CN109709721A - Display device - Google Patents
Display device Download PDFInfo
- Publication number
- CN109709721A CN109709721A CN201910154840.6A CN201910154840A CN109709721A CN 109709721 A CN109709721 A CN 109709721A CN 201910154840 A CN201910154840 A CN 201910154840A CN 109709721 A CN109709721 A CN 109709721A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- frame
- display device
- nanoporous
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention relates to a kind of display devices.The display device includes backlight, control backboard, display layer, quantum stippling film and photosensor array, since quantum dot film layer unit is stimulated the light that can produce different wave length with the color of the different pixel unit of correspondence, it is possible thereby to realize the control of color effect, light source utilization rate is improved；Simultaneously, since quantum dot film layer unit includes nanoporous frame and the quantum dot that is arranged on nanoporous frame, arrangement situation, the size of quantum dot with control quantum dot can be orderly adjusted by nanoporous frame, so that the more uniform stabilization of quantum dot, orderly, to regulate and control the uniformity of luminescent spectrum, the arrangement of color and color, colour gamut is widened, realizes better color display effect；Photosensor array and quantum dot film layer combine as a result, can obtain the sensing image that quality is higher, color is richer, improve the experience property of user.
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of display device.
Background technique
With the continuous development of display technology, people require also increasingly the display quality and color effect of display device
It is high.Display device usually utilizes colored filter (Colour Filter) full-color to achieve the effect that.Illustrative colorized optical filtering
Piece is usually made of glass substrate, black matrix", color layer, generallys use LED (Light Emitting Diode, white light hair
Optical diode) backlight and colored filter cooperate to form colored display.However, this kind colour display mode light source utilization rate
It is low, and the colour gamut of display is narrow.
Therefore, that there are light source utilization rates is low for illustrative colored filter, and the narrow problem of colour gamut of display.
Summary of the invention
Based on this, it is necessary to provide a kind of display dress that can be improved uniformity of luminance and light source utilization rate, broadening colour gamut
It sets.
In order to achieve the object of the present invention, the present invention adopts the following technical scheme:
A kind of display device, comprising:
Backlight；
Backboard is controlled, is placed in above the backlight；
Display layer is arranged on the control backboard；And
Quantum stippling film is arranged on the display layer；
Wherein, the control backboard is provided with photosensor array on the side of the display layer；
The quantum stippling film includes the one or more quantum dot film layer units of substrate and setting on the substrate, more
A quantum dot film layer unit, which is stimulated, generates the light of different wave length, and the quantum dot film layer unit includes nanoporous frame and sets
Set the quantum dot on the nanoporous frame.
The photosensor array is embedded in the control backboard close to the display layer in one of the embodiments,
On side.
The photosensor array is P-type semiconductor-intrinsic semiconductor-electron type half in one of the embodiments,
The photodiode array of conductor structure.
The nanoporous frame is aperture porous silica silicon frame in one of the embodiments, and the aperture is more
Hole is set in the silica framework of hole, and the quantum dot is filled in described hole.
The diameter of described hole is 1nm-7nm in one of the embodiments,.
The inner wall of described hole is silica hole wall in one of the embodiments,.
The wall thickness of described hole is 1nm-2nm in one of the embodiments,.
The quantum dot includes GaAs nano material, gallium nitride nano material, silicon nanometer in one of the embodiments,
One of material, germanium nano material are a variety of.
The display device further includes being arranged in the control backboard close to the backlight in one of the embodiments,
The first polarizer on side；And the second polarizer on the quantum stippling film is set.
A kind of display device, comprising:
Backlight；
Backboard is controlled, is placed in above the backlight；
Display layer is arranged on the control backboard；And
Quantum stippling film is arranged on the display layer；
Wherein, the control backboard is embedded with photosensor array on the side of the display layer；The light sensing
Device array is P-type semiconductor-intrinsic semiconductor-N-type semiconductor structure photodiode array；
The quantum stippling film includes the one or more quantum dot film layer units of substrate and setting on the substrate, more
A quantum dot film layer unit, which is stimulated, generates the light of different wave length, and the quantum dot film layer unit includes nanoporous frame and sets
Set the quantum dot on the nanoporous frame；The nanoporous frame is aperture porous silica silicon frame, described small
Hole is set on the porous silica silicon frame of hole, and the quantum dot is filled in described hole；The diameter of described hole
For 1nm-7nm；The inner wall of described hole is silica hole wall；The wall thickness of described hole is 1nm-2nm.
Above-mentioned display device, including backlight, control backboard, display layer, quantum stippling film and photosensor array, by
The light that can produce different wave length be stimulated in quantum dot film layer unit with the color of the different pixel unit of correspondence, it is possible thereby to
It realizes the control of color effect, improves light source utilization rate；Simultaneously as quantum dot film layer unit includes nanoporous frame and sets
The quantum dot on nanoporous frame is set, the arrangement feelings with control quantum dot can orderly be adjusted by nanoporous frame
Condition, the size of quantum dot so that the more uniform stabilization of quantum dot, orderly, to regulate and control luminescent spectrum, the arrangement of color and color
Uniformity, widen colour gamut, realize better color display effect；Photosensor array and quantum dot film layer combine as a result, energy
The sensing image that quality is higher, color is richer is enough obtained, the experience property of user is improved.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the display device of an embodiment；
Fig. 2 is the structural schematic diagram of the display device of an embodiment；
Fig. 3 is the structural schematic diagram of the control backboard of 1 display device of corresponding diagram；
Fig. 4 is the structural schematic diagram of the quantum stippling film of corresponding diagram 1 or Fig. 2 display device；
Fig. 5 is the structural schematic diagram of the nanoporous frame of 4 quantum dot film layer unit of corresponding diagram；
Fig. 6 is the partial structural diagram of 5 nanoporous frame of corresponding diagram；
Fig. 7 is the partial structural diagram of 5 nanoporous frame of corresponding diagram；
Fig. 8 is the partial structural diagram of 5 nanoporous frame of corresponding diagram.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give preferred embodiment of the invention.But the invention can be realized in many different forms, however it is not limited to herein
Described embodiment.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more saturating
It is thorough comprehensive.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
Body embodiment purpose, it is not intended that in limitation the present invention.
Referring to Fig. 1 and Fig. 2, Fig. 1 and Fig. 2 is the structural schematic diagram of the display device in the present embodiment.
In this example it is shown that device 10 includes backlight 100, control backboard 110, display layer 120 and quantum dot
Color film 130.Control backboard 110 is provided with photosensor array 140 on the side of display layer 120.In one embodiment,
Photosensor array 140 can be embedded in control backboard 110 on the side of display layer 120 (referring to Fig. 1)；It can also be used as
Individual one layer of setting is controlling between backboard 110 and display layer 120 (referring to fig. 2).
In embodiments of the present invention, backlight 100 is set as to including control backboard 110, display layer 120, quantum stippling
The display panel of film 130 and photosensor array 140 emits light source.In one embodiment, backlight can be carried on the back for blue light
Light source.
In embodiments of the present invention, control backboard 110 is set as the luminance of control display layer 120.Wherein, shine shape
State includes the luminous degree of display layer 120.Wherein, luminance is according to the difference for controlling 110 control object of backboard, including difference
Meaning.For example, luminance may include the big of the light transmission rate of liquid crystal display layer when display layer 120 is liquid crystal display layer
It is small.
In one embodiment, control backboard 110 includes substrate and TFT (the Thin Film being disposed on the substrate
Transistor, thin film transistor (TFT)) pixel array.In one embodiment, referring to Fig. 3, when photosensor array 140 is embedded in
When controlling backboard 110 on the side of display layer 120, then controls backboard 110 and include substrate 111 and be arranged in substrate 111
On TFT pixel array 112 and photosensor array 140, TFT pixel and optical sensor can be arranged alternately.Wherein, substrate can
With but one of be not limited to glass substrate, plastic base.In one embodiment, glass substrate can be alkali-free borosilicate
Ultra-thin glass, no alkali borosilicate glass physical characteristic with higher, preferable corrosion resistance, higher thermal stability with
And lower density and higher elasticity modulus.In one embodiment, substrate can be flexible base board, such as the polyamides of yellow
Imines (Polyimide, PI) film or transparent PI film.
In embodiments of the present invention, for the setting of display layer 120 on control backboard 110, the luminance of display layer 120 is controlled
In control backboard 110.Wherein, display layer 120 can be liquid crystal display layer；It is also possible to electroluminescent display layer, such as
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display layer；It can be individual functional layer,
It can be with the combination of multiple functional layers.
In embodiments of the present invention, quantum stippling film 130 is arranged on display layer 120, is set as in excited state
The light for emitting backlight 100 realizes true color, makes the image of display device 10 that colored display effect be presented.
Wherein, referring to fig. 4, quantum stippling film 130 includes substrate 131, the one or more quantum being arranged on substrate 131
Point film layer unit 132 (Fig. 4 is by taking two quantum dot film layer units as an example).Multiple quantum dot film layer units 132 are stimulated generation not
The light of co-wavelength, quantum dot film layer unit 132 include nanoporous frame 132a (referring to Fig. 5) and are arranged in nanoporous frame
Quantum dot on 132a.Substrate 131 can be, but not limited to one of glass substrate, plastic base.In one embodiment, glass
Glass substrate can be alkali-free borosilicate ultra-thin glass, no alkali borosilicate glass physical characteristic with higher, preferable resistance to
Corrosive nature, higher thermal stability and lower density and higher elasticity modulus.
Wherein, different quantum dot film layer units 132, which is stimulated, generates the light of different wave length, can correspond to different pictures
Element, and quantum dot film layer unit 132 be stimulated generation light it is identical as the color of corresponding pixel.Different quantum dot film layer lists
Member 132 can be successively alternately arranged, thus, it can be achieved that the effect that different colours are arranged successively；The number of quantum dot film layer unit 132
Amount can be configured according to the number of pixel corresponding in practical application.
For example, when the color of pixel is respectively red and green and incident light is blue light source, on quantum stippling film 130
It can be correspondingly arranged the quantum dot film layer unit of excitation feux rouges and the quantum dot film layer unit of excitation green light, specifically, with red
The corresponding quantum dot film layer unit of pixel is formed by red quantum dot material, quantum dot film layer unit corresponding with green pixel by
Green quanta point material is formed, and can corresponding be transparent region with blue pixel, thus, red quantum dot material and green
Quanta point material under the excitation of blue light source, issues feux rouges and green light respectively；And transparent region is emitted blue light source.
As a result, when light incident quanta stippling film 130, the light of different colours can produce, realize color effect.Also,
By the combination of exciting light and light source, light intensity can be increased, therefore high light intensity hair can be obtained in the case where low light intensity light source
Light is shown, to improve the utilization rate of light.
Specifically, quantum dot film layer unit 132 includes nanoporous frame 132a and is arranged in nanoporous frame 132a
On quantum dot.Wherein, nanoporous frame 132a is the aperture porous silica silicon frame of self assembly, nanoporous frame
Quantum dot is provided in 132a.Specifically, referring to Fig. 6 and Fig. 7, hole 132b is set on aperture porous silica silicon frame,
Quantum dot 132c is filled in hole 132b.Multiple regular alignment arrangements of hole 132b.
The aperture porous silica silicon frame of self assembly has orderly structure, utilizes the orderly structure filling quantum
The rule compositor of quantum dot, adjustment and the arrangement situation for controlling quantum dot may be implemented in point, meanwhile, aperture enables to quantum
Point is distributed uniformity that is more uniform and realizing luminescent color, can also control the size of quantum dot to realize different luminous face
The adjustment of color.The setting for passing through aperture porous silica silicon frame as a result, can be realized the regulation of luminescent color uniformity, mentions
High light source utilization rate, and colour gamut is widened, realize better color display effect.Wherein, the aperture porous silica of self assembly
Frame can be prepared by using sol-gel method, specifically, by Si (OR)4It is converted into Si (OR)3Si-OH, meanwhile, by surface
The cylindrical micella of activating agent micella synthesis, the micella group of hexagonal array is arranged in by self-assembling technique, by micella group and
Si(OR)3Si-OH is self-assembly of the small structure material that organic/inorganic mixes by collaborative assembly technology, then by dry
Dry and calcining is final to obtain aperture porous silica silicon frame.
In one embodiment, the diameter R size of the hole 132b of aperture porous silica silicon frame is 1nm-7nm, with
Realize the adjustability of quantum dot size.In one embodiment, the inner wall of hole 132b is silica hole wall (referring to Fig. 8),
The wall thickness W of hole is 1nm-2nm, as a result, frame is more stable, to improve the stability of light.
Wherein, quantum dot includes but is not limited to III-V compound semiconductor material nano material, III-V compound
Semiconductor material includes GaAs；Quantum dot further includes but is not limited to gallium nitride nano material, silicon nano material, germanium nano material
One of or it is a variety of.In one embodiment, quantum dot is received using GaAs, gallium nitride nano material, silicon nano material, germanium
Rice material, SiGe nano material (SiGe) are filled on frame as object, so that hydroxyl (- OH) functional group is in hole 132b table
Face is transformed into the frame part of mesopore silicon oxide (referring to Fig. 8).
In embodiments of the present invention, photosensor array 140 is set as sensing the light reflected by fingerprint, according to the light of reflection
Generate image information corresponding with fingerprint.Specifically, as light source, backlight 100 emits the light emitted using backlight 100
Light by quantum stippling film 130 formed luminescent spectrum is adjustable, color uniformity, with high light source utilization rate and wide colour gamut
Light, and directive fingerprint will form stronger reflected light when light source encounters the place of fingerprint wave crest；If encountering fingerprint trough
Place then forms weaker reflected light.Photosensor array 140 utilizes read signal strength or weakness, can rebuild the shape of fingerprint
Shape, so that finally showing the sensing image that mass is higher, color is richer on a display panel.
Wherein, in photosensor array 140 each optical sensor size and number can according to the demand of actual product into
Row selection setting.Multiple optical sensors can arrange in line-column matrix.When photosensor array 140 is embedded in control backboard 110
When, the interval on control 110 substrate of backboard between TFT pixel can be set in optical sensor；When 140 conduct of photosensor array
When controlling between backboard 110 and display layer 120, the setting position of optical sensor is not limited for independent one layer of setting.
In one embodiment, photosensor array is hole type (p type) semiconductor-intrinsic semiconductor (Intrinsic
The photodiode array of semiconductor)-electron type (N-type) semiconductor structure, i.e. PIN type photodiode array, from
And there is higher optics utilization rate, it can be improved the quality of optical information transmitting.PIN type photodiode includes from control backboard
Play p type semiconductor layer, intrinsic semiconductor layer and the n type semiconductor layer successively arranged in 110 directions.
In embodiments of the present invention, display device 10 further includes that setting is controlling backboard 110 on 100 side of backlight
The first polarizer；And the second polarizer on quantum stippling film 130 is set.Pass through the first polarizer and the second polarisation
Plate can be separated the ingredient for the line light polarisation that backlight 100 emits, and a portion makes it through, another portion
The effects of then absorbing, reflect, scattering is divided to keep its hidden, from there through the display effect of color separation Decompression Controlling image.
It should be noted that display device 10 is not limited to above-mentioned stepped construction, different layers can increase according to different demands
The material of specific function for example, increasing other function material in single function film layer, and obtains multi-functional film layer.In addition, display
The lamination order of each film layer can be changed according to required function in device 10, at the same time it can also add as needed
Enter other function film layer etc..
Display device provided in this embodiment, including backlight, control backboard, display layer, quantum stippling film and light pass
Sensor array, since quantum dot film layer unit is stimulated the light that can produce different wave length with the face of the different pixel unit of correspondence
Color improves light source utilization rate it is possible thereby to realize the control of color effect；Simultaneously as quantum dot film layer unit includes nanometer
Porous framework and the quantum dot being arranged on nanoporous frame can be adjusted orderly by nanoporous frame and control quantum
Arrangement situation, the size of quantum dot of point, so that the more uniform stabilization of quantum dot, orderly, to regulate and control luminescent spectrum, color
The uniformity of arrangement and color widens colour gamut, realizes better color display effect；Photosensor array and quantum dot as a result,
Film layer combines, and can obtain the sensing image that quality is higher, color is richer, improve the experience property of user.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of display device characterized by comprising
Backlight；
Backboard is controlled, is placed in above the backlight；
Display layer is arranged on the control backboard；And
Quantum stippling film is arranged on the display layer；
Wherein, the control backboard is provided with photosensor array on the side of the display layer；
The quantum stippling film includes the one or more quantum dot film layer units of substrate and setting on the substrate, Duo Geliang
Son point film layer unit, which is stimulated, generates the light of different wave length, and the quantum dot film layer unit includes that nanoporous frame and setting exist
Quantum dot on the nanoporous frame.
2. display device according to claim 1, which is characterized in that the photosensor array is embedded in the control back
Plate is on the side of the display layer.
3. display device according to claim 2, which is characterized in that the photosensor array is P-type semiconductor-
Intrinsic semiconductor-N-type semiconductor structure photodiode array.
4. display device according to claim 1, which is characterized in that the nanoporous frame is aperture porous silica
Hole is arranged on the aperture porous silica silicon frame in silicon frame, and the quantum dot is filled in described hole.
5. display device according to claim 4, which is characterized in that the diameter of described hole is 1nm-7nm.
6. display device according to claim 4, which is characterized in that the inner wall of described hole is silica hole wall.
7. display device according to claim 4, which is characterized in that the wall thickness of described hole is 1nm-2nm.
8. display device according to claim 1-7, which is characterized in that the quantum dot includes GaAs nanometer
One of material, gallium nitride nano material, silicon nano material, germanium nano material are a variety of.
9. display device according to claim 1-7, which is characterized in that the display device further includes that setting exists
First polarizer of the control backboard on the backlight side；And it is arranged in second on the quantum stippling film
Polarizer.
10. a kind of display device characterized by comprising
Backlight；
Backboard is controlled, is placed in above the backlight；
Display layer is arranged on the control backboard；And
Quantum stippling film is arranged on the display layer；
Wherein, the control backboard is embedded with photosensor array on the side of the display layer；The optical sensor battle array
It is classified as P-type semiconductor-intrinsic semiconductor-N-type semiconductor structure photodiode array；
The quantum stippling film includes the one or more quantum dot film layer units of substrate and setting on the substrate, Duo Geliang
Son point film layer unit, which is stimulated, generates the light of different wave length, and the quantum dot film layer unit includes that nanoporous frame and setting exist
Quantum dot on the nanoporous frame；The nanoporous frame is aperture porous silica silicon frame, and the aperture is more
Hole is set in the silica framework of hole, and the quantum dot is filled in described hole；The diameter of described hole is
1nm-7nm；The inner wall of described hole is silica hole wall；The wall thickness of described hole is 1nm-2nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910154840.6A CN109709721A (en) | 2019-03-01 | 2019-03-01 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910154840.6A CN109709721A (en) | 2019-03-01 | 2019-03-01 | Display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109709721A true CN109709721A (en) | 2019-05-03 |
Family
ID=66266082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910154840.6A Pending CN109709721A (en) | 2019-03-01 | 2019-03-01 | Display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109709721A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110941117A (en) * | 2019-11-28 | 2020-03-31 | 武汉华星光电技术有限公司 | Display panel and electronic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105182601A (en) * | 2015-10-27 | 2015-12-23 | 京东方科技集团股份有限公司 | Array substrate, display panel, display device and manufacturing method |
| CN105204104A (en) * | 2015-10-30 | 2015-12-30 | 京东方科技集团股份有限公司 | Optical filter, production method thereof, display substrate and display device |
| WO2017074097A1 (en) * | 2015-10-28 | 2017-05-04 | 크루셜텍 (주) | Fingerprint image scanning device and display device including same and capable of scanning image |
| CN108415193A (en) * | 2018-02-05 | 2018-08-17 | 惠科股份有限公司 | A kind of display device |
| CN108470747A (en) * | 2018-02-05 | 2018-08-31 | 惠科股份有限公司 | A kind of display panel and display device |
| CN108604296A (en) * | 2016-04-28 | 2018-09-28 | 韩国科泰高科株式会社 | The luminous fingerprint recognition panel of concealed fingerprint recognition and the fingerprint recognition display device including it can be applicable in |
-
2019
- 2019-03-01 CN CN201910154840.6A patent/CN109709721A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105182601A (en) * | 2015-10-27 | 2015-12-23 | 京东方科技集团股份有限公司 | Array substrate, display panel, display device and manufacturing method |
| WO2017074097A1 (en) * | 2015-10-28 | 2017-05-04 | 크루셜텍 (주) | Fingerprint image scanning device and display device including same and capable of scanning image |
| CN105204104A (en) * | 2015-10-30 | 2015-12-30 | 京东方科技集团股份有限公司 | Optical filter, production method thereof, display substrate and display device |
| CN108604296A (en) * | 2016-04-28 | 2018-09-28 | 韩国科泰高科株式会社 | The luminous fingerprint recognition panel of concealed fingerprint recognition and the fingerprint recognition display device including it can be applicable in |
| CN108415193A (en) * | 2018-02-05 | 2018-08-17 | 惠科股份有限公司 | A kind of display device |
| CN108470747A (en) * | 2018-02-05 | 2018-08-31 | 惠科股份有限公司 | A kind of display panel and display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110941117A (en) * | 2019-11-28 | 2020-03-31 | 武汉华星光电技术有限公司 | Display panel and electronic device |
| CN110941117B (en) * | 2019-11-28 | 2021-09-03 | 武汉华星光电技术有限公司 | Display panel and electronic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108695354A (en) | Display | |
| CN105204221B (en) | Color membrane substrates, display panel and display device | |
| CN102738358B (en) | Light emitting diode package and display apparatus having the same | |
| KR102090163B1 (en) | Back-light unit and display apparatus having the same | |
| US8866373B2 (en) | Light emitting device and display device having the same | |
| CN105990396B (en) | Display panel | |
| JP3170916U (en) | Improved structure of backlight light source for display device that improves the expression of color saturation, brightness and white balance | |
| BRPI1000097A2 (en) | color display unit | |
| WO2018076900A1 (en) | Display device | |
| CN110045539A (en) | The manufacturing method and display device of display panel, display panel | |
| CN101091262A (en) | Gan-base semiconductor light emitting element, luminescent device, image display device, planar light source device, and liquid crystal display device assembly | |
| CN107331688B (en) | display panel and preparation method thereof | |
| CN105609060B (en) | Back light unit, display screen and display device | |
| CN108931864A (en) | Display device | |
| CN108957836A (en) | A kind of color membrane substrates and preparation method thereof, display device | |
| CN108538875A (en) | Light path control structure, dot structure and preparation method thereof, display panel | |
| CN107193158A (en) | A kind of preparation method of backlight module, display device and backlight module | |
| CN106773322B (en) | Backlight module and double-sided liquid crystal display | |
| CN108766273A (en) | A kind of micro-led display panel and display device | |
| CN105372871B (en) | Planar light source device and liquid crystal display device | |
| CN109799647A (en) | A kind of backlight and liquid crystal display die set | |
| CN206096710U (en) | Display device | |
| CN109709721A (en) | Display device | |
| CN209249480U (en) | Quantum dot light emitting layer and display panel | |
| CN109860263A (en) | Display panel and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190503 |
|
| RJ01 | Rejection of invention patent application after publication |