CN109713047A - A kind of Schottky diode and rectification circuit - Google Patents
A kind of Schottky diode and rectification circuit Download PDFInfo
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- CN109713047A CN109713047A CN201811620030.7A CN201811620030A CN109713047A CN 109713047 A CN109713047 A CN 109713047A CN 201811620030 A CN201811620030 A CN 201811620030A CN 109713047 A CN109713047 A CN 109713047A
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Abstract
The present invention relates to a kind of Schottky diode and rectification circuit, Schottky diode includes: Si substrate (001), N-type Si1‑xGexLayer (004), Ge layers of the first N-type compressive strain (011), Ge layers of the second N-type compressive strain (007), aluminium Al metal layer (008) and tungsten W metal layer (010), wherein the N-type Si1‑xGexLayer (004) is arranged on the surface of the Si substrate (001)；Ge layers of the first N-type compressive strain (011) is arranged in the N-type Si1‑xGexThe surface of layer (004)；Ge layers of the second N-type compressive strain (007) is embedded in Ge layers of the first N-type compressive strain (011)；The aluminium Al metal layer (008) is arranged on the surface of the second N-type compressive strain Ge layers (007)；Preset Schottky contacts of tungsten W metal layer (010) setting on the surface of the first N-type compressive strain Ge layers (011) are specified in region.The electron mobility of Schottky diode can be improved using the embodiment of the present invention.
Description
Technical field
The invention belongs to technical field of integrated circuits, and in particular to a kind of Schottky diode and rectification circuit.
Background technique
Wireless energy transfer system (Wireless Power Transfer, WPT) can break through the limit of conventional transmission line
System, so that conveying electric energy is not necessarily to rely on power transmission line, especially suitable special screne, for example, charge to the robot under dangerous scene,
Or to people's intracorporal man-made organ charging etc..Specifically, the WPT using electromagnetic wave as input energy is known as microwave wireless energy
Transmission system (Microwave Power Transfer, MPT).DC conversion can be electromagnetic radiation by WPT transmitting terminal
It goes out, then converts direct current for the electromagnetic wave received by the receiving end WPT, to realize the conveying of electric energy.Wherein, conversion effect
Rate refers to that WPT converts electromagnetic wave to the efficiency of direct current, is the key index for evaluating WPT performance superiority and inferiority.RECTIFYING ANTENNA is WPT
The critical component of receiving end, and rectifier diode is the core devices of rectification circuit, therefore, the performance of rectifier diode can determine
Determine the maximum conversion efficiency of WPT.
Currently, the Schottky diode of Ge material preparation can be used as rectifier diode.But Schottky diode
Electron mobility need to be improved.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of Schottky diode and rectified currents
Road.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of Schottky diodes, comprising:
It include: Si substrate 001, N-type Si1-xGexLayer the 004, first N-type compressive strain Ge layer 011, Ge layers of the second N-type compressive strain
007, aluminium Al metal layer 008 and tungsten W metal layer 010；
The N-type Si1-xGexThe surface of the Si substrate 001 is arranged in layer 004；
The first N-type compressive strain Ge layer 011 is arranged in the N-type Si1-xGexThe surface of layer 004；
The second N-type compressive strain Ge layer 007 is embedded in the first N-type compressive strain Ge layer 011；
The aluminium Al metal layer 008 is arranged on the surface of the second N-type compressive strain Ge layer 007；
The preset schottky junctions on the surface of the first N-type compressive strain Ge layer 011 are arranged in the tungsten W metal layer 010
Fingertip is determined in region.
In one embodiment of the invention, the Si substrate 001 is to serve as a contrast with a thickness of 300~400 μm of N-type single crystalline Si
Bottom.
In one embodiment of the invention, the N-type Si1-xGexLayer 004 with a thickness of 300~400nm, doping concentration
It is 1.8~2 × 1016cm-2, wherein x > 0.8.
In one embodiment of the invention, the first N-type compressive strain Ge layer 011 with a thickness of 900~1000nm, mix
Miscellaneous concentration is 1.8 × 1014~2 × 1014cm-2。
In one embodiment of the invention, the doping concentration of the second N-type compressive strain Ge layer 007 is 1020cm-3。
In one embodiment of the invention, the thickness of the aluminium Al metal layer 008 and the tungsten W metal layer 010 is
10~20nm.
In one embodiment of the invention, the N-type Si1-xGexLayer 004 is to through recrystallization treated high Ge group
Divide Si1-xGexLayer, it is formed after progress ion implanting.
In one embodiment of the invention, the recrystallization processing, comprising:
On the surface of the Si substrate 001, high-Ge component Si is deposited1-xGexLayer；
To the high-Ge component Si after heating1-xGexLayer, is scanned using continuous laser, wherein the wavelength of laser is
808nm, the power density of the laser are 2.1kW/cm2, the spot size of the laser is 10nm × 1nm, the laser
Movement speed is 20nm/s；
High-Ge component Si after scanning continuous laser1-xGexIt is recrystallized after layer natural cooling.
In one embodiment of the invention, the second N-type compressive strain Ge layer 007, is to the first N-type compressive strain
It is formed after the ion implanting of the progress of Ge layer 011 part.
Another embodiment of the present invention provides rectification circuit, including described in any item Schottky two of above-described embodiment
Pole pipe.
Compared with prior art, the embodiment of the invention provides a kind of Schottky diode and rectification circuit, Schottky two
Grade pipe includes: Si substrate 001, N-type Si1-xGexLayer the 004, first N-type compressive strain Ge layer 011, the second N-type compressive strain Ge layer 007,
Aluminium Al metal layer 008 and tungsten W metal layer 010；The N-type Si1-xGexThe surface of the Si substrate 001 is arranged in layer 004；It is described
First N-type compressive strain Ge layer 011 is arranged in the N-type Si1-xGexThe surface of layer 004；The second N-type compressive strain Ge layer 007
It is embedded in the first N-type compressive strain Ge layer 011；The aluminium Al metal layer 008 is arranged in Ge layers of the second N-type compressive strain
On 007 surface；Preset Xiao Te on the surface of the first N-type compressive strain Ge layer 011 is arranged in the tungsten W metal layer 010
Base contacts in specified region.
In this way, compared to the Schottky diode prepared based on pure Ge, by the electricity of the compressive strain Ge Schottky diode prepared
Transport factor is higher；Also, since laser scanning can make high-Ge component Si1-xGexLayer enters molten state and recrystallizes again, can
To be substantially reduced high-Ge component Si1-xGexCrystal lattice mismatch degree between Si material improves high-Ge component Si1-xGex's
Crystal quality, so that the performance of the Schottky diode based on the preparation of compressive strain Ge material is improved significantly.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of Schottky diode provided in an embodiment of the present invention；
Fig. 2 is a kind of flow diagram of the preparation method of Schottky diode provided in an embodiment of the present invention；
Fig. 3 a- Fig. 3 n is a kind of process schematic representation of the preparation method of Schottky diode provided in an embodiment of the present invention；
Fig. 4 is the specific flow chart of S224 in the embodiment of the present invention；
Fig. 5 is the specific flow chart that second electrode is formed in the embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
The embodiment of the invention provides a kind of Schottky diodes.Referring to Figure 1, Fig. 1 is provided in an embodiment of the present invention
A kind of structural schematic diagram of Schottky diode.
As shown in Figure 1, Schottky diode, comprising: Si substrate 001, N-type Si1-xGexThe 004, first N-type compressive strain Ge of layer
The 011, second N-type compressive strain Ge layer 007 of layer, aluminium Al metal layer 008 and tungsten W metal layer 010.
The N-type Si1-xGexThe surface of the Si substrate 001 is arranged in layer 004.
Specifically, since the price of Si material is lower and stability is good, Si can be chosen as substrate.Certainly,
The preferable material of other stability can be selected as substrate according to the actual situation.
In practical applications, it is formed before other semiconductor layers, Si substrate 001 can be carried out clearly on Si substrate 001
It washes.
Specifically, it is possible, firstly, to cleaning the Si substrate 001 using RCA method；Then, using 10% hydrofluoric acid,
The oxide layer on 011 surface of Si substrate after removal cleaning is conducive to form high-Ge component Si on Si substrate 0011-xGexLayer.
In a kind of implementation, the Si substrate 001 is the N-type single crystal Si substrate with a thickness of 300~400 μm.The N-type
Si1-xGexLayer 004 with a thickness of 300~400nm, doping concentration is 1.8~2 × 1016cm-2, wherein x > 0.8.
It should be noted that due between Si material and Ge material there are lattice mismatch, can be to Ge material after x is greater than 0.8
Material realizes compressive strain.
The first N-type compressive strain Ge layer 011 is arranged in the N-type Si1-xGexThe surface of layer 004.
Specifically, in N-type Si1-xGexThe quality for the first N-type compressive strain Ge layer 011 that the surface of layer 004 is grown is preferable,
Carrier mobility is higher.
In a kind of implementation, the first N-type compressive strain Ge layer 011 with a thickness of 900~1000nm, doping concentration is
1.8×1014~2 × 1014cm-2。
It should be noted that if the thickness of the first N-type compressive strain Ge layer 011 is less than 800nm, schottky device may cause
It is breakdown；Meanwhile the thickness of the first N-type compressive strain Ge layer 011 being made to be less than 1000nm, it can largely reduce device thickness
Degree, convenient for integrated.
It should also be noted that, the first N-type compressive strain Ge layer 011 is to be lightly doped, can be used for generating Schottky contacts, into
And second electrode a2 is formed based on Schottky contacts.
In a kind of implementation, the N-type Si1-xGexLayer 004 is to through recrystallization treated high-Ge component Si1-xGex
Layer, it is formed after progress ion implanting.
Specifically, in the high-Ge component Si after continuous laser scanning and crystallisation by cooling1-xGexIon is injected in layer, than
Such as phosphorus P ion, N-type Si can be formed1-xGexLayer 004.
In a kind of implementation, the recrystallization processing, comprising:
On the surface of the Si substrate 001, high-Ge component Si is deposited1-xGexLayer；
To the high-Ge component Si after heating1-xGexLayer, is scanned using continuous laser, wherein the wavelength of laser is
808nm, the power density of the laser are 2.1kW/cm2, the spot size of the laser is 10nm × 1nm, the laser
Movement speed is 20nm/s；
High-Ge component Si after scanning continuous laser1-xGexIt is recrystallized after layer natural cooling.
Wherein it is possible to form high-Ge component Si on the surface of Si substrate 001 using the method for magnetron sputtering1-xGexLayer.
It should be noted that due to Si substrate 001 and high-Ge component Si1-xGexThere are Interfacial Dislocations defects between layer, and
High-Ge component Si1-xGexDuring layer is grown into thickens on a si substrate, Interfacial Dislocations defect may be made from high Ge group
Divide Si1-xGexThe interface of layer and Si substrate, extends longitudinally to always high-Ge component Si1-xGexThe surface of layer, and then cause to grow
High-Ge component Si1-xGexLayer it is second-rate, be unfavorable for using compressive strain Ge material prepare Schottky diode performance
It is promoted.
Therefore, it can be scanned by continuous laser, make high-Ge component Si1-xGexLayer 002 recrystallizes again into molten state,
High-Ge component Si can be substantially reduced1-xGexCrystal lattice mismatch degree between Si material, makes high-Ge component Si1-xGex's
Dislocation density substantially reduces, and improves high-Ge component Si1-xGexCrystal quality so that based on compressive strain Ge material preparation Xiao Te
The performance of based diode is improved significantly.
The second N-type compressive strain Ge layer 007 is embedded in the first N-type compressive strain Ge layer 011.
In a kind of implementation, the second N-type compressive strain Ge layer 007, is by Ge layers of the first N-type compressive strain
It is formed after the ion implanting of 011 progress part.The doping concentration of the second N-type compressive strain Ge layer 007 is 1020cm-3。
It should be noted that the second N-type compressive strain Ge layer 007 is heavy doping, it can be used for generating Ohmic contact, Jin Erji
First electrode a1 is formed in Ohmic contact.
In another implementation, the thickness and cross-sectional area of the second N-type compressive strain Ge layer 007 are respectively less than described
First N-type compressive strain Ge layer 011, and Ge layers of the surface of the second N-type compressive strain Ge layer 007 and the first N-type compressive strain
011 flush.
The surface of the second N-type compressive strain Ge layer 007 is arranged in the aluminium Al metal layer 008.
The preset schottky junctions on the surface of the first N-type compressive strain Ge layer 011 are arranged in the tungsten W metal layer 010
Fingertip is determined in region.
Specifically, preset Schottky contacts specify region that the table in the first N-type compressive strain Ge layer 011 can be set
Face, the other end in addition to the second N-type compressive strain Ge layer 007.
In a kind of implementation, the thickness of the aluminium Al metal layer 008 and the tungsten W metal layer 010 is 10~20nm.
It should be noted that the aluminium Al metal layer 008 can form ohm with the second N-type compressive strain Ge layer 007
The tungsten in the specified region of preset Schottky contacts on the surface of the first N-type compressive strain Ge layer 011 is arranged in contact
W metal layer 010 can form Schottky contacts with the first N-type compressive strain Ge layer 011.
It should be noted the first electrode a1 formed based on Ohmic contact and second formed based on Schottky contacts
Electrode a2 can be located at the same face, compared to the Schottky diode that first electrode a1 and second electrode a2 are located at top and bottom,
The planar technology that Schottky diode provided in an embodiment of the present invention uses is easier to integrated and technology controlling and process.
As it can be seen that compared to the Schottky diode prepared based on pure Ge, it is provided in an embodiment of the present invention to be prepared by compressive strain Ge
Schottky diode electron mobility it is higher；Also, since laser scanning can make high-Ge component Si1-xGexLayer 002 into
Enter molten state to recrystallize again, high-Ge component Si can be substantially reduced1-xGexCrystal lattice mismatch journey between layer and Si substrate
Degree improves high-Ge component Si1-xGexThe crystal quality of layer, so that the property of the Schottky diode based on the preparation of compressive strain Ge material
It can be improved significantly.In addition, passing through high-Ge component Si1-xGexThe preparation of upper compressive strain Ge structural material, be suitable for microwave without
Heat input Transmission system can be improved carrier mobility, and then improve energy conversion efficiency.
In addition, the active area of Schottky diode provided in an embodiment of the present invention is arranged in N-type Si1-xGexShape in layer surface
At the first N-type compressive strain Ge layer on, so, the anti-latch-up of Schottky diode provided in an embodiment of the present invention is good, property
It can be more preferably.
Embodiment two
The present embodiment on the basis of the above embodiments, provides a kind of preparation method of Schottky diode, the preparation side
Method is used to manufacture the Schottky diode of any of the above-described embodiment.Fig. 2, Fig. 3 a to Fig. 3 n are referred to, Fig. 2 is the embodiment of the present invention
A kind of flow diagram of the preparation method of the Schottky diode provided, Fig. 3 a to Fig. 3 n are provided in an embodiment of the present invention one
The process schematic representation of the preparation method of kind Schottky diode.
Specifically, as shown in Fig. 2, the preparation method includes the following steps:
S202 chooses Si substrate.
In this step, as shown in Figure 3a, since the price of Si material is lower and stability is good, Si can be chosen
As substrate.
It is of course also possible to according to the actual situation, select the preferable material of other stability as substrate.
S204, using the method for magnetron sputtering, at 400 DEG C~500 DEG C, by high-Ge component Si1-xGexTarget material sputtering
It is deposited on the Si substrate surface, forms high-Ge component Si1-xGexLayer.
Wherein, operation pressure is 1.5 × 10-3Method mb, deposition rate 5nm/min, x > 0.8.
In this step, as shown in Figure 3b, the method that magnetron sputtering can be used, at 400 DEG C~500 DEG C, by high Ge
Component Si1-xGexTarget material sputtering deposit forms high-Ge component on 001 surface of Si substrate, on the surface of Si substrate 001
Si1-xGexLayer 002.
S206, using chemical vapor deposition (Chemical Vapor Deposition, CVD) method, in the high Ge group
Divide Si1-xThe surface deposition SiO of Ge layer 0022Protective layer.
It in this step, as shown in Figure 3c, can be in high-Ge component Si1-xThe surface deposition SiO of Ge layer 0022Protective layer
003, with when continuous laser scans, SiO2Protective layer 003 will not melt, can be to high-Ge component Si1-xGexLayer 002 plays guarantor
Shield effect.
Using Finite-Difference Time-Domain Method (Finite-Difference Time-Domain, FDTD), to high-Ge component Si1- xThe emulation experiment of the continuous laser transmission rule of Ge system 808nm shows high-Ge component Si1-xGexLayer 002 on deposit 100nm~
The SiO of 150nm2When, laser is optimal in the transmitance of this layer.
Specifically, can use the method for CVD in high-Ge component Si1-xGexSurface deposition 100nm~150nm of layer 002
SiO2Protective layer 003.
Surface deposition is had the SiO by S2082The high-Ge component Si of protective layer1-xGe layers are heated to 600 DEG C~650 DEG C.
S210, to the high-Ge component Si after heating1-xGexLayer, is scanned using continuous laser.
Wherein, optical maser wavelength 808nm, laser power density 2.1kW/cm2, laser spot size is 10nm × 1nm,
Laser traverse speed is 20nm/s.
S212, the high-Ge component Si after scanning continuous laser1-xGexIt is recrystallized after layer natural cooling.
It, can be to high-Ge component Si in S208 into S2121-xGexLayer 002 using continuous laser scan, and make through
High-Ge component Si after crossing continuous laser scanning1-xGexIt is recrystallized after 002 natural cooling of layer.
Due to Si substrate and high-Ge component Si1-xGexInterfacial Dislocations defect between layer, so high-Ge component Si1-xGexLayer
002 be grown on Si substrate 001 thicken during, Interfacial Dislocations defect may be made from high-Ge component Si1-xGexWith
The interface of Si substrate 001 extends longitudinally to always high-Ge component Si1-xGexSurface, and then lead to the high-Ge component grown
Si1-xGexLayer 002 it is second-rate, be unfavorable for using compressive strain Ge material prepare Schottky diode performance boost.
Therefore, it can be scanned by continuous laser, make high-Ge component Si1-xGexLayer 002 recrystallizes again into molten state,
High-Ge component Si can be substantially reduced1-xGexCrystal lattice mismatch degree between Si material, makes high-Ge component Si1-xGex's
Dislocation density substantially reduces, and improves high-Ge component Si1-xGexCrystal quality so that based on compressive strain Ge material preparation Xiao Te
The performance of based diode is improved significantly.
It should be noted that due between Si material and Ge material there are lattice mismatch, can be to Ge material after x is greater than 0.8
Material realizes compressive strain.
S214, using dry etching from the high-Ge component Si1-xGexThe surface of layer removes the SiO2Protective layer.
In this step, as shown in Figure 3d, it can use dry etching, from the high-Ge component Si1-xGexThe table of layer 002
Face removes the SiO2Protective layer 003.
S216, SiO described to removal2High-Ge component Si after protective layer1-xGexThe surface of layer is processed by shot blasting.
In S214 into S216, dry etching can be used, from the high Ge after continuous laser surface sweeping and crystallisation by cooling
Component Si1-xGexThe surface of layer removes the SiO2Protective layer 003, and to the removal SiO2High-Ge component after protective layer 003
Si1-xGexThe surface of layer 002 is processed by shot blasting.
S218, the high-Ge component Si at 400 DEG C~500 DEG C, after the recrystallization1-xGexP ion, shape are injected in layer
At N-type Si1-xGexLayer.
It in this step, as shown in Figure 3 e, can be at 400~500 DEG C, to the high-Ge component Si after the recrystallization1- xGexP ion is injected in layer 002, injection length 200s, energy 30keV, the doping concentration for forming N-type is 1.8 × 1016~
2×1016cm-2The Si1-xGexLayer 004.
S220, at 350 DEG C, using decompression CVD technique in the N-type Si1-xGexThe surface of layer, growth thickness 900
Ge layers of the compressive strain of~1000nm.
It in this step, as illustrated in figure 3f, can be in N-type Si at 350 DEG C1-xGexThe surface of layer 004, utilizes decompression
CVD technique growth thickness is the compressive strain Ge layer 005 of 900~1000nm.
S222, at 400 DEG C~500 DEG C, Ge layers of injection P ion of Xiang Suoshu compressive strain form the first N-type compressive strain Ge
Layer.
In this step, as shown in figure 3g, P ion, note can be injected to compressive strain Ge layer 005 at 400~500 DEG C
The angle of incidence is 200s, energy 30keV, and the doping concentration for forming N-type is 1.8 × 1014~2 × 1014cm-2Ge layers of compressive strain
011, it can be 1.8 × 10 by the doping concentration of the N-type of formation for convenience of explanation14~2 × 1014cm-2The compressive strain
Ge layers are denoted as the first N-type compressive strain Ge layer 011.
In this way, in the N-type Si after continuous laser scanning and natural cooling recrystallization1-xGexIt is grown on layer 002
The quality of first N-type compressive strain Ge layer 011 is preferable, and carrier mobility is higher.
S224, on Ge layers of the first N-type compressive strain of surface, preset Ohmic contact specifies the injection P in region
Ion, to specify Ge layers of the second N-type compressive strain formed in region in the preset Ohmic contact.
In this step, region can be specified in the preset Ohmic contact on the surface of the first N-type compressive strain Ge layer 011
Interior injection P ion forms the second N-type compressive strain Ge layer 007 to specify in region in preset Ohmic contact.
It is the specific flow chart of S224 in the embodiment of the present invention with reference to Fig. 4, Fig. 4 in a kind of implementation, as shown in figure 4,
S224 can specifically include:
S12 forms the first photoresist on Ge layers of the first N-type compressive strain of surface.
In this step, as illustrated in figure 3h, the first photoresist can be formed on the surface of the first N-type compressive strain Ge layer 011
006。
S14 removes first in the specified region of preset Ohmic contact on Ge layers of the compressive strain of the first N-type of the surface
Photoresist.
In this step, as shown in figure 3i, since subsequent step needs the table in the first N-type compressive strain Ge layer 011
Preset Ohmic contact on face, which is specified, injects P ion in region, therefore, it is necessary to specify area by exposing preset Ohmic contact
The first photoresist 006 in domain, the preset Ohmic contact removed on the surface of the first N-type compressive strain Ge layer 011 are specified
The first photoresist 006 in region.
S16 is injected using ion injection method removing the preset Ohmic contact after the first photoresist and specifying in region
P ion forms Ge layers of the second N-type compressive strain to specify in preset Ohmic contact in region, and removal the first N-type pressure
The first photoresist that the surface of strained ge layer is formed on the part in addition to the preset Ohmic contact specifies region.
In this step, pre- after removing the first photoresist 006 using ion injection method firstly, as shown in Fig. 3 j
If Ohmic contact specify region in inject P ion, preset Ohmic contact specify region in formation n-type doping concentration be
1020cm-3Ge layer 007；Then, as shown in figure 3k, the surface for removing the first N-type compressive strain Ge layer 011, except preset
Ohmic contact specifies the first photoresist 006 formed on the part other than region.
S226 forms the first electrode on Ge layers of surface of the second N-type compressive strain, and answers in first pressure
Become Ge layers of surface and forms the second electrode.
It should be noted that before S226, it can be in the H at 600 DEG C~1000 DEG C2The 2nd N is heated in environment
Type compressive strain Ge layer 007 and the first N-type compressive strain Ge layer 011, to repair since P ion injects and removes the first photoetching
The damage of surface crystal caused by glue.
In this step, the first electrode a1, Yi Ji can be formed on the surface of the second N-type compressive strain Ge layer 007
The surface of the first compressive strain Ge layer 011 forms the second electrode a2.
It should be noted that Schottky contacts needs are lightly doped, so in order to make two since Ohmic contact needs heavy doping
A electrode is arranged in the same face, and meets doping concentration requirement and device function requirement, and therefore, it is necessary to generate the second N-type pressure to answer
Become Ge layer 007.
A kind of " forming first electrode on Ge layers of the second N-type compressive strain of surfaces " tool in implementation, in S226
Body may include:
The first step deposits aluminium Al metal layer, shape using electron beam evaporation on Ge layers of surface of the second N-type compressive strain
At Ohmic contact；
Second step retains the aluminium Al metal layer in the specified region of the preset Ohmic contact, etches described in residue
Aluminum metal layer is to form the first electrode.
In this step, as shown in figure 3k, electron beam evaporation can be utilized on the surface of the second N-type compressive strain Ge layer 007
The Al metal layer 008 of 10~20nm thickness is deposited, Ohmic contact is generated, and then retains the preset Ohmic contact and specifies in region
The Al metal layer 008, the remaining Al metal layer of etching is to form the first electrode a1.
It is the specific flow chart that second electrode is formed in the embodiment of the present invention with reference to Fig. 5, Fig. 5 in another implementation,
As shown in figure 5, " forming second electrode on compressive strain Ge layers of the surface " treatment process in S226 can specifically include:
S22, on the surface of Ge layers of the first electrode and the first N-type compressive strain in addition to the first electrode
Part formed the second photoresist.
It in this step, can be on the surface of the first electrode a1 and the first N-type compressive strain Ge layer 011 except described
Part other than first electrode a1 forms the second photoresist 009.
S23 removes the in the specified region of preset Schottky contacts on Ge layer of the compressive strain of the first N-type of the surface
Two photoresists.
In this step, can be by the surface of the first N-type compressive strain Ge layer 011 as shown in Fig. 3 l, place that S22 is formed
The second photoresist 009 removal in region is specified in preset Schottky contacts, to specify area in preset Schottky contacts
Deposition tungsten W metal layer 010 in domain.
S24 specifies deposition tungsten W gold on region on the surface of remaining second photoresist and the preset Schottky contacts
Belong to layer.
Wherein, remaining second photoresist 009 include: the first electrode a1 surface and first N-type
On the surface of compressive strain Ge layer 011 except the first electrode a1's and the preset Schottky contacts specify region in addition to portion
Divide upper the second photoresist 009 formed.
In this step, as shown in figure 3m, the second photoetching in the specified region of preset Schottky contacts can removed
After glue 009, deposition tungsten W on region is specified on the surface of remaining second photoresist 009 and the preset Schottky contacts
Metal layer 010.
It should be understood that the preset Schottky contacts, which are specified in region, is not covered with the second photoresist 009, in this way,
Preset Schottky contacts specify the W metal layer 010 in region that can be deposited directly on the first N-type compressive strain Ge layer 011
Surface on.
S26 removes remaining second photoresist, and the W metal being deposited on remaining second photoresist
Layer.
In this step, as shown in figure 3n, the W on second photoresist 009 and the second photoresist 009 can be removed
Metal layer 010 only remains the part W metal layer 010 on the surface of the first N-type compressive strain Ge layer 011, so as to by the first N-type pressure
W on the surface of strained ge layer 011, after removing the W metal layer 010 on second photoresist 009 and the second photoresist 009
Metal layer 010, as second electrode a2.
S28, the preset Schottky contacts retained on Ge layers of the compressive strain of the first N-type of the surface are specified on region
The W metal layer as the second electrode.
As it can be seen that in the preparation method of Schottky diode provided in an embodiment of the present invention, compared to what is prepared based on pure Ge
Schottky diode, the electron mobility by the compressive strain Ge Schottky diode prepared are higher；Also, due to laser scanning energy
Enough make high-Ge component Si1-xGexLayer 002 recrystallizes again into molten state, can be substantially reduced high-Ge component Si1-xGexWith Si material
Crystal lattice mismatch degree between material improves high-Ge component Si1-xGexCrystal quality so that be based on compressive strain Ge material system
The performance of standby Schottky diode is improved significantly.
In addition, being located at the preparation side of the Schottky diode of top and bottom compared to first electrode a1 and second electrode a2
The preparation method of method, Schottky diode provided in an embodiment of the present invention is easier to integrated and technology controlling and process using planar technology.
In addition, the preparation method of Schottky diode provided in an embodiment of the present invention, in high-Ge component Si1-xGexFurther extension on layer
The active area that first Ge layers of N-type compressive strain works as Schottky diode, the anti-latch-up of the Schottky diode prepared
Good, performance is more preferably.
Embodiment three
On the basis of the above embodiments, the present invention also provides a kind of rectification circuits, and rectification circuit is by above-described embodiment institute
The Schottky diode stated.Rectification circuit provided in an embodiment of the present invention, including the Schottky diode prepared by compressive strain Ge,
Suitable for microwave wireless energy transmission system, carrier mobility can be improved, and then improve energy conversion efficiency.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. a kind of Schottky diode characterized by comprising Si substrate (001), N-type Si1-xGexLayer (004), the first N-type pressure
Strained ge layer (011), Ge layers of the second N-type compressive strain (007), aluminium Al metal layer (008) and tungsten W metal layer (010), wherein
The N-type Si1-xGexLayer (004) is arranged on the surface of the Si substrate (001)；
Ge layers of the first N-type compressive strain (011) is arranged in the N-type Si1-xGexThe surface of layer (004)；
Ge layers of the second N-type compressive strain (007) is embedded in Ge layers of the first N-type compressive strain (011)；
The Al metal layer (008) is arranged on the surface of the second N-type compressive strain Ge layers (007)；
Preset Schottky contacts of W metal layer (010) setting on the surface of the first N-type compressive strain Ge layers (011)
In specified region.
2. Schottky diode according to claim 1, which is characterized in that
The Si substrate (001) is the N-type single crystal Si substrate with a thickness of 300~400 μm.
3. Schottky diode according to claim 1, which is characterized in that
The N-type Si1-xGexLayer (004) with a thickness of 300~400nm, doping concentration is 1.8~2 × 1016cm-2, wherein x >
0.8。
4. Schottky diode according to claim 1, which is characterized in that
Ge layers of the first N-type compressive strain (011) with a thickness of 900~1000nm, doping concentration is 1.8 × 1014~2 ×
1014cm-2。
5. Schottky diode according to claim 1, which is characterized in that
The doping concentration of second N-type compressive strain Ge layers (007) is 1020cm-3。
6. Schottky diode according to claim 1, which is characterized in that
The thickness of the Al metal layer (008) and the W metal layer (010) is 10~20nm.
7. Schottky diode according to claim 1, which is characterized in that
The N-type Si1-xGexLayer (004) is to through recrystallization treated high-Ge component Si1-xGexLayer, after carrying out ion implanting
It is formed.
8. Schottky diode according to claim 7, which is characterized in that the recrystallization processing, comprising:
On the surface of the Si substrate (001), high-Ge component Si is deposited1-xGexLayer；
To the high-Ge component Si after heating1-xGexLayer, is scanned using continuous laser, wherein the wavelength of laser is 808nm, institute
The power density for stating laser is 2.1kW/cm2, the spot size of the laser is 10nm × 1nm, the movement speed of the laser
For 20nm/s；
High-Ge component Si after scanning continuous laser1-xGexIt is recrystallized after layer natural cooling.
9. Schottky diode according to claim 1, which is characterized in that
Ge layers of the second N-type compressive strain (007) is the ion note that part is carried out to Ge layers of the first N-type compressive strain (011)
It is formed after entering.
10. a kind of rectification circuit, which is characterized in that the rectification circuit includes Xiao Te as described in any one of claims 1 to 9
Based diode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811620030.7A CN109713047A (en) | 2018-12-28 | 2018-12-28 | A kind of Schottky diode and rectification circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811620030.7A CN109713047A (en) | 2018-12-28 | 2018-12-28 | A kind of Schottky diode and rectification circuit |
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| CN109713047A true CN109713047A (en) | 2019-05-03 |
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ID=66257956
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|---|---|---|---|
| CN201811620030.7A Withdrawn CN109713047A (en) | 2018-12-28 | 2018-12-28 | A kind of Schottky diode and rectification circuit |
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| Country | Link |
|---|---|
| CN (1) | CN109713047A (en) |
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2018
- 2018-12-28 CN CN201811620030.7A patent/CN109713047A/en not_active Withdrawn
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