CN109698267A - A kind of spin(-)orbit torque magnetic random access memory and its manufacturing method - Google Patents
A kind of spin(-)orbit torque magnetic random access memory and its manufacturing method Download PDFInfo
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- H—ELECTRICITY
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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Abstract
The present invention provides a kind of spin(-)orbit square magnetic random access memory and its manufacturing method, magnetoresistive tunnel junction is provided on Quantum geometrical phase layer, there are defective in magnetoresistive tunnel junction, the defect by ion implantation technology generate, and the projection of injection direction and current direction in Quantum geometrical phase layer are not parallel.In this way, it is blocked since magnetoresistive tunnel junction itself exists, magnetoresistive tunnel junction side defect can be more than the defect of the other side after ion implanting, thus being upwardly formed asymmetric magnetoresistive tunnel junction perpendicular to current source side, when being passed through electric current in Quantum geometrical phase layer, the orientation overturning of magnetosphere magnetic moment is realized.
Description
Technical field
The present invention relates to semiconductor devices and its manufacturing field, in particular to a kind of spin(-)orbit square reluctance type is deposited at random
Reservoir and its manufacturing method.
Background technique
With the continuous development of memory technology and electronic technology, random access memory is widely used, can
It with independence or is integrated in the equipment using random access memory, such as processor, specific integrated circuit or system on chip.
Spin(-)orbit square magnetic random access memory (SOT-MRAM, Spin-Orbit Torque
Magnetoresistive Random Access Memory), it is the magnetic random that random storage is carried out using Magnetic moment reversal
Memory is accessed, has the advantages that high-speed read-write ability, high integration and is repeatedly written infinitely.In the device, benefit
Spin current is generated with Quantum geometrical phase, and then induces the Magnetic moment reversal of magnet, however, overturning of the magnetic moment under the function of current
Direction is random, and effective data access needs the orientation of magnetic moment to overturn, and how to realize that the orientation overturning of magnetic moment is SOT-
The research emphasis of MRAM.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of spin(-)orbit square magnetic random access memory and its manufactures
Method realizes the orientation overturning of magnetic moment in memory.
To achieve the above object, the present invention has following technical solution:
A kind of manufacturing method of spin(-)orbit square magnetic random access memory, comprising:
Substrate is provided；
The magnetic resistance tunnel on Quantum geometrical phase layer and the Quantum geometrical phase layer is sequentially formed over the substrate
Road knot, the magnetoresistive tunnel junction includes the first magnetosphere, tunnel layer and the second magnetosphere stacked gradually from the bottom to top, described
First magnetosphere and second magnetosphere have perpendicular magnetic anisotropy；
Wherein, existing defects in the magnetoresistive tunnel junction, the defect are generated by ion implanting, when the ion implanting,
Magnetoresistive tunnel junction is exposed, and the vertical direction of injection direction and the substrate has angle, the injection direction in the lining
Projecting with the current direction in the spin coupling layer on bottom is non-parallel.
Optionally, the projection of the injection direction over the substrate and the current direction base in the spin coupling layer
This is vertical.
Optionally, the injection ion of the ion implantation technology is N, As, Be, Ar, P or B.
Optionally, the range of the angle is 30 ° -60 °.
Optionally, the step of forming the magnetoresistive tunnel junction include:
Successively carry out the growth of each material layer of magnetoresistive tunnel junction；
The patterning of each material layer of the magnetoresistive tunnel junction is carried out, to form magnetoresistive tunnel junction；
The ion implantation technology is carried out along the injection direction.
Optionally, Quantum geometrical phase layer is formed over the substrate, comprising:
Before the growth of each material layer for successively carrying out magnetoresistive tunnel junction, spin(-)orbit coupling is grown over the substrate
Close the material layer of layer；Then,
The patterning of each material layer for carrying out the magnetoresistive tunnel junction, comprising: carry out the Quantum geometrical phase layer
Material layer patterning and the magnetoresistive tunnel junction each material layer patterning, to be respectively formed Quantum geometrical phase
Layer and magnetoresistive tunnel junction.
Optionally, the magnetoresistive tunnel junction further include: on the pinning layer and the pinning layer on second magnetosphere
Protective layer.
A kind of spin(-)orbit square magnetic random access memory, comprising:
Quantum geometrical phase layer；
Magnetoresistive tunnel junction on the Quantum geometrical phase layer, the magnetoresistive tunnel junction include from the bottom to top according to
The first magnetosphere, tunnel layer and the second magnetosphere of secondary stacking, first magnetosphere and second magnetosphere have vertical
Anisotropy；
Wherein, existing defects in the magnetoresistive tunnel junction, and the current direction magnetic resistance in the Quantum geometrical phase layer
More than the defects of other side, the defect is generated by ion implantation technology for the defects of tunnel knot side.
Optionally, the injection ion of the ion implantation technology is N, As, Be, Ar, P or B.
Optionally, the magnetoresistive tunnel junction further include: on the pinning layer and the pinning layer on second magnetosphere
Protective layer.
Spin(-)orbit square magnetic random access memory and its manufacturing method provided in an embodiment of the present invention, spin(-)orbit coupling
It closes and is provided with magnetoresistive tunnel junction on layer, there are defective in magnetoresistive tunnel junction, when the defect is by exposing magnetoresistive tunnel junction, into
Row ion implantation technology generates, and the current direction in the projection of injection direction on substrate and Quantum geometrical phase layer is uneven
Row, in this way, blocking since magnetoresistive tunnel junction itself exists, magnetoresistive tunnel junction side defect can be more than the other side after ion implanting
Defect, to work as Quantum geometrical phase being upwardly formed laterally asymmetric magnetoresisitve tunnel junction structure perpendicular to current source side
When being passed through electric current in layer, the orientation overturning of magnetosphere magnetic moment is realized.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will to embodiment or
Attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 shows the process of the manufacturing method of spin(-)orbit square magnetic random access memory according to embodiments of the present invention
Schematic diagram；
Fig. 2-4A shows the vertical view that manufacturing method according to an embodiment of the present invention forms memory during memory
And the schematic diagram of the section structure；
Fig. 5 shows the stereochemical structure signal of spin(-)orbit square magnetic random access memory according to an embodiment of the present invention
Figure.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention may be used also
To be implemented using other than the one described here other way, those skilled in the art can be without prejudice in the present invention
Similar popularization is done in the case where culvert, therefore the present invention is not limited by the specific embodiments disclosed below.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table
Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein
Limit the scope of protection of the invention.In addition, the three-dimensional space of length, width and depth should be included in actual fabrication.This
Outside, the present invention can repeat reference numerals and/or letter, this repetition be in different embodiments in order to simplified and clear
Purpose itself does not indicate the relationship between discussed various embodiments and/or setting.
As the description in background technique, the magnetic RAM of random storage is carried out using Magnetic moment reversal,
Have the advantages that high-speed read-write ability, high integration and is repeatedly written infinitely.However, being generated using Quantum geometrical phase
Spin current, so induce magnet Magnetic moment reversal, reverses direction of the magnetic moment under the function of current be it is random, effectively control magnetic
The orientation of square is overturn, could effective data access, the more conducively integrated and industry of spin(-)orbit square magnetic random access memory
Change.
For this purpose, this application provides a kind of manufacturing methods of spin(-)orbit square magnetic random access memory, with reference to Fig. 1-4A
Shown, which includes:
S01 provides substrate 10；
S02 sequentially forms Quantum geometrical phase layer 100 and the Quantum geometrical phase layer 100 on the substrate 10
On magnetoresistive tunnel junction 110, the magnetoresistive tunnel junction 110 include stack gradually from the bottom to top the first magnetosphere 102, then
Layer 104 and the second magnetosphere 106 are worn, first magnetosphere 102 and second magnetosphere 106 have perpendicular magnetic anisotropy；
Wherein, existing defects in the magnetoresistive tunnel junction 110, the defect are generated by ion implanting, the ion implanting
When, magnetoresistive tunnel junction 110 is exposed, and the vertical direction of injection direction and the substrate 10 has angle, the injection direction
Projecting with the direction electric current I in the spin coupling layer 100 on the substrate 10 is non-parallel.
In this application, for ease of description, all directions of spin(-)orbit square magnetic random access memory are defined, are joined
Examine shown in Fig. 5, wherein the direction electric current I is first direction X in the Quantum geometrical phase layer 100, and substrate 10, namely with from
Revolving the vertical direction of 100 place plane of orbit coupling layer is second direction Z, and in substrate, institute is planar vertical with first direction X
Direction be third direction Y.
It should be noted that logical when electric current I is Magnetic moment reversal in induction magnetoresistive tunnel junction 110 in Quantum geometrical phase layer
The electric current entered, that is, the electric current being passed through when write-in data information, the direction electric current I refers to the dimension where the direction electric current I herein
Degree.
In the embodiment of the present application, existing defects in magnetoresistive tunnel junction 110, and the defect is generated by ion implantation technology
, in ion implanting, the ion of injection is entered under certain energy in magnetoresistive tunnel junction 110 so that be filled with from
The structure and ingredient of the magnetoresistive tunnel junction 110 of this sub side change, and this change is defect 112, later and without
The technique of defect repair, renovation technique such as thermal anneal process etc., which will be retained in the magnetoresistive tunnel junction of side
In 110.
And in the ion implantation technology, defect is generated by ion implanting, when ion implanting, exposes magnetoresistive tunnel junction
110, the injection direction of ion implanting and the vertical direction of substrate 10 have angle, and the injection direction is in the substrate 10
On projection with the direction electric current I in the spin coupling layer 100 be it is non-parallel.That is, the injection direction and plane XZ
Between have angle, which is acute angle, for ease of description, by the side plane XZ be denoted as injection side.In ion implanting mistake
Cheng Zhong on magnetoresistive tunnel junction 110 and not covered with mask layer, in state is completely exposed, fully relies on band angle ion and injects
When, characteristic is blocked by injecting structure itself, in this way, blocking since magnetoresistive tunnel junction itself exists, magnetic resistance after ion implanting
The side of tunnel knot towards injection side can inject more ions than another opposite side, and therefore, magnetoresistive tunnel junction injects side defect
The defect of the other side can be more than, thus perpendicular to laterally asymmetric magnetoresisitve tunnel junction structure is formed on current direction, when certainly
When being passed through electric current in rotation orbit coupling layer, the orientation overturning of magnetosphere magnetic moment is realized.
In the embodiment of the present application, the electric current I with reference to shown in Fig. 4 and Fig. 4 A, in the Quantum geometrical phase layer 100
The defects of 110 side 110-1 of direction magnetoresistive tunnel junction is more than the defects of other side 110-2, that is to say, that with the rail that spins
The direction electric current I in road coupling layer 100 is reference axis, and 112 quantity of the defects of the magnetoresistive tunnel junction 110 on one side is greater than another
112 quantity of the defects of the magnetoresistive tunnel junction 110 on side.
Further, injection direction the projection on substrate 10 can be with the direction electric current I in Quantum geometrical phase layer 100
Vertically, that is to say, that the injection direction is parallel with plane YZ.In this way, being upwardly formed better transverse direction not perpendicular to current source side
Symmetrical magnetoresisitve tunnel junction structure, more conducively the orientation overturning of magnetosphere magnetic moment.
The ion of ion implanting can be any ion that can generate defect, it is preferable that the ion of injection can use
N, P, As, B etc., these ions can be provided by traditional ion implantation device, with existing equipment and process compatible, are not necessarily to
Increase processing cost.
In specific application, the acute angle angle for the angle that can according to need to be arranged between injection direction and plane XZ
Degree, more preferably, the range of angle with 30 ° -60 °, can advantageously allow the peak concentration of injection in magnetosphere.
In the embodiment of the present application, Quantum geometrical phase layer 100 is made of the material with SO coupling effect,
Normally, Quantum geometrical phase layer 100 can be metal layer or topological insulator layer with spin coupling effect, it is preferable that
Can choose the material with big Quantum geometrical phase intensity, the material of metal layer for example can for Ta, Pt, W, Hf, Ir,
CuBi, CuIr or AuW etc., the material of topological insulator layer for example can be BiSn, SnTe, BiSe, wait or other IVA, VA and
One of Group VIA compound.
Wherein, magnetoresistive tunnel junction 110 includes the first magnetosphere 102 stacked gradually from the bottom to top, tunnel layer 104 and the
Two magnetospheres 106, the first magnetosphere 102 and the second magnetosphere 106 are formed by the ferromagnetic material with perpendicular magnetic anisotropy, iron
Magnetic material can be fe magnetic material, alloy ferromagnetic material or the magnetic metal oxide of tool etc., for example, can for Co,
The hard magnetic materials such as Fe, CoFeB or FePt.According to specific needs, the first magnetosphere 102 and the second magnetosphere 106 can be phase
Same or different material.
Tunnel layer 104, can be by nonmagnetic metal or insulation material between the first magnetosphere 102 and the second magnetosphere 106
Material is made, and nonmagnetic metal for example can be Cu or Ag, and insulating materials can be for example aluminium oxide, magnesia or hafnium oxide etc..
Further, magnetoresistive tunnel junction 110 can also include the pinning layer 108 on the second magnetosphere 106, pinning layer
108 are used for fixed magnetisation direction, and for ease of description, the pinning layer 108 on second magnetosphere 106 can be denoted as top
Pinning layer, can also the first magnetosphere 102 and can be also provided with bottom pinning layer between magnetoresistive tunnel junction 110, pinning layer
Material for example can be manually antiferromagnetic etc. for CoPt multilayer film.
Further, magnetoresistive tunnel junction 110 can also include the protective layer 109 pricked on top layer 108, and protective layer 109 plays
The effect for preventing magnetosphere 110 to be oxidized, the typically metal material of protective layer 109, such as Ta, Ru etc..
For ease of description, the direction electric current I is denoted as to the length direction of Quantum geometrical phase layer, is specifically being implemented
In example, Quantum geometrical phase layer 100 can be strip channel structure, along the length direction of Quantum geometrical phase layer 100, magnetic resistance
Tunnel knot 110 can be set in the middle part of Quantum geometrical phase layer 100, and magnetoresistive tunnel junction 110 can be along rotation orbit coupling layer
The setting substantially symmetrical about its central axis of 100 length directions.In specific application, it can according to need the shape of setting magnetoresistive tunnel junction 110
Shape and size, in a preferred embodiment, the shape of magnetoresistive tunnel junction 110 can be bar shaped, which can be with spin(-)orbit
Coupling layer 100 has essentially identical or smaller width.
In specific application, above-mentioned SOT-MRAM can arrange in the form of an array, form the storage battle array of SOT- MRAM
Column, the storage array independence or can be integrated in the equipment using SOT-MRAM storage array, equipment such as processor, specially
With integrated circuit or system on chip etc..
The technical solution and technical effect of the application in order to better understand is implemented below with reference to attached drawing to specific
The manufacturing method of example is described in detail.
It should be noted that in specific application, the Quantum geometrical phase layer after patterning can be formed on the substrate
Later, the formation of magnetoresistive tunnel junction is carried out；The material layer and magnetic of Quantum geometrical phase layer can also be successively grown on substrate
After each material layer for hindering tunnel knot, these material layers are patterned together, are respectively formed patterned spin(-)orbit coupling
Close layer and magnetoresistive tunnel junction.It will be described in detail by taking the latter as an example below.
In step S101, substrate 10 is provided, with reference to shown in Fig. 2 (top view) and Fig. 2A (sectional view along AA of Fig. 2).
In the embodiment of the present application, substrate 10 primarily serves supporting role, can be semiconductor substrate or other substrates,
Semiconductor substrate for example can be Si substrate, Ge substrate, SiGe substrate, SOI (silicon-on-insulator, Silicon On
) or GOI (germanium on insulator, Germanium On Insulator) etc. Insulator.In the present embodiment, substrate 10 can be
Silicon substrate.
The material layer 100 ' of Quantum geometrical phase layer is grown on step S102, the substrate 10, and successively carries out magnetic
The growth for hindering each material layer 110 ' of tunnel knot, with reference to shown in Fig. 2 and Fig. 2A.
In the embodiment of the present application, it is magnetic to include at least the first magnetosphere, tunnel layer and second for the magnetoresistive tunnel junction
Layer, it further include the protective layer on the pinning layer and pinning layer on the second magnetosphere in the present embodiment.
Specifically, can be using the spin of method growth metal material such as Ta, Pt of PVD (physical vapour deposition (PVD))
The material layer 100 ' of orbit coupling layer, thickness for example can be 3-5nm.In further embodiments, MBE can also be used
The Quantum geometrical phase layer material of method growth topological insulator material such as BiSn, SnTe of (molecular beam epitaxial growth)
Layer 100 ', thickness for example can be 3-10 nm.
The first magnetospheric material such as Co/CoFeB can be successively grown using sputtering or other suitable modes
The the second magnetospheric material layer 106 ' and CoPt of the bed of material 102 ', the material layer 104 ' of the tunnel layer of MgO, Co/CoFeB etc.
The material layer 109 ' of the protective layer of the material layer 108 ' and Ta of the artificial Antiferromagnetic pinning layer of multilayer film, thickness successively can be with
For 1nm or so, 0.8nm, 1nm, 4-6 nm, 4-6nm.
In step S103, the patterning and the magnetic resistance tunnel of the material layer 100 ' of the Quantum geometrical phase layer are carried out
The patterning of each material layer 110 ' of road knot, to be respectively formed Quantum geometrical phase layer 110 and magnetoresistive tunnel junction 110, reference
Shown in Fig. 3 (top view) and Fig. 3 A (sectional view along AA of Fig. 3).
Patternized technique, pattern chemical industry can be carried out according to the pattern form of Quantum geometrical phase layer and magnetoresistive tunnel junction
The number of skill can be multiple.Normally, Quantum geometrical phase layer has different patterns, spin(-)orbit from magnetoresistive tunnel junction
Coupling layer can be channel design, and magnetoresistive tunnel junction current source direction along channel is axisymmetricly distributed, and magnetoresistive tunnel junction can be with
For strip structure.
In the present embodiment, Quantum geometrical phase layer has different patterns from magnetoresistive tunnel junction, can be by scheming twice
Case chemical industry skill, to be respectively formed Quantum geometrical phase layer 100 and magnetoresistive tunnel junction 110.Specifically, carrying out protective layer 109, nail
The etching of layer 108, the second magnetosphere 104, tunnel layer 104, the first magnetosphere 102, Quantum geometrical phase layer 100 is pricked, until lining
10 surface of bottom, the Quantum geometrical phase layer 100 after forming patterning；Then, continue protective layer 109, pinning layer 108,
The etching of two magnetospheres 104, tunnel layer 104, the first magnetosphere 102, thus, figure is formed on Quantum geometrical phase layer 100
The magnetoresistive tunnel junction 110 of case, as shown in Fig. 3 and Fig. 3 A.
In step S204, tilt-angle ion injection technology is carried out, the injection direction and the angle of the side plane XZ are sharp
Angle, with reference to shown in Fig. 5.
In specific application, the ion of injection can be any ion that can generate defect, it is preferable that injection
Ion can be N, As, Be, Ar, P or B etc., arbitrarily can provide the ion of injection by existing ion implantation apparatus.In addition,
When injection, the ion and dosage injected needed for being selected according to specific needs can be selected in some applications
The small ion of atomic radius, in this way, the damage to tunnel crystal lattice can be mitigated, meanwhile, higher injectant can be used
Amount, to enhance rollover effect.In other applications, the ion that atomic radius can be selected big, this will cause tunnel crystal lattice
It destroys seriously, but there is preferable rollover effect, at this point it is possible to using lesser implantation dosage, to reduce lattice damage.
In injection, the angle of injection direction and the side plane XZ is acute angle, that is, carries out the inclination angle injection of side,
Implant angle can remain unchanged in injection process, can also change but remain and be with the angle of the same side plane XZ
Acute angle.More preferably, angle may range from 30 ° -60 °.
In addition, further, injection direction can be parallel with plane YZ.In this way, being upwardly formed more perpendicular to current source side
The good asymmetric magnetoresisitve tunnel junction structure of transverse direction, more conducively the orientation overturning of magnetosphere magnetic moment.
Under the action of Implantation Energy, the ion of injection enters among magnetoresistive tunnel junction, so that its structure and ingredient occur
Change, this change is defect, and due to being inclination angle injection, magnetoresistive tunnel junction itself, which exists, to be blocked, magnetic resistance tunnel after ion implanting
Road knot side defect can be more than the defect of the other side.In this application, it after injecting ion, and without renovation technique, repairs
Skill of returning to work such as thermal anneal process etc., in this way, defect will retain into each material layer of magnetoresistive tunnel junction of side.
So far, the spin(-)orbit square magnetic random access memory for foring the present embodiment can according to need shape later
At other structures, such as electrode etc..
The manufacturing method of the spin(-)orbit square magnetic random access memory of the embodiment of the present application is carried out above detailed
Description, in addition, present invention also provides the spin(-)orbit square magnetic random access memory formed by above-mentioned manufacturing method, reference
Shown in Fig. 5, which includes:
Quantum geometrical phase layer 100；
Magnetoresistive tunnel junction 110 on the Quantum geometrical phase layer 100, the magnetoresistive tunnel junction 110 include by
Under supreme the first magnetosphere 102 stacked gradually, tunnel layer 104 and the second magnetosphere 106, first magnetosphere 102 and institute
The second magnetosphere 106 is stated with perpendicular magnetic anisotropy；
Wherein, existing defects in the magnetoresistive tunnel junction 110, and the electric current I in the Quantum geometrical phase layer 100
The defects of 110 side 110-1 of direction magnetoresistive tunnel junction is more than the defects of other side 110-2, and the defect is by ion implanting
Technique generates.
Electrode 120 can also be formed on magnetoresistive tunnel junction 110.
Wherein, the ion of injection can be any ion that can generate defect, can be by existing ion implantation apparatus
Arbitrary injection ion is provided, injection ion can be for example N, P, As, B etc..
Further, magnetoresistive tunnel junction 110 can also include: pinning layer 108 on second magnetosphere 106 and
Protective layer 109 on the pinning layer 108.
All the embodiments in this specification are described in a progressive manner, same and similar between each embodiment
Part may refer to each other, and each embodiment focuses on the differences from other embodiments.Especially for device
For the embodiment of part structure, since it is substantially similar to the method embodiment, so describe fairly simple, related place ginseng
See the part explanation of embodiment of the method.
The above is only a preferred embodiment of the present invention, although the present invention has been disclosed in the preferred embodiments as above, so
And it is not intended to limit the invention.Anyone skilled in the art is not departing from technical solution of the present invention ambit
Under, many possible changes and modifications all are made to technical solution of the present invention using the methods and technical content of the disclosure above,
Or equivalent example modified to equivalent change.Therefore, anything that does not depart from the technical scheme of the invention, according to the present invention
Technical spirit any simple modification, equivalent variation and modification made to the above embodiment, still fall within the technology of the present invention
In the range of scheme protection.
Claims (10)
1. a kind of manufacturing method of spin(-)orbit square magnetic random access memory characterized by comprising
Substrate is provided；
The magnetoresistive tunnel junction on Quantum geometrical phase layer and the Quantum geometrical phase layer is sequentially formed over the substrate,
The magnetoresistive tunnel junction includes the first magnetosphere, tunnel layer and the second magnetosphere stacked gradually from the bottom to top, first magnetic
Property layer and second magnetosphere have perpendicular magnetic anisotropy；
Wherein, existing defects in the magnetoresistive tunnel junction, the defect are generated by ion implanting, when the ion implanting, exposure
Magnetoresistive tunnel junction out, and the vertical direction of injection direction and the substrate has angle, the injection direction over the substrate
Projection with the current direction in the spin coupling layer be it is non-parallel.
2. the manufacturing method according to claim 1, which is characterized in that the projection of the injection direction over the substrate with
Current direction in the spin coupling layer is substantially vertical.
3. the manufacturing method according to claim 1, which is characterized in that the injection ion of the ion implantation technology be N,
As, Be, Ar, P or B.
4. manufacturing method described in any one of -4 according to claim 1, which is characterized in that the range of the angle be 30 ° -
60°。
5. the manufacturing method according to claim 1, which is characterized in that the step of forming the magnetoresistive tunnel junction include:
Successively carry out the growth of each material layer of magnetoresistive tunnel junction；
The patterning of each material layer of the magnetoresistive tunnel junction is carried out, to form magnetoresistive tunnel junction；
The ion implantation technology is carried out along the injection direction.
6. manufacturing method according to claim 5, which is characterized in that Quantum geometrical phase layer is formed over the substrate,
Include:
Before the growth of each material layer for successively carrying out magnetoresistive tunnel junction, Quantum geometrical phase layer is grown over the substrate
Material layer；Then,
The patterning of each material layer for carrying out the magnetoresistive tunnel junction, comprising: carry out the material of the Quantum geometrical phase layer
The patterning of each material layer of the patterning of the bed of material and the magnetoresistive tunnel junction, be respectively formed Quantum geometrical phase layer and
Magnetoresistive tunnel junction.
7. the manufacturing method according to claim 1, which is characterized in that the magnetoresistive tunnel junction further include: second magnetic
The protective layer on pinning layer and the pinning layer on property layer.
8. a kind of spin(-)orbit square magnetic random access memory characterized by comprising
Quantum geometrical phase layer；
Magnetoresistive tunnel junction on the Quantum geometrical phase layer, the magnetoresistive tunnel junction include stacking gradually from the bottom to top
The first magnetosphere, tunnel layer and the second magnetosphere, first magnetosphere and second magnetosphere have vertical respectively to different
Property；
Wherein, existing defects in the magnetoresistive tunnel junction, and the current direction magnetoresisitve tunnel in the Quantum geometrical phase layer
The defects of side is tied more than the defects of other side, the defect is generated by ion implantation technology.
9. memory according to claim 8, which is characterized in that the injection ion of the ion implantation technology be N, As,
Be, Ar, P or B.
10. memory according to claim 8, which is characterized in that the magnetoresistive tunnel junction further include: described second is magnetic
The protective layer on pinning layer and the pinning layer on layer.
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| CN110232939A (en) * | 2019-06-10 | 2019-09-13 | 中国科学院半导体研究所 | The random storage unit of laser computer heating control magnetic, memory and logical device |
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