CN109687116A - The minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band - Google Patents
The minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band Download PDFInfo
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- CN109687116A CN109687116A CN201910105110.7A CN201910105110A CN109687116A CN 109687116 A CN109687116 A CN 109687116A CN 201910105110 A CN201910105110 A CN 201910105110A CN 109687116 A CN109687116 A CN 109687116A
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- 239000002184 metal Substances 0.000 claims abstract description 172
- 229910052751 metal Inorganic materials 0.000 claims abstract description 172
- 230000003071 parasitic effect Effects 0.000 claims abstract description 78
- 230000005855 radiation Effects 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims description 122
- 239000003795 chemical substances by application Substances 0.000 claims description 31
- 238000005452 bending Methods 0.000 claims description 9
- 239000000523 sample Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 230000024241 parasitism Effects 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 11
- 230000005684 electric field Effects 0.000 abstract description 5
- 150000002739 metals Chemical class 0.000 abstract description 3
- 230000005404 monopole Effects 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 208000026817 47,XYY syndrome Diseases 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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Abstract
The present invention discloses a kind of minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band, is formed by successively stacking the medium cavity layer for being affixed setting, parasitic layer, articulamentum, radiating layer and feed layer from top to bottom.Fed by two point and realize circular polarisation, feeding network using one-to-two amplitude is equal, 90 ° of phase phase difference of Wilkinson power divider.The radiation of grounded metal pillar is similar to monopole antenna, and antenna pattern is omnidirectional, the half-power beam width of metal-loaded pillar broadening microstrip antenna.Q-RING generates the electric field of horizontal polarization, and to the additional vertical polarization electric field of budget metals pillar, while expanding beam angle, the axis for improving antenna compares performance.By introducing the stepped construction of parasitic patch, the impedance bandwidth of antenna is expanded, circular arc chamfering is carried out to parasitic patch, further improves the axial ratio bandwidth of antenna and 3dB axis compares beam angle.
Description
Technical field
The present invention relates to antenna technical fields, and in particular to a kind of minimized wide-band broad beam circularly polarization microstrip of C-band
Antenna.
Background technique
In recent years, with the rapid development of mechanics of communication, the circular polarization microstrip antenna of minimized wide-band broad beam is by perhaps
The favor of more researchers.This is because microstrip antenna has the advantages that a series of protrusions such as small in size, light-weight and at low cost.Circle
Polarization has the interference performances such as very strong anti-misty rain, anti-multipath, can satisfy antenna and knows in radar, remote sensing, satellite communication, radio frequency
Not, the strict demand of the radio arts various aspects such as electronic countermeasure.Wide frequency band can provide abundant frequency spectrum money for communication system
Source, wide wave beam can then cover very wide spatial dimension, so that the gain of low elevation angle region is very significantly improved.At big angle
The antenna with broad beam characteristic is usually required as array element in degree scanning phased array.
In general, the 3dB beam angle of microstrip antenna only has 80 ° or so, this, which is difficult to meet, some needs wide-angle wave beam to cover
Requirement of lid scene, such as trailer-mounted radar, base station communication, satellite communication etc..Currently, both at home and abroad to wide beam circular polarized antenna
Research achieves a series of achievement.2015, Nasimuddin et al. was in IEEE Transactions on Antennas
An entitled " Awide-beam circularly polarized asymmetric- is delivered on and Propagation
The paper of microstrip antenna ", text in devise a microstrip antenna, on four angles of rectangular radiation patch respectively
The circular patch that radius does not wait is loaded, realizes circular polarisation.The size of the antenna is only 0.373 λ0×0.373λ0×0.016λ0,
3dB axis reaches 180 ° than beam angle, but its axial ratio bandwidth is very narrow, and only 1.5%, and also its half-power beam width does not obtain
To broadening.2016, Wen Ya Qing et al. was in IEEE International Symposium onAntennas&
Propagation has delivered paper " Low profile circularly-polarized microstripcrossed
Antenna with wide beamwidth ", the paper proposes it is a by magnetoelectricity dipole triads at broad beam circular polarisation it is micro-
Band antenna, the face E, the face H 3dB beam angle reached 134 °, 3dB axis has reached 135 °, but its work belt than beam angle
Wide very narrow, only 50MHz, relative bandwidth is only 0.88%, is difficult meet the needs of broadband connections.2017, Wei Jia etc.
People publishes thesis " Ultra Wideband on IEEE Antennasand Wireless Propagation Letters
And High GainCircularly Polarized Antenna with Double-Y-Shape Slot ", text in design
The microstrip antennas of a double Y cutler feeds, the size of the antenna are 0.47 λ0×0.47λ0×0.28λ0, impedance bandwidth is
71%, 3dB axial ratio bandwidth are 49.8%, but there is no broadenings than beam angle for the half-power beam width of antenna, 3dB axis, and
And section is higher.And notification number is " a kind of small sized wide-band broad beam disclosed in the Chinese invention patent application of CN102904009A
Circular polarization microstrip antenna ", the short-circuit patch and one point four of feeding network which is successively rotated by 90 ° by four form, it
The frequency range covered is 1.4-1.7GHz, and relative impedances bandwidth is only 100 ° or so for 19.4%, 3dB beam angle, and
And 3dB axial ratio bandwidth does not provide, and reaches the requirement of 5G communication far away.To sum up, the broadband of circular polarization microstrip antenna, width
Wave beam, small size performance are difficult to be met simultaneously.
Summary of the invention
The present invention is for existing circular polarization microstrip antenna there are working bands relatively narrow, half-power beam width and 3dB wave
Beam width is not wide enough, it is difficult to which the requirement for meeting base station communication broadband, broad beam, the minimized wide-band for providing a kind of C-band are wide
Wave beam circular polarization microstrip antenna.
To solve the above problems, the present invention is achieved by the following technical solutions:
The minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band, by medium cavity layer, parasitic layer, articulamentum, radiation
Layer and feed layer composition；Medium cavity layer, parasitic layer, articulamentum, radiating layer are successively stacked from top to bottom with feed layer and are mutually sticked
It sets, and the center line of each layer is located on same axis.
Medium cavity layer includes medium cavity layer medium substrate；Medium cavity layer medium substrate is that inner and outer ring is square
Side annular；The edge of medium cavity layer medium substrate offers several through-holes up and down, the inside of all through-holes
It is coated with metal, forms medium cavity layer metal throuth hole；These medium cavity layer metal throuth holes are in medium cavity layer medium base
The edge of plate equally regular array, and encompass square.
Parasitic layer includes parasitic agent substrate and parasitic metal patch；Parasitic agent substrate and parasitic metal patch are positive
It is rectangular；Parasitic metal patch is printed on the upper surface of parasitic agent substrate, and the center line of the two is located on same axis；It posts
The side length of raw metal patch is less than the side length of parasitic agent substrate；The edge of parasitic agent substrate offers several and passes through up and down
Logical through-hole is coated with metal on the inside of all through-holes, forms parasitic metal through-hole；These parasitic metal through-holes are situated between in parasitism
The edge of matter substrate equally regular array, and encompass square.
Radiating layer includes radiation medium substrate, radiation metal patch and metal floor；Radiation medium substrate, radiation metal patch
Piece and metal floor are square, and radiation metal patch is printed on the upper surface of parasitic agent substrate, and metal floor is printed on
The lower surface of parasitic agent substrate；The side length of radiation metal patch is less than the side length of radiation medium substrate, the side length of metal floor
Equal to the side length of radiation medium substrate；The edge of radiation medium substrate offers several through-holes up and down, Suo Youtong
It is coated with metal on the inside of hole, forms radiation metal through-hole；These radiation metal through-holes are at the edge of radiation medium substrate
Equidistant regular array, and encompass square.
Articulamentum includes becket and several metal columns；Side's annular that becket is square in inner and outer ring；It is all
Metal column is threaded through in becket, and the equally regular array on becket, and encompasses square；Medium cavity layer gold
The quantity for belonging to through-hole, parasitic metal through-hole, radiation metal through-hole and metal column is equal, and position is opposite；The upper end of metal column is successively
It is equal with the upper surface of medium cavity layer medium substrate after parasitic metal through-hole and medium cavity layer metal throuth hole；Metal
It is equal with radiation medium substrate after the lower end of column passes through radiation metal through-hole, and be in contact with the upper surface of metal wall.
Feed layer includes feed dielectric substrate, metal wall, sub-miniature A connector, Wilkinson power divider patch, isolation resistance and 2
Root feed probes；Metal wall is side's annular that inner and outer ring is square；Feed dielectric substrate is square, feed dielectric substrate
Outer edge be embedded in the inner ring of metal wall just, and the center line of the two is located on same axis；Wilkinson function point
Device patch is made of 2 metal bending curves for being printed on feed dielectric base lower surface, and the length difference of this 2 metal bending curves
Equal to λ g1/4, wherein λ g1 is medium wavelength corresponding to the effective dielectric constant of feed dielectric substrate；The both ends of isolation resistance
Be connected to this 2 metal bending curves closest to place；Sub-miniature A connector is threaded through in the one side wall of metal wall, and sub-miniature A connector
Outer conductor is connect with metal wall, and the inner conductor of metal wall is connect with the input port of Wilkinson power divider patch；2 feeds are visited
The bottom end of needle is erected respectively on 2 output ports of Wilkinson power divider patch, and the upper end of 2 feed probes passes through radiation
Medium substrate is in contact with radiation metal patch.
As an improvement, the quadrangle of the inner ring of medium cavity layer medium substrate is rounded corner.
As an improvement, the quadrangle of parasitic metal patch is rounded corner.
As an improvement, the quadrangle of the inner ring of becket is rounded corner.
As an improvement, the thickness of medium cavity layer medium substrate is greater than the thickness and radiation medium substrate of parasitic agent substrate
Thickness.
As an improvement, the side length of parasitic metal patch and the side length of radiation metal patch are respectively less than medium cavity layer medium base
The side length of plate inner ring.
As an improvement, becket is printed at the top surface edge of radiation medium substrate.
As an improvement, medium cavity layer metal throuth hole, parasitic metal through-hole, the quantity of radiation metal through-hole and metal column are equal
It is 36.
As an improvement, the lower surface of feed dielectric substrate is equal with the lower surface of metal wall.
Compared with prior art, the present invention has a characteristic that
1, fed by two point and realize circular polarisation, feeding network using one-to-two amplitude is equal, 90 ° of phase phase difference of prestige
Er Jinsen power splitter.The radiation of grounded metal pillar is similar to monopole antenna, and antenna pattern is omnidirectional, load gold
Belong to the half-power beam width of pillar broadening microstrip antenna.Q-RING generates the electric field of horizontal polarization, to budget metals pillar
Additional vertical polarization electric field, while expanding beam angle, the axis for improving antenna compares performance.
2, by introducing the stepped construction of parasitic patch, the impedance bandwidth of antenna is expanded, parasitic patch is carried out arc-shaped
Chamfering further improves the axial ratio bandwidth of antenna and 3dB axis compares beam angle.
3, using the medium substrate of high dielectric constant, the miniaturization of antenna is realized.
4, the impedance bandwidth of the antenna is 3.79~6.82GHz, and relative impedances bandwidth is that 62.8%, 3dB axial ratio bandwidth is
4.02~5.85Hz, opposite 3dB axial ratio bandwidth are 37.3%, in the frequency range of 4~5.8GHz, the half-power beam of antenna
Width reaches 110 °, and in the frequency range of 4.3~5.5GHz, 3dB axis is greater than 146 ° than beam angle, wherein in 4.9GHz
208 ° are reached.
5, antenna has lesser volume, having a size of 0.41 λ0×0.41λ0×0.17λ0, suitable for wide-angle surface sweeping
The fields such as phased array, the base station communication covered all around and satellite communication.
Detailed description of the invention
Fig. 1 is the structure expanded schematic diagram of the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band.
Fig. 2 is the structural schematic diagram of the medium cavity layer of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna.
Fig. 3 is the structural schematic diagram of the parasitic layer of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna.
Fig. 4 is the structural schematic diagram of the articulamentum of C sections of minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antennas.
Fig. 5 is the structural schematic diagram of the radiating layer of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna.
Fig. 6 is the structural schematic diagram of the feed layer of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna.
Fig. 7 is the S of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna11Curve.
Fig. 8 is axis ratio (AR) curve of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna.
Fig. 9 is actual gain (Realizedgain) curve of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna.
Figure 10 is directional diagram of the C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna in f=4.3GHz.
Figure 11 is directional diagram of the C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna in f=4.5GHz.
Figure 12 is directional diagram of the C sections of minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antennas in f=4.9GHz.
Figure 13 is directional diagram of the C sections of minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antennas in f=5.5GHz.
Figure 14 is that axis ratio (AR) wave beam of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna in f=4.3GHz is wide
It writes music line.
Figure 15 is that axis ratio (AR) wave beam of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna in f=4.5GHz is wide
It writes music line.
Figure 16 is that axis ratio (AR) wave beam of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna in f=4.9GHz is wide
It writes music line.
Figure 17 is that axis ratio (AR) wave beam of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna in f=5.5GHz is wide
It writes music line.
Figure label:
1, medium cavity layer；1-1, medium cavity medium substrate；1-2 metal throuth hole；
2, parasitic layer；2-1, parasitic agent substrate；2-2, metal throuth hole；2-3, parasitic metal patch；
3, articulamentum；3-1, becket；3-2, metal column；
4, radiating layer；4-1, radiation medium substrate；4-2, metal throuth hole；4-3, radiation metal patch；
5, feed layer；5-1, feed probes；5-2, metal wall；5-3, Wilkinson power divider patch；5-4, isolation resistance；
5-5, sub-miniature A connector；5-6, feed dielectric substrate.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific example, and referring to attached
Figure, the present invention is described in more detail.It should be noted that the direction term mentioned in example, for example, "upper", "lower",
" in ", " left side " " right side ", "front", "rear" etc., be only the direction with reference to attached drawing.Therefore, the direction used is intended merely to explanation
For limiting the scope of the invention.
Referring to Fig. 1, a kind of minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band, by medium cavity layer 1, parasitism
Layer 2, articulamentum 3, radiating layer 4 and feed layer 5 form.Medium cavity layer 1, parasitic layer 2, articulamentum 3, radiating layer 4 and feed layer 5
It successively stacks from top to bottom and is affixed gapless setting, and the center line of each layer is located on same axis.
Referring to fig. 2, medium cavity layer 1 includes medium cavity layer medium substrate 1-1.Medium cavity layer medium substrate 1-1 is
Side's annular that inner and outer ring is square.Medium cavity layer medium substrate 1-1 inside opening size has the impedance matching of antenna
Very big influence, by optimizing, in the present embodiment, the outer ring side length W0 of medium cavity layer medium substrate 1-1 is 25mm, dielectric cavity
The inner ring side length W of body layer medium substrate 1-1 is 14.5mm.The quadrangle of the inner ring of medium cavity layer medium substrate 1-1 carries out 2mm
Circular arc chamfering processing, with improve antenna axis ratio characteristic, reduce antenna size.The side of medium cavity layer medium substrate 1-1
Several through-holes up and down are offered at edge, the inside of the through-hole is coated with metal, forms medium cavity layer metal throuth hole
1-2.These medium cavity layer metal throuth holes 1-2 equally regular array, and encompass square.Loaded medium cavity layer 1
Effectively improve the impedance bandwidth of antenna.
Referring to Fig. 3, parasitic layer 2 includes parasitic agent substrate 2-1 and parasitic metal patch 2-3.Parasitic metal patch 2-3 is produced
Raw additional resonance point, can effectively improve the impedance bandwidth of antenna.Parasitic metal patch 2-3 is printed on parasitic agent substrate 2-
1 upper surface, and the center line of the two is located on same axis.Parasitic agent substrate 2-1 and parasitic metal patch 2-3 are
Square, and the side length Wj of parasitic metal patch 2-3 is less than the side length W0 of parasitic agent substrate 2-1, and is less than medium cavity layer
The inner ring institute long W of surrounding edge of medium substrate 1-1.In the present embodiment, the side length W0 of parasitic agent substrate 2-1 is 25mm, parasitic gold
The side length Wj for belonging to patch 2-3 is 13.5mm.The quadrangle of parasitic metal patch 2-3 carries out the circular arc chamfering processing of 2mm, to improve
The axis of antenna compares performance.The edge of parasitic agent substrate 2-1 offers several through-holes up and down, the inside of the through-hole
Coated with metal, parasitic metal through-hole 2-2 is formed.These parasitic metal through-holes 2-2 equally regular array, and encompass just
It is rectangular.
Referring to fig. 4, articulamentum 3 includes becket 3-1 and several metal columns 3-2.Becket 3-1 is positive in inner and outer ring
Rectangular side's annular.In the present embodiment, the outer ring side length W0 of becket 3-1 is 25mm, and inner ring side length Wh is 20mm.Metal shape
Inner ring quadrangle carry out radius be 1mm circular arc chamfering.All metal column 3-2 are threaded through in becket 3-1, and in gold
Belong to equally regular array on ring 3-1, and encompasses square.In actual production process, becket 3-1 is printed on spoke
Penetrate the upper surface of medium substrate 4-1.The radiation of metal column 3-2 is similar to monopole antenna, and the face E of antenna pattern is in 8 words
Shape, the face H is rounded, and the load of metal column 3-2 can expand the half-power beam width of antenna, while in horizontal plane metal-loaded ring
3-1 can the additional vertical component of budget metals column 3-2 vector electric field, improve the axis ratio characteristic of antenna and expand beam angle.
Referring to Fig. 5, radiating layer 4 includes radiation medium substrate 4-1, radiation metal patch 4-3 and metal floor.Radiation medium
Substrate 4-1, radiation metal patch 4-3 and metal floor are square.Radiation metal patch 4-3 is printed on parasitic agent substrate
The upper surface of 2-1, metal floor are printed on the lower surface of parasitic agent substrate 2-1.The side length Wf of radiation metal patch 4-3 is less than
The side length W0 of radiation medium substrate 4-1, and it is less than the inner ring institute long W of surrounding edge of medium cavity layer medium substrate 1-1.In the present embodiment
In, the side length W0 of radiation medium substrate 4-1 is 25mm, and the side length Wf of radiation metal patch 4-3 is 13.5mm.The side of metal floor
The long side length for being equal to radiation medium substrate 4-1.The edge of radiation medium substrate 4-1 offers several up and down logical
The inside in hole, the through-hole is coated with metal, forms radiation metal through-hole 4-2.These radiation metal through-holes 4-2 is equally regular
Arrangement, and encompass square.
Referring to Fig. 6, feed layer 5 includes feed dielectric substrate 5-6, metal wall 5-2, sub-miniature A connector 5-5, Wilkinson function point
Device patch 5-3, isolation resistance 5-4 and 2 feed probes 5-1.Metal wall 5-2 is side's annular that inner and outer ring is square.Gold
The upper surface for belonging to wall 5-2 is connect with the metal floor of radiating layer 4.The outer side length Wk of metal wall 5-2 is less than medium cavity layer Jie
Matter substrate 1-1, parasitic agent substrate 2-1, the outer side length W0 for connecting medium substrate and radiation medium substrate 4-1.In the present embodiment
In, the outer side length Wk of metal wall 5-2 is 21mm, and interior side length Wq is 16mm, with a thickness of 2.5mm.Feed dielectric substrate 5-6 is pros
Shape, feed dielectric substrate 5-6 are embedded in the inner ring of metal wall 5-2.Particularly, the lower surface of feed dielectric substrate 5-6 and gold
The lower surface for belonging to wall 5-2 is equal, and the center line of metal wall 5-2 and feed dielectric substrate 5-6 are located on same axis.Feed is situated between
The side length of matter substrate 5-6 and the inner ring side length of metal wall 5-2 are equal.In the present embodiment, the side length Wq of feed dielectric substrate 5-6
For 16mm.Wilkinson power divider patch 5-3 is made of 2 metal bending curves for being printed on the lower surface feed dielectric substrate 5-6.
The difference of this 2 metal bending lengths of a curve is equal to λ g1/4, and wherein λ g1 is right for the effective dielectric constant of feed dielectric substrate 5-6
The medium wavelength answered.The both ends of isolation resistance 5-4 be connected to this 2 metal bending curves closest to place.Sub-miniature A connector 5-5
It is threaded through in the one side wall of metal wall 5-2, wherein the outer conductor of sub-miniature A connector 5-5 is connect with metal wall 5-2, sub-miniature A connector 5-5's
Inner conductor is connected with the input port of Wilkinson power divider patch 5-3.The lower end of 2 feed probes 5-1 is erected respectively in prestige
On 2 output ports of Er Jinsen power splitter patch 5-3.The upper end of 2 feed probes 5-1 both passes through radiation medium substrate 4-1,
And it is in contact with radiation metal patch 4-3.The amplitude of the output port of Wilkinson power divider patch 5-3 is equal in magnitude, phase
90 ° of difference.
The thickness of medium cavity layer medium substrate 1-1 had not only been greater than the thickness of parasitic agent substrate 2-1, but also was greater than radiation medium
The thickness of substrate 4-1；And the thickness and radiation medium base of the thickness of medium cavity layer medium substrate 1-1, parasitic agent substrate 2-1
The sum of thickness of plate 4-1 is equal to λ g2/4, and wherein λ g2 is medium cavity layer medium substrate 1-1, parasitic agent substrate 2-1 and radiation
Medium wavelength corresponding to the effective dielectric constant of medium substrate 4-1.In the present embodiment, medium cavity layer medium substrate 1-1
It is all made of glass-epoxy (FR-4) material with radiation medium substrate 4-1, dielectric constant is 4.4, and loss angle is just
Cut is 0.02.The thickness of medium cavity layer medium substrate 1-1 is respectively 4mm, radiation medium substrate 4-1 with a thickness of 1.6mm.
Parasitic agent substrate 2-1 use polytetrafluoroethylene (PTFE) (F4B265) material, dielectric constant 2.65, loss angle tangent 0.001,
With a thickness of 2mm.Feed dielectric substrate 5-6 uses polytetrafluoroethylene (PTFE) (F4B350) material, dielectric constant 3.5, loss angle tangent
It is 0.001, with a thickness of 2.5mm.
The number of medium cavity layer metal throuth hole 1-2, parasitic metal through-hole 2-2, radiation metal through-hole 4-2 and metal column 3-2
Measure equal, position is opposite, to ensure that the upper end of metal column 3-2 can pass through medium cavity layer metal throuth hole 1-2 and parasitic metal
Through-hole 2-2, and it is equal with the upper surface of medium cavity layer medium substrate 1-1；The lower end of metal column 3-2 can pass through radiation metal
Through-hole 4-2, and it is equal with radiation medium substrate 4-1, and be in contact with the upper surface of metal wall 5-2.In the present embodiment, each layer
Metal throuth hole is square to be arranged at each side 0.8mm of locating medium substrate, and 9 radiuses of equidistantly arranging in each edge are
0.4mm is spaced dsFor the metal throuth hole of 2.5mm.
Fig. 7-17 is that the S parameter of C-band minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of the embodiment of the present invention is bent respectively
Line, axis ratio (AR) curve, actual gain (Realized gain) curve, each frequency point directional diagram and each frequency point axis ratio (AR) wave
Beam width curve.The impedance bandwidth of the antenna is 3.79~6.82GHz, and relative impedances bandwidth is that 62.8%, 3dB axial ratio bandwidth is
4.02~5.85GHz, opposite 3dB axial ratio bandwidth are 37.3%, in the frequency range of 4~5.8GHz, the half-power wave of antenna
Beam width reaches 110 °, while maximum gain reaches 4.8dBi；In the frequency range of 4.3~5.5GHz, 3dB axis is wider than wave beam
Degree is greater than 146 °, wherein having reached 208 ° in 4.9GHz.Antenna has lesser volume, compact-sized, is easily installed.Entirely
The size of antenna is 0.41 λ0×0.41λ0×0.17λ0, wherein λ0It indicates the corresponding wavelength of centre frequency in vacuum, is suitable for big
The fields such as the phased array of angle surface sweeping, the base station communication covered all around and satellite communication.
It should be noted that although the above embodiment of the present invention be it is illustrative, this be not be to the present invention
Limitation, therefore the invention is not limited in above-mentioned specific embodiment.Without departing from the principles of the present invention, all
The other embodiment that those skilled in the art obtain under the inspiration of the present invention is accordingly to be regarded as within protection of the invention.
Claims (9)
- The minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of 1.C wave band, characterized in that by medium cavity layer (1), parasitic layer (2), articulamentum (3), radiating layer (4) and feed layer (5) composition；Medium cavity layer (1), parasitic layer (2), articulamentum (3), radiation Layer (4) and feed layer (5) successively stack be affixed setting from top to bottom, and the center line of each layer is located on same axis；Medium cavity layer (1) includes medium cavity layer medium substrate (1-1)；Medium cavity layer medium substrate (1-1) is inner and outer ring The side's annular being square；The edge of medium cavity layer medium substrate (1-1) offers several through-holes up and down, It is coated with metal on the inside of all through-holes, is formed medium cavity layer metal throuth hole (1-2)；These medium cavity layer metal throuth holes (1-2) encompasses square in the edge of medium cavity layer medium substrate (1-1) equally regular array；Parasitic layer (2) includes parasitic agent substrate (2-1) and parasitic metal patch (2-3)；Parasitic agent substrate (2-1) and parasitism Metal patch (2-3) is square；Parasitic metal patch (2-3) is printed on the upper surface of parasitic agent substrate (2-1), and two The center line of person is located on same axis；The side length of parasitic metal patch (2-3) is less than the side of parasitic agent substrate (2-1) It is long；The edge of parasitic agent substrate (2-1) offers several through-holes up and down, is coated on the inside of all through-holes Metal is formed parasitic metal through-hole (2-2)；These parasitic metal through-holes (2-2) the edge of parasitic agent substrate (2-1) in etc. Spacing regular array, and encompass square；Radiating layer (4) includes radiation medium substrate (4-1), radiation metal patch (4-3) and metal floor；Radiation medium substrate (4-1), radiation metal patch (4-3) and metal floor are square, and radiation metal patch (4-3) is printed on parasitic agent base The upper surface of plate (2-1), metal floor are printed on the lower surface of parasitic agent substrate (2-1)；The side of radiation metal patch (4-3) The long side length for being less than radiation medium substrate (4-1), the side length of metal floor are equal to the side length of radiation medium substrate (4-1)；Radiation The edge of medium substrate (4-1) offers several through-holes up and down, is coated with metal, shape on the inside of all through-holes At radiation metal through-hole (4-2)；These radiation metal through-holes (4-2) are equally advised at the edge of radiation medium substrate (4-1) It then arranges, and encompasses square；Articulamentum (3) includes becket (3-1) and several metal columns (3-2)；Becket (3-1) is square in inner and outer ring Side annular；All metal columns (3-2) are threaded through in becket (3-1), and the equally rule row on becket (3-1) Cloth, and encompass square；Medium cavity layer metal throuth hole (1-2), parasitic metal through-hole (2-2), radiation metal through-hole (4-2) Equal with the quantity of metal column (3-2), position is opposite；The upper end of metal column (3-2) sequentially pass through parasitic metal through-hole (2-2) and It is equal with the upper surface of medium cavity layer medium substrate (1-1) after medium cavity layer metal throuth hole (1-2)；Metal column (3-2) It is equal with radiation medium substrate (4-1) after lower end passes through radiation metal through-hole (4-2), and the upper surface phase with metal wall (5-2) Contact；Feed layer (5) includes feed dielectric substrate (5-6), metal wall (5-2), sub-miniature A connector (5-5), Wilkinson power divider patch Piece (5-3), isolation resistance (5-4) and 2 feed probes (5-1)；Metal wall (5-2) is the Fang Huan that inner and outer ring is square Shape；Feed dielectric substrate (5-6) is square, and the outer edge of feed dielectric substrate (5-6) is embedded in metal wall (5-2) just In inner ring, and the center line of the two is located on same axis；Wilkinson power divider patch (5-3) is by being printed on feed dielectric 2 metal bending curves of the lower surface substrate (5-6) are constituted, and the length difference of this 2 metal bending curves is equal to λ g1/4, wherein λ g1 Medium wavelength medium wavelength corresponding to effective dielectric constant for feed dielectric substrate (5-6)；The both ends of isolation resistance (5-4) Be connected to this 2 metal bending curves closest to place；Sub-miniature A connector (5-5) is threaded through in the one side wall of metal wall (5-2), And the outer conductor of sub-miniature A connector (5-5) is connect with metal wall (5-2), the inner conductor and Wilkinson power divider of metal wall (5-2) paste The input port of piece (5-3) connects；The bottom end of 2 feed probes (5-1) is erected respectively at Wilkinson power divider patch (5-3) 2 output ports on, the upper ends of 2 feed probes (5-1) passes through radiation medium substrate (4-1), with radiation metal patch (4- 3) it is in contact.
- 2. the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band according to claim 1, characterized in that medium The quadrangle of the inner ring of cavity layer medium substrate (1-1) is rounded corner.
- 3. the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band according to claim 1, characterized in that parasitic The quadrangle of metal patch (2-3) is rounded corner.
- 4. the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band according to claim 1, characterized in that metal The quadrangle of the inner ring of ring (3-1) is rounded corner.
- 5. the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band according to claim 1, characterized in that medium The thickness of the thickness of cavity layer medium substrate (1-1) thickness greater than parasitic agent substrate (2-1) and radiation medium substrate (4-1) Degree.
- 6. the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band according to claim 1, characterized in that parasitic The side length of metal patch (2-3) and the side length of radiation metal patch (4-3) are respectively less than medium cavity layer medium substrate (1-1) inner ring Side length.
- 7. the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band according to claim 1, characterized in that metal Ring (3-1) is printed at the top surface edge of radiation medium substrate (4-1).
- 8. the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band according to claim 1, characterized in that medium Cavity layer metal throuth hole (1-2), parasitic metal through-hole (2-2), the quantity of radiation metal through-hole (4-2) and metal column (3-2) are equal It is 36.
- 9. the minimized wide-band wide-beam circularly-polarizedmicrostrip microstrip antenna of C-band according to claim 1, characterized in that feed The lower surface of medium substrate (5-6) is equal with the lower surface of metal wall (5-2).
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| CN110838614A (en) * | 2019-11-21 | 2020-02-25 | 西南交通大学 | Low-profile dual-polarization wide-angle scanning flat phased array antenna |
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| WO2021104228A1 (en) * | 2019-11-29 | 2021-06-03 | 维沃移动通信有限公司 | Antenna unit and electronic device |
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| CN114374092A (en) * | 2021-12-23 | 2022-04-19 | 西安电子科技大学 | Broadband low-profile miniaturized AMC cavity monopole antenna |
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