CN109825803A - Environment-friendly semiconductor material Mg2The preparation method of Ge film - Google Patents
Environment-friendly semiconductor material Mg2The preparation method of Ge film Download PDFInfo
- Publication number
- CN109825803A CN109825803A CN201910165040.4A CN201910165040A CN109825803A CN 109825803 A CN109825803 A CN 109825803A CN 201910165040 A CN201910165040 A CN 201910165040A CN 109825803 A CN109825803 A CN 109825803A
- Authority
- CN
- China
- Prior art keywords
- film
- piece
- annealing
- environment
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The invention discloses a kind of environment-friendly semiconductor material Mg2The preparation method of Ge film.The present invention is put into material is evaporated in resistance heating body appropriate, and energization makes evaporation material directly heat evaporation, so that depositing to evaporation material in a gaseous form forms film on substrate.The present invention uses resistance-type evaporation technique deposition 400nm or so pure metal Mg film on Ge monocrystal chip first, forms Ge/Mg membrane structure, is subsequently placed in vacuum annealing furnace and anneals, obtains better quality Mg2Ge semiconductive thin film.The advantages of present invention has lower production costs, is able to carry out industrialized production.
Description
Technical field
The invention belongs to technical field of semiconductors, especially environment-friendly semiconductor material Mg2The preparation method of Ge film.
Background technique
Mg2Ge as a kind of metal silicide environment-friendly semiconductor material for possessing good development prospect, have with
Lower feature: the raw material resources of alloying element Mg, Ge are abundant, earth's crust reserves are big, cheap；Element is nontoxic and pollution-free, Mg2Ge
It is corrosion-resistant, anti-oxidant；Mg2Ge is a kind of indirect bandgap material, the band gap width with 0.67ev.Mg2Ge can be in Ge
Preferable epitaxial growth on substrate reduces production equipment upgrading bring cost pressure with traditional Ge process compatible.In photoelectricity
And in terms of pyroelectricity Quality Research, as a kind of narrow bandgap semiconductor material, Mg2Ge has certain answer in field of infrared sensors
It with prospect, is analyzed by adulterating different elements, it was demonstrated that Mg2Ge has good thermoelectric material application prospect.At present
Through there are many technologies to be applied to Mg2The preparation of Ge thin-film material, including: pulse laser deposits, and vapor deposition, magnetic control splashes
It penetrates, these methods have experiment condition harshness, higher cost, it is difficult to the disadvantages of industrialization promotion.
Summary of the invention
The object of the present invention is to provide a kind of environment-friendly semiconductor material Mg2The preparation method of Ge film, it tests item
Part is simple, and cost is relatively low, is conducive to industrialization promotion.
The present invention is implemented as follows: environment-friendly semiconductor material Mg2The preparation method of Ge film, including walk as follows
It is rapid:
1) Ge piece is washed and dried；
2) the Ge piece after cleaning is fixed on the specimen holder above deposited chamber, Mg particle is placed in evaporation boat；
3) Ge piece is deposited；
4) it will be cooled down after Ge piece vapor deposition, then Ge piece after cooling taking-up be placed in high vacuum annealing furnace in low vacuum
It anneals in atmosphere, forms a kind of environment-friendly semiconductor Mg2Ge polycrystal film.
The concrete operations that Ge piece washes and dries are by the step 1): carrying out carry out using acetone ultrasonic oscillation
Primary cleaning；It cleans for the first time and then carries out second using dehydrated alcohol ultrasonic oscillation and clean；Second of cleaning is completed
And then third time cleaning is carried out using deionized water ultrasonic oscillation；The sample cleaned up is placed under the conditions of 80 DEG C
Baking, until surface is completely dried.
The vacuum degree of deposited chamber when Ge piece is deposited is less than or equal to 1.0 × 10-3When Pa, evaporation current 90A,
The power of resistance-type thermal evaporation when vapor deposition is 16~19KW, and evaporation rate is maintained at 18-25nm/min or so, and evaporation time is
18-25min。
It will cool down, refer to the Ge piece cooled to room temperature after vapor deposition after Ge piece vapor deposition described in step 4).
The annealing conditions of step 4) are that annealing furnace back end vacuum is less than or equal to 10-3Pa adjusts angle valve before annealing, makes to move back
Stove cavity is maintained at low vacuum 10-1Pa-10-2Pa, annealing time 3-7 hours, 350 DEG C of annealing temperature, annealing time 3-7 was small
When, 350 DEG C of annealing temperature.
The principle of the present invention is: evaporation material being put into resistance heating body appropriate, energization adds evaporation material directly
Thermal evaporation, so that depositing to evaporation material in a gaseous form forms film on substrate.The present invention uses resistance-type to evaporate first
Technology deposits 400nm or so pure metal Mg film on Ge monocrystal chip, forms Ge/Mg membrane structure, is subsequently placed at vacuum annealing
It anneals in furnace.Annealing furnace back end vacuum is less than or equal to 10-3Pa adjusts angle valve before annealing, back end vacuum is made to be maintained at 10-1Pa-10-2Between Pa, and close.In entire annealing process, annealing furnace cavity is maintained at low vacuum 10-1Pa-10-2Between Pa.Annealing time
3-7 hours, 350 DEG C of annealing temperature, obtain better quality Mg2Ge semiconductive thin film.The present invention has lower production costs, can
The advantages of carrying out industrialized production.
Detailed description of the invention
Fig. 1 is sample X-ray diffractogram of the invention, i.e., in the X-ray diffraction that 350 DEG C of annealing times are respectively 3~7h
Figure；
Fig. 2 is Sample Scan electron microscope of the invention, i.e., in the scanning electron microscope (SEM) photograph that 350 DEG C of annealing times are respectively 3~7h.
Specific embodiment
The present invention is further described by the following examples, but embodiment is not delimit the scope of the invention.
Embodiment 1: environment-friendly semiconductor material Mg2The preparation method of Ge film, includes the following steps:
1) it carries out carrying out first time cleaning using acetone ultrasonic oscillation；Clean and then use for the first time dehydrated alcohol
Ultrasonic oscillation carries out second and cleans；Second of cleaning is completed and then carries out third using deionized water ultrasonic oscillation
Secondary cleaning；Remove germanium wafer surface organic matter.Finally the sample cleaned up is placed in drying box under the conditions of 80 DEG C and is toasted, until table
Until face is completely dried
2) the Ge piece after cleaning is fixed on the specimen holder above deposited chamber, Mg particle is placed in evaporation boat；
3) deposited chamber is vacuumized, when vacuum degree is less than or equal to 1.0 × 10-3When Pa, is kept for a period of time, then carry out Ge
The vapor deposition of piece；Start to be deposited；Evaporation current is gradually added to 80A, formally starts to be deposited；The power of resistance-type thermal evaporation when vapor deposition
For 16~19KW, evaporation rate is maintained at 20nm/min or so, and evaporation time is 20min or so；
4) by cooled to room temperature after Ge piece vapor deposition, then Ge piece after cooling is taken out and is placed in high vacuum annealing furnace
It anneals in low vacuum atmosphere, forms a kind of environment-friendly semiconductor Mg2Ge polycrystal film；Annealing furnace back end vacuum is less than or equal to
10-3Pa adjusts angle valve before annealing, and annealing furnace cavity is made to be maintained at low vacuum 10-1Pa-10-2Pa annealing time 3-7 hours, is moved back
350 DEG C of fiery temperature, annealing time 3-7 hours, 350 DEG C of annealing temperature.
The vapor deposition of table 1, annealing conditions:
Fig. 1 is the X-ray diffractogram of the sample of 350 DEG C of different annealing times preparations, as it can be seen that removing substrate Ge diffraction maximum in figure
Outside, each diffraction maximum is Mg2Ge diffraction maximum, and corresponded with PDF standard spectrum (card number: 86-1028) diffraction maximum, illustrate this
It invents under the preparation condition, is prepared for the good Mg of crystalline condition2Ge film.
Fig. 2 is the scanning electron microscope (SEM) photograph of the sample surface morphology of 350 DEG C of different annealing time preparations, as the result is shown Mg2Ge is brilliant
Grain is good to sample surfaces coverage, and crystallite dimension is larger, and surface is more smooth.Under the annealing conditions used by testing, have
The good Mg of crystalline state2Ge film occurs.
Claims (5)
1. a kind of environment-friendly semiconductor material Mg2The preparation method of Ge film, which comprises the steps of:
1) Ge piece is washed and dried；
2) the Ge piece after cleaning is fixed on the specimen holder above deposited chamber, Mg particle is placed in evaporation boat；
3) Ge piece is deposited；
4) it will be cooled down after Ge piece vapor deposition, then Ge piece after cooling taking-up be placed in high vacuum annealing furnace in low vacuum atmosphere
Middle annealing forms a kind of environment-friendly semiconductor Mg2Ge polycrystal film.
2. environment-friendly semiconductor material Mg according to claim 12The preparation method of Ge film, it is characterised in that: described
Step 1) be by the concrete operations that Ge piece washes and dries: carry out first time cleaning using acetone ultrasonic oscillation, the
It is primary to clean and then clean for the second time using dehydrated alcohol ultrasonic oscillation；Second of cleaning is completed and then is used
Deionized water ultrasonic oscillation carries out third time cleaning；The sample cleaned up is placed under the conditions of 80 DEG C and is toasted, until surface
It is completely dried.
3. environment-friendly semiconductor material Mg according to claim 12The preparation method of Ge film, it is characterised in that: to Ge
The vacuum degree of deposited chamber when piece is deposited is less than or equal to 1.0 × 10-3When Pa, evaporation current 90A, resistance when vapor deposition
The power of formula thermal evaporation is 16~19KW, and evaporation rate is maintained at 18-25nm/min or so, evaporation time 18-25min.
4. environment-friendly semiconductor material Mg according to claim 12The preparation method of Ge film, it is characterised in that: step
4) will cool down after Ge piece vapor deposition described in, refers to the Ge piece cooled to room temperature after vapor deposition.
5. environment-friendly semiconductor material Mg according to claim 12The preparation method of Ge film, it is characterised in that: step
4) annealing conditions are that annealing furnace back end vacuum is less than or equal to 10-3Pa adjusts angle valve before annealing, and is maintained at annealing furnace cavity
Low vacuum 10-1Pa-10-2Pa, annealing time 3-7 hours, 350 DEG C of annealing temperature, annealing time 3-7 hours, annealing temperature 350
℃。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910165040.4A CN109825803A (en) | 2019-03-05 | 2019-03-05 | Environment-friendly semiconductor material Mg2The preparation method of Ge film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910165040.4A CN109825803A (en) | 2019-03-05 | 2019-03-05 | Environment-friendly semiconductor material Mg2The preparation method of Ge film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109825803A true CN109825803A (en) | 2019-05-31 |
Family
ID=66865324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910165040.4A Pending CN109825803A (en) | 2019-03-05 | 2019-03-05 | Environment-friendly semiconductor material Mg2The preparation method of Ge film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109825803A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102925866A (en) * | 2012-11-14 | 2013-02-13 | 贵州大学 | Preparation technology for single-phase Mg2Si semiconductor film |
-
2019
- 2019-03-05 CN CN201910165040.4A patent/CN109825803A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102925866A (en) * | 2012-11-14 | 2013-02-13 | 贵州大学 | Preparation technology for single-phase Mg2Si semiconductor film |
Non-Patent Citations (1)
| Title |
|---|
| 常少梅: "基于第一性原理的Mg2Sn和Mg2Ge半导体热力学性质研究", 《宝鸡文理学院学报（自然科学版）》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107785241B (en) | A method of preparing beta-gallium oxide film on a silicon substrate | |
| US8501524B2 (en) | Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same | |
| CN110335809B (en) | Method for growing single crystal gamma-phase indium selenide film on mica substrate | |
| Yuan et al. | Sb 2 Se 3 solar cells prepared with selenized dc-sputtered metallic precursors | |
| CN107881472A (en) | A kind of CsPbI3The preparation method of film | |
| CN101798680B (en) | Magnetron sputtering preparation process for Mg2Si thin film made of environment-friendly semiconductor material | |
| CN101339906A (en) | Preparation process of novel environmental semi-conductor photoelectronic material beta-FeSi2 film | |
| CN111020487B (en) | Method for preparing film of quasi-one-dimensional structure material with controllable orientation | |
| CN101423927B (en) | Method for preparing AlxIn1-xN film | |
| CN102251215B (en) | Method for preparing AlInN film by double buffer layer technique | |
| CN102925866B (en) | Preparation technology for single-phase Mg2Si semiconductor film | |
| CN104195514B (en) | Preparation method for zinc tin nitride polycrystalline film | |
| CN110629184A (en) | Method for directly growing two-dimensional hexagonal boron nitride on dielectric substrate | |
| CN109825803A (en) | Environment-friendly semiconductor material Mg2The preparation method of Ge film | |
| CN105648535B (en) | A kind of device for preparing chalcogenide compound heterojunction structure and preparation method thereof | |
| CN108330536B (en) | Preparation method of PA-MBE homoepitaxy high-quality GaN monocrystal film | |
| CN104790029B (en) | A kind of method for preparing SnO epitaxial films | |
| CN103741220A (en) | Method for growing high-quality gallium nitride (GaN) crystals by using graphene or graphene oxide | |
| CN101831693A (en) | Method for growing zinc oxide film material | |
| CN105483617A (en) | Method for preparing Mg2Si film on non-silicon substrate | |
| CN101798674A (en) | Process for preparing environment-friendly semiconductor material Mg2Si film by electron beam evaporation method | |
| CN111933514B (en) | Method for preparing Ir (111) composite substrate for epitaxial single crystal diamond by electron beam evaporation process | |
| CN106653569A (en) | Preparation method of semiconductor material beta-SiC film | |
| US20200312659A1 (en) | Method for the preparation of gallium oxide/copper gallium oxide heterojunction | |
| CN109943884A (en) | A kind of zinc selenide raw material high temperature purification method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190531 |