CN109679292A - A kind of high durable agent of low hygroscopicity LED encapsulation material and preparation method thereof - Google Patents

A kind of high durable agent of low hygroscopicity LED encapsulation material and preparation method thereof Download PDF

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Publication number
CN109679292A
CN109679292A CN201910028937.2A CN201910028937A CN109679292A CN 109679292 A CN109679292 A CN 109679292A CN 201910028937 A CN201910028937 A CN 201910028937A CN 109679292 A CN109679292 A CN 109679292A
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parts
led encapsulation
epoxy resin
encapsulation material
agent
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莫爱军
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2237Oxides; Hydroxides of metals of titanium
    • C08K2003/2241Titanium dioxide
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00Applications
    • C08L2203/20Applications use in electrical or conductive gadgets
    • C08L2203/206Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend

Abstract

The present invention provides a kind of high durable agent of low hygroscopicity LED encapsulation materials and preparation method thereof, it is prepared by the raw material of following parts by weight: 20-40 parts of amino silane modified bisphenol f type epoxy resin, 15-25 parts of polytetrafluoroethylene (PTFE), 10-18 parts of ethylene-vinyl acetate copolymer, 6-13 parts of polypropylene terephthalate, 6-12 parts of polyvinyl alcohol, 4-9 parts of N hydroxymethyl acrylamide, 3-7 parts of tributyl 2-acetylcitrate, 5-10 parts of rutile type titanium white, 2-5 parts of silicon boride, 6-10 parts of graphene oxide, 4-8 parts of propionic acid n-octadecyl alcohol ester, 8-14 parts of vinyltrimethoxysilane, 7-15 parts of polymethyl hydrogen siloxane, 3-6 parts of bleeding agent, 5-9 parts of triglycidyl isocyanurate.LED encapsulation material produced by the present invention has good thermal conductivity, lower hygroscopicity and good mechanical strength, is with a wide range of applications as LED encapsulation material.

Description

A kind of high durable agent of low hygroscopicity LED encapsulation material and preparation method thereof
Technical field
The invention belongs to encapsulating material technical fields, and in particular to a kind of high durable agent of low hygroscopicity LED encapsulation material and its Preparation method.
Background technique
LED is made of chip, metal wire, bracket, conducting resinl, encapsulating material etc., and encapsulating material therein primarily serves Sealing and protection chip work normally, and avoid it by the influence of humidity in ambient enviroment and temperature;Fixed and support conducting wire, prevents Only electronic building brick is generated variation that is damaged and causing component parameter by mechanical oscillation, impact;It reduces between LED chip and air The gap of refractive index is to increase light output and effectively by hot the effects of being discharged of inside generation.Therefore, for encapsulating material, It will have excellent leakproofness, translucency, caking property, dielectric properties and mechanical performance.
Encapsulating material used at present includes epoxy resin, polycarbonate, polymethyl methacrylate, glass, organic The high transparency material such as silicon, however, with the brightness of LED and the continuous improvement of power and the development of white light LEDs, to LED's Encapsulating material is also put forward higher requirements, such as more high refractive index, high transparency, high-termal conductivity, resistance to ultraviolet and heat ageing energy Power and low thermal expansion coefficient, ion concentration and stress etc..And hygroscopicity, easy to aging, poor heat resistance, height existing for epoxy itself The defects of mild short wavelength light is easy to change under shining, cured internal stress is big, largely effects on and shortens the service life of LED component.Cause This, it is necessary to it is further improved on the basis of existing LED encapsulation material, to improve the comprehensive performance of LED encapsulation material.
Summary of the invention
For the above problem of the existing technology, the purpose of the present invention is to provide a kind of high durable agent of low hygroscopicity LED Encapsulating material and preparation method thereof.
To achieve the goals above, the present invention the following technical schemes are provided:
A kind of high durable agent of low hygroscopicity LED encapsulation material, is prepared: amino silane modified by the raw material of following parts by weight 20-40 parts of bisphenol f type epoxy resin, 15-25 parts of polytetrafluoroethylene (PTFE), 10-18 parts of ethylene-vinyl acetate copolymer, poly- to benzene 6-13 parts of naphthalate, 6-12 parts of polyvinyl alcohol, 4-9 parts of N hydroxymethyl acrylamide, tributyl 2-acetylcitrate 3-7 Part, 5-10 parts of rutile type titanium white, 2-5 parts of silicon boride, 6-10 parts of graphene oxide, 4-8 parts of propionic acid n-octadecyl alcohol ester, second 8-14 parts of alkenyl trimethoxy silane, 7-15 parts of polymethyl hydrogen siloxane, 3-6 parts of bleeding agent, triglycidyl isocyanurate 5-9 parts.
Further, it is (1-3): 1 aerosol-OT salt and isooctanol that the bleeding agent, which is mass ratio, Polyoxyethylene ether.Preferably, a kind of high durable agent of low hygroscopicity LED encapsulation material of the present invention, by the original of following parts by weight Material is prepared: 30 parts modified of bisphenol A type epoxy resin of amino silicones, 20 parts of polytetrafluoroethylene (PTFE), ethene-vinyl acetate 4 parts of copolymer 1,10 parts of polypropylene terephthalate, 9 parts of polyvinyl alcohol, 7 parts of N hydroxymethyl acrylamide, acetyl lemon 5 parts of sour tributyl, 7.5 parts of rutile type titanium white, 3.5 parts of silicon boride, 8 parts of graphene oxide, propionic acid n-octadecyl alcohol ester 6 Part, 11 parts of vinyltrimethoxysilane, 11 parts of polymethyl hydrogen siloxane, 4.5 parts of bleeding agent, triglycidyl isocyanurate 7 parts.
Further, amino silane modified bisphenol f type epoxy resin of the present invention the preparation method is as follows: by bis-phenol F type epoxy resin and N- (β-aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane are mixed with the weight ratio of 10:1, 90-100 DEG C is raised the temperature in the state of stirring, and 4,4'- diaminodiphenylmethane is then added and continues to be stirred to react Reaction system is cooled to room temperature up to amino silane modified bisphenol f type epoxy resin by 40min.
The preparation method of LED encapsulation material of the present invention, comprising the following steps:
(1) weigh each raw material by corresponding parts by weight, by amino silane modified bisphenol f type epoxy resin, polytetrafluoroethylene (PTFE), Ethylene-vinyl acetate copolymer and polypropylene terephthalate are placed in reaction kettle, under the revolving speed of 300-500r/min It stirs and is to slowly warm up to 90-100 DEG C, after keeping this temperature mixing 10-20min, reaction temperature is down to 50-70 DEG C, it will be golden Red stone-type titanium dioxide, silicon boride, graphene oxide are pre-mixed uniformly, are added into reaction kettle while stirring, after Continue after being stirred 30-50min, mixture A is made;
(2) it will be mixed except each raw material of remaining of N hydroxymethyl acrylamide and triglycidyl isocyanurate, in 200- It is stirred 15-30min under the revolving speed of 400r/min, mixture B is made;
(3) mixture A and mixture B are mixed, N hydroxymethyl acrylamide is then added and isocyanuric acid three contracts Water glyceride, raises the temperature to 70-90 DEG C while stirring, continues to be de-gassed after being stirred to react 1-2h, takes off The gas disposal time is 40-60min;
(4) mixture after degassing process is poured into mold, up to LED encapsulation material after solidification.
The utility model has the advantages that the present invention provides a kind of high durable agent of low hygroscopicity LED encapsulation material and preparation method thereof, the present invention One kind using amino silane modified bisphenol f type epoxy resin as matrix resin, the modulus drop of the epoxy resin after modification Low, silane group has lower surface tension and flexibility, solution can be promoted to penetrate into inside material epidermis through stomata, pole The earth increases the permeability of polymeric system, so that flexibility is greatly improved, while improving the superficiality of resin Energy;Amino silane modified bisphenol f type epoxy resin and polytetrafluoroethylene (PTFE), ethylene-vinyl acetate copolymer, poly terephthalic acid Propylene glycol ester interworking plays an important role the performances such as resistant of high or low temperature, water resistance, the high tenacity for improving material.Rutile Type titanium dioxide, silicon boride, graphene oxide can be improved the heat-conductive characteristic of material, and thermal shock resistance properties at high temperature is good It is good, improve the weatherability of material.Polyvinyl alcohol provides the good film forming of material system;N hydroxymethyl acrylamide promotes raw material Between cementation;Tributyl 2-acetylcitrate plays an important role the hardness for improving material;The positive octadecanol of propionic acid Ester can be improved the photo and thermal stability of material;The addition of triglycidyl isocyanurate promotes the work of the crosslinking between raw material With;The addition of vinyltrimethoxysilane, polymethyl hydrogen siloxane greatly improves the agent of low hygroscopicity energy of material.
It is obtained from test result, LED encapsulation material produced by the present invention has good thermal conductivity, lower moisture pick-up properties With good mechanical strength, therefore encapsulating material produced by the present invention have stronger weatherability and agent of low hygroscopicity energy, conduct LED encapsulation material is with a wide range of applications.
Specific embodiment
The invention will now be further described with reference to specific embodiments, but examples are merely exemplary, not to this hair Bright range constitutes any restrictions.It will be understood by those skilled in the art that without departing from the spirit and scope of the invention Can with the details and forms of the technical scheme of the invention are modified or replaced, but these modification and replacement each fall within it is of the invention In protection scope.
The preparation method of amino silane modified bisphenol f type epoxy resin described in following embodiment and comparative example is such as Under: by bisphenol f type epoxy resin and N- (β-aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane with the weight ratio of 10:1 into Row mixing, raises the temperature to 90-100 DEG C while stirring, 4,4'- diaminodiphenylmethane is then added and continues to stir 40min is reacted, reaction system is cooled to room temperature up to amino silane modified bisphenol f type epoxy resin.
Embodiment 1
A kind of high durable agent of low hygroscopicity LED encapsulation material, is prepared by the raw material of following parts by weight: by following parts by weight Raw material be prepared: 30 parts modified of bisphenol A type epoxy resin of amino silicones, 20 parts of polytetrafluoroethylene (PTFE), ethyl vinyl acetate 14 parts of ethylene copolymer, 10 parts of polypropylene terephthalate, 9 parts of polyvinyl alcohol, 7 parts of N hydroxymethyl acrylamide, acetyl 5 parts of tributyl citrate, 7.5 parts of rutile type titanium white, 3.5 parts of silicon boride, 8 parts of graphene oxide, the positive octadecanol of propionic acid 6 parts of ester, 11 parts of vinyltrimethoxysilane, 11 parts of polymethyl hydrogen siloxane, 4.5 parts of bleeding agent, isocyanuric acid three shrink sweet 7 parts of grease.The bleeding agent is the aerosol-OT salt and isooctanol polyethoxylate that mass ratio is 2:1.
The preparation method of LED encapsulation material of the present invention, comprising the following steps:
(1) weigh each raw material by corresponding parts by weight, by amino silane modified bisphenol f type epoxy resin, polytetrafluoroethylene (PTFE), Ethylene-vinyl acetate copolymer and polypropylene terephthalate are placed in reaction kettle, are stirred under the revolving speed of 400r/min And 95 DEG C are to slowly warm up to, after keeping this temperature mixing 15min, reaction temperature is down to 60 DEG C, by rutile type titanium white, boron SiClx, graphene oxide are pre-mixed uniformly, are added into reaction kettle while stirring, continue to be stirred 40min Afterwards, mixture A is made;
(2) it will be mixed except each raw material of remaining of N hydroxymethyl acrylamide and triglycidyl isocyanurate, in 300r/ It is stirred 23min under the revolving speed of min, mixture B is made;
(3) mixture A and mixture B are mixed, N hydroxymethyl acrylamide is then added and isocyanuric acid three contracts Water glyceride raises the temperature to 80 DEG C while stirring, continues to be de-gassed after being stirred to react 1.5h, at degassing The reason time is 50min;
(4) mixture after degassing process is poured into mold, up to LED encapsulation material after solidification.
Embodiment 2
A kind of high durable agent of low hygroscopicity LED encapsulation material, is prepared: amino silane modified by the raw material of following parts by weight 20 parts of bisphenol f type epoxy resin, 15 parts of polytetrafluoroethylene (PTFE), 10 parts of ethylene-vinyl acetate copolymer, poly terephthalic acid the third two 6 parts of alcohol ester, 6 parts of polyvinyl alcohol, 4 parts of N hydroxymethyl acrylamide, 3 parts of tributyl 2-acetylcitrate, rutile type titanium white 5 Part, 2 parts of silicon boride, 6 parts of graphene oxide, 4 parts of propionic acid n-octadecyl alcohol ester, 8 parts of vinyltrimethoxysilane, poly- methyl hydrogen 7 parts of siloxanes, 3 parts of bleeding agent, 5 parts of triglycidyl isocyanurate.
The bleeding agent is the aerosol-OT salt and isooctanol polyethoxylate that mass ratio is 1:1.
The preparation method of LED encapsulation material of the present invention, comprising the following steps:
(1) weigh each raw material by corresponding parts by weight, by amino silane modified bisphenol f type epoxy resin, polytetrafluoroethylene (PTFE), Ethylene-vinyl acetate copolymer and polypropylene terephthalate are placed in reaction kettle, are stirred under the revolving speed of 300r/min And 90 DEG C are to slowly warm up to, after keeping this temperature mixing 10min, reaction temperature is down to 50 DEG C, by rutile type titanium white, boron SiClx, graphene oxide are pre-mixed uniformly, are added into reaction kettle while stirring, continue to be stirred 30min Afterwards, mixture A is made;
(2) it will be mixed except each raw material of remaining of N hydroxymethyl acrylamide and triglycidyl isocyanurate, in 200r/ It is stirred 15min under the revolving speed of min, mixture B is made;
(3) mixture A and mixture B are mixed, N hydroxymethyl acrylamide is then added and isocyanuric acid three contracts Water glyceride raises the temperature to 70 DEG C while stirring, continues to be de-gassed after being stirred to react 1h, degassing process Time is 40min;
(4) mixture after degassing process is poured into mold, up to LED encapsulation material after solidification.
Embodiment 3
A kind of high durable agent of low hygroscopicity LED encapsulation material, is prepared: amino silane modified by the raw material of following parts by weight 25 parts of bisphenol f type epoxy resin, 18 parts of polytetrafluoroethylene (PTFE), 12 parts of ethylene-vinyl acetate copolymer, poly terephthalic acid the third two 8 parts of alcohol ester, 8 parts of polyvinyl alcohol, 6 parts of N hydroxymethyl acrylamide, 4 parts of tributyl 2-acetylcitrate, rutile type titanium white 7 Part, 3 parts of silicon boride, 7 parts of graphene oxide, 5 parts of propionic acid n-octadecyl alcohol ester, 10 parts of vinyltrimethoxysilane, poly- methyl 9 parts of hydrogen siloxane, 4 parts of bleeding agent, 6 parts of triglycidyl isocyanurate.
The bleeding agent is the aerosol-OT salt and isooctanol polyethoxylate that mass ratio is 1.5:1.
The preparation method of LED encapsulation material of the present invention, comprising the following steps:
(1) weigh each raw material by corresponding parts by weight, by amino silane modified bisphenol f type epoxy resin, polytetrafluoroethylene (PTFE), Ethylene-vinyl acetate copolymer and polypropylene terephthalate are placed in reaction kettle, are stirred under the revolving speed of 350r/min And 92 DEG C are to slowly warm up to, after keeping this temperature mixing 13min, reaction temperature is down to 55 DEG C, by rutile type titanium white, boron SiClx, graphene oxide are pre-mixed uniformly, are added into reaction kettle while stirring, continue to be stirred 35min Afterwards, mixture A is made;
(2) it will be mixed except each raw material of remaining of N hydroxymethyl acrylamide and triglycidyl isocyanurate, in 250r/ It is stirred 20min under the revolving speed of min, mixture B is made;
(3) mixture A and mixture B are mixed, N hydroxymethyl acrylamide is then added and isocyanuric acid three contracts Water glyceride raises the temperature to 75 DEG C while stirring, continues to be de-gassed after being stirred to react 1.2h, at degassing The reason time is 45min;
(4) mixture after degassing process is poured into mold, up to LED encapsulation material after solidification.
Embodiment 4
A kind of high durable agent of low hygroscopicity LED encapsulation material, is prepared: amino silane modified by the raw material of following parts by weight 40 parts of bisphenol f type epoxy resin, 25 parts of polytetrafluoroethylene (PTFE), 18 parts of ethylene-vinyl acetate copolymer, poly terephthalic acid the third two 13 parts of alcohol ester, 12 parts of polyvinyl alcohol, 9 parts of N hydroxymethyl acrylamide, 7 parts of tributyl 2-acetylcitrate, rutile type titanium white 10 parts, 5 parts of silicon boride, 10 parts of graphene oxide, 8 parts of propionic acid n-octadecyl alcohol ester, 14 parts of vinyltrimethoxysilane, poly- first 15 parts of base hydrogen siloxane, 6 parts of bleeding agent, 9 parts of triglycidyl isocyanurate.
The bleeding agent is the aerosol-OT salt and isooctanol polyethoxylate that mass ratio is 3:1.
The preparation method of LED encapsulation material of the present invention, comprising the following steps:
(1) weigh each raw material by corresponding parts by weight, by amino silane modified bisphenol f type epoxy resin, polytetrafluoroethylene (PTFE), Ethylene-vinyl acetate copolymer and polypropylene terephthalate are placed in reaction kettle, are stirred under the revolving speed of 500r/min And be to slowly warm up to 100 DEG C, after keeping this temperature mixing 20min, reaction temperature is down to 70 DEG C, by rutile type titanium white, Silicon boride, graphene oxide are pre-mixed uniformly, are added into reaction kettle while stirring, continue to be stirred After 50min, mixture A is made;
(2) it will be mixed except each raw material of remaining of N hydroxymethyl acrylamide and triglycidyl isocyanurate, in 400r/ It is stirred 30min under the revolving speed of min, mixture B is made;
(3) mixture A and mixture B are mixed, N hydroxymethyl acrylamide is then added and isocyanuric acid three contracts Water glyceride raises the temperature to 90 DEG C while stirring, continues to be de-gassed after being stirred to react 2h, degassing process Time is 60min;
(4) mixture after degassing process is poured into mold, up to LED encapsulation material after solidification.
Comparative example 1
Comparative example 1 the difference from embodiment 1 is that, amino silane modified bisphenol f type epoxy resin is replaced in comparative example 1 Change bisphenol f type epoxy resin into.
Comparative example 2
Comparative example 2 the difference from embodiment 1 is that, rutile type titanium white and poly- methyl hydrogen silicon are not added in comparative example 2 Oxygen alkane.
LED encapsulation material made from embodiment 1-4 and comparative example 1-2 is subjected to following performance test, test result is such as Shown in table 1, obtained from table 1, LED encapsulation material produced by the present invention have good thermal conductivity, lower moisture pick-up properties and Good mechanical strength, therefore encapsulating material produced by the present invention has stronger weatherability and agent of low hygroscopicity energy, is used as LED Encapsulating material is with a wide range of applications.
Table 1

Claims (5)

1. a kind of high durable agent of low hygroscopicity LED encapsulation material, which is characterized in that be prepared by the raw material of following parts by weight: ammonia 20-40 parts modified of bisphenol f type epoxy resin of base silane, 15-25 parts of polytetrafluoroethylene (PTFE), ethylene-vinyl acetate copolymer 10-18 Part, 6-13 parts of polypropylene terephthalate, 6-12 parts of polyvinyl alcohol, 4-9 parts of N hydroxymethyl acrylamide, acetyl tributyl citrate 3-7 parts of tributyl, 5-10 parts of rutile type titanium white, 2-5 parts of silicon boride, 6-10 parts of graphene oxide, the positive octadecanol of propionic acid 4-8 parts of ester, 8-14 parts of vinyltrimethoxysilane, 7-15 parts of polymethyl hydrogen siloxane, 3-6 parts of bleeding agent, isocyanuric acid three 5-9 parts of ethylene oxidic ester.
2. a kind of high durable agent of low hygroscopicity LED encapsulation material according to claim 1, which is characterized in that the infiltration Agent is that mass ratio is (1-3): 1 aerosol-OT salt and isooctanol polyethoxylate.
3. a kind of high durable agent of low hygroscopicity LED encapsulation material according to claim 1, which is characterized in that by following weight The raw material of part is prepared: 30 parts modified of bisphenol A type epoxy resin of amino silicones, 20 parts of polytetrafluoroethylene (PTFE), ethylene-vinegar 14 parts of sour ethylene copolymer, 10 parts of polypropylene terephthalate, 9 parts of polyvinyl alcohol, 7 parts of N hydroxymethyl acrylamide, second 5 parts of acyl tributyl citrate, 7.5 parts of rutile type titanium white, 3.5 parts of silicon boride, 8 parts of graphene oxide, positive 18 carbon of propionic acid 6 parts of alcohol ester, 11 parts of vinyltrimethoxysilane, 11 parts of polymethyl hydrogen siloxane, 4.5 parts of bleeding agent, isocyanuric acid three shrink 7 parts of glyceride.
4. a kind of high durable agent of low hygroscopicity LED encapsulation material according to claim 1, which is characterized in that the amino silicone The modified bisphenol f type epoxy resin of alkane the preparation method is as follows: by bisphenol f type epoxy resin and N- (β-aminoethyl)-γ-ammonia third Ylmethyl dimethoxysilane is mixed with the weight ratio of 10:1, raises the temperature to 90-100 DEG C while stirring, Then 4,4'- diaminodiphenylmethane is added to continue to be stirred to react 40min, reaction system is cooled to room temperature up to amino silane Modified bisphenol f type epoxy resin.
5. the preparation method of the described in any item LED encapsulation materials of claim 1-4, which comprises the following steps:
(1) each raw material is weighed by corresponding parts by weight, by amino silane modified bisphenol f type epoxy resin, polytetrafluoroethylene (PTFE), second Alkene-acetate ethylene copolymer and polypropylene terephthalate are placed in reaction kettle, are stirred under the revolving speed of 300-500r/min It mixes and is to slowly warm up to 90-100 DEG C, after keeping this temperature mixing 10-20min, reaction temperature is down to 50-70 DEG C, by golden red Stone-type titanium dioxide, silicon boride, graphene oxide are pre-mixed uniformly, are added into reaction kettle while stirring, are continued After being stirred 30-50min, mixture A is made;
(2) it will be mixed except each raw material of remaining of N hydroxymethyl acrylamide and triglycidyl isocyanurate, in 200-400r/ It is stirred 15-30min under the revolving speed of min, mixture B is made;
(3) mixture A and mixture B are mixed, then addition N hydroxymethyl acrylamide and isocyanuric acid three shrink sweet Grease raises the temperature to 70-90 DEG C while stirring, continues to be de-gassed after being stirred to react 1-2h, at degassing The reason time is 40-60min;
(4) mixture after degassing process is poured into mold, up to LED encapsulation material after solidification.
CN201910028937.2A 2019-01-12 2019-01-12 A kind of high durable agent of low hygroscopicity LED encapsulation material and preparation method thereof Pending CN109679292A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113529201A (en) * 2021-06-29 2021-10-22 吉祥三宝高科纺织有限公司 Composite fabric combining moisture absorption, heat release and phase change temperature adjustment and preparation method thereof

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US20070027254A1 (en) * 2003-05-19 2007-02-01 Yuichi Kawata Resin composition for thermally conductive material and thermally conductive material
CN102174306A (en) * 2011-01-26 2011-09-07 烟台德邦电子材料有限公司 Conductive adhesive for LED (light emitting diode) packaging and preparation method of conductive adhesive
CN104086913A (en) * 2014-08-04 2014-10-08 公安部四川消防研究所 Flame-retardant EPS (expandable polystyrene) foam thermal-insulation board and preparation method thereof
CN105907360A (en) * 2016-06-29 2016-08-31 杭州之江有机硅化工有限公司 Silicon rubber sealant and preparation method thereof
CN107980052A (en) * 2017-06-01 2018-05-01 苏州佳亿达电器有限公司 LED encapsulation material with high temperature resistant and ageing-resistant performance

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070027254A1 (en) * 2003-05-19 2007-02-01 Yuichi Kawata Resin composition for thermally conductive material and thermally conductive material
CN102174306A (en) * 2011-01-26 2011-09-07 烟台德邦电子材料有限公司 Conductive adhesive for LED (light emitting diode) packaging and preparation method of conductive adhesive
CN104086913A (en) * 2014-08-04 2014-10-08 公安部四川消防研究所 Flame-retardant EPS (expandable polystyrene) foam thermal-insulation board and preparation method thereof
CN105907360A (en) * 2016-06-29 2016-08-31 杭州之江有机硅化工有限公司 Silicon rubber sealant and preparation method thereof
CN107980052A (en) * 2017-06-01 2018-05-01 苏州佳亿达电器有限公司 LED encapsulation material with high temperature resistant and ageing-resistant performance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113529201A (en) * 2021-06-29 2021-10-22 吉祥三宝高科纺织有限公司 Composite fabric combining moisture absorption, heat release and phase change temperature adjustment and preparation method thereof

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