CN109755403A - A kind of Organic Light Emitting Diode and display panel - Google Patents

A kind of Organic Light Emitting Diode and display panel Download PDF

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Publication number
CN109755403A
CN109755403A CN201910024646.6A CN201910024646A CN109755403A CN 109755403 A CN109755403 A CN 109755403A CN 201910024646 A CN201910024646 A CN 201910024646A CN 109755403 A CN109755403 A CN 109755403A
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layer
light emitting
emitting diode
organic light
exciton
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高建
罗志忠
丁德宝
杨艳芳
梁迪
韩赛赛
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Yungu Guan Technology Co Ltd
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Yungu Guan Technology Co Ltd
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Abstract

The invention discloses a kind of Organic Light Emitting Diode and display panels.Organic Light Emitting Diode includes the anode, organic luminous layer and cathode being stacked, it further include exciton limiting layer, exciton limiting layer is set between surface and cathode of the organic luminous layer far from cathode, wherein exciton limiting layer is for limiting hole transport and migration electronics.The transmission that the embodiment of the present invention passes through limitation hole, both the difference of hole transport rate and electron transfer rate had been can reduce, it improves hole and electronics is complex as the probability of exciton, realize the plural equilibrium in hole and electronics in organic luminous layer, enhance the luminescent properties of Organic Light Emitting Diode, the rate of rise that current density when voltage increases can also be reduced under conditions of same voltage, improves the stability of Organic Light Emitting Diode, and then extend the service life of Organic Light Emitting Diode.

Description

A kind of Organic Light Emitting Diode and display panel
Technical field
The present embodiments relate to field of display technology more particularly to a kind of Organic Light Emitting Diodes and display panel.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) utilizes self luminous light emitting machine System, does not need backlight, when being applied to display panel and display device, the integral thickness of display panel and display device compared with It is thin, it is advantageously implemented its lightening design.Meanwhile Organic Light Emitting Diode is high with display brightness, visual angle is wide, fast response time Etc. advantages, currently, being widely used in display fields such as mobile phone, PDA, digital cameras.
In existing OLED, the generation of interlayer potential barrier will cause the driving voltage of OLED and be stepped up with using, and The raising of voltage necessarily causes the performance of OLED to decline, efficiency decline, service life reduction.
Summary of the invention
The present invention provides a kind of Organic Light Emitting Diode and display panel and extends OLED's to improve the stability of OLED Service life.
In a first aspect, the embodiment of the invention provides a kind of Organic Light Emitting Diode, including the anode, organic being stacked Luminescent layer and cathode;It further include exciton limiting layer, the exciton limiting layer is set to the organic luminous layer far from the cathode Surface and the cathode between;
Wherein, the exciton limiting layer is for limiting hole transport and migration electronics.
It further, further include electron transfer layer, the electron transfer layer is set to the organic luminous layer and the yin Between pole, the exciton limiting layer is set between the electron transfer layer and the organic luminous layer.
Further, the horizontal area of the exciton limiting layer is equal to the horizontal area of the organic luminous layer.
Further, the exciton limiting layer is embedded in the organic luminous layer.
Further, the horizontal area of the exciton limiting layer is less than the horizontal area of the organic luminous layer.
Further, the thickness range of the exciton limiting layer is
Further, the material of the exciton limiting layer is insulating materials.
Further, the material of the exciton limiting layer is the inorganic salts that the first major element and the 7th major element are formed Or the carbonate formed for the first major element.
It further, further include the hole injection layer and hole transmission layer being stacked, and the electronics note being stacked Enter layer and electron transfer layer;
The hole injection layer is set between the organic luminous layer and the anode, and the hole transmission layer is set to Between the organic luminous layer and the hole injection layer;The electron injecting layer is set to the exciton limiting layer and the yin Between pole, the electron transfer layer is set between the electron injecting layer and the exciton limiting layer.
Second aspect the embodiment of the invention also provides a kind of display panel, including underlay substrate and is located at the lining Multiple pixel units of substrate side;
Wherein, the pixel unit includes the Organic Light Emitting Diode that any embodiment of that present invention provides.
Technical solution of the present invention, Organic Light Emitting Diode include the anode, organic luminous layer and cathode being stacked, also Including exciton limiting layer, exciton limiting layer is set between organic luminous layer and cathode, wherein exciton limiting layer is for limiting sky Cave and migration electronics.The embodiment of the present invention reduces the quantity and reduction that hole passes through exciton limiting layer by exciton limiting layer The transmission rate in hole both can reduce the difference of hole transport rate and electron transfer rate to limit the transmission in hole, It improves hole and electronics is complex as the probability of exciton, so as to realize the plural equilibrium in hole and electronics in organic luminous layer, The luminescent properties of Organic Light Emitting Diode are enhanced, hole transport can also be reduced to cathode under conditions of same voltage Quantity improves the stability of Organic Light Emitting Diode so as to reduce the rate of rise of current density when voltage increases, into And extend the service life of Organic Light Emitting Diode.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of Organic Light Emitting Diode provided in an embodiment of the present invention;
Fig. 2 is the schematic diagram of the section structure of another Organic Light Emitting Diode provided in an embodiment of the present invention;
Fig. 3 is the schematic diagram of the section structure of another Organic Light Emitting Diode provided in an embodiment of the present invention;
Fig. 4 is the schematic diagram of the section structure of another Organic Light Emitting Diode provided in an embodiment of the present invention;
Fig. 5 is the schematic diagram of the section structure of another Organic Light Emitting Diode provided in an embodiment of the present invention;
Fig. 6 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
In the prior art, Organic Light Emitting Diode includes at least anode, organic luminous layer and the cathode being stacked.When giving When Organic Light Emitting Diode provides driving current, electronics injects organic luminous layer by cathode, and organic light emission is injected by anode in hole Layer, electrons and holes are compounded to form the exciton of excitation state, the exciton relaxation of excitation state in organic luminous layer, and release in the form of light Exoergic amount, therefore organic luminous layer shines.Because the energy level of Organic Light Emitting Diode different layers is different, therefore hole and electronics be not In the transmission process of same layer, the potential barrier of different interlayers can be encountered, the presence of potential barrier will cause the use with OLED, driving voltage The phenomenon that being stepped up, OLED performance caused to decline.The transmission rate in hole is greater than the transmission of electronics in Organic Light Emitting Diode Rate, with the raising of driving voltage, the quantity in hole can be greater than the quantity of electronics in organic luminous layer, and excessive hole can not Compound, which can not be continued to transmit to cathode side by compound hole, and the increasing of J- type can be presented in the current density of OLED Long, the heat in turn resulting in OLED generation increases, efficiency decline, service life reduction.
Based on the above issues, the embodiment of the invention provides a kind of Organic Light Emitting Diodes.The Organic Light Emitting Diode packet Include the anode, organic luminous layer and cathode being stacked;It further include simultaneously exciton limiting layer, which is set to organic Between surface and cathode of the luminescent layer far from the cathode;Wherein, the exciton limiting layer is for limiting hole transport and migration Electronics.
Illustratively, Fig. 1 is a kind of the schematic diagram of the section structure of Organic Light Emitting Diode provided in an embodiment of the present invention, such as Shown in Fig. 1, which includes anode 11, organic luminous layer 12, exciton limiting layer 13 and the yin being stacked Pole 14.Wherein, exciton limiting layer 13 is set between organic luminous layer 12 and cathode 14, for limiting hole and migration electricity Son.
Specifically, the material of anode 11 can be indium tin oxide (ITO).The material of cathode 14 can be metal material, such as Aluminium (Al), gold (Au), the lower conductive material of the silver work functions such as (Ag) or the metal alloy including Ag.Organic luminous layer 12 can wrap Light emitting host material and light emitting guest material are included, and light emitting guest material determines the luminescent color of Organic Light Emitting Diode 10.Show Example property, light emitting host material can be 8- hydroxyquinoline aluminum (Alq3), 9,10- bis- (1- naphthalene) anthracene (ADN) or 4, and 4'- is bis- (9H- carbazole -9- base) biphenyl (CBP), light emitting guest material can for 2- tert-butyl -4- (dicyano methylene) -6- [2- (1,1, 7,7- tetramethyl julolidine -9- bases) vinyl] -4H- pyrans (DCJTB), correspond to the luminous face of Organic Light Emitting Diode 10 Color is red;Alternatively, light emitting guest material can be N, N'- dimethylquinacridone (DMQA), N, N'- dibutyl quinacridone (DBQA), 5,12- dibutyl -1,3,8,10- tetramethyl quinacridones (TMDBQA) or cumarin 545T (C545T) are corresponded to The luminescent color of Organic Light Emitting Diode 10 is green;Alternatively, light emitting guest material can be the bis- (9- ethyl -3- carbazole second of 4,4'- Alkenyl) -1,1'- biphenyl (BCzVBi), 4,4'- bis- [4- (di-p-tolyl amino) styryl] biphenyl (DPAVBi), 1,4- Bis- [4- (two p-totuidine bases) styryl] benzene (DPAVB) or 3,3'- (two -2,1- vinyl of 1,4- phenyl) two (9- ethyls - 9H- carbazole) (BCZVB), the luminescent color for corresponding to Organic Light Emitting Diode 10 is blue.It should be noted that above-mentioned material Exemplary only explanation, the present invention to the material of anode 11, organic luminous layer 12 and cathode 14 without limitation.
The principle of luminosity of Organic Light Emitting Diode 10 mainly include carrier (carrier can be electronics or hole) injection, The luminous Four processes of carrier transport, Carrier recombination and exciton de excitation.Specifically, when applying one to Organic Light Emitting Diode 10 When fixed voltage (also being understood as providing driving current), the hole of anode 11 and the electronics of cathode 14 are injected separately into organic hair In photosphere 12 (this is carrier injection process);Injected electrons and hole transmitted under the action of electric field (this be carrier pass Defeated process);Electrons and holes acted on by coulomb it is compound in organic luminous layer 12, generate exciton (this be Carrier recombination mistake Journey);Release photon shines (this is exciton de excitation luminescence process) while exciton returns to ground state by excitation state.
In the technical program, the hole that anode 11 generates can be directly transferred to organic luminous layer 12, the electricity that cathode 14 generates Son need to be transmitted to organic luminous layer 12 by exciton limiting layer 13.Moreover, the electricity that hole and cathode 14 that anode 11 generates generate The voltage that the density of son is applied with Organic Light Emitting Diode 10 increases and increases.
Exciton limiting layer 13 has the ability of limitation hole transport, while can migrate electronics.Exciton limiting layer 13 at this time Pass through the quantity of exciton limiting layer 13 by reduction hole and reduces the transmission in the transmission rate limitation hole in hole, and electronics Can be with tunnel exciton limiting layer 13, therefore can reduce the transmission rate and electron-transport in hole by the way that exciton limiting layer 13 is arranged The difference of rate, improves hole and electronics is complex as the probability of exciton, and then improves the plural equilibrium of hole and electronics.
When Organic Light Emitting Diode 10 is applied voltage, the hole that anode 11 generates is transmitted to organic light emission from anode 11 Layer 12, it is compound in organic luminous layer 12 that the electronics that cathode 14 generates from cathode 14 is transmitted to organic luminous layer 12, hole and electronics It shines.And the transmission rate in hole be greater than electronics transmission rate, therefore in organic luminous layer 12 partial holes cannot completely with Electronics is compound, continues to transmit to 14 direction of cathode across organic luminous layer 12.Exciton limiting layer 13 is arranged in organic luminous layer 12 Between cathode 14, when at hole transport to exciton limiting layer 13, exciton limiting layer 13, which limits hole, to be continued to 14 side of cathode To transmission, i.e. exciton limiting layer 13 reduces hole and passes through the quantity of exciton limiting layer 13 and reduce the transmission rate in hole, phase Than in the Organic Light Emitting Diode of no exciton limiting layer 13, not only can reduce hole transport rate and electron transfer rate Difference increases the recombination probability in hole and electronics, and so as to realize, hole and the compound of electronics are put down in organic luminous layer 12 Weighing apparatus, enhances the luminescent properties of Organic Light Emitting Diode 10.Moreover, under conditions of same voltage, hole transport to cathode 14 Quantity decline, so as to reduce voltage increase when current density rate of rise, improve Organic Light Emitting Diode 10 Stability, to extend the service life of Organic Light Emitting Diode 10.
The embodiment of the present invention also provides another technical solution, and Fig. 2 is the organic hair of another kind provided in an embodiment of the present invention The schematic diagram of the section structure of optical diode, as shown in Fig. 2, exciton limiting layer 13 is embedded in organic luminous layer 12.
Specifically, when exciton limiting layer 13 is embedded in organic luminous layer 12, exciton limiting layer 13 be can be equally used for The hole limited in organic luminous layer 12 is transmitted to 14 direction of cathode, and principle and effect are arranged with exciton limiting layer 13 organic Identical when between luminescent layer 12 and cathode 14, details are not described herein again.
The technical solution of the present embodiment, Organic Light Emitting Diode include the anode, organic luminous layer and cathode being stacked, It further include exciton limiting layer, exciton limiting layer is set between surface and cathode of the organic luminous layer far from cathode.Wherein, exciton Limiting layer is for limiting hole and migration electronics.The embodiment of the present invention reduces hole by exciton limiting layer and is limited by exciton The quantity of layer and the transmission rate for reducing hole both can reduce hole transport rate and electricity to limit the transmission in hole The difference of sub- transmission rate, improves hole and electronics is complex as the probability of exciton, so as to realize hole in organic luminous layer With the plural equilibrium of electronics, the luminescent properties of Organic Light Emitting Diode are enhanced, can also be reduced under conditions of same voltage The quantity of hole transport to cathode improves organic light emission so as to reduce the rate of rise of current density when voltage increases The stability of diode, and then extend the service life of Organic Light Emitting Diode.
It on the basis of above-mentioned each technical solution, continues to refer to figure 1, when exciton limiting layer 13 is set to organic luminous layer 12 When between cathode 14, the horizontal area of exciton limiting layer 13 is equal to the horizontal area of organic luminous layer 12.
Specifically, as shown in Figure 1, when exciton limiting layer 13 is set between organic luminous layer 12 and cathode 14, exciton Limiting layer 13 is the tunic layer for forming Organic Light Emitting Diode 10, therefore the horizontal area of exciton limiting layer 13 is equal to organic The horizontal area of luminescent layer 12 to avoid because there are contact zones between organic luminous layer 12 and cathode 14, and makes partial holes It is transmitted without restriction to 14 direction of cathode by the contact zone, in turn results in the effect difference in the limitation of exciton limiting layer 13 hole Problem.
On the basis of above-mentioned each technical solution, Fig. 3 is another Organic Light Emitting Diode provided in an embodiment of the present invention The schematic diagram of the section structure, as shown in figure 3, when exciton limiting layer 13 is embedded in organic luminous layer 12, exciton limiting layer 13 Horizontal area it is equal with the horizontal area of organic luminous layer 12 when, organic luminous layer 12 is equivalent to the first organic luminous layer 121 With the second organic luminous layer 122, the first organic luminous layer 121 is arranged between anode 11 and exciton limiting layer 13, and second is organic Luminescent layer 122 is arranged between exciton limiting layer 13 and cathode 14.Organic Light Emitting Diode 10 is applied voltage, and anode 11 generates Hole be transmitted to the first organic luminous layer 121 from anode 11, and exciton limiting layer 13 limits hole and continues to second organic hair The transmission of 122 direction of photosphere, therefore the hole in the first organic luminous layer 121 limits the biography in hole not over exciton limiting layer 13 It is defeated.And the second organic luminous layer 122 is arranged between exciton limiting layer 13 and cathode 14, therefore is transmitted to the second organic light emission Hole in layer 122 has already passed through the restriction effect of exciton limiting layer 13, the hole transmission rate in the second organic luminous layer 122 Reduce with the difference of electron transfer rate, the recombination probability of hole and electronics increases, so as to realize the second organic luminous layer The plural equilibrium in hole and electronics in 122.It follows that the first organic luminous layer 121 and the second organic luminous layer 122 shine Effect is different.The horizontal area for being less than organic luminous layer 12 therefore, it is necessary to which the horizontal area of exciton limiting layer 13 is arranged, such as Fig. 2 Shown, exciton limiting layer 13 is embedded in organic luminous layer 12, and the horizontal area of exciton limiting layer 13 is less than organic luminous layer 12 Horizontal area.
Specifically, in order to avoid the barrier organic luminous layer 12 completely of exciton limiting layer 13, it is made to be equivalent to two-layer luminescent layer, Cause the illumination effect of the organic luminous layer 12 of 13 two sides of exciton limiting layer different, the horizontal plane of exciton limiting layer 13 can be set Product is less than the horizontal area of organic luminous layer 12, so that exciton limiting layer 13 is played limitation to entire organic luminous layer 12 empty The effect of cave transmission, the phenomenon that 12 non-uniform light of transmission and organic luminous layer in hole can be stopped.
On the basis of above-mentioned each technical solution, the thickness range of exciton limiting layer is
Specifically, the material of exciton limiting layer can be insulating materials, when the very thin thickness of exciton limiting layer, exciton limit Preparative layer forms class insulating layer, at this time electronics can tunnelling exciton limiting layer, while exciton limiting layer can limit the transmission in hole.Generally In the case of, the order of magnitude of the thickness of exciton limiting layer is less than the order of magnitude of the thickness of organic luminous layer.Illustratively, exciton limits Layer thickness range beIn this thickness range, the tunnelling of electronics not only may be implemented, but also hole can be stopped. When the thickness of exciton limiting layer is excessively thin, electron tunneling effect is good, but the ability for limiting hole is very weak, can not reduce voltage liter The rate of rise of current density when high.When the thickness of exciton limiting layer is blocked up, exciton limiting layer limits the ability of electronics sharply Rise, electron tunneling it is less able, only less electronics reaches organic luminous layer through exciton limiting layer, greatly reduces In the quantity of the compound electronics of organic luminous layer, the luminous efficiency of Organic Light Emitting Diode is seriously affected.Therefore, exciton limiting layer Thickness range can be set
It should be noted that exciton limiting layer can equally limit the transmission of electronics, but limit the transmittability in hole Greater than the ability of limitation electron-transport, therefore the difference of hole transport rate and electron transfer rate is still reduced on the whole, mention The plural equilibrium in hole and electronics, enhances the luminescent properties of Organic Light Emitting Diode 10 in high organic luminous layer.
Moreover, stopping the ability in hole with regard to weak, therefore can lead to when transfer ability of the exciton limiting layer to electronics is strong It crosses the thickness equilibrium transfer electronics of setting exciton limiting layer and stops the ability in hole.The insulating property (properties) of different materials is different, because In equilibrium transfer electronics and when stopping the ability in hole, the thickness for the exciton limiting layer that different materials are formed is also different for this.
On the basis of above-mentioned each technical solution, the material of exciton limiting layer can be the first major element and the 7th main group The inorganic salts that element is formed.
Specifically, the inorganic salts that the first major element and the 7th major element are formed are insulating materials, and are had in thickness When spending very thin, electronics can tunnelling, while stopping the characteristic in hole, therefore can be used as the material to form exciton limiting layer.It is common The first major element include Li, Na, K, Cs etc., the 7th common major element includes F, Cl, Br, I etc..Illustratively, swash The material of sub- limiting layer can be LiF or NaCl.When the material of exciton limiting layer is LiF, the thickness of exciton limiting layer can be with It is set asThe electron tunneling of exciton limiting layer and the overall permanence in blocking hole are optimal at this time, at this time exciton limiting layer It can be set toWhen the material of exciton limiting layer is NaCl, the thickness of exciton limiting layer be can be set toSwash at this time The electron tunneling of sub- limiting layer and the overall permanence in blocking hole are optimal, and exciton limiting layer can be set at this time
In addition, the material of exciton limiting layer may be the carbonate that the first major element is formed.
Specifically, the carbonate that the first major element is formed is insulating materials, and is had in very thin thickness, and electronics can Tunnelling, while stopping the characteristic in hole, therefore can be used as the material to form exciton limiting layer.Illustratively, cesium carbonate can be with As the material for forming exciton limiting layer.When cesium carbonate is as the material for forming exciton limiting layer, the limitation of exciton limiting layer is empty The effect in the exciton limiting layer limitation hole that the inorganic salts that the effect in cave and the first major element and the 7th major element are formed are formed Fruit is seemingly.
Fig. 4 is the schematic diagram of the section structure of another Organic Light Emitting Diode provided in an embodiment of the present invention, such as Fig. 4 institute Show, Organic Light Emitting Diode 10 further includes the hole injection layer 15 and hole transmission layer 16 being stacked.Hole injection layer 15 is set Be placed between organic luminous layer 12 and anode 11, hole transmission layer 16 be set to organic luminous layer 12 and hole injection layer 15 it Between.It by the way that hole injection layer 15 is arranged in Organic Light Emitting Diode 10, and is directly contacted with anode 11, anode 11 can be reduced With the potential barrier between hole transmission layer 16, the hole that the output of anode 11 can be improved is injected into hole transmission layer 16, and hole passes The transmission rate in hole can be improved in defeated layer 16, to improve the luminous efficiency of Organic Light Emitting Diode 10.
With continued reference to Fig. 4, Organic Light Emitting Diode 10 further includes the electron injecting layer 17 and electron transfer layer being stacked 18.Electron injecting layer 17 is set between exciton limiting layer 13 and cathode 14, and electron transfer layer 18 is set to electron injecting layer 17 Between exciton limiting layer 13.By the way that electron injecting layer 17 is arranged in Organic Light Emitting Diode 10, and directly connect with cathode 14 Touching, can reduce the potential barrier between cathode 14 and electron transfer layer 18, and the electron injection of the output of cathode 14 can be improved to electronics Transport layer 18, and the transmission rate of electronics can be improved in electron transfer layer 18, so as to reinforce Organic Light Emitting Diode 10 Hole and electronics it is compound, reduce the driving voltage of Organic Light Emitting Diode 10, promote shining for Organic Light Emitting Diode 10 Efficiency.
Fig. 5 is the schematic diagram of the section structure of another Organic Light Emitting Diode provided in an embodiment of the present invention, such as Fig. 5 institute Show, unlike Fig. 4, exciton limiting layer 13 is directly embedded in organic luminous layer 12, at this time Organic Light Emitting Diode and Fig. 4 Organic Light Emitting Diode have identical beneficial effect, details are not described herein again.
Fig. 6 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention, as shown in fig. 6, the display panel 20 include underlay substrate 21 and multiple pixel units 22 positioned at 21 side of underlay substrate.Wherein, pixel unit 22 includes this Invent the Organic Light Emitting Diode that any technical solution provides.Display panel 20 provided in an embodiment of the present invention includes any of the above-described Kind Organic Light Emitting Diode, therefore, which also has beneficial effect possessed by above-mentioned Organic Light Emitting Diode, It can refer to above, details are not described herein.
Wherein, underlay substrate 21 can be array substrate, for driving pixel unit 22 to shine.
Illustratively, line direction X and column direction Y are shown in Fig. 6 (where line direction X and column direction Y shown in Fig. 6 Plane be plane where underlay substrate 21), and show the pixel unit 22 arranged in 7 column, 4 row, each pixel unit 22 may include 221, red sub-pixels 222 of a blue subpixels and a green sub-pixels 223;Meanwhile each pixel list Sub-pixel in member 22 is along column direction Y according to blue subpixels 221, the sequence of red sub-pixel 222 and green sub-pixels 223 Arrangement, the arrangement of such pixel are only the exemplary illustration to display panel 20 provided in an embodiment of the present invention, and non-limiting.? In other embodiments, the array arrangement mode of pixel unit 22 can be set, and every according to the actual demand of display panel 20 The number and arrangement mode of blue subpixels 221 in a pixel unit 22, red sub-pixel 222 and green sub-pixels 223, The embodiment of the present invention is not construed as limiting this.
It is further to note that the embodiment of the present invention is not construed as limiting the concrete type of display panel 20, the present invention The technical solution that embodiment proposes can be applied to arbitrarily be related to the display panel of the transmission process of electrons and holes, illustratively Display panel can be OLED display panel, light emitting diode with quantum dots (Quantum Dot Light Emitting Diodes, QLED) display panel or skilled person will appreciate that other display panels.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation, It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.

Claims (10)

1. a kind of Organic Light Emitting Diode, which is characterized in that including the anode, organic luminous layer and cathode being stacked;Also wrap Include exciton limiting layer, the exciton limiting layer be set to surface and the cathode of the organic luminous layer far from the cathode it Between;
Wherein, the exciton limiting layer is for limiting hole transport and migration electronics.
2. Organic Light Emitting Diode according to claim 1, which is characterized in that the exciton limiting layer is set to the yin Between pole and the organic luminous layer.
3. Organic Light Emitting Diode according to claim 2, which is characterized in that the horizontal area etc. of the exciton limiting layer In the horizontal area of the organic luminous layer.
4. Organic Light Emitting Diode according to claim 1, which is characterized in that the exciton limiting layer, which is embedded in, described to be had In machine luminescent layer.
5. Organic Light Emitting Diode according to claim 4, which is characterized in that the horizontal area of the exciton limiting layer is small In the horizontal area of the organic luminous layer.
6. Organic Light Emitting Diode according to claim 1, which is characterized in that the thickness range of the exciton limiting layer is
7. Organic Light Emitting Diode according to claim 1, which is characterized in that the material of the exciton limiting layer is insulation Material.
8. Organic Light Emitting Diode according to claim 7, which is characterized in that the material of the exciton limiting layer is first The inorganic salts that major element and the 7th major element are formed or the carbonate formed for the first major element.
9. Organic Light Emitting Diode according to claim 1, which is characterized in that further include the hole injection layer being stacked And hole transmission layer, and the electron injecting layer and electron transfer layer that are stacked;
The hole injection layer is set between the organic luminous layer and the anode, and the hole transmission layer is set to described Between organic luminous layer and the hole injection layer;The electron injecting layer be set to the exciton limiting layer and the cathode it Between, the electron transfer layer is set between the electron injecting layer and the exciton limiting layer.
10. a kind of display panel, which is characterized in that multiple pixels including underlay substrate and positioned at the underlay substrate side Unit;
Wherein, the pixel unit includes the described in any item Organic Light Emitting Diodes of claim 1-9.
CN201910024646.6A 2019-01-10 2019-01-10 A kind of Organic Light Emitting Diode and display panel Pending CN109755403A (en)

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CN113130778A (en) * 2019-12-30 2021-07-16 Tcl集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof
CN113948663A (en) * 2020-07-15 2022-01-18 Tcl科技集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof

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