CN109710181A - A kind of method and system improving NAND FLASH device file access speed - Google Patents
A kind of method and system improving NAND FLASH device file access speed Download PDFInfo
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- CN109710181A CN109710181A CN201811512203.3A CN201811512203A CN109710181A CN 109710181 A CN109710181 A CN 109710181A CN 201811512203 A CN201811512203 A CN 201811512203A CN 109710181 A CN109710181 A CN 109710181A
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- nand flash
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Abstract
The invention discloses a kind of method and system for improving NAND FLASH device file access speed, in existing NAND FLASH storage organization, increase a kind of memory device that access speed ratio NAND FLASH device is fast, and deposit in the list structure for the file organization that original is stored in NAND FLASH backup region in the quick storage device, it is cooperateed with by the division of labor between the quick storage device and original NAND FLASH to improve NAND FLASH device file access speed.Including processor, NAND FLASH memory part and fast storage, processor, NAND FLASH memory part are connected with fast storage by bus.Single cycle operation speed of the present invention is fast, and process is succinct, does not need to carry out block erasing operation, and a chained list operation cycle at least only needs 40ns after improvement, and a chain table handling carries out in one cycle, operates strong real-time.
Description
Technical field
The present invention relates to the high massive store fields of requirement of real-time, and in particular to a kind of raising NAND FLASH device
The method and system of file access speed.
Background technique
The operation of file system is divided into file and establishes and write-in, file reading, the several links of file deletion.File establish with
When write-in, it is written into data write-in file, while establishing in File Table Header or increasing file node, and being written according to data
It is successive, the distributing order of data is pointed out using pointer, establishs or updates file organization chained list；When file is read, traverse first
File organization chained list, and the Data Position pointed out according to file organization chained list, in file data extracted region data；File is deleted
When, the data in deleting file data area, while deleting the node that the data are indicated in file organization chained list.
Based on NAND FLASH device construct file system, no matter FAT YAFFS log file formats, tradition side
Case is the main storage region (Main Field) of real data deposit NAND FLASH, and list structure (knot of file organization
Structure records main storage region Data Position) it is stored in backup region (Spare Field), when file operation, passes through traversal chain first
Table structure first looks for and finds data in main storage region position, then operates to the position data.
By taking K9K8G08U0M NAND FLASH as an example, the once-through operation in file linked list space at least needs 175ns.NAND
FLASH device is 8 data/address multiplex bus, and 1 time file linked list position (foundation, modification etc.) needs no less than 6 periods
(1 data period, 5 address cycles) 1050ns.It requires to carry out block before each NAND FLASH file linked list programming operation
Erasing operation, each piece of erasing typical time period are 2ms.The prior art deficiency and defect poor there are real-time compared with the present invention,
The prior art, which completes once-through operation, about needs 3ms, and it is real-time not to be suitable for the more demanding large capacity for waiting fields of the hard real-times such as military project
Storage application.
Summary of the invention
To solve the above-mentioned problems, a kind of method for improving NAND FLASH device file access speed of the present invention, existing
Have in NAND FLASH storage organization, increases a kind of memory device that access speed ratio NAND FLASH device is fast, and original is deposited
The list structure for the file organization being placed in NAND FLASH backup region is deposited in the quick storage device, and institute is passed through
The division of labor between the quick storage device stated and original NAND FLASH cooperates with to improve NAND FLASH device file access
Speed.The quick storage device is Nonvolatile sram, that is, nvSRAM device.
A kind of system improving NAND FLASH device file access speed, including processor and NAND FLASH memory
Part, processor and NAND FLASH memory part are connected by bus, which is characterized in that further include fast storage, processor
It is connected with quick storage device by bus, the fast storage is stored in NAND FLASH backup region for storing original
File organization list structure, by the division of labor between the quick storage device and original NAND FLASH cooperate with come
Improve NAND FLASH device file access speed.The quick storage device is Nonvolatile sram, that is, nvSRAM device.
Nonvolatile static random access memory (nvSRAM) device single cycle operation speed is fast, and process is succinct, does not need
Block erasing operation is carried out, a chained list operation cycle at least only needs 40ns after improvement, and a chain table handling is in one cycle
It carries out, operates strong real-time.
The beneficial effects of the present invention are: due to being substantially improved for real-time, so that large capacity real-time storage technology be drawn
Enter asking for the large capacity real-time storage for solving this field of long-standing problem to the higher field of the requirement of real-time such as example military project
Topic, therefore there is the application of good market and promotion prospect.
Detailed description of the invention
Fig. 1 is a kind of method and system device composition schematic diagram for improving NAND FLASH device file access speed；
Fig. 2 is that flow chart is established or be written to file；
Fig. 3 is that file reads flow chart；
Fig. 4 is that file deletes flow chart.
Specific embodiment
It is with reference to the accompanying drawing and specific real in order to make those skilled in the art more fully understand technical solution of the present invention
Applying example, the present invention is described in further detail.
As shown in Figure 1, a kind of system for improving NAND FLASH device file access speed, including processor and NAND
FLASH memory part, processor and NAND FLASH memory part are connected by bus, which is characterized in that further include quickly depositing
Reservoir, processor and quick storage device are connected by bus, and the fast storage is stored in NAND for storing original
FLASH backs up the list structure of the file organization in region, passes through the quick storage device and original NAND FLASH
Between the division of labor cooperate with to improve NAND FLASH device file access speed.The quick storage device is non-volatile
SRAM, that is, nvSRAM device.
A method of improving NAND FLASH device file access speed, which is characterized in that in existing NAND FLASH
In storage organization, increase a kind of memory device that access speed ratio NAND FLASH device is fast, and original is stored in NAND
The list structure of file organization in FLASH backup region is deposited in the quick storage device, by described quick
The division of labor between memory device and original NAND FLASH cooperates with to improve NAND FLASH device file access speed.It is described
Quick storage device be Nonvolatile sram, that is, nvSRAM device.
As shown in Fig. 2, the present invention includes with the foundation of next file or write step: processor issues file and establishes or write
Entering order, the main storage area of NAND FLASH is written in subsequent data, meanwhile, file organization chain is establishd or updated in nvSRAM
Table.
As shown in figure 3, the present invention includes with next file read step: processor sending file read command, subsequent time
Go through the file organization chained list read in nvSRAM, the data storage file pointed out according to chained list, in the main storage area NAND FLASH
Data are extracted, data return to processor.
As shown in figure 4, the present invention includes deleting step with next file: processor sending file deletion commands, first time
It goes through and reads file organization chained list in nvSRAM, the data storage file pointed out according to chained list simultaneously updates chained list and then deletes NAND
Data in the main storage area FLASH.
The invention also includes with next file organization list structure initialization step: by being put in originally, NAND FLASH is standby
File organization list structure in part region is put in nvSRAM, when processor needs to operate real data in NAND FLASH
When, the first operation file chained list in nvSRAM, then NAND FLASH is operated.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, therefore equivalent changes made in accordance with the claims of the present invention, is still within the scope of the present invention.
Claims (8)
1. a kind of method for improving NAND FLASH device file access speed, which is characterized in that deposited in existing NAND FLASH
In storage structure, increase a kind of memory device that access speed ratio NAND FLASH device is fast, and original is stored in NAND FLASH
The list structure of file organization in backup region is deposited in the quick storage device, and the fast storage is passed through
The division of labor between part and original NAND FLASH cooperates with to improve NAND FLASH device file access speed.
2. a kind of method for improving NAND FLASH device file access speed according to claim 1, which is characterized in that
The quick storage device is Nonvolatile sram, that is, nvSRAM device.
3. a kind of method for improving NAND FLASH device file access speed according to claim 1, which is characterized in that
Including with the foundation of next file or write step: processor issues file foundation or writing commands, and NAND is written in subsequent data
The main storage area of FLASH, meanwhile, file organization chained list is establishd or updated in nvSRAM.
4. a kind of method for improving NAND FLASH device file access speed according to claim 1, which is characterized in that
Including with next file read step: processor issues file read command, and then traversal reads the file organization in nvSRAM
Chained list, the data storage file pointed out according to chained list extract data in the main storage area NAND FLASH, and data return to processor.
5. a kind of method for improving NAND FLASH device file access speed according to claim 1, which is characterized in that
Including deleting step with next file: processor issues file deletion commands, and first traversal reads file organization chain in nvSRAM
Table, the data storage file pointed out according to chained list simultaneously update chained list and then delete data in the main storage area NAND FLASH.
6. a kind of method for improving NAND FLASH device file access speed according to claim 1, which is characterized in that
Including with next file organization list structure initialization step: the file group in NAND FLASH backup region will be put in originally
It knits list structure to be put in nvSRAM, when processor needs to operate real data in NAND FLASH, first be grasped in nvSRAM
Make file linked list, then NAND FLASH is operated.
7. a kind of system for improving NAND FLASH device file access speed, including processor and NAND FLASH memory
Part, processor and NAND FLASH memory part are connected by bus, which is characterized in that further include fast storage, processor
It is connected with quick storage device by bus, the fast storage is stored in NAND FLASH backup region for storing original
File organization list structure, by the division of labor between the quick storage device and original NAND FLASH cooperate with come
Improve NAND FLASH device file access speed.
8. a kind of system for improving NAND FLASH device file access speed according to claim 7, which is characterized in that
The quick storage device is Nonvolatile sram, that is, nvSRAM device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811512203.3A CN109710181A (en) | 2018-12-11 | 2018-12-11 | A kind of method and system improving NAND FLASH device file access speed |
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| CN201811512203.3A CN109710181A (en) | 2018-12-11 | 2018-12-11 | A kind of method and system improving NAND FLASH device file access speed |
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Citations (3)
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| US20060015687A1 (en) * | 2004-07-13 | 2006-01-19 | Jin-Kook Kim | Non-volatile memory devices having multi-page programming capabilities and related methods of operating such devices |
| CN101014929A (en) * | 2004-07-30 | 2007-08-08 | 美国联合包裹服务公司 | Systems, methods, computer readable medium and apparatus for memory management using nvram |
| CN103577121A (en) * | 2013-11-05 | 2014-02-12 | 中船重工（武汉）凌久电子有限责任公司 | High-reliability linear file access method based on nand flash |
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2018
- 2018-12-11 CN CN201811512203.3A patent/CN109710181A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060015687A1 (en) * | 2004-07-13 | 2006-01-19 | Jin-Kook Kim | Non-volatile memory devices having multi-page programming capabilities and related methods of operating such devices |
| CN101014929A (en) * | 2004-07-30 | 2007-08-08 | 美国联合包裹服务公司 | Systems, methods, computer readable medium and apparatus for memory management using nvram |
| CN103577121A (en) * | 2013-11-05 | 2014-02-12 | 中船重工（武汉）凌久电子有限责任公司 | High-reliability linear file access method based on nand flash |
Non-Patent Citations (2)
| Title |
|---|
| 孟军: "车载数据记录器中Nand Flash文件系统的研究", 《中国优秀博硕士学位论文全文数据库（硕士）工程科技Ⅱ辑》 * |
| 翁正科: "《计算机维护技术》", 30 April 1997, 清华大学出版社 * |
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