CN109777966A - A method of vacuum distillation separating indium copper alloy - Google Patents

A method of vacuum distillation separating indium copper alloy Download PDF

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Publication number
CN109777966A
CN109777966A CN201910158662.4A CN201910158662A CN109777966A CN 109777966 A CN109777966 A CN 109777966A CN 201910158662 A CN201910158662 A CN 201910158662A CN 109777966 A CN109777966 A CN 109777966A
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indium
copper alloy
copper
mixture
sulfide
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CN109777966B (en
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邓勇
杨斌
徐宝强
杨佳
陈思峰
郁青春
王飞
田阳
张锋
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Kunming University of Science and Technology
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Kunming University of Science and Technology
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

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Abstract

The present invention relates to a kind of methods that separating indium copper alloy is evaporated in vacuo, and belong to metallurgical technology field.Indium copper alloy is heated to fusing point or more by the present invention, and addition vulcanizing agent, which is uniformly mixed, obtains mixture A;Under vacuum conditions, mixture A is at the uniform velocity warming up to temperature is that 30 ~ 60min of distillation separation obtains gas phase and liquid phase at 600 ~ 900 DEG C, and gas phase is the sulfide of indium and the mixture of indium metal, and copper segregation is in condensate liquid phase.The present invention is of different sizes according to the affinity of metallic copper, indium and sulphur and indium sulfide is different with the saturated vapour pressure of copper sulfide, and indium metal forms the sulfide of indium and indium metal is volatized into volatile matter, and copper segregation realizes the separation of indium metal and copper in condensate.

Description

A method of vacuum distillation separating indium copper alloy
Technical field
The present invention relates to a kind of methods that separating indium copper alloy is evaporated in vacuo, and belong to metallurgical technology field.
Background technique
Indium is the more expensive dissipated metal of price, and silvery white gloss is presented in indium metal, with the low spy of fusing point higher boiling Point, and indium metal has the advantages that good ductility, low resistance, plasticity is strong, has good smooth permeability and conduction Property, it is therefore widely used in science and techniques of defence, wireless telecommunications, the fields such as space flight and aviation, new and high technology.
The impurity element for mainly including in indium metal has Pb, Cd, Tl, Zn, Sn, Cu, Ni etc., in the purification process of indium metal In, mainly remove the above impurity element.In general, vacuum distillation technique separating indium and copper, need 1000 DEG C of temperature with Upper temperature just can be achieved.
Summary of the invention
In view of the problems of the existing technology the present invention, provides a kind of method that separating indium copper alloy is evaporated in vacuo, this hair The bright affinity according to metallic copper, indium and sulphur is of different sizes and indium sulfide is different with the saturated vapour pressure of copper sulfide, indium metal It forms the sulfide of indium and is volatized into volatile matter, copper segregation realizes the separation of indium metal and copper in condensate.
A method of vacuum distillation separating indium copper alloy, the specific steps are as follows:
(1) indium copper alloy is heated to fusing point or more, addition vulcanizing agent, which is uniformly mixed, obtains mixture A;
(2) under vacuum conditions, by the mixture A of step (1) be at the uniform velocity warming up to temperature be 600 ~ 900 DEG C at distillation separation 30 ~ 60min obtains gas phase and liquid phase, and gas phase is the sulfide of indium and the mixture of indium metal, and copper segregation is in condensate liquid phase.
It is calculated in mass percent, indium 10%~99% is contained in the indium copper alloy, remaining is copper.
The vacuum degree is 5~20Pa.
The molar ratio of sulphur and indium in indium copper alloy is (1 ~ 1.2) in the vulcanizing agent: 1.
The vulcanizing agent is elemental sulfur or sulfide.
The beneficial effects of the present invention are:
The present invention according to the affinity of metallic copper, indium and sulphur is of different sizes and the saturated vapour pressure of indium sulfide and copper sulfide not It together, can be in 600 ~ 900 DEG C of next footworks of low temperature by the indium and copper of indium copper alloy using the method for vacuum distillation separating indium copper alloy It is completely separated.
Specific embodiment
Invention is further described in detail With reference to embodiment, but protection scope of the present invention and unlimited In the content.
Embodiment 1: a method of vacuum distillation separating indium copper alloy, the specific steps are as follows:
(1) indium copper alloy is heated to fusing point or more, addition vulcanizing agent (elemental sulfur) is uniformly mixed and obtains mixture A;Wherein indium Contain indium 90% in copper alloy, remaining is copper;The molar ratio of indium is 1.2:1 in sulphur and indium copper alloy;
(2) under vacuum conditions, wherein vacuum degree is 5Pa, and it is at 600 DEG C that the mixture A of step (1), which is at the uniform velocity warming up to temperature, Distillation separation 60min obtains gas phase and liquid phase, and gas phase is the mixture of indium metal and indium sulfide, and copper segregation is in condensate liquid phase In;Through detecting, the component of gas phase is only the mixture of indium metal Yu indium sulfide.
Embodiment 2: a method of vacuum distillation separating indium copper alloy, the specific steps are as follows:
(1) indium copper alloy is heated to fusing point or more, addition vulcanizing agent (elemental sulfur) is uniformly mixed and obtains mixture A;Wherein indium Contain indium 10% in copper alloy, remaining is copper;The molar ratio of indium is 1:1 in sulphur and indium copper alloy;
(2) under vacuum conditions, wherein vacuum degree is 10Pa, and it is 800 DEG C that the mixture A of step (1), which is at the uniform velocity warming up to temperature, Lower distillation separation 40min obtains gas phase and liquid phase, and gas phase is the mixture of indium metal and indium sulfide, and copper segregation is in condensation thing liquid Xiang Zhong;Through detecting, the component of gas phase is only the mixture of indium metal Yu indium sulfide.
Embodiment 3: a method of vacuum distillation separating indium copper alloy, the specific steps are as follows:
(1) indium copper alloy is heated to fusing point or more, addition vulcanizing agent (elemental sulfur) is uniformly mixed and obtains mixture A;Wherein indium Contain indium 60% in copper alloy, remaining is copper;The molar ratio of indium is 1.1:1 in sulphur and indium copper alloy;
(2) under vacuum conditions, wherein vacuum degree is 15Pa, and it is 900 DEG C that the mixture A of step (1), which is at the uniform velocity warming up to temperature, Lower distillation separation 30min obtains gas phase and liquid phase, and gas phase is the mixture of indium metal and indium sulfide, and copper segregation is in condensation thing liquid Xiang Zhong;Through detecting, the component of gas phase is only the mixture of indium metal Yu indium sulfide.
It is that the embodiment of the present invention is explained in detail, but the present invention is not limited to above-mentioned embodiment party above Formula can also be made without departing from the purpose of the present invention within the knowledge of a person skilled in the art Various change out.

Claims (5)

1. a kind of method that separating indium copper alloy is evaporated in vacuo, which is characterized in that specific step is as follows:
(1) indium copper alloy is heated to fusing point or more, addition vulcanizing agent, which is uniformly mixed, obtains mixture A;
(2) under vacuum conditions, by the mixture A of step (1) be at the uniform velocity warming up to temperature be 600 ~ 900 DEG C at distillation separation 30 ~ 60min obtains gas phase and liquid phase, and gas phase is the sulfide of indium and the mixture of indium metal, and copper segregation is in condensate liquid phase.
2. the method for separating indium copper alloy is evaporated in vacuo according to claim 1, it is characterised in that: it is calculated in mass percent, Contain indium 10%~99% in indium copper alloy, remaining is copper.
3. the method for separating indium copper alloy is evaporated in vacuo according to claim 1, it is characterised in that: vacuum degree is 5~20Pa.
4. the method for separating indium copper alloy is evaporated in vacuo according to claim 1, it is characterised in that: sulphur and indium copper in vulcanizing agent The molar ratio of indium is (1 ~ 1.2) in alloy: 1.
5. the method for separating indium copper alloy is evaporated in vacuo according to claim 1, it is characterised in that: vulcanizing agent is elemental sulfur.
CN201910158662.4A 2019-03-04 2019-03-04 Method for separating indium-copper alloy by vacuum distillation Active CN109777966B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020130041A1 (en) * 2001-03-13 2002-09-19 Jyh-Chung Wen Method of regenerating a phase-change sputtering target for optical storage media
CN106119561A (en) * 2016-06-29 2016-11-16 昆明理工大学 A kind of method of vacuum distilling multi-stage condensing purifying crude indium
CN107557585A (en) * 2017-09-07 2018-01-09 昆明鼎邦科技股份有限公司 A kind of method of gold-tin alloy separation
CN108754435A (en) * 2018-06-15 2018-11-06 汉能新材料科技有限公司 A kind of recovery method of copper indium gallium selenide waste material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020130041A1 (en) * 2001-03-13 2002-09-19 Jyh-Chung Wen Method of regenerating a phase-change sputtering target for optical storage media
CN106119561A (en) * 2016-06-29 2016-11-16 昆明理工大学 A kind of method of vacuum distilling multi-stage condensing purifying crude indium
CN107557585A (en) * 2017-09-07 2018-01-09 昆明鼎邦科技股份有限公司 A kind of method of gold-tin alloy separation
CN108754435A (en) * 2018-06-15 2018-11-06 汉能新材料科技有限公司 A kind of recovery method of copper indium gallium selenide waste material

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