CN109786362A - Without weld pad exterior wing crystal grain laminated construction and preparation method thereof - Google Patents
Without weld pad exterior wing crystal grain laminated construction and preparation method thereof Download PDFInfo
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- CN109786362A CN109786362A CN201711119770.8A CN201711119770A CN109786362A CN 109786362 A CN109786362 A CN 109786362A CN 201711119770 A CN201711119770 A CN 201711119770A CN 109786362 A CN109786362 A CN 109786362A
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Abstract
The invention discloses a kind of exterior wing crystal grain laminated construction of no weld pad, including the first crystal grain being located on substrate；First dielectric layer is conformally covered on the first crystal grain；First line redistribution layer is located on the first dielectric layer；First plug is electrically connected the first crystal grain and first line redistribution layer；First coating is conformally covered in first line redistribution layer；Second crystal grain is attached on the first coating；Second dielectric layer is conformally covered on the second crystal grain；Second route redistribution layer is located on the second dielectric layer；Second plug is electrically connected the second crystal grain and the second route redistribution layer；Second coating is conformally covered in the second route redistribution layer；Patterned conductive layer is located on the second coating；First line redistribution layer and the second route redistribution layer are connected to patterned conductive layer respectively by interlayer connection structure.
Description
Technical field
The invention relates to a kind of stereo encapsulation structures and preparation method thereof.In particular to a kind of the outer of no weld pad
Fan crystal grain laminated construction (bumpless fan-out chip stacking structure) and preparation method thereof.
Background technique
As electronic product pursues easy to carry, more high digital signal processing function, more high storage capacity and flexibilities
Demand, it is in need by different function circuit (for example, have Digital Logic, memory, simulation/radio frequency or other etc. differences
The circuit of function) and passive device (for example, capacitor, resistance, connector and antenna) be integrally formed a multi-chip module
(Multi-Chip Module, MCM).Especially in mobile communication electronics system using upper, due to need low-power and
The unit element of small size does not allow circuit integrated (PCB) on a printed circuit.So developing systemonchip
The three-dimensional encapsulations technologies such as (System-on-a-chip, SoC) and system in package (System in Package, SIP).
Systemonchip technology be by a complete computer system (e.g., including central processing unit (CPU), storage
Device, graphics processor and peripheral circuit etc.) it is integrated into single a chip.As semiconductor process technique is from micron
(micrometer) the quick evolution of nanometer (nanometer) is strided forward, although the component number that can be accommodated in one chip will
It is more and more, but integrated in view of the bottleneck of technique shrink technology and heterogeneous (heterogeneous integration)
Degree of difficulty quickly improves, so that the development cost of systemonchip quickly rises with the time.
System-in-Package technology is that the encapsulation chip integration as made by different technique, material forms one by multiple
System.Although integrating (Heterogeneous), reduction system cost, shortening time to market (TTM) with Miniaturized, heterogeneous,
And the advantages that promoting product efficiency.It but is engaged using conducting wire between the substrate due to encapsulating chip individually (substrate)
(wire bonding) or Flip Chip (flip chip) are as interconnection structure (interconnection).Therefore, when being
When the chip-count of lamination increases in system, required reservation routing or weld pad space will be more, not only result in package thickness and volume
It quicklys increase, is unfavorable for the miniature of system.Further, since Flip Chip system is using the solder bump of melting come will be in lamination layer
Chip engagement is encapsulated, when the chip-count of lamination in system increases, not only needs higher heat budget (thermal budget),
And it is located at the encapsulation chip solder bump of lamination bottom, overflow can be caused and damaged because by more thermal stress, in turn
Lead to thrashing.
Therefore, in need that advanced no weld pad exterior wing crystal grain laminated construction of one kind and preparation method thereof is provided, to solve
Know technology problem encountered.
Summary of the invention
One embodiment of this specification discloses a kind of exterior wing crystal grain laminated construction of no weld pad, comprising: substrate, the first crystal grain
(die), the first dielectric layer, first line redistribution layer (Redistribution Layer, RDL), the first plug, the first covering
Layer, the second crystal grain, the second dielectric layer, the second route redistribution layer, the second plug, the second coating, patterned conductive layer and layer
Between connection structure.First crystal grain is located on substrate.First dielectric layer conformally (conformally) is covered on the first crystal grain,
And it is contacted with substrate.First line redistribution layer is located on the first dielectric layer.First plug passes through the first dielectric layer, to be electrically connected
First crystal grain and first line redistribution layer.First coating is conformally covered in first line redistribution layer, and with the first dielectric
Layer contact.Second crystal grain is attached on the first coating.Second dielectric layer is conformally covered on the second crystal grain, and is covered with first
Cap rock contact.Second route redistribution layer is located on the second dielectric layer.Second plug passes through the second dielectric layer, to be electrically connected second
Crystal grain and the second route redistribution layer.Second coating is conformally covered in the second route redistribution layer, and is connect with the second dielectric layer
Touching.Patterned conductive layer is located on the second coating.Interlayer connection structure is respectively by first line redistribution layer and the second route weight
Layer of cloth is connected to patterned conductive layer.
The production method that another embodiment of this specification discloses a kind of no weld pad exterior wing crystal grain laminated construction, including it is following
Step: firstly, providing a substrate, and at least one first crystal grain is fixed on substrate.The first dielectric layer is formed, is conformally covered
The first crystal grain of lid, and contacted with substrate；In formation first line redistribution layer on the first dielectric layer；Formed at least one first insert
Plug passes through the first dielectric layer, to be electrically connected the first crystal grain and first line redistribution layer.The first coating is formed, is conformally covered
Lid first line redistribution layer, and contacted with the first dielectric layer.Then, at least one second crystal grain is attached at the first coating
On.The second dielectric layer is formed, conformally covers the second crystal grain, and contact with the first coating；In forming on the second dielectric layer
Two route redistribution layers；At least one second plug is formed, the second dielectric layer is passed through, to be electrically connected the second crystal grain and the second route
Redistribution layer；The second coating is formed, conformally covers the second route redistribution layer, and contact with the second dielectric layer.It is subsequent, in second
Patterned conductive layer is formed on coating, and by interlayer connection structure, respectively by first line redistribution layer and the second route weight
Layer of cloth is connected to patterned conductive layer.
According to above-described embodiment, this specification is to provide a kind of no weld pad exterior wing crystal grain laminated construction and its production side
Method.It is that first at least one good bare crystalline (Know Good Die, KGD) fitting is fixed on substrate；And it is total with dielectric layer
Shape covers good bare crystalline；Route redistribution layer is formed on dielectric layer, by plug by the signal input/output terminal of good bare crystalline
It is electrically connected with circuit redistribution layer, and via the connecting line of circuit redistribution layer, the pin position exterior wing for inputting a signal into/exporting is extremely
Onto the area Luo Zhe (landing area) far from good bare crystalline；Circuit redistribution layer, shape are conformally covered with dielectric covering layer again
The interconnection architecture being made of at one at least one good bare crystalline and a circuit redistribution layer.Then, it is with dielectric covering layer
Substrate, and repeat the above steps, by multiple connection structures mutual including at least one good bare crystalline and a circuit redistribution layer, vertically
It is stacked on dielectric covering layer.It is subsequent, patterned conductive layer is formed in the structure of crystal grain lamination, and by folded across crystal grain
The interlayer connection structure of layer structure, is connected to patterned conductive layer for the area Luo Zhe of each route redistribution layer respectively, so with it is outer
Portion's circuit connection.
Since crystal grain laminated construction is to be carried out with the conformal dielectric layer and coating being stacked on substrate to good bare crystalline
It directly encapsulates, does not need additional substrate to be encapsulated in advance to good bare crystalline, encapsulation step can be simplified, and reduce crystal grain
The package thickness and volume of laminated construction.In addition, since the layer across crystal grain laminated construction can be passed through between each good bare crystalline
Between connection structure carry out mutual connection, do not need reserved routing or weld pad space, crystal grain laminated construction can be made to accommodate number more
Good bare crystalline, is significantly increased packaging density.
Detailed description of the invention
More preferably understand in order to which the above-mentioned and other aspect to this specification has, special embodiment below, and appended by cooperation
Detailed description are as follows for schema:
The production according to depicted in an embodiment of this specification of Figure 1A to Fig. 1 J system is without weld pad exterior wing crystal grain laminated construction
Process structure diagrammatic cross-section.
[symbol description]
10: supporting substrate 100: without weld pad exterior wing crystal grain laminated construction
101: substrate 101a: the surface of substrate
102: the first crystal grain
The input/output terminal of the 102b: the first crystal grain of brilliant back of 102a: the first crystal grain
103: 104: the first dielectric layer of fractal film
105: first line redistribution layer 105a, 111a, 116a: interconnecting piece
105b-105f, 111b-111d, 116b-116d: the area Luo Zhe
106: the first plugs 107: through-hole
108: the first coating, 109: the second crystal grain
The input/output terminal of the 109b: the first crystal grain of brilliant back of 109a: the first crystal grain
110: the second dielectric layer, 111: the second route redistribution layer
112: the second plug, 113: the second coating
114: third crystal grain 115: third dielectric layer
116: tertiary circuit redistribution layer 117: third plug
118: third coating 119: patterned conductive layer
119a-119f: conductive part 120: interlayer connection structure
120a-120j: interlayer contact 121a-121f: opening
122a-122j: through hole 123: dielectric film
Specific embodiment
This specification is to provide a kind of no weld pad exterior wing crystal grain laminated construction and preparation method thereof, can simplify encapsulation step,
And the package thickness and volume of crystal grain laminated construction are reduced, packaging density is significantly increased.For the above-mentioned implementation to this specification
Example and other objects, features and advantages can be clearer and more comprehensible, and memory component and preparation method thereof is cited below particularly as preferable
Embodiment, and institute's accompanying drawings is cooperated to elaborate.
But it must be noted that these specific case study on implementation and method, be not intended to limit the invention.The present invention still may be used
It is implemented using other features, element, method and parameter.The it is proposed of preferred embodiment is only of the invention to illustrate
Technical characteristic, the scope of the claims being not intended to limit the invention.Have usually intellectual in the technical field, it can basis
The description of following description is not departing from scope of the invention, makees impartial modification and variation.Different embodiments with
Among schema, identical element will be indicated with identical component symbol.
Figure 1A to Fig. 1 J is please referred to, Figure 1A to Fig. 1 J system is made according to depicted in an embodiment of this specification outside without weld pad
Fan the process structure diagrammatic cross-section of crystal grain laminated construction 100.Production the method without weld pad exterior wing crystal grain laminated construction 100 include
Following step: firstly, providing a substrate 101.In some embodiments of this specification, substrate 101 can be one kind by being situated between
Electric material, such as Si oxide, silicon nitride, plastifying material or other suitable materials, the substrate or film constituted.Such as
In the present embodiment, substrate 101 can be it is a kind of by spin coating (spin coating), deposit or directly paste by way of, one
The plasticizing film formed on supporting substrate (carrier substrate) 10, such as polyimides (polyimide, PI) film.
In addition, before forming substrate 101, the property of can choose is carrying base in some embodiments of this specification
A fractal film (release film) 103 is initially formed on material 10.In the present embodiment, fractal film 103, which can be, is located at carrying base
A kind of plasticizing film between material 10 and substrate 101 (as depicted in Figure 1A).In other embodiments of this specification, substrate
Before 101, it is also an option that property forms a dielectric film 123 on fractal film 103.In the present embodiment, dielectric film
123 can be a kind of silicon oxide layer between fractal film 103 and substrate 101.
Then, it will at least first crystal grain 102 be fixed on substrate 101, and be contacted with substrate 101.In this specification
Some embodiments in, the first crystal grain 102 is a kind of good bare crystalline by validation test；And first crystal grain 102 by front
(front side) is started to the thickness of brilliant back (back side) 102a, and essentially less than 50 microns (μm).In the present embodiment,
The thickness essence of first crystal grain 102 is between 25 microns to 30 microns.The mode for fixing the first crystal grain 102, may include by
The brilliant back 102a of first crystal grain 102 sticks in the surface 101a of substrate 101 downward, and will be located at the defeated of 102 front end of the first crystal grain
Enter/export the end (Input/Output, I/O) 102b and is exposed to outer (as depicted in Figure 1B).
Later, the first dielectric layer 104 is formed, the first crystal grain 102, and the surface 101a with substrate 101 are conformally covered
It contacts (as depicted in Fig. 1 C).In some embodiments of this specification, the material of the first dielectric layer 104 of composition can be any
A kind of dielectric material.Such as in the present embodiment, the first dielectric layer 104, which can be, is formed by silica by depositing operation
Layer；And first the thickness of dielectric layer 104 be substantially less than 50 microns.But material, size and the production method of the first dielectric layer 104
It is not limited thereto.In other embodiments, the first dielectric layer 104 is also possible to silicon nitride, plastifying material or similar material.Shape
It may include the spin coating proceeding on the surface 101a of the first crystal grain 102 and substrate 101 at the mode of the first dielectric layer 104；Or
Dielectric material patch (tape) is directly pasted to the surface 101a in the first crystal grain 102 and substrate 101.
Then, in formation first line redistribution layer 105 on the first dielectric layer 104；And the first plug 106 is formed, is passed through
First dielectric layer 104, to be electrically connected the first crystal grain 102 and first line redistribution layer 105 (as depicted in Fig. 1 D).In this explanation
In some embodiments of book, the formation of first line redistribution layer 105, may include following step: firstly, being existed by depositing operation
A metal layer, such as copper or aluminum metal layer are formed on first dielectric layer 104.Again with etch process patterned metal layer, by one
The first dielectric layer 104 divided is exposed to outer.Wherein, first line redistribution layer 105 includes at least one interconnecting piece 105a, at least one
A area Luo Zhe 105b and at least one connecting line (not being painted), for the area Luo Zhe 105b is connected to interconnecting piece 105a.
The forming method of first plug 106 includes the following steps: before not yet forming first line redistribution layer 105, first
At least one through-hole 107 is formed in the first dielectric layer 104, is directed at the signal input/output end port 102b of the first crystal grain 102,
And the signal input/output end port 102b of the first crystal grain 102 is exposed to outer.And forming the same of first line redistribution layer 105
When, through-hole 107 is filled with metal material, is formed and first plug 106 in electrical contact of first line redistribution layer 105.In this reality
It applies in example, the input/output terminal 102b of interconnecting piece 105a and the first crystal grain 102, it is all longitudinal (along Z axis side with the first plug 106
To) overlapping, and it is in electrical contact each other.The area Luo Zhe 105b lateral (along X-direction) is far from the first crystal grain 102.In other words,
The input/output terminal 102b of one crystal grain 102, can be by the first plug 106, interconnecting piece 105a, connecting line (not being painted) electrically
It is connected to the area Luo Zhe 105b；And interconnection structure is formed by by first line redistribution layer 105 and the first plug 106, it can incite somebody to action
On the signal input/output end port 102b exterior wing of first crystal grain 102 to the area the Luo Zhe 105b far from 102 range of the first crystal grain.?
In one embodiment, the first plug 106 has vertical Z axis, and substantially 2 microns of cross-sectional width.
It is subsequent, form the first coating 108, conformally cover first line redistribution layer 105, and be exposed to outer the
One dielectric layer 104 contacts (as depicted in Fig. 1 E).In some embodiments of this specification, the material of the first coating 108 is constituted
Matter and its production method, can be identical or different with the material and method of the first dielectric layer 104 of production.
Then, at least one second crystal grain 109 is attached on the first coating 108.In some implementations of this specification
In example, the second crystal grain 109 is also a kind of good bare crystalline by validation test；And second the thickness of crystal grain 109 be essentially less than 50
Micron.In the present embodiment, the thickness essence of the second crystal grain 109 is between 25 microns to 30 microns.The patch of second crystal grain 109
Subsidiary formula formula, can be identical as the mode for fixing the first crystal grain 102, and the brilliant back 109a of the second crystal grain 109 is sticked in first downward
Coating 108, and the input/output terminal 109b for being located at 109 front end of the second crystal grain is exposed to outer (as depicted in Fig. 1 F).
The second dielectric layer 110 is re-formed, conformally covers the second crystal grain 109, and contact with the first coating 108；And in
The second route redistribution layer 111 is formed on second dielectric layer 110, is formed simultaneously the second plug 112 across the second dielectric layer 110,
To be electrically connected the input/output terminal 109b and the second route redistribution layer 111 of the second crystal grain 109；Re-form the second coating
113, the second route redistribution layer 111 is conformally covered, and contact with the second dielectric layer 110.Pass through the second route redistribution layer 111
Interconnecting piece 111a and connecting line (not being painted) and the second plug 112 are formed by interconnection structure, can be by the second crystal grain 109
It (is not drawn on the vertical X-Z plane exterior wing of signal input/output end port 109b to the area the Luo Zhe 111b far from 109 range of the second crystal grain
It is shown in Fig. 1 G).Due to the second dielectric layer 110 of production, the second route redistribution layer 111, the second plug 112 and the second coating
113 material and method, respectively with the first dielectric layer 104 of aforementioned production, first line redistribution layer 105, the first plug 106 and
The material and method of one coating 108 are identical, therefore no longer this is repeated.
It is subsequent, abovementioned steps are repeated, in attaching third crystal grain 114 on the second coating 113, and in the second coating
Third dielectric layer 115, tertiary circuit redistribution layer 116 (including at least interconnecting piece 116a and Luo Zhe area 116b), third are formed on 113
Plug 117 and third coating 118.In some embodiments of this specification, the area the Luo Zhe 105b of first line redistribution layer 105
Not with the first crystal grain 102, the second crystal grain 109, third crystal grain 114, the second route redistribution layer 111 and tertiary circuit redistribution layer
116 overlappings；And second route redistribution layer 111 the area Luo Zhe 111b not with third crystal grain 114 and tertiary circuit redistribution layer 116
Overlapping.
It will be appreciated, however, that first line redistribution layer 105, the second route redistribution layer 111 and tertiary circuit redistribution layer 116
The arrangement in the area Luo Zhe be not limited thereto.In some embodiments of this specification, first line redistribution layer 105, the second line
Road redistribution layer 111 and tertiary circuit redistribution layer 116 can also include the others area Luo Zhe；And a part of area Luo Zhe can be with position
Square route redistribution layer overlapping thereon.For example, in the present embodiment, first line redistribution layer 105 can also include the area Luo Zhe
105c, 105d and 105e；Second route redistribution layer 111 can also include the area Luo Zhe 111c and 111d；Tertiary circuit redistribution layer 116
It can also include the area Luo Zhe 116c and 116d.Wherein, the area the Luo Zhe 105e of first line redistribution layer 105, can be with tertiary circuit
The area the Luo Zhe 116c of redistribution layer 116 is overlapped (as depicted in Fig. 1 H).
It is subsequent, in formation patterned conductive layer 119 on third coating 118, and by interlayer connection structure 120, respectively
First line redistribution layer 105, the second route redistribution layer 111 and tertiary circuit redistribution layer 116 are connected to patterned conductive layer
119.In some embodiments of this specification, the formation of patterned conductive layer 119 and interlayer connection structure 120, including it is following
Step:
Firstly, third coating 118 is patterned with etch process, to form multiple openings in third coating 118
121a-121f is extended into third coating 118 by the upper surface of third coating 118.Again to etch work at least once
Skill passes through corresponding third and covers respectively at forming at least one through hole 122a-122j in each opening 121a-121f
Layer 118, tertiary circuit redistribution layer 116, third dielectric layer 115, the second coating 113, the second route redistribution layer 111, second are situated between
Electric layer 110 and the first coating 108 are used the area Luo Zhe 105b, 105c and 105d of first line redistribution layer 105, respectively
The area Luo Zhe 111b, 111c and 111b of two route redistribution layers 111 and the area Luo Zhe 116b, 116c of tertiary circuit redistribution layer 116
It is exposed to 116d outer.
In the present embodiment, through hole 122a system is formed among opening 121a, for by first line redistribution layer 105
The area Luo Zhe 105b is exposed to outer；Through hole 122b system is formed among opening 121b, for falling the second route redistribution layer 111
Area 111b be exposed to；Through hole 122c system is formed among opening 121c, for by the area Luo Zhe of tertiary circuit redistribution layer 116
116b is exposed to outer；Through hole 122d and 122e system is formed among opening 121d, is respectively intended to first line redistribution layer 105
The area Luo Zhe 105c and 105f be exposed to it is outer；Through hole 122f and 122g system is formed among opening 121e, is respectively intended to the
The area the Luo Zhe 116c of the three route redistribution layers 116 and area the Luo Zhe 111c of the second route redistribution layer 111 is exposed to outer；And through hole
122h, 122i and 122j system be formed in opening 121f among, be respectively intended to by the area the Luo Zhe 105d of first line redistribution layer 105,
The area the Luo Zhe 111d of the second route redistribution layer 111 and area the Luo Zhe 116d of tertiary circuit redistribution layer 116 is exposed to outer (such as Fig. 1 I institute
It is painted).
In some embodiments of this specification, with same depth through hole, such as through hole 122a, 122d and
122e can be formed by the same etch process.Such as among an embodiment, with same depth through hole 122d and
122e can be formed among opening 121d by single a etch process；Through hole 122a then passes through identical etch process,
It is formed simultaneously among opening 121a.But in another embodiment, through hole 122d and 122e can pass through different etching works
Skill is successively formed in same opening 121d.In addition, through hole with different depths, for example, through hole 122h, 122i and
122j can be formed among the same opening 121f by the same etch process.But in another embodiment, these run through
Hole 122h, 122i and 122j can be successively formed in same opening 121f by different etch process.
Then, with conductive material, such as copper, aluminium, tungsten or above-mentioned combination, third coating 118 is covered, and fills opening
121a-121f and through hole 122a-122g.It is subsequent, it is stop-layer with third coating 118, carries out flatening process, such as change
It learns mechanical lapping (Chemical-Mechanical Polishing, CMP), removes a part of conductive material, form patterning and lead
Electric layer 119 and interlayer connection structure 120；And after a series of last part technologies (not being painted), is irradiated or is heat-treated with ultraviolet light,
Make the denaturation of fractal film 103 to remove supporting substrate 10, completes as depicted in Fig. 1 J without weld pad exterior wing crystal grain laminated construction 100
Preparation.
Among the present embodiment, patterned conductive layer 119 may include be respectively formed in opening 121a-121f in it is more
A conductive part 119a-119f.Interlayer connection structure 120 may include the multiple layers being respectively formed in through hole 122a-122j
Between contact 120a-120j.Wherein, interlayer contact 120a is electrically connected the area the Luo Zhe 105b and pattern of first line redistribution layer 105
Change the conductive part 119a of conductive layer 119；Interlayer contact 120b is electrically connected the area the Luo Zhe 111b and figure of the second route redistribution layer 111
The conductive part 119b of case conductive layer 119；Interlayer contact 120c be electrically connected tertiary circuit redistribution layer 116 the area Luo Zhe 116b and
The conductive part 119c of patterned conductive layer 119；The area the Luo Zhe 105f of interlayer contact 120d electric connection first line redistribution layer 105
With the conductive part 119d of patterned conductive layer 119；The area Luo Zhe of interlayer contact 120e electric connection first line redistribution layer 105
The conductive part 119d of 105c and patterned conductive layer 119；Interlayer contact 120f is electrically connected falling for tertiary circuit redistribution layer 116
The conductive part 119e of area 116c and patterned conductive layer 119；Interlayer contact 120g is electrically connected falling for the second route redistribution layer 111
The conductive part 119e of area 111c and patterned conductive layer 119；Interlayer contact 120h is electrically connected tertiary circuit redistribution layer 116
The conductive part 119f of the area Luo Zhe 116d and patterned conductive layer 119；Interlayer contact 120i is electrically connected the second route redistribution layer 111
The area Luo Zhe 111d and patterned conductive layer 119 conductive part 119f；And interlayer contact 120j is electrically connected first line weight
The area the Luo Zhe 105d of the layer of cloth 105 and conductive part 119f of patterned conductive layer 119.
However, the connection design of patterned conductive layer 119 and interlayer connection structure 120 is not limited thereto.In this explanation
In the other embodiments of book, first line redistribution layer 105, the second route redistribution layer 111 and tertiary circuit weight cloth can also be passed through
The different area Luo Zhe of floor 116, the combination of the conductive part 119a-119f and interlayer contact 120a-120j that arrange in pairs or groups different are more to generate
Kind different interconnection structure, to provide the first crystal grain 102, the second crystal grain 109 and the different wire laying mode of third crystal grain 114.
Since the preparation of no weld pad exterior wing crystal grain laminated construction 100 is not needed using additional substrate come to good naked
Crystalline substance is encapsulated in advance, the first crystal grain 102, the second crystal grain 109 and the longitudinal lamination of third crystal grain 114 can be formed a solid
Crystal grain laminated construction.And replace known conducting wire engagement or flip by patterned conductive layer 119 and interlayer connection structure 120
Technology can save known technology with the interconnection structure formed between the first crystal grain 102, the second crystal grain 109 and third crystal grain 114
Keep for the space for routing or weld pad that packaging density is significantly increased for accommodating more crystal grain.Again because of outside no weld pad
Fan crystal grain laminated construction 100 does not form the first crystal grain 102, the second crystal grain 109 and third crystal grain 114 using solder bump
Interconnection structure, the heat budget of technique can be reduced, and can prevent thermal stress from causing solder bump overflow and leading to thrashing
The problem of.
According to above-described embodiment, this specification is to provide a kind of no weld pad exterior wing crystal grain laminated construction and its production side
Method.It is that first at least one good bare crystalline fitting is fixed on substrate；And with the conformal good bare crystalline of covering of dielectric layer；Then at
Route redistribution layer is formed on dielectric layer, is electrically connected the signal input/output terminal of good bare crystalline with circuit redistribution layer by plug
It connects, and via the connecting line of circuit redistribution layer, the pin position exterior wing for inputting a signal into/exporting to falling to separate good bare crystalline
In area；Circuit redistribution layer is conformally covered with dielectric covering layer again, forms one by least one good bare crystalline and an electricity
The interconnection architecture that road redistribution layer is constituted.Then, it using dielectric covering layer as substrate, and repeats the above steps, by multiple including extremely
A few good bare crystalline and the mutual connection structure of a circuit redistribution layer, vertical stack is on dielectric covering layer.It is subsequent, then at crystal grain
Patterned conductive layer, and the interlayer connection structure by passing through crystal grain laminated construction are formed in the structure of lamination, it respectively will be each
The area Luo Zhe of route redistribution layer is connected to patterned conductive layer, and then connect with external circuit.
Since crystal grain laminated construction is to be carried out with the conformal dielectric layer and coating being stacked on substrate to good bare crystalline
It directly encapsulates, does not need additional substrate to be encapsulated in advance to good bare crystalline, encapsulation step can be simplified, and reduce crystal grain
The package thickness and volume of laminated construction.In addition, since the layer across crystal grain laminated construction can be passed through between each good bare crystalline
Between connection structure carry out mutual connection, do not need reserved routing or weld pad space, crystal grain laminated construction can be made to accommodate number more
Good bare crystalline, is significantly increased packaging density.
Although the present invention has been disclosed as a preferred embodiment, however, it is not to limit the invention, any technology neck
Have usually intellectual in domain, without departing from the spirit and scope of the invention, when can make it is a little change and retouch, therefore this
Subject to the protection scope of invention scope of the claims institute defender attached after view.
Claims (10)
1. a kind of exterior wing crystal grain laminated construction of no weld pad, comprising:
One substrate；
One first crystal grain (die) is located on the substrate；
One first dielectric layer, conformally (conformally) is covered on first crystal grain, and is contacted with the substrate；
One first line redistribution layer (Redistribution Layer, RDL) is located on first dielectric layer；
One first plug passes through first dielectric layer, to be electrically connected first crystal grain and the first line redistribution layer；
One first coating is conformally covered in the first line redistribution layer, and is contacted with first dielectric layer；
One second crystal grain is attached on first coating；
One second dielectric layer is conformally covered on second crystal grain, and is contacted with first coating；
One second route redistribution layer is located on second dielectric layer；
One second plug passes through second dielectric layer, to be electrically connected second crystal grain and the second route redistribution layer；
One second coating is conformally covered in the second route redistribution layer, and contact with second dielectric layer；
One patterned conductive layer is located on second coating；And
The first line redistribution layer and the second route redistribution layer are connected to the pattern conductive respectively by one interlayer connection structure
Layer.
2. no weld pad exterior wing crystal grain laminated construction according to claim 1, wherein the interlayer connection structure includes:
One first interlayer contact passes through second coating, second dielectric layer and first coating, by the pattern conductive
One first conductive part of floor and one first area Luo Zhe (landing area) of the first line redistribution layer are electrically connected；And
One second interlayer contact passes through second coating, by one second conductive part of the patterned conductive layer and second line
One second area Luo Zhe of road redistribution layer is electrically connected；
Wherein, the area the first Luo Zhe not with second crystal grain and this second fall area overlapping.
3. no weld pad exterior wing crystal grain laminated construction according to claim 2, wherein the interlayer connection structure is further included:
One third interlayer contact passes through second coating, second dielectric layer and first coating, by the pattern conductive
One third conductive part of floor and an area third Luo Zhe of the first line redistribution layer are electrically connected；And
One the 4th interlayer contact passes through second coating, second dielectric layer and first coating, by the third conductive part
It is electrically connected with one the 4th area Luo Zhe of the first line redistribution layer；And the area the first Luo Zhe, the area third Luo Zhe and the 4th
The area Luo Zhe is isolated from each other.
4. no weld pad exterior wing crystal grain laminated construction according to claim 2, wherein the interlayer connection structure is further included:
One third interlayer contact passes through second coating, second dielectric layer and first coating, by the pattern conductive
One third conductive part of floor and an area third Luo Zhe of the first line redistribution layer are electrically connected；And
One the 4th interlayer contact passes through second coating, by the third conductive part and the one the 4th of the second route redistribution layer
The area Luo Zhe is electrically connected.
5. a kind of production method of no weld pad exterior wing crystal grain laminated construction, comprising:
One substrate is provided；
At least one first crystal grain is fixed on the substrate；
One first dielectric layer is formed, conformally covers first crystal grain, and contact with the substrate；
In forming a first line redistribution layer on first dielectric layer；
At least one first plug is formed, first dielectric layer is passed through, to be electrically connected first crystal grain and first line weight cloth
Layer；
One first coating is formed, conformally covers the first line redistribution layer, and contact with first dielectric layer；
At least one second crystal grain is attached on first coating；
One second dielectric layer is formed, conformally covers second crystal grain, and contact with first coating；
In one second route redistribution layer of formation on second dielectric layer；
At least one second plug is formed, second dielectric layer is passed through, to be electrically connected second crystal grain and second route weight cloth
Layer；
One second coating is formed, conformally covers the second route redistribution layer, and contact with second dielectric layer；
In forming a patterned conductive layer on second coating；And
An interlayer connection structure is formed, the first line redistribution layer and the second route redistribution layer are connected to the patterning respectively
Conductive layer.
6. the production method of no weld pad exterior wing crystal grain laminated construction according to claim 5, wherein providing the step of the substrate
Suddenly include:
A fractal film is formed on a supporting substrate (carrier substrate)；And
In forming a dielectric film on the fractal film.
7. the production method of no weld pad exterior wing crystal grain laminated construction according to claim 5, leads wherein forming the patterning
The step of electric layer and the interlayer connection structure, comprising:
Second coating is patterned, at least to form one first opening and one second opening in second coating；
One first through hole is formed in first opening, passes through second coating, second dielectric layer and first covering
One first area Luo Zhe of the first line redistribution layer is exposed to outer by layer；
One second through hole is formed in second opening, passes through second coating, by the 1 of the second route redistribution layer the
Two areas Luo Zhe are exposed to outer；And
First opening, the second opening, first through hole and second through hole are filled with a conductive material.
8. the production method of no weld pad exterior wing crystal grain laminated construction according to claim 7, wherein it is patterned this second
The step of coating further includes third opening, forms the patterned conductive layer and the interlayer connection structure, further includes:
A third through hole and one the 4th through hole are formed in third opening, which passes through second covering
One area third Luo Zhe of the first line redistribution layer is exposed to outside, the 4th by layer, second dielectric layer and first coating
Through hole passes through second coating, second dielectric layer and first coating, by the one the 4th of the first line redistribution layer
The area Luo Zhe is exposed to outer；And
Third opening, the third through hole and the 4th through hole are filled with the conductive material.
9. the production method of no weld pad exterior wing crystal grain laminated construction according to claim 7, wherein it is patterned this second
The step of coating further includes third opening, forms the patterned conductive layer and the interlayer connection structure, further includes:
A third through hole and one the 4th through hole are formed in third opening, which passes through second covering
One area third Luo Zhe of the first line redistribution layer is exposed to outside, the 4th by layer, second dielectric layer and first coating
Through hole passes through second coating, one the 4th area Luo Zhe of the second route redistribution layer is exposed to outer；And
Third opening, the third through hole and the 4th through hole are filled with the conductive material.
10. the production method of no weld pad exterior wing crystal grain laminated construction according to claim 7, wherein it is patterned this second
The step of coating further includes third opening, forms the patterned conductive layer and the interlayer connection structure, further includes:
A third through hole is formed in third opening, passes through second coating, second dielectric layer and first covering
One area third Luo Zhe of the first line redistribution layer is exposed to outer by layer；And
One the 4th through hole is formed in third opening, passes through second coating, by the 1 of the second route redistribution layer the
Four areas Luo Zhe are exposed to outer；And
Third opening, the third through hole and the 4th through hole are filled with the conductive material.
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| CN201711119770.8A CN109786362B (en) | 2017-11-14 | 2017-11-14 | External fan crystal grain laminated structure without welding pad and manufacturing method thereof |
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