CN109680314A - The preparation method of SnS nano-tube film or SnS nano-rod film - Google Patents
The preparation method of SnS nano-tube film or SnS nano-rod film Download PDFInfo
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- CN109680314A CN109680314A CN201910142133.5A CN201910142133A CN109680314A CN 109680314 A CN109680314 A CN 109680314A CN 201910142133 A CN201910142133 A CN 201910142133A CN 109680314 A CN109680314 A CN 109680314A
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Abstract
The invention discloses a kind of the invention discloses a kind of preparation method of SnS nanometer rods/pipe film, and depositing temperature is 10~18 DEG C, and humidity is not higher than 50%.First soluble stannous salt, thio-compounds are sequentially added in deionized water or organic solvent, stir and be added citric acid or citrate, continues to stir and be added acid-conditioning solution pH, clarifies solution；It adds alkali and adjusts pH value of solution to 1.5, obtain precursor solution；Then using FTO as working electrode, platinum filament is used as to electrode, and Ag/AgCl electrode is reference electrode, it is deposited in precursor solution, solution carries out intermittent stirring in deposition process, and post-depositional SnS nano thin-film deionized water is rinsed and dried, and SnS nanometer rods/pipe film is made in control deposition voltage.Preparation method of the present invention it is environmentally protective easy to operate and can strict control operation each step, persursor material used is low in cost, prepares film and is conducive to improve its photoelectric characteristic.
Description
Technical field
The present invention relates to a kind of preparation methods of semiconductor film material, more particularly to a kind of chalcogenide compound semiconductor
The preparation method of thin-film material is applied to film photovoltaic cell light absorption layer material technical field.
Background technique
Also grow in intensity as traditional fossil energy is increasingly depleted, and to the pollution of environment, nowadays, people for
The protective awareness and sustainable development tourism pay attention to day by day of environment find a kind of renewable and clean energy resource to replace traditional fossil
The energy has become current important project.Solar energy is as a kind of inexhaustible and nontoxic and pollution-free novel
The energy is one of energy of ideals of human being.Solar energy can be converted into electric energy using photovoltaic effect, and use at present compared with
More crystal silicon battery higher costs, therefore develop cheap, environmentally friendly, the efficient solar cell material of one kind and have become to grind in recent years
Study carefully hot spot.
Chalcogenide compound semiconductive thin film is since its unique photoelectric property is in the following photoelectric device, especially efficiently low
There is good application prospect on cost thin film solar battery, thus causes the extensive concern and research interest of people.?
In numerous chalcogenide compound thin-film materials, artificial gold SnS film is wherein representative one of material.Wherein constitute
The reserves of the S and Sn element of SnS on earth are compared with horn of plenty.Since there are the vacancy Sn in SnS, it is however generally that its conductive-type
Type is in p-type.The optics direct band gap and indirect band gap width of SnS is respectively 1.2~1.5eV and 1.0~1.1eV, with sun spoke
Good Spectral matching has been penetrated, thus has been very suitable for as the light absorbing layer in solar battery.Its theoretical photoelectric conversion effect
Rate is up to 25%.It is the novel thin film photovoltaic cell absorption layer material of great potential.SnS film can use chemical vapor transportation
Method, chemical deposition and electrodeposition process etc. prepare film, and the characteristic of prepared material is also up for further improving.At these
In method, electrodeposition process has many advantages, such as that process equipment is simple, low in cost and be suitable for large area and prepare, but existing electro-deposition
Method prepares chalcogenide compound semiconductive thin film and usually requires higher temperature and vacuum equipment, and utilization rate of raw materials is low, prepares sulphur system
The higher cost of compound semiconductor film material, quality is to be improved because preparation large area SnS thin film solar cell at
This is also undesirable.
Summary of the invention
In order to solve prior art problem, it is an object of the present invention to overcome the deficiencies of the prior art, and to provide one kind
The preparation method of SnS nano-tube film or SnS nano-rod film can prepare SnS nanometer rods/pipe film of low cost, high quality,
Preparation method is easy to operate, and persursor material used is low in cost.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
The preparation method of a kind of SnS nano-tube film or SnS nano-rod film, includes the following steps:
A. depositing temperature is regulated to 10~18 DEG C first, control humidity is not higher than 50%, in this temperature and humidity condition
Under, the thio-compounds of the soluble stannous salt of 0.025~0.05mol, 0.025~0.05mol has been sequentially added 100~
It in the beaker of 200ml deionized water or organic solvent, stirs 1~2 minute, obtains mixed liquor, then continue to add into mixed liquor
Enter 0.02~0.06mol citric acid or citrate, continues stirring 2~3 minutes；It is mixed to adjust that acid is added into mixed liquor again
The pH to 0.6~0.8 for closing liquid, clarifies mixed liquor；Then alkali is added into mixed liquor, adjusts pH of mixed to 1.5, obtains electricity
Deposition precursor liquid solution；
It b. is reference electrode by Ag/AgCl electrode, in the step using platinum filament as to electrode using FTO as working electrode
It is deposited 3~10 minutes in the electro-deposition precursor solution prepared in a, control deposition voltage is -0.8V~-1.1V；It is depositing
Intermittent stirring is carried out to electro-deposition precursor solution in the process, controls 300~500 revs/min of stirring rate, it then will deposition
SnS nano thin-film deionized water afterwards is rinsed and is dried；
In the step b, when controlling under -0.8~-0.9V deposition voltage, SnS nano-tube film is made；Or work as
SnS nano-rod film is made under -1.0~-1.1V deposition voltage in control.
As currently preferred technical solution, in the step a, soluble stannous salt uses stannous chloride, sulphur
The hydrate of any one salt or salt in sour stannous and stannous acetate.
As currently preferred technical solution, in the step a, thio-compounds is using sodium thiosulfate, thio
The hydrate of any one salt or salt in acetamide and thiocarbamide.
As currently preferred technical solution, in the step a, when adjusting mixed liquor pH value, the acid of addition
Using sulfuric acid, acetic acid or hydrochloric acid.
As currently preferred technical solution, in the step a, when adjusting mixed liquor pH value, the alkali of addition
Using NaOH, ammonium hydroxide or KOH.
As currently preferred technical solution, in the step a, the citrate uses trisodium citrate or lemon
Lemon acid potassium.
As currently preferred technical solution, in the step a, the organic solvent is using in alcohol and acetone
The mixture of any one or the two.
As currently preferred technical solution, in the step b, control depositing temperature is 10~18 DEG C, is controlled wet
Degree is not higher than 50%, under the conditions of this temperature and humidity, carries out electro-deposition and prepares SnS nano thin-film.
As currently preferred technical solution, in the step b, during the deposition process to electro-deposition precursor solution
Intermittent stirring is carried out, interval time is no more than 250s.
The present invention compared with prior art, has following obvious prominent substantive distinguishing features and remarkable advantage:
1. it is 10~18 degrees Celsius that the method for the present invention, which requires depositing temperature, humidity is lower than 50%, and process conditions are mild, SnS
Nanometer rods/pipe film preparation method is simple, experiment condition can strict control, persursor material used is low in cost, is suitble to big
Large-scale production, preparation process are environmentally protective；
It can be to prepare high performance thin film solar energy 2. the film of the method for the present invention preparation is conducive to improve electronic transmission performance
Battery device provides certain help.
3. the method for the present invention SnS nanometer rods/pipe processed in FTO Conducting Glass does not need expensive vacuum equipment,
Not needing higher reaction temperature can be obtained the controllable SnS of stoichiometric ratio, and the utilization rate of raw material is very high, this is for grinding
Hair large area SnS thin film solar cell reduces its preparation cost and provides a brand-new thinking.
Detailed description of the invention
Fig. 1 is the X ray diffracting spectrum of SnS nano-tube film prepared by the embodiment of the present invention one.
Fig. 2 is the surface SEM figure of SnS nano-tube film prepared by the embodiment of the present invention one.
Fig. 3 is the Raman map of SnS nano-tube film prepared by the embodiment of the present invention one.
Fig. 4 is the X ray diffracting spectrum of SnS nano-rod film prepared by the embodiment of the present invention two.
Fig. 5 is the surface SEM figure of SnS nano-rod film prepared by the embodiment of the present invention two.
Fig. 6 is the Raman map of SnS nano-rod film prepared by the embodiment of the present invention two.
Specific embodiment
Above scheme is described further below in conjunction with specific implementation example, the preferred embodiment of the present invention is described in detail such as
Under:
Embodiment one:
In the present embodiment, referring to FIG. 1 to FIG. 3, a kind of preparation method of SnS nano-tube film includes the following steps:
A. depositing temperature being regulated to 10~18 DEG C first, control humidity is lower than 50%, under the conditions of this temperature and humidity,
The hypo of two hydrated stannous chlorides of 0.025mol, 0.025mol 100ml deionized water has been sequentially added into
Beaker in, stirring is reacted for 1~2 minute, obtains mixed liquor, 0.04mol citric acid is then continuously added into mixed liquor
Trisodium, solution is rendered as yellow turbid solution at this time, continues stirring 2~3 minutes；Sulfuric acid is added into mixed liquor again to adjust mixing
The pH to 0.8 of liquid, clarifies mixed liquor；Then NaOH is added into mixed liquor, adjusts pH of mixed to 1.5, obtains electro-deposition
Precursor solution；
B. control depositing temperature is 10~18 DEG C, and control humidity is not higher than 50%, under the conditions of this temperature and humidity, is carried out
Electro-deposition prepares SnS nano thin-film, specifically:
Using the electrode holder for accompanying clean FTO as working electrode, using platinum filament as to electrode, Ag/AgCl electrode is joined
It than electrode, is deposited 10 minutes in the electro-deposition precursor solution that the pH prepared in the step a is 1.5, control deposition electricity
Pressure is -0.9V, carries out intermittent stirring to electro-deposition precursor solution during the deposition process, controls 300 revs/min of stirring rate
Then post-depositional SnS nano thin-film deionized water is rinsed and is dried by clock, interval time 250s, it is thin that SnS nanotube is made
Film.
Experimental test and analysis:
SnS nano-tube film made from the present embodiment is tested for the property, Fig. 1 is the present embodiment under -0.9V voltage
The XRD energy spectrum analysis of the SnS nano-tube film of deposition.22.01 ° of the angle of diffraction in figure, 26.01 °, 31.53 °, 31.97 °,
39.33 °, 15.49 °, 66.37 ° respectively correspond in the standard PDF card JCPDS No.39-0354 of SnS (110), (120),
(111), (040), (041), (002), (152) diffraction maximum.Fig. 2 is the SnS nanotube that the present embodiment deposits under -0.9V voltage
The surface SEM of film schemes.It can be seen that by exterior view, nano tubular structure is presented in SnS film, and nanotube is long.Fig. 3 is this
The Raman diffraction maximum spectrogram for the SnS nano-tube film that embodiment deposits under -0.9V voltage.In 94cm in figure-1、155cm-1、
181cm-1、216cm-1There is more apparent diffraction maximum at place, corresponds to SnS material.The SnS nanotube of Raman diffraction display preparation
Film object is generated without other miscellaneous phases compared to purer.
Embodiment two:
The present embodiment is basically the same as the first embodiment, and is particular in that:
In the present embodiment, a kind of referring to fig. 4~Fig. 6, preparation method of SnS nano-rod film, includes the following steps:
A. depositing temperature being regulated to 10~18 DEG C first, control humidity is lower than 50%, under the conditions of this temperature and humidity,
The hypo of two hydrated stannous chlorides of 0.025mol, 0.025mol 100ml deionized water has been sequentially added into
Beaker in, stirring is reacted for 1~2 minute, obtains mixed liquor, 0.04mol citric acid is then continuously added into mixed liquor
Trisodium, solution is rendered as yellow turbid solution at this time, continues stirring 2~3 minutes；Sulfuric acid is added into mixed liquor again to adjust mixing
The pH to 0.8 of liquid, clarifies mixed liquor；Then NaOH is added into mixed liquor, adjusts pH of mixed to 1.5, obtains electro-deposition
Precursor solution；
B. control depositing temperature is 10~18 DEG C, and control humidity is not higher than 50%, under the conditions of this temperature and humidity, is carried out
Electro-deposition prepares SnS nano thin-film, specifically:
Using the electrode holder for accompanying clean FTO as working electrode, using platinum filament as to electrode, Ag/AgCl electrode is joined
It than electrode, is deposited 10 minutes in the electro-deposition precursor solution that the pH prepared in the step a is 1.5, control deposition electricity
Pressure is -1.1V, carries out intermittent stirring to electro-deposition precursor solution during the deposition process, controls 300 revs/min of stirring rate
Then post-depositional SnS nano thin-film deionized water is rinsed and is dried by clock, interval time 250s, it is thin that SnS nanometer rods are made
Film.
Experimental test and analysis:
SnS nano-rod film made from the present embodiment is tested for the property, Fig. 4 is the present embodiment under -1.1V voltage
The XRD energy spectrum analysis of the SnS nano-rod film of deposition.22.01 ° of the angle of diffraction in figure, 26.01 °, 31.53 °, 31.97 °,
39.33 °, 15.49 °, 66.37 ° respectively correspond in the standard PDF card JCPDS No.39-0354 of SnS (110), (120),
(111), (040), (041), (002), (152) diffraction maximum.Fig. 5 is the SnS nanometer rods that the present embodiment deposits under -1.1V voltage
The surface SEM of film schemes.It can be seen that by exterior view, nano bar-shape structure, marshalling is presented in SnS film, and nanometer rods are longer.
Fig. 6 is the Raman diffraction maximum spectrogram for the SnS nano-rod film that the present embodiment deposits under -1.1V voltage.In 94cm in figure-1、
155cm-1、181cm-1、216cm-1There is more apparent diffraction maximum at place, corresponds to SnS material.The SnS of Raman diffraction display preparation
Nano-rod film object is generated without other miscellaneous phases compared to purer.
Embodiment three:
The present embodiment is substantially the same as in the previous example, and is particular in that:
In the present embodiment, a kind of preparation method of SnS nano-tube film, includes the following steps:
A. depositing temperature being regulated to 10~18 DEG C first, control humidity is lower than 50%, under the conditions of this temperature and humidity,
In the beaker that the thioacetamide of the stannous sulfate of 0.05mol, 0.05mol is sequentially added to 200ml deionized water, stirring 1
It is reacted within~2 minutes, obtains mixed liquor, 0.06mol potassium citrate is then continuously added into mixed liquor, solution is presented at this time
For yellow turbid solution, continue stirring 2~3 minutes；Hydrochloric acid is added into mixed liquor again to adjust the pH to 0.6 of mixed liquor, makes to mix
Close liquid clarification；Then KOH is added into mixed liquor, adjusts pH of mixed to 1.5, obtains electro-deposition precursor solution；
B. control depositing temperature is 10~18 DEG C, and control humidity is not higher than 50%, under the conditions of this temperature and humidity, is carried out
Electro-deposition prepares SnS nano thin-film, specifically:
Using the electrode holder for accompanying clean FTO as working electrode, using platinum filament as to electrode, Ag/AgCl electrode is joined
It than electrode, is deposited 10 minutes in the electro-deposition precursor solution that the pH prepared in the step a is 1.5, control deposition electricity
Pressure is -0.8V, carries out intermittent stirring to electro-deposition precursor solution during the deposition process, controls 500 revs/min of stirring rate
Then post-depositional SnS nano thin-film deionized water is rinsed and is dried by clock, interval time 250s, it is thin that SnS nanotube is made
Film.
Experimental test and analysis:
SnS nano-tube film made from the present embodiment is tested for the property, nano tubular structure, row is presented in SnS film
Column are neat, and nanotube is longer.SnS nano-tube film object manufactured in the present embodiment is generated without other miscellaneous phases compared to purer.This
Embodiment method SnS nanotube processed in FTO Conducting Glass does not need expensive vacuum equipment, does not need higher yet
The controllable SnS of stoichiometric ratio can be obtained in reaction temperature, and the utilization rate of raw material is very high.
Example IV:
The present embodiment is substantially the same as in the previous example, and is particular in that:
In the present embodiment, a kind of preparation method of SnS nano-rod film, includes the following steps:
A. depositing temperature being regulated to 10~18 DEG C first, control humidity is lower than 50%, under the conditions of this temperature and humidity,
In the beaker that the thiocarbamide of the stannous acetate of 0.05mol, 0.05mol is sequentially added to 200ml ethyl alcohol, stirs 1~2 minute and carry out
Reaction, obtains mixed liquor, 0.02mol citric acid is then continuously added into mixed liquor, and solution is rendered as yellow turbid solution at this time,
Continue stirring 2~3 minutes；Acetic acid is added into mixed liquor again to adjust the pH to 0.6 of mixed liquor, clarifies mixed liquor；Then
Ammonium hydroxide is added into mixed liquor, adjusts pH of mixed to 1.5, obtains electro-deposition precursor solution；
B. control depositing temperature is 10~18 DEG C, and control humidity is not higher than 50%, under the conditions of this temperature and humidity, is carried out
Electro-deposition prepares SnS nano thin-film, specifically:
Using the electrode holder for accompanying clean FTO as working electrode, using platinum filament as to electrode, Ag/AgCl electrode is joined
It than electrode, is deposited 10 minutes in the electro-deposition precursor solution that the pH prepared in the step a is 1.5, control deposition electricity
Pressure is -1.0V, carries out intermittent stirring to electro-deposition precursor solution during the deposition process, controls 500 revs/min of stirring rate
Then post-depositional SnS nano thin-film deionized water is rinsed and is dried by clock, interval time 250s, it is thin that SnS nanometer rods are made
Film.
Experimental test and analysis:
SnS nano-rod film made from the present embodiment is tested for the property, nano bar-shape structure, row is presented in SnS film
Column are neat, and nanometer rods are longer.SnS nano-rod film object manufactured in the present embodiment is generated without other miscellaneous phases compared to purer.This
Embodiment method SnS nanometer rods processed in FTO Conducting Glass do not need expensive vacuum equipment, do not need higher yet
The controllable SnS of stoichiometric ratio can be obtained in reaction temperature, and the utilization rate of raw material is very high.
In conclusion the above embodiment of the present invention SnS nanometer rods/pipe film preparation method, this method requires deposition temperature
Degree is 10~18 degrees Celsius, and humidity is lower than 50%.Soluble stannous salt, thio-compounds are sequentially added into deionized water first
Or in organic solvent, citric acid or citrate are stirred and be added, continues to stir and be added acid-conditioning solution PH, keeps solution clear
Clearly；Then alkali is added and adjusts solution PH to 1.5.Using FTO as working electrode, platinum filament is used as to electrode, and Ag/AgCl electrode is reference
Electrode deposits in the solution of the pH=1.5 prepared, and solution carries out intermittent stirring in deposition process, post-depositional SnS
Nano thin-film deionized water is rinsed and is dried.Wherein under -0.8~-0.9V deposition voltage, SnS nano-tube film can be made,
Under -1.0~-1.1V deposition voltage, SnS nano-rod film can be made.The above embodiment of the present invention preparation method is environmentally protective
It is easy to operate and can strict control operation each step, persursor material used is low in cost, and the film of preparation is conducive to improve
Its photoelectric characteristic.The above embodiment of the present invention adopts electro-deposition method SnS nanometer rods/pipe processed in FTO Conducting Glass, is not required to
Expensive vacuum equipment is wanted, also not needing higher reaction temperature can be obtained the controllable SnS of stoichiometric ratio, the benefit of raw material
Very high with rate, this reduces its preparation cost for research and development large area SnS thin film solar cell and provides a brand-new thinking.
The above embodiment of the present invention SnS nanometer rods/pipe film preparation method is simple, experiment condition can strict control, presoma used
Lower cost for material, is suitble to large-scale production, and preparation process is environmentally protective.
Combination attached drawing of the embodiment of the present invention is illustrated above, but the present invention is not limited to the above embodiments, it can be with
The purpose of innovation and creation according to the present invention makes a variety of variations, under the Spirit Essence and principle of all technical solutions according to the present invention
Change, modification, substitution, combination or the simplification made, should be equivalent substitute mode, as long as meeting goal of the invention of the invention,
Without departing from the technical principle and inventive concept of the preparation method of SnS nano-tube film of the present invention or SnS nano-rod film, all
It belongs to the scope of protection of the present invention.
Claims (9)
1. the preparation method of a kind of SnS nano-tube film or SnS nano-rod film, which comprises the steps of:
A. depositing temperature is regulated to 10~18 DEG C first, control humidity is not higher than 50%, will under the conditions of this temperature and humidity
The soluble stannous salt of 0.025~0.05mol, the thio-compounds of 0.025~0.05mol have sequentially added 100~200ml
In the beaker of deionized water or organic solvent, stirs 1~2 minute, obtain mixed liquor, 0.02 is then continuously added into mixed liquor
~0.06mol citric acid or citrate continue stirring 2~3 minutes；Acid is added into mixed liquor again to adjust mixed liquor
PH to 0.6~0.8, clarifies mixed liquor；Then alkali, adjusting pH of mixed to 1.5, before obtaining electro-deposition are added into mixed liquor
Drive liquid solution；
It b. is reference electrode by Ag/AgCl electrode, in the step a using platinum filament as to electrode using FTO as working electrode
It is deposited 3~10 minutes in the electro-deposition precursor solution prepared, control deposition voltage is -0.8V~-1.1V；In deposition process
In intermittent stirring is carried out to electro-deposition precursor solution, control 300~500 revs/min of stirring rate, then will be post-depositional
SnS nano thin-film deionized water is rinsed and is dried；
In the step b, when controlling under -0.8~-0.9V deposition voltage, SnS nano-tube film is made；Or when control
Under -1.0~-1.1V deposition voltage, SnS nano-rod film is made.
2. the preparation method of SnS nano-tube film or SnS nano-rod film according to claim 1, it is characterised in that: in institute
It states in step a, soluble stannous salt is using the water of any one salt or salt in stannous chloride, stannous sulfate and stannous acetate
Close object.
3. the preparation method of SnS nano-tube film or SnS nano-rod film according to claim 1, it is characterised in that: in institute
It states in step a, thio-compounds uses the hydration of any one salt or salt in sodium thiosulfate, thioacetamide and thiocarbamide
Object.
4. the preparation method of SnS nano-tube film or SnS nano-rod film according to claim 1, it is characterised in that: in institute
It states in step a, when adjusting mixed liquor pH value, the acid of addition uses sulfuric acid, acetic acid or hydrochloric acid.
5. the preparation method of SnS nano-tube film or SnS nano-rod film according to claim 1, it is characterised in that: in institute
It states in step a, when adjusting mixed liquor pH value, the alkali of addition uses NaOH, ammonium hydroxide or KOH.
6. the preparation method of SnS nano-tube film or SnS nano-rod film according to claim 1, it is characterised in that: in institute
It states in step a, the citrate uses trisodium citrate or potassium citrate.
7. the preparation method of SnS nano-tube film or SnS nano-rod film according to claim 1, it is characterised in that: in institute
It states in step a, the organic solvent uses the mixture of any one or the two in alcohol and acetone.
8. the preparation method of SnS nano-tube film or SnS nano-rod film according to claim 1, it is characterised in that: in institute
It states in step b, control depositing temperature is 10~18 DEG C, and control humidity is not higher than 50%, under the conditions of this temperature and humidity, is carried out
Electro-deposition prepares SnS nano thin-film.
9. the preparation method of SnS nano-tube film or SnS nano-rod film according to claim 1, it is characterised in that: in institute
It states in step b, intermittent stirring is carried out to electro-deposition precursor solution during the deposition process, interval time is no more than 250s.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101724834A (en) * | 2009-12-14 | 2010-06-09 | 昆明理工大学 | Continuously self-catalyzed deposition chemical plating solution of tin and using method thereof |
| CN102315333A (en) * | 2011-10-13 | 2012-01-11 | 南京大学 | Preparation of ZnSnS film and ZnSnS/SnS heterojunction, and application of solar cells |
| CN102942214A (en) * | 2012-10-23 | 2013-02-27 | 上海精胜精细化工科技有限公司 | Method for producing stannous sulfide |
| CN105047753A (en) * | 2015-06-24 | 2015-11-11 | 中国科学技术大学 | method for preparing CTS or CTSSe film |
| US9450136B2 (en) * | 2010-08-31 | 2016-09-20 | International Business Machines Corporation | Electrodeposition of thin-film cells containing non-toxic elements |
| CN108034950A (en) * | 2017-12-22 | 2018-05-15 | 中国科学院海洋研究所 | A kind of nano composite membrane for photoproduction cathodic protection and preparation method thereof |
| CN108832094A (en) * | 2018-06-12 | 2018-11-16 | 陕西科技大学 | A kind of one-step method prepares spherical artificial gold/stannous sulfide lithium ion battery negative material method |
| CN108923028A (en) * | 2018-06-29 | 2018-11-30 | 桑顿新能源科技有限公司 | A kind of multi-stage nano Sn sill and preparation method thereof |
| CN109179489A (en) * | 2018-10-26 | 2019-01-11 | 浙江大学 | The preparation method and product of a kind of two-dimensional ultrathin stannous sulfide nanometer sheet and application |
-
2019
- 2019-02-26 CN CN201910142133.5A patent/CN109680314B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101724834A (en) * | 2009-12-14 | 2010-06-09 | 昆明理工大学 | Continuously self-catalyzed deposition chemical plating solution of tin and using method thereof |
| US9450136B2 (en) * | 2010-08-31 | 2016-09-20 | International Business Machines Corporation | Electrodeposition of thin-film cells containing non-toxic elements |
| CN102315333A (en) * | 2011-10-13 | 2012-01-11 | 南京大学 | Preparation of ZnSnS film and ZnSnS/SnS heterojunction, and application of solar cells |
| CN102942214A (en) * | 2012-10-23 | 2013-02-27 | 上海精胜精细化工科技有限公司 | Method for producing stannous sulfide |
| CN105047753A (en) * | 2015-06-24 | 2015-11-11 | 中国科学技术大学 | method for preparing CTS or CTSSe film |
| CN108034950A (en) * | 2017-12-22 | 2018-05-15 | 中国科学院海洋研究所 | A kind of nano composite membrane for photoproduction cathodic protection and preparation method thereof |
| CN108832094A (en) * | 2018-06-12 | 2018-11-16 | 陕西科技大学 | A kind of one-step method prepares spherical artificial gold/stannous sulfide lithium ion battery negative material method |
| CN108923028A (en) * | 2018-06-29 | 2018-11-30 | 桑顿新能源科技有限公司 | A kind of multi-stage nano Sn sill and preparation method thereof |
| CN109179489A (en) * | 2018-10-26 | 2019-01-11 | 浙江大学 | The preparation method and product of a kind of two-dimensional ultrathin stannous sulfide nanometer sheet and application |
Non-Patent Citations (2)
| Title |
|---|
| RAFIAA KIHAL等: "Electrodeposition of SnS Thin film Solar Cells in the Presence", 《J. ELECTROCHEM. SCI. TECHNOL.》 * |
| SHUYING CHENG 等: "Characterization of SnS films prepared by constant-current electro-deposition", 《THIN SOLID FILMS》 * |
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