CN109802026A - A kind of electrooptical switching or optical attenuator and forming method thereof containing isolation channel - Google Patents
A kind of electrooptical switching or optical attenuator and forming method thereof containing isolation channel Download PDFInfo
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- CN109802026A CN109802026A CN201711137912.3A CN201711137912A CN109802026A CN 109802026 A CN109802026 A CN 109802026A CN 201711137912 A CN201711137912 A CN 201711137912A CN 109802026 A CN109802026 A CN 109802026A
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- isolation channel
- optical attenuator
- electrooptical switching
- waveguiding structure
- isolation
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Abstract
The present invention relates to a kind of electrooptical switching or optical attenuator containing isolation channel comprising SOI substrate and MZI structure away from the first distance and are separately positioned on the first and second isolation channels of first wave guide arm left and right side with first wave guide arm；Away from the second distance and the third and fourth isolation channel of second waveguide arm left and right side is separately positioned on second waveguide arm；Wherein second is completely overlapped with third isolation channel；Wherein first distance is equal to second distance；And wherein first, second, third and fourth isolation channel at least extends to the interface that top silicon layer is contacted with oxide skin(coating).The present invention also provides the methods for forming above-mentioned electrooptical switching or optical attenuator containing isolation channel.The beneficial effects of the present invention are improve device entirety extinction ratio and reduce device entirety Polarization Dependent Loss.
Description
Technical field
The present invention relates to integrated optoelectronic device technical fields.In particular it relates to it is a kind of have High Extinction Ratio and
Low polarization correlated electrooptical switching or optical attenuator and forming method thereof containing isolation channel.
Background technique
It is constituted using Mach-Ze Ende interferometer (Mach-Zehnder Interferometer, abbreviation MZI) structure
Optical waveguide switch is a kind of common technology.MZI structure generally includes parallel and identical two waveguide arms of height.By right
A wherein waveguide arm for MZI structure, that is, first wave guide arm carries out phase-modulation, and two waveguide arms is made to generate phase difference, thus real
The function of existing electrooptical switching or optical attenuation.
It, can be in wave because manufacturing process is related to pyroprocess in traditional MZI type electrooptical switching or optical attenuator structure
Stress is introduced in guide arm.In addition, the waveguide arm of energization can generate heat in electrooptical switching or optical attenuator are powered on, thus draw
Enter stress.Under the comprehensive function of these factors, two waveguide arms of MZI structure are under different ambient stresses, Jin Erzeng
Added MZI type electrooptical switching or optical attenuator on the whole Polarization Dependent Loss (Polarization Dependent Loss,
Abbreviation PDL).
For this purpose, a kind of with High Extinction Ratio and low polarization correlated electrooptical switching or light decay there is an urgent need in the art to develop
Subtract device and forming method thereof.
Summary of the invention
The purpose of the present invention is to provide a kind of electrooptical switching or optical attenuator containing isolation channel, to solve above-mentioned existing
Technical problem present in technology.The present invention is by the active zone position in MZI type electrooptical switching or optical attenuator, respectively two
The two sides of waveguide arm increase isolation channel apart from same position, to guarantee that two waveguide arm local environments are identical, effectively buffer
Influence of the stress to waveguide arm, and finally improve the extinction ratio of device entirety and reduce the Polarization Dependent Loss of device entirety.
The object of the invention is also to provide a kind of methods for forming electrooptical switching or optical attenuator containing isolation channel.
To achieve the goals above, the present invention provides following technical proposals.
In the first aspect, the present invention provides a kind of electrooptical switching or optical attenuator containing isolation channel, can include: SOI
Substrate, the SOI substrate successively include top silicon layer, oxide skin(coating) and body silicon layer from top to bottom；It is formed in the SOI substrate
MZI structure, the MZI structure include parallel and highly identical first wave guide arm and second waveguide arm；With first wave guide arm phase
Away from first distance and it is separately positioned on the first isolation channel and the second isolation channel of first wave guide arm left and right side；With second waveguide
Arm away from the second distance and is separately positioned on the third isolation channel and the 4th isolation channel of second waveguide arm left and right side；Wherein
Two isolation channels and third isolation channel are completely overlapped；Wherein first distance is equal to second distance；And wherein first isolation channel,
Second isolation channel, third isolation channel and the 4th isolation channel at least extend to the interface that top silicon layer is contacted with oxide skin(coating).
In a kind of embodiment of first aspect, the electrooptical switching or optical attenuator containing isolation channel, which may also include, to be set
It sets and groove location identical is isolated with the first isolation channel, the second isolation channel, third isolation channel and the 4th on soi substrates and respectively
One non-waveguiding structure, the second non-waveguiding structure, the non-waveguiding structure of third and the 4th non-waveguiding structure, wherein each isolation channel will correspond to
Non- waveguiding structure be separated into symmetrical two parts.
In the another embodiment of first aspect, the height of the non-waveguiding structure can with the first wave guide arm or
The height of second waveguide arm is identical.
In the another embodiment of first aspect, the height of the non-waveguiding structure can with the first wave guide arm or
The height of second waveguide arm is different.
In the another embodiment of first aspect, the non-waveguiding structure can be fabricated from a silicon.
In the another embodiment of first aspect, the oxide skin(coating) of the SOI substrate can be silicon dioxide layer.
In the another embodiment of first aspect, first isolation channel, the second isolation channel, third isolation channel and
Four isolation channels are not filled.
In second aspect, the present invention provides a kind of electrooptical switching or light containing isolation channel formed as described in relation to the first aspect
The method of attenuator, the method may include having passivation layer to surface and under setting MZI structure on soi substrates successively implemented
It states procedure of processing: (1) depositing photoresist on the passivation layer；(2) the etch areas window for needing to form isolation channel is opened；With
And (3) etch the passivation layer, and groove depth is isolated needed for reaching.
In a kind of embodiment of second aspect, the method may include having passivation layer to surface and being arranged to serve as a contrast in SOI
MZI structure and non-waveguiding structure on bottom successively implement following procedure of processings: (1) depositing photoresist on the passivation layer；(2)
Open the etch areas window for needing to form isolation channel；And (3) etch the passivation layer and the non-waveguiding structure, Zhi Daoda
To required isolation groove depth.
In the another embodiment of second aspect, performed etching in step (3) using dry etching.
Compared with prior art, the beneficial effects of the present invention are: (1) in two waveguide arms of traditional MZI type structure
Isolation channel is introduced, so that ambient enviroment locating for two waveguide arms is identical, this improves the extinction ratio of device entirety and reduces device
Whole Polarization Dependent Loss；And (2) manufacturing process is simple, can be manufactured using existing common process processing procedure and equipment,
With wide prospects for commercial application.
Detailed description of the invention
Fig. 1 schematically shows the active area structure of electrooptical switching according to prior art or optical attenuator.
Fig. 2 schematically shows a kind of electrooptical switching of embodiment according to the present invention or the active area knot of optical attenuator
Structure.
Fig. 3 schematically shows the electrooptical switching of another embodiment according to the present invention or the active area knot of optical attenuator
Structure.
Each appended drawing reference meaning in attached drawing is as follows:
10:SOI substrate
101: body silicon layer
102: oxide skin(coating)
103: top silicon layer
201: first wave guide arm
202: second waveguide arm
30: passivation layer
401: the first isolation channels
402: the second isolation channels
403: third isolation channel
404: the four isolation channels
501: the first non-waveguiding structures
502: the second non-waveguiding structures
503: the non-waveguiding structure of third
504: the four non-waveguiding structures.
Specific embodiment
Below in conjunction with attached drawing and the embodiment of the present invention, clear and complete retouch is carried out to technical solution of the present invention
It states.The size of attached drawing and actual size are disproportionate, in order to clearly illustrate certain features, may exaggerate the ruler of certain components
It is very little.
Term definition
In the present invention, term " SOI substrate " refers to silicon-on-insulator (Silicon-on-Insulator) substrate.The SOI
Substrate successively includes top silicon layer, oxide skin(coating) and body silicon layer from top to bottom.
In the present invention, term " oxide skin(coating) " refers to the insulator oxide nitride layer in SOI substrate.The oxide skin(coating) may include
Silica etc..
In the present invention, term " passivation layer " refer to be deposited on the insulating layer to shield around waveguide arm, oxide layer or
Passivation layer.In order to be distinguished with the oxide skin(coating) in SOI substrate, in the present invention, in the oxide layer for being related to waveguide surface
In the case of, it is unified to be indicated with passivation layer.
In the present invention, term " Polarization Dependent Loss " refers to light device maximum transmitted and most brief biography under all polarization states
Defeated ratio.
The active area of traditional MZI type electrooptical switching or optical attenuator structure is as shown in Figure 1.It is processed in the top silicon layer of SOI
Waveguiding structure.BOX layer is oxide skin(coating), and material is silica.This active area structure is since the influence of technological level is (in technique
Stress is introduced in process) or influence (introduce thermal stress) when device power-up work so that the NOL ring of two waveguide arms
Border is different, to affect polarization correlated (PDL) of device entirety.
Referring to Fig. 1, in the active area of traditional MZI type electrooptical switching or optical attenuator, in the top silicon layer of SOI substrate 10
Waveguide arm (201,202) are formed on 103.In one case, waveguide arm is formed by direct etching top silicon layer 103.Another
In a kind of situation, one layer of additional silicon layer (not shown) can be formed on the silicon layer of top by epitaxy first, then passed through in the same time
The additional silicon layer and top silicon layer are lost to form waveguide arm.Because the manufacturing process of waveguide arm is related to pyroprocess, and waveguide arm is logical
Occur fuel factor when electric, so that first wave guide arm 201 and the difference of ambient stress locating for second waveguide arm 202, to increase
The Polarization Dependent Loss of device entirety.
The purpose of the present invention is to provide a kind of electrooptical switching or optical attenuator containing isolation channel, to solve above-mentioned existing
Technical problem present in technology.Specifically, the present invention passes through in the active position of MZI type electrooptical switching or optical attenuator
It sets, respectively in the two sides of two waveguide arms, increases isolation channel apart from same position, to guarantee two waveguide arm local environment phases
Together, effectively influence of the buffering stress to waveguide arm, and finally improve the extinction ratio of device entirety and reduce the inclined of device entirety
Shake dependent loss.
Referring now to Figure 2, Fig. 2 schematically shows the electrooptical switching or optical attenuator of a kind of embodiment according to the present invention
Active area structure.It is different from the structure of active area of tradition MZI type electrooptical switching shown in FIG. 1 or optical attenuator structure, Fig. 2
Shown in active area further include away from the first distance and being separately positioned on first wave guide arm left and right side with first wave guide arm 201
The first isolation channel 401 and the second isolation channel 402；Away from the second distance and the second wave is separately positioned on second waveguide arm 202
The third isolation channel 403 and the 4th isolation channel 404 of guide arm left and right side；Wherein the second isolation channel and third isolation channel are completely heavy
It is folded；Wherein first distance is equal to second distance；And wherein first isolation channel, the second isolation channel, third isolation channel and
Four isolation channels extend to the interface that the top silicon layer 103 of SOI substrate 10 is contacted with oxide skin(coating) 102.The isolation channel (401,
It 402,403 and 404) is not filled.In active area structure of the invention, first wave guide arm 201 and second waveguide arm
202 ambient enviroments are identical, influence of the stress to waveguide arm can be effectively buffered, to significantly reduce Polarization Dependent Loss.
It will be understood by those skilled in the art that distance described in the present embodiment refers in the center line and isolation channel of waveguide
The distance between heart line.First distance is arranged to it is equal with second distance, exactly in order to form bilateral symmetry, so that
One waveguide arm 201 is identical with ambient stress locating for second waveguide arm 202.
Those skilled in the art are further appreciated that the second isolation channel 402 and third isolation channel 403 because in the present embodiment
It is completely overlapped, so in this specification, the two terms and corresponding appended drawing reference are used interchangeably.Art technology
Personnel can also be based on the purpose for forming symmetrical structure, the quantity of waveguide arm needed for increasing according to the actual situation.These variations should be recognized
For all within the spirit and scope of the present invention.
In the present invention, device to improve the extinction ratio of device entirety and is reduced by the depth that control isolation channel extends
Whole Polarization Dependent Loss.When the depth that isolation channel extends does not have complete penetration top silicon layer 103, this structure cannot be effective
It improves the extinction ratio of device entirety and reduces the Polarization Dependent Loss of device entirety.Therefore, in embodiments of the present invention,
Isolation channel at least extends to the interface that the top silicon layer 103 of SOI substrate 10 is contacted with oxide skin(coating) 102.
Although showing that isolation channel extends to the boundary that the top silicon layer 103 of SOI substrate 10 is contacted with oxide skin(coating) 102 in Fig. 2
At face, but in another embodiment, isolation channel may extend at least part of oxide skin(coating) 102.
Structure shown in Fig. 2 can be by successively real to the MZI structure that there is passivation layer 30 on surface and is arranged in SOI substrate 10
Following procedure of processings are applied to be formed: (1) depositing photoresist (not shown) on the passivation layer 30；(2) open need to form every
Etch areas window from slot；And (3) etch the passivation layer 30, and groove depth is isolated needed for reaching.In a kind of implementation
In mode, plasma etching is etching through to carry out in step (3).Plasma etching is a kind of dry etching of maturation
Technique, it is easy to implement.
Referring now to Figure 3, Fig. 3 schematically shows the electrooptical switching or optical attenuation of another embodiment according to the present invention
The active area structure of device.The difference of Fig. 3 and Fig. 2 is, further include be arranged in SOI substrate 10 and respectively with the first isolation channel
401, the second isolation channel 402, the identical first non-waveguiding structure 501 of third isolation channel 403 and 404 position of the 4th isolation channel,
The non-waveguiding structure 503 of two non-waveguiding structures 502, third and the 4th non-waveguiding structure 504.First isolation channel 401, the second isolation channel
402, third isolation channel 403 and the 4th isolation channel 404 correspondingly by the first non-waveguiding structure 501, the second non-waveguiding structure 502,
The non-waveguiding structure 503 of third and the 4th non-waveguiding structure 504 are separated into symmetrical two parts.The isolation channel (401,
It 402,403 and 404) is not filled.
In one embodiment, non-waveguiding structure 50 can be formed by silicon.It is similar with the formation of waveguide arm described above, it is non-
Waveguiding structure 50 can be formed by direct etching top silicon layer 103, can also form one layer on the silicon layer of top by epitaxy first
Then additional silicon layer (not shown) forms non-waveguiding structure by etching the additional silicon layer and top silicon layer simultaneously.
Those skilled in the art are further appreciated that the second non-waveguiding structure 502 and the non-wave of third because in the present embodiment
Guide structure 503 is completely overlapped, so in this specification, the two terms and corresponding appended drawing reference are used interchangeably.
Those skilled in the art can also be based on the purpose for forming symmetrical structure, the number of non-waveguiding structure needed for increasing according to the actual situation
Amount.These variations are considered as all within the spirit and scope of the present invention.
Similarly, although showing that isolation channel extends to the top silicon layer 103 of SOI substrate 10 and oxide skin(coating) 102 connects in Fig. 3
The interface of touching, but in another embodiment, isolation channel may extend at least part in oxide skin(coating) 102.
Although in addition, showing that the height of non-waveguiding structure is higher than first wave guide arm 201 and second waveguide arm 202 in Fig. 3
Height, it will be appreciated by a person skilled in the art that in one embodiment, the height of non-waveguiding structure can be lower than first wave
The height of guide arm 201 and second waveguide arm 202.In other embodiments, the height of non-waveguiding structure can be equal to first wave guide
The height of arm 201 and second waveguide arm 202.
Compared with embodiment shown in Fig. 2, the present embodiment is respectively set corresponding at position identical to each isolation channel
Non- waveguiding structure, and corresponding non-waveguiding structure is separated into symmetrical part by each isolation channel.This not only makes first wave
Guide arm 201 is identical with 201 local environment of second waveguide arm, and avoids when etching isolation channel in first wave guide arm 201 and
Any stress difference introduced between two waveguide arms 201, to further decrease the whole Polarization Dependent Loss of device.
Structure shown in Fig. 3 can be by the MZI structure and Fei Bo that there is passivation layer 30 on surface and is arranged in SOI substrate 10
Guide structure implements following procedure of processings successively to be formed: (1) photoresist (not shown) is deposited on the passivation layer 30；(2) it beats
Open the etch areas window for needing to form isolation channel；And (3) etch the passivation layer and non-waveguiding structure, needed for reaching
Groove depth is isolated.In one embodiment, plasma etching is etching through to carry out in step (3).Plasma is carved
Erosion is a kind of dry method etch technology of maturation, easy to implement.
The above-mentioned description to embodiment is that this hair can be understood and applied for the ease of those skilled in the art
It is bright.Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein
General Principle is applied in other embodiments without paying creative labor.Therefore, the present invention is not limited to implementations here
Example, those skilled in the art's disclosure according to the present invention, makes without departing from the scope and spirit of the present invention
It improves and modifies within all the scope of the present invention.
Claims (10)
1. a kind of electrooptical switching or optical attenuator containing isolation channel comprising:
SOI substrate, the SOI substrate successively include top silicon layer, oxide skin(coating) and body silicon layer from top to bottom；
The MZI structure formed in the SOI substrate, the MZI structure include parallel and the identical first wave guide arm of height and
Second waveguide arm；
Away from the first distance and the first isolation channel and of first wave guide arm left and right side is separately positioned on first wave guide arm
Two isolation channels；
Away from the second distance and the third isolation channel and of second waveguide arm left and right side is separately positioned on second waveguide arm
Four isolation channels；
Wherein the second isolation channel and third isolation channel are completely overlapped；
Wherein first distance is equal to second distance；And
Wherein first isolation channel, the second isolation channel, third isolation channel and the 4th isolation channel at least extend to top silicon layer and oxygen
The interface of compound layer contact.
2. electrooptical switching or optical attenuator containing isolation channel as described in claim 1, which is characterized in that further include that setting exists
It is identical first non-that groove location is isolated in SOI substrate and respectively with the first isolation channel, the second isolation channel, third isolation channel and the 4th
Waveguiding structure, the second non-waveguiding structure, the non-waveguiding structure of third and the 4th non-waveguiding structure, wherein each isolation channel will be corresponding non-
Waveguiding structure is separated into symmetrical two parts.
3. electrooptical switching or optical attenuator containing isolation channel as claimed in claim 2, which is characterized in that the non-waveguiding structure
Height it is identical as the height of the first wave guide arm or second waveguide arm.
4. electrooptical switching or optical attenuator containing isolation channel as claimed in claim 2, which is characterized in that the non-waveguiding structure
Height it is different from the height of the first wave guide arm or second waveguide arm.
5. electrooptical switching or optical attenuator containing isolation channel as claimed in claim 2, which is characterized in that the non-waveguiding structure
It is fabricated from a silicon.
6. electrooptical switching or optical attenuator containing isolation channel as claimed in claim 1 or 2, which is characterized in that the SOI substrate
Oxide skin(coating) be silicon dioxide layer.
7. electrooptical switching or optical attenuator containing isolation channel as claimed in claim 1 or 2, which is characterized in that described first every
It is not filled from slot, the second isolation channel, third isolation channel and the 4th isolation channel.
8. a kind of method for forming the electrooptical switching containing isolation channel or optical attenuator as described in claim 1, the method packet
Including has passivation layer to surface and setting MZI structure on soi substrates successively implements following procedure of processings:
(1) photoresist is deposited on the passivation layer；
(2) the etch areas window for needing to form isolation channel is opened；And
(3) passivation layer is etched, groove depth is isolated needed for reaching.
9. a kind of method for forming the electrooptical switching containing isolation channel or optical attenuator as claimed in claim 2, the method packet
Including has passivation layer to surface and setting MZI structure on soi substrates and non-waveguiding structure successively implement following procedure of processings:
(1) photoresist is deposited on the passivation layer；
(2) the etch areas window for needing to form isolation channel is opened；And
(3) passivation layer and the non-waveguiding structure are etched, groove depth is isolated needed for reaching.
10. method as claimed in claim 8 or 9, which is characterized in that performed etching in step (3) using dry etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711137912.3A CN109802026B (en) | 2017-11-16 | 2017-11-16 | Electro-optical switch with isolation slot or optical attenuator with isolation slot and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711137912.3A CN109802026B (en) | 2017-11-16 | 2017-11-16 | Electro-optical switch with isolation slot or optical attenuator with isolation slot and forming method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109802026A true CN109802026A (en) | 2019-05-24 |
| CN109802026B CN109802026B (en) | 2020-05-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711137912.3A Active CN109802026B (en) | 2017-11-16 | 2017-11-16 | Electro-optical switch with isolation slot or optical attenuator with isolation slot and forming method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030016938A1 (en) * | 2001-07-17 | 2003-01-23 | Sumitomo Electric Industries, Ltd. | Planar lightwave circuit type variable optical attenuator |
| US20040264836A1 (en) * | 2002-10-09 | 2004-12-30 | The Furukawa Electric Co., Ltd. | Optical circuit, method for manufacturing optical circuit, optical circuit device and method for controlling optical circuit device |
-
2017
- 2017-11-16 CN CN201711137912.3A patent/CN109802026B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030016938A1 (en) * | 2001-07-17 | 2003-01-23 | Sumitomo Electric Industries, Ltd. | Planar lightwave circuit type variable optical attenuator |
| US20040264836A1 (en) * | 2002-10-09 | 2004-12-30 | The Furukawa Electric Co., Ltd. | Optical circuit, method for manufacturing optical circuit, optical circuit device and method for controlling optical circuit device |
Non-Patent Citations (1)
| Title |
|---|
| 陈媛媛等: "Silicon-on-Insulator-Based Waveguide Switch with Fast Pesponse", 《CHIN.PHYS.LETT》 * |
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| CN109802026B (en) | 2020-05-15 |
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