CN109713139A - A kind of film and the preparation method and application thereof - Google Patents
A kind of film and the preparation method and application thereof Download PDFInfo
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- CN109713139A CN109713139A CN201711007085.6A CN201711007085A CN109713139A CN 109713139 A CN109713139 A CN 109713139A CN 201711007085 A CN201711007085 A CN 201711007085A CN 109713139 A CN109713139 A CN 109713139A
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Abstract
The present invention discloses a kind of film and the preparation method and application thereof, and the film is made of medium and nano-metal particle, and along the film thickness direction, the mass concentration of the medium is from low to high.Along the thickness direction of the film, the mass concentration of medium and nano-metal particle gradually changes the present invention, forms the film with grading structure.Its contact surface that can increase medium and nano-metal particle, to increase thin film strength；Simultaneously can to avoid brought by no grading structure because mechanical stress it is different caused by structural damage.
Description
Technical field
The present invention relates to film applications more particularly to a kind of film and the preparation method and application thereof.
Background technique
Surface plasma enhancement effect (surface plasma enhancement, be abbreviated as SPE) is inorganic nano material
Another fascinating property of material.Such as coin race metal, such as silver, gold, copper, the monomer under nano-scale can be to certain wave
The excitation of long external electromagnetic wave generates resonance, achievees the effect that enhance signal.This can be equally used for electrooptical device.Example
Such as, to luminescence display diode, nano Au particle bring surface enhanced effect can be used for the light of amplification semiconductor material sending,
To improving luminous efficiency, but its effect for enhancing signal of existing inorganic nano material is still to be improved, is applied to photoelectricity
Its luminous efficiency of switching device is still lower.
In addition, surface plasma enhancement effect before, which mainly passes through vacuum method, prepares special construction acquisition, pass through list
Only depositing nano metal layer obtains.These techniques for large area, solution processing method prepare higher cost for opto-electronic device,
Preparation process complexity, poor repeatability, can not volume production etc..
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of film and preparation method thereof with answer
With, it is desirable to provide a kind of film with grading structure achievees the effect that enhance signal.
Technical scheme is as follows:
A kind of film, wherein the film is made of medium and nano-metal particle, described along the thickness direction of the film
The mass concentration of medium is from low to high.
The film, wherein the medium is at least one of organic media and inorganic medium.
The film, wherein the organic media is at least one of PMMA, PE.
The film, wherein the inorganic medium is SiO2、CaSO4, at least one of SiC, SiN.
The film, wherein the nano-metal particle be nanometer Au, nanometer Ag, nanometer Cu, nanometer Fe, Ni nanoparticle,
At least one of Pt nano particle.
The film, wherein the film with a thickness of 5-100nm.
The film, wherein along the thickness direction of the film, the mass concentration of the medium by low concentration linearly gradually
Become or exponential fade is to high concentration.
A kind of preparation method of film, wherein comprising steps of using vacuum method, control the deposition rate of medium from small
Change to big, while the deposition rate for controlling nano-metal particle is small from changing to greatly, forms the mass concentration of medium from low to high
Film.
The preparation method of the film, wherein the vacuum method is vapour deposition method or sputtering method.
A kind of application of film, wherein the film is used to prepare semiconductor devices, the semiconductor devices further includes
Light source.
The utility model has the advantages that the present invention provides a kind of film, along the thickness direction of the film, medium and nano-metal particle
Mass concentration be gradual change, increase the contact surface of medium and nano-metal particle in film in this way, reach enhancing signal
Effect；Simultaneously can to avoid brought by no grading structure because mechanical stress it is different caused by structural damage.
Detailed description of the invention
Fig. 1 is the luminescent spectrum figure of device in the embodiment of the present invention 1.
Fig. 2 is the luminescent spectrum figure of device in the embodiment of the present invention 2.
Specific embodiment
The present invention provides a kind of film and the preparation method and application thereof, to make the purpose of the present invention, technical solution and effect
Clearer, clear, the present invention is described in more detail below.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
The present invention provides a kind of film, wherein the film is made of medium and nano-metal particle, along the film
Thickness direction, the mass concentration of the medium is from low to high.
The present invention introduces nano-metal particle in the medium, this is because receiving under the excitation of the electromagnetic wave of specific wavelength
Rice metallic particles generates resonance, can achieve the effect of enhancing signal.
Further, the film provided by the invention, specifically: along the thickness direction of the film, the medium
Mass concentration is gradient to 100% by 0%, and the mass concentration of the nano-metal particle is gradient to 0% by 100%, mass concentration variation
Including any value in 0% ~ 100%.
The present invention uses vacuum method, by simultaneously to the evaporation rate of medium and nano-metal particle or sputter rate into
Row control, in the film with certain thickness concentration gradient that grown on substrates is made of medium and nano-metal particle.It is excellent
Selection of land, the film with a thickness of 5-100nm.
Along the thickness direction of the film, the mass concentration of medium and nano-metal particle gradually changes the present invention, shape
At the film with grading structure.It is of the present invention that there is gradual change compared with the existing conventional film without grading structure
The film of structure can increase the contact surface of medium and nano-metal particle, the light that film emits by absorbing light source, Lai Zengqiang
The illumination effect of light source.This is because the free electron of metal nanoparticle surface and the photon of light source transmitting interact, produce
The raw surface plasma propagated along metal nanoparticle surface, it can generate electric field, generate altogether with the electromagnetic wave of light source transmitting
Vibration, to achieve the effect that enhance light source luminescent.Simultaneously can to avoid brought by no grading structure because of mechanical stress difference institute
Caused structural damage.In addition, the intensity of the film enhancing light source luminescent is related with the concentration of electronics, pass through gradual changed method
Electron concentration can be improved in local, to improve the effect of enhancing light source luminescent.
Further, the medium is at least one of organic media and inorganic medium.For example, the organic media is
At least one of polymethyl methacrylate (PMMA), polyethylene (PE).The inorganic medium is SiO2、CaSO4、SiC、SiN
At least one of.
Further, the nano-metal particle is nanometer Au, nanometer Ag, nanometer Cu, nanometer Fe, Ni nanoparticle, Pt nano particle
At least one of.
Concentration gradient of the present invention can be concentration linear gradient or non-linear gradual change, and nonlinear concentration gradual change can be concentration
Exponential fade or concentration gradient gradual change.
Specifically, along the thickness direction of the film, the mass concentration of the medium is described by 0% linear gradient to 100%
The mass concentration of nano-metal particle is by 100% linear gradient to 0%.
Specifically, along the thickness direction of the film, the mass concentration of the medium is described by 0% exponential fade to 100%
The mass concentration of nano-metal particle is by 100% exponential fade to 0%.
Specifically, along the thickness direction of the film, the mass concentration of the medium is described by 0% gradient to 100%
The mass concentration of nano-metal particle is by 100% gradient to 0%.
The present invention also provides a kind of preparation methods of film, wherein comprising steps of controlling medium using vacuum method
Deposition rate changes to greatly from small, while the deposition rate for controlling nano-metal particle is small from changing to greatly, and the quality for forming medium is dense
The film of degree from low to high.
Specifically, using vacuum method, the peak that the deposition rate of medium is gradient to setting from 0 is controlled, is controlled simultaneously
The deposition rate of nano-metal particle is gradient to 0 from the peak of setting, and growth is by medium and nano-metal particle in substrate
The film with grading structure constituted.
Nano-metal particle can be a kind of nano-metal particle or a variety of nano-metal particles in the present invention, when being more
When kind nano-metal particle, nano-metal particle can be mixed, the deposition rate of control mixing nano-metal particle,
It can be controlled separately the deposition rate of different nano-metal particles.
Further, the gradual change of the deposition rate can be linear gradient or non-linear gradual change, and non-linear gradual change can be with
It is exponential fade or gradient.
Further, the vacuum method can be conventional vapour deposition method or sputtering method.Preparation method of the present invention passes through same
When the evaporation rate or sputter rate of medium and nano-metal particle are accurately controlled, formed a controllable concentration gradient
Film.Medium and the parameters such as nano-metal particle concentration and distribution, film thickness are controllable and reproducible in film.
The application that the present invention also provides a kind of such as film, wherein the film is used to prepare semiconductor devices, described half
Conductor device further includes light source.The light source can be lighting source, be also possible to the hair of other electroluminescent or luminescence generated by light
Light unit, such as quantum dot light emitting unit, organic light-emitting units.
Film of the present invention is 5-50nm at a distance from light source.The reinforcing effect of film and the publication of film and light source
Distance dependent can balance the relationship for being quenched and enhancing by controlling the actual range of the film and light source.In the film
Since the concentration of nano-metal particle is gradual change, low concentration region will not be quenched.And pass through the tune of nano-metal particle concentration
It is whole, it can control the actual range of the film with grading structure and luminescent layer.
Below by embodiment, the present invention is described in detail.
Embodiment 1
A kind of film provided in this embodiment: the film is by SiO2With nano metal Ag constitute, the film with a thickness of
10nm, the film are the grading structure that graded concentration is formed: specifically along the thickness direction of the SPE film, the SiO2's
Mass concentration is from 0% exponential fade to 100%, and the mass concentration of the nano metal Ag is from 100% exponential fade to 0%.
Above-mentioned film the preparation method comprises the following steps: using evaporation coating method, during entire vapor deposition, control the evaporation rate of Ag
It is reduced to 0nm/s from 0.4nm/s, while controlling SiO2Evaporation rate increase to 0.24nm/s from 0.Each section of concentration is thus
When evaporation rate determine.
A kind of semiconductor devices, including light source and above-mentioned film, light source setting is at film 50nm, from light source to remote
From in light source direction, SiO2Mass concentration becomes 0% from 100%, and the luminescent spectrum figure of corresponding semiconductor devices is shown in Fig. 1, from Fig. 1
Know that semiconductor devices described in the present embodiment has a sharp glow peak.
Embodiment 2
A kind of film provided in this embodiment: the film is made of SiC and nano metal Cu, the film with a thickness of
80nm, the film are the grading structure that graded concentration is formed: specifically along the thickness direction of the film, the quality of the SiC
Concentration is from 100% linear gradient to 0%, and the mass concentration of the Cu is from 0% linear gradient to 100%.
Above-mentioned film the preparation method comprises the following steps: using multi-source sputtering method, during entire sputtering, control the sputtering of SiC
Rate is reduced to 0nm/s from 0.5nm/s, while the sputter rate for controlling Cu increases to 0.1nm/s from 0.Each section of concentration by
Sputter rate at this time determines.
A kind of semiconductor devices, including light source and above-mentioned film, light source setting is at film 5nm, from light source to remote
From in light source direction, SiC mass concentration becomes 0% from 100%, and the luminescent spectrum figure of corresponding semiconductor devices is shown in Fig. 2, from Fig. 2
Know that semiconductor devices described in the present embodiment has a sharp glow peak.
In conclusion a kind of film and the preparation method and application thereof of the invention.The present invention is along the thickness side of the film
To the mass concentration of medium and nano-metal particle gradually changes, and forms the film with grading structure.With it is existing conventional
Film without grading structure is compared, and the film of grading structure of the present invention can increase connecing for medium and nano-metal particle
Contacting surface, to increase thin film strength；Simultaneously can to avoid brought by no grading structure because mechanical stress it is different caused by
Structural damage.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (10)
1. a kind of film, which is characterized in that the film is made of medium and nano-metal particle, along the thickness side of the film
To the mass concentration of the medium is from low to high.
2. film according to claim 1, which is characterized in that the medium be in organic media and inorganic medium at least
It is a kind of.
3. film according to claim 2, which is characterized in that the organic media is at least one of PMMA, PE.
4. film according to claim 2, which is characterized in that the inorganic medium is SiO2、CaSO4, in SiC, SiN
It is at least one.
5. film according to claim 1, which is characterized in that the nano-metal particle is nanometer Au, nanometer Ag, nanometer
At least one of Cu, nanometer Fe, Ni nanoparticle, Pt nano particle.
6. film according to claim 1, which is characterized in that the film with a thickness of 5-100nm.
7. film according to claim 1, which is characterized in that along the thickness direction of the film, the quality of the medium
Concentration is by low concentration linear gradient or exponential fade to high concentration.
8. a kind of preparation method of film, which is characterized in that comprising steps of controlling the deposition rate of medium using vacuum method
Change to big from small, while the deposition rate for controlling nano-metal particle is small from changing to greatly, formed the mass concentration of medium by as low as
High film.
9. the preparation method of film according to claim 8, which is characterized in that the vacuum method is vapour deposition method or sputtering
Method.
10. a kind of application of film as claimed in claim 1, which is characterized in that the film is used to prepare half
Conductor device, the semiconductor devices further include light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711007085.6A CN109713139A (en) | 2017-10-25 | 2017-10-25 | A kind of film and the preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711007085.6A CN109713139A (en) | 2017-10-25 | 2017-10-25 | A kind of film and the preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
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| CN109713139A true CN109713139A (en) | 2019-05-03 |
Family
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| CN201711007085.6A Pending CN109713139A (en) | 2017-10-25 | 2017-10-25 | A kind of film and the preparation method and application thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103766A (en) * | 2014-06-27 | 2014-10-15 | 京东方科技集团股份有限公司 | Organic light-emitting diode, array substrate and fabrication method thereof and display device |
| CN104465995A (en) * | 2013-09-12 | 2015-03-25 | 海洋王照明科技股份有限公司 | Organic light-emitting diode device and preparation method thereof |
| CN105304828A (en) * | 2015-11-02 | 2016-02-03 | 固安翌光科技有限公司 | Tandem white organic luminescent device |
| CN106450013A (en) * | 2016-10-11 | 2017-02-22 | Tcl集团股份有限公司 | Qled device |
| CN106848104A (en) * | 2017-04-14 | 2017-06-13 | 京东方科技集团股份有限公司 | Top emission type luminescent device |
-
2017
- 2017-10-25 CN CN201711007085.6A patent/CN109713139A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465995A (en) * | 2013-09-12 | 2015-03-25 | 海洋王照明科技股份有限公司 | Organic light-emitting diode device and preparation method thereof |
| CN104103766A (en) * | 2014-06-27 | 2014-10-15 | 京东方科技集团股份有限公司 | Organic light-emitting diode, array substrate and fabrication method thereof and display device |
| CN105304828A (en) * | 2015-11-02 | 2016-02-03 | 固安翌光科技有限公司 | Tandem white organic luminescent device |
| CN106450013A (en) * | 2016-10-11 | 2017-02-22 | Tcl集团股份有限公司 | Qled device |
| CN106848104A (en) * | 2017-04-14 | 2017-06-13 | 京东方科技集团股份有限公司 | Top emission type luminescent device |
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Application publication date: 20190503 |
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