CN109752926B - Method for compensating lens thermal effect - Google Patents
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- CN109752926B CN109752926B CN201711059863.6A CN201711059863A CN109752926B CN 109752926 B CN109752926 B CN 109752926B CN 201711059863 A CN201711059863 A CN 201711059863A CN 109752926 B CN109752926 B CN 109752926B
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Abstract
The invention provides a method for compensating the thermal effect of a lens, which comprises the following steps: comparing the information of the product to be exposed with the stored product information to determine whether the product to be exposed meets a preset condition; if the preset condition is met, directly calling the stored lens thermal effect compensation parameter for exposure; and if the preset condition is not met, calculating the current lens thermal compensation parameter of the product to be exposed, and storing the current lens thermal compensation parameter into an internal database. The method of the invention independently configures and compensates the compensation parameters of different machines, and calls different compensation parameters aiming at different product programs corresponding to a single machine, thereby achieving the purpose of accurate compensation.
Description
Technical Field
The invention relates to the field of exposure machines, in particular to a method for compensating a thermal effect of a lens.
Background
For the ASML PAS5500 series exposure machine, the Lens Heating effect during the exposure process is a problem which exists all the time and is a problem which often causes troubles in the actual production, and the Lens Heating effect not only causes Focus (Focus) shift, but also causes Overlay accuracy (Overlay) shift.
The machine station with the problem in actual production is mainly an I-Line exposure machine, namely a machine type with 365nm ultraviolet light as a light source. The actual light intensity of the machine type is generally 3500mW/cm2And the average energy required for production is 200mJ/cm2High even up to 400mJ/cm2However, the calibration design of the current machine itself is difficult to compensate the rapid thermal effect, so that defocusing (Defocus) or Overlay magnification (Overlay magnification) drift of the product can be caused, the product is defective, and the good effect is affectedAnd (4) rate.
It is therefore necessary to provide a method that can compensate for the thermal effects of the lens.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
To overcome the problems presented, one aspect of the present invention provides a method for compensating for thermal effects of a lens, comprising the steps of:
comparing the information of the product to be exposed with the stored product information to determine whether the product to be exposed meets a preset condition;
if the preset condition is met, directly calling the stored lens thermal effect compensation parameter for exposure;
and if the preset condition is not met, calculating the current lens thermal compensation parameter of the product to be exposed, and storing the current lens thermal compensation parameter into an internal database.
Further, the step of calculating the current lens thermal compensation parameter of the product to be exposed comprises:
performing a reflectivity correction step to calculate a reflectivity correction value of the product to be exposed;
measuring a focus offset value and a magnification offset value of the lens before and after exposure; and
calculating the current lens thermal compensation parameter based on the reflectance correction value, the focus offset value, and the magnification offset value.
Further, wherein the reflectivity correction step comprises:
measuring the actual penetration rate of the photomask;
exposing by adopting standard compensation parameters of a machine;
calculating the quantity of exposure patterns of each wafer;
calculating the number of the exposed wafers;
calculating the actual exposure time of the lens;
measuring the actual reflectivity of the wafer;
and calculating the reflectivity correction value of the wafer.
Further, the step of measuring a focus offset value and a magnification offset value of the lens before and after exposure comprises:
measuring an intrinsic focus value and an intrinsic magnification value of the lens before exposure;
measuring an actual focus value and an actual magnification value of the exposed lens; and
comparing the actual focus value to the intrinsic focus value, and comparing the actual magnification value to the intrinsic magnification value to calculate a focus offset value and a magnification offset value for the post-exposure lens.
In one embodiment of the present invention, the preset conditions include: the IDs of the light covers are the same; and the energy in the product formula does not differ by more than 10%; the same aperture size and angle of incidence as in the product format.
In one embodiment of the invention, the factors determining the magnitude of the energy include: exposure dose; the light transmittance of the mask plate; setting a shutter; setting an aperture and an incidence angle; the reflectivity of the surface of the wafer; the number of exposure patterns for a single wafer and the number of wafers participating in exposure.
In one embodiment of the invention, the step of comparing the information of the product to be exposed with the stored product information is performed by a server.
In one embodiment of the present invention, the step of calculating the current lens thermal compensation parameter of the product to be exposed is performed by an aligner system.
In one embodiment of the present invention, the step of measuring the intrinsic focus value and the intrinsic magnification value of the pre-exposure lens and the step of measuring the actual focus value and the actual magnification value of the post-exposure lens are performed by an image sensor.
In one embodiment of the invention, the image sensor runs a focal plane test method.
The method of the invention independently configures and compensates the compensation parameters of different machines, and calls different compensation parameters aiming at different product programs corresponding to a single machine, thereby achieving the purpose of accurate compensation.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings:
FIG. 1 is a flow chart of the steps of a test algorithm according to the present invention; and
FIG. 2 is a block diagram of an exemplary test circuit for implementing the test algorithm of the present invention, according to one embodiment of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" …, "adjacent to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relationship terms such as "under …", "under …", "below", "under …", "above …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
For the above problems, the exposure machine manufacturers mostly use a method of advance compensation according to the relationship of focus and magnification with time caused by the thermal effect of the lens.
The method for the advance compensation comprises the following steps of rough compensation and fine compensation:
coarse compensation: exposing the wafer with the standard photoresist for 2 hours under the condition that the shutter is completely opened and the photomask is not suitable for the exposure, then cooling the lens for 2 hours, measuring the focus and the magnification drift by using an image sensor, and calculating the parameters to be compensated by a formula and recording the parameters into a system of a machine station. The rough compensation mode only selects a standard NA/Sigma (aperture and incident angle) setting for measurement, the generated parameters are recorded in the system, and the corresponding parameters are called to perform lens thermal compensation during each exposure.
Fine compensation: the lens thermal compensation parameters in this case were calculated by exposing the wafer with photoresist to a high transmittance (typically greater than 80%) mask with the shutter fully open for 2 consecutive hours at standard energy, then allowing the lens to cool for 2 hours, and then measuring the wafer. 3-5 compensation parameters of different NA/Sigma can be stored in the machine table system, and the corresponding compensation parameters are called to carry out lens thermal compensation during each exposure.
The method for storing the parameters of the machine in advance by using different NA/Sigma settings in a pre-calibration mode is a mode commonly used by most of the existing 200mm machine manufacturers and can be called as a pre-compensation method. This pre-compensation method has its limitations and is suitable for use in a manufacturing plant where the product is relatively single.
Since the transmittance and the reflectivity of the photoresist are different for different product masks, the influence of the lens thermal effect is also different, so that the method cannot perform precise compensation. For manufacturers with complex product structures, the problem of focus and power drift due to lens thermal effects is often encountered with this approach.
Therefore, the invention provides a lens thermal compensation method, as shown in fig. 1, which specifically comprises the following steps:
step S100: and comparing the information of the product to be exposed with the stored product information to determine whether the product to be exposed meets the preset condition. If yes, processing according to the existing product, and turning to the step S200; if not, processing proceeds to step S300 as a new product.
Specifically, prior to running, the EAP computer sends a product program (recipe) to the server, which compares the product program with product information stored in an internal database. Herein, "running" refers to exposing a product with an exposure machine.
Wherein the preset conditions may include: 1. the IDs of the light covers are the same; and 2. the Energy (Energy) values in the product formula differ by no more than 10%; and 3. the NA/Sigma (aperture and angle of incidence) values in the equation are the same.
The factors for determining the Energy value mainly include: exposure dose; transmittance of a mask (Reticle); setting of a shutter (REMA); setting of NA/Sigma (aperture and angle of incidence) of the lens; the reflectivity of the surface of the wafer; the number of exposure patterns (shots) for a single wafer and the number of wafers participating in the exposure. The main determining factors of the reflectivity of the wafer surface include: photoresist type, wafer thickness, substrate type and composition, etc.
Step S200: and directly calling the lens thermal compensation parameters stored in the internal database to perform exposure.
Step S300: and calculating the current lens thermal compensation parameters of the product to be exposed, and storing the calculated lens thermal compensation parameters into an internal database.
Specifically, the above steps S200 and S300 may be performed by the server calling the aligner system.
As shown in fig. 2, the lens thermal compensation parameter calculation may include the following steps:
step S310: the reflectivity correction step is performed to calculate a reflectivity correction value (Cf) for the product to be exposed. Specifically, the method comprises the following steps:
a. measuring the actual penetration rate of the photomask;
b. exposing by adopting standard compensation parameters of a machine;
c. calculating the quantity of exposure patterns of each wafer;
d. calculating the number of the exposed wafers;
e. calculating the actual exposure time of the lens;
f. measuring the actual reflectivity of the wafer;
g. calculating the reflectivity correction value Cf of the wafer by adopting the following formula:
wherein, mu1Ref、μ2RefFor reference of the compensation parameter, mu1Resist、μ2ResistIs the actual compensation parameter.
In this case, the actual transmittance of the mask can be measured by measuring the ratio of the light intensity before and after passing through the mask. For example, a transmittance gauge, as known in the art, disposed on the stage may be used to measure the actual transmittance of the reticle.
Therein, the actual reflectivity of the wafer may be measured, for example, using a reflectivity meter known in the art disposed on the stage.
Step S320: the focus offset value Δ F and the magnification offset value Δ Mg of the lens before and after exposure were measured.
Specifically, the following steps may be included:
a. measuring the intrinsic focus value F of the pre-exposure lens0And intrinsic magnification value Mg0。
For example, the tool's own image sensor (Ima) may be utilized prior to wafer exposurege Sensor, IS) running a Focal test to measure the intrinsic focus value F of the lens0And intrinsic magnification value Mg0。
b. The actual focus value Ft and the actual magnification value Mgt of the post-exposure lens are measured.
Illustratively, the actual focus value Ft and the actual magnification value Mgt of the lens may be measured after exposure of a plurality of consecutive (e.g., 25) wafers is completed by running a Focal test with the image sensor of the machine station itself. Specifically, the actual focus value Ft and the actual magnification value Mgt after exposure are calculated by performing simulated exposure at different heights up and down using Mark (a special Mark pattern) on IS to find the best focus plane.
c. The focus offset value Δ F and the magnification offset value Δ Mg of the lens after exposure are calculated.
In particular, the actual focus value Ft and the intrinsic focus value F of the lens can be related0Comparing to calculate a focus offset value Δ F; the actual power value Mgt and the intrinsic power value Mg of the lens can be compared0Comparison is performed to calculate the magnification shift value Δ Mg.
Step S330: and calculating the lens thermal compensation parameter of the product based on the reflectivity correction value Cf, the focus offset value delta F and the magnification offset value delta Mg.
Specifically, the lens thermal compensation parameter can be calculated according to the following formula.
Wherein the focus compensation parameter of the lens is calculated by the following formula:
F0＝A1+A2＝T*S*I*(μ1+μ2)；
ΔF＝Ft-F0＝T*S*I*Cf*[μ1(1-exp(-t/τ1))+μ2(1-exp(-t/τ2))]；
Ft＝1*10-5*Nw*Nd*D*T*S*Cf*(μ1+μ2)/t，
wherein A1 and A2 are light amplitudes in μm or ppm; t is mask penetration (%); s is the effective area of the photomask, and the unit is cm2(ii) a I is light intensity in W/m2；μ1、μ2Is a conversion coefficient, and has the unit of μm/W or ppm/W; cf the surface reflectivity of the wafer; t is the total exposure time in seconds(s); tau is1、τ2Is a time constant in units of s; nw is the number of exposed wafers; nd is the number of exposure patterns of a single wafer; d is exposure energy in mJ/cm2。
Wherein the magnification compensation parameter of the lens is calculated by the following formula:
Mg0＝A1+A2＝T*S*I*(μ1+μ2)；
ΔMg＝Ft-F0＝T*S*I*Cf*[μ1(1-exp(-t/τ1))+μ2(1-exp(-t/τ2))]；
Mgt＝1*10-5*Nw*Nd*D*T*S*Cf*(μ1+μ2)/t，
wherein A1 and A2 are light amplitudes in μm or ppm; t is mask penetration (%); s is the effective area of the photomask, and the unit is cm2(ii) a I is light intensity in W/m2；μ1、μ2Is a conversion coefficient, and has the unit of μm/W or ppm/W; cf the surface reflectivity of the wafer; t is the total exposure time in seconds(s); tau is1、τ2Is a time constant in units of s; nw is the number of exposed wafers; nd is the number of exposure patterns of a single wafer; d is exposure energy in mJ/cm2。
Wherein, mu1、μ2And τ1、τ2I.e. the compensation parameter to be measured and stored. However, long-term practical measurement and observation show that tau under different conditions1、τ2The compensating effect on the thermal effect of the lens is only slightly affected, so in this context it is possible for the server to invoke τ automatically1、τ2And the internal parameters of the machine station nearest to the incident angle and the aperture participate in compensation calculation.
According to the focus and magnification drift formula caused by lens heat effect, analysis and calculation software can be installed on the server, and every time data is stored in a tabulated manner according to the ID of the product, a new internal network communication protocol is established, so that the server can communicate with an EAP computer and a register system, the server can call the system parameters and programs of the machine, and can also send instructions to the machine, the machine can execute calibration measurement, the calculation of the whole data is completed, and the compensation parameter value is sent to the machine, so that the compensation is completed.
The invention has the beneficial effects that:
the method of the invention independently configures and compensates the compensation parameters of different machines, and calls different compensation parameters aiming at different product programs corresponding to a single machine, thereby achieving the purpose of accurate compensation.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A method for compensating for thermal effects of a lens, comprising the steps of:
comparing the information of the product to be exposed with the stored product information to determine whether the product to be exposed meets a preset condition;
if the preset condition is met, directly calling the stored lens thermal effect compensation parameter for exposure;
if the preset condition is not met, calculating the current lens thermal compensation parameter of the product to be exposed and storing the current lens thermal compensation parameter into an internal database,
wherein the preset conditions include:
the IDs of the light covers are the same; and
the energy difference in the product program is not more than 10%; and
the aperture size and the incident angle in the product program are the same.
2. The method of claim 1, wherein said step of calculating current lens thermal compensation parameters for said product to be exposed comprises:
performing a reflectivity correction step to calculate a reflectivity correction value of the product to be exposed;
measuring a focus offset value and a magnification offset value of the lens before and after exposure; and
calculating the current lens thermal compensation parameter based on the reflectance correction value, the focus offset value, and the magnification offset value.
3. The method of claim 2, wherein the reflectivity modification step comprises:
measuring the actual penetration rate of the photomask;
exposing by adopting standard compensation parameters of a machine;
calculating the quantity of exposure patterns of each wafer;
calculating the number of the exposed wafers;
calculating the actual exposure time of the lens;
measuring the actual reflectivity of the wafer;
and calculating the reflectivity correction value of the wafer.
4. The method of claim 2, wherein measuring focus offset values and magnification offset values of the lens before and after exposure comprises:
measuring an intrinsic focus value and an intrinsic magnification value of the lens before exposure;
measuring an actual focus value and an actual magnification value of the exposed lens; and
comparing the actual focus value to the intrinsic focus value, and comparing the actual magnification value to the intrinsic magnification value to calculate a focus offset value and a magnification offset value for the post-exposure lens.
5. The method of claim 1, wherein the factor determining the amount of energy comprises: exposure dose; the light transmittance of the mask plate; setting a shutter; setting an aperture and an incidence angle; the reflectivity of the surface of the wafer; the number of exposure patterns for a single wafer and the number of wafers participating in exposure.
6. The method of claim 1, wherein the step of comparing the information of the product to be exposed with the stored product information is performed by a server.
7. The method of claim 1, wherein the step of calculating current lens thermal compensation parameters for the product to be exposed is performed by an aligner system.
8. The method of claim 4, wherein the steps of measuring the intrinsic focus value and the intrinsic magnification value of the pre-exposure lens and measuring the actual focus value and the actual magnification value of the post-exposure lens are performed by an image sensor.
9. The method of claim 8, wherein the image sensor runs a focal plane test method.
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