CN109713095A - A kind of GaN light emitting diode and preparation method thereof and LED chip - Google Patents
A kind of GaN light emitting diode and preparation method thereof and LED chip Download PDFInfo
- Publication number
- CN109713095A CN109713095A CN201811519132.XA CN201811519132A CN109713095A CN 109713095 A CN109713095 A CN 109713095A CN 201811519132 A CN201811519132 A CN 201811519132A CN 109713095 A CN109713095 A CN 109713095A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- gan
- alloy
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
The present invention provides a kind of GaN light emitting diode and preparation method thereof and LED chip, GaN light emitting diode includes: the N-type GaN layer being cascading on substrate, luminescent layer, p-type GaN layer and transparency conducting layer, wherein, the transparency conducting layer is equipped with P-type electrode layer, the N-type GaN layer is equipped with the N-type electrode layer separated with the luminescent layer, and the P-type electrode layer and the N-type electrode layer are all made of Al/Si alloy and are made, GaN light emitting diode provided by the invention solves when electrode layer is made of AI metal in existing GaN light emitting diode since the ductility of metal Al is poor, excessive high hardness and Al element it is oxidizable and cause encapsulation wire bonding process in electrode wires be easy to fall off and bonding wire loosely the problem of.
Description
Technical field
The present invention relates to the fields light emitting diode (Light-Emitting Diode, abbreviation LED), more particularly to one kind
GaN light emitting diode and preparation method thereof and LED chip.
Background technique
LED is the active device that Current electronic information industry is most widely used, and high-brightness LED is converted in energy
A small amount of heat is only discharged in journey, has many advantages, such as that efficient, energy-saving and environmental protection and service life are long, shines it in Dynamically Announce, semiconductor
There is preferable application prospect in bright field, wherein in terms of LED material, III-V group semi-conductor material is in luminous lighting, solar cell
And the fields such as high power device have obtained application widely, are especially the wide bandgap semiconductor material of representative with gallium nitride (GaN)
Material, is the third generation semiconductor material after silicon (Si) and GaAs (GaAs), receives the extensive of scientific research circle and industrial circle
Concern, while GaN is the manufacture most important material of blue green light LED, starts comprehensively to carry out in industrial circle.
Currently, in the production of GaN light emitting diode, as shown in Figure 1, in order to induce current into extension luminescent layer, generally
One layer of ITO (tin indium oxide) layer 40 is deposited in the p-type GaN layer 30 of LED and is used as current extending, while in order to avoid electrode
The adverse effects such as big, the breakdown chip of electric current congestion, calorific value caused by line lower current is excessive, generally grow one in ito film
Layer P type electrode layer 50 corresponding with electrode wires further expands electric current, and purpose prevents above-mentioned drawback, correspondingly,
The N-type GaN layer 10 of LED is equipped with N-type electrode layer 60, and N-type electrode layer 60 and luminescent layer 20 are spaced.Wherein, P-type electrode layer 50
When being often made of the Au element with satisfactory electrical conductivity with N-type electrode layer 60, but using Au element electrode, the system of chip
It is very high to make cost, in order to reduce cost of manufacture, and can achieve the purpose that effectively to extend electric current, by P-type electrode layer 50 and N-type electricity
Pole layer 60 uses Al metal, makes electrode layer with Al metal.
However, find in specific application again, the ductility of metal Al is poor, excessive high hardness, and the easy oxygen of Al element
Change, during being packaged bonding wire, electrode wires are easy to fall off, bonding wire loosely problem.
Summary of the invention
The present invention provides a kind of GaN light emitting diode and preparation method thereof and LED chip, solves existing GaN and shines two
Since the ductility of metal Al is poor, excessive high hardness and Al element are oxidizable and make when electrode layer is made of AI metal in pole pipe
At encapsulation wire bonding process in electrode wires be easy to fall off and bonding wire loosely the problem of.
In a first aspect, the present invention provides a kind of GaN light emitting diode, comprising: the N-type being cascading on substrate
GaN layer, luminescent layer, p-type GaN layer and transparency conducting layer, in which:
The transparency conducting layer is equipped with P-type electrode layer, and the N-type GaN layer is equipped with the N-type separated with the luminescent layer
Electrode layer, and the P-type electrode layer and the N-type electrode layer are all made of Al/Si alloy and are made.
In specific embodiments of the present invention mode, specifically, the molar content of Si is x in the Al/Si alloy, Al's rubs
Your content is 1-x, wherein 0.01 < x < 0.1.
In specific embodiments of the present invention mode, specifically, the thickness of the P-type electrode layer and the N-type electrode layer is situated between
In 200-3000nm.
In specific embodiments of the present invention mode, specifically, the transparency conducting layer is ITO layer, the luminescent layer is
The luminescent layer of InGaN/GaN multiple quantum wells.
The present invention also provides a kind of preparation methods of GaN light emitting diode, which comprises
N-type GaN layer is formed on the substrate；
Luminescent layer is formed in the N-type GaN layer；
P-type GaN layer is formed on the light-emitting layer；
Transparency conducting layer is formed in the p-type GaN layer；
Al/Si alloy-layer is set on the transparency conducting layer and the N-type GaN layer, to form P-type electrode layer and N-type
Electrode layer, wherein the P-type electrode layer is located on the transparency conducting layer, and the N-type electrode layer is located at the N-type GaN layer
Above and with the luminescent layer separate.
In specific embodiments of the present invention mode, specifically, described on the transparency conducting layer and the N type GaN layer
Al/Si alloy-layer is set to form P-type electrode layer and N-type electrode layer, comprising:
The source Al and the source Si are sputtered on the transparency conducting layer and the N-type GaN layer, form the Al/Si alloy-layer；
Photoresist is set on the Al/Si alloy-layer, and by exposure, development and clean the N type GaN layer and
Al/Si alloy-layer removal between the p-type GaN layer, to form the P-type electrode layer spaced apart from each other and the N-type
Electrode layer.
In specific embodiments of the present invention mode, specifically, described on the transparency conducting layer and the N type GaN layer
Before the sputtering source Al and the source Si, comprising:
The vacuum for controlling reaction chamber is 3 × 10-8-3.5×10-8Support and temperature are 150-300 DEG C；
It is described that the source Al and the source Si are sputtered on the transparency conducting layer and the N-type GaN layer, comprising:
When the vacuum of the reaction chamber is more than 3 × 10-8Support when temperature is more than 150 DEG C, starts the electron beam transpiration Al in the source Al
Source and the source electron beam transpiration Si for starting the source Si, form Al/Si alloy on the transparency conducting layer and the N-type GaN layer
Layer.
In specific embodiments of the present invention mode, specifically,
The thickness of the Al/Si alloy-layer is between 200-3000nm.
In specific embodiments of the present invention mode, specifically, the molar content of Si is x in the Al/Si alloy-layer, Al's
Molar content is 1-x, wherein 0.01 < x < 0.1.
The present invention further provides a kind of LED chips, comprising: including at least one GaN light-emitting diodes described above
Pipe.
GaN light emitting diode provided by the invention, by including be cascading N-type GaN layer on substrate, hair
Photosphere, p-type GaN layer and transparency conducting layer, the transparency conducting layer be equipped with P-type electrode layer, the N-type GaN layer be equipped with
The N-type electrode layer that the luminescent layer separates, and the P-type electrode layer and the N-type electrode layer are all made of Al/Si alloy and are made,
When forming Al/Si alloy due to adulterating Si material in Al metal, the hardness of Al/Si alloy is less than the hardness of Al, while Al/Si
The electric conductivity of alloy is better than the electric conductivity of Al, uses Al metal phase ratio, Al in the present embodiment with electrode layer in the prior art
In metal adulterate Si when reduce Al metal hardness and promoted Al metal electric conductivity, and Al/Si alloy ductility compared with
It well and is not easy to be oxidized, the yield of bonding wire can be promoted in encapsulation wire bonding process in this way, so that electrode wires are not easily to fall off, bonding wire connects
It is more firm to connect, and the promotion of Al/Si alloy conductive can improve effective extension of electric current, therefore, provided in this embodiment
GaN light emitting diode realizes the purpose that electrode wires are not easily to fall off and bonding wire connection is more firm, and improves the effective of electric current
Extension solves when electrode layer is made of AI metal in existing GaN light emitting diode since the ductility of metal Al is poor, hard
Spend high and Al element it is oxidizable and cause in encapsulation wire bonding process electrode wires be easy to fall off and bonding wire loosely the problem of.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of GaN light emitting diode in the prior art；
Fig. 2 is the structural schematic diagram for the GaN light emitting diode that the embodiment of the present invention one provides；
Fig. 3 is the flow diagram of the preparation method of GaN light emitting diode provided by Embodiment 2 of the present invention.
Description of symbols:
10-N type GaN layer；
20- luminescent layer；
30-P type GaN layer；
40- transparency conducting layer；
50-P type electrode layer；
60-N type electrode layer.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
As described in background, the P-type electrode layer of existing GaN light emitting diode and N-type electrode layer are being packaged
There are problems that during bonding wire electrode wires be easy to fall off, bonding wire loosely, the reason of generating the question-and-answer problem, is: existing P
Type electrode layer and N-type electrode layer use Al metal, and the ductility of metal Al is poor, excessive high hardness, and Al element is oxidizable,
Make in this way encapsulate bonding wire during there are problems that electrode wires be easy to fall off, bonding wire loosely.
For these reasons, the present invention provides a kind of GaN light emitting diode, and example is as follows:
Embodiment one
Fig. 2 is the structural schematic diagram for the GaN light emitting diode that the embodiment of the present invention one provides.
GaN light emitting diode provided in this embodiment, shown in Figure 2, GaN light emitting diode includes: to stack gradually to set
N-type GaN layer 10, luminescent layer 20, p-type GaN layer 30 and transparency conducting layer 40 on substrate is set, i.e., in the present embodiment, in substrate
Luminescent layer 20 is arranged in upper setting N-type GaN layer 10 on N-type GaN layer 10, due to needing setting N-type electrode layer in N-type GaN layer 10,
So the area of N-type GaN layer 10 is greater than the area of luminescent layer 20, and such N-type GaN layer 10 is not by luminescent layer 20 in the present embodiment
N-type electrode layer can be set in the region of covering, and p-type GaN layer 30 is arranged on luminescent layer 20, is arranged in p-type GaN layer 30 transparent
P-type electrode layer 50 is arranged in conductive layer 40 on transparency conducting layer 40, and the N separated with luminescent layer 20 is equipped in N-type GaN layer 10
Type electrode layer 60, and in the present embodiment, P-type electrode layer 50 and N-type electrode layer 60 are all made of Al/Si alloy and are made, i.e. this implementation
In example, P-type electrode layer 50 and N-type electrode layer 60 are made using the Al/Si alloy (i.e. alusil alloy) that doping Si is formed in Al metal
At compared with P-type electrode layer 50 in the prior art and N-type electrode layer 60 are made of Al metal, in the present embodiment, due in Al
Si material is adulterated in metal forms Al/Si alloy, and the hardness of Al/Si alloy is less than the hardness of Al, while Al/Si alloy is led
Electrical property is better than the electric conductivity of Al, so, the hardness of Al metal is reduced when using Al/Si alloy in this way and promotes Al gold
The electric conductivity of category, and Al/Si alloy ductility is preferable and is not easy to be oxidized, and can promote bonding wire in encapsulation wire bonding process in this way
Yield so that electrode wires are not easily to fall off, bonding wire connection is more firm, and the promotion of Al/Si alloy conductive can improve electricity
Effective extension of stream, therefore, the GaN light emitting diode of the present embodiment realize that electrode wires are not easily to fall off and bonding wire connection more
Firm purpose, and improve effective extension of electric current, it solves electrode layer in existing GaN light emitting diode and uses AI made of metal
When making due to the ductility of metal Al is poor, excessive high hardness and Al element it is oxidizable and cause encapsulation wire bonding process in electrode wires hold
Easy to fall off and bonding wire loosely the problem of, meanwhile, in the present embodiment, when using Al/Si alloy, with electrode layer in the prior art
It is compared using Au or Al, greatly reduces cost, so reducing the cost of manufacture of GaN light emitting diode in the present embodiment.
Wherein, in the present embodiment, substrate can for sapphire, graphic sapphire, silicon, silicon carbide, zinc oxide, glass and
Any one in the typical substrate materials such as copper.
Wherein, in the present embodiment, luminescent layer 20 is specially the luminescent layer 20 of InGaN/GaN multiple quantum wells (MQW) composition, this
In embodiment, the structure of luminescent layer 20 specifically can be with reference to the structure of luminescent layer 20 in existing GaN light emitting diode, the present embodiment
In, the number of plies of multiple quantum wells can specifically be selected with practical application, in the present embodiment without limitation.
Wherein, in the present embodiment, transparency conducting layer 40 is specially ITO (tin indium oxide) layer, by p-type GaN layer 30
When ITO layer is deposited, ITO layer can be used as current extending, induce current into extension luminescent layer 20, in the present embodiment, thoroughly
The thickness of bright conductive layer 40 can specifically be set with practical application.
GaN light emitting diode provided in this embodiment, by including the N type GaN layer being cascading on substrate
10, luminescent layer 20, p-type GaN layer 30 and transparency conducting layer 40, transparency conducting layer 40 are equipped with P-type electrode layer 50, N-type GaN layer
10 are equipped with the N-type electrode layer 60 separated with luminescent layer 20, and P-type electrode layer 50 and N-type electrode layer 60 are all made of Al/Si alloy
It is made, when forming Al/Si alloy due to adulterating Si material in Al metal, the hardness of Al/Si alloy is less than the hardness of Al, simultaneously
The electric conductivity of Al/Si alloy is better than the electric conductivity of Al, uses Al metal phase ratio, this implementation with electrode layer in the prior art
The hardness of Al metal is reduced when adulterating Si in example in Al metal and promotes the electric conductivity of Al metal, and Al/Si alloy prolongs
Malleability is preferable and is not easy to be oxidized, and can promote the yield of bonding wire in encapsulation wire bonding process in this way, so that electrode wires are not easily to fall off,
Bonding wire connection is more firm, and the promotion of Al/Si alloy conductive can improve effective extension of electric current, therefore, the present embodiment
The GaN light emitting diode of offer realizes the purpose that electrode wires are not easily to fall off and bonding wire connection is more firm, and improves electric current
Effective extension, solve electrode layer in existing GaN light emitting diode using the ductility when production of AI metal due to metal Al
Poor, excessive high hardness and Al element is oxidizable and electrode wires is caused in encapsulation wire bonding process to be easy to fall off and bonding wire asking loosely
Topic.
Wherein, in the present embodiment, when P-type electrode layer 50 and N-type electrode layer 60 are all made of Al/Si alloy and are made, Al/Si is closed
The molar content of Si is x in gold, and the molar content of Al is 1-x, wherein 0.01 < x < 0.1, i.e., in embodiment, in Al metal
It adulterates Si material and forms Al1-xSIxWhen alloy, the molar content of Si is 0.01-0.1, and Al metal rubs in such Al/Si alloy
Your content is 0.9-0.99, such as in the present embodiment, the molar content of Si can be 0.08 in Al/Si alloy, at this point, Al/Si
The molar content of Al metal is 0.92 in alloy, that is, forms Al0.92Si0.08Alloy, in the present embodiment, the molar content of Si has
The molar percentage of Si in body unit mole Al/Si.
Wherein, in the present embodiment, the thickness of P-type electrode layer 50 and N-type electrode layer 60 is between 200-3000nm, i.e. this reality
Apply in example, P-type electrode layer 50 with a thickness of 200-3000nm, the thickness of N-type electrode layer 60 is also 200-3000nm, in this way use
When Al/Si alloy forms P-type electrode layer 50 and N-type electrode layer 60, the overall thickness of Al/Si alloy is 200-3000nm, for example,
In the present embodiment, P-type electrode layer 50 with a thickness of 2500nm, the thickness of N-type electrode layer 60 can be 2000nm.
Embodiment two
Fig. 3 is the flow diagram of the preparation method of GaN light emitting diode provided by Embodiment 2 of the present invention.
When prepared by GaN light emitting diode provided in this embodiment, the growing method tool of each structure sheaf of GaN light emitting diode
Body can be grown using MBE (molecular beam epitaxy) or electron beam evaporation technique, plated film be carried out in ultravacuum system, in plated film
Make to adulterate in Al film to form Al into Si element appropriate by controlling the amount of Si in the process1-xSIxAlloy.Specifically, this
The consersion unit selected in embodiment is, for example, such as MOCVD device, MBE equipment and HVPE equipment, and wherein MOCVD device is
Metallo-organic compound is carried out to gas phase on substrate in the way of pyrolysis by Metallo-Organic Chemical Vapor deposition technique
Equipment of the deposition to prepare LED, MBE equipment are the equipment for preparing LED using molecular beam epitaxy technique, and HVPE equipment is benefit
The equipment for preparing LED with hydride gas-phase epitaxy technology can be according to the actual situation and it needs to be determined that phase in specific implementation process
The equipment answered.
Specific to select MBE equipment in the present embodiment, the substrate of selection is silicon substrate, as shown in figure 3, specific preparation side
Method includes the following steps:
S101: N-type GaN layer is formed on the substrate；
Wherein, in the present embodiment, when N-type GaN layer 10 is formed on the substrate, specifically, can control temperature 800~1100
DEG C, pressure 200-600mbar is passed through gallium source compound and NH3, the N-type with a thickness of 500~2000nm is formed on the substrate
GaN layer, wherein gallium source compound can be triethyl-gallium or trimethyl gallium.
S102: luminescent layer is formed in N-type GaN layer；
Wherein, in the present embodiment, when forming luminescent layer 20 in N-type GaN layer 10, specifically, raw in N-type GaN layer 10
Long quantum well structure forms luminescent layer 20, may include: the pressure 200- firstly, controlled at 800~900 DEG C
600mbar is passed through gallium source compound and ammonia, and GaN quantum barrier layer is grown on N-GaN layer.GaN amount is grown on N-GaN layer
When sub- barrier layer, N type impurity can be mixed and form N-GaN quantum barrier layer, N-type impurity can not also be mixed, formed undoped
GaN quantum barrier layer, the thickness of quantum barrier layer are specifically as follows 5-25nm, and quantum barrier layer is not limited to only GaN amount in the present invention
Sub- barrier layer can also be AlGaN quantum barrier layer or InGaN quantum barrier layer；Then: controlled at 700~800 DEG C, pressure is
200-600mbar is passed through gallium source compound, indium source compound and ammonia, and wherein indium source compound can be triethylindium, front three
Base indium, growing gallium nitride indium (InGaN) quantum well layer on GaN quantum barrier layer, InGaN quantum well layer are undoped InGaN
Quantum well layer, wherein in the present invention, the thickness of quantum well layer is specifically as follows 1-5nm, quantum barrier layer and quantum well layer composition
One quantum well structure with a thickness of 6-30nm, in the present invention, the quantity of quantum well structure can be 1-50, pass through above-mentioned step
It is rapid to obtain 1 quantum well structure, when the quantity of quantum well structure is 2, then it is repeated once above-mentioned steps and the 2nd amount is made
Sub- well structure, i.e., one quantum well structure of regrowth on the quantum well layer of generation, if multiple quantum well structures, then according to amount
The quantity of sub- trap repeats step 1 and step 2, when quantum well structure is at least two, forms shining for GaN/InGaN multiple quantum wells
Layer 20.
S103: p-type GaN layer is formed on the light-emitting layer；
Wherein, in the present embodiment, when forming p-type GaN layer 30 on luminescent layer 20, specifically, temperature control is 900-
1100 DEG C, pressure 200-600mbar is passed through gallium source compound, p type impurity and ammonia, and a thickness is grown on luminescent layer 20
Degree is the P-GaN layer of 10-200nm.
S104: transparency conducting layer is formed in p-type GaN layer；
Wherein, in the present embodiment, transparency conducting layer 40 is formed in p-type GaN layer 30, transparency conducting layer 40 is specially ITO
Manufactured film layer.
S105: Al/Si alloy-layer is set on transparency conducting layer and N-type GaN layer, to form P-type electrode layer and N-type electrode
Layer.
In the present embodiment, P-type electrode layer 50 is located on transparency conducting layer 40, and N-type electrode layer 60 is located in N-type GaN layer 10
And separated with luminescent layer 20, wherein in the present embodiment, Al/Si alloy-layer is set on transparency conducting layer 40 and N-type GaN layer 10
When, specifically, including the following steps:
Step a): vacuumizing deposition system, and chamber vacuum degree is 3 × 10-8-3.5×10-8Support and temperature are
150-300℃；
Step b): after the temperature and pressure of system reaches setting value, start the sputtering electrode in the source Al, while controlling Al
The power of source sputtering, starts the sputtering in the source Si while sputtering the source Al, and Al electrode is controlled by the power of Si source electrode
The molar content of Si in layer, sputters the source Al and the source Si on transparency conducting layer 40 and N type GaN layer 10, forms Al1-xSIxAlloy,
0.01<x<0.1。
Step c): work as Al1-xSIxWhen the thickness of alloy-layer reaches 200-3000nm, system is closed, and cooled down, will plated
Good AL1-xSIxThe epitaxial wafer of alloy takes out, and is arranged photoresist on Al/Si alloy-layer, and by exposure, development, etching and
Cleaning removes the Al/Si alloy-layer between N-type GaN layer 10 and p-type GaN layer 30, to form P-type electrode layer 50 spaced apart from each other
With N-type electrode layer 60, wherein can be with H when etching2SO4Epitaxial wafer is corroded, by extra Al1-xSIxAlloy electrode layers stripping
From falling.
Embodiment three
When prepared by GaN light emitting diode provided in this embodiment, using electron beam transpiration technology, rubbing for Si doping is made
The Al that your content is 0.0250.975Si0.025Alloy electrode, the thickness of P-type electrode layer 50 and the thickness of N-type electrode layer 60 are
2500nm, specifically, step 105 includes the following steps:
Step a1): deposition system is vacuumized, chamber vacuum is 3.5 × 10-8Temperature in support and control reacting furnace
Degree is 300 DEG C；
Step b1): when the temperature and pressure of system reaches setting value, start the sputtering electrode in the source Al, while controlling Al
The power of source sputtering, starts the sputtering in the source Si while sputtering the source Al, and Al electrode is controlled by the power of Si source electrode
The molar content of Si in layer, sputters the source Al and the source Si on transparency conducting layer 40 and N-type GaN layer 10, forms Al0.975Si0.025
Alloy.
Step c1): work as Al0.975Si0.025When the thickness of alloy-layer reaches 2500nm, system is closed, and cooled down, it will
The Al plated0.975Si0.025The epitaxial wafer of alloy takes out, and photoresist is arranged on Al/Si alloy-layer, and by exposing, developing,
It etches and cleans the Al between N-type GaN layer 10 and p-type GaN layer 300.975Si0.025Alloy-layer removal, is spaced from each other with being formed
P-type electrode layer 50 and N-type electrode layer 60, wherein can be with H when etching2SO4Epitaxial wafer is corroded, it will be extra
Al0.975Si0.025Alloy electrode layers peel off.
Example IV
When prepared by GaN light emitting diode provided in this embodiment, using electron beam transpiration technology, rubbing for Si doping is made
The Al that your content is 0.0350.965Si0.035Alloy electrode, the thickness of P-type electrode layer 50 and the thickness of N-type electrode layer 60 are
2500nm, specifically, step 105 includes the following steps:
Step a2): deposition system is vacuumized, chamber vacuum is 3.1 × 10-8Temperature in support and control reacting furnace
Degree is 280 DEG C；
Step b2): when the temperature and pressure of system reaches setting value, start the sputtering electrode in the source Al, while controlling Al
The power of source sputtering, starts the sputtering in the source Si while sputtering the source Al, and Al electrode is controlled by the power of Si source electrode
The molar content of Si in layer, sputters the source Al and the source Si on transparency conducting layer 40 and N-type GaN layer 10, forms Al0.965Si0.035It closes
Gold.
Step c2): work as Al0.965Si0.035When the thickness of alloy-layer reaches 2500nm, system is closed, and cooled down, it will
The Al plated0.965Si0.035The epitaxial wafer of alloy takes out, and photoresist is arranged on Al/Si alloy-layer, and by exposing, developing,
It etches and cleans the Al between N-type GaN layer 10 and p-type GaN layer 300.965Si0.035Alloy-layer removal, is spaced from each other with being formed
P-type electrode layer 50 and N-type electrode layer 60, wherein can be with H when etching2SO4Epitaxial wafer is corroded, it will be extra
Al0.965Si0.035Alloy electrode layers peel off.
Embodiment five
When prepared by GaN light emitting diode provided in this embodiment, using electron beam transpiration technology, rubbing for Si doping is made
The Al that your content is 0.050.95Si0.05Alloy electrode, the thickness of P-type electrode layer 50 and the thickness of N type electrode layer 60 are
2500nm, specifically, step 105 includes the following steps:
Step a3): deposition system is vacuumized, chamber vacuum is 3.0 × 10-8Temperature in support and control reacting furnace
Degree is 270 DEG C；
Step b3): when the temperature and pressure of system reaches setting value, start the sputtering electrode in the source Al, while controlling Al
The power of source sputtering, starts the sputtering in the source Si while sputtering the source Al, and Al electrode is controlled by the power of Si source electrode
The molar content of Si in layer, sputters the source Al and the source Si on transparency conducting layer 40 and N-type GaN layer 10, forms Al0.95Si0.05It closes
Gold.
Step c3): work as Al0.95Si0.05When the thickness of alloy-layer reaches 2500nm, system is closed, and cooled down, will plated
Good Al0.95Si0.05The epitaxial wafer of alloy takes out, and photoresist is arranged on Al/Si alloy-layer, and pass through exposure, development, etching
And it cleans the Al between N-type GaN layer 10 and p-type GaN layer 300.95Si0.05Alloy-layer removal, to form p-type electricity spaced apart from each other
Pole layer 50 and N-type electrode layer 60, wherein can be with H when etching2SO4Epitaxial wafer is corroded, by extra Al0.95Si0.05It closes
Gold electrode layer peels off.
Embodiment six
When prepared by GaN light emitting diode provided in this embodiment, using electron beam transpiration technology, rubbing for Si doping is made
The Al that your content is 0.080.92Si0.08Alloy electrode, the thickness of P-type electrode layer 50 and the thickness of N type electrode layer 60 are
2500nm, specifically, step 105 includes the following steps:
Step a4): deposition system is vacuumized, chamber vacuum is 3.5 × 10-8Temperature in support and control reacting furnace
Degree is 240 DEG C；
Step b4): when the temperature and pressure of system reaches setting value, start the sputtering electrode in the source Al, while controlling Al
The power of source sputtering, starts the sputtering in the source Si while sputtering the source Al, and Al electrode is controlled by the power of Si source electrode
The molar content of Si in layer, sputters the source Al and the source Si on transparency conducting layer 40 and N-type GaN layer 10, forms Al0.92Si0.08It closes
Gold.
Step c4): work as Al0.92Si0.08When the thickness of alloy-layer reaches 2500nm, system is closed, and cooled down, will plated
Good Al0.92Si0.08The epitaxial wafer of alloy takes out, and photoresist is arranged on Al/Si alloy-layer, and pass through exposure, development, etching
And it cleans the Al between N-type GaN layer 10 and p-type GaN layer 300.92Si0.08Alloy-layer removal, to form p-type electricity spaced apart from each other
Pole layer 50 and N-type electrode layer 60, wherein can be with H when etching2SO4Epitaxial wafer is corroded, by extra Al0.92Si0.08It closes
Gold electrode layer peels off.
Embodiment seven
When prepared by GaN light emitting diode provided in this embodiment, using electron beam transpiration technology, rubbing for Si doping is made
The Al that your content is 0.090.91Si0.09The thickness of alloy electrode, P-type electrode layer 50 and N-type electrode layer 60 is 2500nm, specifically
, step 105 includes the following steps:
Step a5): deposition system is vacuumized, chamber vacuum is 3.5 × 10-8Temperature in support and control reacting furnace
Degree is 230 DEG C；
Step b5): when the temperature and pressure of system reaches setting value, start the sputtering electrode in the source Al, while controlling Al
The power of source sputtering, starts the sputtering in the source Si while sputtering the source Al, and Al electrode is controlled by the power of Si source electrode
The molar content of Si in layer, sputters the source Al and the source Si on transparency conducting layer 40 and N-type GaN layer 10, forms Al0.91Si0.09It closes
Gold.
Step c5): work as Al0.91Si0.09When the thickness of alloy-layer reaches 2500nm, system is closed, and cooled down, will plated
Good Al0.91Si0.09The epitaxial wafer of alloy takes out, and photoresist is arranged on Al/Si alloy-layer, and pass through exposure, development, etching
And it cleans the Al between N-type GaN layer 10 and p-type GaN layer 300.91Si0.09Alloy-layer removal, to form p-type electricity spaced apart from each other
Pole layer 50 and N-type electrode layer 60, wherein can be with H when etching2SO4Epitaxial wafer is corroded, by extra Al0.91Si0.09It closes
Gold electrode layer peels off.
Embodiment eight
The present embodiment provides a kind of LED chips, the GaN light emitting diode including at least one above-described embodiment, wherein this
Embodiment provide LED chip in, due to GaN light emitting diode state P-type electrode layer 50 and N-type electrode layer 60 is all made of Al/
Si alloy is made, i.e., Si material is adulterated in Al metal, uses Al metal phase ratio, the present embodiment with electrode layer in the prior art
It is middle doping Si when reduce Al metal hardness and promoted Al metal electric conductivity, and Al/Si alloy ductility preferably and
It is not easy to be oxidized, the yield of bonding wire can be promoted in encapsulation wire bonding process in this way, so that electrode wires are not easily to fall off, bonding wire is connected more
It is firm, and the promotion of Al/Si alloy conductive can improve effective extension of electric current, therefore, LED core provided in this embodiment
Piece realizes the purpose that electrode wires are not easily to fall off and bonding wire connection is more firm, and improves effective extension of electric current.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should broadly understood, for example, it may be being fixedly connected, be also possible to indirectly connected through an intermediary, can be with
It is the interaction relationship of the connection or two elements inside two elements.For the ordinary skill in the art,
The specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", "vertical", "horizontal",
The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside" are to be based on the orientation or positional relationship shown in the drawings, only
It is for the convenience of describing the present invention and simplifying the description, rather than to indicate or imply that signified device or element must have spy
Fixed orientation is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In description of the invention
In, the meaning of " plurality " is two or more, accurately specifically provide unless otherwise.
The description and claims of this application and term " first ", " second ", " third ", " in above-mentioned attached drawing
The (if present)s such as four " are to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should manage
The data that solution uses in this way are interchangeable under appropriate circumstances, so that embodiments herein described herein for example can be to remove
Sequence other than those of illustrating or describe herein is implemented.In addition, term " includes " and " having " and theirs is any
Deformation, it is intended that cover it is non-exclusive include, for example, containing the process, method of a series of steps or units, system, production
Product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include be not clearly listed or for this
A little process, methods, the other step or units of product or equipment inherently.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of GaN light emitting diode, including the N-type GaN layer on substrate of being cascading, luminescent layer, p-type GaN layer and
Transparency conducting layer, it is characterised in that:
The transparency conducting layer is equipped with P-type electrode layer, and the N-type GaN layer is equipped with the N-type electrode separated with the luminescent layer
Layer, and the P-type electrode layer and the N-type electrode layer are all made of Al/Si alloy and are made.
2. GaN light emitting diode according to claim 1, which is characterized in that the molar content of Si in the Al/Si alloy
For x, the molar content of Al is 1-x, wherein 0.01 < x < 0.1.
3. GaN light emitting diode according to claim 2, which is characterized in that the P-type electrode layer and the N-type electrode
The thickness of layer is between 200-3000nm.
4. GaN light emitting diode according to claim 1 to 3, which is characterized in that the transparency conducting layer is ITO
Layer, the luminescent layer are the luminescent layer of InGaN/GaN multiple quantum wells.
5. a kind of preparation method of GaN light emitting diode, which is characterized in that the described method includes:
N-type GaN layer is formed on the substrate；
Luminescent layer is formed in the N-type GaN layer；
P-type GaN layer is formed on the light-emitting layer；
Transparency conducting layer is formed in the p-type GaN layer；
Al/Si alloy-layer is set on the transparency conducting layer and the N-type GaN layer, to form P-type electrode layer and N-type electrode
Layer, wherein the P-type electrode layer is located on the transparency conducting layer, the N-type electrode layer be located in the N-type GaN layer and with
The luminescent layer separates.
6. the preparation method of GaN light emitting diode according to claim 5, which is characterized in that described transparent to be led described
Al/Si alloy-layer is set in electric layer and the N-type GaN layer to form P-type electrode layer and N-type electrode layer, comprising:
The source Al and the source Si are sputtered on the transparency conducting layer and the N-type GaN layer, form the Al/Si alloy-layer；
Photoresist is set on the Al/Si alloy-layer, and by exposure, development, etching and clean the N-type GaN layer and
Al/Si alloy-layer removal between the p-type GaN layer, to form the P-type electrode layer spaced apart from each other and the N-type
Electrode layer.
7. the preparation method of GaN light emitting diode according to claim 6, which is characterized in that described transparent to be led described
Before sputtering the source Al and the source Si in electric layer and the N-type GaN layer, comprising:
The vacuum degree for controlling reaction chamber is 3 × 10-8-3.5×10-8Support and temperature are 150-300 DEG C；
It is described that the source Al and the source Si are sputtered on the transparency conducting layer and the N-type GaN layer, comprising:
When the vacuum of the reaction chamber is more than 3 × 10-8Support, when temperature is more than 150 DEG C, starting the source Al the source electron beam transpiration Al with
And the source electron beam transpiration Si in the starting source Si, Al/Si alloy-layer is formed on the transparency conducting layer and the N-type GaN layer.
8. according to the preparation method of any GaN light emitting diode of claim 5-7, which is characterized in that
The thickness of the Al/Si alloy-layer is between 200-3000nm.
9. according to the preparation method of any GaN light emitting diode of claim 5-7, which is characterized in that the Al/Si is closed
The molar content of Si is x in layer gold, and the molar content of Al is 1-x, wherein 0.01 < x < 0.1.
10. a kind of LED chip, which is characterized in that including any GaN light emitting diode of at least one claim 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811519132.XA CN109713095A (en) | 2018-12-12 | 2018-12-12 | A kind of GaN light emitting diode and preparation method thereof and LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811519132.XA CN109713095A (en) | 2018-12-12 | 2018-12-12 | A kind of GaN light emitting diode and preparation method thereof and LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109713095A true CN109713095A (en) | 2019-05-03 |
Family
ID=66255619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811519132.XA Pending CN109713095A (en) | 2018-12-12 | 2018-12-12 | A kind of GaN light emitting diode and preparation method thereof and LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109713095A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951964A (en) * | 2021-02-23 | 2021-06-11 | 厦门乾照光电股份有限公司 | LED chip and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664227A (en) * | 2012-04-27 | 2012-09-12 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode (LED) device and formation method thereof |
| CN208111472U (en) * | 2018-01-22 | 2018-11-16 | 淮安澳洋顺昌光电技术有限公司 | A kind of LED aluminium electrode structure of low cost |
-
2018
- 2018-12-12 CN CN201811519132.XA patent/CN109713095A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664227A (en) * | 2012-04-27 | 2012-09-12 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode (LED) device and formation method thereof |
| CN208111472U (en) * | 2018-01-22 | 2018-11-16 | 淮安澳洋顺昌光电技术有限公司 | A kind of LED aluminium electrode structure of low cost |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951964A (en) * | 2021-02-23 | 2021-06-11 | 厦门乾照光电股份有限公司 | LED chip and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102403428B (en) | III group-III nitride nanorod light emitting device and manufacture method thereof | |
| CN102403417B (en) | Group III nitride nanorod light emitting device and method for manufacturing the same | |
| US8368094B2 (en) | Optoelectronic device | |
| CN102800773A (en) | Semiconductor light emitting device and manufacturing method of the same | |
| EP2280427A2 (en) | Light-emitting element and a production method therefor | |
| US9318676B2 (en) | Light emitting device and methods for forming the same | |
| US20130134475A1 (en) | Semiconductor light emitting device | |
| CN102067345A (en) | Method for fabricating semiconductor light-emitting device with double-sided passivation | |
| CN102916099A (en) | Light emitting diode and manufacturing method thereof | |
| TWI493747B (en) | Light emitting diodes and manufacture thereof | |
| CN1147010C (en) | Self-passinvating non-planar junction subgroup III nitride semi-conductor device and its making method | |
| CN103000778A (en) | Light emitting diode structure and manufacturing method thereof | |
| CN102334203B (en) | Method for fabricating light emitting device | |
| CN102623481B (en) | Luminescent device and manufacture method thereof | |
| KR101525913B1 (en) | Verticle light emitting diodes and its fabricating method | |
| CN109713095A (en) | A kind of GaN light emitting diode and preparation method thereof and LED chip | |
| JP3028809B2 (en) | Method for manufacturing semiconductor light emitting device | |
| CN104282811A (en) | Light emitting device and method for making same | |
| KR20140017432A (en) | Preparation of metal particle layer and light emitting device manufactured by using same | |
| CN103035790A (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN109346587A (en) | A kind of GaN Light-Emitting Diode and preparation method thereof and LED chip | |
| JP2006179618A (en) | Semiconductor light emitting device and its manufacturing method | |
| CN107706277B (en) | Manufacturing method of transparent conducting layer and light emitting diode thereof | |
| KR101202731B1 (en) | Method for manufacturing vertical light emitting diode | |
| JP2002151740A (en) | Gallium nitride compound semiconductor device and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190503 |