CN109728128A - SiGe integrated light detector and preparation method thereof - Google Patents
SiGe integrated light detector and preparation method thereof Download PDFInfo
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- CN109728128A CN109728128A CN201711050293.4A CN201711050293A CN109728128A CN 109728128 A CN109728128 A CN 109728128A CN 201711050293 A CN201711050293 A CN 201711050293A CN 109728128 A CN109728128 A CN 109728128A
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Abstract
The present invention relates to a kind of SiGe integrated light detectors and preparation method thereof, monocrystalline silicon and growth monocrystalline germanium are grown respectively in the same side of silicon substrate, obtain corresponding silicon photo detecting unit and germanium photo detecting unit, there is the side of monocrystalline silicon and monocrystalline germanium in silicon substrate growth, the doping opposite with silicon substrate is carried out corresponding to the position of silicon photo detecting unit and germanium photo detecting unit, the electrical connection path unit being electrically connected with silicon photo detecting unit and germanium photo detecting unit is formed in the side that silicon substrate forms doping, the side deposited metal layer of electrical connection path unit is formed in silicon substrate, conductive pattern is formed after carrying out dry etching processing to metal layer, conductive pattern covering electrical connection path unit, silicon photo detecting unit and germanium photo detecting unit.Germanium and silicon belong to family, and germanium material epitaxial growth on a silicon substrate, SiGe can be integrated on same silicon substrate well, enhance the performance of detector, expand the range of detector detection light.
Description
Technical field
The present invention relates to semiconductor preparation fields, more particularly to a kind of SiGe integrated light detector and preparation method thereof.
Background technique
Optical detector, also known as " photodetector " are the primary parts of photoreceiver, are one that fibre optical sensor is constituted
Pith, its performance indicator will directly affect the performance of sensor.
Current mature method is to prepare silicon optical detector on a silicon substrate, or the spy of germanium light is prepared in germanium substrate
Device is surveyed, or prepares germanium optical detector on a silicon substrate, wherein it is mostly used Non-selective growth, traditional silicon materials optical detection
Device limits to the range for detecting optical signal, traditional optical detection due to Non-selective growth homogenous material on a silicon substrate
The narrow range of device detection optical signal.
Summary of the invention
Based on this, it is necessary in view of the above-mentioned problems, providing a kind of SiGe Integrated Light of range that can expand detection optical signal
Detector and preparation method thereof.
A kind of SiGe integrated light detector preparation method, comprising the following steps:
The same side of silicon substrate grow respectively monocrystalline silicon and growth monocrystalline germanium, obtain corresponding silicon photo detecting unit and
Germanium photo detecting unit；
There is the side of monocrystalline silicon and monocrystalline germanium in silicon substrate growth, corresponds to the silicon photo detecting unit and described
The position of germanium photo detecting unit carries out the doping opposite with the silicon substrate；
It is formed and the silicon photo detecting unit and germanium photo detecting unit electricity in the side that the silicon substrate forms doping
The electrical connection path unit of connection；
The silicon substrate be formed with it is described electrical connection path unit side deposited metal layer, to the metal layer into
Conductive pattern is formed after the processing of row dry etching, the conductive pattern covers the electrical connection path unit, the silicon optical detection
Unit and the germanium photo detecting unit.
A kind of SiGe integrated light detector, is made according to method described in above-mentioned any one.
Above-mentioned SiGe integrated light detector and preparation method thereof grows monocrystalline silicon and life in the same side of silicon substrate respectively
Long monocrystalline germanium obtains corresponding silicon photo detecting unit and germanium photo detecting unit；There are monocrystalline silicon and monocrystalline germanium in silicon substrate growth
Side carries out the doping opposite with silicon substrate corresponding to the position of silicon photo detecting unit and germanium photo detecting unit；In silicon substrate shape
The electrical connection path unit being electrically connected with silicon photo detecting unit and germanium photo detecting unit is formed at the side of doping；In silicon substrate
It is formed with the side deposited metal layer of electrical connection path unit, forms conductive pattern after carrying out dry etching processing to metal layer,
Conductive pattern covering electrical connection path unit, silicon photo detecting unit and germanium photo detecting unit.Germanium and silicon belong to family, germanium material
It can on a silicon substrate, epitaxial growth monocrystalline silicon and monocrystalline germanium, pass through the side of production above on a silicon substrate for epitaxial growth well
Legal system forms SiGe integrated light detector, enhances the performance of detector, expands the range of detector detection light.
Detailed description of the invention
Fig. 1 is SiGe integrated light detector preparation method flow chart in an embodiment；
Fig. 2 is the schematic diagram that silicon substrate grows silicon in an embodiment；
Fig. 3 is the schematic diagram that silicon substrate grows germanium in an embodiment；
Fig. 4 is that doping window forms schematic diagram in an embodiment；
Fig. 5 is that electrical connection path unit forms schematic diagram in an embodiment；
Fig. 6 is that metal layer pattern forms schematic diagram in an embodiment；
Fig. 7 is SiGe integrated light detector preparation method flow chart in another embodiment；
Fig. 8 is that conductive pattern forms schematic diagram in an embodiment.
Specific embodiment
In one embodiment, as shown in Figure 1, a kind of SiGe integrated light detector preparation method, comprising the following steps:
Step S110: monocrystalline silicon and growth monocrystalline germanium are grown respectively in the same side of silicon substrate, corresponding silicon light is obtained and visits
Survey unit and germanium photo detecting unit.
Specifically, silicon substrate is highly doped silicon, and highly doped silicon is a kind of Silicon Wafer material, has preferable electric conductivity.
In the present embodiment, step S110 includes step 112 and step 114.
Step 112: the mask plate for being printed on pattern corresponding with silicon photo detecting unit is placed in the silicon that growth has masking layer
Substrate carries out being lithographically formed silicon growth region, grows monocrystalline silicon in silicon growth region, obtains corresponding silicon photo detecting unit,
The masking layer of remaining position of the silicon substrate in addition to silicon photo detecting unit is removed, and has the side of monocrystalline silicon raw in silicon substrate growth
Long masking layer.
Specifically, as shown in Fig. 2, mask plate is the carrier of the original figure in exposure process, by exposure process, this
The information of a little figures will be passed on chip, be used when manufacturing chip.In the present embodiment, masking layer is silicide masking layer,
Further, silicide masking layer is silica or silicon nitride masking layer.Masking layer is the making devices structure mistake on wafer
The process used in journey, the graphic structure on mask plate form the figure of needs from mask plate to masking layer on masking layer
Shape structure (such as silicon photo detecting unit), some places cover silicon substrate, and some places exposure silicon substrate covers the ground of silicon substrate
Side prevents lower step process from changing to silicon substrate and (can be etching, grow, doping ...), and the place of exposure silicon substrate does not hinder
It only descends step process to change silicon substrate, after the completion of technique, removes masking layer, one layer just needed on a silicon substrate
Structure, then the one layer of complete masking layer that regrow carry out the technological operation of next step.The method for removing masking layer is according to material
Expect characteristic and select, with wet process solvent (for example, IPA, for removing photoresist masking layer, diluted hydrofluoric acid is for removing silicon
Compound masking layer), in the present embodiment, what is used is silicide masking layer, that is, diluted hydrofluoric acid can be used to remove.
The epitaxial growth monocrystalline silicon in silicon growth region, epitaxial growth refers to grows one layer on single crystalline substrate (substrate)
It has certain requirements, single crystalline layer identical with Substrate orientation, like original crystal has extended outwardly one section.Epitaxial growth
New single-crystal layer can conduction type, in terms of it is different from substrate, the more of different-thickness and different requirements can also be grown
Layer monocrystalline, to greatly improve the flexibility of device design and the performance of device.
Step 114: the mask plate for being printed on pattern corresponding with germanium photo detecting unit is placed in the silicon that growth has masking layer
Substrate carries out being lithographically formed germanium growth district, grows monocrystalline germanium in germanium growth district, obtains corresponding germanium photo detecting unit,
Remove the masking layer of remaining position of the silicon substrate in addition to germanium photo detecting unit.
Specifically, as shown in figure 3, silicon growth region and germanium growth district are located at any different position on silicon substrate
It sets, i.e., selective growth monocrystalline silicon and monocrystalline germanium can arbitrary position, producer can be according to concrete functions on a silicon substrate
It needs, grows monocrystalline silicon and monocrystalline germanium respectively in specific position, and the quantity for growing single silicon and monocrystalline germanium does not limit, it can be with
Arbitrary arrangement according to demand.
Step S120: there is the side of monocrystalline silicon and monocrystalline germanium in silicon substrate growth, correspond to silicon photo detecting unit and germanium light
The position of probe unit carries out the doping opposite with silicon substrate.
Specifically, as shown in figure 4, corresponding to silicon photo detecting unit and germanium optical detection if silicon substrate is N doping
P doping is done in unit, if silicon substrate is P doping, i.e., is N in corresponding to silicon photo detecting unit and germanium photo detecting unit and is mixed
It is miscellaneous.Using different doping process, by diffusion, P-type semiconductor and N-type semiconductor are produced on same block semiconductor
On substrate, space-charge region is just formed in their interface and is known as PN junction.
In one embodiment, step S120 includes step 122 and step 124.
Step 122: thering is the side of monocrystalline silicon and monocrystalline germanium to grow masking layer in silicon substrate growth, will be printed on and visited with silicon light
The mask plate for surveying unit and pattern corresponding with germanium photo detecting unit is placed on masking layer.
Step 124: the position progress photoetching for corresponding to silicon photo detecting unit and germanium photo detecting unit on masking layer is laggard
The row doping opposite with silicon substrate, removal silicon substrate is in addition to corresponding to the position of silicon photo detecting unit and germanium photo detecting unit
The masking layer of remaining position.
Specifically, it will be printed on and the mask plate of silicon photo detecting unit and pattern corresponding with germanium photo detecting unit be placed in
Masking layer corresponds to silicon photo detecting unit and the position of germanium photo detecting unit carries out photoetching, i.e., by visiting on mask plate with silicon light
Unit and pattern corresponding with germanium photo detecting unit is surveyed to be transferred on silicon substrate, with silicon photo detecting unit and with germanium optical detection
The doping opposite with silicon substrate is carried out in the corresponding pattern of unit.
Step S130: it is formed in the side that silicon substrate forms doping and is electrically connected with silicon photo detecting unit and germanium photo detecting unit
The electrical connection path unit connect.
In one embodiment, step S130 includes step 132 and step 134.
Step 132: growing masking layer in the side that silicon substrate forms doping.
Specifically, growth masking layer is one in order to which the graphical information on mask plate to be transferred on silicon substrate common
Process.
Step 134: will be printed on electrical connection via pattern mask plate be placed in masking layer corresponding to silicon photo detecting unit and
The position of germanium photo detecting unit carries out photoetching, forms the connection that is electrically connected being electrically connected with silicon photo detecting unit and germanium photo detecting unit
Road unit.
Specifically, as shown in figure 5, the mask plate for being printed on electrical connection via pattern is placed in masking layer corresponding to silicon light
The position of probe unit and germanium photo detecting unit carries out photoetching, i.e., the electrical connection via pattern on mask plate is transferred to silicon lining
On bottom, electrical connection path unit is formed, circuit connection path unit is electrically connected with silicon photo detecting unit and germanium photo detecting unit.
Step S140: it is formed with the side deposited metal layer of electrical connection path unit in silicon substrate, metal layer is done
Conductive pattern, conductive pattern covering electrical connection path unit, silicon photo detecting unit and germanium optical detection list are formed after method etching processing
Member.
In one embodiment, step S140 includes step 142 to step 146.
Step 142: being formed with the side deposited metal layer of electrical connection path unit in silicon substrate.
Specifically, metal layer is electric connection layer, and by PVD, (Physical Vapor Deposition, physical vapor are heavy
Product) method deposition, refer to and realize that substance shifts using physical process, atom or molecule are transferred on substrate surface by source
Process.Its effect is can to make the particle spraying of certain energy (intensity height, wearability, thermal diffusivity, rotproofness etc.) that have specific characteristics
On the lower parent of performance, so that parent has better performance.
Step 144: the mask plate for being printed on metal layer pattern being placed in metal layer and is corresponded to and silicon photo detecting unit and germanium
The adjacent position of photo detecting unit carries out dry etching, forms metal layer pattern.
Specifically, it is visited as shown in fig. 6, the mask plate for being printed on metal layer pattern is placed in metal layer and is corresponded to silicon light
It surveys unit and the adjacent position of germanium photo detecting unit carries out dry etching, remaining in addition to metal layer pattern can be got rid of
Metal obtains metal layer pattern, and further, dry etching is the technology that film etching is carried out with plasma.When gas with
In the presence of plasma form, it has two features: these aerochemistry activity in one side plasma are than under normality
There are many Shi Yaoqiang, according to the difference for the material that is etched, select suitable gas, so that it may quickly reacted with material, it is real
Now etch the purpose of removal；On the other hand, it can also guide and accelerate using electric field plasma, it is made to have one
It surely measures, when its bombardment is etched the surface of object, the atom for the object material that is etched can be hit, utilize physics to reach
On energy transfer realize the purpose of etching, therefore, dry etching is that two kinds of processes of wafer surface physics and chemistry are flat
The result of weighing apparatus.
Step 146: the mask plate for being printed on optical detection effective district pattern being placed in silicon substrate and is formed with metal layer pattern
Side corresponds to the masking layer in the position progress photoetching removal optical detection effective district of silicon photo detecting unit and germanium photo detecting unit
Obtain optical detection effective district unit, optical detection effective district unit and the metal layer pattern shape connecting with optical detection effective district unit
At conductive pattern.
Specifically, the mask plate for being printed on optical detection effective district pattern is placed in silicon substrate and is formed with metal layer pattern
Side corresponds to silicon photo detecting unit and the position of germanium photo detecting unit carries out photoetching, can be by exposed position, that is, optical detection
The masking layer of effective district pattern removes, and obtains optical detection effective district unit, it will be understood that optical detection effective district unit includes institute
Have a silicon photo detecting unit and germanium photo detecting unit, metal layer pattern covering electrical connection path unit, and with silicon photo detecting unit and
The connection of germanium photo detecting unit, conductive pattern include optical detection effective district unit and the metal that connect with optical detection effective district unit
Layer pattern.
In one embodiment, as shown in fig. 7, further including step S150 and step S160 after step s 140.
Step S150: correspond to the position plated film of conductive pattern in the side that silicon substrate is formed with conductive pattern.
Specifically, in the present embodiment, semiconductor technology CVD growth silicon nitride film can be used, by controlling silicon nitride
The thickness of film come achieve the effect that it is anti-reflection to particular range of wavelengths or increase it is anti-, plate as needed antireflection film, anti-reflection film or
The filter membrane etc. of specific wavelength further in order to reach better effect, can be formed with conductive pattern in silicon substrate
The position that side corresponds to conductive pattern carries out optical coating.
Step S160: the mask plate for being printed on metal layer pattern is placed in corresponding to silicon photo detecting unit and germanium optical detection
The position of unit carries out dry etching, removes the plated film on the position of the electrical contact of metal layer pattern.
Specifically, as shown in figure 8, in the present embodiment, the mask plate for being printed on metal layer pattern is placed in corresponding to silicon light
The position of probe unit and germanium photo detecting unit, will be on the position of exposed metal layer electrical contact by the method for dry etching
Plated film remove, complete SiGe integrated light detector production.
It in one embodiment, further include the natural silicon oxide and impurity for removing surface of silicon before step S110.
Specifically, cleaning and making herbs into wool are one of important steps of silicon wafer fabrication, and the main purpose of silicon wafer chemical cleaning is
It removes impurities on surface of silicon chip (such as certain organic matters, inorganic salts, metal, Si, SiO2 dust etc.) and cleans preventing of main purpose
Learn pollution.Common chemical has high purity water, organic solvent, hydrogen peroxide, concentrated acid, highly basic etc., wherein the oxidation of removal silicon
Object, usually with certain density HF solution, silicon wafer, which is impregnated 1 to several minutes, making herbs into wool, under room temperature is formed in silicon chip surface
Pyramidal flannelette increases absorption of the silicon to sunlight, and NaOH is usually used in monocrystalline making herbs into wool, and the mixed solutions such as Na2SiO3 are 75
~90 DEG C of 25~35min of reaction, work well.
Above-mentioned SiGe integrated light detector preparation method, germanium and silicon belong to family, and germanium material can epitaxial growth well
On a silicon substrate, SiGe is integrated on same silicon substrate and forms light and visit by epitaxial growth monocrystalline silicon and monocrystalline germanium on a silicon substrate
Survey device array, expand detector detection light range, by the optical detector of original silicon materials can only detect 300nm to
The optical detector of optical signal, germanium material in 1100nm or so range detects the letter of the light in 800nm to 1600nm or so range
Number, the optical detection of expanded scope to 400nm-1600nm enhances the performance of detector.
In one embodiment, a kind of SiGe integrated light detector, is made according to the method for above-mentioned any one.
In a more detailed embodiment, on highly doped silicon substrate, the autoxidation of surface of silicon is removed
Silicon and impurity；By the mask plate for being printed on pattern corresponding with silicon photo detecting unit be placed in growth have the silicon substrate of masking layer into
Row is lithographically formed silicon growth region, grows monocrystalline silicon in silicon growth region, obtains corresponding silicon photo detecting unit, removes silicon
The masking layer of remaining position of the substrate in addition to silicon photo detecting unit, and have the side growth masking of monocrystalline silicon in silicon substrate growth
Layer；The mask plate for being printed on pattern corresponding with germanium photo detecting unit, which is placed in growth, has the silicon substrate of masking layer to carry out photoetching
Germanium growth district is formed, grows monocrystalline germanium in germanium growth district, obtains corresponding germanium photo detecting unit, removal silicon substrate removes
The masking layer of remaining position outside germanium photo detecting unit；There is the growth masking of the side of monocrystalline silicon and monocrystalline germanium in silicon substrate growth
Layer, will be printed on and the mask plate of silicon photo detecting unit and pattern corresponding with germanium photo detecting unit is placed on masking layer；It is covering
Opposite with silicon substrate mix is carried out after covering the position progress photoetching for corresponding to silicon photo detecting unit and germanium photo detecting unit on layer
It is miscellaneous, the masking layer of remaining position of the removal silicon substrate in addition to corresponding to the position of silicon photo detecting unit and germanium photo detecting unit；?
The side that silicon substrate forms doping grows masking layer；It is corresponding that the mask plate for being printed on electrical connection via pattern is placed in masking layer
Photoetching is carried out in the position of silicon photo detecting unit and germanium photo detecting unit, is formed and silicon photo detecting unit and germanium photo detecting unit
The electrical connection path unit of electrical connection；The side deposited metal layer of electrical connection path unit is formed in silicon substrate；Gold will be printed on
The mask plate for belonging to layer pattern is placed in metal layer and corresponds to the position progress adjacent with silicon photo detecting unit and germanium photo detecting unit
Dry etching forms metal layer pattern；The mask plate for being printed on optical detection effective district pattern is placed in silicon substrate and is formed with metal
The side of layer pattern corresponds to silicon photo detecting unit and the position of germanium photo detecting unit carries out in photoetching removal optical detection effective district
Masking layer obtain optical detection effective district pattern, optical detection effective district pattern and the metal connecting with optical detection effective district unit
Layer pattern forms conductive pattern, conductive pattern covering electrical connection path unit, silicon photo detecting unit and germanium photo detecting unit；?
The side that silicon substrate is formed with conductive pattern corresponds to the position plated film of conductive pattern；The mask plate of metal layer pattern will be printed on
It is placed in and carries out dry etching corresponding to the position of silicon photo detecting unit and germanium photo detecting unit, remove the electricity of metal layer pattern
Plated film on the position of contact.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (8)
1. a kind of SiGe integrated light detector preparation method, which comprises the following steps:
Monocrystalline silicon and growth monocrystalline germanium are grown respectively in the same side of silicon substrate, obtain corresponding silicon photo detecting unit and germanium light is visited
Survey unit；
There is the side of monocrystalline silicon and monocrystalline germanium in silicon substrate growth, corresponds to the silicon photo detecting unit and the germanium light is visited
The position for surveying unit carries out the doping opposite with the silicon substrate；
It is formed in the side that the silicon substrate forms doping and is electrically connected with the silicon photo detecting unit and the germanium photo detecting unit
Electrical connection path unit；
It is formed with the side deposited metal layer of the electrical connection path unit in the silicon substrate, dry method is carried out to the metal layer
Form conductive pattern after etching processing, the conductive pattern cover the electrical connection path unit, the silicon photo detecting unit and
The germanium photo detecting unit.
2. SiGe integrated light detector preparation method according to claim 1, which is characterized in that described in the same of silicon substrate
The step of side grows monocrystalline silicon and growth monocrystalline germanium respectively, obtains corresponding silicon photo detecting unit and germanium photo detecting unit, packet
It includes:
The mask plate for being printed on pattern corresponding with silicon photo detecting unit, which is placed in growth, has the silicon substrate of masking layer to carry out photoetching
Silicon growth region is formed, monocrystalline silicon is grown in the silicon growth region, obtains corresponding silicon photo detecting unit, remove the silicon
The masking layer of remaining position of the substrate in addition to the silicon photo detecting unit, and have the side of monocrystalline silicon raw in silicon substrate growth
Long masking layer；
The mask plate for being printed on pattern corresponding with germanium photo detecting unit, which is placed in growth, has the silicon substrate of masking layer to carry out
It is lithographically formed germanium growth district, grows monocrystalline germanium in the germanium growth district, obtains corresponding germanium photo detecting unit, removes institute
State the masking layer of remaining position of the silicon substrate in addition to the germanium photo detecting unit.
3. SiGe integrated light detector preparation method according to claim 1, which is characterized in that described in the silicon substrate
Growth has the side of monocrystalline silicon and monocrystalline germanium, carries out corresponding to the position of the silicon photo detecting unit and the germanium photo detecting unit
The step of opposite with silicon substrate doping, comprising:
The silicon substrate growth have the side of monocrystalline silicon and monocrystalline germanium grow masking layer, will be printed on silicon photo detecting unit and with
The mask plate of the corresponding pattern of germanium photo detecting unit is placed on the masking layer；
The position progress photoetching for corresponding to the silicon photo detecting unit and the germanium photo detecting unit on the masking layer is laggard
The row doping opposite with the silicon substrate removes the silicon substrate and removes corresponding to the silicon photo detecting unit and the germanium optical detection
The masking layer of remaining position outside the position of unit.
4. SiGe integrated light detector preparation method according to claim 1, which is characterized in that described in the silicon substrate
The side for forming doping forms the electrical connection path unit being electrically connected with the silicon photo detecting unit and the germanium photo detecting unit
The step of, comprising:
Masking layer is grown in the side that the silicon substrate forms doping；
The mask plate that electrical connection via pattern will be printed on is placed in the masking layer corresponding to the silicon photo detecting unit and described
The position of germanium photo detecting unit carries out photoetching, forms the electricity being electrically connected with the silicon photo detecting unit and the germanium photo detecting unit
Connecting path unit.
5. SiGe integrated light detector preparation method according to claim 4, which is characterized in that described in the silicon substrate
It is formed with the side deposited metal layer of the electrical connection path unit, is led to being formed after metal layer progress dry etching processing
Electrical pattern, the conductive pattern cover the electrical connection path unit, the silicon photo detecting unit and the germanium photo detecting unit
The step of, comprising:
The side deposited metal layer of the electrical connection path unit is formed in the silicon substrate；
The mask plate for being printed on metal layer pattern is placed in the metal layer to correspond to and the silicon photo detecting unit and the germanium
The adjacent position of photo detecting unit carries out dry etching, forms metal layer pattern；
The mask plate for being printed on optical detection effective district pattern is placed in the side that the silicon substrate is formed with the metal layer pattern
Covering in photoetching removal optical detection effective district is carried out corresponding to the position of the silicon photo detecting unit and the germanium photo detecting unit
It covers layer and obtains optical detection effective district pattern, the optical detection effective district pattern and the gold connecting with optical detection effective district unit
Belong to layer pattern and forms conductive pattern.
6. SiGe integrated light detector preparation method according to claim 1, which is characterized in that described in the silicon substrate
It is formed with the side deposited metal layer of the electrical connection path unit, is led to being formed after metal layer progress dry etching processing
After the step of electrical pattern, further includes:
Correspond to the position plated film of the conductive pattern in the side that the silicon substrate is formed with conductive pattern；
The mask plate for being printed on metal layer pattern is placed in described corresponding to the silicon photo detecting unit and germanium light spy
The position for surveying unit carries out dry etching, removes the plated film on the position of the electrical contact of the metal layer pattern.
7. SiGe integrated light detector preparation method according to claim 1, which is characterized in that described in the same of silicon substrate
Side grows monocrystalline silicon and growth monocrystalline germanium respectively, the step of obtaining corresponding silicon photo detecting unit and germanium photo detecting unit it
Before, further includes:
Remove the natural silicon oxide and impurity of surface of silicon.
8. a kind of SiGe integrated light detector, which is characterized in that method system according to any one of claims 1-7
At.
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