CN109782534A - A kind of nano-pattern direct-writing device of local field drives and preparation method thereof - Google Patents
A kind of nano-pattern direct-writing device of local field drives and preparation method thereof Download PDFInfo
- Publication number
- CN109782534A CN109782534A CN201910005144.9A CN201910005144A CN109782534A CN 109782534 A CN109782534 A CN 109782534A CN 201910005144 A CN201910005144 A CN 201910005144A CN 109782534 A CN109782534 A CN 109782534A
- Authority
- CN
- China
- Prior art keywords
- nano
- direct write
- magnetic powder
- pdms
- pdms film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 86
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract description 86
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract description 86
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract description 86
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 86
- 239000006247 magnetic powder Substances 0.000 claims abstract description 69
- 239000007788 liquid Substances 0.000 claims abstract description 51
- 239000000725 suspension Substances 0.000 claims abstract description 46
- 239000000523 sample Substances 0.000 claims abstract description 38
- 230000005291 magnetic effect Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 18
- 230000005415 magnetization Effects 0.000 claims abstract description 9
- 238000005538 encapsulation Methods 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000004528 spin coating Methods 0.000 claims description 14
- 239000003921 oil Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000006229 carbon black Substances 0.000 claims description 9
- 239000004408 titanium dioxide Substances 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000010079 rubber tapping Methods 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims 1
- 238000009434 installation Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 50
- 238000005516 engineering process Methods 0.000 description 16
- 235000010215 titanium dioxide Nutrition 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- QFUKUPZJJSMEGE-UHFFFAOYSA-N 5-(hydroxymethyl)-1-(3-methylbutyl)pyrrole-2-carbaldehyde Chemical compound CC(C)CCN1C(CO)=CC=C1C=O QFUKUPZJJSMEGE-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- DDSDPQHQLNAGLJ-YEBWQKSTSA-N (2z)-6-(2-chlorophenyl)-2-[(4-methylpiperazin-4-ium-1-yl)methylidene]-8-nitro-4h-imidazo[1,2-a][1,4]benzodiazepin-1-one;methanesulfonate Chemical compound CS(O)(=O)=O.C1CN(C)CCN1\C=C/1C(=O)N2C3=CC=C([N+]([O-])=O)C=C3C(C=3C(=CC=CC=3)Cl)=NCC2=N\1 DDSDPQHQLNAGLJ-YEBWQKSTSA-N 0.000 description 1
- 238000010146 3D printing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
The invention discloses nano-pattern direct-writing devices of a kind of local field drives and preparation method thereof, it is related to technical field of nano-processing, there is continuous and equidimension network mother matrix with nano-imprint process production, the lattice of mother matrix is transferred on PDMS film, make the PDMS film with grid chamber, nano-magnetic powder suspension direct write liquid is made again, nano-magnetic powder suspension direct write liquid is filled into the grid chamber of PDMS film, encapsulation has been filled up completely the PDMS film of nano-magnetic powder suspension direct write liquid, prepare front panel and rear panel, packaged PDMS film is clipped among front and back panel.The magnetic eliminating bar that installation can be mobile with panel parallel below plate below magnetizes " paintbrush " of the AFM probe as direct write, changes magnetization AFM probe motion profile, realizes nano-pattern direct write, and mobile magnetic eliminating bar realizes nano graph reconstruct.
Description
Technical field
The invention belongs to technical field of nano-processing, and in particular to a kind of nano-pattern direct-writing device of local field drives
And preparation method thereof.
Background technique
With the continuous development of nano-fabrication technique, more requirements at the higher level are also constantly proposed to nano graph processing technology.
Traditional microelectronic component will be replaced by lightweight, integrated and functionalization nano-device.Modern nanofabrication technique includes
Photoetching technique, Soft lithograph technology, nanometer embossing, direct writing technology etc. have conventional machining techniques can not on nanoscale
The advantage of analogy is increasingly becoming the important means of scientific research and production and processing.
Direct writing technology be it is a kind of on matrix by microcell reaction or substance transmit the micro- of construction structure and functional unit plus
Work technology, earliest by Gao and Sonin study molten wax drop three-dimensional structure when propose, be developed so far be widely used to biology,
The fields such as electronics, the energy.Earliest direct writing technology can realize metal, ceramics, polymer, hydrogel in sub-micron to cm range
The sequencing of equal complex three-dimensionals configuration is constructed, and configuration process is controlled by CAD, (plane, spherical surface, irregular in different shape matrix
Curved surface) on complete.The characteristics of comprehensive direct writing technology, is similar with broad sense 3D printing technique.
Current main micro-nano pattern direct writing technology mainly has laser writing technology and direct electronic beam writing technology, according to not
Same configuration principle and molding mode, there is different applications in micro-nano electronic field.However existing direct writing technology is being schemed
All there is biggish challenges in terms of case precision, size, recyclable, cost.For example, laser writing technology needs are costly and complicated
Equipment, equipment pitch error and offset due to caused by inertia, static friction, loosening etc., thus formed it is certain it is mechanical accidentally
Difference.And there is relatively low resolution ratio, the positioning accuracy of usual electric platforms reaches micron or sub-micrometer scale.In laser direct-writing
In the process, since there are optical proximity effects for focal spot, this be easy to cause exposure distribution uneven and leads to resist figure
Distortion, limits the resolution ratio of direct-write photoetching.Although electron-beam direct writing has the resolution ratio and lower-cost advantage of superelevation,
The process for being electron-beam direct writing is point by point scanning, requires to stay for some time on the pixel of each pattern, which has limited
The speed of electron-beam pattern direct write.The pattern of laser direct-writing and the direct electronic beam writing technology direct write on material be all it is disposable,
Direct write cannot be recycled and realize reconstruct, there is lower economic benefit.These technologies belong to the materials processing technology of contact, no
It is able to achieve noncontact procession.
For current application field, above-mentioned technical problem is the main difficulty that current nano-pattern direct writing technology faces.
Therefore, it is necessary to improve to the prior art, disadvantages mentioned above has been overcome.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of nano-pattern direct-writing device of local field drives and its systems
Preparation Method, can it is simple, efficiently, quickly manufacture nano-pattern.
In order to achieve the above objectives, the nano-pattern direct-writing device of a kind of local field drives of the present invention, including magnetization
AFM probe, frame, the direct write plate being fixed in frame, wherein magnetized AFM probe is in direct write plate for being write, side
Upper slide of frame is dynamic to be connected with magnetic eliminating bar, and magnetic eliminating bar is located at below direct write plate, and direct write plate includes the PDMS film with grid chamber, tool
Have filled with nano-magnetic powder suspension direct write liquid in the PDMS film of grid chamber, nano-magnetic powder suspension direct write liquid includes 56-71%
No. 10 white oils, the nano-magnetic powder of 24-38.5%, the titanium dioxide of 2-3.5% and 2.1-3.6% white carbon black.
Further, in nano-magnetic powder suspension direct write liquid, the partial size of nano-magnetic powder is bigger, and the representative fraction of No. 10 white oils is got over
Greatly.
A kind of preparation method of the nano-pattern direct-writing device of local field drives, comprising the following steps:
Step 1, production have continuous and the single-layer reticulated structure of equidimension mother matrix；
Lattice on the mother matrix of network made from step 1 is transferred on PDMS film by step 2, production
PDMS film with grid chamber；
Step 3, production nano-magnetic powder suspension direct write liquid；
Step 4 fills the nano-magnetic powder suspension direct write liquid in step 3 to the grid of the PDMS film with grid chamber
In chamber；
Step 5, encapsulation have been filled up completely the PDMS film with grid chamber of nano-magnetic powder suspension direct write liquid；
Step 6 prepares front panel and rear panel, and the PDMS film with grid chamber packaged in step 5 is clipped in
Between front panel and rear panel；
Step 7 installs magnetic eliminating bar in the lower section of plate below, and magnetic eliminating bar is enable to move horizontally relative to rear panel；
Step 8, magnetization AFM probe, make its paintbrush as direct write.
Further, step 1 the following steps are included:
Step 1.1 pre-processes cleaning of silicon wafer degree, then in the uniform spin coating photoresist film of silicon chip surface；
Step 1.2 carries out front baking to the silicon wafer for being coated with photoresist film that step 1.1 obtains；
Step 1.3, using the mask plate with nanometer lattice, the nanometer lattice on mask plate is copied to light
In photoresist；
Step 1.4, solidification photoresist；
Nanometer lattice on mask plate is transferred to silicon chip surface, then removes photoresist by step 1.5, etching silicon wafer.
Further, in step 1, it is at a high speed 1500 revs/min that photoresist spin coating low speed, which is 450 revs/min, ultraviolet light
Photo-etching machine exposal time 7-9s, developing time 12s-15s.
Further, step 2 the following steps are included:
Step 2.1, according to prepolymer and curing agent according to (10~10.5): 1 proportional arrangement PDMS, will be configured
PDMS is vacuumized, and removes the bubble in PDMS；
The PDMS vacuumized is spin-coated on the continuous and equidimension network mother matrix made by step 2.2, is revolved
It applies；
The good sample of the spin coating that step 2.3, curing schedule 2.2 obtain；
Step 2.4 strips down the PDMS film with grid chamber after solidification that step 2.3 obtains, is had
There is the PDMS film of grid chamber.
Further, step 4 the following steps are included:
Configured nano-magnetic powder suspension direct write liquid is poured on the PDMS film with grid chamber by step 4.1, is made straight
Liquid stream is write to enter in the grid chamber of the PDMS film with grid chamber；
Air in step 4.2, removal grid chamber, is filled up completely nano-magnetic powder suspension direct write liquid with grid chamber
PDMS film grid chamber.
Further, step 5 the following steps are included:
Step 5.1 prepares PDMS, is uniformly mixed according to prepolymer and curing agent according to the ratio of (10~10.5), removal
Bubble in PDMS；
Step 5.2, the PDMS after vacuumizing is spin-coated on be filled up completely nano-magnetic powder suspension direct write liquid have grid chamber
On the PDMS film of room；
Step 5.3, step 5.2 is obtained it is product solidified.
Further, in step 7, magnetic eliminating bar is mounted below rear panel, is equipped with frame outside plate and rear panel in front,
Scuncheon is provided with sliding rail, and magnetic eliminating bar both ends are mounted in sliding rail.
Further, in step 8, routinely tapping or contact mode probe on plating magnetosphere preparation to AFM probe into
Row magnetization.
Compared with prior art, the present invention at least has technical effect beneficial below, and the present invention is visited using magnetized AFM
Needle needle point forms a local magnetic field, when probe tip is close to front panel and streaks certain track, drives near local magnetic field
Nanoscale magnetic powder front panel movement in suspension direct write liquid in grid, the magnetic powder of black are suspended in close to front panel grid
Topmost, the consistent figure in track is formed and streaked on transparent front panel, and figure is composed of several grid pixels.
Magnetic eliminating bar after mobile lower panel starts the nano-magnetic powder for being suspended in close front panel grid the top mobile to lower panel,
It realizes pattern " removing ", such pattern can be removed and be written repeatedly.This is it may be said that the pattern direct write in nanometer range lining is done
" doing at will " in a certain range and degree is arrived.Due to local field drives, when magnetized probe tip is close to front panel
Can direct write pattern, needle point is not required to and material, had not only increased the service life of needle point in this way but also had not destroyed material surface.We
Method is a kind of simple, efficient, quickly manufacture nano-pattern direct-writing device method.Any nano-pattern, and pattern can be write
It can remove and be written repeatedly, economic benefit is high.The contactless nano-scale patterns direct write processing of probe tip can be achieved.It can be with
It is widely applied in various contactless material processing.
One pixel needs of the every processing of electron-beam direct writing stay for some time to form pixel, are finally combined into pattern.
Present direct writing means are instantaneously streaked with magnetized AFM probe can form pattern, improve the speed of direct write.
Detailed description of the invention
Fig. 1 is present invention process schematic diagram one；
Fig. 2 is present invention process schematic diagram two；
Fig. 3 is the schematic diagram that grid chamber PDMS film is mixed among front and back panel；
In figure: 1. magnetized AFM probes；2. the PDMS film with grid chamber；3. nano-magnetic powder suspension direct write liquid；4.
Magnetic eliminating bar；5. front panel；6. rear panel, black arrow direction is the nano-magnetic powder direction of motion in figure, and white arrow is AFM probe
Motion profile.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair
Limitation of the invention.In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply opposite
Importance or the quantity for implicitly indicating indicated technical characteristic.Define " first " as a result, the feature of " second " can be bright
Show or implicitly include one or more of the features.In the description of the present invention, unless otherwise indicated, " multiple " contain
Justice is two or more.In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, art
Language " installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or
It is integrally connected；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, it can also be by between intermediary
It connects connected, can be the connection inside two elements.For the ordinary skill in the art, can be understood with concrete condition
The concrete meaning of above-mentioned term in the present invention.
A kind of nano-pattern direct-writing device of local field drives, including magnetized AFM probe 1, frame are fixed on frame
In direct write plate, wherein magnetized AFM probe 1 for being write in direct write plate, slidably connects magnetic eliminating bar 4, disappears on frame
Magnetic stripe 4 is located below 6 lower section of plate, and direct write plate includes the PDMS film 2 with grid chamber, the PDMS film with grid chamber
About 2 are respectively fixed with top panel 5 and lower panel 6, suspend directly in the PDMS film 2 with grid chamber filled with nano-magnetic powder
Liquid 3 is write, nano-magnetic powder suspension direct write liquid 3 includes No. 10 white oils, the nano-magnetic powder of 24-38.5%, 2-3.5% of 56-71%
Titanium dioxide and 2.1-3.6% white carbon black.
Wherein, the grid chamber on the PDMS film 2 with grid chamber includes several close-connected cells, each
Cell is a cavity, and the shape of cell can be the same or different, and all cells closely link together,
There is no gap between cell, the upper and lower surface of all cells flushes.
Referring to Fig.1, a kind of preparation method of the nano-pattern direct-writing device of local field drives includes the following steps:
Step 1 has continuous and equidimension network (square grid, triangle gridding or more with nano-imprint process production
Side shape grid) mother matrix；
The lattice of network mother matrix in step a is transferred on PDMS film by step 2, and production has grid
The PDMS film 2 of chamber；
Step 3, production nano-magnetic powder suspension direct write liquid 3；
Step 4 fills the nano-magnetic powder suspension direct write liquid 3 in step 3 to the net of the PDMS film 2 with grid chamber
In lattice chamber；
Step 5, encapsulation have been filled up completely the PDMS film 2 with grid chamber of nano-magnetic powder suspension direct write liquid；
Step 6 prepares front panel 5 and rear panel 6, and PDMS film 2 packaged in step 5 is clipped in front panel 5 with after
Between panel 6；
Step 7, below, the magnetic eliminating bar 4 that can be moved in parallel relative to front panel 5 and rear panel 6 is installed in the lower section of plate 6,
Magnetic eliminating bar 4 is made of magnetic material；
" paintbrush " of step 8, magnetization AFM probe 1 as direct write；
Step 9 changes 1 motion profile of AFM magnetized probe, realizes nano-pattern direct write.Mobile magnetic eliminating bar 4 realizes nanometer figure
Shape reconstruct.
In step 1, mother matrix is made of nanometer embossing, and the mask plate of photoetching technique has continuous and equidimension grid
Structure (square grid, triangle gridding or polygonal mesh), the positive photoresist of photoresist model EPG-535, photoresist spin coating
Low speed is arranged 450 revs/min, and high speed is arranged 1500 revs/min, ultraviolet light photo-etching machine exposal time 7-9s, developing time 12-
15s.Spin coating low velocity is the effect that a first low speed is uniformly spread out.High speed spin coating has determined the thickness of photoresist, thickness effect
The depth of grid chamber.Time for exposure and developing time combined influence production figure precision and quality.
In step 1, the web thickness (depth) of preparation is 1-2 μm.All lattices must be unified, and each grid is suitable
In a pixel, each pixel is consistent, and the pattern of formation is just regular, and the area of each net cross-section is identical, value model
It encloses for 3600nm2-6400nm2。
In step 3, nano-magnetic powder suspension direct write liquid includes No. 10 white oils, nano-magnetic powder, titanium dioxide and white carbon black, selection
When nano-magnetic powder partial size difference, the ratio of each component is not also identical, and nano-magnetic powder average grain diameter is bigger, No. 10 white oil proportions
It is bigger, while nano-magnetic powder proportion is smaller；After each component blender uniform stirring, it is ensured that nano-magnetic powder even suspension in
In direct write liquid, the interference of extraneous various fields not will receive, will not float will not sink, and will not occur actively to reunite.
If when nano-magnetic powder (average grain diameter 20nm), including No. 10 white oil 56-57%, nano-magnetic powder (average grain diameter 20nm)
37.6-38.5%, titanium dioxide 2-3% and white carbon black 2.1-2.5% composition.
If when nano-magnetic powder (average grain diameter 40nm), nano-magnetic powder suspension direct write liquid includes No. 10 white oil 60-62%, nanometer
Magnetic powder (average grain diameter 40nm) 32-34.5%, titanium dioxide 2-3.5% and white carbon black 2.1-3.6%.
If when nano-magnetic powder (average grain diameter 60nm), nano-magnetic powder suspension direct write liquid includes No. 10 white oil 64-67%, nanometer
Magnetic powder (average grain diameter 60nm) 28-30.5%, titanium dioxide 2-3% and white carbon black 2.1-2.5%.
If when nano-magnetic powder (average grain diameter 80nm), nano-magnetic powder suspension direct write liquid includes No. 10 white oil 69-71%, nanometer
Magnetic powder (average grain diameter 20nm) 24-26%, titanium dioxide 2-3% and white carbon black 2.1-2.5%.
In step 5, the PDMS film that nano-magnetic powder suspension direct write liquid is filled up completely in grid chamber is statically placed in air floating platform
Stabilization, glued nano-magnetic powder suspension direct write liquid extra at grid ridge, was removed in vaccum-pumping equipment with electrostatic paster upper 1 hour
Micro-bubble in direct write liquid, while nano-magnetic powder suspension direct write liquid can be made to be filled up completely the grid chamber of PDMS film, with scraping
The method of painting is packaged, and nano-magnetic powder suspension direct write liquid is completely in the grid chamber of PDMS film.
In step 8, magnetization AFM probe is such by plating one layer of magnetism Co on the probe of the contact mode of atomic force
AFM probe needle point is provided with local magnetic field.
Specific embodiment
Step 1: and equidimension network motherboard continuous with nano-imprint process production, in the present embodiment, grid chamber
Cross section is the square that side length is 700nm.Firstly, being pre-processed to cleaning of silicon wafer degree, in the smooth uniform spin coating 2 of silicon chip surface
μm -3 μm and do not have defective photoresist film, the positive photoresist of photoresist model EPG-535, photoresist spin coating low speed is set
450 revs/min are set, then 1500 revs/min of high speed setting carries out front baking to sample, increases the adherency of EPG-535 glue and silicon wafer
Power.Secondly, alignment and exposure 7s, using the mask plate with nanometer lattice, the method exposed using ultraviolet light exposure formula
Exposure production lattice on a photoresist, obtains motherboard.Then develop to sample, developing time 15s, developer solution is 5 ‰
NaOH aqueous solution copies to the pattern on mask plate on photoresist in this way.15min is dried after sample is placed on 100 DEG C of drying-plates,
Solvent is evaporated to solidify photoresist.Nanometer lattice on mask plate is transferred to silicon chip surface by last etching technics.It uses again
5 ‰ NaOH aqueous solutions remove photoresist.
Step 2: the pattern on continuous and equidimension network mother matrix that step 1 is made is transferred on PDMS film,
Make the PDMS film 2 with grid chamber.The model of the PDMS used is that 184 type of sylgard is produced by Dow Corning Corporation.
According to prepolymer and curing agent according to (10~10.5) when preparation: 1 ratio is uniformly mixed, and configured PDMS is set in vacuum
10min is vacuumized in standby, removes the micro-bubble in PDMS.The PDMS vacuumized is spin-coated on to the continuous and equidimension net made
On lattice structure mother matrix, speed 500rad/min 30s, quick 2500rad/min 15s at a slow speed is arranged in spin coater.Spin coating is good
Sample is placed on 100 DEG C of drying-plate solidification 1h.Finally, the PDMS film 2 with grid chamber being fully cured is stripped down, this
Pattern on Shi Xu and equidimension network mother matrix, which has been transferred on PDMS film 2 to get having arrived, has grid chamber
PDMS film 2.
Step 3: main No. 10 white oils 57% of nano-magnetic powder suspension direct write liquid 3, nano-magnetic powder (average grain diameter 20nm)
37.5%, titanium dioxide 3% and white carbon black 2.5% form.Nano-magnetic powder is dispersed in suspension direct write liquid 3 after stirring, will not
By the interference of extraneous various fields, will not float will not sink, and will not occur actively to reunite.
Step 4: the PDMS film 2 with grid chamber, chamber includes four sides being sequentially connected end to end and one
Horizontal plane, horizontal plane are located at bottom, configured nano-magnetic powder suspension direct write liquid 3 are poured on PDMS film 2, direct write liquid 3
It can flow into the grid chamber of PDMS film, the air of possible grid chamber can hinder direct write liquid to be filled up completely chamber, by sample
It is placed on the air removed in grid chamber in vaccum-pumping equipment, nano-magnetic powder suspension direct write liquid is made to be filled up completely PDMS film
Grid chamber.
Step 5: prepare PDMS according to prepolymer and curing agent according to (10~10.5): 1 ratio is uniformly mixed, and will be configured
Good PDMS vacuumizes 10min in vacuum equipment, removes the micro-bubble in PDMS.The PDMS vacuumized is spin-coated on completely
On the PDMS film 2 with grid chamber for filling nano-magnetic powder suspension direct write liquid 3.Speed 500rad/ at a slow speed is arranged in spin coater
Min 30s, quick 3500rad/min 20s.The good sample of spin coating is placed on 100 DEG C of drying-plate solidification 1h.In this way, nano-magnetic powder
Suspension direct write liquid 3 is completely in the grid chamber of PDMS film 2.
With reference to Fig. 3, step 6: front panel 5 and rear panel 6 are prepared, before PDMS film packaged in step 5 is mixed in
Between panel 5 and rear panel 6.Wherein the material of front panel and rear panel is PET hard transparent plastic film (or other transparent plastics
Ganoine thin film), with a thickness of 0.5mm.Since PDMS film is transparent elastomer, slightly toughness, 5 He of front panel is placed it in
Between rear panel 6, three is fixed together, and front panel 5 and rear panel 6 shield to packaged PDMS film.
Step 7, with reference to Fig. 1 and Fig. 2, magnetic eliminating bar 4 is mounted below finished product made from step 6, and magnetic eliminating bar 4 can be with front
Plate 5 and rear panel 6 move in parallel.In 4 moving process of magnetic eliminating bar, the nano-magnetic powder in inswept area grid will receive magnetic eliminating bar 4
Influence move downwards, leave the top of chamber, return to original state.
Step 8, the magnetization AFM probe 1 is ferromagnetic by plating Co, Fe etc. on the routinely probe of tapping or contact mode
Property layer preparation.Afm tip will form certain local magnetic field in this way.
Step 9, with reference to Fig. 1 and Fig. 2, change 1 motion profile of AFM magnetized probe, the nanometer in 2 grid chamber of DMS film
Magnetic powder can be mobile to needle point, and is finally suspended in the top (gray area in Fig. 1 and Fig. 2) of chamber, one picture of grid protocol
Vegetarian refreshments, the combination of several grid pixels realize nano-pattern direct write to form pattern.Mobile magnetic eliminating bar realizes nano graph
Reconstruct.
The method is not limited to nano-pattern direct write pattern, can also further realize that non-contact material is processed.
The present invention relates to technical field of nano-processing, are the nano-pattern direct-writing device and its system of a kind of local field drives
Preparation Method has continuous and equidimension network mother matrix with nano-imprint process production, then by the lattice of mother matrix
It is transferred on PDMS film, the PDMS film with grid chamber is made, then make nano-magnetic powder suspension direct write liquid, by nano magnetic
Powder suspension direct write liquid is filled into the grid chamber of PDMS film, and encapsulation has been filled up completely nano-magnetic powder suspension direct write liquid
PDMS film prepares front panel and rear panel, and packaged PDMS film is clipped among front and back panel.Below plate below
Installation can magnetize " paintbrush " of the AFM probe as direct write with the magnetic eliminating bar of panel parallel movement, change magnetization AFM probe fortune
Dynamic rail mark, realizes nano-pattern direct write, and mobile magnetic eliminating bar realizes nano graph reconstruct.
A specific embodiment of the invention is described in conjunction with attached drawing above, but these explanations cannot be understood to limit
The scope of the present invention, protection scope of the present invention are limited by appended claims, any in the claims in the present invention base
Change on plinth is all protection scope of the present invention.
Claims (10)
1. a kind of nano-pattern direct-writing device of local field drives, including magnetized AFM probe (1), frame are fixed on frame
In direct write plate, wherein magnetized AFM probe (1) for being write in direct write plate, slidably connects magnetic eliminating bar on frame
(4), magnetic eliminating bar (4) is located at below direct write plate, and direct write plate includes the PDMS film (2) with grid chamber, has grid chamber
PDMS film (2) in be filled with nano-magnetic powder suspension direct write liquid (3), nano-magnetic powder suspension direct write liquid (3) includes 56-71%'s
No. 10 white oils, the nano-magnetic powder of 24-38.5%, the titanium dioxide of 2-3.5% and 2.1-3.6% white carbon black.
2. a kind of nano-pattern direct-writing device of local field drives according to claim 1, which is characterized in that nano magnetic
In powder suspension direct write liquid (3), the partial size of nano-magnetic powder is bigger, and the representative fraction of No. 10 white oils is bigger.
3. a kind of preparation method of the nano-pattern direct-writing device of local field drives, which comprises the following steps:
Step 1, production have continuous and the single-layer reticulated structure of equidimension mother matrix；
Lattice on the mother matrix of network made from step 1 is transferred on PDMS film by step 2, and production has
The PDMS film (2) of grid chamber；
Step 3, production nano-magnetic powder suspension direct write liquid (3)；
Step 4 fills the nano-magnetic powder suspension direct write liquid (3) in step 3 to the net of the PDMS film (2) with grid chamber
In lattice chamber；
Step 5, encapsulation have been filled up completely the PDMS film (2) with grid chamber of nano-magnetic powder suspension direct write liquid (3)；
Step 6 prepares front panel (5) and rear panel (6), by the PDMS film (2) with grid chamber packaged in step 5
It is clipped between front panel (5) and rear panel (6)；
Step 7 installs magnetic eliminating bar (4) in the lower section of plate below (6), makes magnetic eliminating bar (4) can be relative to the horizontal shifting of rear panel (6)
It is dynamic；
Step 8, magnetization AFM probe, make its paintbrush as direct write.
4. a kind of preparation method of the nano-pattern direct-writing device of local field drives according to claim 3, feature
Be, step 1 the following steps are included:
Step 1.1 pre-processes cleaning of silicon wafer degree, then in the uniform spin coating photoresist film of silicon chip surface；
Step 1.2 carries out front baking to the silicon wafer for being coated with photoresist film that step 1.1 obtains；
Step 1.3, using the mask plate with nanometer lattice, the nanometer lattice on mask plate is copied to photoresist
On；
Step 1.4, solidification photoresist；
Nanometer lattice on mask plate is transferred to silicon chip surface, then removes photoresist by step 1.5, etching silicon wafer.
5. a kind of preparation method of the nano-pattern direct-writing device of local field drives according to claim 4, feature
It is, in step 1, it is at a high speed 1500 revs/min that photoresist spin coating low speed, which is 450 revs/min, when ultraviolet light photo-etching machine exposal
Between 7-9s, developing time 12s-15s.
6. a kind of preparation method of the nano-pattern direct-writing device of local field drives according to claim 3, feature
Be, step 2 the following steps are included:
Step 2.1, according to prepolymer and curing agent according to (10~10.5): 1 proportional arrangement PDMS takes out configured PDMS
Vacuum removes the bubble in PDMS；
The PDMS vacuumized is spin-coated on the continuous and equidimension network mother matrix made by step 2.2, carries out spin coating；
The good sample of the spin coating that step 2.3, curing schedule 2.2 obtain；
Step 2.4 strips down the PDMS film (2) with grid chamber after solidification that step 2.3 obtains, is had
The PDMS film (2) of grid chamber.
7. a kind of preparation method of the nano-pattern direct-writing device of local field drives according to claim 3, feature
Be, step 4 the following steps are included:
Configured nano-magnetic powder suspension direct write liquid (3) is poured on the PDMS film with grid chamber (2) by step 4.1, makes
Nano-magnetic powder suspension direct write liquid (3) flows into the grid chamber with the PDMS film (2) of grid chamber；
Air in step 4.2, removal grid chamber, is filled up completely nano-magnetic powder suspension direct write liquid (3) with grid chamber
PDMS film (2) grid chamber.
8. a kind of preparation method of the nano-pattern direct-writing device of local field drives according to claim 3, feature
Be, step 5 the following steps are included:
Step 5.1 prepares PDMS, is uniformly mixed according to prepolymer and curing agent according to the ratio of (10~10.5), removes PDMS
In bubble；
Step 5.2, the PDMS after vacuumizing is spin-coated on be filled up completely nano-magnetic powder suspension direct write liquid (3) have grid chamber
PDMS film (2) on；
Step 5.3, step 5.2 is obtained it is product solidified.
9. a kind of preparation method of the nano-pattern direct-writing device of local field drives according to claim 3, feature
It is, in step 7, magnetic eliminating bar (4) is mounted below rear panel (6), frame is installed outside plate (5) and rear panel (6) in front,
Scuncheon is provided with sliding rail, and magnetic eliminating bar (4) both ends are mounted in sliding rail.
10. a kind of preparation method of the nano-pattern direct-writing device of local field drives according to claim 3, feature
It is, in step 8, plating magnetosphere preparation magnetizes AFM probe on the routinely probe of tapping or contact mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910005144.9A CN109782534B (en) | 2019-01-03 | 2019-01-03 | Local magnetic field driven nanometer pattern direct writing device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910005144.9A CN109782534B (en) | 2019-01-03 | 2019-01-03 | Local magnetic field driven nanometer pattern direct writing device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109782534A true CN109782534A (en) | 2019-05-21 |
| CN109782534B CN109782534B (en) | 2020-08-28 |
Family
ID=66499968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910005144.9A Expired - Fee Related CN109782534B (en) | 2019-01-03 | 2019-01-03 | Local magnetic field driven nanometer pattern direct writing device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109782534B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246432A (en) * | 2019-07-01 | 2019-09-17 | 华南理工大学 | It is a kind of magnetic to show device and methods of exhibiting |
| CN114743755A (en) * | 2022-02-21 | 2022-07-12 | 中国科学院宁波材料技术与工程研究所 | Construction system and construction method of nano magnetic pattern |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030185967A1 (en) * | 2002-03-27 | 2003-10-02 | Eby Raymond K. | Method and apparatus for aligning patterns on a substrate |
| CN1912646A (en) * | 2006-09-01 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | MEMS micro high sensitivity magnetic field sensor and manufacturing method |
| KR20080062165A (en) * | 2006-12-29 | 2008-07-03 | 엘지디스플레이 주식회사 | Nano powder patterning method |
| CN105347299A (en) * | 2014-08-07 | 2016-02-24 | 哈尔滨工业大学 | Method for machining complicated three-dimensional micro-nano-structure through AFM probe nano-scratch |
| CN109085386A (en) * | 2018-07-12 | 2018-12-25 | 郑州大学 | A method of conjugated polymer conductive nano pattern is constructed using scanning probe |
-
2019
- 2019-01-03 CN CN201910005144.9A patent/CN109782534B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030185967A1 (en) * | 2002-03-27 | 2003-10-02 | Eby Raymond K. | Method and apparatus for aligning patterns on a substrate |
| CN1912646A (en) * | 2006-09-01 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | MEMS micro high sensitivity magnetic field sensor and manufacturing method |
| KR20080062165A (en) * | 2006-12-29 | 2008-07-03 | 엘지디스플레이 주식회사 | Nano powder patterning method |
| CN105347299A (en) * | 2014-08-07 | 2016-02-24 | 哈尔滨工业大学 | Method for machining complicated three-dimensional micro-nano-structure through AFM probe nano-scratch |
| CN109085386A (en) * | 2018-07-12 | 2018-12-25 | 郑州大学 | A method of conjugated polymer conductive nano pattern is constructed using scanning probe |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110246432A (en) * | 2019-07-01 | 2019-09-17 | 华南理工大学 | It is a kind of magnetic to show device and methods of exhibiting |
| CN114743755A (en) * | 2022-02-21 | 2022-07-12 | 中国科学院宁波材料技术与工程研究所 | Construction system and construction method of nano magnetic pattern |
| CN114743755B (en) * | 2022-02-21 | 2024-04-19 | 中国科学院宁波材料技术与工程研究所 | Construction system and construction method of nano magnetic pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109782534B (en) | 2020-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Eichelsdoerfer et al. | Large-area molecular patterning with polymer pen lithography | |
| Qin et al. | Soft lithography for micro-and nanoscale patterning | |
| US7491422B2 (en) | Direct-write nanolithography method of transporting ink with an elastomeric polymer coated nanoscopic tip to form a structure having internal hollows on a substrate | |
| US9090860B2 (en) | Process for creating shape-designed particles in a fluid | |
| CN109782534A (en) | A kind of nano-pattern direct-writing device of local field drives and preparation method thereof | |
| WO2007126689A1 (en) | Article for parallel lithography with two-dimensional pen arrays | |
| JP2010521325A (en) | Nanolithography using viewport | |
| US20110014378A1 (en) | Leveling devices and methods | |
| Xie et al. | Polymer Pen Lithography Using Dual‐Elastomer Tip Arrays | |
| Kim et al. | Enriching libraries of high-aspect-ratio micro-or nanostructures by rapid, low-cost, benchtop nanofabrication | |
| Shen et al. | Double transfer UV-curing nanoimprint lithography | |
| US9079338B2 (en) | Composite tip array for polymer pen lithography | |
| CN109865485A (en) | A kind of displacement method of small items | |
| CN102914948B (en) | Fluid handling structure, a lithographic apparatus and a device manufacturing method | |
| Guo et al. | Overpressure contact printing | |
| Cabezas et al. | Combinatorial screening of mesenchymal stem cell adhesion and differentiation using polymer pen lithography | |
| Venugopal et al. | Nanolithography | |
| JP5396425B2 (en) | Immersion system components, immersion lithographic apparatus and device manufacturing method | |
| Kandemir et al. | Polymer nanocomposite patterning by dip-pen nanolithography | |
| Haaheim et al. | Self‐leveling two‐dimensional probe arrays for Dip Pen Nanolithography® | |
| Suh et al. | Single nanocrystal arrays on patterned poly (ethylene glycol) copolymer microstructures using selective wetting and drying | |
| Ye et al. | Defect reduction for semiconductor memory applications using jet and flash imprint lithography | |
| Lee et al. | Large-area scanning probe nanolithography facilitated by automated alignment and its application to substrate fabrication for cell culture studies | |
| KR100935640B1 (en) | Method of forming hierarchical fine structure using partial curing | |
| KR20100066095A (en) | Image forming apparatus providing developer contact media formed nano roughness |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200828 |