CN109722692A - A method of reducing military thick film, film chip resistor solderability fraction defective - Google Patents
A method of reducing military thick film, film chip resistor solderability fraction defective Download PDFInfo
- Publication number
- CN109722692A CN109722692A CN201711033512.8A CN201711033512A CN109722692A CN 109722692 A CN109722692 A CN 109722692A CN 201711033512 A CN201711033512 A CN 201711033512A CN 109722692 A CN109722692 A CN 109722692A
- Authority
- CN
- China
- Prior art keywords
- resistor
- solderability
- seconds
- military
- fraction defective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention discloses a kind of methods for reducing military thick film, film chip resistor solderability fraction defective, comprising the following steps: (1) pre-treatment；(2) it washes；(3) nickel is handled；(4) it washes: the resistor after nickel plating being sequentially placed into three rinsing bowls and is cleaned, scavenging period in each rinsing bowl is 120 seconds, when washing in rinsing bowl, deionized water is continuously added into rinsing bowl, the flow of the deionized water is not less than 10L/ minutes；(5) acid activation；(6) tin-lead is handled；(7) it washes；(8) it neutralizes: the resistor after step (7) washing is put into neutralisation treatment in neutralizer；(9) it washes: the resistor after neutralisation treatment is washed 180 seconds；(10) it dries.The present invention reduces military products solderability fraction defective to 1% or so, reduces military products rework rate, saves electroplating cost；And electroplating resistor quality is improved, resistor hidden danger of quality is reduced, complaint of the client to resistor solderability is reduced.
Description
Technical field
The invention belongs to electronic device production technical fields, and in particular to a kind of to reduce military thick film, film plate resistor
The method of device solderability fraction defective.
Background technique
Thick film, film chip resistor after plating, when doing solderability, have 3% or so batch solderability bad, aobvious
Micro- microscopic observation failed test sample, locally upper tin is bad for discovery failed test sample.
Summary of the invention
To solve the above-mentioned problems, military thick film, film chip resistor solderability are reduced not the present invention provides a kind of
The method of yield improves the qualification rate of resistor solderability.
The technical solution of the present invention is as follows: a kind of method for reducing military thick film, film chip resistor solderability fraction defective,
The following steps are included:
(1) pre-treatment pre-treatment: is carried out to resistor；
(2) it washes: the resistor after progress pre-treatment is washed；
(3) nickel is handled: corresponding electroplating current is selected according to product specification, model, to the resistor nickel plating after washing；
(4) it washes: the resistor after nickel plating being sequentially placed into three rinsing bowls and is cleaned, in each rinsing bowl
Scavenging period is 120 seconds, and when washing in rinsing bowl, deionized water, the deionization are continuously added into rinsing bowl
The flow of water is not less than 10L/ minutes；
(5) acid activation: the resistor after washing via step (4) carries out acid activation；
(6) tin-lead is handled: being selected corresponding electroplating current according to product specification, model, is plated the tin-lead time 120 minutes；
(7) wash: by tin-lead, treated that resistor is sequentially placed into three rinsing bowls cleans, each rinsing bowl
In scavenging period be 180 seconds；
(8) it neutralizes: the resistor after step (7) washing is put into neutralisation treatment in neutralizer；
(9) it washes: the resistor after neutralisation treatment is washed 180 seconds；
(10) it dries: by the resistor after step (9) washing at 90 DEG C of temperature, drying 16min.
Preferably, the mass concentration of the pretreatment liquid is 30%, the processing time is 180 seconds.
Preferably, washing time is 180 seconds in the step (2).
Preferably, plating time 180 minutes in the step (3).
Preferably, in the step (5) acid activation liquid mass concentration be 30~35%, the acid activation time be 120~
180 seconds.
Preferably, the mass concentration of acid activation liquid is 35% in the step (5), the acid activation time is 180 seconds.
Preferably, the mass concentration of neutralizer is 30% in the step (8), neutralizing the time is 180 seconds.
The present invention makees advantageous embodiment in prior art, wherein used reagent solution, which is all made of in existing method, to be made
Reagent solution.In order to enhance the removal of electroless nickel layer passivating film, the present invention will improve the proportion of acid activation liquid by test
Concentration is 35%；And acid activation liquid is monthly replaced once in existing processing method, and by test, acid activation liquid of the present invention is current
It is to replace 1 time for 15 days；And the existing acid activation time is 120 seconds, the military products acid activation time is 180 seconds in the present invention.
In order to enable cleaning after military products resistor electronickelling thoroughly, the generation of nickel layer passivating film is reduced:
(1) existing product flow of ejected wash water after nickel plating is not specified by, and when flow of ejected wash water is small when big, passes through examination
It tests, by the flow set of ejected wash water to have flowmeter control not less than 10L/ minutes in the present invention, when cleaning water flow is lower than
At 10L/ minutes, nickel plating product must not be cleaned.
(2) purity of water is not specified by rinse bath after existing product nickel plating, low when high when the purity of water in rinse bath.It is logical
Overtesting, the purity of water has conductivity meter control in rinse bath at present, is lower than specified value, plating employee need to be to the water in rinse bath
It is replaced,
(3) washing only 2 times after the nickel of existing military products, the time is 120 seconds/time.Pass through test, military products resistor of the present invention
Washing is 3 times after nickel plating, and scavenging period is unchanged.
Treated in order to shorten military products nickel the dead time, reduces the generation of nickel layer passivating film, the present invention is produced by test
Product Nickel Plating Treatment finishes, and is changed in 20 minutes to carry out by carrying out tin-lead processing in prior art 30 minutes after cleaning up
Tin-lead processing, and do not allow to park for a long time.
Compared with prior art, the beneficial effects of the present invention are embodied in:
The present invention reduces military products solderability fraction defective to 1% or so, reduces military products rework rate, saves electroplating cost；And
Electroplating resistor quality is improved, resistor hidden danger of quality is reduced, reduces complaint of the client to resistor solderability.
Detailed description of the invention
Fig. 1 is the product situation after prior art processing.
Fig. 2 is using the product situation after present invention processing.
Specific embodiment
Embodiment 1
A method of reducing military thick film, film chip resistor solderability fraction defective, comprising the following steps:
(1) pre-treatment pre-treatment: is carried out to resistor；
(2) it washes: the resistor after progress pre-treatment is washed；
(3) nickel is handled: corresponding electroplating current is selected according to product specification, model, to the resistor nickel plating after washing；
(4) it washes: the resistor after nickel plating being sequentially placed into three rinsing bowls and is cleaned, in each rinsing bowl
Scavenging period is 120 seconds, and when washing in rinsing bowl, deionized water, the deionization are continuously added into rinsing bowl
The flow of water is not less than 10L/ minutes；
(5) acid activation: the resistor after washing via step (4) carries out acid activation；
(6) tin-lead is handled: being selected corresponding electroplating current according to product specification, model, is plated the tin-lead time 120 minutes；
(7) wash: by tin-lead, treated that resistor is sequentially placed into three rinsing bowls cleans, each rinsing bowl
In scavenging period be 180 seconds；
(8) it neutralizes: the resistor after step (7) washing is put into neutralisation treatment in neutralizer；
(9) it washes: the resistor after neutralisation treatment is washed 180 seconds；
(10) it dries: by the resistor after step (9) washing at 90 DEG C of temperature, drying 16min.
Wherein the mass concentration of pretreatment liquid is 30%, and the processing time is 180 seconds.
Washing time is 180 seconds in step (2).
Plating time 180 minutes in step (3).
The mass concentration of acid activation liquid is 30~35% in step (5), and the acid activation time is 120~180 seconds.
The mass concentration of acid activation liquid is 35% in step (5), and the acid activation time is 180 seconds.
The mass concentration of neutralizer is 30% in step (8), and neutralizing the time is 180 seconds.
In order to enhance the removal of electroless nickel layer passivating film, the present invention will improve the matched proportion density of acid activation liquid by test
It is 35%；And acid activation liquid is monthly replaced once in existing processing method, and by test, acid activation liquid of the present invention is currently 15
Its replacement 1 time；And the existing acid activation time is 120 seconds, the military products acid activation time is 180 seconds in the present invention.
In order to enable cleaning after military products resistor electronickelling thoroughly, the generation of nickel layer passivating film is reduced:
(1) existing product flow of ejected wash water after nickel plating is not specified by, and when flow of ejected wash water is small when big, passes through examination
It tests, by the flow set of ejected wash water to have flowmeter control not less than 10L/ minutes in the present invention, when cleaning water flow is lower than
At 10L/ minutes, nickel plating product must not be cleaned.
(2) purity of water is not specified by rinse bath after existing product nickel plating, low when high when the purity of water in rinse bath.It is logical
Overtesting, the purity of water has conductivity meter control in rinse bath at present, is lower than specified value, plating employee need to be to the water in rinse bath
It is replaced,
(3) washing only 2 times after the nickel of existing military products, the time is 120 seconds/time.Pass through test, military products resistor of the present invention
Washing is 3 times after nickel plating, and scavenging period is unchanged.
Treated in order to shorten military products nickel the dead time, reduces the generation of nickel layer passivating film, the present invention is produced by test
Product Nickel Plating Treatment finishes, and is changed in 20 minutes to carry out by carrying out tin-lead processing in prior art 30 minutes after cleaning up
Tin-lead processing, and do not allow to park for a long time.
Claims (7)
1. a kind of method for reducing military thick film, film chip resistor solderability fraction defective, which is characterized in that including following step
It is rapid:
(1) pre-treatment pre-treatment: is carried out to resistor；
(2) it washes: the resistor after progress pre-treatment is washed；
(3) nickel is handled: corresponding electroplating current is selected according to product specification, model, to the resistor nickel plating after washing；
(4) it washes: the resistor after nickel plating being sequentially placed into three rinsing bowls and is cleaned, the cleaning in each rinsing bowl
Time is 120 seconds, and when washing in rinsing bowl, deionized water is continuously added into rinsing bowl, the deionized water
Flow is not less than 10L/ minutes；
(5) acid activation: the resistor after washing via step (4) carries out acid activation；
(6) tin-lead is handled: being selected corresponding electroplating current according to product specification, model, is plated the tin-lead time 120 minutes；
(7) wash: by tin-lead, treated that resistor is sequentially placed into three rinsing bowls cleans, in each rinsing bowl
Scavenging period is 180 seconds；
(8) it neutralizes: the resistor after step (7) washing is put into neutralisation treatment in neutralizer；
(9) it washes: the resistor after neutralisation treatment is washed 180 seconds；
(10) it dries: by the resistor after step (9) washing at 90 DEG C of temperature, drying 16min.
2. the method for reducing military thick film, film chip resistor solderability fraction defective as described in claim 1, feature exist
In the mass concentration of the pretreatment liquid is 30%, and the processing time is 180 seconds.
3. the method for reducing military thick film, film chip resistor solderability fraction defective as described in claim 1, feature exist
In washing time is 180 seconds in the step (2).
4. the method for reducing military thick film, film chip resistor solderability fraction defective as described in claim 1, feature exist
In plating time 180 minutes in the step (3).
5. the method for reducing military thick film, film chip resistor solderability fraction defective as described in claim 1, feature exist
In the mass concentration of acid activation liquid is 30~35% in the step (5), and the acid activation time is 120~180 seconds.
6. the method for reducing military thick film, film chip resistor solderability fraction defective as claimed in claim 5, feature exist
In the mass concentration of acid activation liquid is 35% in the step (5), and the acid activation time is 180 seconds.
7. the method for reducing military thick film, film chip resistor solderability fraction defective as described in claim 1, feature exist
In the mass concentration of neutralizer is 30% in the step (8), and neutralizing the time is 180 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711033512.8A CN109722692A (en) | 2017-10-30 | 2017-10-30 | A method of reducing military thick film, film chip resistor solderability fraction defective |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711033512.8A CN109722692A (en) | 2017-10-30 | 2017-10-30 | A method of reducing military thick film, film chip resistor solderability fraction defective |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109722692A true CN109722692A (en) | 2019-05-07 |
Family
ID=66291293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711033512.8A Pending CN109722692A (en) | 2017-10-30 | 2017-10-30 | A method of reducing military thick film, film chip resistor solderability fraction defective |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109722692A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5599701A (en) * | 1979-01-26 | 1980-07-30 | Matsushita Electric Ind Co Ltd | Method of manufacturing electrode of chip resistor |
| CN1861842A (en) * | 2005-04-20 | 2006-11-15 | 罗门哈斯电子材料有限公司 | Immersion method |
| CN1924091A (en) * | 2005-08-22 | 2007-03-07 | 罗门哈斯电子材料有限公司 | Aqueous solution for surface treatment of tin films and method for preventing discoloration of a tin film surface |
| US20070275262A1 (en) * | 2006-05-23 | 2007-11-29 | Dechao Lin | Reducing formation of tin whiskers on a tin plating layer |
| CN101593589A (en) * | 2009-04-30 | 2009-12-02 | 中国振华集团云科电子有限公司 | The manufacture method of JANS plate type thick film resistor |
| CN205443483U (en) * | 2016-03-21 | 2016-08-10 | 苏州市汉宜化学有限公司 | Tin nickel alloy plating layer structure of high weldbility |
-
2017
- 2017-10-30 CN CN201711033512.8A patent/CN109722692A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5599701A (en) * | 1979-01-26 | 1980-07-30 | Matsushita Electric Ind Co Ltd | Method of manufacturing electrode of chip resistor |
| CN1861842A (en) * | 2005-04-20 | 2006-11-15 | 罗门哈斯电子材料有限公司 | Immersion method |
| CN1924091A (en) * | 2005-08-22 | 2007-03-07 | 罗门哈斯电子材料有限公司 | Aqueous solution for surface treatment of tin films and method for preventing discoloration of a tin film surface |
| US20070275262A1 (en) * | 2006-05-23 | 2007-11-29 | Dechao Lin | Reducing formation of tin whiskers on a tin plating layer |
| CN101593589A (en) * | 2009-04-30 | 2009-12-02 | 中国振华集团云科电子有限公司 | The manufacture method of JANS plate type thick film resistor |
| CN205443483U (en) * | 2016-03-21 | 2016-08-10 | 苏州市汉宜化学有限公司 | Tin nickel alloy plating layer structure of high weldbility |
Non-Patent Citations (1)
| Title |
|---|
| YUSONG5: ""电子元器件电镀解决方案一"", 《道客巴巴HTTP://WWW.DOC88.COM/P-4542081820249.HTML》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI571539B (en) | Electroplating bath analysis | |
| CN106567114A (en) | Electroplating method for spraying and activating of surface of ABS plastic | |
| CN102010136B (en) | Chemical plating Ni-P alloy technology of glass micro beads | |
| CN102456549B (en) | Indium phosphide wafer and surface cleaning method thereof | |
| CN103695976A (en) | Treatment method for copper product before electronickelling | |
| CN106435678A (en) | Electroplating pretreatment method and equipment for neodymium-iron-boron magnet | |
| CN104451797A (en) | Tinning processing method for Bi2Te3 matrix and supplement | |
| MXPA05003831A (en) | Pretreatment method for electroless plating material and method for producing member having plated coating. | |
| CN105780074A (en) | Steel piece cyanide-free copper plating method adopting applied magnetic field | |
| CN106283141A (en) | Bullion rose golden surface processes plating solution, preparation method and electro-plating method thereof | |
| CN101899693B (en) | Method for locally plating rhenium on oxygen-free copper matrix | |
| CN109722692A (en) | A method of reducing military thick film, film chip resistor solderability fraction defective | |
| KR20210020113A (en) | Electrolytic treatment method for coating stainless steel objects | |
| CN111020657A (en) | Method for electroplating molybdenum part with gold | |
| CN108642481A (en) | A kind of process of plastic cement chemical sinking nickel | |
| CN111812077B (en) | Preparation method of gold-nano-thorn Raman-enhanced detection chip | |
| CN107779939A (en) | A kind of cleaning method of electro-coppering cylinder anode | |
| CN105198502A (en) | Metallic barrel nickel plating method for ceramic tubes for ceramic gas discharge tubes | |
| CN207452278U (en) | Workpiece cleans line | |
| CN106702448A (en) | Pretreatment method of nickel material electrogilding | |
| CN101707185A (en) | Method for electroplating lead frame | |
| CN101130879A (en) | Electroforming net preparation method | |
| KR20130047078A (en) | Surface treatment method for nut bore and surface treatment apparatus for nut bore | |
| CN101624716A (en) | Method for pretreating aluminum tubes before electroplating | |
| RU2709913C1 (en) | Method of applying galvanic coatings on complex-profile parts |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190507 |