CN109773525A - A kind of processing method based on metal class thin-walled fin structure - Google Patents
A kind of processing method based on metal class thin-walled fin structure Download PDFInfo
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- CN109773525A CN109773525A CN201811568492.9A CN201811568492A CN109773525A CN 109773525 A CN109773525 A CN 109773525A CN 201811568492 A CN201811568492 A CN 201811568492A CN 109773525 A CN109773525 A CN 109773525A
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- fin structure
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- walled fin
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Abstract
A kind of processing method based on metal class thin-walled fin structure, can solve the technical issues of existing processing method is easy to cause fin structure to deform.Include: S100, metal class thin-walled fin structure to be processed is placed on normal temperature environment；S200, appropriate crystalline compounds are taken and make its liquefaction, then the compound injection metal thin-wall fin structure after liquefaction is needed in the inner hole at processing, and is blocked with metal tape；S300, solid crystals are frozen into the liquefied compound in metal class thin-walled fin structure inner hole；S400, on metal class thin-walled fin structure, carry out the processing of various mounting structures according to demand；S500, complete processing after, by the metal class thin-walled fin structure after processing be put into hot water cleaning, incorporate the solid crystals compound in thin-walled fin structure inner hole thoroughly in water, remove the metal tape of bottom end, and dry up.Method of the invention is not only easy to use, at low cost, influences on metal thin-wall fin structure very little.
Description
Technical field
The present invention relates to the processing method technical fields of fin structure, and in particular to one kind is based on metal class thin-walled fin knot
The processing method of structure.
Background technique
Electronic component can generate a large amount of heat in the process of running, in order to ensure the normal operation of electronic component,
Its heat generated needs to conduct in time.Under normal conditions, it needs to install a heat-exchanger rig additional for the electronic component.Heat exchange
Device generally comprises metal base plate and several metal fin structures.With the rapid development of rapid photo detector, hot charging is exchanged
The application requirement set is also more and more extensive.In order to increase heat exchange area while reduce the weight of heat-exchanger rig, the thickness of metal fin
It spends more and more thinner.In order to facilitate the installation of electronic component, it is often necessary to be carried out on the thin-walled fin structure of heat-exchanger rig each
The processing of kind mounting structure.
Currently, various processing on the metal class thin-walled fin structure of heat-exchanger rig, often take common machining side
Method.But such method processing, metal thin-wall fin often generate serious deformation, especially want to some accuracies of form and position
Higher heat-exchanger rig is asked to be affected.
Summary of the invention
A kind of processing method based on metal class thin-walled fin structure proposed by the present invention, can solve existing in metal class
The technical issues of method processed on thin-walled fin structure is easy to cause fin structure to deform.
To achieve the above object, the invention adopts the following technical scheme:
A kind of processing method based on metal class thin-walled fin structure, comprising the following steps:
Heat-exchanger rig is first worked into size, is placed in normal temperature environment.With hot environment certain crystalline compounds liquid
Change, then the compound injection metal thin-wall fin structure after liquefaction is needed at processing, and in metal thin-wall fin structure bottom end
It is blocked with metal tape.When being cooled to room temperature, the liquefied compound in thin-walled fin structure inner hole is frozen into solid crystals, Gu
State crystalline compounds couple integrally with thin-walled fin structure, at this point, with common machining process in the thin of heat-exchanger rig
On wall fin structure, the design requirement that is machined to of various mounting structures is carried out, and sufficiently adds coolant liquid in process.Gold
Belong to thin-walled fin to be hardly deformed.After completing processing, heat-exchanger rig is put into hot water cleaning, makes thin-walled fin structure
Solid crystals compound in inner hole thoroughly incorporates in water, removes the metal tape of bottom end, and dry up heat dissipation dress with compressed air
Set the water on surfaces externally and internally.
Wherein,
The thin-walled fin structure is metal material.
The crystalline compounds material of the filling is chemical fertilizer, and fusing point is low, soluble easily in water.Such as urea.
The hot environment by the filling crystalline compounds material liquefaction greater than causing maximum temperature.
The metal tape is easily cut, and is easily pasted, is made the thin-walled fin structure bottom end tight of heat-exchanger rig, no leakage.
The hot water cleaning is dissolved in water to be filled crystalline compounds material, and hot water can accelerate the solution rate of filler,
Filled crystalline compounds material is set all to be detached from metal class thin-walled fin structure.
As shown from the above technical solution, a kind of processing method based on metal class thin-walled fin structure of the invention, the party
Method is not only easy to use, at low cost, influences on metal thin-wall fin structure very little.
Detailed description of the invention
Fig. 1 is method flow schematic diagram of the invention；
Fig. 2 is the schematic front view of the involved processing structure of processing method of the embodiment of the present invention one；
Fig. 3 is the left view schematic diagram of the involved processing structure of processing method of the embodiment of the present invention one；
Fig. 4 is the schematic front view of the involved processing structure of processing method of the embodiment of the present invention two；
Fig. 5 is the left view schematic diagram of the involved processing structure of processing method of the embodiment of the present invention two.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.
As shown in Figure 1, the processing method based on metal class thin-walled fin structure described in the present embodiment, comprising:
S100, metal class thin-walled fin structure to be processed is placed on normal temperature environment；
S200, appropriate crystalline compounds are taken and make its liquefaction, then the compound after liquefaction is injected metal thin-wall fin knot
Structure is needed in the inner hole at processing, and is blocked with metal tape；
S300, solid crystals, solid crystals are frozen into the liquefied compound in metal class thin-walled fin structure inner hole
Object is closed to couple integrally with thin-walled fin structure；
S400, on the metal class thin-walled fin structure after step S300, carry out according to demand various mounting structures plus
Work；
S500, complete processing after, by the metal class thin-walled fin structure after processing be put into hot water cleaning, make thin-walled fin
Solid crystals compound in structure inner hole thoroughly incorporates in water, removes the metal tape of bottom end, and dries up.
Illustrate the scheme of the embodiment of the present invention below with reference to concrete application case:
Example one:
Fig. 2 and Fig. 3 is the machining sketch chart on certain template heat-exchanger rig metal class thin-walled fin structure；
Specific procedure of processing is as follows:
1, upper plate 11, metal class thin-walled fin structure 12, lower plate 15 after processing is completed, are placed in heat-exchanger rig
In normal temperature environment.
2, with 150 DEG C of hot environments urea crystal 16, lower than 150 DEG C liquefaction of fusing point.
3, under normal temperature environment, upper plate 11, metal class thin-walled fin structure 12, lower plate 15 bottom end metal-to-metal adhesive
The bonding of band 17 blocks.Urea 16 after liquefaction is injected metal thin-wall fin structure 12 to need 14 at processing, is one in example one
The counterbore of a depth 6mm, diameter 70mm, are cooled to room temperature, at this point, the liquid urea in 12 inner hole of thin-walled fin structure is frozen into admittedly
State crystal 16, solid crystals compound urea 16 couple integrally with thin-walled fin structure 12, fixed thin-walled fin structure 2.
4, to count in a manner of milling on the thin-walled fin structure 12 of heat-exchanger rig, depth 6mm is carried out, the counterbore 14 of diameter 70mm adds
Work is to design requirement, and abundant addition coolant liquid in process.Metal thin-wall fin structure 12 is hardly deformed.
5, heat-exchanger rig is put into 80 DEG C of hot water cleanings, urinates the solid crystals compound in 12 inner hole of thin-walled fin structure
Element 16 thoroughly incorporates in water, removes the metal tape 17 of bottom end, and dry up the water on radiator surfaces externally and internally with compressed air.
Example two:
Fig. 4 and Fig. 5 is the machining sketch chart on certain ring-like heat-exchanger rig metal class thin-walled fin structure；
Certain ring-like heat-exchanger rig matrix is the metal tube that firsthand inside has thin-walled fin floor.For outer diameter ruler
It is very little design size to be machined directly to by lathe.But inner thin-walled fin floor can become if direct lathe process
Shape is serious, if can expend a large amount of working hour using Wire EDM, cost is too high.Now using the present invention, can directly pass through
For outside dimension to design requirement, process is as follows in lathe process:
1, in 21 size of the metal tube of buying (inside has thin-walled fin floor) heat-exchanger rig ring type of getting on the bus out bottom plate
(outer diameter and length) is placed in normal temperature environment to design requirement.
2, with 150 DEG C of hot environments urea crystal (filler, fusing point are lower than 150 DEG C) liquefaction.
3, viscous with metal tape 24 in the bottom end of ring type bottom plate 21, metal class thin-walled fin structure 22 under normal temperature environment
It connects and blocks.Gap 23 between urea (filler) the injection thin-walled fin structure after liquefaction, it is cooled to room temperature, at this point, metal class
Liquid urea in 22 gap of thin-walled fin structure is frozen into solid crystals, solid crystals urea (filler) and thin-walled fin knot
Structure 22 couples integrally, fixed thin-walled fin structure 22.
4, it in a manner of Vehicle Processing on the thin-walled fin structure 22 of heat-exchanger rig, carries out thin-walled fin floor and is machined to design
It is required that and sufficiently adding coolant liquid in process.Metal thin-wall fin structure 22 after processing is hardly deformed.
5, heat-exchanger rig is put into 80 DEG C of hot water cleanings, urinates the solid crystals compound in 22 inner hole of thin-walled fin structure
Plain (filler) thoroughly incorporates in water, removes the metal tape 24 of bottom end, and dry up radiator surfaces externally and internally with compressed air
On water.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each implementation
Technical solution documented by example is modified or equivalent replacement of some of the technical features；And these modification or
Replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (5)
1. a kind of processing method based on metal class thin-walled fin structure, it is characterised in that:
The following steps are included:
S100, metal class thin-walled fin structure to be processed is placed on normal temperature environment；
S200, appropriate crystalline compounds are taken and make its liquefaction, then the compound injection metal thin-wall fin structure after liquefaction is needed
It processes in the inner hole at place, and blocked with metal tape；
S300, solid crystals, solid crystals compound are frozen into the liquefied compound in metal class thin-walled fin structure inner hole
Couple integrally with thin-walled fin structure；
S400, on the metal class thin-walled fin structure after step S300, carry out the processing of various mounting structures according to demand；
S500, complete processing after, by the metal class thin-walled fin structure after processing be put into hot water cleaning, make thin-walled fin structure
Solid crystals compound in inner hole thoroughly incorporates in water, removes the metal tape of bottom end, and dries up.
2. the processing method according to claim 1 based on metal class thin-walled fin structure, it is characterised in that: the step
Using to be greater than in S200 causes the hot environment of the maximum temperature of filled crystalline compounds material liquefaction to make its liquefaction.
3. the processing method according to claim 1 based on metal class thin-walled fin structure, it is characterised in that: the step
Coolant liquid is sufficiently added in S400 in process.
4. the processing method according to claim 1 based on metal class thin-walled fin structure, it is characterised in that: the crystal
Compound is chemical fertilizer.
5. the processing method according to claim 4 based on metal class thin-walled fin structure, it is characterised in that: the chemistry
Fertilizer is urea.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811568492.9A CN109773525A (en) | 2018-12-21 | 2018-12-21 | A kind of processing method based on metal class thin-walled fin structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811568492.9A CN109773525A (en) | 2018-12-21 | 2018-12-21 | A kind of processing method based on metal class thin-walled fin structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111151975A (en) * | 2020-01-06 | 2020-05-15 | 成都四威高科技产业园有限公司 | Thin-wall part machining method |
| CN115401425A (en) * | 2022-09-30 | 2022-11-29 | 湖南飞宇航空装备有限公司 | Numerical control machining method for reinforced thin-wall metal part |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105328423A (en) * | 2015-12-09 | 2016-02-17 | 贵州黎阳航空动力有限公司 | Processing method of thin-wall slender shaft parts |
-
2018
- 2018-12-21 CN CN201811568492.9A patent/CN109773525A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105328423A (en) * | 2015-12-09 | 2016-02-17 | 贵州黎阳航空动力有限公司 | Processing method of thin-wall slender shaft parts |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111151975A (en) * | 2020-01-06 | 2020-05-15 | 成都四威高科技产业园有限公司 | Thin-wall part machining method |
| CN115401425A (en) * | 2022-09-30 | 2022-11-29 | 湖南飞宇航空装备有限公司 | Numerical control machining method for reinforced thin-wall metal part |
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Application publication date: 20190521 |