CN109755124A - A kind of glass firing process of silicon wafer - Google Patents
A kind of glass firing process of silicon wafer Download PDFInfo
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- CN109755124A CN109755124A CN201711057812.XA CN201711057812A CN109755124A CN 109755124 A CN109755124 A CN 109755124A CN 201711057812 A CN201711057812 A CN 201711057812A CN 109755124 A CN109755124 A CN 109755124A
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Abstract
The present invention provides a kind of glass firing process of silicon wafer, including successively carrying out pre-fired and firing to the silicon wafer after coating glass slurry, pre-fired includes: the first step, silicon wafer is warming up to 100-300 DEG C and is kept for a period of time, silicon wafer is warming up to 500-600 DEG C and is kept for a period of time by second step, firing includes: the first step, silicon wafer is warming up to 600-700 DEG C and is kept for a period of time, and silicon wafer is warming up to 750-850 DEG C and is kept for a period of time by second step.The glass firing process can effectively control the glass sintering process of silicon wafer, prevent temperature-rise period control is improper from making glass indefinite form in sintering process, and glass flow to electrode surface surface in slot, influence the appearance of semiconductor material and influence the progress of subsequent technique.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly, to a kind of glass firing process of silicon wafer.
Background technique
With the rapid development of semicon industry, semi-conductor silicon chip production capacity expands increasingly.With the development of semiconductor technology,
Requirement to semiconductor surface passivation is higher and higher, as passivating material, should have good electric property, reliability, good
Chemical stability, operability and economy.According to above-mentioned requirements, semiconductor passivation special glass is more managed as one kind
The semiconductor passivation material thought starts to apply in semicon industry.Glassivation is that glass paste is coated to silicon slice corrosion slot
On interior, then through sintering process, the adhesive in glass paste is burnt up at high temperature, and tie glass powder on silicon wafer
Surface on formed seal protection layer process.
Firing in glassivation is important a step, and firing makes glass powder become glass solid-state to silicon wafer from pulverulence
Surface forms protective layer, and the control of sintering process will have a direct impact on the compactness extent of finally obtained glass, glass grid structure
Integrated degree, to directly affect the performance of semiconductor.In the prior art glassivation process to the technique of firing not into
Silicon wafer is directly warming up to high temperature sintering by the good control of row, and the organic matter of different burning points and adhesive are violent in glass paste
Burning generates localized heat release, keeps the surface passivation effect of silicon wafer bad, the performance of the semiconductor material influenced.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of glass firing process of silicon wafer, to the process of the glass firing of silicon wafer
It is controlled, the product appearance and performance after guaranteeing firing are more preferable.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of glass firing process of silicon wafer, including
Pre-fired and firing successively carried out to the silicon wafer after coating glass slurry, pre-fired includes: the first step, silicon wafer is warming up to 100-
300 DEG C and keep a period of time, second step, by silicon wafer by 100-300 DEG C be warming up to 500-600 DEG C and keep a period of time, burn
At include: the first step, by silicon wafer by 500-600 DEG C be warming up to 600-700 DEG C and keep a period of time, second step, by silicon wafer by
600-700 DEG C is warming up to 750-850 DEG C and is kept for a period of time.
In technical solution, it is preferred that be passed through oxygen during pre-fired.
In technical solution, it is preferred that be passed through oxygen during firing.
In technical solution, it is preferred that keep 10- after silicon wafer is warming up to 100-300 DEG C in the first step in pre-fired
30min。
In technical solution, it is preferred that after silicon wafer is warming up to 500-600 DEG C by 100-300 DEG C in second step in pre-fired
Keep 10-30min.
In technical solution, it is preferred that firing further includes third step, silicon wafer is cooled to 500-600 DEG C simultaneously by 750-850 DEG C
Kept for a period of time.
In technical solution, it is preferred that rate of temperature fall is 2-3 DEG C/min in third step.
In technical solution, it is preferred that protected after silicon wafer is warming up to 600-700 DEG C by 500-600 DEG C in the first step in firing
Hold 10-20min.
In technical solution, it is preferred that protected after silicon wafer is warming up to 750-850 DEG C by 600-700 DEG C in second step in firing
Hold 10-20min.
The advantages and positive effects of the present invention are: the glass that the glass firing process can effectively control silicon wafer is burnt
At process, prevent temperature-rise period control is improper from making glass indefinite form in sintering process, glass flow to electrode surface surface, shadow in slot
It rings the appearance of semiconductor material and influences the progress of subsequent technique, product appearance is qualified after firing process firing, electrode surface
Without glass point, glass glossy clear, complete, electrical parameter qualification in groove.
Detailed description of the invention
Fig. 1 is the outside drawing using the silicon wafer obtained after existing firing technology.
Fig. 2 is the outside drawing using the silicon wafer obtained after existing firing technology (under 300 power microscopes).
Fig. 3 is the outside drawing using the silicon wafer obtained after existing firing technology (under 300 power microscopes).
Fig. 4 is the outside drawing for the silicon wafer that firing process obtains in embodiment one (under 100 power microscopes).
Fig. 5 is the outside drawing for the silicon wafer that firing process obtains in embodiment two (under 100 power microscopes).
Fig. 6 is the outside drawing for the silicon wafer that firing process obtains in embodiment three (under 100 power microscopes).
Specific embodiment
Firing in the glassivation of silicon wafer is important a step, and firing makes glass powder become glass solid-state from pulverulence
Protective layer is formed to silicon chip surface, the control of sintering process will have a direct impact on compactness extent, the glass web of finally obtained glass
The integrated degree of lattice structure, to directly affect the performance of semiconductor.In the prior art glassivation process to firing process not
It is controlled, silicon wafer is directly warming up to high temperature sintering, glass paste is become into glassy state from powder, heating is too fast to make glass paste
The organic matter and adhesive vigorous combustion of different burning points, generate localized heat release in material；And lead to glass indefinite form, glass meeting in slot
It is flow to electrode surface surface (as shown in Figure 1, Figure 2, the silicon wafer appearance that Fig. 3 obtains for existing firing technology), makes the surface passivation of silicon wafer
Effect is bad, and finishing operations are affected, the performance of the semiconductor material influenced.
To solve this problem, the present invention provides a kind of glass firing process of silicon wafer, including to coating glass slurry after
Silicon wafer successively carry out pre-fired and firing, pre-fired includes: the first step, silicon wafer is warming up to 100-300 DEG C and is kept for one section
Silicon wafer is warming up to 500-600 DEG C by 100-300 DEG C and is kept for a period of time by time, second step, and firing includes: the first step, incites somebody to action
Silicon wafer is warming up to 600-700 DEG C by 500-600 DEG C and is kept for a period of time, and silicon wafer is warming up to by second step by 600-700 DEG C
750-850 DEG C and keep a period of time.
Silicon wafer is warming up at a temperature of 100-300 DEG C and is kept certain time by pre-fired, due to including in glass paste
Glass powder and the organic solvent for diluting glass powder, there are also some organic impurities such as cellulose etc., the combustion of these organic matters
Point is lower, generally at 100-300 DEG C；If being directly warming up to higher sintering temperature, without control, temperature is too high to make this
A little burning point lower organic matter moments burn, the glass powder redistribution in slot in glass paste, and subsequent firing temperature 600-700
It DEG C is the softening process of glass powder；Glass powder redistribution and glass powder soften the too compact of the two processes linking, lead to glass
Glass indefinite form makes the glass in groove flow to the surface of electrode, seriously affects the appearance and electrical property of silicon wafer.And pre-fired walks
Suddenly, the burning point that silicon wafer is warming up to general organic matter first can be kept into certain time, be then gradually warmed up again, it will be in glass paste
Organic solvent and organic impurities uniformly burn and remove under the pre-fired stage, the ingredient in glass paste only be left glass
Then powder rises to the higher firing temperature of temperature again, product appearance is qualified after firing, i.e. electrode surface is without glass point, glass in groove
Glass glossy clear, complete, electrical parameter is also qualified.
Preferred scheme is constantly passed through oxygen, the mistake of pre-fired and firing during pre-fired and firing thereto
Cheng Zhong, with the process of organic compound combustion, the oxygen in firing furnace can be consumed constantly, can be made after oxygen concentration is too low organic
The burning of object is insufficient, causes organic matter that can not be removed or generate the insufficient by-product of some burnings in the pre-fired stage
Organic compound combustion is abundant during being constantly passed through the certifiable silicon wafer pre-fired of oxygen in object, pre-fired and sintering process, organic matter
Adequately removed.
In preferred scheme, silicon wafer is first warming up to 100-300 DEG C in the first step in pre-fired and keeps 10-30min.
In preferred scheme, silicon wafer is warming up to 500-600 DEG C by 100-300 DEG C in second step in pre-fired and is kept
10-30min。
In preferred embodiment, firing further includes third step, silicon wafer is cooled to 500-600 DEG C by 750-850 DEG C and keeps one
The section time.It is furthermore preferred that rate of temperature fall is 2-3 DEG C/min in third step.The control of temperature descending section after increasing to silicon wafer firing,
The problems such as quenching when can prevent silicon wafer from cooling down, internal stress crosses the destructurized of ambassador's silicon wafer, fragment occurs.
In preferred embodiment, 10- is kept after silicon wafer is warming up to 600-700 DEG C by 500-600 DEG C in the first step in firing
20min。
In preferred embodiment, 10- is kept after silicon wafer is warming up to 750-850 DEG C by 600-700 DEG C in second step in firing
20min。
Description of specific embodiments of the present invention combined with specific embodiments below:
Embodiment one
Firing process described in the present embodiment includes:
1. entering furnace.The quartz boat of silicon wafer after printing will be loaded, is put into quartzy nozzle, preheats 5-10min；Being hooked with quartz will
Quartz boat is slowly pushed into flat-temperature zone, covers quartz cap；
2. pre-fired.It controls furnace temperature and is warming up to 100 DEG C with the rate of 2 DEG C/min, then keep 20min at 100 DEG C；So
500 DEG C are warming up to the rate of 2 DEG C/min afterwards, and keeps constant temperature 20min；
3. firing.It controls furnace temperature and is warming up to 600 DEG C by 500 DEG C with the rate of 2 DEG C/min, and keep constant temperature 20min, then
750 DEG C of holding 20min are warming up to by 600 DEG C, are then cooled to 500 DEG C with the rate of 2 DEG C/min, and keep 20min；
4. coming out and cooling down.Time removes quartz cap after, is hooked with quartz quartz boat being slowly pulled to fire door, and in quartz ampoule
The cooling 5-10min of mouth；
5. being detected after firing.The inspection of electrical property, appearance and groove width is carried out after glass firing.
As shown in figure 4, the appearance shape that the product to be obtained using the firing process is observed under 100 times of microscope
Looks, it can be seen that glass glossy clear in the product surface groove, complete, it is pre- not influence later process without glass for electrode surface
Freeze effect, and product appearance and electrical parameter are all qualified.
Embodiment two
Firing process described in the present embodiment includes:
1. entering furnace.The quartz boat of silicon wafer after printing will be loaded, is put into quartzy nozzle, preheats 5-10min；Being hooked with quartz will
Quartz boat is slowly pushed into flat-temperature zone, covers quartz cap；
2. pre-fired.It controls furnace temperature and is warming up to 300 DEG C with the rate of 3 DEG C/min, then keep 10min at 300 DEG C；So
600 DEG C are warming up to the rate of 3 DEG C/min afterwards, and keeps constant temperature 10min；
3. firing.It controls furnace temperature and is warming up to 700 DEG C by 600 DEG C with the rate of 3 DEG C/min, and keep constant temperature 10min, then
850 DEG C of holding 20min are warming up to, are then cooled to 600 DEG C with the rate of 3 DEG C/min, and keep 20min；
4. coming out and cooling down.Time removes quartz cap after, is hooked with quartz quartz boat being slowly pulled to fire door, and in quartz ampoule
The cooling 5-10min of mouth；
5. being detected after firing.The inspection of electrical property, appearance and groove width is carried out after glass firing.
As shown in figure 5, the appearance shape that the product to be obtained using the firing process is observed under 100 times of microscope
Looks, it can be seen that glass glossy clear in the product surface groove, complete, it is pre- not influence later process without glass for electrode surface
Freeze effect, and product appearance and electrical parameter are all qualified.
Embodiment three
Firing process described in the present embodiment includes:
1. entering furnace.The quartz boat of silicon wafer after printing will be loaded, is put into quartzy nozzle, preheats 5-10min；Being hooked with quartz will
Quartz boat is slowly pushed into flat-temperature zone, covers quartz cap；
2. pre-fired.It controls furnace temperature and is warming up to 250 DEG C with the rate of 2 DEG C/min, then keep 20min at 250 DEG C；So
550 DEG C are warming up to the rate of 2 DEG C/min afterwards, and keeps constant temperature 20min；
3. firing.It controls furnace temperature and is warming up to 680 DEG C by 550 DEG C with the rate of 2 DEG C/min, and keep constant temperature 20min, then
800 DEG C of holding 20min are warming up to, are then cooled to 550 DEG C with the rate of 2 DEG C/min, and keep 20min；
4. coming out and cooling down.Time removes quartz cap after, is hooked with quartz quartz boat being slowly pulled to fire door, and in quartz ampoule
The cooling 5-10min of mouth；
5. being detected after firing.The inspection of electrical property, appearance and groove width is carried out after glass firing.
As shown in fig. 6, the appearance shape that the product to be obtained using the firing process is observed under 100 times of microscope
Looks, it can be seen that glass glossy clear in the product surface groove, complete, it is pre- not influence later process without glass for electrode surface
Freeze effect, and product appearance and electrical parameter are all qualified.
Several embodiments of the present invention are described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (9)
1. a kind of glass firing process of silicon wafer, it is characterised in that: pre- including successively being carried out to the silicon wafer after coating glass slurry
Firing and firing, the pre-fired include: the first step, silicon wafer are warming up to 100-300 DEG C and is kept for a period of time, second step,
The silicon wafer is warming up to 500-600 DEG C by 100-300 DEG C and is kept for a period of time, the firing includes: the first step, will be described
Silicon wafer is warming up to 600-700 DEG C by 500-600 DEG C and is kept for a period of time, and second step heats up the silicon wafer by 600-700 DEG C
To 750-850 DEG C and kept for a period of time.
2. glass firing process according to claim 1, it is characterised in that: be passed through oxygen during the pre-fired
Gas.
3. glass firing process according to claim 1 or 2, it is characterised in that: be passed through oxygen during the firing
Gas.
4. glass firing process according to claim 1 to 3, it is characterised in that: will in the first step in the pre-fired
The silicon wafer keeps 10-30min after being warming up to 100-300 DEG C.
5. glass firing process according to claim 1 to 4, it is characterised in that: will in second step in the pre-fired
The silicon wafer keeps 10-30min after being warming up to 500-600 DEG C by 100-300 DEG C.
6. -5 any glass firing process according to claim 1, it is characterised in that: the firing further include third step,
The silicon wafer is cooled to 500-600 DEG C by 750-850 DEG C and is kept for a period of time.
7. glass firing process according to claim 6, it is characterised in that: in the third step rate of temperature fall be 2-3 DEG C/
min。
8. -7 any glass firing process according to claim 1, it is characterised in that: by institute in the first step in the firing
It states after silicon wafer is warming up to 600-700 DEG C by 500-600 DEG C and keeps 10-20min.
9. -8 any glass firing process according to claim 1, it is characterised in that: by institute in second step in the firing
It states after silicon wafer is warming up to 750-850 DEG C by 600-700 DEG C and keeps 10-20min.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711057812.XA CN109755124A (en) | 2017-11-01 | 2017-11-01 | A kind of glass firing process of silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711057812.XA CN109755124A (en) | 2017-11-01 | 2017-11-01 | A kind of glass firing process of silicon wafer |
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Citations (4)
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|---|---|---|---|---|
| CN101038892A (en) * | 2007-04-25 | 2007-09-19 | 天津中环半导体股份有限公司 | Knife scraping method glass passivation process for silicon current rectifier |
| CN104599963A (en) * | 2015-01-15 | 2015-05-06 | 苏州启澜功率电子有限公司 | Table chip double side electrophoresis glass passivation technology |
| JP2015182930A (en) * | 2014-03-25 | 2015-10-22 | 京セラ株式会社 | heat exchange member |
| US20160254418A1 (en) * | 2004-06-03 | 2016-09-01 | Lumileds Llc | Luminescent ceramic for a light emitting device |
-
2017
- 2017-11-01 CN CN201711057812.XA patent/CN109755124A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160254418A1 (en) * | 2004-06-03 | 2016-09-01 | Lumileds Llc | Luminescent ceramic for a light emitting device |
| CN101038892A (en) * | 2007-04-25 | 2007-09-19 | 天津中环半导体股份有限公司 | Knife scraping method glass passivation process for silicon current rectifier |
| JP2015182930A (en) * | 2014-03-25 | 2015-10-22 | 京セラ株式会社 | heat exchange member |
| CN104599963A (en) * | 2015-01-15 | 2015-05-06 | 苏州启澜功率电子有限公司 | Table chip double side electrophoresis glass passivation technology |
Non-Patent Citations (1)
| Title |
|---|
| 唐省吾等: "玻璃钝化实体封装技术与玻封二极管", 《黑龙江大学自然科学学报》 * |
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