CN109782486A - A kind of backlight display device and preparation method thereof - Google Patents
A kind of backlight display device and preparation method thereof Download PDFInfo
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Abstract
The present invention provides a kind of backlight display device and preparation method thereof, and the device includes the red quantum dot layer and Preen nono lamella stacked gradually by blue light back light.The backlight display device uses the method in conjunction with green-light nano piece film and red light quantum point, blue-ray LED plate, provides the backlight display technology for surmounting REC.2020 gamut range an of practicable, also breaches the limitation of nanometer sheet device low-light level.
Description
Technical field
The invention belongs to field of display technology, it is related to a kind of backlight display device more particularly to a kind of containing nanometer sheet
Backlight display device and preparation method thereof.
Background technique
1970, the proposition of semiconductor superlattice, Quantum Well concept started engineer, has prepared low-dimensional quantum structure
The frontier of investigation of materials.Semiconductor-quantum-point is by the Nano quantum structure of a small amount of former molecular quasi-zero dimension, and carrier exists
It all is unable to free movement by the constraint of potential barrier in three dimensions, and then shows the semiconductor material of the structure compared with other dimensions
Expect unique and superior performance, is widely used in quantum calculation, photovoltaic device, quantum luminescent device and quantum detector
In, it is one of the heat subject of present front line science research.Based on the backlight display device of colloidal semiconductor quanta point material, tool
There is solwution method prepare, be easily worked, outstanding features, such liquid crystal display device such as Color tunable, quantum yield height have moved towards
Commercialization.
Scientist in 1993 reports optical characteristics of the semiconductor nano based on size for the first time, and has studied its three-dimensional
Quantum confined effect.Followed by the extension of nanometer sheet is studied to nanorod and nanowire and in recent years.For
For semiconductor, dimension is a critically important influence factor, this is because it has electron spectrum and optical property
Extremely strong influence.And due to being accurately controlled in single dimension, nanometer sheet can show very narrow exciton absorption and
Photoluminescence spectra, this is particularly important for the display device for preparing high color purity.In recent years, in field of display technology
On, with the appearance of 4k, 8k TV, the limit of human eye is arrived on display resolution, people gradually concentrate on
On the color presentation degree of display, i.e. Wide Color Gamut (WCG).WCG is it is desirable that narrow red, green, blue line width.Amount
Therefore sub- point technology is flourished.However since quantum dot size is difficult to realize high homogeneity, spectral line width is confined to
30nm or so and be difficult to reduce.Scientists are dedicated to preferably controlling the line width that shines in recent years, can there is higher color purity materials
Research.Compared with traditional quanta point material, semiconductor nano sheet material can show preceding institute due to the accurate control of thickness
The ultra-narrow spectrum (~10nm) not having.And perovskite material more popular in recent years, although also by control dimension constriction
Spectral width, but two-dimensional sheet material is always a big difficulty, it is also difficult to achieve the effect that ultra-narrow spectrum.Compared with these materials,
Nanometer sheet embodies the narrow linewidth that other materials is unable to reach.This is extremely important not only for production light-emitting diode display part, simultaneously
It can also be applied to other a variety of devices, including laser, lighting apparatus etc..For display application, wide colour gamut is also to work as
Under extremely urgent one of demand.The planar geometry of nanometer sheet and biggish surface area are all its more important parameters.
In current report, the average transverse of cadmium selenide nano piece is probably in 20 x 20nm2, and thickness is probably in 2-6 cadmium selenide
Atomic layer.By the control for the nanometer sheet number of plies and material proportion, emission wavelength can realize that blue light arrives by accuracy controlling
The transformation of green light band.And the regulation of lateral dimension can be accurately controlled nanometer sheet emission wavelength in a certain range.With
How the continuous development of synthetic method obtains higher performance semiconductor nano sheet material and how using nanometer sheet to prepare height
The display device of optical purity has become one of important directions of nanotechnology research, prepared nanometer sheet in existing research
Display device is confined to single emission wavelength mostly, and device brightness can not effectively improve always.
Summary of the invention
In view of problems of the prior art, the present invention provides a kind of backlight display device, the backlight display device
Using the method for combining green-light nano piece film and red light quantum point, blue-ray LED plate, surmounting for a practicable is provided
The backlight display technology of REC.2020 gamut range, also breaches the limitation of nanometer sheet device low-light level.
In order to achieve the above object, the invention adopts the following technical scheme:
It is an object of the present invention to provide a kind of backlight display device, the device include by blue light back light successively
The red quantum dot layer and Preen nono lamella of stacking.
In the present invention, the sum of thickness of the red quantum dot layer and Preen nono lamella is 50~100 μm, can be according to light
The thickness proportion of the two is adjusted in the requirement in source.Wherein, the red quantum dot can be any known red quantum
Point.
As currently preferred technical solution, the raw material of the Preen nono lamella is core-shell nano sheet material.
As currently preferred technical solution, the core material of the core-shell nano sheet material include CdSe, CdTe,
Any one in CdS, ZnSe, CdTe, CuZnSe or ZnMnSe or at least two combination, the combination is typical but non-limiting
Example has: the combination of the combination of the combination of CdSe and CdTe, CdS and ZnSe, CuZnSe and ZnMnSe, CdSe, CdTe and CdS's
Combination, the combination of ZnSe, CdTe and CuInS, the combination etc. of CdSe, CdTe, CdS, ZnSe and CdTe, preferably CdSe.
As currently preferred technical solution, the shell raw material of the core-shell nano sheet material include CdS, ZnO, ZnS,
Any one in ZnSe or ZnTe or at least two combination, the combination is typical but non-limiting example has: CdS's and ZnO
Combination, the combination of ZnS and ZnSe, the combination of ZnSe and ZnTe, the combination of CdS, ZnO and ZnS, CdS, ZnO, ZnS, ZnSe and
The combination etc. of ZnTe, preferably CdS.
The second purpose of the present invention is to provide a kind of preparation methods of above-mentioned backlight display device, the preparation method is that:
Red quantum dot solution is spun on Blue backlight light source surface, annealing obtains red quantum dot layer；To core
Shell nanometer sheet material carries out ligand exchange processing, and the red quantum dot layer surface is coated on after processing, and it is aobvious to obtain the backlight
Show device.
As currently preferred technical solution, the method for the ligand exchange processing are as follows: by the core-shell nano sheet material
Material is scattered in hexane, and is further diluted in hexane and dodecyl mercaptans, by the core-shell nano sheet material after dilution
Ligand exchange is completed in dispersion liquid heat treatment.
Preferably, the temperature of the heat treatment be 50~70 DEG C, such as 50 DEG C, 52 DEG C, 55 DEG C, 58 DEG C, 60 DEG C, 62 DEG C,
65 DEG C, 68 DEG C or 70 DEG C etc., it is not limited to cited numerical value, other interior unlisted numerical value of the numberical range are equally suitable
With.
Preferably, the time of the heat treatment is 18~36h, such as 18h, 20h, for 24 hours, 28h, 32h or 36h, but simultaneously
It is not limited only to cited numerical value, other unlisted numerical value are equally applicable in the numberical range.
Preparation for green-light nano piece coating, due to the influence of nanometer sheet feature easy to reunite and solvent, film
Defect and roughness can be larger, therefore the accurate setting and the selection of solvent of parameter can be improved the quality of film.Wherein,
The concentration of nanometer sheet is critically important, is no more than 20mg/ml, concentration more denseer easier reunion.Solvent preferably low-boiling nonpolarity is molten
Agent, such as toluene, hexane, octane etc.,
Preferably, the solid for the dispersion liquid after completion ligand exchange being separated by solid-liquid separation, and being obtained before the coating
It is scattered in normal octane solution.
In the present invention, the method that core-shell nano sheet material is coated on the red quantum dot layer surface can be rotation
The methods of painting, silk-screen printing or inkjet printing.
The three of the object of the invention are to provide a kind of preparation method of CdSe/CdS nuclear shell structure nano piece, the preparation side
Method the following steps are included:
(1) cadmium salt and selenium powder are dissolved in solution, reaction are heated under the conditions of no water oxygen, and be added in temperature-rise period
Cadmium acetate is separated by solid-liquid separation obtains CdSe nanometer sheet after reaction；
(2) cadmium acetate presoma and sulphur powder precursor solution are prepared respectively, and two kinds of presomas are mixed, and are obtained
Precursor mixed solution；
(3) solution for the CdSe nanometer sheet that step (1) obtains is added into solvent, heating reaction, and in temperature-rise period
Middle injection step (2) obtains being separated by solid-liquid separation obtain the CdSe/CdS nanometer sheet after reaction to precursor mixed solution.
In the present invention, select CdSe/CdS nanometer sheet the reason of be its with CdSe nanometer sheet compared with yield height, stability
Height, the half-peak width compared with perovskite nanometer sheet, stability are high.
As currently preferred technical solution, step (1) cadmium salt is myristyl acid cadmium.
In the present invention, the myristyl acid cadmium can be prepared by myristyl acid sodium and nitric acid cadmium reaction.
Preferably, step (1) solvent is ODE.
Preferably, the mass ratio of step (1) cadmium salt and selenium powder is (15~20): 1, such as 15:1,16:1,17:1,18:
1,19:1 or 20:1 etc., it is not limited to cited numerical value, other interior unlisted numerical value of the numberical range are equally applicable.
Preferably, the temperature of step (1) the heating reaction is 200~300 DEG C, such as 210 DEG C, 220 DEG C, 230 DEG C, 240
DEG C, 250 DEG C, 260 DEG C, 270 DEG C, 280 DEG C, 290 DEG C or 300 DEG C etc., it is not limited to cited numerical value, the numberical range
Other interior unlisted numerical value are equally applicable.
Preferably, step (1) it is described heating reaction reaction time be 5~15min, as 5min, 6min, 7min, 8min,
9min, 10min, 11min, 12min, 13min, 14min or 15min etc., it is not limited to cited numerical value, the numerical value model
Other unlisted numerical value are equally applicable in enclosing.
Preferably, step (1) cadmium acetate that is added in temperature-rise period is that vinegar is added when being warming up to 190~200 DEG C
Sour cadmium, the temperature can be 190 DEG C, 191 DEG C, 192 DEG C, 193 DEG C, 194 DEG C, 195 DEG C, 196 DEG C, 197 DEG C, 198 DEG C, 199
DEG C or 200 DEG C etc., it is not limited to cited numerical value, other unlisted numerical value are equally applicable in the numberical range.
Preferably, the mass ratio of the cadmium acetate and cadmium salt is 1:(4~5), such as 1:4,1:4.1,1:4.2,1:4.3,1:
4.4,1:4.5,1:4.6,1:4.7,1:4.8,1:4.9 or 1:5 etc., it is not limited to cited numerical value, the numberical range
Other interior unlisted numerical value are equally applicable.
As currently preferred technical solution, the preparation method of step (2) the cadmium acetate precursor solution is by vinegar
Sour cadmium is dissolved in the in the mixed solvent of ODE and oleic acid.
Preferably, the volume ratio of the ODE and oleic acid be (5~6): 1, as 5:1,5.1:1,5.2:1,5.3:1,5.4:1,
5.5:1,5.6:1,5.7:1,5.8:1,5.9:1 or 6:1 etc., it is not limited to cited numerical value, in the numberical range its
His unlisted numerical value is equally applicable.
Preferably, solid-to-liquid ratio is (200~300): 1mg/mL in step (2) the cadmium acetate precursor solution, such as 200:
1,210:1,220:1,230:1,240:1,250:1,260:1,270:1,280:1,290:1 or 300:1 etc., it is not limited to
Cited numerical value, other interior unlisted numerical value of the numberical range are equally applicable.
Preferably, the preparation method of step (2) the sulphur powder presoma is that sulphur powder is dissolved in ODE.
Preferably, in step (2) the sulphur powder precursor solution solid-to-liquid ratio be (3~5): 1mg/mL, as 3:1,3.2:1,
3.5:1,3.8:1,4:1,4.2:1,4.5:1,4.8:1 or 5:1 etc., it is not limited to cited numerical value, the numberical range
Other interior unlisted numerical value are equally applicable.
Preferably, cadmium acetate and the mass ratio of sulphur powder are (40~45) in step (2) described precursor mixed solution: 1, such as
40:1,41:1,42:1,43:1,44:1 or 45:1 etc., it is not limited to cited numerical value, in the numberical range, other are not
The numerical value enumerated is equally applicable.
As currently preferred technical solution, the solid-to-liquid ratio of the solution of step (3) the CdSe nanometer sheet be (3~
30): 1,3:1,5:1,10:1,15:1,20:1,25:1 or 30:1 etc., it is not limited to cited numerical value, the numberical range
Other interior unlisted numerical value are equally applicable.
Preferably, the volume ratio of the solution and solvent of step (3) the CdSe nanometer sheet is 1:(5~6), such as 1:5,1:
5.1,1:5.2,1:5.3,1:5.4,1:5.5,1:5.6,1:5.7,1:5.8,1:5.9 or 1:6 etc., it is not limited to cited
Numerical value, other unlisted numerical value are equally applicable in the numberical range.
Preferably, the temperature of step (3) the heating reaction is 200~300 DEG C, such as 210 DEG C, 220 DEG C, 230 DEG C, 240
DEG C, 250 DEG C, 260 DEG C, 270 DEG C, 280 DEG C, 290 DEG C or 300 DEG C etc., it is not limited to cited numerical value, the numberical range
Other interior unlisted numerical value are equally applicable.
Preferably, step (3) it is described heating reaction time be 2~10min, as 2min, 3min, 4min, 5min,
6min, 7min, 8min, 9min or 10min etc., it is not limited to cited numerical value, other are unlisted in the numberical range
Numerical value it is equally applicable.
Preferably, step (3) injection step (2) in temperature-rise period obtain and to precursor mixed solution be warming up to
Injection step (2) is obtained to precursor mixed solution at 190~195 DEG C, and the temperature can be 190 DEG C, 191 DEG C, 192
DEG C, 193 DEG C, 194 DEG C or 195 DEG C etc., it is not limited to cited numerical value, other unlisted numerical value in the numberical range
It is equally applicable.
Preferably, step (3) step (2) obtain and to the charge velocity of precursor mixed solution be 5~10ml/h,
Such as 5ml/h, 6ml/h, 7ml/h, 8ml/h, 9ml/h or 10ml/h, it is not limited to cited numerical value, the numberical range
Other interior unlisted numerical value are equally applicable.
Preferably, the volume ratio of the solution of step (3) the CdSe nanometer sheet and the precursor mixed solution is 1:(1
~2), such as 1:1,1:1.1,1:1.2,1:1.3,1:1.4,1:1.5,1:1.6,1:1.7,1:1.8,1:1.9 or 1:2, but simultaneously
It is not limited only to cited numerical value, other unlisted numerical value are equally applicable in the numberical range.
Preparation for nanometer sheet material, traditional chemical synthesis process cannot achieve nanometer sheet high quantum production rate always,
Lower than the quantum yield of the quantum dot of technical maturity.The accurate control of reactant mesh number and quantity can be improved in this method
This problem.Wherein, the mesh number variation of Se can change quantum yield, and mesh number is about high, and yield is about high.
In the present invention, the synthesis of CdSe nanometer sheet increases the additional amount of selenium powder to increase a nanometer chip size in step (1), increases
Selenium powder mesh number is added to increase nanometer sheet length-width ratio.
In the present invention, the synthesis of CdSe nanometer sheet can increase nanometer by increasing the additional amount of cadmium acetate in step (1)
Piece thickness.
Preferably, dosage (0.7- is added by change presoma in the synthesis of CdS Shell Materials in nanometer sheet in step (1)
1.4ml) the canopy thickness of control cladding, the presoma addition metering is more, and canopy thickness is thicker.
As currently preferred technical solution, the preparation method of the CdSe/CdS nuclear shell structure nano piece includes following
Step:
(1) myristyl acid cadmium and selenium powder are dissolved in ODE, the mass ratio of cadmium salt and selenium powder is (15~20): 1,
200~300 DEG C of heating reactions under the conditions of no water oxygen, and cadmium acetate, cadmium acetate and cadmium salt are added when being warming up to 190~200 DEG C
Mass ratio be 1:(4~5), after reaction be separated by solid-liquid separation obtain CdSe nanometer sheet；
(2) in the mixed solvent that cadmium acetate is dissolved in ODE and oleic acid is obtained into cadmium acetate precursor solution, cadmium acetate forerunner
Solid-to-liquid ratio is (200~300) in liquid solution: sulphur powder is dissolved in ODE and obtains sulphur powder precursor solution by 1mg/mL, before sulphur powder
Driving solid-to-liquid ratio in liquid solution is (3~5): 1mg/mL, and two kinds of presomas are mixed, and obtains precursor mixed solution, preceding
Driving cadmium acetate and the mass ratio of sulphur powder in body mixed solution is (40~45): 1；
(3) solution for the CdSe nanometer sheet that step (1) obtains is added into solvent, the solution of the CdSe nanometer sheet with
The volume ratio of solvent is 1:(5~6), 2~10min is reacted in 200~300 DEG C of heating, is the injection when being warming up to 190~195 DEG C
Step (2) is obtained to precursor mixed solution, and the charge velocity of precursor mixed solution is 5~10ml/h, and the CdSe receives
The solution of rice piece and the volume ratio of the precursor mixed solution are 1:(1~2), it is separated by solid-liquid separation described in obtaining after reaction
CdSe/CdS nanometer sheet.
The present invention needs the validity for determining nuclear cap structure cladding after CdSe/CdS nuclear shell structure nano piece is prepared: comparing
Pattern and optical property of the nanometer sheet before and after canopy cladding, determine whether the cladding of canopy is effective, the direction of growth of canopy.Tool
Body identification method includes: whether the luminous of quantum dot enhances, and whether luminous peak position moves；Whether half-peak breadth changes；
Compare the absorption of nanometer sheet and luminous under low temperature determines energy band；By Caloric test observe the luminous intensity of nanometer sheet with
Peak position variation；The stability of nanometer sheet is judged by senile experiment.
Wherein, the method for nanometer sheet relevant characterization test includes: to analyze sample using high-resolution transmission microscopy (HR-TEM)
The structure of product；Utilize the crystalline quality of X-ray diffraction (XRD) characterization sample；Utilize the room temperature of photoluminescence spectra test sample
The characteristics of luminescence.The quality of CdSe/CdS nanometer sheet is characterized, and provides feedback information for chemical solution material growth method, is obtained with it
Quality, size and the controllable high quality nanometer sheet of size distribution.
Compared with prior art, the present invention is at least had the advantages that
(1) present invention uses semiconductor nano piece that can have as the method for green light luminescent material production backlight display device
Effect solves the problems, such as that traditional backlight shows the low optical purity of equipment；
(2) use of nanometer sheet of the present invention effectively increases device light emitting efficiency and brightness, is improving backlight display colour purity
On the basis of degree, there is no lose luminous efficiency；
(3) present invention has selected green quantum piece and red light fluorescent powder or quantum dot, in addition the side of the combination of blue light LEG plate
Method can successfully realize the backlight display device of the wide colour gamut of high color purity.
Detailed description of the invention
Fig. 1 is the tem analysis figure that CdSe/CdS core-shell nano piece is prepared in the embodiment of the present invention 1；
Fig. 2 is the PL analysis chart that CdSe/CdS core-shell nano piece is prepared in the embodiment of the present invention 1；
Fig. 3 is the spectrogram that display module is prepared in the embodiment of the present invention 4；
Fig. 4 is the gamut map that display module is prepared in the embodiment of the present invention 4；
Fig. 5 is the structural schematic diagram of backlight display device provided by the invention.
The present invention is described in more detail below.But following examples is only simple example of the invention, not generation
Table or limitation the scope of the present invention, protection scope of the present invention are subject to claims.
Specific embodiment
In order to better illustrate the present invention, it is easy to understand technical solution of the present invention, of the invention is typical but non-limiting
Embodiment is as follows:
Embodiment 1
The present invention provides a kind of preparation method of CdSe/CdS nuclear shell structure nano piece, and the preparation method includes following step
It is rapid:
(1) the myristyl acid cadmium dust and 20mg selenium powder for taking 340mg to prepare in advance are dissolved in ODE, are taken out at 95 DEG C true
Empty certain time excludes the water oxygen impurity in reaction system, and reaction system is then warming up to 240 DEG C.In temperature-rise period
CdSe nucleation, and in 195 DEG C of addition 70mg acetic acid cadmium dusts, inhibit the longitudinal growth of nucleus, by the addition of acetate with shape
Slabbing pattern.The solution 5000rpm prepared is finally centrifuged 10min, obtained solid is CdSe nanometer sheet；
(2) 480mg cadmium acetate is dissolved in 2mL ODE respectively, be dissolved in 3mlODE with 11mg sulphur powder in 340uL oleic acid, made
It is mixed again at presoma；
(3) the close 1mL CdSe nanometer sheet solution for being 1 in 350nm of light is added in 5mlODE and 100uL oleic acid, at 80 DEG C
Under vacuumize 30 minutes to exclude the impurity in reaction system, reaction system is then warming up to 240 DEG C, and open at 195 DEG C
Begin that 1.4ml precursor mixed solution is added with 7mL/h using syringe pump.Then heating 5 minutes in 240 DEG C of holdings has reacted it
Entirely.The solution 5000rpm prepared is finally centrifuged 10min, obtained solid is CdSe/CdS nuclear shell structure nano piece.
The pattern for the CdSe/CdS nuclear shell structure nano piece that the present embodiment is prepared is characterized, and TEM schemes such as Fig. 1 institute
Show.
Embodiment 2
The present invention provides a kind of preparation method of CdSe/CdS nuclear shell structure nano piece, and the preparation method includes following step
It is rapid:
(1) the myristyl acid cadmium dust and 20mg selenium powder for taking 300mg to prepare in advance are dissolved in ODE, are taken out at 95 DEG C true
Empty certain time excludes the water oxygen impurity in reaction system, and reaction system is then warming up to 200 DEG C.In temperature-rise period
CdSe nucleus, and in 190 DEG C of addition 75mg acetic acid cadmium dusts, inhibit the longitudinal growth of nucleus, by the addition of acetate with shape
Slabbing pattern.The solution 5000rpm prepared is finally centrifuged 10min, obtained solid is CdSe nanometer sheet；
(2) 480mg cadmium acetate is dissolved in 2mL ODE respectively, be dissolved in 4mL ODE with 12mg sulphur powder in 400 μ L oleic acid,
Presoma is made to be mixed again；
(3) the close 1mL CdSe nanometer sheet solution for being 1 in 350nm of light is added in 4.9mL ODE and 100 μ L oleic acid,
30 minutes are vacuumized at 80 DEG C to exclude the impurity in reaction system, reaction system are then warming up to 200 DEG C, and at 195 DEG C
Under begin to use syringe pump with 5mL/h be added 1mL precursor mixed solution.Then make its reaction in 200 DEG C of holding heating 10min
Completely.The solution 5000rpm prepared is finally centrifuged 10min, obtained solid is CdSe/CdS nuclear shell structure nano piece.
Embodiment 3
The present invention provides a kind of preparation method of CdSe/CdS nuclear shell structure nano piece, and the preparation method includes following step
It is rapid:
(1) the myristyl acid cadmium dust and 20mg selenium powder for taking 400mg to prepare in advance are dissolved in ODE, are taken out at 95 DEG C true
Empty certain time excludes the water oxygen impurity in reaction system, and reaction system is then warming up to 300 DEG C.In temperature-rise period
CdSe nucleus, and in 200 DEG C of addition 80mg acetic acid cadmium dusts, inhibit the longitudinal growth of nucleus, by the addition of acetate with shape
Slabbing pattern.The solution 5000rpm prepared is finally centrifuged 10min, obtained solid is CdSe nanometer sheet；
(2) 840mg cadmium acetate is dissolved in 2.4mL ODE respectively, in 400 μ L oleic acid and 18.7mg sulphur powder is dissolved in 3.7mL
In ODE, presoma is made and is mixed again；
(3) the close 1.4mL CdSe nanometer sheet solution for being 1 in 350nm of light is added in 8mL ODE and 400 μ L oleic acid,
30 minutes are vacuumized at 80 DEG C to exclude the impurity in reaction system, reaction system are then warming up to 300 DEG C, and at 190 DEG C
Under begin to use syringe pump with 10mL/h be added 0.7mL precursor mixed solution.Then keep it anti-in 300 DEG C of holding heating 2min
It should be complete.The solution 5000rpm prepared is finally centrifuged 10min, obtained solid is CdSe/CdS nuclear shell structure nano
Piece.
Embodiment 4
The CdSe/CdS nuclear shell structure nano piece for selecting embodiment 1 to be prepared in this implementation is as Preen nono lamella
Raw material prepares backlight display device, preparation method are as follows:
CdSe/ZnS red quantum dot solution is spun on blue led plate, with the spin speed spin coating 60s of 1000rpm,
CdSe/ZnS solution concentration is 50mg/mL, and subsequent 80 DEG C of annealing 2min forms the film coating of 100nm thickness；By Preen nono piece
Carry out ligand exchange processing.The nanometer sheet of 400 μ L in hexane is further diluted in 2mL hexane and 200 μ L dodecyl mercaptans.
Mixture is then heated to 24 hours at 65 DEG C to complete complete ligand exchange；Preen nono piece solution is carried out at centrifugation
Reason, and be redissolved in normal octane solvent, it is then spun in the film-substrate of previous step formation, with the spin coating of 1000rpm
Speed spin coating 60s, the concentration of the normal octane solution of Preen nono piece are 50mg/mL, and it is thick that subsequent 50 DEG C of annealing 2min form 80nm
Film coating.
Embodiment 5
The CdSe/CdS nuclear shell structure nano piece for selecting embodiment 2 to be prepared in this implementation is as Preen nono lamella
Raw material prepares backlight display device, preparation method are as follows:
CdSe/ZnS red quantum dot solution is spun on blue led plate, with the spin speed spin coating 20s of 3000rpm,
CdSe/ZnS solution concentration is 10mg/mL, and subsequent 50 DEG C of annealing 5min forms the film coating of 30nm thickness；By Preen nono piece into
The processing of row ligand exchange.The nanometer sheet of 400 μ L in hexane is further diluted in 2mL hexane and 200 μ L dodecyl mercaptans.With
Mixture is heated to 18 hours at 70 DEG C afterwards to complete complete ligand exchange；Preen nono piece solution is carried out at centrifugation
Reason, and be redissolved in normal octane solvent, it is then spun in the film-substrate of previous step formation with the spin coating of 3000rpm
Speed spin coating 20s, the concentration of the normal octane solution of Preen nono piece are 10mg/mL, and it is thick that subsequent 30 DEG C of annealing 2min form 30nm
Film coating.
Embodiment 6
The CdSe/CdS nuclear shell structure nano piece for selecting embodiment 3 to be prepared in this implementation is as Preen nono lamella
Raw material prepares backlight display device, preparation method are as follows:
Red quantum dot solution is spun on blue led plate, molten with spin speed the spin coating 40s, CdSe/ZnS of 2000rpm
Liquid concentration is 30mg/mL, and subsequent 90 DEG C of annealing 3min forms the film coating of 50nm thickness；Preen nono piece is subjected to ligand exchange
Processing.The nanometer sheet of 400 μ L in hexane is further diluted in 2mL hexane and 200 μ L dodecyl mercaptans.Then by mixture
36 hours are heated at 50 DEG C to complete complete ligand exchange；Preen nono piece solution is subjected to centrifugal treating, and again molten
Solution is then spun in the film-substrate of previous step formation in normal octane solvent, and the spin speed spin coating 40s of 2000rpm is green
The concentration of the normal octane solution of color nanometer sheet is 30mg/mL, and subsequent 40 DEG C of annealing 1.5min forms the film coating of 60nm thickness.
The Preen nono piece film that embodiment 4-6 is prepared is high with the quantum yield of red quantum dot film, wavelength and half
It is wide as shown in table 1.
Table 1
| Quantum yield | Wavelength | Halfwidth | |
| Preen nono piece film | 45% | 520nm | 18nm |
| Red quantum dot film | 77% | 630nm | 30nm |
Backlight device structure of the invention is as shown in figure 5, pass through the spectroscopic data of Fig. 3 it is found that backlight is by RGB three primary colours group
At wavelength is respectively 630,525 and 450nm, wavelength halfwidth are as follows: 30,18 and 19nm, compared to traditional YGA fluorescence
Powder is red green with good monochromaticjty.Gamut map as shown in Figure 4 is calculated by spectroscopic data, gamut range can reach
140%NTSC, it is wider than REC.2020 gamut range by 104.5%.
The Applicant declares that the present invention is explained by the above embodiments detailed construction feature of the invention, but the present invention is simultaneously
It is not limited to above-mentioned detailed construction feature, that is, does not mean that the present invention must rely on above-mentioned detailed construction feature and could implement.Institute
Belong to those skilled in the art it will be clearly understood that any improvement in the present invention, to the equivalence replacement of component selected by the present invention
And increase, selection of concrete mode of accessory etc., all of which fall within the scope of protection and disclosure of the present invention.
The preferred embodiment of the present invention has been described above in detail, still, during present invention is not limited to the embodiments described above
Detail within the scope of the technical concept of the present invention can be with various simple variants of the technical solution of the present invention are made, this
A little simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, can be combined in any appropriate way, in order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (10)
1. a kind of backlight display device, which is characterized in that the device includes the amount of red stacked gradually by blue light back light
Son point layer and Preen nono lamella.
2. display device according to claim 1, which is characterized in that the raw material of the Preen nono lamella is core-shell nano
Sheet material.
3. display device according to claim 1 or 2, which is characterized in that the core material of the core-shell nano sheet material
Combination including any one in CdSe, CdTe, CdS, ZnSe, CdTe, CuZnSe or ZnMnSe or at least two, preferably
CdSe；
Preferably, the shell raw material of the core-shell nano sheet material include any one in CdS, ZnO, ZnS, ZnSe or ZnTe or
At least two combination, preferably CdS.
4. a kind of preparation method of the described in any item backlight display devices of claim 1-3, which is characterized in that the preparation side
Method are as follows:
Red quantum dot solution is spun on Blue backlight light source surface, annealing obtains red quantum dot layer；Nucleocapsid is received
Rice sheet material carries out ligand exchange processing, and the red quantum dot layer surface is coated on after processing, obtains the backlit display
Part.
5. the preparation method according to claim 4, which is characterized in that the method for the ligand exchange processing are as follows: will be described
Core-shell nano sheet material is scattered in hexane, and is further diluted in hexane and dodecyl mercaptans, by the core after dilution
Ligand exchange is completed in the heat treatment of shell nanometer sheet material dispersion liquid；
Preferably, the temperature of the heat treatment is 50~70 DEG C；
Preferably, the time of the heat treatment is 18~36h；
Preferably, the dispersion liquid after completion ligand exchange is separated by solid-liquid separation before the coating, and obtained solid is dispersed
In normal octane solution.
6. a kind of preparation method of CdSe/CdS nanometer sheet as claimed in claim 3, which is characterized in that the preparation method includes
Following steps:
(1) cadmium salt and selenium powder are dissolved in solution, reaction are heated under the conditions of no water oxygen, and acetic acid is added in temperature-rise period
Cadmium is separated by solid-liquid separation obtains CdSe nanometer sheet after reaction；
(2) cadmium acetate presoma and sulphur powder precursor solution are prepared respectively, and two kinds of presomas are mixed, and obtain forerunner
Body mixed solution；
(3) solution for the CdSe nanometer sheet that step (1) obtains is added into solvent, heating reaction, and is infused in temperature-rise period
Enter step (2) to obtain that precursor mixed solution is separated by solid-liquid separation obtains the CdSe/CdS nanometer sheet after reaction.
7. preparation method according to claim 6, which is characterized in that step (1) cadmium salt is myristyl acid cadmium；
Preferably, step (1) solvent is ODE；
Preferably, the mass ratio of step (1) cadmium salt and selenium powder is (15~20): 1；
Preferably, the temperature of step (1) the heating reaction is 200~300 DEG C；
Preferably, the reaction time of step (1) the heating reaction is 5~15min；
Preferably, step (1) cadmium acetate that is added in temperature-rise period is that cadmium acetate is added when being warming up to 190~200 DEG C；
Preferably, the mass ratio of the cadmium acetate and cadmium salt is 1:(4~5).
8. preparation method according to claim 6 or 7, which is characterized in that step (2) the cadmium acetate precursor solution
Preparation method is that cadmium acetate is dissolved in the in the mixed solvent of ODE and oleic acid；
Preferably, the volume ratio of the ODE and oleic acid is (5~6): 1；
Preferably, solid-to-liquid ratio is (200~300): 1mg/mL in step (2) the cadmium acetate precursor solution；
Preferably, the preparation method of step (2) the sulphur powder presoma is that sulphur powder is dissolved in ODE；
Preferably, solid-to-liquid ratio is (3~5): 1mg/mL in step (2) the sulphur powder precursor solution；
Preferably, cadmium acetate and the mass ratio of sulphur powder are (40~45) in step (2) described precursor mixed solution: 1.
9. according to the described in any item preparation methods of claim 6-8, which is characterized in that step (3) the CdSe nanometer sheet
The solid-to-liquid ratio of solution is (3~30): 1；
Preferably, the volume ratio of the solution and solvent of step (3) the CdSe nanometer sheet is 1:(5~6)；
Preferably, the temperature of step (3) the heating reaction is 200~300 DEG C；
Preferably, the time of step (3) the heating reaction is 2~10min；
Preferably, step (3) injection step (2) in temperature-rise period obtain and to precursor mixed solution be warming up to 190
Injection step (2) obtains and to precursor mixed solution at~195 DEG C；
Preferably, step (3) step (2) obtain and to the charge velocity of precursor mixed solution be 5~10mL/h；
Preferably, the volume ratio of the solution of step (3) the CdSe nanometer sheet and the precursor mixed solution is 1:(1~2).
10. according to the described in any item preparation methods of claim 6-9, which is characterized in that the preparation method includes following step
It is rapid:
(1) myristyl acid cadmium and selenium powder are dissolved in ODE, the mass ratio of cadmium salt and selenium powder is (15~20): 1, anhydrous
200~300 DEG C of heating reactions under the conditions of oxygen, and cadmium acetate is added when being warming up to 190~200 DEG C, the matter of cadmium acetate and cadmium salt
Amount is than being 1:(4~5), it is separated by solid-liquid separation obtains CdSe nanometer sheet after reaction；
(2) in the mixed solvent that cadmium acetate is dissolved in ODE and oleic acid is obtained into cadmium acetate precursor solution, cadmium acetate presoma is molten
Solid-to-liquid ratio is (200~300) in liquid: sulphur powder is dissolved in ODE and obtains sulphur powder precursor solution by 1mg/mL, sulphur powder presoma
Solid-to-liquid ratio is (3~5): 1mg/mL in solution, and two kinds of presomas are mixed, and obtains precursor mixed solution, presoma
Cadmium acetate and the mass ratio of sulphur powder are (40~45) in mixed solution: 1；
(3) solution for the CdSe nanometer sheet that step (1) obtains is added into solvent, the solution and solvent of the CdSe nanometer sheet
Volume ratio be 1:(5~6), 2~10min are reacted in 200~300 DEG C of heating, are the injection step when being warming up to 190~195 DEG C
(2) it obtains to precursor mixed solution, the charge velocity of precursor mixed solution is 5~10ml/h, the CdSe nanometer sheet
Solution and the precursor mixed solution volume ratio be 1:(1~2), after reaction be separated by solid-liquid separation obtain the CdSe/
CdS nanometer sheet.
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