CN109741891A - A kind of novel patch formula overflow protecting element and manufacturing method - Google Patents
A kind of novel patch formula overflow protecting element and manufacturing method Download PDFInfo
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- CN109741891A CN109741891A CN201910066886.2A CN201910066886A CN109741891A CN 109741891 A CN109741891 A CN 109741891A CN 201910066886 A CN201910066886 A CN 201910066886A CN 109741891 A CN109741891 A CN 109741891A
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Abstract
The present invention discloses a kind of novel patch formula overflow protecting element and manufacturing method; it is characterized by: using polymer matrix PTC material and seepage flow type polymer capacitor parallel-connection structure; PTC resistor performance caused by short time heavy current impact can be effectively reduced by the charging of seepage flow type polymer electric capacity chip in the state of not reducing and keeping electric current to deteriorate; when long-time current state; PTC chip overcurrent significantly rises resistance cutting circuit, plays a part of to protect circuit.Seepage flow type polymer capacitor uses the design of three-phase composite material, high dielectric semiconductor filler is coated core-shell structure, polymeric matrix is adhesive, without in addition making electric capacity chip, with traditional viscose glue in seepage flow type capacitor polymer substitution SMD technique, production method is approximate with tradition PPTC surface mount elements, compact-sized, conducive to the Miniaturization Design of electronic circuit.
Description
Technical field
The present invention relates to a kind of novel patch formula overflow protecting element and manufacturing methods, belong to electronics and material science skill
Art field.
Background technique
Polymer-based positive temperature coefficient composite material (PPTC) material is added conductive using insulating polymer material as matrix
Filler is prepared, and conductive filler forms seepage flow access at room temperature, and material has high conductance, seepage flow net when overcurrent heats up
Network, which is destroyed, causes index of resistance to rise, and cutting circuit realizes defencive function, the overcurrent protection suitable for various electronic circuits.It is right
In the PTC chip of same recipe ingredient, if to increase the resistant to flow performance of pressure resistance of chip, needs to increase thickness, improve element electricity
Resistance, can make the holding current reduction of element.Patent (200610000389.5) proposes the patch type using multiple chip parallel connections
Identical size components current carrying capacity can be improved in element, but the short time spikes electric current in astable circuit or under malfunction
Often it is much higher than the carrying electric current of chip, repeated stock meeting is brought dangerous so that PTC resistor performance fatigue degradation or even burn
Factor.
Patent (CN106205912A) proposes to include polymer matrix PTC chip and polymer matrix electric capacity chip parallel-connection structure mistake
It flows protection element and suitably slows down the effect of PTC actuation time for offsetting peak current.But traditional embedded polymer
The dielectric capacitance of base mainly uses the ferroelectric ceramic powder of high dielectric constant and polymeric matrix to carry out compound preparation, dielectric constant
Usual not high (~30), for capacitor close to nF grades, filter effect is limited, and seepage flow type composite dielectric material is that a kind of high dielectric of acquisition is normal
Several effective ways, dielectric material can achieve 1000 with its compound dielectric constant of conductive material lower than percolation threshold content,
It can be more than 2000 when compared with high filler content, be greatly improved capacitance and filtration efficiency, but bring the sharply raising of loss therewith,
Cause to generate heat under high-frequency signal.But in common DC line, failure peak current is mostly unidirectional or low frequency, high-frequency point
Peak current hardly occurs, therefore can play the gentle function of current using seepage flow type polymer capacitor.
Summary of the invention
For prior art defect, the present invention provides a kind of novel patch formula overflow protecting element and manufacturing method, special
Sign is:
Using polymer matrix PTC material and seepage flow type polymer capacitor parallel-connection structure, element includes: at least one polymer
Base PTC chip, being clipped between first and second electrode foil it includes first electrode foil, second electrode foil and one layer has positive temperature
Spend the material layer of coefficient effect；At least one seepage flow type polymer capacitor glue-line, is attached on electrode foil, ties chip securely
It closes；Two termination electrodes and pin,
The seepage flow type polymer capacitor glue-line is made of polymer adhesive matrix and high dielectric semiconductor filler, high
Dielectric semiconductor packing volume mark is room temperature percolation threshold 15~35%,
Polymer matrix PTC chip and seepage flow type polymer capacitor glue-line are made lamination and are coupled using printed circuit board technology
Structure.
Polymer matrix PTC chip is " three be made of Positive temperature coefficient composite material layer and the first, second metal electrode foil
Mingzhi " structure, the polymeric matrix preferred epoxy of Positive temperature coefficient composite material layer, polyethylene, polypropylene, polyvinylidene fluoride
Alkene, ethylene-vinyl acetate copolymer, polymethyl methacrylate, ethylene-acrylic acid copolymer etc. or combinations thereof；Conductive filler
It is preferred that metallic particles, metal carbide particles, metal boride particles, carbon black, chopped carbon nanotube, graphene etc., particle
Diameter is between 0.05 micron to 100 microns, and for partial size draw ratio less than 500, the volume resistivity of conductive filler is not more than 200 μ
Ω cm, conductive filler account for the percent by volume of Positive temperature coefficient composite material between 30%~85%.First, second metal electricity
Pole foil is nickel foil or nickel plating copper foil.
Polymer adhesive matrix includes epoxy adhesive, polyurethane adhesive, organic silicon adhesive, polyacrylic acid gluing
Agent；High dielectric semiconductor filler is coated core-shell structure, and between 0.02 micron to 10 microns of partial size, internal layer is high dielectric constant
The dielectrics powder body material such as barium strontium titanate, CaCu 3 Ti 4 O, lead zirconate titanate, outer layer are the higher carbon-coating of conductivity or conducting polymer
Material, high dielectric semiconductor packing volume mark are room temperature percolation threshold 15~35%.
Manufacturing method is comprised the steps of: by first electrode foil, with the conducing composite material layer of PTC effect and the second electricity
The conducing composite material sandwich layer with resistance positive temperature coefficient effect is made by hot pressing technique in pole foil, is existed using domain technique
Insulation tank is etched on each electrode foil, is drilled, heavy copper, copper-plating technique obtain polymer matrix PTC chip；It presses and seeps in outer surface
Flow pattern polymer capacitor gluing knot glue-line, seepage flow type polymer capacitor glue-line are electrical structure in parallel with PTC sandwich layer；Finally weld
Connect pin.
Element may include more than one polymer matrix PTC chip, and multiple polymer matrix PTC chips are by seepage flow type electrostrictive polymer
Holding is parallel-connection structure between all chips of glue-line bonding and glue-line, using seepage flow type polymer electrosol as bonding in technique
Glue-line bonds multiple polymer matrix PTC chips using laminating technology, is drilled, heavy copper, copper-plating technique obtain polymer matrix PTC core
The electrical structure of piece and seepage flow type polymer capacitor glue-line parallel connection；Seepage flow type polymer capacitor glue-line is pressed in outer surface, and is welded
Connect pin.
The novel patch formula overflow protecting element of production is L-shaped in the line or structure is protected in the filtering of ∏ type, is used for electronics
The excess-current excess-temperature of route is protected, and has the gentle effect of filtering to unidirectional or low frequency short time spikes electric current.
The present invention has the advantages that the type patch type overflow protecting element can be in the state of not reducing holding electric current
The deterioration of PTC resistor performance caused by short time heavy current impact is effectively reduced by the charging of seepage flow type polymer electric capacity chip, when
When long-time current state, PTC chip overcurrent significantly rises resistance cutting circuit, plays a part of to protect circuit.Seepage flow type polymerization
Object capacitor uses the design of three-phase composite material, and high dielectric semiconductor filler is coated core-shell structure, and polymeric matrix is gluing
Agent, without in addition production electric capacity chip, with seepage flow type capacitor polymer substitution SMD technique in traditional viscose glue, production method with
Traditional PPTC surface mount elements are approximate, compact-sized, conducive to the Miniaturization Design of electronic circuit.
The contents of the present invention and feature have revealed that as above, however the present invention that describes of front only briefly or pertains only to this
The specific part of invention, feature of the invention may be more than what content disclosed herein was related to.Therefore, protection model of the invention
The revealed content of embodiment should be not limited to by enclosing, and should include the combination of all the elements embodied in different piece, with
And it is various without departing substantially from replacement and modification of the invention, and covered by claims of the present invention.
Detailed description of the invention
Fig. 1 is using (embodiment 1,2) novel patch formula parallel-connection structure overflow protecting element structural schematic diagram of the invention.
Fig. 2 is using (embodiment 3) novel patch formula parallel-connection structure overflow protecting element structural schematic diagram of the invention.
Fig. 3 is using (embodiment 4) novel patch formula parallel-connection structure overflow protecting element structural schematic diagram of the invention.
1- polymer PTC sandwich layer
3- lateral electrode
Electrode foil in 4-
5- seepage flow type polymer capacitor glue-line
7- pin
Specific embodiment
Embodiment 1:
A kind of novel patch formula overflow protecting element, polymer matrix PTC core material is high-density polyethylene to structure as shown in Figure 1:
Alkene (HDPE) and tungsten carbide ceramics powder blended compound material, interior electrode foil are nickel plating copper foil.The polymer matrix PTC core that will be made
Piece carves insulation tank using pattern transfer technology, is drilled, heavy copper, copper-plating technique obtain polymer matrix PTC chip；In outer surface
Press seepage flow type polymer capacitor gluing knot glue-line, seepage flow type polymer capacitor glue-line by polyurethane adhesive matrix and carbon packet
Barium titanate filler composition is covered, seepage flow type polymer capacitor glue-line is electrical structure in parallel with PTC sandwich layer；Last welding pin,
Obtain patch type overflow protecting element as shown in Figure 1.When element is under smooth working state, polymer matrix PTC chip
Conducting, polymer matrix electric capacity chip do not work；When there is short time spikes electric current, the charging of polymer matrix electric capacity chip is played
The effect of stabilizing circuit and protection PTC chip；When long-time current state, PTC chip overcurrent significantly rises resistance cutting electricity
Road plays a part of to protect circuit.
Embodiment 2:
A kind of novel patch formula overflow protecting element, external structure and manufacture are the same as embodiment 1.Polymer matrix PTC core
Material be PVDF and carbon black blended compound material, seepage flow type polymer capacitor glue-line by organic silicon adhesive matrix and polyaniline packet
Lead zirconate titanate filler composition is covered, interior electrode foil is nickel foil.
Embodiment 3:
A kind of patch type parallel-connection structure overflow protecting element, structure are as shown in Figure 2: element is two polymer matrix PTC cores
Material and multiple seepage flow type polymer capacitor glue-line parallel-connection structures.Polymer matrix PTC core material is Nylon 1012 and titanium carbide ceramic
Blended compound material, seepage flow type polymer capacitor glue-line coat CaCu 3 Ti 4 O filler structure by epoxy adhesive matrix and polypyrrole
At interior electrode foil is nickel plating copper foil.Two polymer matrix PTC core materials are used for the holding electric current of lift elements, meet high current
It discharges while overheat protector under low current may be implemented；The buffer capacity of seepage flow type polymer capacitor glue-line offer peak current.
Element is for high current load and in very unstable circuit environment.
Embodiment 4:
A kind of patch type parallel-connection structure overflow protecting element, structure are as shown in Figure 3: element is three polymer matrix PTC cores
Material and multiple seepage flow type polymer capacitor glue-line parallel-connection structures.Polymer matrix PTC core material is polypropylene and titanium diboride ceramic powder
Blended compound material, seepage flow type polymer capacitor glue-line coat barium strontium titanate filler by acrylic acid adhesive matrix and PEDOT
It constitutes, interior electrode foil is nickel plating copper foil.
Claims (6)
1. a kind of novel patch formula overflow protecting element and manufacturing method, it is characterised in that: use polymer matrix PTC material and infiltration
Flow pattern polymer capacitor parallel-connection structure, element includes: at least one polymer matrix PTC chip, it includes first electrode foils, second
Electrode foil and one layer of material layer with positive temperature coefficient effect being clipped between first and second electrode foil；At least one seepage flow
Type polymer capacitor glue-line, is attached on electrode foil, chip is firmly combined；Two termination electrodes and pin,
The seepage flow type polymer capacitor glue-line is made of polymer adhesive matrix and high dielectric semiconductor filler, Gao Jie electricity
Semiconductor fills volume fraction is room temperature percolation threshold 15~35%,
Polymer matrix PTC chip and seepage flow type polymer capacitor glue-line use printed circuit board technology that lamination parallel-connection structure is made.
2. a kind of novel patch formula overflow protecting element and manufacturing method according to claim 1, it is characterised in that: polymer
Base PTC chip is " sandwich " structure being made of Positive temperature coefficient composite material layer and the first, second metal electrode foil, positive temperature
Spend polymeric matrix preferred epoxy, the polyethylene, polypropylene, Kynoar, one acetic acid of ethylene of coefficient composite layer
Ethylene copolymer, polymethyl methacrylate, one acrylic copolymer of ethylene etc. or combinations thereof；The preferred metal of conductive filler
Grain, metal carbide particles, metal boride particles, carbon black, be chopped carbon nanotube, graphene etc., and grain diameter is micro- 0.05
Rice is between 100 microns, and partial size draw ratio is less than 500, and the volume resistivity of conductive filler is not more than 200 μ Ω .cm, and conduction is filled out
Material accounts for the percent by volume of Positive temperature coefficient composite material between 30%~85%.First, second metal electrode foil be nickel foil or
Nickel plating copper foil.
3. a kind of novel patch formula overflow protecting element and manufacturing method according to claim 1, it is characterised in that: polymer
Adhesive matrix includes epoxy adhesive, polyurethane adhesive, organic silicon adhesive, polyacrylic acid adhesive；High dielectric is partly led
Body filler is coated core-shell structure, and between 0.02 micron to 10 microns of partial size, internal layer is barium strontium titanate, the metatitanic acid of high dielectric constant
The dielectrics powder body material such as copper calcium, lead zirconate titanate, outer layer are the higher carbon-coating of conductivity or conductive polymer material, high dielectric half
Conductive filler volume fraction is room temperature percolation threshold 15~35%.
4. a kind of novel patch formula overflow protecting element and manufacturing method according to claim 1, which is characterized in that manufacturer
Method, which is comprised the steps of:, passes through hot pressing for first electrode foil, the conducing composite material layer with PTC effect and second electrode foil
The conducing composite material sandwich layer with resistance positive temperature coefficient effect is made in technique, is etched on each electrode foil using domain technique
Insulation tank out is drilled, heavy copper, copper-plating technique obtain polymer matrix PTC chip；Seepage flow type polymer capacitor is pressed in outer surface
Gluing knot glue-line, seepage flow type polymer capacitor glue-line are electrical structure in parallel with PTC sandwich layer；Last welding pin.
5. a kind of novel patch formula overflow protecting element and manufacturing method according to claim 1, it is characterised in that: element can
A polymer matrix PTC chip is comprised more than, multiple polymer matrix PTC chips are bonded all by seepage flow type polymer capacitor glue-line
It is parallel-connection structure between chip and glue-line, is used using seepage flow type polymer electrosol as glue line in technique and be laminated work
Skill bonds multiple polymer matrix PTC chips, is drilled, heavy copper, copper-plating technique obtain polymer matrix PTC chip and seepage flow type polymerization
The electrical structure of object capacitor glue-line parallel connection；Seepage flow type polymer capacitor glue-line, and welding pin are pressed in outer surface.
6. a kind of novel patch formula overflow protecting element and manufacturing method according to claim 1, it is characterised in that: production
Novel patch formula overflow protecting element is L-shaped in the line or structure, the excess-current excess-temperature for electronic circuit are protected in the filtering of П type
Protection, and have the gentle effect of filtering to unidirectional or low frequency short time spikes electric current.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910066886.2A CN109741891A (en) | 2019-01-22 | 2019-01-22 | A kind of novel patch formula overflow protecting element and manufacturing method |
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| CN201910066886.2A CN109741891A (en) | 2019-01-22 | 2019-01-22 | A kind of novel patch formula overflow protecting element and manufacturing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI810091B (en) * | 2022-10-17 | 2023-07-21 | 聚鼎科技股份有限公司 | Over-current protection device |
| TWI812508B (en) * | 2022-10-17 | 2023-08-11 | 聚鼎科技股份有限公司 | Over-current protection device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275019A (en) * | 2017-06-14 | 2017-10-20 | 上海萃励电子科技有限公司 | A kind of PTC surface mount elements with local refrigerating function |
-
2019
- 2019-01-22 CN CN201910066886.2A patent/CN109741891A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275019A (en) * | 2017-06-14 | 2017-10-20 | 上海萃励电子科技有限公司 | A kind of PTC surface mount elements with local refrigerating function |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI810091B (en) * | 2022-10-17 | 2023-07-21 | 聚鼎科技股份有限公司 | Over-current protection device |
| TWI812508B (en) * | 2022-10-17 | 2023-08-11 | 聚鼎科技股份有限公司 | Over-current protection device |
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