CN109712824A - A kind of method and three-dimensional MXene array using liquid-crystalization MXene building three-dimensional MXene array - Google Patents
A kind of method and three-dimensional MXene array using liquid-crystalization MXene building three-dimensional MXene array Download PDFInfo
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Abstract
The present invention relates to electrochemical fields, in particular to a kind of method and three-dimensional MXene array using liquid-crystalization MXene building three-dimensional MXene array.It is a kind of using liquid-crystalization MXene building three-dimensional MXene array method include: to perform etching MAX phase material, obtain the MXene colloidal solution with satisfactory electrical conductivity；The modifying agent that will then induce MXene to form tridimensional network is added in MXene colloidal solution, is uniformly mixed, and obtains modified Mxene liquid crystal solution；The silicon chip surface with surface hydrophilicity is uniformly then coated into Mxene colloidal solution and obtains one layer of MXene film；Then two panels silicon wafer is placed on the opposite in modified Mxene liquid crystal solution, and carries out rapid cooling after the effect of extra electric field.The technique is closed simply, is reacted easily controllable.And the orientation of array is preferable in the three-dimensional MXene array being prepared, and marshalling.
Description
Technical field
The present invention relates to electrochemical fields, construct MXene gusts of three-dimensional using liquid-crystalization MXene in particular to a kind of
The method and three-dimensional MXene array of column.
Background technique
In recent years, high-energy, high power thick electrode film can scale, sustainability manufacture be realize electrochemical energy it is big
The key of scale storage.Traditional electrode preparation method often leads to accumulating again for two-dimension nano materials, and which has limited ions to exist
Transmission in thick film causes the chemical property of system to be highly dependent on the thickness of film, and being vertically arranged for two-dimensional slice can be with
The directional transmissions of ion are realized, to realize the chemical property unrelated with thickness in supercapacitor.
MXene material is early transition metal carbide and the carbon nitridation of a kind of two-dimensional layered structure developed in recent years
Object is closed, corresponding ternary body phase material is MAX phase.MAX phase is a kind of ternary layered structure carbide or nitride material,
MXene material be usually in aqueous solution selective etch MAX phase obtain.MXene not only has large specific surface area, active sites
The characteristics such as more and atomic layers thick are put, while also there is good metallic conduction sexual clorminance, this kind of material has high elastic modulus
And high carrier migration rate, it has a good application prospect in terms of conductive material and function enhance.
And the MXene solution of liquid crystalline phase be it is a kind of shown in certain temperature and concentration between liquid and crystalline state
Orderly fluid state solves plane membrane electrode and reunites again and the randomly-oriented problem of pore structure.But in the prior art,
The method for preparing the three-dimensional Mxene array grown vertically is more complex.
In view of this, the present invention is specifically proposed.
Summary of the invention
The purpose of the present invention is to provide it is a kind of using liquid-crystalize building three-dimensional MXene array method, simple process,
It is repeated strong.
Another object of the present invention is to provide a kind of three-dimensional MXene arrays, and the orientation of array is preferable, and arrange whole
Together.
Another object of the present invention is to provide a kind of plane membrane electrodes, and the directional transmissions of ion may be implemented, from
And the chemical property unrelated with thickness is realized in supercapacitor.
Above-mentioned purpose to realize the present invention, the following technical scheme is adopted:
A method of three-dimensional MXene array being constructed using liquid-crystalization MXene, is included the following steps:
Modifying agent with liquid crystal characteristic is added in MXene colloidal solution, is uniformly mixed, obtains that there is three-dimensional netted knot
The liquid-crystalization Mxene solution of structure；
The silicon wafer that two panels surface is coated with uniform Mxene colloidal solution is placed on the opposite in liquid-crystalization Mxene solution,
It is acted under extra electric field, wherein the surface that silicon wafer coats Mxene colloidal solution is hydrophilic surface.
The present invention also provides a kind of three-dimensional MXene arrays, are constructed according to a kind of above-mentioned utilization liquid-crystalization MXene three-dimensional
The method of MXene array is prepared.
The present invention also provides a kind of plane membrane electrodes comprising a kind of three-dimensional MXene array.
Compared with the existing technology, the invention has the following advantages:
A kind of method using liquid-crystalization MXene building three-dimensional MXene array provided by the invention, uses with liquid crystal
The modifying agent of characteristic liquid-crystalizes to MXene, preferably provides the MXene liquid crystal molecule system of good rheological performance；Lead to again
It crosses extra electric field and self-assembling method is induced by electric rheological effect and hydrogen bond, realize vertical three-dimensional MXene array in silicon base
It directly constructs, solves plane membrane electrode and reunite again and the randomly-oriented problem of pore structure.Meanwhile simple process, it is applicable in
In large-scale production.
A kind of three-dimensional MXene array provided by the invention, orientation is preferable, and marshalling.
A kind of plane membrane electrode provided by the invention, may be implemented the directional transmissions of ion, thus in super electricity
The chemical property unrelated with thickness is realized in container.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be apparent that, be described below in attached drawing be only certain embodiments of the present invention, therefore should not see
Work is the restriction to protection scope, for those of ordinary skill in the art, without creative efforts, also
It can be with other accompanying drawings can also be obtained according to these attached drawings.
Fig. 1 is the building principles schematic diagram of the invention that three-dimensional MXene array is constructed using liquid-crystalization MXene；
Fig. 2 is the SEM figure of three-dimensional MXene array made from the embodiment of the present invention 1；
Fig. 3 is the EDS figure of three-dimensional MXene array made from the embodiment of the present invention 1；
Fig. 4 is the SEM figure of three-dimensional MXene array made from the embodiment of the present invention 2；
Fig. 5 is the SEM figure of three-dimensional MXene array made from the embodiment of the present invention 3；
Fig. 6 is the SEM figure of three-dimensional MXene array made from the embodiment of the present invention 4.
Specific embodiment
Embodiment of the present invention is described in detail below in conjunction with embodiment, but those skilled in the art will
Understand, the following example is merely to illustrate the present invention, and is not construed as limiting the scope of the invention.It is not specified in embodiment specific
Condition person carries out according to conventional conditions or manufacturer's recommended conditions.Reagents or instruments used without specified manufacturer is
The conventional products that can be obtained by commercially available purchase.
A kind of method using liquid-crystalization MXene building three-dimensional MXene array that the embodiment of the present invention is provided below
And three-dimensional MXene array is briefly described.
A kind of method using liquid-crystalization MXene building three-dimensional MXene array provided by the invention, includes the following steps:
S1, preparation MXene colloidal solution
Specifically MAX phase material is added using chemical liquid phase etching method etching MAX phase material preparation MXene material
In the mixed solution of HCl and fluoride salt, 18~40h of water-bath at a temperature of 25~50 DEG C obtains reaction product, by reaction product
Eccentric cleaning is carried out, until pH value is close to 7, then vacuum drying obtains MXene powder；MXene powder is added to the water, ultrasound
And be centrifuged, obtain upper layer MXene colloidal solution.
Further, MAX phase material is Ti3AlC2、Ti3SiC2And Ti3At least one of AlCN, in present embodiment
Preferably Ti3AlC2；Fluoride salt is LiF, NH4F or KF, preferably LiF in present embodiment.LiF and HCl reaction generates HF pairs
Ti3AlC2It performs etching, obtains MXene material of the surface with functional groups such as-F ,-OH and-O, these surface functional groups are deposited
Good hydrophily is being made it have, can be better dispersed in water.
Further, the molar ratio of HCl and LiF is 3~5:1, such as: 3:1,3.6:1,4:1 and 5:1, present embodiment
In preferably 3.6:1.
S2, liquid-crystalization Mxene solution is obtained
Modifying agent with liquid crystal characteristic is added in above-mentioned MXene colloidal solution, stirs and ultrasound is uniformly mixed it,
Liquid-crystalization Mxene solution can be obtained, and obtain the MXene liquid crystal molecule system with good rheological performance.
Further, the modifying agent with liquid crystal characteristic can be sodium alginate, chitosan or polyvinyl alcohol, modifying agent type
The rheological property of difference, Mxene liquid crystal solution also sends out difference.In present embodiment be preferably sodium alginate, and MXene powder with
The mass ratio of sodium alginate is 1:3~5:1, such as 1:3,1:2,1:1 and 5:1.Specifically, it can use sodium alginate molecule
(SA) modification is regulated and controled to realize that MXene liquid-crystalizes by the ratio of MXene and sodium alginate in control solution
The degree of order and orientation of MXene liquid crystal.Sodium alginate, which is added, can induce MXene to form tridimensional network, substantially reduce
The density of MXene material macroscopic view accumulation, while being also able to maintain intrinsic high conductivity.
Further, sodium alginate is a kind of natural macromolecule amylose extracted from the kelp or sargassum of brown algae,
It is made of linear poly- the mannuronic acid of (1,4)-α-D and the unit of (1,4)-β-L guluronic acid these types structure
Close substance.Specifically, Ti in Mxene colloidal solution3AlC2Surface have more polar group, can evenly spread out, and
And connected in the form of chemical bond with sodium alginate, while sodium alginate is included in MXene material in its network structure, it is formed
Tridimensional network.
S3, the processing of silicon chip surface hydrophily
Silicon wafer is placed in the mixed solution of the concentrated sulfuric acid and hydrogen peroxide, in 60~90 DEG C of 1~5h of water bath processing, clearly
It washes, obtains the silicon wafer of surface hydrophilic.Preferably, the mass fraction of the concentrated sulfuric acid is 98%, wherein the mass fraction of hydrogen peroxide is
30%, and the volume ratio of the concentrated sulfuric acid and hydrogen peroxide is 7:3.
Further, using sulfuric acid and hydrogen peroxide solution modification, by Si/SiO2On surface grafting hydrophilic hydroxy group and
Other oxygen-containing functional groups.Specifically, hydrophily processing is carried out to silicon chip surface using strong acid, is formed in silicon face amorphous
SiOx transition zone, makes silicon face be converted into high energy surface.Its surface because chemical polarity effect there are the hydroxyls-of non-bridged bond
(OH), it is easy to physical absorption water and forms hydrogen bond, so surface has hydrophily, and there are the direct keys such as hydrogen bond, Fan Shi power resultant forces.
The silicon wafer of hydrophilic treated can have the MXene of the hydrophilic radicals such as-OH to realize that stronger interface connects by hydrogen bond action with surface
It connects, realizes the Effective Regulation at interface.
S4, preparation three-dimensional MXene array
Obtain in the S3 step the silicon chip surface with surface hydrophilicity uniformly coat and be prepared in S1 step
MXene colloidal solution improves the surface conductivity of silicon wafer as collector.Specifically, by spin coating mode coats.
Further, two panels same piece of silicon is relatively placed in liquid-crystalization Mxene solution, outer in 0.5~5v adds
By two panels silicon chip extracting after 30~300s of effect in electric field, rapid cooling is carried out using liquid nitrogen, and be transferred in freeze drying box,
Three-dimensional Mxene array is obtained after the completion of dry, as shown in Figure 1, passing through electric rheological effect (electric field driven) MXene liquid crystal molecule circle
When face solidifies, Si/SiO2The effects of surface oxygen functional group is by fluorine, hydroxyl and carboxyl with MXene liquid crystal forms hydrogen bond and altogether
Valence link, to induce the substrate self assembly of MXene liquid crystal molecule.The effect induction MXene liquid crystal point of extra electric field can also be used
Electron current becomes behavior, and summary and induction goes out the influence of electric field strength and dimensional effect to MXene liquid crystal cutting performance and orientations
Rule.
Further, rapid freezing is carried out with liquid nitrogen, cooling time is 5~10s, and is put into freeze drying box dry
For 24 hours~48h, wherein reducing the surface tension of water, using liquid nitrogen rapid freezing and Freeze Drying Technique to guarantee three-dimensional
Mxene array will not be destroyed in the drying process.
The present invention also provides a kind of dimension Mxene arrays, and the orientation of array is preferable, and marshalling.
Feature and performance of the invention are described in further detail with reference to embodiments.
Embodiment 1
S1, preparation MXene colloidal solution
It will be added in 1.3g LiF in the HCl of 30mL 6mol/L, after mixing, weigh the Ti of 1.2g3AlC2Powder adds
Enter in the mixed solution of HCl+LiF, water-bath 40h at a temperature of 45 DEG C；The product of reaction is cleaned and is centrifuged repeatedly, until
For pH value close to 7, vacuum drying obtains MXene powder.
The Mxene powder for weighing 0.2g is added in 25ml deionized water, ultrasonic 1h, and then 3500r/min is obtained after being centrifuged 1h
To upper layer Mxene colloidal solution.
S2, obtain it is sodium alginate-modified after liquid-crystalization Mxene solution
It weighs appropriate sodium alginate powder to be added in S1 step in Mxene colloidal solution obtained, stirs 30min, then
Ultrasonic 30min, can be obtained it is sodium alginate-modified after liquid-crystalization Mxene solution.Wherein, MXene powder and sodium alginate
Mass ratio is 1:3.
S3, the processing of silicon chip surface hydrophily
By mass fraction be 98% the concentrated sulfuric acid and mass fraction be 30% hydrogen peroxide mixed with volume ratio 7:3 it is equal
Even, wherein by the merging of two panels silicon wafer, water bath processing 2h, is cleaned with deionized water at 85 DEG C, obtains the silicon wafer of surface hydrophilic.
S4, preparation three-dimensional MXene array
One layer of MXene colloidal solution of silicon chip surface spin coating obtained in step s3, then by the identical silicon wafer phase of two panels
To be placed in it is sodium alginate-modified after liquid-crystalization Mxene solution in, acted on silicon wafer in the extra electric field of 1.0v after 120s
It takes out, is immediately placed in liquid nitrogen and places 5s, and be transferred in freeze drying box dry 48h, three are obtained after the completion of freeze-drying
Tie up Mxene array.
Embodiment 2
In a kind of method and embodiment 1 using liquid-crystalization MXene building three-dimensional MXene array provided in the present embodiment
Offer it is a kind of using liquid-crystalization MXene building three-dimensional MXene array method basic operation it is consistent, difference is, this reality
It applies in example, the mass ratio of MXene powder and sodium alginate is 1:2.
A kind of three-dimensional is prepared by the method for constructing three-dimensional MXene array using liquid-crystalization MXene middle in this implementation
MXene array.
Embodiment 3
In a kind of method and embodiment 1 using liquid-crystalization MXene building three-dimensional MXene array provided in the present embodiment
Offer it is a kind of using liquid-crystalization MXene building three-dimensional MXene array method basic operation it is consistent, difference is, this reality
It applies in example, the mass ratio of MXene powder and sodium alginate is 1:1.
A kind of three-dimensional is prepared by the method for constructing three-dimensional MXene array using liquid-crystalization MXene middle in this implementation
MXene array.
Embodiment 4
In a kind of method and embodiment 1 using liquid-crystalization MXene building three-dimensional MXene array provided in the present embodiment
Offer it is a kind of using liquid-crystalization MXene building three-dimensional MXene array method basic operation it is consistent, difference is, this reality
It applies in example, the mass ratio of MXene powder and sodium alginate is 5:1.
A kind of three-dimensional is prepared by the method for constructing three-dimensional MXene array using liquid-crystalization MXene middle in this implementation
MXene array.
Fig. 2 is that the SEM of embodiment 1 schemes, and Fig. 4 is that the SEM of embodiment 2 schemes, and Fig. 5 is the SEM figure of embodiment 3 and Fig. 6 is
The SEM of embodiment 4 schemes, as can be seen that the MXene array degree of order increases as SA amount increases from above-mentioned figure, arranges more whole
Together, and MXene piece orientation is more preferable, more levels off to orthogonal array, but the mass ratio of MXene powder and sodium alginate is more than 1:
When 2 (i.e. ratio is 1:3), SA content highest, while orderly aligned degree highest at this time, but SA is excessive, and MXene lamella itself is by SA
It covers, is difficult to find the MXene lamella being vertically arranged；Fig. 2 is the EDS analysis chart of embodiment 1, and implementation can be analyzed from Fig. 2
Comprising elements such as MXene and SA corresponding Ti, C, O, Cl, Na and F in cubical array made from example 1, secondly, from element point
Cloth uniformity finds out the uniformity of MXene array, consistent with the SEM map analysis result of embodiment 1.
In conclusion a kind of method using liquid-crystalization MXene building three-dimensional MXene array provided by the invention, is adopted
Liquid-crystalized with the modifying agent with liquid crystal characteristic to MXene, preferably provides the MXene liquid crystal molecule of good rheological performance
System；Self-assembling method is induced by electric rheological effect and hydrogen bond by extra electric field again, it is MXene gusts vertical in silicon base to realize
Column are directly constructed, and are solved plane membrane electrode and are reunited again and the randomly-oriented problem of pore structure.Meanwhile simple process,
Suitable for large-scale production.
The above is only a preferred embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is made it is any modification,
Equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of method using liquid-crystalization MXene building three-dimensional MXene array, which comprises the steps of:
Modifying agent with liquid crystal characteristic is added in MXene colloidal solution, is uniformly mixed, obtains that there is tridimensional network
Liquid-crystalization Mxene solution；
The silicon wafer that two panels surface is coated with uniform Mxene colloidal solution is placed on the opposite in liquid-crystalization Mxene solution, outside
It is acted under added electric field, wherein the surface of the silicon wafer coating Mxene colloidal solution is hydrophilic surface.
2. a kind of method using liquid-crystalization MXene building three-dimensional MXene array according to claim 1, feature exist
In the mass ratio of the MXene and the modifying agent is 1:3~5:1.
3. a kind of method using liquid-crystalization MXene building three-dimensional MXene array according to claim 2, feature exist
In the mass ratio of the MXene and the modifying agent is 1:3~1:1.
4. a kind of method using liquid-crystalization MXene building three-dimensional MXene array according to claim 1, feature exist
In the modifying agent with liquid crystal characteristic is sodium alginate, chitosan or polyvinyl alcohol；
Preferably, the modifying agent with liquid crystal characteristic is sodium alginate.
5. a kind of method using liquid-crystalization MXene building three-dimensional MXene array according to claim 1, feature exist
In the condition of extra electric field is: voltage is 0.5~5v, and the energization action time is 30~300s.
6. a kind of method using liquid-crystalization MXene building three-dimensional MXene array according to claim 1, feature exist
In further including that the silicon wafer after DC Electric Field is placed in liquid nitrogen to freeze.
7. a kind of method using liquid-crystalization MXene building three-dimensional MXene array according to claim 1, feature exist
In the preparation method of the MXene colloidal solution is: MAX phase material is added in the mixed solution of HCl and fluoride salt and is reacted,
MXene powder is obtained after reaction product is cleaned；The MXene powder is added to the water, ultrasound is simultaneously centrifuged, and obtains upper layer
MXene colloidal solution；The MAX phase material is Ti3AlC2、Ti3SiC2And Ti3At least one of AlCN；The fluoride salt
For LiF, NaF or KF, and the molar ratio of the HCl and the fluoride salt is 3~5:1.
8. a kind of method using liquid-crystalization MXene building three-dimensional MXene array according to claim 1, feature exist
In the silicon wafer with surface hydrophilicity is obtained by the way that silicon wafer to be placed in the mixed solution of the concentrated sulfuric acid and hydrogen peroxide；
Preferably, the mass fraction of the concentrated sulfuric acid is 98%, and the mass fraction of the hydrogen peroxide is 30%, and the dense sulphur
The volume ratio of the sour and described hydrogen peroxide is 7:3.
9. a kind of three-dimensional MXene array, which is characterized in that its it is according to any one of claims 1 to 8 it is a kind of utilize liquid
The method of crystallization MXene building three-dimensional MXene array is prepared.
10. a kind of plane membrane electrode, which is characterized in that it includes a kind of three-dimensional MXene array as claimed in claim 9.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110648864A (en) * | 2019-09-30 | 2020-01-03 | 常州大学 | Manufacturing method of flexible low-temperature-resistant water system supercapacitor |
| CN112537773A (en) * | 2019-09-20 | 2021-03-23 | 浙江工业大学 | Method for vertically growing MXene on conductive substrate |
| CN114437302A (en) * | 2021-12-31 | 2022-05-06 | 天津大学 | MXene nano liquid crystal composite soft actuator and preparation method and application thereof |
| CN114843700A (en) * | 2022-04-18 | 2022-08-02 | 西南交通大学 | Highly ordered terminated MXene and preparation method and application thereof |
| CN116289170A (en) * | 2023-01-16 | 2023-06-23 | 江南大学 | Liquid crystal elastomer/MXene composite fiber soft driver with multiple stimulus responses and preparation method and application thereof |
| JP7432180B2 (en) | 2020-02-26 | 2024-02-16 | 株式会社村田製作所 | Pastes and conductive films and their manufacturing methods |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108250846A (en) * | 2018-01-22 | 2018-07-06 | 西南交通大学 | A kind of preparation method of conductive ink and conductive powder |
| CN108417713A (en) * | 2018-02-28 | 2018-08-17 | 北京大学深圳研究生院 | A kind of Organic Thin Film Transistors of the layer containing bilayer dielectric and preparation method thereof |
| CN108620003A (en) * | 2018-05-25 | 2018-10-09 | 哈尔滨工业大学 | The telescopic preparation method with the high MXene/ graphene composite aerogels for being electromagnetically shielded effect |
-
2019
- 2019-02-12 CN CN201910113618.1A patent/CN109712824B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108250846A (en) * | 2018-01-22 | 2018-07-06 | 西南交通大学 | A kind of preparation method of conductive ink and conductive powder |
| CN108417713A (en) * | 2018-02-28 | 2018-08-17 | 北京大学深圳研究生院 | A kind of Organic Thin Film Transistors of the layer containing bilayer dielectric and preparation method thereof |
| CN108620003A (en) * | 2018-05-25 | 2018-10-09 | 哈尔滨工业大学 | The telescopic preparation method with the high MXene/ graphene composite aerogels for being electromagnetically shielded effect |
Non-Patent Citations (2)
| Title |
|---|
| WEN DENG等: ""All-sprayed-processable, large-area, and flexible perovskite/MXene-based photodetector arrays for photocommunication"", 《ADV.OPTICAL MATER》 * |
| YU XIA等: ""Thickness-independent capacitance of vertically aligned liquid-crystalline MXenes"", 《NATURE》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112537773A (en) * | 2019-09-20 | 2021-03-23 | 浙江工业大学 | Method for vertically growing MXene on conductive substrate |
| CN112537773B (en) * | 2019-09-20 | 2022-07-22 | 浙江工业大学 | Method for vertically growing MXene on conductive substrate |
| CN110648864A (en) * | 2019-09-30 | 2020-01-03 | 常州大学 | Manufacturing method of flexible low-temperature-resistant water system supercapacitor |
| JP7432180B2 (en) | 2020-02-26 | 2024-02-16 | 株式会社村田製作所 | Pastes and conductive films and their manufacturing methods |
| CN114437302A (en) * | 2021-12-31 | 2022-05-06 | 天津大学 | MXene nano liquid crystal composite soft actuator and preparation method and application thereof |
| CN114843700A (en) * | 2022-04-18 | 2022-08-02 | 西南交通大学 | Highly ordered terminated MXene and preparation method and application thereof |
| CN116289170A (en) * | 2023-01-16 | 2023-06-23 | 江南大学 | Liquid crystal elastomer/MXene composite fiber soft driver with multiple stimulus responses and preparation method and application thereof |
| CN116289170B (en) * | 2023-01-16 | 2024-05-07 | 江南大学 | Liquid crystal elastomer/MXene composite fiber soft driver with multiple stimulus responses and preparation method and application thereof |
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