CN109735898A - A kind of preparation method of the lead iodide polycrystalline film based on Vacuum sublimation - Google Patents
A kind of preparation method of the lead iodide polycrystalline film based on Vacuum sublimation Download PDFInfo
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- CN109735898A CN109735898A CN201811422854.3A CN201811422854A CN109735898A CN 109735898 A CN109735898 A CN 109735898A CN 201811422854 A CN201811422854 A CN 201811422854A CN 109735898 A CN109735898 A CN 109735898A
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Abstract
The preparation method for the lead iodide polycrystalline film based on Vacuum sublimation that the invention discloses a kind of, standard is cleaned according to semiconductor, and ultrasonic cleaning 15min -30min in deionized water is placed in ito glass substrate, it places into and carries out ultrasonic cleaning 15min -30min in ethyl alcohol, it is subsequently placed into acetone and is cleaned by ultrasonic 15min, then it is dried up using inert gas rifle, it is preferably put into cleaning 15min -30min in cleaning machine, taking-up is put into specified baking oven spare in 150 DEG C -200 DEG C baking 3h；Prevent the pollution of volatile materials that may be present to polycrystalline film in heating source simultaneously, reduces the defect of polycrystalline film；To further improve the performance indexes of lead iodide polycrystalline film.
Description
Technical field
The present invention relates to Material Physics and chemical field more particularly to a kind of lead iodide polycrystalline based on Vacuum sublimation
The preparation method of film.
Background technique
In recent years, the deterioration and nuclear leakage of environment make radiation detector as environmental monitoring and nuclear radiation early warning
Core and basis.Lead iodide (PbI2) as a kind of extremely promising semicoductor radiating detection material, it is with higher
Atomic number (ZPb=82, ZI=53), comprehensive physical chemical property is excellent, has to X-ray, gamma-rays and alpha ray very strong
Stopping power, theoretical intrinsic resistivity is up to 1012Ω cm, forbidden bandwidth is big (Eg=2.3-2.5eV), operating temperature model
Enclose wide (room temperature is to 110 DEG C).Since its high dress ornament detectivity is conducive to reduce radiation energy and agent in medicine detection
Amount reduces the injury to human body with this；Therefore, lead iodide becomes direct conversion hysteria X-ray flat panel detector and grinds in recent years
One of hot spot material of system.
In the decades of lead iodide development, PbI2Growth [the CN201310181516-large area lead iodide of polycrystalline film
The preparation method and its facilities and equipments of thick film；A kind of iodate lead material of morphology controllable of CN201810188405-and its preparation side
Method；Xinghua Zhu,PeihuaWangyang,Hui Sun,et al.Facile growth and
characterization offreestanding single crystal PbI2 film,Materials Letters,
2016,180:59~62.CN201310219704-lead iodide photoconductive layer base digital X-ray flat panel detector .Zhu X, Sun
H,Yang D,et al.Fabrication and characterization of X—ray array detectors
based on polycrystalline PbI2,thick films[J].Journal of Materials Science
2014,25 (8): Materials in Electronics 3337-3343. etc.] has carried out a large amount of relevant research work.Mesh
Before, it is based on PbI2Direct conversion hysteria digital flat panel radiation detector mainly studies PbI2Technique preparation and its dependent imaging system
System, electrode structure and image acquisition mode conduct a research work.
The technical problems to be solved by the invention
The present invention is efficiently modified for one kind of current lead iodide polycrystalline film preparation, provides a kind of new lead iodide polycrystalline film
Growing method and its implementing device, on substrate and TFT substrate stability and high efficiency grow the lead iodide haveing excellent performance
Polycrystalline film.
Compared with traditional thermal evaporation, the effective impurity defect for reducing polycrystalline film increases the deposition rate of membrane material,
The consistency for improving polycrystalline film, provides a kind of easy lead iodide polycrystalline film grower of preparation method.
Summary of the invention
The purpose of the present invention is to solve the quality and efficiency of lead iodide polycrystalline film preparation, and a kind of base proposed
In the preparation method of the lead iodide polycrystalline film of Vacuum sublimation.
To achieve the goals above, present invention employs following technical solutions:
A kind of preparation method of the lead iodide polycrystalline film based on Vacuum sublimation, includes the following steps,
This equipment is to prepare area for 3.5cm × 3.5cm -5cm × 5cm, with a thickness of the lead iodide polycrystalline film of 2um -2mm
The preparation method is as follows:
Standard is cleaned according to semiconductor, and ultrasonic cleaning 15min -30min in deionized water is placed in ito glass substrate, then
It is put into ethyl alcohol and carries out ultrasonic cleaning 15min -30min, be subsequently placed into acetone and be cleaned by ultrasonic 15min, then use indifferent gas
The drying of body rifle is preferably put into cleaning 15min -30min in cleaning machine, and taking-up is put into specified baking oven dries at 150 DEG C -200 DEG C
Roasting 3h is spare；
Cleaned ITO substrate is mounted on graphite heat conduction plate, it is ensured that the upper surface of substrate and graphite are in close contact, with
Be conducive to the temperature uniformity and thermal diffusivity of substrate surface；And install graphite plate to molybdenum screw rod, by temperature sensor line II
It places in the probe hole with graphite plate edge；
Be that 99.99% lead iodide powder is laid in the groove of graphite evaporation boat by purity, the area of raw material be 4.5cm ×
4.5cm -5cm × 5cm, thickness is between 1mm -3mm；And equally install graphite evaporation boat to molybdenum screw rod, it then will be warm
Sensor I is spent to place in the probe hole with graphite evaporation boat edge；Regulated and controled between graphite plate and graphite evaporation boat by nut
Spacing, the spacing of the upper surface for keeping raw material and substrate lower surface is in 10mm -30mm or so；
Molybdenum screw rod is fixed on flange by the nut being welded on flange, grower is integrally put into quartzy lumen
In vivo, the real device of lead iodide polycrystalline film is hung in quartzy tube chamber by flange, connects graphite evaporation boat as far as possible
Flange and quartz ampoule, are attached using hexagonal screw rod, tighten screw rod to ensure the closed of quartzy tube chamber by nearly quartz ampoule bottom
Property；
Quartz ampoule tube cavity body is carried out being evacuated to 1 × 10 by pumped vacuum systems-3Pa—5×10-3Pa opens temperature
Control system heats quartzy bottom of the tube and ambient enviroment by resistance furnace, is carried out with the heating rate of 2 DEG C -3 DEG C/min
Heating, is heated to 180 DEG C -220 DEG C to raw material, and keep 30min -120min, carries out it under vacuum conditions certainly
So cooling；It can be taken off sample etc. being cooled to room temperature.
Preferably, gas is nitrogen in the gas gun.
It preferably, is vacuum in the specified baking oven.
Preferably, the cleaning machine is plasma cleaner.
Preferably, the time of the ultrasonic cleaning is preferably 30min.
Preferably, the resistance furnace side is equipped with power transmission line.
Compared with prior art, the preparation side for the lead iodide polycrystalline film based on Vacuum sublimation that the present invention provides a kind of
Method, have it is following the utility model has the advantages that
Heating method of the invention combines panel heater and cavity around the heater, it is ensured that the temperature of polycrystalline film growth
Field uniformity and stability；Improve the uniformity and stability of polycrystalline film growth.Compared with current thermal evaporation, steaming is completely cut off
It rises and is directly contacted with heating source, improve the stability of heating source, reduce in evaporation process lead iodide to heating device
The pollution of part of devices extends the service life of device；Volatile materials pair that may be present in heating source is ensured simultaneously
The pollution of polycrystalline film reduces the defect of polycrystalline film；Further improve the performance indexes of lead iodide polycrystalline film.
Detailed description of the invention
Fig. 1 is that a kind of structure of the preparation method of the lead iodide polycrystalline film based on Vacuum sublimation proposed by the present invention is shown
It is intended to；
Fig. 2 is a kind of Vacuum Heat of the preparation method of the lead iodide polycrystalline film based on Vacuum sublimation proposed by the present invention
The XRD spectrum schematic diagram of evaporation growth polycrystalline film；
A kind of position Fig. 3 preparation method lead iodide of the lead iodide polycrystalline film based on Vacuum sublimation proposed by the present invention is more
Epitaxial surface topography SEM image schematic diagram.
In figure: 1 temperature sensor line I, 2 temperature sensor lines II, 3 power transmission lines, 4 vacuum systems, 5 temperature control systems, 6
Flange, 7 graphite plates, 8 substrates, 9 graphite evaporation boats, 10 molybdenum screw rods, 11 quartz ampoule tube cavity bodies, 12 resistance furnaces.
Specific embodiment
Below in conjunction with the attached drawing in the present invention, the technical solution in the present invention is clearly and completely described, is shown
So, described invention is only present invention a part invention, rather than whole inventions.
In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", "left", "right", "top",
The orientation or positional relationship of the instructions such as "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, merely to just
In description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with
Specific orientation construction and operation, therefore be not considered as limiting the invention.
Referring to Fig.1-3, a kind of preparation method of the lead iodide polycrystalline film based on Vacuum sublimation, including including following
Step
This equipment is to prepare area for 3.5cm × 3.5cm -5cm × 5cm, with a thickness of the lead iodide polycrystalline film of 2um -2mm
The preparation method is as follows:
Standard is cleaned according to semiconductor, and ultrasonic cleaning 15min -30min in deionized water is placed in ito glass substrate, then
It is put into ethyl alcohol and carries out ultrasonic cleaning 15min -30min, be subsequently placed into acetone and be cleaned by ultrasonic 15min, then use indifferent gas
The drying of body rifle is preferably put into cleaning 15min -30min in cleaning machine, and taking-up is put into specified baking oven dries at 150 DEG C -200 DEG C
Roasting 3h is spare；
Cleaned ITO substrate 8 is mounted on graphite heat conduction plate 7, it is ensured that the upper surface of substrate and graphite are in close contact,
To be conducive to the temperature uniformity and thermal diffusivity of substrate surface；And install graphite plate 7 to molybdenum screw rod 10, by temperature sensor
Line II 2 is placed in the probe hole with 7 edge of graphite plate；
It is that 99.99% lead iodide powder is laid in the groove of graphite evaporation boat 9 by purity, the area of raw material is 4.5cm
× 4.5cm -5cm × 5cm, thickness is between 1mm -3mm；And equally install graphite evaporation boat 9 to molybdenum screw rod 10, then
Temperature sensor I 1 is placed in the probe hole with 9 edge of graphite evaporation boat；Regulate and control graphite plate 7 by nut and graphite evaporates
The spacing of spacing between boat 9, the upper surface for keeping raw material and 8 lower surface of substrate is in 10mm -30mm or so；
Molybdenum screw rod 10 is fixed on flange 6 by the nut being welded on flange 6, grower is integrally put into quartz
In tube chamber, the real device of lead iodide polycrystalline film is hung in quartzy tube chamber by flange, makes graphite evaporation boat 9 as far as possible
Close to quartz ampoule bottom, flange and quartz ampoule are attached using hexagonal screw rod, tighten screw rod to ensure quartzy tube chamber
Airtightness；
Quartz ampoule tube cavity body 11 is carried out being evacuated to 1 × 10-3Pa-5 × 10-3Pa by pumped vacuum systems 4,
Temperature control system 5 is opened, is heated by 12 pairs of resistance furnace quartzy bottom of the tube and ambient enviroment, with the heating of 2 DEG C -3 DEG C/min
Rate heats up, and is heated to 180 DEG C -220 DEG C to raw material, and keep 30min -120min, makes it in vacuum environment later
Lower carry out Temperature fall；It can be taken off sample etc. being cooled to room temperature.Gas is nitrogen in gas gun, and specifying is vacuum in baking oven,
Cleaning machine is plasma cleaner, and the time of ultrasonic cleaning is preferably 30min, and 12 side of resistance furnace is equipped with power transmission line 3.
Case study on implementation 1
In the present embodiment, area be 5cm × 5cm, the lead iodide polycrystalline film of thickness 500um the preparation method is as follows:
Technique of the invention and the technique of invention 1 are essentially identical, wherein the difference is that: 1, raw material is laid in graphite steaming
The area for sending out boat 9 is about 6.5cm × 6.5cm, and the thickness of raw material is about between 1mm -1.5mm, the lower surface of substrate 8 and raw material
Between spacing in 10mm or so, the vacuum degree of vacuum cavity 11 is 2.5 × 10-2Pa, and 1 DEG C-150 DEG C of heating digit rate is 7
DEG C/min, 150 DEG C -200 DEG C of heating digit rate is 5 DEG C/min, and 200 DEG C -230 DEG C of heating digit rate is 3 DEG C/min, 230
DEG C heat preservation 30min.
Case study on implementation 2
The present embodiment be prepare area be 3.5cm × 3.5cm, the lead iodide polycrystalline film of thickness 2mm the preparation method is as follows:
Standard is cleaned according to semiconductor, and ultrasonic cleaning 15min -30min in deionized water is placed in ito glass substrate, then
It is put into ethyl alcohol and carries out ultrasonic cleaning 15min -30min, be subsequently placed into ultrasonic cleaning 15min or more in acetone, then use nitrogen
Air gun drying is preferably put into cleaning 15min -30min in plasma washing machine, and taking-up is put into vacuum drying oven dries at 200 DEG C
Roasting 3h is spare；
Cleaned ITO substrate 8 is mounted on graphite heat conduction plate 7, it is ensured that the upper surface of substrate and graphite are in close contact,
To be conducive to the temperature uniformity and thermal diffusivity of substrate surface；And install graphite plate 7 to molybdenum screw rod 10, by temperature sensor
Line II 2 is placed in the probe hole at 7 edge of graphite plate；
It is that 99.99% lead iodide powder is laid in the groove of graphite evaporation boat 9 by purity, the area of raw material is 4.5cm
× 4.5cm, thickness is between 1mm -3mm；And equally install graphite evaporation boat 9 to molybdenum screw rod 10, then by temperature sensing
Device line I 1 is placed in the probe hole with 9 edge of graphite evaporation boat；Regulated and controled between graphite plate 7 and graphite evaporation boat 9 by nut
Spacing, keep the spacing of 8 lower surface of upper surface and substrate of raw material between 10mm -20mm；
Molybdenum screw rod 10 is fixed on flange 6 by the nut being welded on flange 6, grower is integrally put into quartz
In tube chamber, the real device of lead iodide polycrystalline film is hung in quartzy tube chamber by flange, makes graphite evaporation boat 9 as far as possible
Close to quartz ampoule bottom, flange and quartz ampoule are attached using hexagonal screw rod, tighten screw rod to ensure quartzy tube chamber
Airtightness；
Quartz ampoule tube cavity body 11 is carried out being evacuated to 3 × 10 by pumped vacuum systems 4-3Pa opens temperature control system 5,
It is heated, is heated up with the heating rate of 2 DEG C/min, to raw material by 12 pairs of resistance furnace quartzy bottom of the tube and ambient enviroment
220 DEG C are heated to, and keeps 120min, it is made to carry out Temperature fall under vacuum conditions later；It is i.e. desirable etc. being cooled to room temperature
Sample out.
Case study on implementation 3
The present embodiment be prepare area be 5cm × 5cm, with a thickness of 200um lead iodide polycrystalline film the preparation method is as follows:
Standard is cleaned according to semiconductor, and ultrasonic cleaning 15min -30min in deionized water is placed in ito glass substrate, then
It is put into ethyl alcohol and carries out ultrasonic cleaning 15min -30min, be subsequently placed into ultrasonic cleaning 15min or more in acetone, then use nitrogen
Air gun drying is preferably put into cleaning 15min -30min in plasma washing machine, and taking-up is put into vacuum drying oven dries at 200 DEG C
Roasting 3h is spare；
Cleaned ITO substrate 8 is mounted on graphite heat conduction plate 7, it is ensured that the upper surface of substrate and graphite are in close contact,
To be conducive to the temperature uniformity and thermal diffusivity of substrate surface；And install graphite plate 7 to molybdenum screw rod 10, by temperature sensor
Line II 2 is placed in the probe hole with 7 edge of graphite plate；
Be that 99.99% lead iodide powder is laid in the groove of graphite evaporation boat 9 by purity, the area of raw material be 5cm ×
5cm, thickness is between 1mm -3mm；And equally install graphite evaporation boat 9 to molybdenum screw rod 10, then by temperature sensor line
I 1 place in the probe hole with 9 edge of graphite evaporation boat；Between being regulated and controled between graphite plate 7 and graphite evaporation boat 9 by nut
Away from keeping the spacing of 8 lower surface of upper surface and substrate of raw material between 20min -30mm；
Molybdenum screw rod 10 is fixed on flange 6 by the nut being welded on flange 6, grower is integrally put into quartz
In tube chamber, the real device of lead iodide polycrystalline film is hung in quartzy tube chamber by flange, makes graphite evaporation boat 9 as far as possible
Close to quartz ampoule bottom, flange and quartz ampoule are attached using hexagonal screw rod, tighten screw rod to ensure quartzy tube chamber
Airtightness；
Quartz ampoule tube cavity body 11 is carried out being evacuated to 1 × 10 by pumped vacuum systems 4-3Pa opens temperature control system 5,
It is heated, is heated up with the heating rate of 3 DEG C/min, to raw material by 12 pairs of resistance furnace quartzy bottom of the tube and ambient enviroment
180 DEG C are heated to, and keeps 30min, it is made to carry out Temperature fall under vacuum conditions later；It can be taken off etc. being cooled to room temperature
Sample.
Case study on implementation 4
The present embodiment is to prepare area for 3.5cm × 3.5cm, with a thickness of the preparation method of the lead iodide polycrystalline film of 800um
It is as follows:
Standard is cleaned according to semiconductor, and ultrasonic cleaning 15min -30min in deionized water is placed in ito glass substrate, then
It is put into ethyl alcohol and carries out ultrasonic cleaning 15min -30min, be subsequently placed into ultrasonic cleaning 15min or more in acetone, then use nitrogen
Air gun drying is preferably put into cleaning 15min -30min in plasma washing machine, and taking-up is put into vacuum drying oven dries at 150 DEG C
Roasting 3h is spare；
Cleaned ITO substrate 8 is mounted on graphite heat conduction plate 7, it is ensured that the upper surface of substrate and graphite are in close contact,
To be conducive to the temperature uniformity and thermal diffusivity of substrate surface；And install graphite plate 7 to molybdenum screw rod 10, by temperature sensor
II 2 place in the probe hole with 7 edge of graphite plate；
It is that 99.99% lead iodide powder is laid in the groove of graphite evaporation boat 9 by purity, the area of raw material is 4.5cm
× 4.5cm, thickness is between 1mm -2mm；And equally install graphite evaporation boat 9 to molybdenum screw rod 10, then by temperature sensing
Device I 1 is placed in the probe hole with 9 edge of graphite evaporation boat；Regulated and controled between graphite plate 7 and graphite evaporation boat 9 by nut
The spacing of spacing, the upper surface for keeping raw material and 8 lower surface of substrate is in 20mm or so；
Molybdenum screw rod 10 is fixed on flange 6 by the nut being welded on flange 6, grower is integrally put into quartz
In tube chamber, the real device of lead iodide polycrystalline film is hung in quartzy tube chamber by flange, makes graphite evaporation boat 9 as far as possible
Close to quartz ampoule bottom, flange and quartz ampoule are attached using hexagonal screw rod, tighten screw rod to ensure quartzy tube chamber
Airtightness；
Quartz ampoule tube cavity body 11 is carried out being evacuated to 5 × 10 by pumped vacuum systems 4-3Pa opens temperature control system 5,
It is heated, is heated up with the heating rate of 3 DEG C/min, to raw material by 12 pairs of resistance furnace quartzy bottom of the tube and ambient enviroment
190 DEG C are heated to, and keeps 60min, it is made to carry out Temperature fall under vacuum conditions later；It can be taken off etc. being cooled to room temperature
Sample.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (6)
1. a kind of preparation method of the lead iodide polycrystalline film based on Vacuum sublimation, which is characterized in that include the following steps
This equipment is to prepare area for 3.5cm × 3.5cm -5cm × 5cm, with a thickness of the system of the lead iodide polycrystalline film of 2um -2mm
Preparation Method is as follows:
Standard is cleaned according to semiconductor, ultrasonic cleaning 15min -30min in deionized water is placed in ito glass substrate, place into
Ultrasonic cleaning 15min -30min is carried out in ethyl alcohol, is subsequently placed into acetone and is cleaned by ultrasonic 15min, then uses inert gas rifle
Drying, is preferably put into cleaning 15min -30min in cleaning machine, and taking-up is put into specified baking oven in 150 DEG C -200 DEG C baking 3h
It is spare；
Cleaned ITO substrate (8) is mounted on graphite heat conduction plate (7), it is ensured that the upper surface of substrate and graphite are in close contact,
To be conducive to the temperature uniformity and thermal diffusivity of substrate surface；And by graphite plate (7) installation to molybdenum screw rod (10), temperature is passed
Sensor line II (2) is placed in the probe hole with graphite plate (7) edge；
Be that 99.99% lead iodide powder is laid in the groove of graphite evaporation boat (9) by purity, the area of raw material be 4.5cm ×
4.5cm -5cm × 5cm, thickness is between 1mm -3mm；And equally install graphite evaporation boat (9) on molybdenum screw rod (10), so
Temperature sensor I (1) is placed in the probe hole with graphite evaporation boat (9) edge afterwards；By nut regulation graphite plate (7) with
Spacing between graphite evaporation boat (9), the spacing of the upper surface and substrate (8) lower surface that keep raw material is on the left side 10mm -30mm
It is right；
Molybdenum screw rod (10) is fixed on flange (6) by the nut being welded on flange (6), grower is integrally put into stone
In English tube chamber, the real device of lead iodide polycrystalline film is hung in quartzy tube chamber by flange, makes graphite evaporation boat (9) to the greatest extent
It is possible to be attached flange and quartz ampoule using hexagonal screw rod close to quartz ampoule bottom, screw rod is tightened to ensure quartzy lumen
The airtightness of body；
Quartz ampoule tube cavity body (11) is carried out being evacuated to 1 × 10-3Pa-5 × 10-3Pa by pumped vacuum systems (4),
It opens temperature control system (5), quartzy bottom of the tube and ambient enviroment is heated by resistance furnace (12), with 2 DEG C -3 DEG C/min's
Heating rate heats up, and is heated to 180 DEG C -220 DEG C to raw material, and keep 30min -120min, makes it in vacuum later
Temperature fall is carried out under environment；It can be taken off sample etc. being cooled to room temperature.
2. a kind of preparation method of lead iodide polycrystalline film based on Vacuum sublimation according to claim 1, feature
It is, gas is nitrogen in the gas gun.
3. a kind of preparation method of lead iodide polycrystalline film based on Vacuum sublimation according to claim 1, feature
It is, is vacuum in the specified baking oven.
4. a kind of preparation method of lead iodide polycrystalline film based on Vacuum sublimation according to claim 1, feature
It is, the cleaning machine is plasma cleaner.
5. a kind of preparation method of lead iodide polycrystalline film based on Vacuum sublimation according to claim 1, feature
It is, the time of the ultrasonic cleaning is preferably 30min.
6. a kind of preparation method of lead iodide polycrystalline film based on Vacuum sublimation according to claim 1, feature
It is, resistance furnace (12) side is equipped with power transmission line (3).
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122007A (en) * | 2007-09-12 | 2008-02-13 | 上海大学 | Method for preparing mercuric iodide film under ultrasound wave |
| CN102337588A (en) * | 2011-10-31 | 2012-02-01 | 上海大学 | Preparation method of polycrystalline mercuric iodide thick film with high orientation |
| CN103268904A (en) * | 2013-05-16 | 2013-08-28 | 上海大学 | Preparation for X-ray detector based on polycrystal mercury iodide thin film |
| CN103374706A (en) * | 2012-04-13 | 2013-10-30 | 河南师范大学 | Method for preparing polycrystalline silicon film |
| CN104164649A (en) * | 2013-05-16 | 2014-11-26 | 朱兴华 | Preparation method for large-area lead iodide thick film and implementation equipment thereof |
| US8957386B1 (en) * | 2011-04-28 | 2015-02-17 | Radiation Monitoring Devices, Inc. | Doped cesium barium halide scintillator films |
-
2018
- 2018-11-27 CN CN201811422854.3A patent/CN109735898A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122007A (en) * | 2007-09-12 | 2008-02-13 | 上海大学 | Method for preparing mercuric iodide film under ultrasound wave |
| US8957386B1 (en) * | 2011-04-28 | 2015-02-17 | Radiation Monitoring Devices, Inc. | Doped cesium barium halide scintillator films |
| CN102337588A (en) * | 2011-10-31 | 2012-02-01 | 上海大学 | Preparation method of polycrystalline mercuric iodide thick film with high orientation |
| CN103374706A (en) * | 2012-04-13 | 2013-10-30 | 河南师范大学 | Method for preparing polycrystalline silicon film |
| CN103268904A (en) * | 2013-05-16 | 2013-08-28 | 上海大学 | Preparation for X-ray detector based on polycrystal mercury iodide thin film |
| CN104164649A (en) * | 2013-05-16 | 2014-11-26 | 朱兴华 | Preparation method for large-area lead iodide thick film and implementation equipment thereof |
Non-Patent Citations (1)
| Title |
|---|
| 朱兴华等: "近空间升华法制备PbI2厚膜及其性质研究", 《功能材料》 * |
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Application publication date: 20190510 |