CN109755390B - A method of by laser machining top contact structure organic field effect tube - Google Patents
A method of by laser machining top contact structure organic field effect tube Download PDFInfo
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Abstract
The invention discloses a kind of methods by laser machining top contact structure organic field effect tube, the following steps are included: step A, the flexible substrate with a thickness of 120 μm is cleaned using cleanser, then flexible substrate is divided into 3cm × 2cm, step B sets the machined parameters of gate electrode for the parameter of laser-processing system and processing graphic pattern is set as the pattern of gate electrode.The top contact structure organic field effect tube contact resistance processed is smaller, performance is more excellent, using the top contact form that electric property is more excellent, solve the problems, such as to be difficult to prepare the excellent top contact structure organic field effect tube of electric property in conventional method；Traditional electrode production process is simplified, pattern resolution is high, high production efficiency；Raw material is all derived from the chemical products of industrialization large-scale production, greatly reduces cost；The Graphene electrodes of preparation can meet the requirement in flexible circuit to the stress of electrode and bending strain.
Description
Technical field
The present invention relates to semi-conductor electronic device fields, more particularly to a kind of pass through to laser machine top contact structure organic field
The method of effect transistor.
Background technique
Field effect transistor is a kind of active device that solid conductive material electric conductivity is controlled using electric field, is had defeated
Enter resistance height (107~1015Ω), noise is small, dynamic range is big, is easily integrated, without secondary-breakdown phenomenon, area of safety operaton
The advantages that wide, it has also become one of critical elements in microelectronic industry.
But the volume of inorganic field effect transistor is already close to the natural limit of miniaturization；And inorganic field effect pipe is generally adopted
Use silicon as substrate, silica as insulator, these solid shaping materials also limit inorganic field effect pipe to flexible electrical
The development of subdomains.Therefore, flexible device is manufactured as the active material of field effect transistor as one using organic material
The new development trend of kind.
Manufacture organic semi-conductor concept was suggested in 1970, and was reported in 1987 by Koezuka and its colleague
The first organic field effect tube based on thiophene Molecularly Imprinted Polymer.After this, the research of organic field-effect tube is formally drawn
Prelude is opened.Organic field effect tube has the characteristics that following protrusion and greatly paid attention to: material source is wide, can be with
Flexible substrate is compatible, processing temperature is low, is suitble to mass production and low cost etc..It is widely used, can be used for full stress-strain actively
It has been shown that, extensive and super large-scale integration, memory component, sensor, organic laser, mutual not logic circuit and superconductor
Preparation etc..
The structure of field effect transistor mainly includes electrode (source electrode, drain electrode and gate electrode), semiconductor layer and insulation
Layer.Wherein, what is directly contacted with semiconductor layer is source electrode and drain electrode, and gate electrode is directly contacted with insulating layer.Traditional
Organic field effect tube is by changing the relative position of gate electrode, source electrode and drain electrode and semiconductor, to can get not
Same field-effect transistor structure, including two kinds of structures of bottom gate and top-gated, and top-gated and bottom grating structure respectively include bottom contact
With top contact two ways.In general, the electric property of top contact structure field effect transistor is than bottom contact structures field-effect
Transistor is excellent.
But for top contact structure field effect transistor, need to process electrode on organic semiconductor layer.In general,
Using exposure mask evaporation metal or grows the method for other conductors and prepare electrode.And during metal evaporation, metal with have
Nature difference between machine object can also significantly reduce the performance of device.In addition, for different organic semiconducting materials, film forming
Uniformity and surface nature are different, some organic semiconducting materials can not Direct precipitation source, drain electrode, it is necessary to organic semiconductor
Layer is surface modified, this can destroy processed structure, to significantly reduce the performance of entire device.
Growth method can solve this problem to a certain extent.Patent CN101442105A provides a kind of graphene conduct
The method of organic field-effect tube source-drain electrode grows patterned Graphene electrodes by using chemical vapor deposition method.But
It is low that this method substantially increases the complexity of manufacture, production efficiency；And the graphene pattern point of chemical vapor deposition production
Resolution is lower, is substantially reduced so as to cause the resolution ratio and performance of entire device.
In conclusion there are still electrode fabrication process in the manufacturing process of top contact structure organic field effect tube at present
Complicated, device fabrication quality is difficult to the problem of ensureing, it is urgent to provide a kind of top contact structure organic effect crystal of high quality
The processing method of pipe.
Summary of the invention
It is an object of the invention to propose a kind of method by laser machining top contact structure organic field effect tube,
The contact resistance of the top contact structure organic field effect tube processed is smaller, and pattern resolution is high, solves high contact electricity
The problems such as resistance, layer take off and crack.
To achieve this purpose, the present invention adopts the following technical scheme:
A method of by laser machining top contact structure organic field effect tube, being used to prepare bottom gate top contact knot
Structure organic field effect tube, comprising the following steps:
Step A cleans the flexible substrate with a thickness of 120 μm using cleanser, is then divided into flexible substrate
3cm × 2cm, then respectively with acetone, ethyl alcohol and deionized water ultrasonic cleaning, then with being dried with nitrogen, and through surface plasma at
Reason, makes the surface of flexible substrate become hydrophilic；
Step B sets the machined parameters of gate electrode for the parameter of laser-processing system and processing graphic pattern is set as grid electricity
The pattern of pole, then laser-processing system carries out laser treatment to the region of setting gate electrode on flexible substrates, by flexible liner
The skin layer in the region at bottom is changed into graphene, to prepare gate electrode on flexible substrates；
Step C mixes dimethyl silicone polymer virgin rubber and curing agent according to volume ratio, then in magnetic agitation for 10:1
10min is stirred in device, and dimethyl silicone polymer solution is made；
Step D takes the dimethyl silicone polymer solution of step C to drip in the flexible substrate with gate electrode, and using even
The dimethyl silicone polymer solution is equably spin-coated in the flexible substrate by glue machine, is then placed in vacuum oven solid
Change, the insulating layer with a thickness of 20 μm is prepared in the flexible substrate；
Step E, the organic semiconducting materials that will be enriched in carbon are mixed with dehydrated alcohol according to volume ratio for 5:1, and in magnetic force
10min is stirred in blender, and solutions of organic semiconductors is made；
Step F drips to the solutions of organic semiconductors of step E on the insulating layer of step D, and is had using sol evenning machine by described
Machine semiconductor solution is equably spin-coated on the insulating layer, is then placed in vacuum oven and is solidified, on the insulating layer
Prepare the organic semiconductor layer with a thickness of 20 μm；
Step G carries out the region of setting drain electrode and source electrode on organic semiconductor layer according to the method for step B
Laser treatment, the regions transform by the setting drain electrode of organic semiconductor layer and source electrode is graphene, to partly lead organic
Drain electrode and source electrode are prepared on body layer；
Step H takes the dimethyl silicone polymer solution of step C to drip to the organic semiconductor layer with drain electrode and source electrode
On, and the dimethyl silicone polymer solution is equably spin-coated on the organic semiconductor layer using sol evenning machine, then put
Enter in vacuum oven and solidify, prepare packaging protection layer on the organic semiconductor layer, so that bottom gate top contact knot be made
The organic field effect tube of structure.
Preferably, the material of the flexible substrate is polyimides, polymethyl methacrylate, polycarbonate and poly- naphthalene two
One of formic acid glycol ester.
Preferably, the organic semiconducting materials rich in carbon are polythiophene series polymer.
Preferably, the laser-processing system is picosecond ultraviolet laser machining system, the laser of the laser-processing system
Wavelength is 355nm and pulsewidth is 10ps；
In the step B, the machined parameters of the gate electrode are as follows: power duty cycle is 40% and laser scanning speed is
The pattern magnitude of 100mm/s, the gate electrode are 10mm × 10mm, and the gate electrode is located in the upper surface of flexible substrate
Portion；
In the step G: being that 30% and laser are swept by the duty ratio that the parameter of laser-processing system is set as laser power
Speed is retouched as 100mm/s, the pattern magnitude of drain electrode and source electrode is 10mm × 10mm, and drain electrode and source electrode are located at
The left and right edges of the upper surface of organic semiconductor layer.
Preferably, in the step D, the dimethyl silicone polymer solution of 3 drop step C is taken to drip to grid by pipettor
In the flexible substrate of electrode, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and revolves respectively
Turn 50 seconds, the vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour；
In the step F, the solutions of organic semiconductors of 3 drop step E is taken to drip on the insulating layer of step D by pipettor,
The sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively, and the vacuum is dry
Dry case setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour, organic semiconductor layer step instrument obtained
Detect thickness；
In the step H, by pipettor take the dimethyl silicone polymer solution of 3 drop step C drip to drain electrode and
On the organic semiconductor layer of source electrode, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed be 1000 revs/min simultaneously
It rotates 50 seconds respectively, the vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour.
Preferably, a method of by laser machining top contact structure organic field effect tube, being used to prepare top-gated
Top contact structure organic field effect tube, comprising the following steps:
Step A cleans the flexible substrate with a thickness of 120 μm using cleanser, is then divided into flexible substrate
3cm × 2cm, then respectively with acetone, ethyl alcohol and deionized water ultrasonic cleaning, then with being dried with nitrogen, and through surface plasma at
Reason, makes the surface of flexible substrate become hydrophilic；
Step B, the organic semiconducting materials that will be enriched in carbon are mixed with dehydrated alcohol according to volume ratio for 5:1, and in magnetic force
10min is stirred in blender, and solutions of organic semiconductors is made；
Step C drips to the solutions of organic semiconductors of step B in flexible substrate, and uses sol evenning machine by described organic half
Conductor solution is equably spin-coated in the flexible substrate, is then placed in vacuum oven and is solidified, in the flexible substrate
Prepare the organic semiconductor layer with a thickness of 20 μm；
Step D sets the machined parameters of drain electrode and source electrode for the parameter of laser-processing system and processing graphic pattern is set
It is set to the pattern of drain electrode and source electrode, then laser-processing system is on organic semiconductor layer to setting drain electrode and source electrode
Region carry out laser treatment, by organic semiconductor layer setting drain electrode and source electrode regions transform be graphene, thus
Drain electrode and source electrode are prepared on organic semiconductor layer；
Polyimides virgin rubber and curing agent are mixed according to volume ratio for 5:1, are then stirred in magnetic stirring apparatus by step E
10min is mixed, polyimide solution is made；
Step F takes the polyimide solution of step E to drip on the organic semiconductor layer with drain electrode and source electrode, and
The polyimide solution is equably spin-coated on the organic semiconductor layer using sol evenning machine, is then placed in vacuum oven
The insulating layer with a thickness of 20 μm is prepared in middle solidification on the organic semiconductor layer；
Step G sets the machined parameters of gate electrode for the parameter of laser-processing system and processing graphic pattern is set as grid electricity
The pattern of pole, then laser-processing system carries out laser treatment to the region of setting gate electrode on the insulating layer, by insulating layer
The skin layer in the region is changed into graphene, to prepare gate electrode on the insulating layer；
Step H mixes dimethyl silicone polymer virgin rubber and curing agent according to volume ratio, then in magnetic agitation for 10:1
10min is stirred in device, and dimethyl silicone polymer solution is made；
Step I takes the dimethyl silicone polymer solution of step H to drip on the insulating layer with gate electrode, and uses spin coating
The dimethyl silicone polymer solution is equably spin-coated on the insulating layer by machine, is then placed in vacuum oven and is solidified,
Packaging protection layer is prepared on the insulating layer, so that the organic field effect tube of top-gated top contact structure be made.
Preferably, the laser-processing system is picosecond ultraviolet laser machining system, the laser of the laser-processing system
Wavelength is 355nm and pulsewidth is 10ps；
In the step D: being that 30% and laser are swept by the duty ratio that the parameter of laser-processing system is set as laser power
Speed is retouched as 100mm/s, the pattern magnitude of drain electrode and source electrode is 10mm × 10mm, and drain electrode and source electrode are located at
The left and right edges of the upper surface of organic semiconductor layer；
In the step G, the machined parameters of the gate electrode are as follows: power duty cycle is 40% and laser scanning speed is
The pattern magnitude of 100mm/s, the gate electrode are 10mm × 10mm, and the gate electrode is located at the middle part of the upper surface of insulating layer.
Preferably, in the step C, the solutions of organic semiconductors of 3 drop step B is taken to drip to flexible substrate 1 by pipettor
On, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively, described true
Empty drying box setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour, and organic semiconductor layer 4 obtained is used
Step instrument detects thickness；
In the step F, the polyimide solution of 3 drop step E is taken to drip to drain electrode 5 and source electrode by pipettor
On 6 organic semiconductor layer 4, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and difference
Rotation 50 seconds, the vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour；
In the step I, the dimethyl silicone polymer solution of 3 drop step H is taken to drip to gate electrode 2 by pipettor
On insulating layer 3, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively,
The vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour.
The present invention provides the processing method of top contact structure organic field effect tube, the top contact structure processed has
Field effect transistors contact resistance is smaller, and performance is more excellent, using the top contact form that electric property is more excellent, solves
It is difficult to prepare the problem of the excellent top contact structure organic field effect tube of electric property in conventional method；Simplify tradition
Electrode production process, pattern resolution is high, high production efficiency；The chemical industry that raw material is all derived from industrialization large-scale production produces
Product greatly reduce cost；The Graphene electrodes of preparation, which can meet in flexible circuit, wants the stress of electrode and bending strain
It asks, is advantageously implemented large area manufacture and extensive industrialization, further develop for organic integrated circuits and application provides newly
Scheme.
Detailed description of the invention
The present invention will be further described for attached drawing, but the content in attached drawing does not constitute any limitation of the invention.
Fig. 1 is the bottom gate top contact structure organic field effect tube flow process chart of the one of embodiment of the present invention；
Fig. 2 is the bottom gate top contact structure organic field effect tube structure chart of the one of embodiment of the present invention；
Fig. 3 is the top-gated top contact structure organic field effect tube flow process chart of the one of embodiment of the present invention；
Fig. 4 is the top-gated top contact structure organic field effect tube structure chart of the one of embodiment of the present invention.
Wherein: flexible substrate 1；Gate electrode 2；Insulating layer 3；Organic semiconductor layer 4；Drain electrode 5；Source electrode 6；Packaging protection
Layer 7；Laser-processing system 8.
Specific embodiment
To further illustrate the technical scheme of the present invention below with reference to the accompanying drawings and specific embodiments.
Embodiment one
The method by laser machining top contact structure organic field effect tube of the present embodiment, is used to prepare bottom gate top
Contact structures organic field effect tube, as shown in Figure 1, comprising the following steps:
Step A is cleaned to a thickness of 120 μm of flexible substrate 1 using cleanser, is then divided flexible substrate 1
At 3cm × 2cm, then respectively with acetone, ethyl alcohol and deionized water ultrasonic cleaning, then with being dried with nitrogen, and through surface plasma
Processing, makes the surface of flexible substrate 1 become hydrophilic；
Step B sets the machined parameters of gate electrode 2 for the parameter of laser-processing system 8 and processing graphic pattern is set as grid
The pattern of electrode 2, then laser-processing system 8 carries out laser treatment to the region of setting gate electrode 2 in flexible substrate 1, will
The skin layer in the region of flexible substrate 1 is changed into graphene, to prepare gate electrode 2 in flexible substrate 1；
Step C mixes dimethyl silicone polymer virgin rubber and curing agent according to volume ratio, then in magnetic agitation for 10:1
10min is stirred in device, and dimethyl silicone polymer solution is made；
Step D takes the dimethyl silicone polymer solution of step C to drip in the flexible substrate 1 with gate electrode 2, and uses
The dimethyl silicone polymer solution is equably spin-coated in the flexible substrate 1 by sol evenning machine, is then placed in vacuum oven
The insulating layer 3 with a thickness of 20 μm is prepared in middle solidification in the flexible substrate 1；
Step E, the organic semiconducting materials that will be enriched in carbon are mixed with dehydrated alcohol according to volume ratio for 5:1, and in magnetic force
10min is stirred in blender, and solutions of organic semiconductors is made；
Step F drips to the solutions of organic semiconductors of step E on the insulating layer 3 of step D, and will be described using sol evenning machine
Solutions of organic semiconductors is equably spin-coated on the insulating layer 3, is then placed in vacuum oven and is solidified, in the insulating layer
The organic semiconductor layer 4 with a thickness of 20 μm is prepared on 3；
Step G, according to the method for step B, on organic semiconductor layer 4 to setting drain electrode 5 and source electrode 6 region into
Row laser treatment, the regions transform by the setting drain electrode 5 of organic semiconductor layer 4 and source electrode 6 is graphene, thus organic
Drain electrode 5 and source electrode 6 are prepared on semiconductor layer 4；
Step H takes the dimethyl silicone polymer solution of step C to drip to the organic semiconductor with drain electrode 5 and source electrode 6
On layer 4, and the dimethyl silicone polymer solution is equably spin-coated on the organic semiconductor layer 4 using sol evenning machine, so
After be put into vacuum oven and solidify, packaging protection layer 7 is prepared on the organic semiconductor layer 4, so that bottom gate top be made
The organic field effect tube of contact structures, as shown in Figure 2.
The method by laser machining top contact structure organic field effect tube is used to prepare bottom gate top contact knot
Structure organic field effect tube, using flexible substrate 1 and rich in the organic semiconducting materials of carbon, using laser to flexible substrate 1
It is processed with organic semiconductor layer 4, reconstructs carbon, so that the organic matter for being processed part is directly translated into graphite
Alkene directly directly prepares gate electrode 2, drain electrode 5 and source electrode 6 in flexible substrate 1 and organic semiconductor layer 4.Electrode is straight
It connected organic semiconductor to be transformed, electrode and the contact of flexible substrate 1 are close, solve tradition and prepare by Multiple depositions
Contact resistance excessive problem when transistor.
The processing method for present embodiments providing bottom gate top contact structure organic field effect tube, first using laser processing
Flexible substrate 1 prepares gate electrode 2, then prepares drain electrode 5 and source electrode 6 with laser processing organic semiconductor layer 4, processes
Bottom gate top contact structure organic field effect tube contact resistance is smaller, and performance is more excellent, more excellent using electric property
Top contact form, solve that be difficult to prepare the excellent bottom gate top contact structure organic effect of electric property in conventional method brilliant
The problem of body pipe；Traditional electrode production process is simplified, pattern resolution is high, high production efficiency；Raw material is all derived from industry
The chemical products for changing large-scale production, greatly reduce cost；The Graphene electrodes of preparation can meet in flexible circuit to electrode
Stress and bending strain requirement, be advantageously implemented large area manufacture and extensive industrialization, be organic integrated circuits into one
Step development and application provide new scheme.
Preferably, the material of the flexible substrate 1 includes but is not limited to carbon containing polyimides (PI), polymethylacrylic acid
Methyl esters (PMMA), polycarbonate (PC) and polyethylene naphthalate (PEN).
In step B, the skin layer of flexible substrate 1 is changed into graphene by laser, is needed to control thickness, is not made flexible liner
Bottom 1 is destroyed.Kapton is changed into graphene using ultraviolet laser (wavelength 355nm) by laser-processing system 8, due to poly-
Acid imide is very high to the ultraviolet laser absorptivity that wavelength is 355nm, work polyimides is penetrated with infrared laser it is very strong different,
Ultraviolet laser can carry out retrofit to polyimides surface layer, lower to the thickness requirement of process substrate.According to experimental result,
Thickness for being converted into the polyimide substrate of graphene only needs about 5um.Due to being converted into volume expansion after graphene, through swashing
The graphene layer thickness of light processing is about 12um.So the thickness of flexible substrate 1 is than polyimide conversion thickness, it is at least big
In 5um.
Preferably, the organic semiconducting materials rich in carbon are polythiophene series polymer, such as poly- 3- hexyl thiophene
(P3HT) etc..Polythiophene series polymer is able to maintain stabilization in air, and has good water oxygen tolerance, and readily soluble
In organic solvent, it is suitable for spin coating proceeding.
Preferably, the laser-processing system 8 is picosecond ultraviolet laser machining system, and the laser-processing system 8 swashs
The a length of 355nm of light wave and pulsewidth are 10ps；
In the step B, the machined parameters of the gate electrode 2 are as follows: power duty cycle is 40% and laser scanning speed is
The pattern magnitude of 100mm/s, the gate electrode 2 are 10mm × 10mm, and the gate electrode 2 is located at the upper surface of flexible substrate 1
Middle part；
In the step G: being that 30% and laser are swept by the duty ratio that the parameter of laser-processing system 8 is set as laser power
Speed is retouched as 100mm/s, the pattern magnitude of drain electrode 5 and source electrode 6 is 10mm × 10mm, and drain electrode 5 and source electrode 6 are distinguished
Left and right edges positioned at the upper surface of organic semiconductor layer 4.
It, will be specific in flexible substrate 1 and organic semiconductor layer 4 by laser after the shape for designing electrode on computers
It is partially converted into graphene, to process required electrode, enormously simplifies processing step, and Graphene electrodes are by flexibility
4 direct transformation of substrate 1 and organic semiconductor layer, therefore solve the problems such as de- high contact resistance, layer, cracking, be conducive to
Improve the performance of bottom gate top contact structure organic field effect tube.
Preferably, in the step D, the dimethyl silicone polymer solution of 3 drop step C is taken to drip to grid by pipettor
In the flexible substrate 1 of electrode 2, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and difference
Rotation 50 seconds, the vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour；
In the step F, the solutions of organic semiconductors of 3 drop step E is taken to drip on the insulating layer 3 of step D by pipettor,
The sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively, and the vacuum is dry
Dry case setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour, and organic semiconductor layer 4 obtained uses step
Instrument detects thickness；
In the step H, the dimethyl silicone polymer solution of 3 drop step C is taken to drip to 5 He of drain electrode by pipettor
On the organic semiconductor layer 4 of source electrode 6, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min
And rotate 50 seconds respectively, the vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour.
Insulating layer 3 and the material of packaging protection layer 7 can also be polyimides (PI).
Preferably, a method of by laser machining top contact structure organic field effect tube, being used to prepare top-gated
Top contact structure organic field effect tube, as shown in Figure 3, comprising the following steps:
Step A is cleaned to a thickness of 120 μm of flexible substrate 1 using cleanser, is then divided flexible substrate 1
At 3cm × 2cm, then respectively with acetone, ethyl alcohol and deionized water ultrasonic cleaning, then with being dried with nitrogen, and through surface plasma
Processing, makes the surface of flexible substrate 1 become hydrophilic；
Step B, the organic semiconducting materials that will be enriched in carbon are mixed with dehydrated alcohol according to volume ratio for 5:1, and in magnetic force
10min is stirred in blender, and solutions of organic semiconductors is made；
Step C drips to the solutions of organic semiconductors of step B in flexible substrate 1, and uses sol evenning machine by described organic half
Conductor solution is equably spin-coated in the flexible substrate 1, is then placed in vacuum oven and is solidified, in the flexible substrate 1
On prepare organic semiconductor layer 4 with a thickness of 20 μm；
Step D sets the parameter of laser-processing system 8 to the machined parameters and processing graphic pattern of drain electrode 5 and source electrode 6
It is set as the pattern of drain electrode 5 and source electrode 6, then laser-processing system 8 is on organic semiconductor layer 4 to setting drain electrode 5
Laser treatment is carried out with the region of source electrode 6, the regions transform by the setting drain electrode 5 of organic semiconductor layer 4 and source electrode 6 is
Graphene, to prepare drain electrode 5 and source electrode 6 on organic semiconductor layer 4；
Polyimides virgin rubber and curing agent are mixed according to volume ratio for 5:1, are then stirred in magnetic stirring apparatus by step E
10min is mixed, polyimide solution is made；
Step F takes the polyimide solution of step E to drip to on drain electrode 5 and the organic semiconductor layer of source electrode 64,
And the polyimide solution is equably spin-coated on the organic semiconductor layer 4 using sol evenning machine, it is dry to be then placed in vacuum
Solidify in dry case, the insulating layer 3 with a thickness of 20 μm is prepared on the organic semiconductor layer 4；
Step G sets the machined parameters of gate electrode 2 for the parameter of laser-processing system 8 and processing graphic pattern is set as grid
The pattern of electrode 2, then laser-processing system 8 carries out laser treatment to the region of setting gate electrode 2 on the insulating layer 3, will be exhausted
The skin layer in the region of edge layer 3 is changed into graphene, to prepare gate electrode 2 on the insulating layer 3；
Step H mixes dimethyl silicone polymer virgin rubber and curing agent according to volume ratio, then in magnetic agitation for 10:1
10min is stirred in device, and dimethyl silicone polymer solution is made；
Step I takes the dimethyl silicone polymer solution of step H to drip on the insulating layer 3 with gate electrode 2, and using even
The dimethyl silicone polymer solution is equably spin-coated on the insulating layer 3 by glue machine, is then placed in vacuum oven solid
Change, prepares packaging protection layer 7 on the insulating layer 3, so that the organic field effect tube of top-gated top contact structure is made,
As shown in Figure 4.
The method by laser machining top contact structure organic field effect tube is used to prepare top-gated top contact knot
Structure organic field effect tube, using carbon containing insulating layer 3 and organic semiconductor layer 4, using laser to insulating layer 3 and organic half
Conductor layer 4 is processed, and carbon is reconstructed, so that the organic matter for being processed part is directly translated into graphene, directly
Gate electrode 2, drain electrode 5 and source electrode 6 are directly prepared on insulating layer 3 and organic semiconductor layer 4.Electrode directly passes through organic
Semiconductor is transformed, and electrode and the contact of organic semiconductor layer 4 are close, solves tradition by Multiple depositions and prepares transistor
When the excessive problem of contact resistance.
The processing method for present embodiments providing top-gated top contact structure organic field effect tube, first using laser processing
Organic semiconductor layer 4 prepares drain electrode 5 and source electrode 6, then prepares gate electrode 2 with laser processing insulating layer 3, processes
Top-gated top contact structure organic field effect tube contact resistance is smaller, and performance is more excellent, more excellent using electric property
Top contact form, solve that be difficult to prepare the excellent top-gated top contact structure organic effect of electric property in conventional method brilliant
The problem of body pipe；Traditional electrode production process is simplified, pattern resolution is high, high production efficiency；Raw material is all derived from industry
The chemical products for changing large-scale production, greatly reduce cost；The Graphene electrodes of preparation can meet in flexible circuit to electrode
Stress and bending strain requirement, be advantageously implemented large area manufacture and extensive industrialization, be organic integrated circuits into one
Step development and application provide new scheme.
Preferably, the material of the flexible substrate 1 includes but is not limited to carbon containing polyimides (PI), polymethylacrylic acid
Methyl esters (PMMA), polycarbonate (PC) and polyethylene naphthalate (PEN).
Preferably, the organic semiconducting materials rich in carbon are polythiophene series polymer, such as poly- 3- hexyl thiophene
(P3HT) etc..Polythiophene series polymer is able to maintain stabilization in air, and has good water oxygen tolerance, and readily soluble
In organic solvent, it is suitable for spin coating proceeding.
Preferably, the laser-processing system 8 is picosecond ultraviolet laser machining system, and the laser-processing system 8 swashs
The a length of 355nm of light wave and pulsewidth are 10ps；
In the step D: being that 30% and laser are swept by the duty ratio that the parameter of laser-processing system 8 is set as laser power
Speed is retouched as 100mm/s, the pattern magnitude of drain electrode 5 and source electrode 6 is 10mm × 10mm, and drain electrode 5 and source electrode 6 are distinguished
Left and right edges positioned at the upper surface of organic semiconductor layer 4；
In the step G, the machined parameters of the gate electrode 2 are as follows: power duty cycle is 40% and laser scanning speed is
The pattern magnitude of 100mm/s, the gate electrode 2 are 10mm × 10mm, and the gate electrode 2 is located in the upper surface of insulating layer 3
Portion.After the shape for designing electrode on computers, the specific part on organic semiconductor layer 4 and insulating layer 3 is turned by laser
Graphene is turned to, to process required electrode, enormously simplifies processing step, and Graphene electrodes are by organic semiconductor
Layer 4 and 3 direct transformation of insulating layer, therefore solve the problems such as de- high contact resistance, layer, cracking, be conducive to improve bottom gate
The performance of top contact structure organic field effect tube.
Preferably, in the step C, the solutions of organic semiconductors of 3 drop step B is taken to drip to flexible substrate 1 by pipettor
On, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively, described true
Empty drying box setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour, and organic semiconductor layer 4 obtained is used
Step instrument detects thickness；
In the step F, the polyimide solution of 3 drop step E is taken to drip to drain electrode 5 and source electrode by pipettor
On 6 organic semiconductor layer 4, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and difference
Rotation 50 seconds, the vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour；
In the step I, the dimethyl silicone polymer solution of 3 drop step H is taken to drip to gate electrode 2 by pipettor
On insulating layer 3, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively,
The vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour.The material of packaging protection layer 7
Material can also be polyimides (PI).
Embodiment two
The preparation method of the bottom gate top contact structure organic field effect tube of the present embodiment is as follows:
Step 1, as shown in Figure 1, choosing the polyimide film with a thickness of 120 μm as flexible substrate 1, cleanser pair is used
The flexible substrate 1 is cleaned, and flexible substrate 1 is then divided into 3cm × 2cm, then uses acetone, ethyl alcohol and deionization respectively
Water ultrasonic cleaning, then with being dried with nitrogen, and handled through surface plasma, so that the surface of flexible substrate 1 is become hydrophilic；
Step 2, the machined parameters of gate electrode 2 are set by the parameter of laser-processing system 8 and processing graphic pattern is set as grid
The pattern of electrode 2, the machined parameters of the gate electrode 2 are as follows: power duty cycle is 40% and laser scanning speed is 100mm/s,
The pattern magnitude of the gate electrode 2 is 10mm × 10mm, and the gate electrode 2 is located at the middle part of the upper surface of flexible substrate 1；
Step 3, laser-processing system 8 carries out laser treatment to the region of setting gate electrode 2 in flexible substrate 1, and controls
The thickness of laser processing is made, the skin layer in the region of flexible substrate 1 is only changed into graphene, does not destroy flexible substrate
1, gate electrode 2 is prepared in flexible substrate 1；
Step 4, dimethyl silicone polymer virgin rubber and curing agent are mixed according to volume ratio for 10:1, then in magnetic agitation
10min is stirred in device, and dimethyl silicone polymer solution is made；
Step 5, the dimethyl silicone polymer solution of 3 drop steps 4 is taken to drip to the flexible liner with gate electrode 2 by pipettor
On bottom 1, and the dimethyl silicone polymer solution is equably spin-coated in the flexible substrate 1 using sol evenning machine, sol evenning machine
The setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively；
Step 6, will through step 5, treated that sample is put into vacuum oven solidifies, vacuum degree is arranged in vacuum oven
For 0.1KPa, temperature be 60 DEG C and curing time is 1 hour, is prepared in the flexible substrate 1 with a thickness of 20 μm of insulating layers
3；
It step 7, is that 5:1 is mixed, and is stirred in magnetic stirring apparatus according to volume ratio with dehydrated alcohol by poly- 3- hexyl thiophene
10min is mixed, solutions of organic semiconductors is made；
Step 8, will by step 6, treated that sample is placed on the workbench of sol evenning machine, take 3 drop steps 7 with pipettor
In solutions of organic semiconductors drop face on the insulating layer 3, and using sol evenning machine by the solutions of organic semiconductors equably spin coating
On the insulating layer 3, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and rotates 50 respectively
Second；
Step 9, will through step 8, treated that sample is put into vacuum oven solidifies, vacuum degree is arranged in vacuum oven
For 0.1KPa, temperature be 60 DEG C and curing time is 1 hour, prepares the organic semiconductor with a thickness of 20 μm on the insulating layer 3
Layer 4, organic semiconductor layer 4 obtained detect thickness with step instrument；
Step 10, it is 30% and laser scanning that the parameter for adjusting laser-processing system 8, which is set as the duty ratio of laser power,
Speed is 100mm/s, and the pattern magnitude of drain electrode 5 and source electrode 6 is 10mm × 10mm, and drain electrode 5 and source electrode 6 distinguish position
Left and right edges in the upper surface of organic semiconductor layer 4；
Step 11, laser-processing system 8 carries out the region of setting drain electrode 5 and source electrode 6 on organic semiconductor layer 4
Laser treatment, the regions transform by the setting drain electrode 5 of organic semiconductor layer 4 and source electrode 6 are graphene, thus organic half
Drain electrode 5 and source electrode 6 are prepared in conductor layer 4；
Step 12, the dimethyl silicone polymer solution of 3 drop steps 4 is taken to drip to drain electrode 5 and source electricity by pipettor
On the organic semiconductor layer 4 of pole 6, and using sol evenning machine the dimethyl silicone polymer solution is equably spin-coated on described organic
On semiconductor layer 4, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively；
Step 13, will through step 12, treated that sample is put into vacuum oven solidifies, vacuum is arranged in vacuum oven
Degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour, prepares packaging protection layer on the organic semiconductor layer 4
7, so that the organic field effect tube of bottom gate top contact structure is made, as shown in Figure 2.
Embodiment three
The preparation method of the top-gated top contact structure organic field effect tube of the present embodiment is as follows:
Step 1, as shown in figure 3, choosing the polyimide film with a thickness of 120 μm as flexible substrate 1, cleanser pair is used
The flexible substrate 1 is cleaned, and flexible substrate 1 is then divided into 3cm × 2cm, then uses acetone, ethyl alcohol and deionization respectively
Water ultrasonic cleaning, then with being dried with nitrogen, and handled through surface plasma, so that the surface of flexible substrate 1 is become hydrophilic；
It step 2, is that 5:1 is mixed, and is stirred in magnetic stirring apparatus according to volume ratio with dehydrated alcohol by poly- 3- hexyl thiophene
10min is mixed, solutions of organic semiconductors is made；
Step 3, flexible substrate 1 is placed on the workbench of sol evenning machine, organic is partly led with what pipettor took in 3 drop steps 2
The solutions of organic semiconductors is equably spin-coated on the flexibility on flexible substrate 1, and using sol evenning machine by liquid solution drop
On substrate 1, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively；
Step 4, will through step 3, treated that sample is put into vacuum oven solidifies, vacuum degree is arranged in vacuum oven
For 0.1KPa, temperature be 60 DEG C and curing time is 1 hour, prepares in flexible substrate 1 and partly leads with a thickness of 20 μm organic
Body layer 4, organic semiconductor layer 4 obtained detect thickness with step instrument；
Step 5, the parameter of laser-processing system 8 is set as that the duty ratio of laser power is 30% and laser scanning speed is
The pattern magnitude of 100mm/s, drain electrode 5 and source electrode 6 is 10mm × 10mm, and drain electrode 5 and source electrode 6 are located at organic
The left and right edges of the upper surface of semiconductor layer 4；
Step 6, laser-processing system 8 carries out the region of setting drain electrode 5 and source electrode 6 on organic semiconductor layer 4
Laser treatment, the regions transform by the setting drain electrode 5 of organic semiconductor layer 4 and source electrode 6 are graphene, thus organic half
Drain electrode 5 and source electrode 6 are prepared in conductor layer 4；
Step 7, polyimides virgin rubber and curing agent are mixed according to volume ratio for 5:1, is then stirred in magnetic stirring apparatus
10min is mixed, polyimide solution is made；
Step 8, the polyimide solution of 3 drop steps 7 is taken to drip to having with drain electrode 5 and source electrode 6 by pipettor
On machine semiconductor layer 4, and the polyimide solution is equably spin-coated on the organic semiconductor layer 4 using sol evenning machine,
The sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively；
Step 9, will through step 8, treated that sample is put into vacuum oven solidifies, vacuum degree is arranged in vacuum oven
For 0.1KPa, temperature be 60 DEG C and curing time is 1 hour, is prepared on the organic semiconductor layer 4 with a thickness of 20 μm
Insulating layer 3；
Step 10, the parameter for adjusting laser-processing system 8 is set as the machined parameters of gate electrode 2 and processing graphic pattern is set as
The pattern of gate electrode 2, the machined parameters of the gate electrode 2 are as follows: power duty cycle is 40% and laser scanning speed is 100mm/
The pattern magnitude of s, the gate electrode 2 are 10mm × 10mm, and the gate electrode 2 is located at the middle part of the upper surface of insulating layer 3；
Step 11, laser-processing system 8 carries out laser treatment to the region of setting gate electrode 2 on the insulating layer 3, and controls
The skin layer in the region of insulating layer 3 is only changed into graphene by the thickness of laser processing, insulating layer 3 is not destroyed, exhausted
Gate electrode 2 is prepared in edge layer 3；
Step 12, dimethyl silicone polymer virgin rubber and curing agent are mixed according to volume ratio for 10:1, is then stirred in magnetic force
It mixes and stirs 10min in device, dimethyl silicone polymer solution is made；
Step 13, the dimethyl silicone polymer solution of 3 drop steps 4 is taken to drip to the insulation with gate electrode 2 by pipettor
On layer 3, and the dimethyl silicone polymer solution is equably spin-coated on the insulating layer 3 using sol evenning machine, sol evenning machine is set
Set low revolving speed be 400 revs/min, high revolving speed be 1000 revs/min and respectively rotate 50 seconds；
Step 14, will through step 13, treated that sample is put into vacuum oven solidifies, vacuum is arranged in vacuum oven
Degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour, prepares packaging protection layer on the organic semiconductor layer 4
7, so that the organic field effect tube of bottom gate top contact structure is made, as shown in Figure 4.
The technical principle of the invention is described above in combination with a specific embodiment.These descriptions are intended merely to explain of the invention
Principle, and shall not be construed in any way as a limitation of the scope of protection of the invention.Based on the explanation herein, the technology of this field
Personnel can associate with other specific embodiments of the invention without creative labor, these modes are fallen within
Within protection scope of the present invention.
Claims (6)
1. a kind of method by laser machining top contact structure organic field effect tube, is used to prepare bottom gate top contact structure
Organic field effect tube, which comprises the following steps:
Step A cleans the flexible substrate with a thickness of 120 μm using cleanser, then by flexible substrate be divided into 3cm ×
2cm then respectively with acetone, ethyl alcohol and deionized water ultrasonic cleaning, then with being dried with nitrogen, and is handled through surface plasma, is made
The surface of flexible substrate becomes hydrophilic；
Step B sets the machined parameters of gate electrode for the parameter of laser-processing system and processing graphic pattern is set as gate electrode
Pattern, then laser-processing system carries out laser treatment to the region of setting gate electrode on flexible substrates, by flexible substrate
The skin layer in the region is changed into graphene, to prepare gate electrode on flexible substrates；
Step C mixes dimethyl silicone polymer virgin rubber and curing agent according to volume ratio, then in magnetic stirring apparatus for 10:1
10min is stirred, dimethyl silicone polymer solution is made；
Step D takes the dimethyl silicone polymer solution of step C to drip in the flexible substrate with gate electrode, and uses sol evenning machine
The dimethyl silicone polymer solution is equably spin-coated in the flexible substrate, is then placed in vacuum oven and solidifies,
The insulating layer with a thickness of 20 μm is prepared in the flexible substrate；
Step E, the organic semiconducting materials that will be enriched in carbon are mixed with dehydrated alcohol according to volume ratio for 5:1, and in magnetic agitation
10min is stirred in device, and solutions of organic semiconductors is made；
Step F drips to the solutions of organic semiconductors of step E on the insulating layer of step D, and uses sol evenning machine by described organic half
Conductor solution is equably spin-coated on the insulating layer, is then placed in vacuum oven and is solidified, and is prepared on the insulating layer
Out with a thickness of 20 μm of organic semiconductor layer；
Step G carries out laser to the region of setting drain electrode and source electrode on organic semiconductor layer according to the method for step B
Processing, the regions transform by the setting drain electrode of organic semiconductor layer and source electrode is graphene, thus in organic semiconductor layer
On prepare drain electrode and source electrode；
Step H takes the dimethyl silicone polymer solution of step C to drip on the organic semiconductor layer with drain electrode and source electrode,
And the dimethyl silicone polymer solution is equably spin-coated on the organic semiconductor layer using sol evenning machine, it is then placed in true
Solidify in empty drying box, prepare packaging protection layer on the organic semiconductor layer, so that bottom gate top contact structure be made
Organic field effect tube；
The organic semiconducting materials rich in carbon are polythiophene series polymer；
The laser-processing system is picosecond ultraviolet laser machining system, and the optical maser wavelength of the laser-processing system is 355nm
And pulsewidth is 10ps；
In the step B, the machined parameters of the gate electrode are as follows: power duty cycle is 40% and laser scanning speed is 100mm/
The pattern magnitude of s, the gate electrode are 10mm × 10mm, and the gate electrode is located at the middle part of the upper surface of flexible substrate；
In the step G: being 30% and laser scanning speed by the duty ratio that the parameter of laser-processing system is set as laser power
Spending is 100mm/s, and the pattern magnitude of drain electrode and source electrode is 10mm × 10mm, and drain electrode and source electrode are located at organic
The left and right edges of the upper surface of semiconductor layer.
2. the method according to claim 1 by laser machining top contact structure organic field effect tube, feature
Be: the material of the flexible substrate is polyimides, polymethyl methacrylate, polycarbonate and poly- naphthalenedicarboxylic acid ethylene glycol
One of ester.
3. the method according to claim 1 by laser machining top contact structure organic field effect tube, feature
It is: in the step D, takes the dimethyl silicone polymer solution of 3 drop step C to drip to the flexibility with gate electrode by pipettor
On substrate, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively, institute
State vacuum oven setting vacuum degree be 0.1KPa, temperature is 60 DEG C and curing time is 1 hour；
In the step F, the solutions of organic semiconductors of 3 drop step E is taken to drip on the insulating layer of step D by pipettor, it is described
The sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively, the vacuum oven
Setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour, and organic semiconductor layer obtained is detected with step instrument
Thickness；
In the step H, the dimethyl silicone polymer solution of 3 drop step C is taken to drip to drain electrode and source electricity by pipettor
On the organic semiconductor layer of pole, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and difference
Rotation 50 seconds, the vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour.
4. a kind of method by laser machining top contact structure organic field effect tube, is used to prepare top-gated top contact structure
Organic field effect tube, which comprises the following steps:
Step A cleans the flexible substrate with a thickness of 120 μm using cleanser, then by flexible substrate be divided into 3cm ×
2cm then respectively with acetone, ethyl alcohol and deionized water ultrasonic cleaning, then with being dried with nitrogen, and is handled through surface plasma, is made
The surface of flexible substrate becomes hydrophilic；
Step B, the organic semiconducting materials that will be enriched in carbon are mixed with dehydrated alcohol according to volume ratio for 5:1, and in magnetic agitation
10min is stirred in device, and solutions of organic semiconductors is made；
Step C drips to the solutions of organic semiconductors of step B in flexible substrate, and uses sol evenning machine by the organic semiconductor
Solution is equably spin-coated in the flexible substrate, is then placed in vacuum oven and is solidified, and is prepared in the flexible substrate
Out with a thickness of 20 μm of organic semiconductor layer；
Step D sets the machined parameters of drain electrode and source electrode for the parameter of laser-processing system and processing graphic pattern is set as
The pattern of drain electrode and source electrode, then laser-processing system is on organic semiconductor layer to the area of setting drain electrode and source electrode
Domain carries out laser treatment, and the regions transform by the setting drain electrode of organic semiconductor layer and source electrode is graphene, thus having
Drain electrode and source electrode are prepared on machine semiconductor layer；
Polyimides virgin rubber and curing agent are mixed according to volume ratio for 5:1, are then stirred in magnetic stirring apparatus by step E
Polyimide solution is made in 10min；
Step F takes the polyimide solution of step E to drip on the organic semiconductor layer with drain electrode and source electrode, and uses
The polyimide solution is equably spin-coated on the organic semiconductor layer by sol evenning machine, is then placed in vacuum oven solid
Change, the insulating layer with a thickness of 20 μm is prepared on the organic semiconductor layer；
Step G sets the machined parameters of gate electrode for the parameter of laser-processing system and processing graphic pattern is set as gate electrode
Pattern, then laser-processing system carries out laser treatment to the region of setting gate electrode on the insulating layer, by the area of insulating layer
The skin layer in domain is changed into graphene, to prepare gate electrode on the insulating layer；
Step H mixes dimethyl silicone polymer virgin rubber and curing agent according to volume ratio, then in magnetic stirring apparatus for 10:1
10min is stirred, dimethyl silicone polymer solution is made；
Step I takes the dimethyl silicone polymer solution of step H to drip on the insulating layer with gate electrode, and uses sol evenning machine will
The dimethyl silicone polymer solution is equably spin-coated on the insulating layer, is then placed in vacuum oven and is solidified, in institute
It states and prepares packaging protection layer on insulating layer, so that the organic field effect tube of top-gated top contact structure be made；
The organic semiconducting materials rich in carbon are polythiophene series polymer；
The laser-processing system is picosecond ultraviolet laser machining system, and the optical maser wavelength of the laser-processing system is 355nm
And pulsewidth is 10ps；
In the step D: being 30% and laser scanning speed by the duty ratio that the parameter of laser-processing system is set as laser power
Spending is 100mm/s, and the pattern magnitude of drain electrode and source electrode is 10mm × 10mm, and drain electrode and source electrode are located at organic
The left and right edges of the upper surface of semiconductor layer；
In the step G, the machined parameters of the gate electrode are as follows: power duty cycle is 40% and laser scanning speed is 100mm/
The pattern magnitude of s, the gate electrode are 10mm × 10mm, and the gate electrode is located at the middle part of the upper surface of insulating layer.
5. the method according to claim 4 by laser machining top contact structure organic field effect tube, feature
Be: the material of the flexible substrate is polyimides, polymethyl methacrylate, polycarbonate and poly- naphthalenedicarboxylic acid ethylene glycol
One of ester.
6. the method according to claim 4 by laser machining top contact structure organic field effect tube, feature
It is: in the step C, takes the solutions of organic semiconductors of 3 drop step B to drip in flexible substrate by pipettor, the spin coating
The machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively, the vacuum oven setting
Vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour, and organic semiconductor layer obtained is detected thick with step instrument
Degree；
In the step F, the polyimide solution of 3 drop step E is taken to drip to having with drain electrode and source electrode by pipettor
On machine semiconductor layer, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and rotates 50 respectively
Second, the vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour；
In the step I, the dimethyl silicone polymer solution of 3 drop step H is taken to drip to the insulation with gate electrode by pipettor
On layer, the sol evenning machine setting slow-speed of revolution is 400 revs/min, high revolving speed is 1000 revs/min and is rotated 50 seconds respectively, described
Vacuum oven setting vacuum degree is 0.1KPa, temperature is 60 DEG C and curing time is 1 hour.
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