CN109721049B - Graphene strip with neat edge, and preparation method and application thereof - Google Patents
Graphene strip with neat edge, and preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses a graphene strip with a neat edge, and a preparation method and application thereof. The preparation method comprises the following steps: carrying out photoetching and patterning on graphene, growing a metal film on the patterned graphene, removing the metal film, and carrying out hydrogen plasma etching treatment on the patterned graphene to obtain a graphene strip with a neat edge. According to the method, a large number of defects are made by growing metal on unprotected graphene, so that the etching rate is greatly improved, and then the anisotropic etching mechanism of the hydrogen plasma on the graphene is utilized, so that the finally obtained graphene strip has a geometric structure with a sawtooth-shaped edge as a main factor, and the obtained graphene strip has high carrier mobility and low resistivity; meanwhile, the process is simple to operate and compatible with the modern semiconductor processing process, the performance of the device based on the graphene strip is expected to be improved, and the application prospect is wide.
Description
Technical Field
The invention relates to a preparation method of a graphene strip, in particular to a method for preparing a graphene strip with a sawtooth-shaped neat edge by using hydrogen plasma etching combined with a coating technology and application thereof, and belongs to the technical field of nano materials.
Background
The graphene is formed by the SP of carbon atoms2The honeycomb-shaped monoatomic layer two-dimensional crystal formed by hybridization is expected to have good application prospect on transparent electrodes, high-performance detectors, photoelectric devices and wearable equipment due to the unique energy band structure and excellent physical properties. However, due to the characteristic of zero energy gap of graphene, no off state exists, and the application of graphene in the field of semiconductor devices is limited. The graphene strip, especially the graphene nanoribbon, is a way to open the energy gap, and is a necessary way for miniaturization and high integration of devices, and has been widely paid attention to and researched. Many methods of preparing graphene nanoribbons have been developed in recent years, such as: the mask is combined with oxygen plasma etching, the carbon nano tube is cut open, and the method of direct growth on a patterned substrate or chemical synthesis by utilizing a molecular precursor is adopted. However, the strips prepared by the methods have the defects of uneven edges, relatively complex process, uncontrollable length and width of the strips, difficult positioning and the like. Therefore, it is very important to develop a preparation method with controllable length and width and neat strip edge.
Disclosure of Invention
The invention mainly aims to provide a graphene strip with neat edges, a preparation method and application thereof, so that the defects in the prior art are overcome.
In order to achieve the purpose, the invention adopts the following technical scheme:
the embodiment of the invention provides a preparation method of a graphene strip with neat edges, which comprises the following steps:
carrying out photoetching patterning on graphene;
growing a metal film on the patterned graphene, and then removing the metal film;
and carrying out hydrogen plasma etching treatment on the patterned graphene to obtain a graphene strip with a neat edge.
In some more specific embodiments, the preparation method further comprises: before the photolithography patterning, the graphene is transferred to a substrate.
The embodiment of the invention also provides the graphene strip with the neat edge prepared by the method.
Preferably, the edges of the graphene strips are in a regular pattern or in a special shape.
Preferably, the graphene strips have a geometry with saw-tooth type edges predominating.
The embodiment of the invention also provides application of the graphene strip with the neat edge in the field of preparation of photoelectric devices, sensing devices, low-power-consumption devices or electronic interconnection.
Compared with the prior art, the invention has the beneficial effects that:
according to the method, hydrogen plasma etching is combined with a coating technology, a large number of defects are made by growing metal on unprotected graphene, so that the etching rate is greatly improved, the graphene under the protection of a mask cannot be influenced, and then the anisotropic etching mechanism of the hydrogen plasma on the graphene is utilized, so that the finally obtained graphene strip has a geometric structure with a sawtooth-shaped edge being dominant. The method does not damage the lattice structure of the graphene strip in the preparation process, can maintain the intrinsic property of the graphene strip to the maximum extent, and reduces scattering caused by edge disorder due to neat edges, so that the graphene strip has high conductivity, carrier mobility and low resistivity. Moreover, the method can be used for preparing the strip with adjustable width and large length-width ratio, is simple in process operation and compatible with the modern semiconductor processing process, is expected to improve the performance of the device based on the graphene strip, and has wide application prospect in the aspects of electronic interconnection, photoelectric devices, sensing devices and low power consumption.
Drawings
Fig. 1 is a scanning electron microscope image of a graphene strip with a neat edge in an exemplary embodiment of the invention.
Fig. 2 a-2 b are polarization raman plots of edge-aligned graphene ribbons obtained in example 1 of the present invention.
Fig. 3 is a schematic diagram of the field effect test results of the edge-aligned graphene strips obtained in example 1 of the present invention.
Fig. 4 is a graph showing the voltammetry test results of the edge-aligned graphene strip obtained in example 1 of the present invention.
FIG. 5 is a scanning electron micrograph of a sample which was not etched by the hydrogen plasma in comparative example 1 of the present invention.
FIG. 6 is a scanning electron micrograph of a sample in which the plating technique was not employed in comparative example 2 of the present invention.
Detailed Description
As described above, in view of the defects of the prior art, the inventors of the present invention have made extensive studies and practice to provide a technical solution of the present invention, which mainly utilizes hydrogen plasma etching in combination with a plating technique to prepare a zigzag edge graphene strip. The technical solution, its implementation and principles, etc. will be further explained as follows.
As an aspect of the present invention, a method for preparing a graphene strip with a neat edge includes:
carrying out photoetching patterning on graphene;
growing a metal film on the patterned graphene, and then removing the metal film;
and carrying out hydrogen plasma etching treatment on the patterned graphene to obtain graphene strips (also called graphene nano strips) with neat edges.
In some more specific embodiments, the preparation method further comprises: before the photolithography patterning, the graphene is transferred to a substrate.
Specifically, the preparation method comprises the following steps: and transferring the graphene onto a substrate by adopting common photoetching or electron beam photoetching patterning, and then exposing a required pattern by utilizing photoetching or electron beam photoetching, wherein the pattern size can be in a nanometer scale or a micrometer scale. Namely, a mask with a certain designed pattern is formed on the large-area graphene by using common photoetching or electron beam photoetching.
Further, the graphene may be prepared by any one or a combination of two or more of a chemical vapor deposition method, a mechanical exfoliation method, an epitaxial growth method, a graphite oxide reduction method, and graphite intercalation dissociation or other methods, but is not limited thereto.
Further, the substrate may be a silicon wafer, gallium nitride, boron nitride, mylar, polyimide film, or other rigid, flexible or organic, inorganic substrate, preferably a silicon dioxide/silicon substrate, but is not limited thereto.
In some more specific embodiments, the preparation method comprises: and depositing a metal film on the patterned graphene by adopting a coating technology, and removing the metal film by using a remover.
Preferably, the coating technique may be electron beam evaporation, thermal evaporation, magnetron sputtering, or the like, but is not limited thereto.
Preferably, the thickness of the metal film is 1 to 500 nm. A layer of metal film with the thickness of 1 nm-500 nm is plated on the developed graphene by using a film plating technology, and the working temperature is required to be reduced as much as possible in order to prevent the photoresist from being greatly influenced in the film plating process.
Preferably, the growth of the metal film may be electron beam evaporation, thermal evaporation, sputtering or other growth methods, and the selected metal may be zinc, aluminum, iron, magnesium, etc., or may be other metals, but is not limited thereto.
Further, the removing agent includes a solution capable of dissolving away the metal film, such as a dilute acid solution, a dilute alkali solution, or other solutions.
In some more specific embodiments, the preparation method comprises: and performing hydrogen plasma etching treatment on the patterned graphene for 1-60 min at the temperature of room temperature to 200 ℃, the power of 50-300W, the flow of 10-100 SCCM and the pressure of 10-600 Pa to obtain a graphene strip with a neat edge. Wherein, the vacuum pump is utilized to make the cavity in a low pressure state in the etching process.
Further, the hydrogen plasma may be generated by inductive coupling, electrode pressurization, and the like, but is not limited thereto.
Further, the hydrogen plasma etching process may be performed in a range of room temperature to 200 ℃, without being limited to a specific temperature.
In some more specific embodiments, the preparation method further comprises: and cleaning the graphene obtained after the hydrogen plasma etching treatment by using a cleaning agent.
The cleaning agent may be acetone, isopropyl alcohol, or the like, but is not limited thereto.
In some more specific embodiments, the method of making can comprise: patterning large-area graphene transferred to a silicon dioxide/silicon substrate by common photoetching or electron beam photoetching, depositing a layer of metal film on the patterned graphene by a film coating technology, dissolving the metal layer by dilute acid, dilute alkali or other solutions, and then etching the graphene along the crystal direction by using hydrogen plasma to obtain a graphene strip with a neat edge supported on a silicon wafer.
Specifically, the preparation method may include the steps of:
firstly, a mask with a certain designed pattern is formed on large-area graphene by utilizing common photoetching or electron beam photoetching.
Then, a layer of metal film with the thickness of 1 nm-500 nm is plated on the developed sample by using a film plating technology, and the working temperature is reduced as much as possible in order to prevent the photoresist from being greatly influenced in the film plating process.
The plated metal layer is then dissolved away using dilute acid, dilute base, or other solution.
And finally, etching the exposed graphene by using hydrogen plasma, only leaving the graphene under the protection of the mask, and washing away the photoresist by using acetone and isopropanol to obtain the graphene strip with designed width and length and neat edge.
In a more specific embodiment, the preparation method specifically comprises the following steps:
firstly, transferring graphene onto a target substrate by a dry method or a wet method, then coating glue, exposing a desired pattern by using common photoetching or electron beam photoetching, and developing in a developing solution. And secondly, on the basis of development, growing active metal with a certain thickness on the sample by using electron beam evaporation, thermal evaporation, sputtering or other modes. And thirdly, immersing the graphene with active metal growing in a certain thickness in a dilute acid solution to remove the active metal layer. And fourthly, etching the graphene without the active metal layer in hydrogen plasma for 1 to 60 minutes at a power of between 50 and 300W, reacting the hydrogen plasma with the exposed graphene to generate hydrocarbon to be pumped away, and not affecting the part protected by the photoresist. And fifthly, dissolving the photoresist by using acetone and isopropanol to obtain the graphene strip with a neat edge. According to the method, a metal layer grows on unprotected graphene, so that a large number of defects are produced, the etching rate is greatly improved, and then the anisotropic etching mechanism of the graphene by using hydrogen plasma is utilized, so that the finally obtained graphene strip has a geometric structure with a sawtooth-shaped edge being dominant.
Another aspect of embodiments of the present invention provides edge-aligned graphene ribbons prepared by the foregoing methods.
Preferably, the prepared graphene strip can be neat in edge, and can also be in other various regular patterns or irregular shapes, but is not limited to the patterns.
Preferably, the graphene strips have a geometry with saw-tooth type edges predominating.
Preferably, the graphene strips with neat edges are periodically and uniformly distributed, the line width of the graphene strips can be tens of nanometers to tens of micrometers, and the aspect ratio is 1: 1-2000: 1, having a resistivity of 0.71 to 4.4 k.OMEGA.and a mobility of 566.05 to 1361.3cm2v-1s-1. The width of the strips and the spacing between adjacent strips can be adjusted by the layout design before photolithography.
In another aspect of the embodiments of the present invention, there is also provided a use of the graphene strip with a neat edge in the field of manufacturing a photoelectric device, a sensor device, a low power consumption device, or an electronic interconnect.
By the technical scheme, the method utilizes hydrogen plasma etching and a coating technology, a large number of defects are made by growing metal on the unprotected graphene, so that the etching rate is greatly improved, the graphene under the protection of the mask cannot be influenced, and then the anisotropic etching mechanism of the hydrogen plasma on the graphene is utilized, so that the finally obtained graphene strip has a geometric structure with a sawtooth-shaped edge being dominant. The method does not damage the lattice structure of the graphene strip in the preparation process, can maintain the intrinsic property of the graphene strip to the maximum extent, and reduces scattering caused by edge disorder due to neat edges, so that the graphene strip has high conductivity, carrier mobility and low resistivity. Moreover, the method can be used for preparing the strip with adjustable width and large length-width ratio, is simple in process operation and compatible with the modern semiconductor processing process, is expected to improve the performance of the device based on the graphene strip, and has wide application prospect in the aspects of electronic interconnection, photoelectric devices, sensing devices and low power consumption.
The technical solution of the present invention will be described in further detail with reference to several preferred embodiments and the accompanying drawings, but the present invention is not limited to the following embodiments.
Example 1
The method for preparing the graphene strip with the neat edge comprises the following steps:
(1) the substrate material is a silicon wafer which grows 300nm silicon dioxide through thermal oxidation, and graphene is moved after the substrate is cleaned.
(2) And (3) performing common photoetching or electron beam photoetching, coating glue on the sample with the graphene transferred on the substrate, and then exposing a required pattern by utilizing photoetching or electron beam photoetching, wherein the pattern size can be in a nanometer scale or a micrometer scale.
(3) And (3) growing a metal film: magnetron sputtering was used to grow zinc to a thickness of 20nm on the photo-etched and developed samples.
(4) Hydrogen plasma etching: at room temperature, pure hydrogen plasma was used, the power was set to 50W, 100SCCM flow was used, the gas pressure was 600Pa, and the etching time was 5 minutes. And a vacuum pump is utilized to enable the cavity to be in a low-pressure state in the etching process. And after etching is finished, cleaning the photoresist by using acetone and isopropanol to obtain the graphene strip with a neat edge.
Example 2
The method for preparing the graphene strip with the neat edge comprises the following steps:
(1) the substrate material is a silicon wafer with 100nm silicon dioxide grown by thermal oxidation, and graphene is moved after the substrate is cleaned.
(2) And (3) performing common photoetching or electron beam photoetching, coating glue on the sample with the graphene transferred on the substrate, and then exposing a required pattern by utilizing photoetching or electron beam photoetching, wherein the pattern size can be in a nanometer scale or a micrometer scale.
(3) And (3) growing a metal film: magnesium was grown to a thickness of 1nm on the photo-etched and developed samples using magnetron sputtering.
(4) Hydrogen plasma etching: at room temperature, pure hydrogen plasma is utilized, the power is set to be 100W, 10SCCM flow is adopted, the air pressure is 60Pa, and the etching time is 60 minutes. And a vacuum pump is utilized to enable the cavity to be in a low-pressure state in the etching process. And after etching is finished, cleaning the photoresist by using acetone and isopropanol to obtain the graphene strip with a neat edge.
Example 3
The method for preparing the graphene strip with the neat edge comprises the following steps:
(1) the substrate material is a gallium nitride sheet, and graphene is transferred after the substrate is cleaned.
(2) And (3) performing common photoetching or electron beam photoetching, coating glue on the sample with the graphene transferred on the substrate, and then exposing a required pattern by utilizing photoetching or electron beam photoetching, wherein the pattern size can be in a nanometer scale or a micrometer scale.
(3) And (3) growing a metal film: zinc was grown to a thickness of 500nm on the photo-etched and developed samples using magnetron sputtering.
(4) Hydrogen plasma etching: at room temperature, pure hydrogen plasma was used, the power was set at 300W, a flow of 50SCCM was used, the gas pressure was 300Pa, and the etching time was 1 minute. And a vacuum pump is utilized to enable the cavity to be in a low-pressure state in the etching process. And after etching is finished, cleaning the photoresist by using acetone and isopropanol to obtain the graphene strip with a neat edge.
Example 4
The method for preparing the graphene strip with the neat edge comprises the following steps:
(1) the substrate material is a gallium nitride sheet, and graphene is transferred after the substrate is cleaned.
(2) And (3) performing common photoetching or electron beam photoetching, coating glue on the sample with the graphene transferred on the substrate, and then exposing a required pattern by utilizing photoetching or electron beam photoetching, wherein the pattern size can be in a nanometer scale or a micrometer scale.
(3) And (3) growing a metal film: aluminum was grown to a thickness of 300nm on the photo-etched and developed samples using magnetron sputtering.
(4) Hydrogen plasma etching: at 200 ℃, pure hydrogen plasma is utilized, the power is set to be 150W, the flow of 80SCCM is adopted, the air pressure is 300Pa, and the etching time is 10 minutes. And a vacuum pump is utilized to enable the cavity to be in a low-pressure state in the etching process. And after etching is finished, cleaning the photoresist by using acetone and isopropanol to obtain the graphene strip with a neat edge.
Example 5
The method for preparing the graphene strip with the neat edge comprises the following steps:
(1) the substrate material is a silicon wafer which grows 300nm silicon dioxide through thermal oxidation, and graphene is moved after the substrate is cleaned.
(2) And (3) performing common photoetching or electron beam photoetching, coating glue on the sample with the graphene transferred on the substrate, and then exposing a required pattern by utilizing photoetching or electron beam photoetching, wherein the pattern size can be in a nanometer scale or a micrometer scale.
(3) And (3) growing a metal film: aluminum was grown to a thickness of 100nm on the photo-etched and developed samples using magnetron sputtering.
(4) Hydrogen plasma etching: at 100 ℃, pure hydrogen plasma is utilized, the power is set to be 200W, 30SCCM flow is adopted, the air pressure is 200Pa, and the etching time is 30 minutes. And a vacuum pump is utilized to enable the cavity to be in a low-pressure state in the etching process. And after etching is finished, cleaning the photoresist by using acetone and isopropanol to obtain the graphene strip with a neat edge.
Further, the inventors of the present invention have characterized the edge-aligned graphene strip prepared by the process described in example 1, and have studied the mechanism thereof, specifically as follows:
(1) characterization of graphene strip morphology
Referring to fig. 1, it can be seen that the graphene stripes with neat edges prepared in example 1 are periodically and uniformly distributed, and the width of a single stripe is about 150 nm. The width of the strips and the spacing between adjacent strips can be adjusted by the layout design before photolithography.
(2) Characterization of graphene strip edge structure
The graphene edge generally has two edge structures, namely a sawtooth type edge structure and an armchair type edge structure, and in order to determine the edge structure information of the graphene strip prepared by the process, the inventor uses a polarization Raman spectrum for characterization. The ratio of the D peak intensity to the G peak intensity was found (I)D/IG) As the angle between the polarization direction of the polarized light and the strip edge changes, as shown in fig. 2a and 2 b. The ratio of the D peak intensity to the G peak intensity is the largest when the polarization direction is parallel to the strip edge, the ratio of the D peak intensity to the G peak intensity is the smallest when the polarization direction is perpendicular to the strip edge, and the maximum value is 1.4 times of the minimum value, so that the graphene strip edge prepared by the process can be judged to be the edge with the sawtooth structure as the dominant.
(3) Characterization of electrical properties of graphene ribbons
To further evaluate the quality of the graphene strips prepared in example 1, the inventors also prepared grapheneThe strips are made into graphene strip field effect devices through a standard photoetching process, and the electron transport characteristics of the graphene strip field effect devices are tested. As shown in FIG. 3, the field effect mobility measured was as high as 1332.2cm at room temperature2V-1s-1. As shown in fig. 4, the resistivity at room temperature and normal pressure was 0.782k Ω. From the above test results of mobility and resistivity, it can be derived: the graphene strip prepared in the embodiment 1 of the invention has high quality and has potential application value in the fields of photoelectric devices, sensing devices, electronic interconnection and the like.
Comparative example 1
The comparison example does not adopt a hydrogen plasma etching technology, and comprises the following steps:
(1) the substrate material is a silicon wafer which grows 300nm silicon dioxide through thermal oxidation, and graphene is moved after the substrate is cleaned.
(2) And (3) performing common photoetching or electron beam photoetching, coating glue on the sample with the graphene transferred on the substrate, and then exposing a required pattern by utilizing photoetching or electron beam photoetching, wherein the pattern size can be in a nanometer scale or a micrometer scale.
(3) And (3) growing a metal film: magnetron sputtering was used to grow zinc to a thickness of 40nm on the photo-etched and developed samples.
(4) Instead of using hydrogen plasma etching, dilute hydrochloric acid is directly used to dissolve zinc, and then acetone and isopropanol are used to remove the photoresist, and it can be seen from fig. 5 that the exposed graphene is not etched, but is still a continuous film with non-aligned edges together with the graphene protected by the photoresist. The test shows that the electrical properties such as mobility and resistivity are obviously not as good as those of the graphene strips with neat edges obtained in examples 1-5.
Comparative example 2
The comparative example does not adopt a coating technology and comprises the following steps:
(1) the substrate material is a silicon wafer which grows 300nm silicon dioxide through thermal oxidation, and graphene is moved after the substrate is cleaned.
(2) And (3) performing common photoetching or electron beam photoetching, coating glue on the sample with the graphene transferred on the substrate, and then exposing a required pattern by utilizing photoetching or electron beam photoetching, wherein the pattern size can be in a nanometer scale or a micrometer scale.
(3) The coating technology is not adopted, the hydrogen plasma is directly used for etching, the power is set to be 100W, the flow of 70SCCM is adopted, the air pressure is 400Pa, and the etching time is 20 minutes. The photoresist is then removed with acetone and isopropanol, and it can be seen from fig. 6 that the exposed graphene is still not etched away, but remains as a continuous thin film with non-aligned edges, together with the graphene protected by the photoresist. The test shows that the electrical properties such as mobility and resistivity are obviously not as good as those of the graphene strips with neat edges obtained in examples 1-5.
In summary, according to the technical solutions of embodiments 1 to 5, the present invention utilizes hydrogen plasma etching in combination with a coating technique to grow metal on unprotected graphene, so as to substantially increase the etching rate without affecting the graphene under the protection of the mask, and then utilizes an anisotropic etching mechanism of the hydrogen plasma on the graphene, so that the finally obtained graphene strip has a geometric structure with a zigzag edge. The method does not damage the lattice structure of the graphene strip in the preparation process, can maintain the intrinsic property of the graphene strip to the maximum extent, and reduces scattering caused by edge disorder due to neat edges, so that the graphene strip has high conductivity, carrier mobility and low resistivity. Moreover, the method can be used for preparing the strip with adjustable width and large length-width ratio, is simple in process operation and compatible with the modern semiconductor processing process, is expected to improve the performance of the device based on the graphene strip, and has wide application prospect in the aspects of electronic interconnection, photoelectric devices, sensing devices and low power consumption.
In addition, the inventors also conducted experiments with other raw materials and conditions listed in the present specification, etc., in the manner of example 1 to example 5, and also succeeded in producing edge-aligned graphene ribbons having higher conductivity, carrier mobility, and lower resistivity.
It should be understood that the above preferred embodiments are only for illustrating the present invention, and other embodiments of the present invention are also possible, but those skilled in the art will be able to adopt the technical teaching of the present invention and equivalent alternatives or modifications thereof without departing from the scope of the present invention.
Claims (13)
1. A preparation method of graphene strips with neat edges is characterized by comprising the following steps:
carrying out photoetching patterning on graphene, wherein the size of the photoetching patterned pattern is nano-scale or micron-scale;
depositing a metal film on the patterned graphene by adopting a coating technology, and removing the metal film by using a removing agent, wherein the coating technology is selected from any one or a combination of more than two of electron beam evaporation, thermal evaporation or magnetron sputtering, and the removing agent is selected from a dilute acid solution and/or a dilute alkali solution;
performing hydrogen plasma etching treatment on the patterned graphene for 1-60 min at the temperature of room temperature to 200 ℃, the power of 50-300W, the flow of 10-100 SCCM and the pressure of 10-600 Pa to obtain graphene strips with neat edges; the edge of the graphene strip is in a regular pattern or a special shape, the graphene strip has a geometric structure with a sawtooth-shaped edge being dominant, the graphene strip is periodically and uniformly distributed, the line width is tens of nanometers to tens of micrometers, and the aspect ratio is 1: 1-2000: 1, its resistance is 0.71-4.4 k omega, mobility is 566.05-1361.3 cm2v-1s-1。
2. The method of claim 1, further comprising: before the photolithography patterning, the graphene is transferred to a substrate.
3. The production method according to claim 1 or 2, characterized in that: the graphene is prepared by any one or combination of more than two of a chemical vapor deposition method, a mechanical stripping method, an epitaxial growth method, a graphite oxide reduction method and graphite intercalation dissociation.
4. The method of claim 2, wherein: the substrate is selected from an organic substrate and/or an inorganic substrate.
5. The method of claim 2, wherein: the substrate is selected from a rigid substrate and/or a flexible substrate.
6. The method of claim 2, wherein: the substrate is selected from any one of silicon wafers, gallium nitride, boron nitride, polyester films and polyimide films.
7. The method of claim 2, wherein: the substrate is a silicon dioxide/silicon substrate.
8. The production method according to claim 1 or 2, characterized in that: the lithography patterning includes general lithography patterning and/or electron beam lithography patterning.
9. The method of claim 1, wherein: the thickness of the metal film is 1-500 nm.
10. The method of claim 1, wherein: the material of the metal film is selected from any one or the combination of more than two of zinc, aluminum, iron and magnesium.
11. The method of claim 1, wherein: the hydrogen plasma is generated by means of inductive coupling and/or electrode pressurization.
12. The production method according to claim 1 or 11, characterized by further comprising: and cleaning the graphene obtained after the hydrogen plasma etching treatment by using a cleaning agent, wherein the cleaning agent is selected from acetone and/or isopropanol.
13. Use of edge-aligned graphene ribbons prepared by the method of any one of claims 1 to 12 for the preparation of optoelectronic devices, sensing devices, low power devices or electronic interconnect applications.
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