CN109698648A - Motor-drive circuit and motor - Google Patents
Motor-drive circuit and motor Download PDFInfo
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- CN109698648A CN109698648A CN201710765422.1A CN201710765422A CN109698648A CN 109698648 A CN109698648 A CN 109698648A CN 201710765422 A CN201710765422 A CN 201710765422A CN 109698648 A CN109698648 A CN 109698648A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/20—Arrangements for starting
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P29/00—Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors
- H02P29/02—Providing protection against overload without automatic interruption of supply
- H02P29/024—Detecting a fault condition, e.g. short circuit, locked rotor, open circuit or loss of load
- H02P29/0241—Detecting a fault condition, e.g. short circuit, locked rotor, open circuit or loss of load the fault being an overvoltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/24—Arrangements for stopping
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
Abstract
The disclosure provides a kind of motor-drive circuit and motor, to solve the problems, such as that motor-drive circuit in the related technology forms drain electrode peak voltage when turning off metal-oxide-semiconductor.The motor-drive circuit inhibits unit 130 by the low side metal-oxide-semiconductor Qi2 drain electrode access peak voltage of the i-th phase in motor-drive circuit, wherein it includes capacitor Ci1, inductance Li1, diode Di1, diode Di2 that the peak voltage, which inhibits unit 130,.When turning off the low side metal-oxide-semiconductor Qi2, the electric current for partially flowing through the load of the i-th phase inductive coils butts up against the capacitor Ci1 charging of the low side metal-oxide-semiconductor Qi2 drain electrode；When opening the low side metal-oxide-semiconductor Qi2 next time, the peak voltage inhibits capacitor Ci1, inductance Li1 and diode Di2 in unit 130 to form oscillating circuit, and the electric current that capacitor Ci1 electric discharge generates passes through diode Di1 to power source bus Vbus through the oscillating circuit.
Description
Technical field
This disclosure relates to field of power electronics, and in particular, to a kind of motor-drive circuit and motor.
Background technique
Currently, in the driving circuit of motor, usually using metal-oxide-semiconductor as switching component.Specifically, PWM control terminal
According to certain control logic, the flash metal-oxide-semiconductor of the every phase of motor-drive circuit or the on-off of low side metal-oxide-semiconductor are successively controlled, with
Control the operating voltage or electric current of every phase load winding.
By taking star connects three-phase without a wherein phase for sensor DC brushless motor as an example, the load winding one of the phase terminates other
Two load windings, the termination flash metal-oxide-semiconductor source electrode and the low side metal-oxide-semiconductor drain electrode.It is turned off in the phase flash metal-oxide-semiconductor,
And in the case that low side metal-oxide-semiconductor is opened, electric current flows through low side metal-oxide-semiconductor by the load winding and flows back to power supply again.If PWM is controlled
The control low side metal-oxide-semiconductor shutdown in end prevents electric current in route since load winding has then in the moment for turning off low side metal-oxide-semiconductor
The perceptual speciality of variation can form peak voltage in the drain electrode of low side metal-oxide-semiconductor.Excessive peak voltage accelerates the loss of metal-oxide-semiconductor,
Even breakdown metal-oxide-semiconductor leads to electrical fault.
Summary of the invention
The disclosure provides a kind of motor-drive circuit and motor, is being turned off with the motor-drive circuit for solving in the related technology
The problem of drain electrode peak voltage is formed when metal-oxide-semiconductor.
To achieve the goals above, disclosure first aspect provides a kind of motor-drive circuit, and the circuit includes N number of phase
Drive module, N are the positive integer for being less than or equal to M greater than 0, and M is the number of phases of the motor；
Wherein, the i-th phase drive module 100 includes flash driving unit 110, low side driving unit 120, peak voltage inhibition
Unit 130, i are the positive integer for being less than or equal to N greater than 0；
The flash driving unit 110 includes flash metal-oxide-semiconductor Qi1；
The grid of the flash metal-oxide-semiconductor Qi1 is for connecting control terminal Vi1, and the drain electrode of the flash metal-oxide-semiconductor Qi1 is for connecting
Power source bus Vbus is met, the source electrode of the flash metal-oxide-semiconductor Qi1 is used to connect the i-th load winding of the motor；
The low metal-oxide-semiconductor Qi2 when driving unit 120 further includes low；
The grid of the low side metal-oxide-semiconductor Qi2 is for connecting control terminal Vi2, and the drain electrode of the low side metal-oxide-semiconductor Qi2 is for connecing
I-th load winding of the motor, the source electrode of the low side metal-oxide-semiconductor Qi2 is for being grounded；
It includes capacitor Ci1, inductance Li1, diode Di1, diode Di2 that the peak voltage, which inhibits unit 130,；
The drain electrode of the first termination low side metal-oxide-semiconductor Qi2 of the capacitor Ci1, described in the second termination of the capacitor Ci1
The anode of diode Di1；The source electrode of the first termination low side metal-oxide-semiconductor Qi2 of the inductance Li1, the second of the inductance Li1
Terminate the anode of the diode Di2；The cathode of the diode Di2 connects the anode of the diode Di1；The diode
The cathode of Di1 is for connecting the power source bus Vbus.
Optionally, the flash driving unit 110 further includes flash grid current vent unit 111, the flash grid
Electric current vent unit 111 includes diode Di3, triode Ti1；
The base stage of the triode Ti1 connects described for connecting the control terminal Vi1, the emitter of the triode Ti1
The grid of flash metal-oxide-semiconductor Qi1, the collector of the triode Ti1 connect the source electrode of the flash metal-oxide-semiconductor Qi1；
The anode of the diode Di3 connects the base stage of the triode Ti1, and the cathode of the diode Di3 connects described three
The emitter of pole pipe Ti1.
Optionally, the flash driving unit 110 includes resistance Ri1, and the resistance Ri1 is series at the control terminal and institute
Between the emitter for stating triode Ti1.
Optionally, the resistance value of the resistance Ri1 isWherein, Ls is the parasitic inductance of the flash metal-oxide-semiconductor Qi1,
The parasitic inductance includes the source electrode parasitic inductance of the flash metal-oxide-semiconductor Qi1 and the parasitic inductance of gate lead；Ciss is described
The grid source electrode input capacitance of flash metal-oxide-semiconductor Qi1.
Optionally, the flash driving unit 110 includes capacitor Ci2, the first termination flash of the capacitor Ci2
The grid of metal-oxide-semiconductor Qi1, the second end ground connection of the capacitor Ci2.
Optionally, the capacitance of the capacitor Ci2 isWherein, Iq is the flash metal-oxide-semiconductor Qi1 grid
Maximum current；Dmax is the maximum duty cycle of the control terminal Vi1 output signal, and f is the work of the control terminal Vi1 output signal
Working frequency, Q are the static electric charge of the grid capacitance of the flash metal-oxide-semiconductor Qi1, and Δ V is the grid source electrode of the flash metal-oxide-semiconductor Qi1
Cut-in voltage.
Optionally, it when the circuit includes multiple phase drive modules, is connected in parallel between the multiple phase drive module.
Disclosure second aspect provides a kind of motor, and the motor includes any one of above-mentioned first aspect or first aspect can
Select motor-drive circuit described in implementation.
The disclosure third aspect provides a kind of control method of motor-drive circuit, and the method is for controlling above-mentioned first
Motor-drive circuit described in aspect, which comprises
Low side off-phases: the first control signal for controlling the control terminal Vi1 is in low potential, so that the flash
Metal-oxide-semiconductor Qi1 is held off；The second control signal for controlling the control terminal Vi2 switches to low potential by high potential, so that
The low side metal-oxide-semiconductor Qi2 switches to off state by open state, flow through the first drain current of i-th load winding to
The first end of the capacitor Ci1 charges；
Low side open stage: the first control signal for controlling the control terminal Vi1 is in low potential, so that the flash
Metal-oxide-semiconductor Qi1 is held off；The second control signal for controlling the control terminal Vi2 switches to high potential by low potential, so that
The low side metal-oxide-semiconductor Qi2 switches to open state, the capacitor Ci1, the inductance Li1 and the diode by off state
Di2 forms oscillating circuit, and the second drain current that the capacitor Ci1 electric discharge generates flows through the oscillating circuit and two pole
Pipe Di1 releases to power source bus Vbus.
Optionally, flash driving unit 110 described in the motor-drive circuit further includes that flash grid current is released list
Member 111, the flash grid current vent unit 111 include diode Di3, triode Ti1；
The base stage of the triode Ti1 is for connecting the control terminal Vi1, and the emitter of the triode Ti1 is for connecting
The grid of the flash metal-oxide-semiconductor Qi1 is connect, the collector of the triode Ti1 is used to connect the source electrode of the flash metal-oxide-semiconductor Qi1；
The anode of the diode Di3 connects the base stage of the triode Ti1, and the cathode of the diode Di3 connects described three
The emitter of pole pipe Ti1；
The method also includes:
Flash open stage: the second control signal for controlling the control terminal Vi2 is in low potential, so that the low side
Metal-oxide-semiconductor Qi2 is held off；The first control signal for controlling the control terminal Vi1 switches to high potential by low potential, described
Diode Di3 is opened, and the first control signal flows through the diode Di3 and fills to the grid capacitance of the flash metal-oxide-semiconductor Qi1
Electricity, so that the flash metal-oxide-semiconductor Qi1 switches to open state by off state；
Flash off-phases: the second control signal for controlling the control terminal Vi2 is in low potential, so that the low side
Metal-oxide-semiconductor Qi2 is held off；The first control signal for controlling the control terminal Vi1 switches to low potential by high potential, described
The emitter and collector of triode Ti1 is connected, and the grid current that the grid capacitance electric discharge of the flash metal-oxide-semiconductor Qi1 generates is logical
The triode Ti1 emitter and collector is crossed to release to i-th load winding.
Through the above technical solutions, the low side metal-oxide-semiconductor Qi2 drain electrode access peak voltage of the i-th phase in motor-drive circuit
Inhibit unit 130.In this way, the electric current for partially flowing through the load of the i-th phase inductive coils can be right when turning off the low side metal-oxide-semiconductor Qi2
It is connected to the capacitor Ci1 charging of the low side metal-oxide-semiconductor Qi2 drain electrode；When opening the low side metal-oxide-semiconductor Qi2 next time, the spike
Voltage inhibits capacitor Ci1, inductance Li1 and diode Di2 in unit 130 to form oscillating circuit, the electricity that capacitor Ci1 electric discharge generates
It flows through the oscillating circuit and passes through diode Di1 to power source bus Vbus.Thus, it is suppressed that turning off the low side metal-oxide-semiconductor
The drain electrode peak voltage generated when Qi2, to reduce the switching loss of the low side metal-oxide-semiconductor.
Detailed description of the invention
Attached drawing is and to constitute part of specification for providing further understanding of the disclosure, with following tool
Body embodiment is used to explain the disclosure together, but does not constitute the limitation to the disclosure.In the accompanying drawings:
Fig. 1 is a kind of motor-drive circuit line map shown in one exemplary embodiment of the disclosure.
Fig. 2 is another motor-drive circuit line map shown in one exemplary embodiment of the disclosure.
Fig. 3 is a kind of equivalent circuit line map shown in one exemplary embodiment of the disclosure.
Fig. 4 is a kind of motor line map shown in one exemplary embodiment of the disclosure.
Description of symbols
10 i-th phase drive module of motor-drive circuit, 100 flash driving unit 110
Low 120 peak voltage of side driving unit inhibits 130 motor 400 of unit
Low 121 flash grid current vent unit 111 of side grid current vent unit
20 power supply of PWM controller, 30 load winding module 40
Specific embodiment
It is described in detail below in conjunction with specific embodiment of the attached drawing to the disclosure.It should be understood that this place is retouched
The specific embodiment stated is only used for describing and explaining the disclosure, is not limited to the disclosure.
Fig. 1 is a kind of motor-drive circuit shown in one exemplary embodiment of the disclosure.The motor-drive circuit 10 can
To include N number of phase drive module, wherein N is the positive integer for being less than or equal to M greater than 0, and M is the number of phases of the motor.To include
For the brush DC three-phase motor of the motor-drive circuit, the number of phases 3, the motor-drive circuit may include 3
The phase drive module also may include 2 phase drive modules, and the disclosure is it is not limited here.
As shown in Figure 1, wherein the i-th phase drive module 100 includes flash driving unit 110, low side driving unit
120, peak voltage inhibits unit 130.Wherein, i is the positive integer for being less than or equal to N greater than 0.
The flash driving unit 110 includes flash metal-oxide-semiconductor Qi1.The grid of the flash metal-oxide-semiconductor Qi1 is for connecting control
For connecting power source bus Vbus, the source electrode of the flash metal-oxide-semiconductor Qi1 is used for for the drain electrode of end Vi1 processed, the flash metal-oxide-semiconductor Qi1
Connect the i-th load winding of the motor.
Wherein, the control terminal Vi1 can be a part of PWM controller.The PWM controller can be according to the electricity
The load change of machine adjusts the duty ratio of each control terminal output signal, to pass through the grid for controlling flash metal-oxide-semiconductor Qi1 electricity
The voltage-controlled system flash metal-oxide-semiconductor Qi1 is on or off.In the specific implementation, there can also be similar above-mentioned function using other
The controller of energy.
With reference to the connection type of above-mentioned flash driving unit 110, when the output signal of control terminal Vi1 is high level, institute
The grid voltage for stating flash metal-oxide-semiconductor Qi1 reaches the cut-in voltage of the flash metal-oxide-semiconductor Qi1, the flash metal-oxide-semiconductor Qi1 hourglass source electrode
Conducting, electric current flow to i-th load winding from the hourglass source electrode that power source bus Vbus flows through the flash metal-oxide-semiconductor Qi1.
The low metal-oxide-semiconductor Qi2 when driving unit 120 further includes low.The grid of the low side metal-oxide-semiconductor Qi2 is for connecting
The drain electrode of control terminal Vi2, the low side metal-oxide-semiconductor Qi2 are for meeting the i-th load winding of the motor, the low side metal-oxide-semiconductor Qi2
Source electrode for being grounded.
Wherein, the control mode of the on or off low side metal-oxide-semiconductor Qi2 can be with reference to above with respect to the flash
The description of metal-oxide-semiconductor Qi1.
It includes capacitor Ci1, inductance Li1, diode Di1, diode Di2 that the peak voltage, which inhibits unit 130,.The electricity
Hold the drain electrode of the first termination low side metal-oxide-semiconductor Qi2 of Ci1, the second termination diode Di1 of the capacitor Ci1 is just
Pole；The source electrode of the first termination low side metal-oxide-semiconductor Qi2 of the inductance Li1, the second termination two pole of the inductance Li1
The anode of pipe Di2；The cathode of the diode Di2 connects the anode of the diode Di1；The cathode of the diode Di1 meets institute
State power source bus Vbus.
To include for three-phase star connects the DC brushless motor of load winding, when motor works normally, the 1st phase of control is driven
Metal-oxide-semiconductor Q11 in the flash driving unit 110 of dynamic model block and the metal-oxide-semiconductor in the low side driving unit of the 2nd phase drive module
Q22 is opened simultaneously, and the electric current in power source bus Vbus flows to the 1st phase load winding after flowing through the hourglass source electrode of the metal-oxide-semiconductor Q11,
Ground wire is flowed to after passing through the hourglass source electrode for flowing through the metal-oxide-semiconductor Q22 after the 2nd phase load winding.Next stage controls the MOS
Pipe Q22 shutdown, and the metal-oxide-semiconductor Q32 in the low side driving unit of the 3rd phase drive module of control is opened, then electric current is flowing through the 1st phase
The 3rd phase load winding is flowed to after load winding, then flows to ground wire after the hourglass source electrode by the metal-oxide-semiconductor Q32.It is possible thereby to control
Electric current on power source bus Vbus successively flows into every two load winding, thus control the rotor structure of motor according to certain revolving speed and
Turn to rotation.
It is worth noting that in the related art, the i-th phase load winding has the perception for the variation for preventing electric current special
Matter will continue to the output capacitance and circuit to the low side metal-oxide-semiconductor in the moment for the metal-oxide-semiconductor for turning off the i-th mutually low side driving unit
In parasitic capacitance in charge, cause the drain electrode of low side metal-oxide-semiconductor and source voltage to increase rapidly, and in the low side metal-oxide-semiconductor
Drain electrode forms the peak voltage that pressure value is more than busbar voltage.The peak voltage can be such that low side metal-oxide-semiconductor punctures, and lead to fault.
In the shutdown of low side metal-oxide-semiconductor, ∫ I (t) V (t) dt can be approximately in switching loss.Moment is raised when turning off low side metal-oxide-semiconductor
Drain voltage increases wherein V (t) item numerical value, increases the switching loss of low side metal-oxide-semiconductor.When motor works normally, motor
The switching frequency of each metal-oxide-semiconductor in driving circuit is usually within the scope of 10~500KHz.When turning off the low side metal-oxide-semiconductor every time
Electric energy loss caused by the peak voltage can be partially converted into heat, propose higher want to the heat dissipation of motor-drive circuit
It asks.
And the technical solution for using the embodiment of the present disclosure to provide, in the low side driving unit of the i-th phase of motor-drive circuit
In 120, the drain electrode access peak voltage of the low side metal-oxide-semiconductor Qi2 inhibits unit 130, in this way, turning off the low side metal-oxide-semiconductor
When Qi2, partially flow through the load of the i-th phase inductive coils electric current butt up against the low side metal-oxide-semiconductor Qi2 drain electrode capacitor Ci1 the
One end charging.The second end of the capacitor Ci1 is clamped to busbar voltage by the diode Di1.
When opening the low side metal-oxide-semiconductor Qi2 next time, the peak voltage inhibits capacitor Ci1, electricity in unit 130
Feel Li1 and diode Di2 and form oscillating circuit, oscillation frequency isWherein L1 is the inductance of the inductance Li1
Value, C1 is the capacitance of the capacitor Ci1.It is worth noting that the concussion period of the oscillating circuit should be less than it is described low
The minimum opening time of side metal-oxide-semiconductor Qi2, those skilled in the art can need to select above-mentioned component according to specifically used
Type.
It is shaken the period in first half, the electric current that the capacitor Ci1 electric discharge generates will be stored in capacitor through the oscillating circuit
Electric energy on Ci1 is transferred in the inductance Li1 and stores；On the later half concussion period, the voltage of the inductance Li1 second end
It rises, the diode Di1 and the diode Di2 are opened, and the electric energy being stored in inductance Li1 is released into the form of electric current
Power source bus Vbus.
In this way, the electric energy for causing drain electrode to generate peak voltage when turning off the low side metal-oxide-semiconductor Qi2 originally is stored in institute
Capacitor Ci1 is stated, inhibits the oscillation electricity in unit 130 through the peak voltage again when opening the low side metal-oxide-semiconductor Qi2 next time
It releases to power source bus Vbus on road.It can inhibit the drain electrode peak voltage generated when turning off the low side metal-oxide-semiconductor Qi2 as a result, from
And reduce the switching loss of the low side metal-oxide-semiconductor Qi2.
For the understanding above-mentioned technical proposal for being more clear those skilled in the art, it is based on identical thinking, the disclosure is real
It applies example and a kind of control method of motor-drive circuit is also provided, the method is used to control motor-drive circuit as shown in Figure 1,
The described method includes:
Low side off-phases: the first control signal for controlling the control terminal Vi1 is in low potential, so that the flash
Metal-oxide-semiconductor Qi1 is held off；The second control signal for controlling the control terminal Vi2 switches to low potential by high potential, so that
The low side metal-oxide-semiconductor Qi2 switches to off state by open state, flow through the first drain current of i-th load winding to
The first end of the capacitor Ci1 charges.
Low side open stage: the first control signal for controlling the control terminal Vi1 is in low potential, so that the flash
Metal-oxide-semiconductor Qi1 is held off；The second control signal for controlling the control terminal Vi2 switches to high potential by low potential, so that
The low side metal-oxide-semiconductor Qi2 switches to open state, the capacitor Ci1, the inductance Li1 and the diode by off state
Di2 forms oscillating circuit, and the second drain current that the capacitor Ci1 electric discharge generates flows through the oscillating circuit and two pole
Pipe Di1 releases to power source bus Vbus.
Wherein, when the control terminal is the output end of PWM controller, can respectively by adjusting PWM control terminal Vi1 or
The duty ratio of the output signal of control terminal Vi2 is switched on and off duration adjust flash metal-oxide-semiconductor Qi1 or low side metal-oxide-semiconductor Qi2,
And output voltage.It is above-mentioned for it is low in off-phases and it is low while open stage division mode be only described low clearly to illustrate
The on or off moment circuital current variation of side metal-oxide-semiconductor Qi2.During the real-world operation of motor, above-mentioned low frontier juncture faulted-stage
Section and low side open stage are not the continuous period.The present invention is not limited by described each phase sequence.
On the basis of motor-drive circuit shown in Fig. 1, as shown in Fig. 2, the flash driving unit 110 further includes flash
Grid current vent unit 111, the flash grid current vent unit 111 include diode Di3, triode Ti1.Described three
For the base stage of pole pipe Ti1 for connecting the control terminal Vi1, the emitter of the triode Ti1 connects the flash metal-oxide-semiconductor Qi1's
Grid, the collector of the triode Ti1 connect the source electrode of the flash metal-oxide-semiconductor Qi1；The anode of the diode Di3 connects described
The base stage of triode Ti1, the cathode of the diode Di3 connect the emitter of the triode Ti1.
The control method of another motor-drive circuit provided below with the embodiment of the present disclosure is to above-mentioned flash grid electricity
The effect of stream vent unit 111 is described in detail.The described method includes:
Flash open stage: the second control signal for controlling the control terminal Vi2 is in low potential, so that the low side
Metal-oxide-semiconductor Qi2 is held off；The first control signal for controlling the control terminal Vi1 switches to high potential by low potential, described
Diode Di3 is opened, and the first control signal flows through the diode Di3 and fills to the grid capacitance of the flash metal-oxide-semiconductor Qi1
Electricity, so that the flash metal-oxide-semiconductor Qi1 switches to open state by off state；
Flash off-phases: the second control signal for controlling the control terminal Vi2 is in low potential, so that the low side
Metal-oxide-semiconductor Qi2 is held off；The first control signal for controlling the control terminal Vi1 switches to low potential by high potential, described
The emitter and collector of triode Ti1 is connected, and the grid current that the grid capacitance electric discharge of the flash metal-oxide-semiconductor Qi1 generates is logical
The triode Ti1 emitter and collector is crossed to release to i-th load winding.
It is worth noting that the triode Ti1 is PNP type triode, the emitter and collector of the triode Ti1
Unlocking condition is that base emitter voltage is greater than predetermined voltage threshold, such as 0.7V.It is switched in the control terminal Vi1 by high potential low
When current potential, the grid capacitance voltage change of the flash metal-oxide-semiconductor Qi1 is lagged, and the base emitter voltage of the triode Ti1 is big at this time
The electric energy stored in predetermined voltage threshold, the grid capacitance is released through triode Ti1 to described i-th negative in the form of electric current
Carry winding.Increase the flash grid current vent unit 111 by the grid in the flash metal-oxide-semiconductor Qi1, increases shutdown
Electric current when the flash metal-oxide-semiconductor Qi1 is released path, and the turn-off speed of the flash metal-oxide-semiconductor Qi1 is accelerated.
Meanwhile there are also emitter and base stage that part of grid pole electric current passes through the triode Ti1, the diode is passed through
Di3.Diode Di3 plays the role of afterflow herein, by the part of grid pole current limit by transistor emitter, base stage and institute
In the circuit for stating diode Di3 composition, reduce the electric current for flowing through the flash metal-oxide-semiconductor Qi1 input capacitance, accelerates flash MOS
The turn-off speed of pipe Qi1.In addition, the afterflow that diode Di3 plays the role of can protect the base-emitter of the triode, this is avoided
Base-emitter is reversed breakdown.
Optionally, the flash driving unit 110 includes resistance Ri1, and the resistance Ri1 is series at the control terminal and institute
Between the emitter for stating triode Ti1.
There is parasitic inductance Ls since flash metal-oxide-semiconductor Qi1 is encapsulated in connecting part and circuit board line, in the control terminal
When the control signal of Vi1 is switched to high level by low level, parasitic inductance Ls and the grid source electrode of the flash metal-oxide-semiconductor Qi1 are defeated
Enter capacitor Ciss and form LC resonance series effect, specifically please refers to equivalent circuit as shown in Figure 3.The LC resonance series effect meeting
The grid of the flash metal-oxide-semiconductor Qi1 is caused to form oscillation.By adjusting the resistance value of resistance Ri1, the LC can be inhibited to go here and there
Join resonance effects, to accelerate the opening speed of the flash metal-oxide-semiconductor Qi1.
In an alternative embodiment, the resistance value of the resistance Ri1 isWherein, Ls is the flash metal-oxide-semiconductor
The parasitic inductance of Qi1, the parasitic inductance include the source electrode parasitic inductance of the flash metal-oxide-semiconductor Qi1 and the parasitism of gate lead
Inductance；Ciss is the grid source electrode input capacitance of the flash metal-oxide-semiconductor Qi1.
Optionally, the flash driving unit 110 includes capacitor Ci2, the first termination flash of the capacitor Ci2
The grid of metal-oxide-semiconductor Qi1, the second end ground connection of the capacitor Ci2.
When opening the flash metal-oxide-semiconductor Qi1, the capacitor Ci2 can be the grid capacitance of the flash metal-oxide-semiconductor Qi1
Charging charge is provided, the opening speed of flash metal-oxide-semiconductor Qi1 is accelerated.If the control terminal Vi1 is the output end of PWM controller,
In a kind of alternative embodiment, the capacitance of the capacitor Ci2 isWherein, Iq is the flash metal-oxide-semiconductor Qi1 grid
The maximum current of pole, the first control signal that the value of Iq can be approximated to be the control terminal Vi1 are in voltage value when high potential
Divided by the quotient of the resistance value of the resistance Ri1.Dmax is the maximum duty cycle of the first control signal.F is the control terminal Vi1
The working frequency of output signal.Q is the static electric charge of the grid capacitance of the flash metal-oxide-semiconductor Qi1, that is, the first control letter
The total electrical charge of grid capacitance when number being in low potential.Δ V is the grid source electrode cut-in voltage of the flash metal-oxide-semiconductor Qi1.
In the specific implementation, this field engineering staff according to the component parameters of actual use and can use need
The capacitance of the resistance Ri1 resistance value and the capacitor Ci2 is set.
Optionally, it when the circuit includes multiple phase drive modules, is connected in parallel between the multiple phase drive module.
For the understanding technical solution of the present invention for being more clear those skilled in the art, the embodiment of the present disclosure also provides one kind
The structural schematic diagram of three-phase direct-current brushless motor, as shown in figure 4, the motor 400 includes the motor-drive circuit 10, PWM
Controller 20, power supply 30 and load winding module 40.Wherein, each phase load winding uses in the load winding module 40
Star connects mode and connects.The PWM controller includes control terminal Vi1~Vi6.
By taking the specific structure of the i-th phase drive module 100 as an example, as shown in figure 4, with the flash in the i-th phase drive module 100
Driving unit 110 is similar, the low side grid current of the low metal-oxide-semiconductor Qi2 grid when driving unit 120 includes being connected to described low
Vent unit 121 and resistance Ri2, capacitor Ci3.The low side grid current vent unit 121 further include triode Ti2 and
Diode Di4.Each component connection relationship and first device each in the flash driving unit 110 in above-mentioned low side driving unit 120
Part connection relationship is similar, and the effect about these components is referred to the description to flash driving unit 110 above, herein not
It repeats again.
Wherein, the motor-drive circuit 10 includes 3 phase drive modules, is connected in parallel between 3 phase drive modules.Often
A phase drive module is connected with the corresponding phase load winding in the load winding module 40, and the flash of each phase drive module drives
Moving cell and low side driving unit connect with the corresponding control port of the PWM controller 20 respectively.Each phase driving unit
Specific connection structure is referred to the description to the i-th phase drive module 100 above, and details are not described herein again.
The preferred embodiment of the disclosure is described in detail in conjunction with attached drawing above, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical solution of the disclosure
Monotropic type, these simple variants belong to the protection scope of the disclosure.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, can be combined in any appropriate way, for example, it is only low in driving unit include it is low while grid
Electric current vent unit, and flash driving unit does not include flash grid current vent unit.The disclosure is to various possible combinations
No further explanation will be given for mode.
In addition, any combination can also be carried out between a variety of different embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought equally should be considered as disclosure disclosure of that.
Claims (10)
1. a kind of motor-drive circuit, which is characterized in that the circuit includes N number of phase drive module, and N is to be less than or wait greater than 0
In the positive integer of M, M is the number of phases of the motor；
Wherein, the i-th phase drive module 100 includes flash driving unit 110, low side driving unit 120, peak voltage inhibition unit
130, the i positive integer to be less than or equal to N greater than 0；
The flash driving unit 110 includes flash metal-oxide-semiconductor Qi1；
The grid of the flash metal-oxide-semiconductor Qi1 is for connecting control terminal Vi1, and the drain electrode of the flash metal-oxide-semiconductor Qi1 is for connecting electricity
The source electrode of source bus Vbus, the flash metal-oxide-semiconductor Qi1 are used to connect the i-th load winding of the motor；
The low metal-oxide-semiconductor Qi2 when driving unit 120 includes low；
For the grid of the low side metal-oxide-semiconductor Qi2 for connecting control terminal Vi2, the drain electrode of the low side metal-oxide-semiconductor Qi2 is described for connecing
I-th load winding of motor, the source electrode of the low side metal-oxide-semiconductor Qi2 is for being grounded；
It includes capacitor Ci1, inductance Li1, diode Di1, diode Di2 that the peak voltage, which inhibits unit 130,；
The drain electrode of the first termination low side metal-oxide-semiconductor Qi2 of the capacitor Ci1, the second termination two pole of the capacitor Ci1
The anode of pipe Di1；The source electrode of the first termination low side metal-oxide-semiconductor Qi2 of the inductance Li1, the second termination of the inductance Li1
The anode of the diode Di2；The cathode of the diode Di2 connects the anode of the diode Di1；The diode Di1's
Cathode is for connecting the power source bus Vbus.
2. circuit according to claim 1, which is characterized in that the flash driving unit 110 further includes flash grid electricity
Vent unit 111 is flowed, the flash grid current vent unit 111 includes diode Di3, triode Ti1；
For the base stage of the triode Ti1 for connecting the control terminal Vi1, the emitter of the triode Ti1 connects the flash
The grid of metal-oxide-semiconductor Qi1, the collector of the triode Ti1 connect the source electrode of the flash metal-oxide-semiconductor Qi1；
The anode of the diode Di3 connects the base stage of the triode Ti1, and the cathode of the diode Di3 connects the triode
The emitter of Ti1.
3. circuit according to claim 2, which is characterized in that the flash driving unit 110 includes resistance Ri1, described
Resistance Ri1 is series between the control terminal and the emitter of the triode Ti1.
4. circuit according to claim 3, which is characterized in that the resistance value of the resistance Ri1 isWherein, Ls is
The parasitic inductance of the flash metal-oxide-semiconductor Qi1, the parasitic inductance include the source electrode parasitic inductance and grid of the flash metal-oxide-semiconductor Qi1
The parasitic inductance of pole pin；Ciss is the grid source electrode input capacitance of the flash metal-oxide-semiconductor Qi1.
5. circuit according to claim 2, which is characterized in that the flash driving unit 110 includes capacitor Ci2, described
The grid of the first termination flash metal-oxide-semiconductor Qi1 of capacitor Ci2, the second end ground connection of the capacitor Ci2.
6. circuit according to claim 5, which is characterized in that the capacitance of the capacitor Ci2 isWherein,
Iq is the maximum current of the flash metal-oxide-semiconductor Qi1 grid；Dmax is the maximum duty cycle of the control terminal Vi1 output signal, f
For the working frequency of the control terminal Vi1 output signal, Q is the static electric charge of the grid capacitance of the flash metal-oxide-semiconductor Qi1, Δ V
For the grid source electrode cut-in voltage of the flash metal-oxide-semiconductor Qi1.
7. circuit according to any one of claims 1 to 6, which is characterized in that when the circuit includes multiple phase driving moulds
When block, it is connected in parallel between the multiple phase drive module.
8. a kind of motor, which is characterized in that the motor includes any one of claim 1 to 7 motor-drive circuit.
9. a kind of control method of motor-drive circuit, which is characterized in that the method is for controlling electricity as described in claim 1
Drive circuit, which comprises
Low side off-phases: the first control signal for controlling the control terminal Vi1 is in low potential, so that the flash metal-oxide-semiconductor
Qi1 is held off；The second control signal for controlling the control terminal Vi2 switches to low potential by high potential, so that described
Low side metal-oxide-semiconductor Qi2 switches to off state by open state, flows through the first drain current of i-th load winding to described
The first end of capacitor Ci1 charges；
Low side open stage: the first control signal for controlling the control terminal Vi1 is in low potential, so that the flash metal-oxide-semiconductor
Qi1 is held off；The second control signal for controlling the control terminal Vi2 switches to high potential by low potential, so that described
Low side metal-oxide-semiconductor Qi2 switches to open state, the capacitor Ci1, the inductance Li1 and the diode Di2 shape by off state
At oscillating circuit, the second drain current that the capacitor Ci1 electric discharge generates flows through the oscillating circuit and the diode Di1
It releases to power source bus Vbus.
10. according to the method described in claim 9, it is characterized in that, flash driving unit described in the motor-drive circuit
110 further include flash grid current vent unit 111, the flash grid current vent unit 111 include diode Di3, three
Pole pipe Ti1；
The base stage of the triode Ti1 is for connecting the control terminal Vi1, and the emitter of the triode Ti1 is for connecting institute
The grid of flash metal-oxide-semiconductor Qi1 is stated, the collector of the triode Ti1 is used to connect the source electrode of the flash metal-oxide-semiconductor Qi1；
The anode of the diode Di3 connects the base stage of the triode Ti1, and the cathode of the diode Di3 connects the triode
The emitter of Ti1；
The method also includes:
Flash open stage: the second control signal for controlling the control terminal Vi2 is in low potential, so that the low side metal-oxide-semiconductor
Qi2 is held off；The first control signal for controlling the control terminal Vi1 switches to high potential, two pole by low potential
Pipe Di3 is opened, and the first control signal flows through the diode Di3 to the gate capacitance charges of the flash metal-oxide-semiconductor Qi1,
So that the flash metal-oxide-semiconductor Qi1 switches to open state by off state；
Flash off-phases: the second control signal for controlling the control terminal Vi2 is in low potential, so that the low side metal-oxide-semiconductor
Qi2 is held off；The first control signal for controlling the control terminal Vi1 switches to low potential, three pole by high potential
The emitter and collector of pipe Ti1 is connected, and the grid current that the grid capacitance electric discharge of the flash metal-oxide-semiconductor Qi1 generates passes through institute
Triode Ti1 emitter and collector is stated to release to i-th load winding.
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| CN201710765422.1A CN109698648B (en) | 2017-08-30 | 2017-08-30 | Motor drive circuit and motor |
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| CN201710765422.1A CN109698648B (en) | 2017-08-30 | 2017-08-30 | Motor drive circuit and motor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110492800A (en) * | 2019-07-25 | 2019-11-22 | 江苏科技大学 | Permanent magnet synchronous motor diode continuousing flow eliminates residual magnetic devices and application method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101461127A (en) * | 2006-06-03 | 2009-06-17 | 依必安-派特圣乔根有限责任两合公司 | Method for operating and electronically commutated motor, and motor for carrying out a method such as this |
| CN103296875A (en) * | 2013-06-04 | 2013-09-11 | 深圳市英威腾电气股份有限公司 | Driving spike voltage suppression circuit |
| CN204118741U (en) * | 2014-09-26 | 2015-01-21 | 百固电气有限公司 | A kind of Active Power Filter-APF |
| CN106452404A (en) * | 2016-07-25 | 2017-02-22 | 天津理工大学 | Active gate control circuit and IGBT electromagnetic interference inhibition method thereof |
| JP6117710B2 (en) * | 2014-01-24 | 2017-04-19 | 株式会社日本自動車部品総合研究所 | Power converter |
-
2017
- 2017-08-30 CN CN201710765422.1A patent/CN109698648B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101461127A (en) * | 2006-06-03 | 2009-06-17 | 依必安-派特圣乔根有限责任两合公司 | Method for operating and electronically commutated motor, and motor for carrying out a method such as this |
| CN103296875A (en) * | 2013-06-04 | 2013-09-11 | 深圳市英威腾电气股份有限公司 | Driving spike voltage suppression circuit |
| JP6117710B2 (en) * | 2014-01-24 | 2017-04-19 | 株式会社日本自動車部品総合研究所 | Power converter |
| CN204118741U (en) * | 2014-09-26 | 2015-01-21 | 百固电气有限公司 | A kind of Active Power Filter-APF |
| CN106452404A (en) * | 2016-07-25 | 2017-02-22 | 天津理工大学 | Active gate control circuit and IGBT electromagnetic interference inhibition method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 丁小刚 等: "开关磁阻电机功率变换器IGBT关断电压尖峰的分析与抑制", 《机电元件》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110492800A (en) * | 2019-07-25 | 2019-11-22 | 江苏科技大学 | Permanent magnet synchronous motor diode continuousing flow eliminates residual magnetic devices and application method |
| CN110492800B (en) * | 2019-07-25 | 2021-05-11 | 江苏科技大学 | Device for eliminating residual magnetism by diode freewheeling of permanent magnet synchronous motor and using method |
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| CN109698648B (en) | 2021-03-26 |
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