocarbon to form the hydrophobic film 24 on the upper surface of the second defining layer 22, resulting in the structure shown in fig. 4.
Specifically, the etching mechanism of silicon oxide film by fluorocarbon plasma mainly comprises three stages, namely a first stage, fluorocarbon (such as CF)4、C4F8、CHF3Etc.) are decomposed into ionic states in a plasma stateCF of2With an active F group, as in formula (I) below, wherein CF is in the ionic state2Polymerization reaction to form (CF)2)nThe macromolecule passivation film is formed on the surface of the silicon oxide, namely a fluorocarbon polymer film is formed, and the formula (II) is shown in the specification. Second stage, CF from fluorocarbon polymer filmxRadicals with SiO2Reaction to form SiFxCO2I.e. the process in which the growth of the fluorocarbon polymer film is inhibited. Third stage, SiFxCO2Decomposition to SiF under bombardment of F atoms or ionsxI.e. the process by which the silicon oxide is etched. In the embodiment of the present invention, the magnitude of the self-bias voltage or the etching time is controlled, and the etching process is controlled to be the first stage, that is, the fluorocarbon plasma is used to treat the exposed surface of the silicon oxide, and a layer of fluorocarbon polymer film is formed on the surface of the silicon oxide, so that the fluorocarbon polymer film can be formed on the upper surface of the second defining layer 22.
CF4→2F↑+CF2↑ (I)
nCF2↑→(CF2)n (II)
In this process, the exposed surface of the first defining layer 21 also forms a fluorocarbon polymer film, but relatively speaking, the film forming rate of silicon oxide is much greater than that of silicon nitride.
After the pixel defining layer 2 is formed, as shown in fig. 12, the method for manufacturing the array substrate may further include: the light-emitting functional layer 3 is printed by means of ink jet printing.
Because the two sides of the first defining layer 21 in the pixel defining layer 2 along the width direction are formed with the retraction structures 23 relative to the second defining layer 22, and because the upper surface of the second defining layer 22 is formed with the hydrophobic film 24, when the light-emitting functional layer 3 is printed in an ink-jet printing manner, under the hydrophobic effect of the hydrophobic film 24 and the capillary effect of the retraction structures 23, ink droplets of the light-emitting functional layer 3 can be uniformly spread in each sub-pixel region a, and the problem of uneven thickness caused by deviation of ink droplet tracks or generation of comet dots in the ink-jet printing process is prevented.
Among them, the light emitting functional layer 3 may include a light emitting layer. Illustratively, adjacent subpixel regions emit red, blue, and green light, respectively.
Further, the light emitting function layer 3 may further include a hole injection layer and an electron injection layer. Further, the light emitting function layer may further include a hole transport layer and an electron transport layer, and a hole blocking layer and an electron blocking layer, and the like.
After the light emitting functional layer 3 is formed by the inkjet printing technique, as shown in fig. 5, the method of manufacturing the array substrate may further include: the cathode layer 5 is formed by vapor deposition or magnetron sputtering. For a top emission device, the cathode layer 5 may be a metal layer with a low work function (e.g., one or a combination of lithium, calcium, aluminum, silver, magnesium, and lithium fluoride) and a transparent conductive layer made of one or a combination of ITO (Indium tin oxide), IZO (Indium zinc oxide), zinc oxide, and Indium oxide.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (9)
1. An array substrate, comprising:
a substrate, and a pixel defining layer formed on the substrate, the pixel defining layer dividing the substrate into a plurality of sub-pixel regions;
the pixel defining layer comprises a first defining layer and a second defining layer which are sequentially stacked from bottom to top, the width of the lower surface of the second defining layer is larger than that of the upper surface of the first defining layer, so that an indentation structure relative to the second defining layer is formed on two sides of the first defining layer along the width direction;
the thickness of the first defining layer is 0.5-1.5 microns, and the thickness of the second defining layer is 0.5-1.0 microns;
and a light-emitting functional layer is arranged in the sub-pixel region, and the difference between the thickness of the light-emitting functional layer and the thickness of the first defining layer is greater than or equal to 0 and less than or equal to 100 nanometers.
2. The array substrate of claim 1, wherein a hydrophobic film is formed on an upper surface of the second defining layer.
3. The array substrate of claim 2,
the hydrophobic film is a fluorocarbon polymer film.
4. The array substrate of claim 1,
the first defining layer is a silicon nitride film and the second defining layer is a silicon oxide film.
5. The array substrate of claim 1,
the array substrate further includes an anode layer formed between the substrate and the pixel defining layer, and a cathode layer formed on the light emitting function layer and the pixel defining layer, wherein the anode layer includes an anode disposed in each of the sub-pixel regions.
6. The array substrate of claim 5,
the anode layer comprises a reflective metal electrode layer and a transparent electrode layer which are sequentially stacked from bottom to top;
the cathode layer comprises a metal electrode layer and a transparent electrode protection layer which are sequentially stacked from bottom to top.
7. A display panel comprising the array substrate according to any one of claims 1 to 6.
8. A method for preparing the array substrate according to any one of claims 1 to 6, comprising:
forming a pixel defining layer on a substrate, the pixel defining layer dividing the substrate into a plurality of sub-pixel regions; the pixel defining layer comprises a first defining layer and a second defining layer which are sequentially stacked from bottom to top, the etching selection ratio of the first defining layer is greater than that of the second defining layer, and the first defining layer and the second defining layer are formed through the same composition process;
wherein the width of the lower surface of the second defining layer is larger than that of the upper surface of the first defining layer, so as to form an indentation structure relative to the second defining layer on two sides of the first defining layer along the width direction; and the thickness of the first defining layer is 0.5-1.5 microns, and the thickness of the second defining layer is 0.5-1.0 microns;
and forming a light-emitting function layer in the sub-pixel region, wherein the difference between the thickness of the light-emitting function layer and the thickness of the first defining layer is greater than or equal to 0 and less than or equal to 100 nanometers.
9. The method of claim 8, wherein the step of forming the array substrate comprises the steps of,
further comprising: and carrying out plasma treatment on the exposed surface of the second defining layer by using fluorocarbon so as to form a hydrophobic film on the upper surface of the second defining layer.
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| CN110581225B (en) * | 2019-08-22 | 2021-09-07 | 湖畔光电科技（江苏）有限公司 | OLED structure and manufacturing method thereof |
| CN110634924B (en) * | 2019-09-25 | 2022-06-21 | 合肥京东方卓印科技有限公司 | Display backboard and display device |
| CN110649185B (en) * | 2019-09-26 | 2022-08-09 | 合肥京东方卓印科技有限公司 | Display substrate, ink-jet printing method thereof and display device |
| CN111137013B (en) * | 2020-01-09 | 2020-12-25 | 深圳市华星光电半导体显示技术有限公司 | Inkjet printing method, inkjet printing apparatus, inkjet printing device, and computer-readable storage medium |
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