CN109772247A - A kind of bi-medium to block plasma discharge basic unit and reactor - Google Patents
A kind of bi-medium to block plasma discharge basic unit and reactor Download PDFInfo
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- CN109772247A CN109772247A CN201910225985.0A CN201910225985A CN109772247A CN 109772247 A CN109772247 A CN 109772247A CN 201910225985 A CN201910225985 A CN 201910225985A CN 109772247 A CN109772247 A CN 109772247A
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Abstract
The invention discloses a kind of deformable bi-medium to block plasma discharge basic unit, which includes first medium layer, second dielectric layer, the first conductive part, the second conductive part and dottle pin.First conductive part and the second conductive part are wrapped up by first medium layer package and second dielectric layer respectively, and dottle pin separates first medium layer and second dielectric layer, to form a fixed discharging gap.Discharge cell disclosed by the invention has any bending, can be wound fixed plasma discharge reactor as needed, and easy to operate, manufacturing cost is cheap, and has preferable Uniform Discharge effect.
Description
Technical field
The present invention relates to plasma reactor fields more particularly to one kind can be used for such as room air, industrial waste gas, vapour
A kind of bi-medium to block plasma discharge basic unit and reactor of tail gas.
Background technique
Dielectric barrier discharge (Dielectric Barrier Discharge, DBD) is that have dielectric insertion electric discharge empty
Between a kind of nonequilibrium state gas discharge be also known as dielectric impedance corona discharge or voltolising.It has been widely used for sterilization,
The every field such as disinfection, indoor air purification, VOCs treatment, ozone preparation, material surface processing.Double-dielectric barrier discharge
It is a kind of form of dielectric barrier discharge, it can be in hyperbar and very wide frequency ranges of operation, and in bi-medium to block
In discharge cell structure, dielectric layer separates electrode and gas to be processed, so that there is double-dielectric barrier discharge electrode not located
The advantages of managing substance corrosion.
At present using it is more be surface-to-surface double-dielectric barrier discharge structure (Fig. 1), that is, be followed successively by high-field electrode, insulation is situated between
Matter layer, discharging gap, insulating medium layer, grounding electrode.Generally using ceramic wafer or quartz plate as dielectric layer, stainless steel substrates
As electrode material, discharged by the discharging gap after the electric high pressure of application between insulating medium layer.However, each electric discharge
Unit is all individual a set of high-field electrode, insulating medium layer, discharging gap, insulating medium layer, grounding electrode, such as patent
The discharge cell that CN103861435B is proposed, a plasma reactor needs are adopted in the example of automobile exhaust gas processing apparatus
With a large amount of discharge cell, a large amount of stainless steel, glass or ceramic material are correspondingly needed, causes equipment volume big, is manufactured
It is at high cost, and structure is complicated.
Summary of the invention
The technical problem to be solved in the present invention is that for medium barrier plasma reactor apparatus body in the prior art
Product is big, manufacturing cost is high and the drawbacks described above such as structure is complicated, provide a kind of manufacturing cost it is low and can Uniform Discharge double media
Barrier discharge basic unit and its application method.And the discharge cell of the invention has any bending, can wind as needed
Form fixed plasma discharge reactor.
The present invention solves scheme used by its technical problem: a kind of bi-medium to block plasma discharge is substantially single
The second unit part of member, the first unit part including tubular type and tubular type and setting are between first unit part and second unit part
At least one dottle pin；The first unit part includes the first conductive part and the first medium layer that is wrapped in outside the first conductive part；
The second unit part includes the second conductive part and the second dielectric layer that is wrapped in outside the second conductive part；First unit part and second
Unit piece has any bending；
First conductive part and the second conductive part are separately connected high voltage power supply high-voltage end and ground terminal；
The dottle pin separates first medium layer and second dielectric layer, forms discharging gap between adjacent dottle pin；
The material of first medium layer and second dielectric layer be one of insulating properties metal oxide, organic material or they wherein
Two or more compounds.
In above-mentioned technical proposal, the structure of traditional face formula stratiform is abandoned, using tubular type, and is arranged to arbitrarily to be bent
, it can according to need and be wound in specific shape, and by the selection to first medium layer and the material material of second dielectric layer,
So that being convenient for bending, bending degree is controllable, and under no external force, is positively retained at deformed state.
As to the preferred of technical solution of the present invention, the cross-sectional shape of first unit part and second unit part is circle
Shape, polygon (including equilateral polygon and inequilateral polygon), diamond shape, triangle, semicircle, sector, pentagonal, ellipse
Shape, trapezoidal hole and irregular closed type shape.
Further preferably, the cross-sectional shape of first unit part and second unit part is circle, equilateral polygon, ellipse
One of.These types of shape, the stress overcome required for bending is small, more labor-saving, and is bent the screen resilience to after needing shape
It is small, the more conducively holding of curvature.
As to the preferred of technical solution of the present invention, the external diametrical extent of first unit part and second unit part is 0.1
For millimeter to 10 centimetres, relatively good external magnitude range is 2 millimeters to 20 millimeters.
As to the preferred of technical solution of the present invention, the thickness range of first medium layer and second dielectric layer is 1 micro-
For rice to 10 centimetres, preferable wall thickness range is 0.1 millimeter to 2 millimeters.
As to the preferred of technical solution of the present invention, first medium layer has along between first medium layer length direction
Every setting regular zone and thickness be less than regular zone thickness the area Jian Hou, the area Jian Hou with a thickness of 2 millimeters to 5 millimeters.Make
For to the preferred of technical solution of the present invention, the material of dottle pin is the nothing other than insulating properties metal oxide, metal oxide
Machine material, organic material or their wherein two or more compounds；The metal oxide is cerium oxide, iron oxide, oxygen
Change aluminium, zinc oxide, titanium oxide, chromium oxide, zirconium oxide, magnesia or nickel oxide, the inorganic material other than the metal oxide
For mica, silica or glass, and the organic material is plastics or rubber.
As to the preferred of technical solution of the present invention, the material of the first medium layer and second dielectric layer is metal
The mixture of oxide and organic material.More preferably, bending property is more preferable for obtained first medium layer and second dielectric layer toughness.
Further preferably, the material of the first medium layer and second dielectric layer is the mixing of magnesium metal and butadiene rubber
Object.Not only good bandability, and it is durable.As to the preferred of technical solution of the present invention, the first conductive part and second
Conductive part is at least one of metal bar, wire, conducting solution.
Further preferably, the first conductive part and the second conductive part are wire.
As to the preferred of technical solution of the present invention, metal bar used in the first conductive part and the second conductive part and
The material of wire is conductive material, such as at least one of gold, silver, copper, aluminium, iron and stainless steel.
As to the preferred of technical solution of the present invention, the cross section and first medium layer of metal bar and wire and the
Second medium layer is consistent, i.e., shape be circle, polygon (including equilateral polygon and inequilateral polygon), diamond shape, triangle,
Semicircle, sector, five-pointed star, ellipse, trapezoidal and irregular closed type shape.
As to the preferred of technical solution of the present invention, conducting solution used in the first conductive part and the second conductive part
For acid, alkali, salting liquid, such as sodium chloride, zinc chloride, magnesium chloride, copper chloride, iron chloride, sodium nitrate, magnesium nitrate, dust technology, dilute sulphur
Acid, dilute hydrochloric acid, sodium hydroxide, barium hydroxide, potassium hydroxide, calcium hydroxide.
As the discharging gap d to the preferred of technical solution of the present invention, between first medium layer and second dielectric layer
≥0.1mm。
It, can be with multiple units simultaneously during using the discharge cell as to the preferred of technical solution of the present invention
Connection.
The present invention also provides a kind of reactors, include above-mentioned electric discharge basic unit.
By implementing above-mentioned technical proposal, the present invention has the advantage that electric discharge basic unit provided by the invention, it can
Any bending as needed, convenient for bending, bending degree is controllable, and under no external force, is positively retained at deformed state, no
It only can satisfy different needs, and volume is controllable, structure is simple.
Detailed description of the invention
Below in conjunction with accompanying drawings and embodiments, the present invention will be further described, in attached drawing:
Fig. 1 is double medium discharge structural schematic diagrams of surface-to-surface in the prior art；
Fig. 2 is the structural schematic diagram of electric discharge basic unit in the present invention；
Fig. 3 is electric discharge basic unit cross-sectional structure schematic diagram in the present invention；
Fig. 4 is dottle pin assembly structure diagram in the present invention,；
Fig. 5 is the double-dielectric barrier discharge structure of reactor schematic diagram that electric discharge basic unit is coiled to form in the present invention；
Fig. 6 is the quadrangle double-dielectric barrier discharge structure of reactor schematic diagram that discharge cell is entwined in the present invention；
In attached drawing, 101- first medium layer, 102- second dielectric layer, the first conductive part of 103-, the second conductive part of 104-, 105- put
Electric gap, 200- dottle pin, 201- dottle pin pin end, 202- dottle pin female connector, 300- high voltage unit label, 400- ground unit mark
Number, 500- disc holder, 501- frame.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
Embodiment one:
The bi-medium to block plasma discharge basic unit as shown in Fig. 2-4, including first medium layer 101, second dielectric layer
102, the first conductive part 103, the second conductive part 104 and dottle pin 200, first medium layer 101 and second dielectric layer 102 use oxygen
Change magnesium material, section is circle, and caliber 1mm, wall thickness 0.2mm are wrapped in the outer of the first conductive part 103 and the second conductive part 104
Portion, the first conductive part 103 and the second conductive part 104 choose the copper wire that can arbitrarily bend, diameter 0.8mm.Dottle pin 200 is equidistant
It is fixed between first medium layer 101 and second dielectric layer 102, forms fixed discharging gap 1mm, both ends are respectively provided with dottle pin
Pin end 401 and dottle pin female connector 202, the two are cooperatively connected, as shown in Fig. 4.Since the discharge cell integrally has arbitrarily
Bending is wound fixed 500 plasma discharge reactor of disc holder, as shown in figure 5, the reactor as needed
It can be placed in exhaust piping, purified treatment carried out to it when gas passes through.
Embodiment two:
Bi-medium to block plasma discharge basic unit, including first medium layer 101, second dielectric layer 102, the first conductive part
103, the second conductive part 104 and dottle pin 200, first medium layer 101 and second dielectric layer 102 choose zirconium oxide material, section
In regular hexagon, wall thickness 0.5mm, transversal external magnitude range is at 4 millimeters to 5 millimeters, the first conductive part 103 and the second conductive part
104 choose the copper rod that can arbitrarily bend.Dottle pin 200 is equidistantly fixed between first medium layer 101 and second dielectric layer 102,
Fixed discharging gap 2mm is formed, both ends are respectively provided with dottle pin pin end 401 and dottle pin female connector 202, and the two is cooperatively connected.
Discharge cell is wrapped on square frame 501, plane net purifying net is formed, as shown in fig. 6, the purifying net can be used for sky
Gas purifier, fresh air purifier, in sterilizing machine.
Embodiment three:
Bi-medium to block plasma discharge basic unit, including first medium layer 101, second dielectric layer 102, the first conductive part
103, the second conductive part 104 and dottle pin 200, first medium layer 101 and 102 section of second dielectric layer are triangular in shape, wall thickness
0.5mm, transversal external magnitude range is at 15 millimeters to 20 millimeters, and material uses the mixture of magnesia and butadiene rubber, along fourth
2 parts by weight of rubber, 0.5 parts by weight of magnesia.First conductive part 103 and the second conductive part 104 use conducting solution sodium chloride, fill
The sealing space that full first medium layer 101 and second dielectric layer 102 are formed.Dottle pin 200 is equidistantly fixed on first medium layer 101
Between second dielectric layer 102, fixed discharging gap 3mm is formed, both ends are respectively provided with dottle pin pin end 401 and dottle pin mother connects
First 202, the two is cooperatively connected.
It should be noted that the above citing is only a specific embodiment of the invention.More than it is clear that the invention is not restricted to
Embodiment, acceptable there are many deformations.Those skilled in the art directly can export or join from present disclosure
All deformations expected, are considered as protection scope of the present invention.
Claims (9)
1. a kind of bi-medium to block plasma discharge basic unit, which is characterized in that by first unit part and second unit part
And at least one dottle pin between first unit part and second unit part is set；The first unit part includes first conductive
Portion and the first medium layer being wrapped in outside the first conductive part；The second unit part includes the second conductive part and is wrapped in second and leads
Second dielectric layer outside electric portion；First unit part and second unit part have any bending；
First conductive part and the second conductive part are separately connected high voltage power supply high-voltage end and ground terminal；
The dottle pin separates first medium layer and second dielectric layer, forms discharging gap between adjacent dottle pin；
The material of first medium layer and second dielectric layer is one of insulating properties metal oxide, organic material or a variety of mixed
Close object.
2. bi-medium to block plasma discharge basic unit according to claim 1, which is characterized in that between the electric discharge
Gap d >=0.1mm.
3. bi-medium to block plasma discharge basic unit according to claim 1, which is characterized in that first unit part
External diametrical extent with second unit part is at 2 millimeters to 20 millimeters.
4. bi-medium to block plasma discharge basic unit according to claim 1, which is characterized in that first medium layer
With second dielectric layer with a thickness of 0.1 millimeter to 2 millimeters.
5. according to bi-medium to block plasma discharge basic unit described in claim 1, which is characterized in that insulating properties metal oxygen
Compound is cerium oxide, iron oxide, aluminium oxide, zinc oxide, titanium oxide, chromium oxide, zirconium oxide, magnesia or nickel oxide.
6. bi-medium to block plasma discharge basic unit according to claim 1, which is characterized in that first medium layer
Cross-sectional shape with second dielectric layer is one of circle, equilateral polygon, ellipse.
7. bi-medium to block plasma discharge basic unit according to claim 1, which is characterized in that the first conductive part
It is at least one of metal bar, wire, conducting solution with the second conductive part.
8. bi-medium to block plasma discharge basic unit according to claim 7, which is characterized in that the first conductive part
It is wire with the second conductive part.
9. a kind of reactor has basic unit of discharging as described in claim any one of 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910225985.0A CN109772247A (en) | 2019-03-25 | 2019-03-25 | A kind of bi-medium to block plasma discharge basic unit and reactor |
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| CN201910225985.0A CN109772247A (en) | 2019-03-25 | 2019-03-25 | A kind of bi-medium to block plasma discharge basic unit and reactor |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102307425A (en) * | 2011-06-24 | 2012-01-04 | 北京大学 | Combinable array plasma generating device |
| CN102695353A (en) * | 2012-05-31 | 2012-09-26 | 姚水良 | Basic unit and reactor utilizing high voltage to generate gas plasma discharge |
| CN107615889A (en) * | 2015-05-27 | 2018-01-19 | 夏普株式会社 | Plasma generating element |
| CN108043182A (en) * | 2017-12-15 | 2018-05-18 | 浙江工商大学 | A kind of electric discharge elementary cell stopped using multimedium and reactor and waste gas processing method |
-
2019
- 2019-03-25 CN CN201910225985.0A patent/CN109772247A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102307425A (en) * | 2011-06-24 | 2012-01-04 | 北京大学 | Combinable array plasma generating device |
| CN102695353A (en) * | 2012-05-31 | 2012-09-26 | 姚水良 | Basic unit and reactor utilizing high voltage to generate gas plasma discharge |
| CN107615889A (en) * | 2015-05-27 | 2018-01-19 | 夏普株式会社 | Plasma generating element |
| CN108043182A (en) * | 2017-12-15 | 2018-05-18 | 浙江工商大学 | A kind of electric discharge elementary cell stopped using multimedium and reactor and waste gas processing method |
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