CN109799534A - Diamond solution grid field effect transistor system - Google Patents
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- CN109799534A CN109799534A CN201910074815.7A CN201910074815A CN109799534A CN 109799534 A CN109799534 A CN 109799534A CN 201910074815 A CN201910074815 A CN 201910074815A CN 109799534 A CN109799534 A CN 109799534A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/30—Assessment of water resources
Abstract
The invention discloses diamond solution grid field effect transistor system and detection methods, including diamond solution grid field effect transistor and reference electrode, and diamond solution grid field effect transistor and reference electrode are arranged independently of each other, for being spaced apart in the seawater；Diamond solution grid field effect transistor and reference electrode form a capacitor；The outer end of reference electrode with voltage signal source for being connected；Diamond solution grid field effect transistor with voltage reader for being connected.The system is detected and is communicated using electric signal, and spread speed is fast, smaller by interfering in water, can be propagated at a distance, therefore reduces the limitation of detection and communication distance, is able to achieve long-range detection and communication.The transmission mode of electric signal improves detectivity, and the variation of detectable millivolt level shortens delay time, and delay time is in several microseconds.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to diamond solution grid field effect transistor system.
Background technique
Due to sound wave can long-distance communications in an aqueous medium, be always treated as underwater effective information carrier, Underwater Detection,
Communication, location and navigation technology are also always the primary study object of marine field.However on the one hand due to aqueous medium complexity,
Sound wave is serious by noise jamming in the water surface, the bottom, the reflected acoustic wave of object in water and water in application process；On the other hand, sound
Spread speed is low in water for wave, and time-varying space-variant is serious, and doppler spread is serious, these limit the development of underwater acoustic technology, shadow
It rings its detection, communicate, the validity and reliability of location navigation.
In recent years, since the calm types target such as quiet submarine and autonomous underwater vehicle weakens the advantage of acoustic sounding, water
The rate of sound communication, bandwidth, safety cause the fighting efficiency of underwater platform, weapon, preset unmanned systems that can not perform to pole
It causes, Ou Deng state, US and Russia places hope on non-acoustic detection, the communication technology, increases investment R&D intensity, it is desirable to learn to do as underwateracoustic
The strong supplement of section.
Diamond solution grid field effect transistor system be carried out based on electric signal target acquisition with communicate.Diamondization
It learns stability height, potential windows mouth width, need gate insulation layer, channel surface directly and electrolyte solution contacts, therefore can obtain
The electrostatic capacitance obtained between higher sensitivity, electrolyte solution-diamond interface is high, is 1-10 μ F/cm2, and between interface
Form electric double layer.The surface termination of diamond surface terminal malleable, multiplicity has irritability to various targets, such as: H-、
It is DNA, and diamond has many very excellent performances, such as highest forbidden bandwidth, highest thermal conductivity, highest critical
Disruptive field intensity, high electrons and holes mobility, high Young's modulus, low Poisson's ratio, and under hazardous chemical environment
Highly corrosion resistant, can work and its severe environment under, be known as " ultimate semiconductor ".Therefore diamond solution gate field-effect
Transistor system has very wide application prospect in communicating and detect in water.
Summary of the invention
Technical problem to be solved by the present invention lies in view of the above shortcomings of the prior art, provide a kind of diamond solution
Grid field effect transistor system, the system are detected and are communicated using electric signal, and spread speed is fast, by water interference compared with
It is small, it can be propagated at a distance, therefore reduce the limitation of detection and communication distance, be able to achieve long-range detection and lead to
Letter.The transmission mode of electric signal improves detectivity, and the variation of detectable millivolt level shortens delay time, delay
Time is in several microseconds.
In order to solve the above technical problems, the technical solution adopted by the present invention is that, including diamond solution gate field-effect crystal
Pipe and reference electrode, diamond solution grid field effect transistor and reference electrode are arranged independently of each other, for being spaced apart in sea
In water；Diamond solution grid field effect transistor and reference electrode form a capacitor；The outer end of reference electrode is used to believe with voltage
Number source is connected；Diamond solution grid field effect transistor with voltage reader for being connected；
Reference electrode is used for: in the external source voltage for receiving variation, generating the electric field of variation in the seawater；And the electricity
Field changes in the voltage value that the diamond solution grid field effect transistor applies, and is shown and become by the voltage reader
Change value；
Or/and reference electrode is used for: when receiving external source voltage, generate electric field in the seawater；And works as and entered by foreign matter
When between the diamond solution grid field effect transistor and reference electrode, the electric field strength in seawater is caused to change, applied
It changes in the voltage of the diamond solution grid field effect transistor, and changing value is shown by the voltage reader.
Further, the diamond solution grid field effect transistor include diamond substrate, single-crystal diamond epitaxial film,
Drain electrode, source electrode, resistance and power supply；Single-crystal diamond epitaxial film extension on the surface of diamond substrate obtains, in monocrystalline gold
Hard rock epitaxial film is equipped at intervals with drain electrode and source electrode on upper surface, and capacitor is formed between source electrode and reference electrode；One end of resistance with
Drain electrode is connected, the positive wire connection of the other end and power supply；The cathode of power supply is connect with source lead, and source electrode also passes through another
Wired earth；Resistance is also used to be connected with voltage reader.
Further, which is intrinsic diamond material, and rms surface roughness is less than 2nm, Raman half
Peak width is less than 6cm-1, X-ray diffraction half-peak breadth is less than 0.1 °.
Further, which is intrinsic diamond material, with a thickness of 0.05-50 μm, resistivity
Greater than 100M Ω cm, rms surface roughness is less than 1nm, and Raman half-peak breadth is less than 5cm-1, X-ray diffraction half-peak breadth is less than
0.05°。
Further, the material of the drain electrode and source electrode is one of Pt, Pd, Ir, Au, Ti metal or Pt/Ir, Pt/
The combination of metal in every group of Au/Ti.
Further, which selects DC power supply.
Further, which is Ag/AgCl electrode either Pt electrode.
The invention also discloses a kind of preparation methods of diamond solution grid field effect transistor system, which is characterized in that
The following steps are included:
Step 1: extension obtains single-crystal diamond epitaxial film on a diamond substrate；
Step 2: forming drain electrode and source electrode on single-crystal diamond epitaxial film surface；
Step 3: one end of resistance is connected by conducting wire with drain electrode；
Step 4: the resistance other end is connected by conducting wire with positive pole；
Step 5: the cathode of power supply is connected by conducting wire with source electrode；
Step 6: source electrode is passed through wired earth；
Step 7: square-wave generator is connected by conducting wire with reference electrode；
Step 8: square-wave generator is passed through another wired earth；
Step 9: square-wave generator is connected by conducting wire with reference electrode.
The invention also discloses a kind of test methods of diamond solution grid field effect transistor system, including following step
It is rapid:
Diamond solution grid field effect transistor and reference electrode are spaced apart in the seawater；Apply on reference electrode
Voltage forms electric field in the seawater, under electric field action, drain electrode source electrode between it is conductive by two-dimensional hole gas, reference electrode with
Source electrode forms capacitor；
When there are electricity when foreign matter, between reference electrode and source electrode between reference electrode and diamond solution grid field effect transistor
Capacitance changes, and is applied to the voltage between drain electrode and source electrode by electric field and changes, then ohmically voltage changes；
When changing the voltage being applied on reference electrode, the voltage between drain electrode and source electrode is applied to by electric field and is become
Change, then ohmically voltage changes, and obtains changing value by voltage reader, i.e., the signal at voltage signal source is transmitted to voltage
Reader completes the communication at voltage signal source between voltage reader；
Or working as the voltage being applied on reference electrode is definite value, when the value of voltage reader changes, shows there is foreign matter
Into between diamond solution grid field effect transistor and reference electrode.
Diamond solution grid field effect transistor system of the present invention has the advantages that 1. are transmitted using electric signal,
And the placement of reference electrode, apart from adjustable, detection range is remote, spread speed is fast, and it is smaller by being interfered in water, reduce detection and logical
The limitation of communication distance.2. improving detectivity, the variation of detectable millivolt level shortens delay time, when postponing
Between in several microseconds.3. greatly extending communication and detection means in water, communication and the development of Detection Techniques in water have been pushed.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of diamond solution grid field effect transistor system.
Wherein: a. diamond solution grid field effect transistor；1. diamond substrate；2. single-crystal diamond epitaxial film；3.
Drain electrode；4. source electrode；5. 6. power supply of resistance；7. reference electrode；8. square-wave generator；9. voltage reader.
Specific embodiment
Diamond solution grid field effect transistor system of the present invention, as shown in Figure 1, including that diamond solution gate field-effect is brilliant
Body pipe a and reference electrode 7, diamond solution grid field effect transistor a and reference electrode 7 are arranged independently of each other, put for being spaced
It sets in the seawater；Diamond solution grid field effect transistor a and reference electrode 7 form a capacitor；The outer end of reference electrode 7 is used for
It is connected with voltage signal source；Diamond solution grid field effect transistor a with voltage reader 9 for being connected；Reference electrode 7
For: in the external source voltage for receiving variation, the electric field of variation is generated in the seawater；And the electric field is molten in the diamond
The voltage value that liquid grid field effect transistor a applies changes, and shows changing value by the voltage reader 9；
Or/and reference electrode 7 is used for: in the external source voltage for receiving fixed value, generate electric field in the seawater；And when by
When foreign matter enters between the diamond solution grid field effect transistor a and reference electrode 7, the electric field strength in seawater is caused to occur
Change, the voltage for being applied to the diamond solution grid field effect transistor a changes, and is shown by the voltage reader 9
Show changing value.
Above-mentioned diamond solution grid field effect transistor a includes diamond substrate 1, single-crystal diamond epitaxial film 2, drain electrode
3, source electrode 4, resistance 5 and power supply 6；The extension on the surface of diamond substrate 1 of single-crystal diamond epitaxial film 2 obtains, in monocrystalline
It is equipped at intervals with drain electrode 3 and source electrode 4 on 2 upper surface of diamond epitaxial film, forms capacitor between source electrode 4 and reference electrode 7；
One end of resistance 5 is connected with drain electrode 3, and the other end is connect with the positive wire of power supply 6；The cathode of power supply 6 and source
The connection of 4 conducting wire of pole, source electrode 4 also pass through another wired earth；Resistance 5 is also used to be connected with voltage reader 9.Utilize electric signal
It is transmitted, reduces the limitation of detection and communication distance.
Traditional diamond field effect transistor is to utilize two in single-crystal diamond epitaxial film 2 between drain electrode 3, source electrode 4
It ties up hole gas and carries out conduction.It is the dielectric of one layer of insulation under grid, the diamond surface between grid and drain electrode 3 and source electrode 4
Constitute a capacitor.Voltage value between fixed drain electrode 3 and source electrode 4 is applied when changing the voltage V on grid by electric field
Voltage between drain electrode 3 and source electrode 4 can also occur similarly to change, so that the electric current between drain electrode 3 and source electrode will change.
Because being to connect between resistance 5 and drain electrode 3 and source electrode 4, the electric current when the curent change between drain electrode 3 and source electrode, on resistance 5
Also it one can change, and the voltage value of power supply 6 is constant, and the value of resistance 5 is fixed, therefore the voltage on resistance 5 is just become
Change.The voltage on 5 is read by voltage reader 9, to obtain information needed.
Infinitely increase when by dielectric thickness, then grid is just with same distance far from the Buddha's warrior attendant between drain electrode 3 and source electrode 4
Stone surface.No matter grid from it is how far, the working principle of the system is constant.When dielectric is replaced with seawater, grid is used
When reference electrode 7 replaces, 7 casing insulation of reference electrode, reference electrode 7 can place unlimited distance.By square-wave generator 8 to ginseng
It examines electrode 7 and applies a square-wave voltage, then resistance 5 will export corresponding square-wave voltage.When institute's detecting material, shell is to lead
When the metal of electricity is entered in the seawater between reference electrode 7 and drain electrode 3 and source electrode 4, the capacitor between reference electrode 7 and source electrode 4
Value is changed, this variation will lead to drain electrode 3 and the variation of source electrode 4, and drain electrode 3 and the variation meeting of source electrode 4 are so that on resistance 5
Curent change reads the voltage changed on resistance 5 by voltage reader 9 so that the voltage signal on resistance 5 can change
Signal, it is known that have foreign matter entrance.It is applied to likewise, the information to be transmitted is become voltage signal by square-wave generator 8
Reference electrode 7 will read out the voltage signal changed on resistance 5 using identical principle on voltage reader 9, pass through solution
The voltage signal read, it is known that the information of transmitting.
Above-mentioned diamond solution grid field effect transistor a includes diamond substrate 1, single-crystal diamond epitaxial film 2, drain electrode
3, source electrode 4, resistance 5 and power supply 6；The extension on the surface of diamond substrate 1 of single-crystal diamond epitaxial film 2 obtains, in monocrystalline
It is equipped at intervals with drain electrode 3 and source electrode 4 on 2 upper surface of diamond epitaxial film, forms capacitor between the source electrode 4 and reference electrode 7；Electricity
One end of resistance 5 is connected with drain electrode 3, and the other end is connect with the positive wire of power supply 6；The cathode and 4 conducting wire of source electrode of power supply 6 connect
It connects, source electrode 4 also passes through another wired earth；The resistance 5 is also used to be connected with voltage reader 9.
Above-mentioned diamond substrate 1 is intrinsic diamond material, and rms surface roughness is less than 2nm, and Raman half-peak breadth is small
In 6cm-1, X-ray diffraction half-peak breadth is less than 0.1 °.Single-crystal diamond epitaxial film 2 is intrinsic diamond material, with a thickness of
0.05-50 μm, resistivity is greater than 100M Ω cm, and rms surface roughness is less than 1nm, and Raman half-peak breadth is less than 5cm-1, X
X ray diffraction half-peak breadth is less than 0.05 °.The material of drain electrode 3 and source electrode 4 is one of Pt, Pd, Ir, Au, Ti metal or Pt/
The combination of metal in every group of Ir, Pt/Au/Ti.Drain electrode 3 and source electrode 4 can form Ohmic contact with single-crystal diamond epitaxial film 2.
5 power of resistance is high, perfect heat-dissipating, high temperature resistant, impact resistance and moisture proof；Power supply 6 is a kind of DC power supply.Reference electrode 7 is
Ag/AgCl electrode either Pt electrode.Each wire external layer has an insulating protective sleeve, waterproof, high temperature resistant, corrosion-resistant.
A kind of preparation method of above-mentioned diamond solution grid field effect transistor system, comprising the following steps:
Step 1: carrying out soda acid processing to diamond substrate 1, and dry up, extension obtains monocrystalline gold in diamond substrate 1
Hard rock epitaxial film 2, and 2 surface of single-crystal diamond epitaxial film is cleaned；The skill of epitaxy single-crystal diamond epitaxial film 2
Art is microwave plasma chemical vapor deposition technology, hot-wire chemical gas-phase deposition technology, direct current jet plasma technology etc.；
Step 2: using photoetching technique, metal deposition technique, lift-off technology in 2 upper surface of single-crystal diamond epitaxial film
Form drain electrode 3 and source electrode 4；
Step 3: one end of resistance 5 is connected by conducting wire with drain electrode 3；
Step 4: 5 other end of resistance is connected by conducting wire with 6 anode of power supply；
Step 5: the cathode of power supply 6 is connected by conducting wire with source electrode 4；
Step 6: source electrode 4 is passed through wired earth；
Step 7: square-wave generator 8 is connected by conducting wire with reference electrode 7；
Step 8: square-wave generator 8 is passed through another wired earth；
Step 9: square-wave generator 8 is connected by conducting wire with reference electrode 7.
For preparation method is better described, a specific embodiment is provided, as follows:
1. the sour alkali washing process using standard cleans diamond substrate 1, the non-diamond phase on surface is removed, then
Diamond substrate 1 is cleaned using alcohol, acetone, deionized water, using being dried with nitrogen diamond substrate 1.
2. growing one layer of 200nm thickness monocrystalline in diamond substrate 1 using microwave plasma CVD technology
Diamond epitaxial film 2.Growth conditions are as follows: power 1100W, chamber pressure are 45Torr, total gas flow rate 510sccm.
3. then sample is heated 90 seconds as 100 DEG C of hot plates in one layer of KXN5735-L0 photoresist of sample surfaces spin coating,
Then ultraviolet exposure machine 2s is used, sample is heated 90 seconds as 125 DEG C of hot plates then, finally impregnates sample 2 in developer solution
Minute, completion source, drain electrode patterns are transferred on sample；The gold of one layer of 200nm is deposited in sample surfaces using electron beam evaporation,
Experiment condition are as follows: chamber pressure 5 × 10-4Pa, room temperature；Then sample is impregnated in acetone, sample is removed, obtain drain electrode
3 and source electrode 4,200 μm of distance between drain electrode 3 and source electrode 4.
4. conducting wire is respectively welded on drain electrode 3 and source electrode 4.Welding method is soldering.
5. 5 one end of resistance is connected by conducting wire with drain electrode 3, the other end is connected by conducting wire with 6 anode of power supply；Power supply 6
Cathode is connected by conducting wire with source electrode 4；Conducting wire is connected and is grounded with 6 cathode of power supply.
6. square-wave generator 8 is connected and is grounded with reference electrode 7 with conducting wire except 500 meters.
The invention also discloses a kind of test methods of diamond solution grid field effect transistor system, including following step
It is rapid:
Diamond solution grid field effect transistor a and reference electrode 7 are spaced apart in the seawater；On reference electrode 7
Apply voltage, form electric field in the seawater, under electric field action, passes through two-dimensional hole gas conduction, reference between drain electrode 3 and source electrode 4
Electrode 7 and source electrode 4 form capacitor；
When between reference electrode 7 and diamond solution grid field effect transistor a there are when foreign matter, between reference electrode 7 and source electrode 4
Capacitance change, by electric field be applied to drain electrode 3 and source electrode 4 between voltage change, then the voltage on resistance 5 changes
Become；
When change is applied to the voltage on reference electrode 7, the voltage between drain electrode 3 and source electrode 4 is applied to by electric field and is sent out
Changing, then the voltage on resistance 5 changes, and obtains changing value by voltage reader 9, i.e., transmits the signal at voltage signal source
To voltage reader 9, the communication at voltage signal source between voltage reader 9 is completed；
Or working as the voltage being applied on reference electrode 7 is definite value, when the value of voltage reader 9 changes, shows to have different
Object enters between diamond solution grid field effect transistor a and reference electrode 7.Wherein, foreign matter shell is conductive metal.
Claims (9)
1. diamond solution grid field effect transistor system, which is characterized in that including diamond solution grid field effect transistor (a)
With reference electrode (7), the diamond solution grid field effect transistor (a) and reference electrode (7) are arranged independently of each other, between being used for
In the seawater every placement；The diamond solution grid field effect transistor (a) and reference electrode (7) form a capacitor；The ginseng
The outer end of electrode (7) is examined for being connected with voltage signal source；The diamond solution grid field effect transistor (a) is used for and electricity
Pressure reader (9) is connected；
The reference electrode (7) is used for: in the external source voltage for receiving variation, generating the electric field of variation in the seawater；And institute
It states electric field to change in the voltage value that the diamond solution grid field effect transistor (a) applies, and is read by the voltage
Device (9) shows changing value；
Or/and the reference electrode (7) is used for: when receiving external source voltage, generate electric field in the seawater；And when by foreign matter into
When entering between the diamond solution grid field effect transistor (a) and reference electrode (7), the electric field strength in seawater is caused to change
Become, the voltage for being applied to the diamond solution grid field effect transistor (a) changes, and by the voltage reader (9)
Show changing value.
2. diamond solution grid field effect transistor system according to claim 1, which is characterized in that the diamond is molten
Liquid grid field effect transistor (a) includes diamond substrate (1), single-crystal diamond epitaxial film (2), drain electrode (3), source electrode (4), electricity
Hinder (5) and power supply (6)；Single-crystal diamond epitaxial film (2) extension on the surface of diamond substrate (1) obtains, in institute
It states and is equipped at intervals with drain electrode (3) and source electrode (4) on single-crystal diamond epitaxial film (2) upper surface, the source electrode (4) and reference electrode
(7) capacitor is formed between；
One end of the resistance (5) is connected with drain electrode (3), and the other end is connect with the positive wire of power supply (6)；The power supply
(6) cathode is connect with source electrode (4) conducting wire, and the source electrode (4) also passes through another wired earth；The resistance (5) be also used to
Voltage reader (9) is connected.
3. diamond solution grid field effect transistor system according to claim 2, which is characterized in that the Buddha's warrior attendant stone lining
Bottom (1) is intrinsic diamond material, and rms surface roughness is less than 2nm, and Raman half-peak breadth is less than 6cm-1, X-ray diffraction half
Peak width is less than 0.1 °.
4. diamond solution grid field effect transistor system according to claim 2 or 3, which is characterized in that the monocrystalline
Diamond epitaxial film (2) is intrinsic diamond material, and with a thickness of 0.05-50 μm, resistivity is greater than 100M Ω cm, root mean square
Surface roughness is less than 1nm, and Raman half-peak breadth is less than 5cm-1, X-ray diffraction half-peak breadth is less than 0.05 °.
5. diamond solution grid field effect transistor system according to claim 4, which is characterized in that the drain electrode (3)
Material with source electrode (4) is the group of metal in one of Pt, Pd, Ir, Au, Ti metal or every group of Pt/Ir, Pt/Au/Ti
It closes.
6. diamond solution grid field effect transistor system according to claim 5, which is characterized in that the power supply (6)
Select DC power supply.
7. diamond solution grid field effect transistor system according to claim 6, which is characterized in that the reference electrode
It (7) is Ag/AgCl electrode either Pt electrode.
8. a kind of test side of diamond solution grid field effect transistor system described in any one of -7 according to claim 1
Method, which is characterized in that include the following:
Diamond solution grid field effect transistor (a) and reference electrode (7) are spaced apart in the seawater；In reference electrode (7)
Upper application voltage, forms electric field in the seawater, under electric field action, passes through two-dimensional hole gas between drain electrode (3) and the source electrode (4)
Conduction, the reference electrode (7) and source electrode (4) form capacitor；
When between the reference electrode (7) and diamond solution grid field effect transistor (a) there are when foreign matter, the reference electrode
(7) capacitance between source electrode (4) changes, and is occurred by the voltage that electric field is applied between the drain electrode (3) and source electrode (4)
Variation, then the voltage on the resistance (5) changes；
When change is applied to the voltage on the reference electrode (7), the drain electrode (3) and source electrode (4) are applied to by electric field
Between voltage change, then voltage on the resistance (5) changes, and obtains changing value by the voltage reader (9), i.e., will
Signal at voltage signal source is transmitted to voltage reader (9), completes logical between voltage reader (9) at voltage signal source
Letter；
Or when the voltage being applied on the reference electrode (7) is definite value, when the value of the voltage reader (9) changes,
Show there is foreign matter to enter between diamond solution grid field effect transistor (a) and reference electrode (7).
9. a kind of preparation method of diamond solution grid field effect transistor system, which comprises the following steps:
Step 1: extension obtains single-crystal diamond epitaxial film (2) on diamond substrate (1)；
Step 2: forming drain electrode (3) and source electrode (4) on single-crystal diamond epitaxial film (2) surface；
Step 3: one end of resistance (5) is connected by conducting wire with drain electrode (3)；
Step 4: resistance (5) other end is connected by conducting wire with power supply (6) anode；
Step 5: the cathode of power supply (6) is connected by conducting wire with source electrode (4)；
Step 6: the source electrode (4) is passed through wired earth；
Step 7: square-wave generator (8) are connected by conducting wire with reference electrode (7)；
Step 8: the square-wave generator (8) are passed through another wired earth；
Step 9: the square-wave generator (8) is connected by conducting wire with reference electrode (7).
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| CN114397347A (en) * | 2022-01-19 | 2022-04-26 | 西安交通大学 | Diamond biosensor and method for detecting CA19-9 antigen by using same |
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