CN109686692A - The manufacturing method thereof of manual pad pasting edge oxide layer - Google Patents
The manufacturing method thereof of manual pad pasting edge oxide layer Download PDFInfo
- Publication number
- CN109686692A CN109686692A CN201711018021.6A CN201711018021A CN109686692A CN 109686692 A CN109686692 A CN 109686692A CN 201711018021 A CN201711018021 A CN 201711018021A CN 109686692 A CN109686692 A CN 109686692A
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- China
- Prior art keywords
- oxide layer
- chip
- basket
- manufacturing
- edge
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Abstract
The present invention provides a kind of manufacturing method thereof of manual pad pasting edge oxide layer, suitable for the technique for removing Waffer edge oxide layer.Manufacturing method thereof includes the following steps: vertically to take out chip from special basket using sucking pen, is placed on jig；Basket film is extracted, by the pilot pin on the location hole alignment jig of blue film, flattens basket film with roller bearing；Confirm that blue film is flat, chip is placed in special basket using sucking pen by edge bubble-free；The removal of beginning edge oxide layer；The chip that oxide layer removal in edge is completed is transferred to cleaning special basket, impregnates in pharmacy slot in order, so that blue film is fallen off, be after the completion spin-dried for chip.
Description
Technical field
The invention relates to a kind of manufacturing method thereofs, and in particular to can operate with the processing procedure of removal Waffer edge oxide layer
Method.
Background technique
In the process of global IT application and economic globalization, using communication industry, calculator industry, network industry, household electrical appliances industry as generation
The information technology of table, is developed rapidly, and information industry has become the largest industrial sector of each developed country.Semiconductor
Industry, especially integrated circuit industry are basis and the core of information industry, are the informatizations of national economic modernization carriage
Guide and pillar industry are transformation and the core technology semi-conductor industry for promoting conventional industries and numerous new high-tech industries
Main matter basis is semiconductor material.Semiconductor material manufacturing technology is constantly progressive, and has pushed ultra-large, ultrahigh speed collection
At the rapid development of circuit, the more new era of hyundai electronics calculator is brought.Semiconductor silicon material is important semiconductor material
Material, dosage account for about 95% or more of the total dosage of semiconductor material.Semiconductor silicon material includes: policrystalline silicon, silicon single crystal, silicon single
Piece, silicon epitaxial wafer, amorphous silicon and microcrystal silicon, porous silicon and silica-base material.Silicon materials have become manufacture modem semi-conductor devices
Indispensable important basic material.
The chip that semiconductor technology is produced can be widely used in above-mentioned various application fields, and the yield of chip can be said
It is the quality for directly determining end product, therefore, all circles put into numerous studies on the material and production method of chip
To ensure its quality.No matter it is the chip of which kind of application field, multiple tracks processing technology must be passed through, for example, wafer cutting, quarter
The programs such as erosion, surface treatment, encapsulation, IC test, could obtain the electronic building brick or photoelectric subassembly of practical application.Above-mentioned various
In the technique for handling chip, chip often will receive the different external force of degree.In general, various functional structures are logical on chip
The standing chip that is placed in has on the major surfaces of maximum area, and each structure can often cause the defect on material on chip,
And it is easy generating the phenomenon that stress is concentrated in these defects.When suffered external force gradually increases, answering on these regions
Power concentration phenomenon can more acutely.Due to current wafer material be all using brittle material, for example, Silicon Wafer, thus on
Stress concentration phenomenon is stated to be easy so that generating slight crack at wafer stress concentration even results in wafer breakage, and then reduces wafer yield
Its production cost is improved simultaneously.
Summary of the invention
The present invention provides a kind of manufacturing method thereof of manual pad pasting edge oxide layer, can be in removal Waffer edge oxide layer
Process among, protection chip need to retain the region of oxidation tunic, meet the different of different clients and require, improve the additional of product
Value.
A kind of manufacturing method thereof for manual pad pasting edge oxide layer that the embodiment of the present invention is proposed is suitable for removal chip
Edge oxygen
The technique for changing layer, which is characterized in that the manufacturing method thereof includes:
(a) vertically chip is taken out using sucking pen from special basket, is placed on jig；
(b) basket film is extracted, by the pilot pin on the location hole alignment jig of blue film, flattens basket film with roller bearing；
(c) confirm that blue film is flat, chip is placed in special basket using sucking pen by edge bubble-free；
(d) beginning edge oxide layer removes；
(e) chip that oxide layer removal in edge is completed is transferred to cleaning special basket, impregnates in pharmacy slot in order, makes indigo plant
Film falls off, and is after the completion spin-dried for chip.
In one embodiment of this invention, make chip flat mouth downward with the rotation of rotating side device before every basket pad pasting.
In one embodiment of this invention, when chip is converted, oxide layer film surface without exception upward, and must not have chip insert tiltedly,
The situation of lamination, fragmentation；If chip is discontented with a basket, chip must be put on special basket.
In one embodiment of this invention, lateral, longitudinal with roller bearing by the pilot pin on the location hole alignment jig of blue film
Flatten basket film；
In one embodiment of this invention, when basket film being bonded with chip, it is to be ensured that basket film is flat, and Waffer edge is without gas
Bubble.
In one embodiment of this invention, chip gas phase edge oxide layer removes, and need to check board ceramic disk temperature, pressure
Within the specified scope whether power, CDA pneumatics, hydrofluoric acid flow and wind speed.
In one embodiment of this invention, chip impregnates 280sec in rinse bath, and QDR cleans 280sec, is spin-dried for
280sec, so that wafer basket film falls off.
Based on above-mentioned, a kind of manufacturing method thereof of manual pad pasting edge oxide layer, passes through provided by the embodiment of the present invention
Basket film is sticked to back surface of the wafer, protection is in the oxide layer of back surface of the wafer growth.Then, during pasting basket film, pass through
Roller bearing flattens to ensure that basket film is flat, Waffer edge bubble-free.Can wafer surface oxygen further be removed using gas phase etching
Change layer.Therefore, the manufacturing method thereof of manual pad pasting edge oxide layer can protect chip that need to retain the region of oxidation tunic, meet not
Requirement with client to chip improves value-added content of product.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate institute's accompanying drawings
It is described in detail below.
Detailed description of the invention
Fig. 1 show the step of manufacturing method thereof of the manual pad pasting edge oxide layer of a specific embodiment according to the present invention stream
Cheng Tu.
Fig. 2 show the schematic diagram of 5 points of edge oxide layer width measurements.
Specific embodiment
With reference to the accompanying drawing to the specific embodiment party of the manufacturing method thereof of manual pad pasting edge oxide layer provided by the invention
Formula elaborates.
With detailed reference to exemplary embodiment of the invention, illustrate the example of the exemplary embodiment in the accompanying drawings.
In addition, all possible places, represent same or like part using component/component of identical label in schema and embodiment.
In general, among the fusion process of polysilicon crystal growing technology, with unmelted SiClx melt height change (also
That is silicon
The present invention provides a kind of manufacturing method thereof of manual pad pasting edge oxide layer, can be in removal Waffer edge oxide layer
Process among, protection chip need to retain the region of oxidation tunic, meet the different of different clients and require, improve the additional of product
Value.
A kind of manufacturing method thereof for manual pad pasting edge oxide layer that the embodiment of the present invention is proposed is suitable for removal chip
The technique of edge oxide layer, which is characterized in that the manufacturing method thereof includes:
(a) vertically chip is taken out using sucking pen from special basket, is placed on jig；
(b) basket film is extracted, by the pilot pin on the location hole alignment jig of blue film, flattens basket film with roller bearing；
(c) confirm that blue film is flat, chip is placed in special basket using sucking pen by edge bubble-free；
(d) beginning edge oxide layer removes；
(e) chip that oxide layer removal in edge is completed is transferred to cleaning special basket, impregnates in pharmacy slot in order, makes indigo plant
Film falls off, and is after the completion spin-dried for chip.
In one embodiment of the invention, make chip flat mouth downward with the rotation of rotating side device before every basket pad pasting.
In one embodiment of the invention, when chip is converted, oxide layer film surface without exception upward, and must not have chip insert tiltedly,
The situation of lamination, fragmentation；If chip is discontented with a basket, chip must be put on special basket.
In one embodiment of the invention, when needing to pick and place chip during crime, it is necessary to use sucking pen；It is normal when taking piece
Wafer basket takes piece since H-bar, forbids carrying out that piece is taken to be operated among chip.
It is lateral, longitudinal with roller bearing by the pilot pin on the location hole alignment jig of blue film in one embodiment of the invention
Flatten basket film；When basket film is bonded with chip, it is to be ensured that basket film is flat, Waffer edge bubble-free.
In one embodiment of the invention, Waffer edge width is reserved for customer requirement, using chamfering mirror to chip
Five points measure (Fig. 2), and measurement width is accurate to 0.1mm.
In one embodiment of the invention, 1.0mm, single-wafer range five are less than or equal to for Waffer edge narrow side width
Point max-min is less than or equal to 0.3mm；1.0mm, five point max-min of single-wafer range are greater than for Waffer edge broadside width
Less than or equal to 0.5mm.
In one embodiment of told invention, in conclusion a kind of manual pad pasting edge provided by the embodiment of the present invention is gone
The manufacturing method thereof of oxide layer, by sticking basket film to back surface of the wafer, protection is in the oxide layer of back surface of the wafer growth.Then,
During pasting basket film, ensure that basket film is flat by roller bearing pressing, Waffer edge bubble-free.Gas can further be used
Mutually etching removal wafer surface oxide layer.Therefore, the manufacturing method thereof of manual pad pasting edge oxide layer can protect chip to need to retain
The region for aoxidizing tunic meets requirement of the different clients to chip, improves value-added content of product.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (8)
1. a kind of manufacturing method thereof of manual pad pasting edge oxide layer, special suitable for removing the technique of Waffer edge oxide layer
Sign is that the manufacturing method thereof includes:
(a) chip is taken out using sucking pen from wafer basket, is placed on jig；
(b) basket film is extracted, the pilot pin on the location hole alignment jig of blue film is put down, then flatten basket film with roller bearing naturally；
(c) confirm edge bubble-free, chip is picked up using sucking pen, is put back in wafer basket；
(d) beginning edge oxide layer removes；
(e) chip that oxide layer removal in edge is completed is transferred to demoulding station, impregnates in dipper, blue film is made to fall off naturally, complete
Chip is spin-dried for after.
2. the manufacturing method thereof of manual pad pasting edge oxide layer according to claim 1, which is characterized in that the chip from
Wafer basket, which takes out, need to use sucking pen, need to take out using sucking pen and vertically chip, be placed on pad pasting localization tool.
3. the manufacturing method thereof of manual pad pasting edge oxide layer according to claim 1, which is characterized in that the indigo plant film
Location hole is aligned with the pilot pin of jig, with roller bearing transverse direction, longitudinal pressing basket film.
4. the manufacturing method thereof of manual pad pasting edge oxide layer according to claim 1, which is characterized in that in the pad pasting
In the process, the basket film is bonded with chip, and basket film is flat, Waffer edge bubble-free.
5. the manufacturing method thereof of manual pad pasting edge oxide layer according to claim 1, which is characterized in that described to remove flash trimming
It is gas phase edge oxide layer removal method that edge, which aoxidizes layer method,.
6. the manufacturing method thereof of manual pad pasting edge oxide layer according to claim 6, which is characterized in that the phase edge
Oxide layer removal method step include: by the chip for having pasted basket film enter an etching gas in, in the predetermined time to institute
It states wafer surface and carries out gaseous state hydrofluoric acid etch silica, the oxidation layer region that removal is not protected by basket film.
7. the manufacturing method thereof of manual pad pasting edge oxide layer according to claim 7, which is characterized in that the etching solution
It is formed by the hydrofluoric acid matched according to a certain concentration.
8. the manufacturing method thereof of manual pad pasting edge oxide layer according to claim 4, which is characterized in that the cleaning medicine
Agent is mixed in a solvent according to a certain concentration ratio by ammonium hydroxide and hydrogen peroxide and is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711018021.6A CN109686692A (en) | 2017-10-18 | 2017-10-18 | The manufacturing method thereof of manual pad pasting edge oxide layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711018021.6A CN109686692A (en) | 2017-10-18 | 2017-10-18 | The manufacturing method thereof of manual pad pasting edge oxide layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109686692A true CN109686692A (en) | 2019-04-26 |
Family
ID=66183792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711018021.6A Pending CN109686692A (en) | 2017-10-18 | 2017-10-18 | The manufacturing method thereof of manual pad pasting edge oxide layer |
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| Country | Link |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752243A (en) * | 2008-12-08 | 2010-06-23 | 北京有色金属研究总院 | Method for removing silicon dioxide film on front chemical vapor deposition layer |
| CN102437043A (en) * | 2011-12-15 | 2012-05-02 | 天津中环领先材料技术有限公司 | Method for removing polished section crystal round edge used for IGBT (insulated gate bipolar transistor) in a row grinding manner |
| CN104966675A (en) * | 2015-07-06 | 2015-10-07 | 麦斯克电子材料有限公司 | Method of protecting part of a silicon dioxide film on the surface of a silicon chip by using a blue film |
| US20170018454A1 (en) * | 2013-11-22 | 2017-01-19 | Shanghai Simgui Tehcnology Co., Ltd. | Method for preparing low-warpage semiconductor substrate |
-
2017
- 2017-10-18 CN CN201711018021.6A patent/CN109686692A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752243A (en) * | 2008-12-08 | 2010-06-23 | 北京有色金属研究总院 | Method for removing silicon dioxide film on front chemical vapor deposition layer |
| CN102437043A (en) * | 2011-12-15 | 2012-05-02 | 天津中环领先材料技术有限公司 | Method for removing polished section crystal round edge used for IGBT (insulated gate bipolar transistor) in a row grinding manner |
| US20170018454A1 (en) * | 2013-11-22 | 2017-01-19 | Shanghai Simgui Tehcnology Co., Ltd. | Method for preparing low-warpage semiconductor substrate |
| CN104966675A (en) * | 2015-07-06 | 2015-10-07 | 麦斯克电子材料有限公司 | Method of protecting part of a silicon dioxide film on the surface of a silicon chip by using a blue film |
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Application publication date: 20190426 |