CN109742101B - Organic light emitting diode display and method of manufacturing the same - Google Patents
Organic light emitting diode display and method of manufacturing the same Download PDFInfo
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- CN109742101B CN109742101B CN201811601193.0A CN201811601193A CN109742101B CN 109742101 B CN109742101 B CN 109742101B CN 201811601193 A CN201811601193 A CN 201811601193A CN 109742101 B CN109742101 B CN 109742101B
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
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Abstract
The invention discloses an organic light-emitting diode display and a manufacturing method thereof, wherein the organic light-emitting diode display comprises a substrate, an anode conducting layer, a cathode conducting layer, a pixel definition layer, an organic light-emitting material layer, a transparent cathode layer, a plurality of contact pads, a plurality of electrode leads, a cover plate and frame glue; wherein the pixel defining layer has a plurality of via holes in which the organic light emitting material layer is disposed, the transparent cathode layer being formed on the cathode conductive layer, the pixel defining layer and the organic light emitting material layer; the contact pads are formed on the transparent cathode layer, each electrode lead has a plurality of electrode contacts, and the electrode contacts are electrically connected with the contact pads, respectively.
Description
Technical Field
The present invention relates to a display and a method for manufacturing the same, and more particularly, to an organic light emitting diode display and a method for manufacturing the same.
Background
With the rapid progress of display technology, semiconductor device technology, which is the core of display devices, has also been dramatically advanced. For the conventional display device, an Organic Light Emitting Diode (OLED) is used as a current type Light emitting device, and is increasingly applied to the field of high performance display due to its characteristics of self-luminescence, fast response, wide viewing angle, and being capable of being fabricated on a flexible substrate. In addition, the OLED display has many advantages such as bright color, high contrast, low power consumption, flexibility, and the like, and becomes a hot spot for development and investment in the display field. With the aging of the manufacturing process of the OLED display, the OLED display is more and more recognized by the public, and the application field will be wider and wider.
However, for top-emitting OLED displays, transparent cathodes use highly active metal films, such as: Mg/Ag translucent film. When the film thickness of the transparent cathode is small, a large resistance is generated, thereby reducing the conductive ability of the transparent cathode. For the large-sized OLED display, the distance between the center of the display screen and the input end of the edge electrode is large and the line is long, which causes the resistance drop (IR-drop) of the OLED display to become large, so that the brightness of the edge of the display screen is greater than that of the center of the display screen, and the problem of insufficient brightness uniformity is caused.
Disclosure of Invention
The invention aims to provide an organic light emitting diode display and a manufacturing method thereof, wherein an electrode lead is connected with a transparent cathode layer in a flip chip bonding mode, so that the resistance drop of a large-size display can be reduced, and the problem of insufficient brightness uniformity is solved.
In order to achieve the above-mentioned objectives, an embodiment of the present invention provides a method for manufacturing an organic light emitting diode display, which includes an electrode lead forming step, a conductive layer forming step, a pixel defining layer forming step, an organic light emitting material layer forming step, a transparent cathode layer forming step, and a contact pad forming step. In the electrode lead forming step, a plurality of electrode leads are formed on a cover plate, and each electrode lead is provided with a plurality of electrode contact points; in the conductive layer forming step, an anode conductive layer and a cathode conductive layer are formed on a substrate; in the step of forming the pixel definition layer, forming a pixel definition layer on the substrate and the anode conductive layer, wherein the pixel definition layer is provided with a plurality of through holes, and the through holes expose part of the anode conductive layer; in the organic light emitting material layer forming step, disposing an organic light emitting material layer in the via hole; in the transparent cathode layer forming step, a transparent cathode layer is formed on the cathode conductive layer, the pixel defining layer and the organic light emitting material layer; forming a plurality of contact pads on the transparent cathode layer in the contact pad forming step; in the cover plate assembling step, the cover plate is covered above the substrate, so that the contact pads are respectively electrically connected with the electrode contact points.
In an embodiment of the invention, in the electrode lead forming step, a patterned light shielding layer is formed on the cover plate, and then metal ink is sprayed on the light shielding layer to form the plurality of electrode leads.
In an embodiment of the invention, in the step of forming the electrode lead, the light shielding layer is a black organic resin, and the black organic resin is formed into an organic thin film by slit coating, screen printing, spin coating, inkjet printing or tape casting, and then exposed and developed to form the patterned light shielding layer.
In an embodiment of the invention, in the step of forming the electrode lead, the light shielding layer is a black inorganic thin film, and the black inorganic thin film is formed by sputtering, evaporation, chemical vapor deposition or physical vapor deposition.
In an embodiment of the invention, in the contact pad forming step, the plurality of contact pads patterned by evaporation are formed, and the contact pads are disposed above the pixel defining layer.
In an embodiment of the present invention, in the contact pad forming step, the contact pad has a thin layer formed on the transparent cathode layer and a raised portion provided on the thin layer, and the raised portion is configured to contact the electrode contact point.
In order to achieve the above-mentioned objectives, an embodiment of the present invention provides an organic light emitting diode display, which includes a substrate, an anode conductive layer, a cathode conductive layer, a pixel defining layer, an organic light emitting material layer, a transparent cathode layer, a plurality of contact pads, a plurality of electrode leads, a cover plate, and a sealant; the frame glue is combined between the substrate and the cover plate to form a cavity; the anode conducting layer and the cathode conducting layer are formed on the substrate, and the pixel defining layer is formed on the substrate and the anode conducting layer, wherein the pixel defining layer is provided with a plurality of through holes, and part of the anode conducting layer is exposed out of the through holes; the organic light-emitting material layer is arranged in the through hole, and the transparent cathode layer is formed on the cathode conducting layer, the pixel defining layer and the organic light-emitting material layer; the contact pads are formed on the transparent cathode layer, each electrode lead has a plurality of electrode contacts, and the electrode contacts are electrically connected with the contact pads, respectively.
In an embodiment of the invention, the cover plate defines a dense region and a sparse region, the dense region is located at a center of the cover plate, the sparse region is located at a periphery of the dense region, and an arrangement density of the electrode contacts located in the dense region is greater than an arrangement density of the electrode contacts located in the sparse region.
In an embodiment of the invention, each of the contact pads has a thin layer formed on the transparent cathode layer and a bump portion provided on the thin layer, and the bump portion is configured to contact the electrode contact.
In one embodiment of the present invention, the thin layer of the contact pad has a rectangular shape, and at least one side of the thin layer is 10 to 30 micrometers.
The cover plate provided with the electrode lead is covered above the substrate formed with the OLED device in a flip chip bonding mode to connect the electrode lead and the transparent cathode layer, so that the resistance voltage drop of a large-size display can be reduced, and the problem of insufficient brightness uniformity is solved.
Drawings
Fig. 1 is a schematic diagram of a preferred embodiment of an organic light emitting diode display according to the present invention.
Fig. 2 is a schematic diagram of a cover plate of an organic light emitting diode display according to a preferred embodiment of the present invention.
Fig. 3 is a flowchart of a preferred embodiment of a method of manufacturing an organic light emitting diode display according to the present invention.
Fig. 4 is a cross-sectional view of an electrode lead of a preferred embodiment of an organic light emitting diode display according to the present invention.
Fig. 5 is a top view of electrode leads of a preferred embodiment of an organic light emitting diode display according to the present invention.
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. Furthermore, directional phrases used herein, such as, for example, upper, lower, top, bottom, front, rear, left, right, inner, outer, lateral, peripheral, central, horizontal, lateral, vertical, longitudinal, axial, radial, uppermost or lowermost, etc., refer only to the orientation of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Fig. 1 is a schematic diagram of an organic light emitting diode display according to a preferred embodiment of the present invention. The organic light emitting diode display includes a substrate 21, an anode conductive layer 31, a cathode conductive layer 32, a pixel definition layer 4, an organic light emitting material layer 5, a transparent cathode layer 6, a plurality of contact pads 7, a plurality of electrode leads 8, a cover plate 22, and a sealant 23, wherein the anode conductive layer 31, the cathode conductive layer 32, the pixel definition layer 4, the organic light emitting material layer 5, and the transparent cathode layer 6 constitute an organic light emitting diode device (OLED device). The detailed construction, assembly relationship and operation principle of the above components of the embodiments of the present invention will be described in detail below.
Referring to fig. 1, the sealant 23 has a first frame 231 and a second frame 232, and the first frame 231 and the second frame 232 are combined between the substrate 21 and the cover plate 22 to form a chamber 20.
Referring to fig. 1, the anode conductive layer 31 and the cathode conductive layer 32 are formed on the substrate 21, the anode conductive layer 31 and the cathode conductive layer 32 are spaced apart from each other, the pixel defining layer 4 is formed on the substrate 21, the anode conductive layer 31 and the cathode conductive layer 32, the pixel defining layer 4 has a plurality of vias 41, and the vias 41 expose a portion of the anode conductive layer 31.
Referring to fig. 1, the organic light emitting material layer 5 is disposed in the via hole 41, the transparent cathode layer 6 is formed on the cathode conductive layer 32, the pixel defining layer 4 and the organic light emitting material layer 4, and the contact pad 7 is formed on the transparent cathode layer 6 (only one of them is shown in fig. 1 for illustration). In the present embodiment, the electrode leads 8 are formed on the cover plate 22, each electrode lead 8 has a plurality of electrode contacts 81, and the electrode contacts 8 are electrically connected to the contact pads 7, respectively.
Referring further to fig. 1, each of the contact pads 7 has a thin layer 71 and a bump portion 72, the thin layer 71 is formed on the transparent cathode layer 6, the bump portion 72 is disposed on the thin layer 71, and the bump portion 72 is configured to contact the electrode contact 81. In the present embodiment, the thin layer 71 of the contact pad 7 has a rectangular shape, and at least one side of the thin layer 71 is 10 to 30 μm.
Referring to fig. 1 and 2, the cover 22 defines a dense region a1 and a sparse region a2, the dense region a1 being located at a center of the cover 22, for example: a geometric center, the sparse zone a2 being located at the periphery of the dense zone a1, wherein an arrangement density of the electrode contacts 81 located at the dense zone a1 is greater than an arrangement density of the electrode contacts 81 located at the sparse zone a 2.
As described above, the cover plate 22 provided with the electrode leads 8 is covered over the substrate 21 on which the OLED device is formed by Flip chip bonding (Flip chip bonding) to connect the electrode leads 8 and the transparent cathode layer 6, so that the resistance drop (IR-drop) of a large-sized display can be reduced to solve the problem of insufficient luminance uniformity.
Fig. 3 is a flowchart illustrating a method for manufacturing an organic light emitting diode display according to a preferred embodiment of the present invention. The manufacturing method includes an electrode lead forming step S201, a conductive layer forming step S202, a pixel defining layer forming step S203, an organic light emitting material layer forming step S204, a transparent cathode layer forming step S205, and a contact pad forming step S206. The present invention will be described in detail with reference to the following drawings.
Referring to fig. 3 in conjunction with fig. 4 and 5, in the electrode lead forming step S201, a patterned light shielding layer 9 is formed on a cover plate 22, and then metallic ink is sprayed on the light shielding layer 9 to form a plurality of electrode leads 8, wherein each electrode lead 8 has a plurality of electrode contacts 81. In this embodiment, the electrode lead 8 is a metal, the metal is gold, silver, aluminum, copper or palladium, the light shielding layer 9 is a black organic resin, and the black organic resin is formed into an organic thin film by slit coating, screen printing, spin coating, inkjet printing or tape casting, and then exposed and developed to form the patterned light shielding layer. In addition, the light-shielding layer 9 may also be a black inorganic thin film formed by sputtering, evaporation, chemical vapor deposition or physical vapor deposition. And the black inorganic thin film may be a metal oxide or sulfide such as: copper oxide, iron oxide, manganese dioxide, ferroferric oxide, molybdenum sulfide or copper sulfide.
Referring to fig. 3 in conjunction with fig. 1, in the conductive layer forming step S202, an anode conductive layer 31 and a cathode conductive layer 32 are formed on a substrate 21, wherein a gap is formed between the anode conductive layer 31 and the cathode conductive layer 32.
Referring to fig. 3 in conjunction with fig. 1, in the pixel defining layer forming step S203, a pixel defining layer 4 is formed on the substrate 21, the anode conductive layer 31 and the cathode conductive layer 32, wherein the pixel defining layer 4 has a plurality of via holes 41, and the via holes 41 expose a portion of the anode conductive layer 31.
Referring to fig. 3 in conjunction with fig. 1, in the step S204, an organic light emitting material layer 5 is disposed in the via hole 41, such that the organic light emitting material layer 5 covers the portion of the anode conductive layer 31 exposed by the via hole 41.
Referring to fig. 3 in conjunction with fig. 1, in the transparent cathode layer forming step S205, a transparent cathode layer 6 is formed on the cathode conductive layer 32, the pixel defining layer 4 and the organic light emitting material layer 5.
Referring to fig. 3 in conjunction with fig. 1, in the contact pad forming step S206, a plurality of contact pads 7 are formed on the transparent cathode layer 6, and the cover plate 22 is covered on the substrate 21 in a vacuum chamber, so that the contact pads 7 are electrically connected to the electrode contacts 81, respectively. In the present embodiment, the contact pads 7 are patterned by evaporation, wherein the contact pad 7 is a metal, the metal is gold, silver, aluminum, copper or palladium, and a thickness of the contact pad 7 is 50 to 5000 nm. Further, the contact pad 7 is arranged above the pixel defining layer 4, wherein the contact pad 7 has a thin layer 71 and a bump portion 72, the thin layer 71 is formed on the transparent cathode layer 6, the bump portion 72 is arranged on the thin layer 71, and the bump portion 72 is configured to contact the electrode contact 81.
The cover plate 22 provided with the electrode leads 8 is covered above the substrate 21 on which the OLED device is formed by Flip chip bonding (Flip chip bonding) to connect the electrode leads 8 and the transparent cathode layer 6, so that the resistance drop (IR-drop) of a large-sized display can be reduced to eliminate the problem of insufficient brightness uniformity.
The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. It must be noted that the disclosed embodiments do not limit the scope of the invention. Rather, modifications and equivalent arrangements included within the spirit and scope of the claims are included within the scope of the invention.
Claims (10)
1. A method of manufacturing an organic light emitting diode display, characterized by: the method for manufacturing the organic light emitting diode display comprises the following steps:
an electrode lead forming step of forming a plurality of electrode leads on a cover plate, each of the electrode leads having a plurality of electrode contacts;
a conductive layer forming step of forming an anode conductive layer and a cathode conductive layer on a substrate;
a pixel defining layer forming step of forming a pixel defining layer on the substrate and the anode conductive layer, wherein the pixel defining layer has a plurality of via holes exposing a portion of the anode conductive layer;
an organic light emitting material layer forming step of disposing an organic light emitting material layer in the via hole;
a transparent cathode layer forming step of forming a transparent cathode layer on the cathode conductive layer, the pixel defining layer and the organic light emitting material layer;
a contact pad forming step of forming a plurality of contact pads on the transparent cathode layer; and
and a cover plate assembling step of covering the cover plate above the substrate so that the contact pads are electrically connected with the electrode contacts respectively.
2. The method of manufacturing an organic light emitting diode display of claim 1, wherein: in the electrode lead forming step, a patterned light shielding layer is formed on the cover plate, and then metallic ink is sprayed on the light shielding layer to form the plurality of electrode leads.
3. The method of manufacturing an organic light emitting diode display of claim 2, wherein: in the electrode lead forming step, the light shielding layer is a black organic resin, and the black organic resin is formed into an organic thin film by slit coating, screen printing, spin coating, inkjet printing or tape casting, and then is exposed and developed to form the patterned light shielding layer.
4. The method of manufacturing an organic light emitting diode display of claim 2, wherein: in the electrode lead forming step, the light shielding layer is a black inorganic thin film, and the black inorganic thin film is formed by sputtering, evaporation, chemical vapor deposition or physical vapor deposition.
5. The method of manufacturing an organic light emitting diode display of claim 1, wherein: in the contact pad forming step, the plurality of contact pads patterned are formed by evaporation, the contact pads being disposed above the pixel defining layer.
6. The method of manufacturing an organic light emitting diode display of claim 5, wherein: in the contact pad forming step, the contact pad has a thin layer formed on the transparent cathode layer and a raised portion provided on the thin layer, and the raised portion is configured to contact the electrode contact point.
7. An organic light emitting diode display characterized by: the organic light emitting diode display comprises a substrate, an anode conducting layer, a cathode conducting layer, a pixel definition layer, an organic light emitting material layer, a transparent cathode layer, a plurality of contact pads, a plurality of electrode leads, a cover plate and frame glue;
the frame glue is combined between the substrate and the cover plate to form a cavity;
the anode conducting layer and the cathode conducting layer are formed on the substrate, and the pixel defining layer is formed on the substrate and the anode conducting layer, wherein the pixel defining layer is provided with a plurality of through holes, and part of the anode conducting layer is exposed out of the through holes;
the organic light-emitting material layer is arranged in the through hole, and the transparent cathode layer is formed on the cathode conducting layer, the pixel defining layer and the organic light-emitting material layer;
the contact pads are formed on the transparent cathode layer, each electrode lead has a plurality of electrode contacts, and the electrode contacts are electrically connected with the contact pads, respectively.
8. The organic light-emitting diode display defined in claim 7, wherein: the cover plate defines a dense area and a sparse area, the dense area is located in the center of the cover plate, the sparse area is located on the periphery of the dense area, and the arrangement density of the electrode contact points located in the dense area is greater than that of the electrode contact points located in the sparse area.
9. The organic light-emitting diode display defined in claim 7, wherein: each of the contact pads has a thin layer formed on the transparent cathode layer and a raised portion disposed on the thin layer and configured to contact the electrode contact.
10. The organic light-emitting diode display defined in claim 9, wherein: the thin layer of the contact pad has a rectangular shape and at least one side of the thin layer is 10 to 30 micrometers.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811601193.0A CN109742101B (en) | 2018-12-26 | 2018-12-26 | Organic light emitting diode display and method of manufacturing the same |
| PCT/CN2019/082120 WO2020133800A1 (en) | 2018-12-26 | 2019-04-10 | Organic light emitting diode display and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811601193.0A CN109742101B (en) | 2018-12-26 | 2018-12-26 | Organic light emitting diode display and method of manufacturing the same |
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| CN109742101A CN109742101A (en) | 2019-05-10 |
| CN109742101B true CN109742101B (en) | 2020-06-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022049A (en) * | 2012-12-12 | 2013-04-03 | 京东方科技集团股份有限公司 | Array substrate, manufacture method of array substrate and display device |
| CN104934461A (en) * | 2014-03-18 | 2015-09-23 | 三星显示有限公司 | Organic light emitting diode display |
| CN106505072A (en) * | 2016-10-31 | 2017-03-15 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display panels and flexible display apparatus |
| CN106803547A (en) * | 2017-02-15 | 2017-06-06 | 深圳市华星光电技术有限公司 | The preparation method and structure of top-emitting OLED display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9947737B2 (en) * | 2015-03-09 | 2018-04-17 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Pixel structure having high aperture ratio and circuit |
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- 2018-12-26 CN CN201811601193.0A patent/CN109742101B/en active Active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022049A (en) * | 2012-12-12 | 2013-04-03 | 京东方科技集团股份有限公司 | Array substrate, manufacture method of array substrate and display device |
| CN104934461A (en) * | 2014-03-18 | 2015-09-23 | 三星显示有限公司 | Organic light emitting diode display |
| CN106505072A (en) * | 2016-10-31 | 2017-03-15 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display panels and flexible display apparatus |
| CN106803547A (en) * | 2017-02-15 | 2017-06-06 | 深圳市华星光电技术有限公司 | The preparation method and structure of top-emitting OLED display device |
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| CN109742101A (en) | 2019-05-10 |
| WO2020133800A1 (en) | 2020-07-02 |
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